CN110177900A - 废液回收系统、化学浴沉积装置及其沉积方法 - Google Patents

废液回收系统、化学浴沉积装置及其沉积方法 Download PDF

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CN110177900A
CN110177900A CN201880002715.7A CN201880002715A CN110177900A CN 110177900 A CN110177900 A CN 110177900A CN 201880002715 A CN201880002715 A CN 201880002715A CN 110177900 A CN110177900 A CN 110177900A
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waste liquid
reserve tank
chemical liquids
chemical
cadmium
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王磊
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Shanghai zuqiang Energy Co.,Ltd.
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Beijing Apollo Ding Rong Solar Technology Co Ltd
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Abstract

一种废液回收系统(200)、化学浴沉积装置(300)及其沉积方法，废液回收系统(200)包括：废液储存槽(202)，用于储存硫化镉沉积槽沉积产生的废液；制冷装置(203)，用于对储存的所述废液制冷；过滤装置(204)，用于过滤制冷得到的废液；化学液储存槽(205)，用于储存过滤后的废液。废液回收系统(200)、化学浴沉积装置(300)及其沉积方法，通过对废液进行制冷、过滤，再补充化学品原料，从而得到与原液浓度相同的化学液，从而显著提高了废液的回收利用，降低了生产成本。

Description

PCT国内申请，说明书已公开。

Claims (19)

  1. PCT国内申请，权利要求书已公开。
CN201880002715.7A 2017-12-20 2018-09-14 废液回收系统、化学浴沉积装置及其沉积方法 Pending CN110177900A (zh)

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CN201711386486.7A CN108048822A (zh) 2017-12-20 2017-12-20 化学浴沉积装置及其沉积方法、废液回收系统
CN2017113864867 2017-12-20
PCT/CN2018/105795 WO2019119902A1 (zh) 2017-12-20 2018-09-14 废液回收系统、化学浴沉积装置及其沉积方法

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US (1) US20190189829A1 (zh)
EP (1) EP3502061A1 (zh)
JP (1) JP2019111526A (zh)
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AU (1) AU2018236877A1 (zh)
WO (1) WO2019119902A1 (zh)

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CN108048822A (zh) * 2017-12-20 2018-05-18 北京铂阳顶荣光伏科技有限公司 化学浴沉积装置及其沉积方法、废液回收系统
CN110487849A (zh) * 2019-09-10 2019-11-22 华能国际电力股份有限公司 一种多参数水质测量系统及方法
CN111613558B (zh) * 2020-06-04 2022-08-26 厦门通富微电子有限公司 一种排液装置、过滤系统以及半导体处理设备
CN113387472A (zh) * 2021-06-07 2021-09-14 先导薄膜材料有限公司 一种含铟废水中除镉铊的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967957A (en) * 1973-03-26 1976-07-06 Continental Oil Company Aqueous ammonia oxidative leach and recovery of metal values
CN2480380Y (zh) * 2001-05-28 2002-03-06 财团法人工业技术研究院 液相沉积生产装置
CN101820028A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 多段式硫化镉薄膜沉积方法
CN102887603A (zh) * 2012-10-08 2013-01-23 尚越光电科技有限公司 铜铟镓硒CIGS薄膜太阳电池生产过程中产生的CdS废液回收利用方法
CN103103505A (zh) * 2011-11-14 2013-05-15 绿阳光电股份有限公司 化学混浴沉积系统
CN103320774A (zh) * 2013-07-15 2013-09-25 北京四方继保自动化股份有限公司 一种化学水浴沉积硫化镉薄膜的方法及装置
EP2860281A1 (en) * 2013-10-10 2015-04-15 Samsung SDI Co., Ltd. Method of recycling solution, solar cell including buffer layer formed by the method, and deposition apparatus
CN204999994U (zh) * 2015-09-02 2016-01-27 四川洪芯微科技有限公司 一种半导体玻璃钝化电泳装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002162497A (ja) * 2000-11-22 2002-06-07 Hitachi Ltd 放射性廃液の処理方法及び装置
JP4098669B2 (ja) * 2003-05-27 2008-06-11 日本パーカライジング株式会社 りん酸塩化成処理液の回収再利用方法
TWI235425B (en) * 2004-05-26 2005-07-01 Promos Technologies Inc Etching system and method for treating the etching solution thereof
TWI334624B (en) * 2006-01-30 2010-12-11 Dainippon Screen Mfg Apparatus for and method for processing substrate
US7541067B2 (en) * 2006-04-13 2009-06-02 Solopower, Inc. Method and apparatus for continuous processing of buffer layers for group IBIIIAVIA solar cells
CN203270030U (zh) * 2013-04-18 2013-11-06 北京大学 一种硫化镉化学水浴镀膜反应器
CN104726865A (zh) * 2013-12-24 2015-06-24 张逸 一种碱性蚀刻废液回收再生装置
CN106512542A (zh) * 2015-09-10 2017-03-22 陈飞 一种循环利用废液的回收装置
CN106591865A (zh) * 2017-02-21 2017-04-26 刘长江 一种钢丝表面处理产生废液的循环处理再利用工艺及设备
CN108048822A (zh) * 2017-12-20 2018-05-18 北京铂阳顶荣光伏科技有限公司 化学浴沉积装置及其沉积方法、废液回收系统

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967957A (en) * 1973-03-26 1976-07-06 Continental Oil Company Aqueous ammonia oxidative leach and recovery of metal values
CN2480380Y (zh) * 2001-05-28 2002-03-06 财团法人工业技术研究院 液相沉积生产装置
CN101820028A (zh) * 2010-02-11 2010-09-01 昆山正富机械工业有限公司 多段式硫化镉薄膜沉积方法
CN103103505A (zh) * 2011-11-14 2013-05-15 绿阳光电股份有限公司 化学混浴沉积系统
CN102887603A (zh) * 2012-10-08 2013-01-23 尚越光电科技有限公司 铜铟镓硒CIGS薄膜太阳电池生产过程中产生的CdS废液回收利用方法
CN103320774A (zh) * 2013-07-15 2013-09-25 北京四方继保自动化股份有限公司 一种化学水浴沉积硫化镉薄膜的方法及装置
EP2860281A1 (en) * 2013-10-10 2015-04-15 Samsung SDI Co., Ltd. Method of recycling solution, solar cell including buffer layer formed by the method, and deposition apparatus
CN204999994U (zh) * 2015-09-02 2016-01-27 四川洪芯微科技有限公司 一种半导体玻璃钝化电泳装置

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