CN113381591A - High-side switch driving circuit for preventing reverse high voltage - Google Patents
High-side switch driving circuit for preventing reverse high voltage Download PDFInfo
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- CN113381591A CN113381591A CN202110829916.8A CN202110829916A CN113381591A CN 113381591 A CN113381591 A CN 113381591A CN 202110829916 A CN202110829916 A CN 202110829916A CN 113381591 A CN113381591 A CN 113381591A
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- 239000000725 suspension Substances 0.000 claims abstract description 13
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000000087 stabilizing effect Effects 0.000 claims description 6
- 230000002265 prevention Effects 0.000 claims description 2
- 230000002159 abnormal effect Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6871—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
Abstract
The invention provides an anti-reverse high-voltage high-side switch driving circuit, which comprises a first high-voltage switch tube, a second high-voltage switch tube, a comparator circuit and a suspension power supply module, wherein the first high-voltage switch tube and the second high-voltage switch tube are sequentially connected in series; the first high-voltage switch tube is connected to a power supply, and the second high-voltage switch tube is connected to an IO port; the first high-voltage switch tube is connected with the comparator circuit and used for comparing the power supply voltage with the input voltage, and when reverse high voltage exists, the grid electrode of the first high-voltage switch tube is connected to the reverse high voltage to cut off the first high-voltage switch tube; the suspension power supply module is connected with a source electrode of the second high-voltage switch tube and a common ground end of the driving stage, and when IO is high voltage, the suspension power supply module pulls up the voltage of the common ground end of the driving stage to protect the driving stage. The invention can drive IO during normal work, can prevent the IO from reversely flowing current to a power supply and protect a driving stage from being damaged during abnormal high jump.
Description
Technical Field
The present disclosure relates to the field of integrated circuit technology, and in particular, to a reverse high voltage prevention high-side switch driving circuit.
Background
The driver stages for driving the bus or device are divided into a high side driver for pulling the output stage to a high level of the power supply and a low side driver for pulling the output stage to a low level of ground. The bus or device sees a high voltage due to various disturbances, which requires the driver stage to be able to withstand the high voltage and disconnect it from the power supply.
A conventional high-side driver structure is shown in fig. 1, which is a structure that a substrate is connected to a high voltage by a substrate selection circuit to prevent reverse bias, 10 is a driving stage, which is connected to a signal input and a high-side PMOS power transistor 15, and the driving power transistor is turned on or off according to the state of an input signal. The driving power tube 15 connects the power supply vdd and the IO port, and can drive the IO port to the power supply vdd side. The substrate of the power tube 15 is controlled by the substrate selection circuit pmos tube 12 and pmos tube 14, when vdd is higher than IO voltage, the pmos tube 12 is turned on, the pmos tube 14 is turned off, and the substrate of the power tube 15 is connected to vdd; when vdd is lower than the IO voltage, the pmos transistor 12 is turned off, the pmos transistor 14 is turned on, and the substrate of the power transistor 15 is connected to IO; thus, the parasitic diode 11 and the diode 13 of the power tube 15 are always in the reverse bias state, and the current sinking to vdd can be prevented when IO is high. The circuit starts to work when IO is higher than a power supply by a threshold voltage, reverse overcurrent is large, and a driving stage cannot be protected when IO is in high-speed voltage jump.
Disclosure of Invention
In view of this, the embodiments of the present disclosure provide an anti-reverse high-voltage high-side switch driving circuit, a driving stage architecture of the driving circuit can drive IO during normal operation, and can prevent the IO from flowing backward to a power supply and protect the driving stage from being damaged during abnormal high jump.
In order to achieve the above purpose, the invention provides the following technical scheme:
a high-side switch driving circuit for preventing reverse high voltage is connected to a high-side driving stage, comprises a first high-voltage switch tube and a second high-voltage switch tube which are sequentially connected in series, and further comprises a comparator circuit and a suspension power supply module;
the drain electrode of the first high-voltage switch tube is connected to a power supply and used for bearing reverse high voltage, the drain electrode of the second high-voltage switch tube is connected to an IO port and used for normally driving IO, and the source electrode of the first high-voltage switch tube is connected with the source electrode of the second high-voltage switch tube;
the grid electrode of the first high-voltage switch tube is connected with the comparator circuit, the comparator circuit is used for comparing power supply voltage with input voltage, and when reverse high voltage exists, the grid electrode of the first high-voltage switch tube is connected to the reverse high voltage, so that the first high-voltage switch tube is cut off, and the reverse high voltage is blocked;
the suspension power supply module is connected with a source electrode of the second high-voltage switch tube and a public ground end of the driving stage and used for driving the second high-voltage switch tube, and when IO is high voltage, the suspension power supply module pulls up the voltage of the public ground end of the driving stage to protect the driving stage.
Furthermore, the suspension power supply module comprises a voltage stabilizing loop, and a reference voltage of the input voltage and a voltage of the common ground terminal are connected to the voltage stabilizing loop and used for enabling the voltage of the common ground terminal to change along with the change of the reference voltage.
Furthermore, the floating power supply module further comprises a first current source, a first resistor and a first capacitor, wherein one end of the first resistor and one end of the first capacitor are connected with an input voltage, and the other end of the first resistor and the other end of the first capacitor are connected with the first current source and are used for forming the reference voltage.
Furthermore, the voltage stabilizing loop comprises an operational amplifier, a second current source and a first NMOS transistor, wherein an input end of one side of the operational amplifier is connected to the reference voltage, an input end of the other side of the operational amplifier is connected to a common ground end, one end of the second current source is connected to the input voltage, the other end of the second current source is connected to the common ground end and a drain electrode of the first NMOS transistor, and an output end of the operational amplifier is connected to a gate electrode of the first NMOS transistor.
Furthermore, the floating power supply module further comprises a second NMOS transistor, a drain of the second NMOS transistor is connected to the input voltage, a source of the second NMOS transistor is connected to the common ground, and a gate of the second NMOS transistor is connected to the input terminal of the operational amplifier.
The comparator circuit comprises a comparator, an input end of the comparator comprises a second resistor, a first PMOS (P-channel metal oxide semiconductor) tube, a third resistor, a second PMOS tube, a third current source and a fourth current source, a first end of the second resistor is connected to a power supply, a second end of the second resistor is connected to a source electrode of the first PMOS tube, a first end of the third resistor is connected to an input voltage, a second end of the third resistor is connected to a source electrode of the second PMOS tube, and the third current source and the fourth current source are respectively connected to drain electrodes of the first PMOS tube and the second PMOS tube to provide bias current; and the grid electrode of the second PMOS tube is connected with the grid electrode and the drain electrode of the first PMOS tube.
Furthermore, the input end of the comparator further includes a third PMOS transistor, a gate of the third PMOS transistor is connected to the second end of the second resistor, and a source of the third PMOS transistor is connected to the second end of the third resistor, and is configured to clamp a source voltage of the second PMOS transistor.
Furthermore, the output end of the comparator comprises a fourth resistor, a fifth resistor, a fourth PMOS transistor, a fifth current source, a sixth current source, a first switch and a second switch, the first end of the fourth resistor is connected to the source electrode of the first high-voltage switching transistor, the second end of the fourth resistor is connected to the gate electrode of the first high-voltage switching transistor, the source electrode of the fourth PMOS transistor is connected to the source electrode of the first high-voltage switching transistor, the drain electrode of the fourth PMOS transistor is connected to the gate electrode of the first high-voltage switching transistor, the first end of the fifth resistor is connected to the source electrode of the fourth PMOS transistor, and the second end of the fifth resistor is connected to the gate electrode of the fourth PMOS transistor; the second end of the fifth resistor is connected with the fifth current source through the first switch, and the second end of the fourth resistor is connected with the sixth current source through the second switch.
Further, the common terminal of the third current source, the fourth current source, the fifth current source and the sixth current source is grounded.
Further, the first high-voltage switch tube and the second high-voltage switch tube are both PMOS transistors.
According to the high-side switch driving circuit for preventing high voltage from being reversed, the driving stage framework of the driving circuit can bear high voltage, the driving stage is protected from being damaged when IO is high voltage, the high voltage is prevented from being reversely injected to a low-voltage power supply end, and the driving circuit can be used for driving buses and various power devices.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the drawings needed to be used in the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present disclosure, and it is obvious for those skilled in the art that other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic diagram of a conventional high-side driver structure;
fig. 2 is a high-side switch driving stage architecture according to the present invention;
FIG. 3 is a schematic structural diagram of a suspended power supply module according to the present invention;
fig. 4 is a schematic diagram of a comparator circuit structure in the present invention.
Detailed Description
The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.
The embodiments of the present disclosure are described below with specific examples, and other advantages and effects of the present disclosure will be readily apparent to those skilled in the art from the disclosure in the specification. It is to be understood that the described embodiments are merely illustrative of some, and not restrictive, of the embodiments of the disclosure. The disclosure may be embodied or carried out in various other specific embodiments, and various modifications and changes may be made in the details within the description without departing from the spirit of the disclosure. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments disclosed herein without making any creative effort, shall fall within the protection scope of the present disclosure.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the disclosure, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present disclosure, and the drawings only show the components related to the present disclosure rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that the aspects may be practiced without these specific details.
The embodiment of the disclosure provides an anti-reverse high-voltage high-side switch driving circuit, which is connected to a high-side driving stage and comprises a first high-voltage switch tube, a second high-voltage switch tube, a comparator circuit and a suspension power supply module, wherein the first high-voltage switch tube and the second high-voltage switch tube are sequentially connected in series;
the drain electrode of the first high-voltage switch tube is connected to a power supply and used for bearing reverse high voltage, the drain electrode of the second high-voltage switch tube is connected to an IO port and used for normally driving IO, and the source electrode of the first high-voltage switch tube is connected with the source electrode of the second high-voltage switch tube;
the grid electrode of the first high-voltage switch tube is connected with the comparator circuit, the comparator circuit is used for comparing power supply voltage with input voltage, and when reverse high voltage exists, the grid electrode of the first high-voltage switch tube is connected to the reverse high voltage, so that the first high-voltage switch tube is cut off, and the reverse high voltage is blocked;
the suspension power supply module is connected with a source electrode of the second high-voltage switch tube and a public ground end of the driving stage and used for driving the second high-voltage switch tube, and when IO is high voltage, the suspension power supply module pulls up the voltage of the public ground end of the driving stage to protect the driving stage.
As shown in fig. 2, the high-side driver stage architecture proposed by the present invention is shown. The high side is formed by connecting in series a first high voltage switch tube 26 and a second high voltage switch tube 24, the first high voltage switch tube 26 is used for connecting the power supply side and the source electrode of the second high voltage switch tube 24, and the second high voltage switch tube 24 is used for connecting the source electrode and the IO port of the first high voltage switch tube 26. The comparator circuit 25 compares the Vdd voltage with the Vdd _ int voltage, and when Vdd is higher than Vdd _ int, the comparator circuit 25 outputs low, the first high-voltage switch tube 26 is turned on, and the circuit can normally drive the IO port. When vdd is lower than vdd _ int, the output of the comparator circuit 25 is high, the first high-voltage switch tube 26 is turned off, and the first parasitic diode 27 is also turned off in the reverse direction, so that the high voltage of vdd _ int can be prevented from flowing back to the vdd power supply. The floating power module 20 is connected to the source vdd _ int of the second high-voltage switch 24 and the ground vss _ int of the driving stage, and is configured to drive the second high-voltage switch 24. When IO is in high-voltage, the second parasitic diode 28 of the second high-voltage switch tube 24 is turned on, vdd _ int can jump together with IO, and the floating power supply module 20 ensures that the ground vss _ int of the driving stage can jump together, so that the level shifter 22, the high-voltage side driver 23 and the gate-source electrode of the second high-voltage switch tube 24 of the driving stage can be always in a low-voltage state, and the IO can not be damaged after being changed into high-voltage. The input signal Din is transmitted to the second high-voltage switch tube 24 through the module low-voltage side driver 21, the level shifter 22 and the high-voltage side driver 23, and is controlled to be normally turned on or off.
As shown in fig. 3, fig. 3 shows a floating power module structure proposed by the present invention. A first current source 32 is connected to the first resistor 31 and the first capacitor 30 to form a reference voltage vref relative to vdd _ int. One side input end of the operational amplifier 33 is connected with the reference voltage vref, the other side input end is connected with the common ground end, one end of the second current source 36 is connected with the input voltage, the other end of the second current source is connected with the common ground end and the drain electrode of the first NMOS tube 34, and the output end of the operational amplifier 33 is connected with the grid electrode of the first NMOS tube 34. The operational amplifier 33, the second current source 36 and the high voltage first NMOS transistor 34 form a voltage regulation loop, so that the floating ground vss _ int follows the variation of the reference voltage vref. When vdd _ int jumps, first resistor 31 and first capacitor 30 cause vref to follow vdd _ int jumps, and the regulation loop causes vss _ int to follow vref jumps, so that vss _ int follows vdd _ int jumps. The second current source 36 and the first NMOS transistor 34 may provide a certain input-output current capability to vss _ int. The drain of the second NMOS transistor 35 is connected to vdd _ int, the source is connected to vss _ int, and the gate is connected to the input of the operational amplifier 33, so that when vdd _ int is fast-ramped up, vss _ int can be also fast-ramped up to provide a fast response path, and meanwhile, when the system vdd is unpowered and the first current source 32 and the second current source 36 do not provide current, vss _ int can follow vdd _ int.
As shown in fig. 4, the structure of the anti-reverse comparator circuit proposed by the present invention is shown in fig. 4. Input side of comparator 47: the second resistor 40 is connected to vdd and the first PMOS transistor 43, the third resistor 41 is connected to vdd _ int and the second PMOS transistor 44, the third current source 45 and the fourth current source 46 are respectively connected to the first PMOS transistor 43 and the second PMOS transistor 44 for providing a bias current, when vdd is higher than vdd _ int, the drain output of the second PMOS transistor 44 is at a low level, and when vdd is lower than vdd _ int, the output of the second PMOS transistor 44 is at a high level. The gate of the third PMOS transistor 42 is connected to the lower end of the second resistor 40, and the source is connected to the lower end of the third resistor 41, so as to clamp the source voltage of the second PMOS transistor 44, so that the source voltage is not higher than vdd plus a threshold voltage when vdd _ int is high, thereby protecting the low-voltage device.
Output side of comparator 47: the fourth resistor 49 is connected to the gate Vgate and the source vdd _ int of the first high-voltage switch 26 in fig. 2, the fourth PMOS transistor 50 is also connected to the gate Vgate and the source vdd _ int of the first high-voltage switch 26 in fig. 2, and the fifth resistor 48 is connected to the gate and the source of the fourth PMOS transistor 50. When the vdd voltage is higher than vdd _ int, the first switch 52 is turned on, the fifth resistor 48 short-circuits the gate-source of the fourth PMOS transistor 50, the fourth PMOS transistor 50 is turned off, the second switch 53 is turned on, and the sixth current source 55 pulls the Vgate potential low through the fourth resistor 49, so that the first high-voltage switch 26 in fig. 2 is normally turned on to operate. When the Vdd voltage is lower than Vdd _ int, the first switch 52 is closed, the fifth current source 54 biases the gate source of the fourth PMOS transistor 50 through the fifth resistor 48, the fourth PMOS transistor 50 is turned on, and the Vgate and Vdd _ int are short-circuited, so that the first high-voltage switch tube 26 in fig. 2 is turned off, and the back-sink current at the high voltage of Vdd _ int is prevented from flowing to Vdd. When the system vdd is dead and the fifth current source 54 and the sixth current source 55 do not supply current, the fourth resistor 49 also causes the Vgate voltage to short-circuit to vdd _ int, and the first high-voltage switch 26 is in the blocking and anti-reverse-bias state in fig. 2.
The driving stage framework can drive IO (input/output) during normal work, and can prevent the IO from reversely sinking current to a power supply and protect the driving stage from being damaged during abnormal high jump.
The above description is only for the specific embodiments of the present disclosure, but the scope of the present disclosure is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present disclosure should be covered within the scope of the present disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.
Claims (10)
1. A high-side switch driving circuit for preventing reverse high voltage is connected to a high-side driving stage and is characterized by comprising a first high-voltage switch tube and a second high-voltage switch tube which are sequentially connected in series, a comparator circuit and a suspension power supply module;
the drain electrode of the first high-voltage switch tube is connected to a power supply and used for bearing reverse high voltage, the drain electrode of the second high-voltage switch tube is connected to an IO port and used for normally driving IO, and the source electrode of the first high-voltage switch tube is connected with the source electrode of the second high-voltage switch tube;
the grid electrode of the first high-voltage switch tube is connected with the comparator circuit, the comparator circuit is used for comparing power supply voltage with input voltage, and when reverse high voltage exists, the grid electrode of the first high-voltage switch tube is connected to the reverse high voltage, so that the first high-voltage switch tube is cut off, and the reverse high voltage is blocked;
the suspension power supply module is connected with a source electrode of the second high-voltage switch tube and a public ground end of the driving stage and used for driving the second high-voltage switch tube, and when IO is high voltage, the suspension power supply module pulls up the voltage of the public ground end of the driving stage to protect the driving stage.
2. The high-side switch driving circuit for preventing reverse high voltage according to claim 1, wherein the floating power supply module comprises a voltage stabilizing loop, and a reference voltage of the input voltage and a common ground voltage are connected to the voltage stabilizing loop for enabling the common ground voltage to change along with the change of the reference voltage.
3. The high-side switch driving circuit for preventing reverse high voltage according to claim 2, wherein the floating power supply module further comprises a first current source, a first resistor and a first capacitor, one end of the first resistor and the first capacitor is connected to an input voltage, and the other end of the first resistor and the first capacitor is connected to the first current source for forming the reference voltage.
4. The high-side switch driving circuit for preventing reverse high voltage according to claim 2 or 3, wherein the voltage stabilizing loop comprises an operational amplifier, a second current source and a first NMOS transistor, one input end of the operational amplifier is connected to the reference voltage, the other input end of the operational amplifier is connected to a common ground, one end of the second current source is connected to the input voltage, the other end of the second current source is connected to the common ground and a drain electrode of the first NMOS transistor, and an output end of the operational amplifier is connected to a gate electrode of the first NMOS transistor.
5. The high-side switch driving circuit for preventing reverse high voltage according to claim 4, wherein the floating power supply module further comprises a second NMOS transistor, a drain of the second NMOS transistor is connected to the input voltage, a source of the second NMOS transistor is connected to the common ground, and a gate of the second NMOS transistor is connected to the input terminal of the operational amplifier.
6. The high-side switch driving circuit for preventing reverse high voltage according to claim 5, wherein the comparator circuit comprises a comparator, an input terminal of the comparator comprises a second resistor, a first PMOS transistor, a third resistor, a second PMOS transistor, a third current source and a fourth current source, a first terminal of the second resistor is connected to a power supply, a second terminal of the second resistor is connected to a source electrode of the first PMOS transistor, a first terminal of the third resistor is connected to an input voltage, a second terminal of the third resistor is connected to a source electrode of the second PMOS transistor, and the third current source and the fourth current source are respectively connected to drain electrodes of the first PMOS transistor and the second PMOS transistor for providing a bias current; and the grid electrode of the second PMOS tube is connected with the grid electrode and the drain electrode of the first PMOS tube.
7. The high-side switch driving circuit for preventing reverse high voltage according to claim 6, wherein the input terminal of the comparator further comprises a third PMOS transistor, a gate of the third PMOS transistor is connected to the second terminal of the second resistor, and a source of the third PMOS transistor is connected to the second terminal of the third resistor, for clamping a source voltage of the second PMOS transistor.
8. The reverse high voltage prevention high-side switch driving circuit according to claim 7, wherein the output terminal of the comparator comprises a fourth resistor, a fifth resistor, a fourth PMOS transistor, a fifth current source, a sixth current source, a first switch and a second switch, the first terminal of the fourth resistor is connected to the source of the first high-voltage switch transistor, the second terminal of the fourth resistor is connected to the gate of the first high-voltage switch transistor, the source of the fourth PMOS transistor is connected to the source of the first high-voltage switch transistor, the drain of the fourth PMOS transistor is connected to the gate of the first high-voltage switch transistor, the first terminal of the fifth resistor is connected to the source of the fourth PMOS transistor, and the second terminal of the fifth resistor is connected to the gate of the fourth PMOS transistor; the second end of the fifth resistor is connected with the fifth current source through the first switch, and the second end of the fourth resistor is connected with the sixth current source through the second switch.
9. The high-side switch driving circuit for preventing reverse high voltage according to claim 8, wherein the common terminal of the third current source, the fourth current source, the fifth current source and the sixth current source is grounded.
10. The high-side switch driving circuit for preventing reverse high voltage according to claim 1, wherein the first high-voltage switch tube and the second high-voltage switch tube are both PMOS transistors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110829916.8A CN113381591A (en) | 2021-07-22 | 2021-07-22 | High-side switch driving circuit for preventing reverse high voltage |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110829916.8A CN113381591A (en) | 2021-07-22 | 2021-07-22 | High-side switch driving circuit for preventing reverse high voltage |
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| CN113381591A true CN113381591A (en) | 2021-09-10 |
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| CN202110829916.8A Pending CN113381591A (en) | 2021-07-22 | 2021-07-22 | High-side switch driving circuit for preventing reverse high voltage |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115202425A (en) * | 2022-09-15 | 2022-10-18 | 成都市易冲半导体有限公司 | IO (input/output) design circuit and method for detecting ultra-low power supply voltage of serial communication bus |
| WO2024031994A1 (en) * | 2022-08-09 | 2024-02-15 | 无锡力芯微电子股份有限公司 | Current backflow preventing circuit structure |
-
2021
- 2021-07-22 CN CN202110829916.8A patent/CN113381591A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024031994A1 (en) * | 2022-08-09 | 2024-02-15 | 无锡力芯微电子股份有限公司 | Current backflow preventing circuit structure |
| CN115202425A (en) * | 2022-09-15 | 2022-10-18 | 成都市易冲半导体有限公司 | IO (input/output) design circuit and method for detecting ultra-low power supply voltage of serial communication bus |
| CN115202425B (en) * | 2022-09-15 | 2022-11-22 | 成都市易冲半导体有限公司 | IO (input/output) design circuit and method for detecting ultra-low power supply voltage of serial communication bus |
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