CN110198028A - Electrostatic discharge protection circuit - Google Patents
Electrostatic discharge protection circuit Download PDFInfo
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- CN110198028A CN110198028A CN201910391825.3A CN201910391825A CN110198028A CN 110198028 A CN110198028 A CN 110198028A CN 201910391825 A CN201910391825 A CN 201910391825A CN 110198028 A CN110198028 A CN 110198028A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
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Abstract
The present invention provides a kind of electrostatic discharge protection circuits; including first diode, the second diode and protective switch; the first diode connects low voltage unit; second diode connects high voltage unit, and electrostatic generates unit and connect by the protective switch with the first diode and second diode；When the electrostatic generates the voltage of unit in predetermined voltage range, the protective switch is in an off state, and the electrostatic is generated unit and is isolated with the low voltage unit and the high voltage unit, to prevent from leaking electricity；When the voltage that the electrostatic generates unit exceeds predeterminated voltage, the protective switch is in the conductive state, and the electrostatic that the electrostatic generates unit disperses to the low voltage unit or the high voltage unit, to eliminate electrostatic.
Description
Technical field
The present invention relates to electronic technology field more particularly to a kind of electrostatic discharge protection circuits.
Background technique
Static discharge (Electro-static with the development of integrated circuit and semiconductor display industry, in circuit
Discharge, ESD) caused by destroy increasing, how to carry out effective electrostatic protection and have become major production firm to examine
The major issue of worry.
Currently, the method for solving the electrostatic problem in integrated circuit mainly passes through electrostatic discharge protection circuit and exports electrostatic,
It common are following two circuit form:
One is: electrostatic discharge protection circuit as shown in Figure 1, including first diode 11 and the second diode 12, described
The input terminal of one diode 11 connects low-voltage power supply unit 14, and the output end of second diode 12 connects high voltage supply unit
15, the output end of the first diode 11 is connect with 12 input terminal of the second diode, needs to carry out the quiet of electrostatic protection
Electricity generates unit 16 and is connected to the node P between the first diode 11 and second diode 12；The electrostatic generates
The normal working voltage of unit 16 is provided in the voltage that the low-voltage power supply unit 14 provides with the high voltage supply unit 15
Between voltage；When the voltage that the electrostatic generates unit 16 is normal working voltage, in the first diode 11 and described
Under the one-way conduction effect of second diode 12, the electrostatic generates unit 16 and the low-voltage power supply unit 14 and the high pressure
Electric charge transfer is not present between power supply unit 15；It is higher than its voltage or low when the electrostatic generates unit 16
It is described quiet under the effect of the one-way conduction of the first diode 11 and second diode 12 when normal working voltage
Electricity generates the electrostatic charge that unit 16 accumulates and shifts to the high voltage supply unit 15 or the low-voltage power supply unit 14.This electrostatic
Protection circuit has good anti-static effect, but the operating voltage that the electrostatic generates unit 16 is strictly limited described
Between the voltage that low-voltage power supply unit 14 and the high voltage supply unit 15 provide, when the electrostatic generates the work electricity of unit 15
Voltage of the normal fluctuation of pressure lower than the low-voltage power supply unit 14 offer or the electricity higher than the high voltage supply unit 15 offer
When pressure, the operating voltage that the electrostatic generates unit 15 can be let out to the low-voltage power supply unit 14 or the high voltage supply unit 15
Leakage, i.e. leaky.
Another kind is: electrostatic discharge protection circuit as shown in Figure 2, is made of two capacitors and a triode, and electrostatic generates
The electrostatic that unit 26 generates is dispersed by transistor T to static elimination end 25, and the grid of the transistor T passes through the first electricity respectively
Hold C1 and the second capacitor C2 to connect with electrostatic generation unit 26 and static elimination end 25；When the electrostatic generates the voltage of unit 26
It when more than preset value, can charge to the first capacitor C1 or the second capacitor C2, the grid of the transistor T is made to reach threshold value electricity
Pressure, the transistor T conducting disperse the electrostatic charge that electrostatic generation unit 26 generates to static elimination end 25.It is this quiet
Electric protection circuit can be because there are two capacitors for tool in circuit, and the space for occupying entire circuit is larger, is unfavorable for integrated circuit
Small size design.
In conclusion two kinds of electrostatic discharge protection circuits in the prior art are respectively present electric leakage and the big problem that takes up space.
Therefore, it is necessary to a kind of novel electrostatic discharge protection circuits can overcome disadvantages described above.
Summary of the invention
Based on the defect of the above-mentioned prior art, the present invention provides a kind of electrostatic discharge protection circuits, have good electrostatic anti-
Effect is protected, and it is big to efficiently solve the problems, such as to leak electricity and take up space, and is suitably applied in integrated circuit.
The present invention provides a kind of electrostatic discharge protection circuits, comprising:
First diode has the function of that one-way conduction, the input terminal of the first diode connect low voltage unit；
Second diode has the function of that one-way conduction, the input terminal of second diode connect the first diode
Output end, the output end of second diode connects high voltage unit；And
Protective switch, has conducting and break function, and one end connection electrostatic of the protective switch generates unit, the guarantor
The other end of shield switch connects the node between the first diode and second diode；Wherein,
The electrostatic that the electrostatic generates unit is released by the protective switch to the low voltage unit or the high voltage unit
It puts.
An embodiment according to the present invention, the normal working voltage that the electrostatic generates unit is predeterminated voltage, described default
Voltage is between the voltage that the voltage that the low voltage unit provides and the high voltage unit provide.
An embodiment according to the present invention, the normal working voltage that the electrostatic generates unit is predeterminated voltage, described default
The minimum amount of voltage that of voltage is less than the voltage value that the low voltage unit provides, and the maximum voltage value of the predeterminated voltage is greater than described
The voltage value that high voltage unit provides.
An embodiment according to the present invention, which is characterized in that
When the voltage that the electrostatic generates unit is lower than the predeterminated voltage, the low voltage unit and the electrostatic are generated
Access is formed between unit；
When the voltage that the electrostatic generates unit is higher than the predeterminated voltage, the electrostatic generates unit and the high pressure
Access is formed between unit.
An embodiment according to the present invention, the protective switch control the electrostatic by the voltage that the electrostatic generates unit
Generate the conducting and disconnection between unit and the node.
An embodiment according to the present invention, the protective switch include transistor, first resistor and second resistance；
The first resistor is connected between the drain electrode of grid and the transistor of the transistor by the first conducting wire；
The second resistance is connected between the grid of the transistor and the source electrode of the transistor by the second conducting wire；
The source electrode of the transistor is connect with the first node；
The drain electrode of the transistor generates unit with the electrostatic and connect；
When the voltage that the electrostatic generates unit is higher or lower than the predeterminated voltage, the grid control of the transistor
The source electrode of the transistor is connected with the drain electrode of the transistor, and the electrostatic generates electrostatic that unit generates to the high pressure list
The first or described low voltage unit release.
An embodiment according to the present invention, the grid voltage of the transistor control the source electrode and the crystal of the transistor
The drain electrode of pipe is turned on or off.
An embodiment according to the present invention, the electrostatic discharge protection circuit are applied in integrated circuit.
The beneficial effects of the present invention are: electrostatic discharge protection circuit provided by the invention, has first diode, the second diode
And protective switch, the protective switch control electrostatic generate the connection of unit and the first diode or second diode
Or it disconnects；When the electrostatic generates the voltage of unit in predetermined voltage range, the protective switch is in an off state, and is prevented
Electric leakage；When the voltage that the electrostatic generates unit exceeds predetermined voltage range, the protective switch is in the conductive state, by electrostatic
Release；Meanwhile electrostatic discharge protection circuit provided by the invention have the advantages that take up space it is small.
Detailed description of the invention
It, below will be to embodiment or the prior art in order to illustrate more clearly of embodiment or technical solution in the prior art
Attached drawing needed in description is briefly described, it should be apparent that, the accompanying drawings in the following description is only some of invention
Embodiment for those of ordinary skill in the art without creative efforts, can also be attached according to these
Figure obtains other attached drawings.
Fig. 1 is a kind of electrostatic discharge protection circuit figure of prior art；
Fig. 2 is the electrostatic discharge protection circuit figure of another prior art；
Fig. 3 is the electrostatic discharge protection circuit schematic diagram that one embodiment of the invention provides.
Specific embodiment
The explanation of following embodiment is referred to the additional illustration, the particular implementation that can be used to implement to illustrate the present invention
Example.The direction term that the present invention is previously mentioned, such as [on], [under], [preceding], [rear], [left side], [right side], [interior], [outer], [side]
Deng being only the direction with reference to annexed drawings.Therefore, the direction term used be to illustrate and understand the present invention, rather than to
The limitation present invention.The similar unit of structure is with being given the same reference numerals in the figure.
The embodiment of the invention provides a kind of electrostatic discharge protection circuits, including first diode, the second diode and protection to open
It closes；When it is normal working voltage that electrostatic, which generates unit, the protective switch is in an off state, so that the electrostatic be made to generate
Unit and the first diode and second diode-isolated, to prevent from leaking electricity；When the electrostatic generates the voltage of unit
When beyond normal working voltage, the electrostatic is generated unit and the first diode or the described 2nd 2 by the protective switch
Pole pipe connection, the electrostatic generate the electrostatic that unit generates and are discharged by the first diode or second diode, reached
To the purpose for eliminating electrostatic.
Electrostatic discharge protection circuit provided in an embodiment of the present invention is illustrated with reference to the accompanying drawing:
As shown in figure 3, being electrostatic discharge protection circuit schematic diagram provided in an embodiment of the present invention, the electrostatic discharge protection circuit includes
First diode 31, the second diode 32 and protective switch 33；Wherein,
The output end of the first diode 31 is connect with the input terminal of second diode 32, the first diode
31 input terminal connects low voltage unit 34, and the output end of second diode 32 connects high voltage unit 35；One or two pole
Pipe 31 and second diode 32 have one-way conduction characteristic, i.e. electric current can only flow to described first from the low voltage unit 34
Diode 31 flows to the high voltage unit 35 from second diode 32, on the contrary then be not turned on；
The protective switch 33 one end connection electrostatic generate unit 36, the protective switch 33 the other end connection described in
Node P between first diode 31 and second diode 32；
It should be noted that the electrostatic, which generates unit 36, can be the circuit for needing to carry out electrostatic protection, electricity is such as driven
Road or sensor circuit etc.；The electrostatic generates unit 36 can generate the accumulation of electrostatic charge in course of normal operation, work as electrostatic charge
When accumulating to a certain extent, the operating voltage that the electrostatic generates unit 36 will affect, for example, the electrostatic generates unit 36
Normal working voltage is -5V~+5V, and when the electrostatic, which generates unit 36, accumulates a certain amount of positive charge, the electrostatic is generated
The voltage of unit 36 will be greater than+5V, exceeds normal working voltage, causes circuit abnormality；Similarly, when the electrostatic charge generates end 36
When accumulating a certain amount of negative electrical charge, the voltage that the electrostatic generates unit 36 will be less than -5V, will also result in circuit abnormality.
There is static charge accumulation when the electrostatic generates unit 36, that is, when generating electrostatic, it is logical that the electrostatic generates unit 36
The protective switch 33 is crossed to 35 release electrostatic lotus of the low voltage unit 34 or the high voltage unit, the electrostatic is made to generate unit
36 voltage restores normal working voltage.
It should be noted that the protective switch 33 is disconnected when it is normal working voltage that the electrostatic, which generates unit 36,
Open state, the electrostatic generate and do not form access between unit 36 and the first diode 31 or second diode 32,
It is leaked with the running current for preventing the electrostatic from generating unit 36 to the low voltage unit 34 or the high voltage unit 35, i.e.,
It leaks electricity；When the voltage that the electrostatic generates unit 36 exceeds normal working voltage, the protective switch 33 is conducting shape
State, the electrostatic generate unit 36 and discharge electricity to the low voltage unit 34 or the high voltage unit 35 by the protective switch 33
Lotus, to eliminate electrostatic.
The predetermined voltage range of electrostatic discharge protection circuit provided in an embodiment of the present invention is primarily present two kinds of situations, below with two
Both of these case is introduced in the mode of kind embodiment:
First embodiment:
The normal working voltage that the electrostatic generates unit 36 is predeterminated voltage, and the predeterminated voltage is between the low pressure list
Between the voltage that the voltage and the high voltage unit 35 that member 34 provides provide, for example, when the voltage of the low voltage unit 34 offer
For -5V, when the voltage that the high voltage unit 35 provides is+5V, the predeterminated voltage be between -5V to+5V (including -5V with+
Voltage value 5V)；
It is described when the electrostatic generates unit 36 because accumulating negative electrical charge, and causes its voltage lower than the predeterminated voltage
Low voltage unit 34 and the electrostatic generate and form access between unit 36, and electric current is by the low voltage unit 34, by described first
Diode 31 and the protective switch 33 flow to the electrostatic and generate unit 36, are accumulated on the electrostatic generation unit 36 with eliminating
Negative electrical charge；
It is described when the electrostatic generates unit 36 because accumulating positive charge, and its voltage is caused to be higher than the predeterminated voltage
Electrostatic generates and forms access between unit 36 and the high voltage unit 35, and electric current generates unit 36 by the electrostatic, by described
Protective switch 33 and second diode 32 flow to the high voltage unit 35, are accumulated on the electrostatic generation unit 35 with eliminating
Positive charge.
Further, the protective switch 33 controls the electrostatic by the voltage that the electrostatic generates unit 36 and generates list
Connection and disconnection between the 36 and node P of member.Specifically, when the electrostatic generates the voltage of unit 36 in the default electricity
When pressing in range, the protective switch 33 is in an off state, and the electrostatic generates unit 36 and the low voltage unit 34 and institute
State the isolation of high voltage unit 35；When the voltage that the electrostatic generates unit 36 exceeds the predetermined voltage range, the protection is opened
Close 33 in the conductive state, the electrostatic generates unit 36 to 35 release electrostatic of the low voltage unit 34 or the high voltage unit.
Further, the protective switch 33 includes transistor T, first resistor R1 and second resistance R2；
The first resistor R1 is connected to the grid and the transistor T of the transistor T by the first conducting wire S1
Drain electrode between；The second resistance R2 is connected to the grid and the crystal of the transistor T by the second conducting wire S2
Between the source electrode of pipe T；The first resistor R1 and second resistance R2 limitation flows through the first conducting wire S1 and described second
The electric current of conducting wire S2, to make the grid voltage of the transistor T in the reasonable scope, to control the on-off of the transistor T
State, for example, when the electrostatic generates the voltage of unit 36 in the predetermined voltage range, the grid of the transistor T
The transistor T is connected, i.e., the described protective switch 33 is in an off state undertension；When the electrostatic generates unit 36
Voltage when exceeding the predeterminated voltage, the grid voltage of the transistor T is enough to make the transistor T to be connected, i.e., the described guarantor
It is in the conductive state to protect switch 33；It should be noted that the resistance value of the first resistor R1 and second resistance R2 and described
The conducting voltage of transistor T, which can according to need, to be configured, herein without limitation.
Electrostatic discharge protection circuit provided in this embodiment sets predetermined voltage range to the voltage provided between low voltage unit
Between the voltage provided with high voltage unit, the circuit stable for normal working voltage, i.e. normal working voltage itself will not go out
The circuit of existing larger fluctuation, the fast response time of electrostatic protection, electrostatic protection effect are good.
Second embodiment:
The normal working voltage that the electrostatic generates unit 36 is predeterminated voltage, and the minimum amount of voltage that of the predeterminated voltage is small
In the voltage value that the low voltage unit 34 provides, the maximum voltage value of the predeterminated voltage is greater than what the high voltage unit 35 provided
Voltage value, for example, when the voltage that the low voltage unit 34 provides is -5V, when the voltage that the high voltage unit 35 provides is+5V,
The predeterminated voltage can be the voltage value between -4V to+6V；
It should be noted that the electrostatic discharge protection circuit that second embodiment provides will appear one mainly for normal working voltage
The dynamic circuit of standing wave, for example, the normal working voltage that the electrostatic generates unit 36 is maintained for a long time between -5V to+5V, but
It is quiet at this time since the case where arriving+5V range beyond -5V occurs in the voltage that the normal fluctuation of internal circuit makes electrostatic generate unit 36
The voltage that electricity generates unit 36 is still normal working voltage, should not be discharged by electrostatic discharge protection circuit.
It is described when the electrostatic generates unit 36 because accumulating negative electrical charge, and causes its voltage lower than the predeterminated voltage
Low voltage unit 34 and the electrostatic generate and form access between unit 36, and electric current is by the low voltage unit 34, by described first
Diode 31 and the protective switch 33 flow to the electrostatic and generate unit 36, are accumulated on the electrostatic generation unit 36 with eliminating
Negative electrical charge；
It is described when the electrostatic generates unit 36 because accumulating positive charge, and its voltage is caused to be higher than the predeterminated voltage
Electrostatic generates and forms access between unit 36 and the high voltage unit 35, and electric current generates unit 36 by the electrostatic, by described
Protective switch 33 and second diode 32 flow to the high voltage unit 35, are accumulated on the electrostatic generation unit 35 with eliminating
Positive charge；
It should be noted that the protective switch 33 controls its on-off shape by the voltage that the electrostatic generates unit 36
State；The protective switch 33 is only just connected when the voltage that the electrostatic generates unit 36 exceeds predeterminated voltage；When described quiet
Electricity generates the voltage range that the voltage of unit 36 is provided beyond the low voltage unit 34 with the high voltage unit 35, and without departing from institute
When stating predetermined voltage range, the protective switch 33 is in an off state, to prevent the electrostatic from generating the normal work of unit 36
Make voltage to discharge to the low voltage unit 34 or the high voltage unit 35, that is, prevents from leaking electricity.
Further, the protective switch 33 includes transistor T, first resistor R1 and second resistance R2；
The first resistor R1 is connected to the grid and the transistor T of the transistor T by the first conducting wire S1
Drain electrode between；The second resistance R2 is connected to the grid and the crystal of the transistor T by the second conducting wire S2
Between the source electrode of pipe T；The first resistor R1 and second resistance R2 limitation flows through the first conducting wire S1 and described second
The electric current of conducting wire S2, to make the grid voltage of the transistor T in the reasonable scope, to control the on-off of the transistor T
State, for example, when the electrostatic generates the voltage of unit 36 in the predetermined voltage range, the grid of the transistor T
The transistor T is connected, i.e., the described protective switch 33 is in an off state undertension；When the electrostatic generates unit 36
Voltage when exceeding the predeterminated voltage, the grid voltage of the transistor T is enough to make the transistor T to be connected, i.e., the described guarantor
It is in the conductive state to protect switch 33；It should be noted that the resistance value of the first resistor R1 and second resistance R2 and described
The conducting voltage of transistor T, which can according to need, to be configured, herein without limitation.
Optionally, the electrostatic discharge protection circuit is applied in integrated circuit.
Electrostatic discharge protection circuit provided in this embodiment sets predetermined voltage range to beyond being provided by the low voltage unit
Voltage and the high voltage unit provide voltage defined by voltage range, certain fluctuation will appear for normal working voltage
Circuit, can prevent from leaking electricity, and electrostatic protection effect is good.
Electrostatic discharge protection circuit provided in an embodiment of the present invention does not include the devices such as biggish capacitor that take up space, thus whole
Body size is smaller, is suitble in the circuit design using small size.
Although above-described embodiment is not to limit this hair in conclusion the present invention is disclosed above with specific embodiment
It is bright, those skilled in the art, without departing from the spirit and scope of the present invention, can make it is various change and retouch, because
This protection scope of the present invention be subject to claim define hair range.
Claims (8)
1. a kind of electrostatic discharge protection circuit characterized by comprising
First diode has the function of that one-way conduction, the input terminal of the first diode connect low voltage unit；
Second diode has the function of that one-way conduction, the input terminal of second diode connect the defeated of the first diode
The output end of outlet, second diode connects high voltage unit；And
Protective switch has conducting and break function, and one end connection electrostatic of the protective switch generates unit, and the protection is opened
The other end of pass connects the node between the first diode and second diode；Wherein,
The electrostatic generates the electrostatic that unit generates and is released by the protective switch to the low voltage unit or the high voltage unit
It puts.
2. electrostatic discharge protection circuit according to claim 1, which is characterized in that the electrostatic generates the normal working voltage of unit
For predeterminated voltage, voltage that the voltage and the high voltage unit that the predeterminated voltage is provided between the low voltage unit provide it
Between.
3. electrostatic discharge protection circuit according to claim 1, which is characterized in that the electrostatic generates the normal working voltage of unit
For predeterminated voltage, the minimum amount of voltage that of the predeterminated voltage is less than the voltage value that the low voltage unit provides, the predeterminated voltage
Maximum voltage value be greater than the high voltage unit provide voltage value.
4. the electrostatic discharge protection circuit according to any claim in Claims 2 or 3, which is characterized in that
When the voltage that the electrostatic generates unit is lower than the predeterminated voltage, the low voltage unit and the electrostatic generate unit
Between form access；
When the voltage that the electrostatic generates unit is higher than the predeterminated voltage, the electrostatic generates unit and the high voltage unit
Between form access.
5. the electrostatic discharge protection circuit according to any claim in Claims 2 or 3, which is characterized in that the protective switch
The conducting and disconnection between the electrostatic generation unit and the node are controlled by the voltage that the electrostatic generates unit.
6. electrostatic discharge protection circuit according to claim 5, which is characterized in that the protective switch includes transistor, the first electricity
Resistance and second resistance；
The first resistor is connected between the drain electrode of grid and the transistor of the transistor by the first conducting wire；
The second resistance is connected between the grid of the transistor and the source electrode of the transistor by the second conducting wire；
The source electrode of the transistor is connect with the first node；
The drain electrode of the transistor generates unit with the electrostatic and connect；
When the voltage that the electrostatic generates unit is higher or lower than the predeterminated voltage, described in the grid control of the transistor
The source electrode of transistor is connected with the drain electrode of the transistor, the electrostatic generate electrostatic that unit generates to the high voltage unit or
The low voltage unit release.
7. electrostatic discharge protection circuit according to claim 6, which is characterized in that described in the grid voltage control of the transistor
The source electrode of transistor and the drain electrode of the transistor are turned on or off.
8. electrostatic discharge protection circuit according to claim 1, which is characterized in that the electrostatic discharge protection circuit is applied to integrated circuit
In.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910391825.3A CN110198028B (en) | 2019-05-13 | 2019-05-13 | Electrostatic protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910391825.3A CN110198028B (en) | 2019-05-13 | 2019-05-13 | Electrostatic protection circuit |
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| Publication Number | Publication Date |
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| CN110198028A true CN110198028A (en) | 2019-09-03 |
| CN110198028B CN110198028B (en) | 2021-08-24 |
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| US20020071230A1 (en) * | 2000-12-07 | 2002-06-13 | Philips Electronics North America Corporation | ESD protection devices |
| CN101378056A (en) * | 2007-08-28 | 2009-03-04 | 松下电器产业株式会社 | Semiconductor integrated circuit |
| US7821752B2 (en) * | 2007-02-15 | 2010-10-26 | Hynix Semiconductor Inc. | Device to protect a semiconductor device from electrostatic discharge by efficiently discharging a micro current |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
| CN103872670A (en) * | 2012-12-07 | 2014-06-18 | 创杰科技股份有限公司 | Electrostatic discharge protection circuit, bias circuit and electronic device |
| CN103887306A (en) * | 2014-03-05 | 2014-06-25 | 晶焱科技股份有限公司 | High voltage open drain electrostatic discharge (ESD) protecting device |
| CN108347044A (en) * | 2017-01-25 | 2018-07-31 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
-
2019
- 2019-05-13 CN CN201910391825.3A patent/CN110198028B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20020071230A1 (en) * | 2000-12-07 | 2002-06-13 | Philips Electronics North America Corporation | ESD protection devices |
| US7821752B2 (en) * | 2007-02-15 | 2010-10-26 | Hynix Semiconductor Inc. | Device to protect a semiconductor device from electrostatic discharge by efficiently discharging a micro current |
| CN101378056A (en) * | 2007-08-28 | 2009-03-04 | 松下电器产业株式会社 | Semiconductor integrated circuit |
| CN102693978A (en) * | 2011-03-25 | 2012-09-26 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
| CN103872670A (en) * | 2012-12-07 | 2014-06-18 | 创杰科技股份有限公司 | Electrostatic discharge protection circuit, bias circuit and electronic device |
| CN103887306A (en) * | 2014-03-05 | 2014-06-25 | 晶焱科技股份有限公司 | High voltage open drain electrostatic discharge (ESD) protecting device |
| CN108347044A (en) * | 2017-01-25 | 2018-07-31 | 瑞昱半导体股份有限公司 | Electrostatic discharge protection circuit |
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| CN110198028B (en) | 2021-08-24 |
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