CN117544149B - Load switch circuit - Google Patents

Load switch circuit Download PDF

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Publication number
CN117544149B
CN117544149B CN202311821690.2A CN202311821690A CN117544149B CN 117544149 B CN117544149 B CN 117544149B CN 202311821690 A CN202311821690 A CN 202311821690A CN 117544149 B CN117544149 B CN 117544149B
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China
Prior art keywords
mos tube
type
power supply
external power
output end
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CN202311821690.2A
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CN117544149A (en
Inventor
王婉
孙权
夏雪
陈勇
任钰狄
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XI'AN AEROSPACE MINXIN TECHNOLOGY CO LTD
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XI'AN AEROSPACE MINXIN TECHNOLOGY CO LTD
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H11/00—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result
    • H02H11/002—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection
    • H02H11/003—Emergency protective circuit arrangements for preventing the switching-on in case an undesired electric working condition might result in case of inverted polarity or connection; with switching for obtaining correct connection using a field effect transistor as protecting element in one of the supply lines
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0027—Measuring means of, e.g. currents through or voltages across the switch
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K2217/00—Indexing scheme related to electronic switching or gating, i.e. not by contact-making or -breaking covered by H03K17/00
    • H03K2217/0081—Power supply means, e.g. to the switch driver

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  • Electronic Switches (AREA)

Abstract

The invention provides a load switch circuit, which belongs to the technical field of switch control circuits and comprises: the source electrode of the first N-type power MOS tube MN2 is connected with the output end OUT of the external power supply; a second N-type power MOS transistor MN1; the source electrode of the second N-type power MOS tube MN1 is connected with the input end IN of an external power supply; the second N-type power MOS tube MN1 is connected with the drain electrode of the first N-type power MOS tube MN 2; the DRIVER DRV1 is connected with the grid electrode of the second N-type power MOS tube MN1, and the DRV2 is connected with the grid electrode of the first N-type power MOS tube MN 2; the reverse voltage detection circuit is connected with an input end IN of the external power supply and an output end OUT of the external power supply; the device is used for detecting the level between an input end IN of an input end external power supply and an output end OUT of an output end external power supply; the circuit can ensure that no large current flows into the input end when the output voltage is higher than the voltage of the input end, thereby achieving the function of reverse blocking.

Description

Load switch circuit
Technical Field
The invention belongs to the technical field of switch control circuits, and particularly relates to a load switch circuit.
Background
In complex multi-rail external power systems, battery powered systems and USB compatible power systems are particularly important. The load switch chip has the advantages of low static power consumption, small size, flexible configuration and the like due to various self-integrated protection functions, and is widely applied to battery power supply systems and USB compatible power supply system solutions. The load switch has the basic function of performing current limiting protection when the output is short-circuited or the load current exceeds a specified value, so as to avoid overlarge current and damage to a later-stage circuit.
In the switching path, the output level is higher than the input level, and the load switch is required to open the path to prevent current from remaining from the output terminal to the input terminal. Particularly in battery management systems, if reverse charging occurs, this can result in a bleed of the battery voltage. The most serious condition is that the input end is short-circuited, so that the load switch reversely loads a large current, and the load switch is directly damaged.
In summary, the prior art has the problem that the load switch is damaged by current reverse current filling.
Disclosure of Invention
In order to overcome the defects in the prior art, the invention provides a load switch circuit.
In order to achieve the above object, the present invention provides the following technical solutions:
a load switching circuit, comprising: characterized by comprising the following steps:
The source electrode of the first N-type power MOS tube MN2 is connected with the output end OUT of the external power supply;
A second N-type power MOS transistor MN1; the source electrode of the second N-type power MOS tube MN1 is connected with the input end IN of an external power supply; the second N-type power MOS tube MN1 is connected with the drain electrode of the first N-type power MOS tube MN 2;
the DRIVER DRV1 is connected with the grid electrode of the second N-type power MOS tube MN1, and the DRV2 is connected with the grid electrode of the first N-type power MOS tube MN 2;
The reverse voltage detection circuit is connected with an input end IN of the external power supply and an output end OUT of the external power supply; the device is used for detecting the level between an input end IN of an input end external power supply and an output end OUT of an output end external power supply;
When the difference between the level of the output end OUT of the output end external power supply and the level of the input end IN of the input end external power supply exceeds a differential pressure threshold value, the reverse voltage detection circuit outputs a control signal to the DRIVER DRIVER, the DRIVER DRIVER inputs low levels to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2, at the moment, the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 are turned off, the parasitic diode D2 of the first N-type power MOS tube MN2 is turned on, the parasitic diode D1 of the second N-type power MOS tube MN1 is turned off, and reverse current blocking is realized;
When the voltage difference between the output end OUT of the external power supply and the input end IN of the external power supply is smaller than the voltage difference threshold, the DRIVER inputs a high level to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2, and at the moment, the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 are conducted.
Further, the reverse voltage detection circuit includes:
a first P-type MOS tube MP1; the source electrode is connected with the output end OUT of an external power supply;
A second P-type MOS tube MP2; the source electrode is connected with the input end IN of an external power supply;
The grid electrode of the first P type MOS tube MP1 is connected with the grid electrode of the second P type MOS tube MP2, and the grid electrode of the first P type MOS tube MP1 is connected with the drain electrode of the first P type MOS tube MP 1; the drain electrode of the first P-type MOS tube MP1 and the drain electrode of the second P-type MOS tube MP2 are grounded;
When the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply exceeds a threshold value, the drain voltage of the second P-type MOS tube MP2 is pulled down; when the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply is smaller than a threshold value, the drain voltage of the second P-type MOS tube MP2 is pulled up;
And judging whether the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply exceeds a threshold value or not by utilizing the drain voltage of the second P-type MOS tube MP 2.
Further, a resistor R is arranged on a connecting line between the first P-type MOS tube MP1 and an output end OUT of an external power supply;
The grounding ends of the first P-type MOS tube MP1 and the second P-type MOS tube MP2 are provided with a first current source IBIAS1 and a second current source IBIAS2.
Further, the currents of the first current source IBIAS1 and the second current source IBIAS2 are the same.
Further, the differential pressure threshold is IBIAS 1R.
Further, the reverse voltage detection circuit further includes:
The grid electrode of the third P type MOS tube MP3 is connected with the drain electrode of the second P type MOS tube MP2, and the source electrode of the third P type MOS tube MP3 is connected with the source electrode of the second P type MOS tube MP 2; the drain electrode of the third P-type MOS tube MP3 is grounded;
The input end of the hysteresis inverter INV is connected with the drain electrode of the third P-type MOS tube MP 3;
The input signal end of the DRIVER is connected with the output end of the hysteresis inverter INV; the enabling control signal output end of the DRIVER is connected with the grid electrode of the second N-type power MOS tube MN1, and the analog control signal output end of the DRIVER is connected with the grid electrode of the first N-type power MOS tube MN 2.
Further, a third current source IBIAS3 is provided at the ground end of the third P-type MOS MP 3.
Further, the third input ON of the DRIVER is coupled to receive the enable signal.
The load switch circuit provided by the invention has the following beneficial effects:
Detecting the voltage difference between the output end OUT of the external power supply and the input end IN of the external power supply by utilizing a reverse voltage detection circuit, and when the voltage difference between the output end OUT of the external power supply and the input end IN of the external power supply exceeds a differential pressure threshold value, inputting a low level to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 by utilizing a DRIVER, and turning off the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 at the moment to realize reverse current blocking; when the voltage difference between the output end OUT of the external power supply and the input end IN of the external power supply is smaller than a threshold value, a high level is input to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2, and at the moment, the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 are conducted, so that the conduction of the circuit is realized. Even when the input end IN of the external power supply is 0V, the reverse blocking function can be realized, when the input end IN of the external power supply is 0V, DRV1 and DRV2 are 0V, and the existence of D1 makes the output end OUT of the external power supply and the input end IN of the external power supply unable to realize a passage, thereby realizing the reverse blocking function without additionally processing the grid voltages of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN 2.
The problem of among the prior art, current reverse irrigation makes load switch damage is solved.
Drawings
In order to more clearly illustrate the embodiments of the present invention and the design thereof, the drawings required for the embodiments will be briefly described below. The drawings in the following description are only some of the embodiments of the present invention and other drawings may be made by those skilled in the art without the exercise of inventive faculty.
Fig. 1 is a schematic diagram of a load switch circuit according to the present invention.
Detailed Description
The present invention will be described in detail below with reference to the drawings and the embodiments, so that those skilled in the art can better understand the technical scheme of the present invention and can implement the same. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the present invention, it should be noted that, unless explicitly specified or limited otherwise, the terms "connected," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate medium. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances. In the description of the present invention, unless otherwise indicated, the meaning of "a plurality" is two or more, and will not be described in detail herein.
Example 1:
The invention provides a load switch circuit, in particular as shown in fig. 1, comprising:
Reverse voltage detection circuit and load switch's major structure:
1. reverse voltage detection circuit structure:
The device comprises: the first P-type MOS tube MP1, the second P-type MOS tube MP2, the third P-type MOS tube MP3, the hysteresis inverter INV, the resistor R, the first current source IBIAS1, the second current source IBIAS2 and the third current source IBIAS3.
The connection mode is as follows: IN the reverse voltage detection circuit, one end of a resistor R is connected with an output end OUT of an external power supply of an output port of a load switch, the other end of the resistor R is connected with a source electrode of a first P-type MOS tube MP1, a grid electrode of the first P-type MOS tube MP1, a drain electrode of a second P-type MOS tube MP2 and a grid electrode of a second P-type MOS tube MP2 are connected with an inflow end of a current source IBAS1, a source electrode of the second P-type MOS tube MP2 and a source electrode of a third P-type MOS tube MP3 are connected with an input end IN of the external power supply of the load switch, a drain electrode of the second P-type MOS tube MP2 and a grid electrode of the third P-type MOS tube MP3 are connected with an inflow end of a current source IBIAS2, an input end of the third P-type MOS tube MP3, an input end of a hysteresis inverter is a node IREV, and an output end of the hysteresis inverter is an input signal of a driver DRVIER of the load switch main body structure. The outflow end of the first current source IBIAS1, the outflow end of the second current source IBIAS2 and the outflow end of the third current source IBIAS3 are connected with the ground GND.
2. Load switch main body structure:
the device comprises: the power MOS device comprises a second N-type power MOS transistor MN1, a parasitic diode D1 of the second N-type power MOS transistor MN1, a first N-type power MOS transistor MN2, a parasitic diode D2 of the first N-type power MOS transistor MN2 and a DRIVER.
The connection mode is as follows: the external input port ON is the other input end of the driving DRIVER, and the output end DRV1 of the driving DRIVER is connected with the grid electrode of the second N-type power MOS tube MN 1; the output end DRV2 of the driving DRIVER is connected with the grid electrode of the first N-type power MOS tube MN 2; the source electrode of the second N-type power MOS tube MN1 is connected with the input end IN of the external power supply of the load switch input end, the drain electrode of the second N-type power MOS tube MN1 is connected with the drain electrode of the first N-type power MOS tube MN2, and the source electrode of the first N-type power MOS tube MN2 is connected with the output end OUT of the external power supply of the output port. The forward end of the parasitic diode of the second N-type power MOS tube MN1 is the source stage of the second N-type power MOS tube MN1, and the reverse end of the parasitic diode of the second N-type power MOS tube MN1 is the drain stage of the second N-type power MOS tube MN 1; the forward end of the parasitic diode of the first N-type power MOS transistor MN2 is the source stage of the first N-type power MOS transistor MN2, and the reverse end of the parasitic diode of the first N-type power MOS transistor MN2 is the drain stage of the first N-type power MOS transistor MN 2.
The following is the operating logic of the circuit of the present invention:
The load switching circuit of the present invention includes: the device comprises a reverse voltage detection circuit, a DRIVER, a second N-type power MOS tube MN1 and a first N-type power MOS tube MN2.
The reverse voltage detection circuit detects an input end IN of the external power supply with the input end voltage and an output end OUT of the external power supply with the output end voltage, and compares the voltages of the two ends. The reference current first current source IBIAS1 and the second current source IBIAS2 are of the same magnitude. The threshold voltage difference between the input end and the output end is determined by the reference current and the resistor R, and the threshold voltage difference value is equal to IBIAS1 (2) R. ON is the enable signal of the load switch DRIVER.
When the difference between the voltage of the output end OUT of the output end external power supply and the voltage of the input end IN of the output end external power supply is higher than the threshold value, the gate voltage of the third P-type MOS tube MP3 of the P-type MOS tube is reduced, the drain voltage of the third P-type MOS tube MP3 of the P-type MOS tube is increased, and the level of the hysteresis inverter is turned over, so that IREV is changed from a high level to a low level.
And IREV outputs a high level when the difference between the voltage of the output terminal OUT of the output terminal external power supply and the voltage of the input terminal IN of the output terminal external power supply is lower than the threshold value. The driver outputs DRV1 as an enabling control signal, and the second N-type power MOS transistor MN1 of the N-type power transistor is conducted when the driver outputs high level. The driver output DRV2 is output as an analog control signal, when the load current is smaller than the current limiting value, the driver output DRV2 is the external power supply voltage of the driver, and when the current is limited, the driver output DRV2 is reduced along with the output end OUT of the external power supply with the output end voltage.
And IREV is output as a low level when the difference between the voltage of the output terminal OUT of the output terminal external power supply and the voltage of the input terminal IN of the output terminal external power supply is higher than a threshold value. The driver outputs DRV1 and DRV2 are output low. The second N-type power MOS transistor MN1 and the first N-type power MOS transistor MN2 are turned off. When the output end OUT voltage of the output end external power supply is higher than the input end IN voltage of the input end external power supply, the parasitic diode D2 of the first N-type power MOS tube MN2 is IN a conducting state, and the parasitic diode D1 of the second N-type power MOS tube MN1 is IN a cut-off state, so that current reverse filling can be prevented, even if the input end IN of the input end external power supply is short-circuited, the input voltage is 0V, the output end voltage is high level, no current flows into the input end from the output end, and the reverse blocking effect is achieved.
The above embodiments are merely preferred embodiments of the present invention, the protection scope of the present invention is not limited thereto, and any simple changes or equivalent substitutions of technical solutions that can be obviously obtained by those skilled in the art within the technical scope of the present invention disclosed in the present invention belong to the protection scope of the present invention.

Claims (7)

1. A load switching circuit, comprising:
The source electrode of the first N-type power MOS tube MN2 is connected with the output end OUT of the external power supply;
A second N-type power MOS transistor MN1; the source electrode of the second N-type power MOS tube MN1 is connected with the input end IN of an external power supply; the second N-type power MOS tube MN1 is connected with the drain electrode of the first N-type power MOS tube MN 2;
the DRIVER DRV1 is connected with the grid electrode of the second N-type power MOS tube MN1, and the DRV2 is connected with the grid electrode of the first N-type power MOS tube MN 2;
The reverse voltage detection circuit is connected with an input end IN of the external power supply and an output end OUT of the external power supply; the device is used for detecting the level between an input end IN of an input end external power supply and an output end OUT of an output end external power supply;
When the difference between the level of the output end OUT of the output end external power supply and the level of the input end IN of the input end external power supply exceeds a differential pressure threshold value, the reverse voltage detection circuit outputs a control signal to the DRIVER DRIVER, the DRIVER DRIVER inputs low levels to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2, at the moment, the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 are turned off, the parasitic diode D2 of the first N-type power MOS tube MN2 is turned on, the parasitic diode D1 of the second N-type power MOS tube MN1 is turned off, and reverse current blocking is realized;
When the voltage difference between the output end OUT of the external power supply and the input end IN of the external power supply is smaller than the voltage difference threshold, the DRIVER DRIVER inputs high level to the grid electrodes of the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2, and at the moment, the second N-type power MOS tube MN1 and the first N-type power MOS tube MN2 are conducted;
wherein the reverse voltage detection circuit includes:
a first P-type MOS tube MP1; the source electrode is connected with the output end OUT of an external power supply;
A second P-type MOS tube MP2; the source electrode is connected with the input end IN of an external power supply;
The grid electrode of the first P type MOS tube MP1 is connected with the grid electrode of the second P type MOS tube MP2, and the grid electrode of the first P type MOS tube MP1 is connected with the drain electrode of the first P type MOS tube MP 1; the drain electrode of the first P-type MOS tube MP1 and the drain electrode of the second P-type MOS tube MP2 are grounded;
When the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply exceeds a threshold value, the drain voltage of the second P-type MOS tube MP2 is pulled down; when the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply is smaller than a threshold value, the drain voltage of the second P-type MOS tube MP2 is pulled up;
And judging whether the difference between the voltage of the output end OUT of the external power supply and the voltage of the input end IN of the external power supply exceeds a threshold value or not by utilizing the drain voltage of the second P-type MOS tube MP 2.
2. The load switch circuit according to claim 1, wherein a resistor R is arranged on a connection line between the first P-type MOS transistor MP1 and an output terminal OUT of the external power supply;
The grounding ends of the first P-type MOS tube MP1 and the second P-type MOS tube MP2 are provided with a first current source IBIAS1 and a second current source IBIAS2.
3. The load switching circuit of claim 2, wherein the first current source IBIAS1 and the second current source IBIAS2 have the same current magnitude.
4. The load switching circuit of claim 2, wherein the differential voltage threshold is IBIAS1 x R.
5. The load switching circuit of claim 2, wherein the reverse voltage detection circuit further comprises:
The grid electrode of the third P type MOS tube MP3 is connected with the drain electrode of the second P type MOS tube MP2, and the source electrode of the third P type MOS tube MP3 is connected with the source electrode of the second P type MOS tube MP 2; the drain electrode of the third P-type MOS tube MP3 is grounded;
The input end of the hysteresis inverter INV is connected with the drain electrode of the third P-type MOS tube MP 3;
The input signal end of the DRIVER is connected with the output end of the hysteresis inverter INV; the enabling control signal output end of the DRIVER is connected with the grid electrode of the second N-type power MOS tube MN1, and the analog control signal output end of the DRIVER is connected with the grid electrode of the first N-type power MOS tube MN 2.
6. The load switching circuit according to claim 5, wherein the third P-type MOS transistor MP3 is provided with a third current source IBIAS3 at a ground terminal.
7. A load switching circuit according to claim 1, wherein the third input ON of the DRIVER is coupled to receive the enable signal.
CN202311821690.2A 2023-12-27 2023-12-27 Load switch circuit Active CN117544149B (en)

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Application Number Priority Date Filing Date Title
CN202311821690.2A CN117544149B (en) 2023-12-27 2023-12-27 Load switch circuit

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Application Number Priority Date Filing Date Title
CN202311821690.2A CN117544149B (en) 2023-12-27 2023-12-27 Load switch circuit

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CN117544149B true CN117544149B (en) 2024-06-11

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101997305A (en) * 2009-08-26 2011-03-30 安凯(广州)微电子技术有限公司 Reverse voltage protection circuit and power tube device
CN102684458A (en) * 2012-05-09 2012-09-19 矽力杰半导体技术(杭州)有限公司 Driving circuit of power switching tube and switching power circuit employing driving circuit
CN203387742U (en) * 2013-08-07 2014-01-08 深圳市明微电子股份有限公司 Constant current drive device
CN111293993A (en) * 2020-02-18 2020-06-16 广州慧智微电子有限公司 Power control circuit
CN117081390A (en) * 2023-08-04 2023-11-17 拓尔微电子股份有限公司 DC conversion circuit and DC conversion device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101997305A (en) * 2009-08-26 2011-03-30 安凯(广州)微电子技术有限公司 Reverse voltage protection circuit and power tube device
CN102684458A (en) * 2012-05-09 2012-09-19 矽力杰半导体技术(杭州)有限公司 Driving circuit of power switching tube and switching power circuit employing driving circuit
CN203387742U (en) * 2013-08-07 2014-01-08 深圳市明微电子股份有限公司 Constant current drive device
CN111293993A (en) * 2020-02-18 2020-06-16 广州慧智微电子有限公司 Power control circuit
WO2021164257A1 (en) * 2020-02-18 2021-08-26 广州慧智微电子有限公司 Power control circuit
CN117081390A (en) * 2023-08-04 2023-11-17 拓尔微电子股份有限公司 DC conversion circuit and DC conversion device

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