WO2019119902A1 - 废液回收系统、化学浴沉积装置及其沉积方法 - Google Patents

废液回收系统、化学浴沉积装置及其沉积方法 Download PDF

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WO2019119902A1
WO2019119902A1 PCT/CN2018/105795 CN2018105795W WO2019119902A1 WO 2019119902 A1 WO2019119902 A1 WO 2019119902A1 CN 2018105795 W CN2018105795 W CN 2018105795W WO 2019119902 A1 WO2019119902 A1 WO 2019119902A1
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waste liquid
chemical
storage tank
liquid
liquid storage
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PCT/CN2018/105795
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English (en)
French (fr)
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王磊
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北京铂阳顶荣光伏科技有限公司
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Priority to CN201880002715.7A priority Critical patent/CN110177900A/zh
Publication of WO2019119902A1 publication Critical patent/WO2019119902A1/zh

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    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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    • C23C18/125—Process of deposition of the inorganic material
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    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
    • H—ELECTRICITY
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    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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    • C02F2103/00—Nature of the water, waste water, sewage or sludge to be treated
    • C02F2103/34—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32
    • C02F2103/346—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from semiconductor processing, e.g. waste water from polishing of wafers
    • C—CHEMISTRY; METALLURGY
    • C02—TREATMENT OF WATER, WASTE WATER, SEWAGE, OR SLUDGE
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    • C02F2103/40—Nature of the water, waste water, sewage or sludge to be treated from industrial activities not provided for in groups C02F2103/12 - C02F2103/32 from the manufacture or use of photosensitive materials
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    • C02F2209/003—Downstream control, i.e. outlet monitoring, e.g. to check the treating agents, such as halogens or ozone, leaving the process
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02W—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO WASTEWATER TREATMENT OR WASTE MANAGEMENT
    • Y02W10/00—Technologies for wastewater treatment
    • Y02W10/30—Wastewater or sewage treatment systems using renewable energies
    • Y02W10/37—Wastewater or sewage treatment systems using renewable energies using solar energy

Definitions

  • the present disclosure relates to a production technology of a solar cell, and in particular to a chemical bath deposition device, a deposition method thereof, and a waste liquid recovery system.
  • copper indium gallium selenide (CIGS) solar cell technology has a very broad industrialization prospect. Its products can be based on large-size substrates of rigid glass, photovoltaic power stations built in places with strong illumination, and also used in building curtain walls, photovoltaic building integration (BIPV). At the same time, the copper indium gallium selenide photovoltaic module can also be made into a flexible small size product, its soft and thin characteristics can make it stand out in portable power generation products, such as thin film power generation paper, power generation backpack and so on.
  • CIPV photovoltaic building integration
  • Cadmium sulfide is the best n-junction buffer material found to date in the production of CIGS photovoltaic modules.
  • the interface between the CdS layer and the CIGS layer is a p-n junction for the separation of excitons generated after light absorption, so the effect of CdS layer deposition, especially compactness, has a great influence on the efficiency of the component.
  • the present disclosure provides a waste liquid recovery system, a chemical bath deposition apparatus, and a deposition method thereof, thereby improving the recovery efficiency of the waste liquid and/or reducing the production cost.
  • a waste liquid recovery system comprising:
  • a waste liquid storage tank for storing waste liquid generated by deposition of a cadmium sulfide deposition tank
  • a filtering device for filtering waste liquid obtained by cooling
  • a chemical liquid storage tank for storing the filtered waste liquid
  • the liquid inlet of the waste liquid storage tank is connected to the liquid outlet of the cadmium sulfide reaction tank;
  • the liquid outlet of the waste liquid storage tank is connected to the liquid inlet of the refrigeration device;
  • the liquid outlet of the refrigeration device is connected to the liquid inlet of the filtering device
  • the liquid outlet of the filtering device is connected to the waste liquid inlet of the chemical liquid storage tank.
  • the waste liquid recovery system as described above, wherein preferably, the waste liquid recovery system further includes a cooling device that is coated on an outer wall of the waste liquid storage tank.
  • the coolant in the cooling device is water.
  • the liquid outlet of the chemical liquid storage tank is connected to the liquid inlet of the cadmium sulfide deposition tank, and a first regulating valve is disposed therebetween.
  • waste liquid recovery system as described above, wherein the waste liquid recovery system further comprises a heat retention device disposed on an outer wall of the chemical liquid storage tank for holding the chemical liquid storage tank The temperature is within the set temperature range.
  • the waste liquid recovery system as described above further comprising a first power pump, a second power pump, a third power pump, and a fourth power pump, wherein the first power pump is used to pump the waste liquid in the chemical bath deposition tank In the waste liquid storage tank, the second power pump is used to pump the waste liquid in the waste liquid storage tank into the refrigeration device; the third power pump is used to pump the waste liquid in the refrigeration device into the filter device and The four-power pump is used to pump the chemical liquid in the filter unit into the chemical liquid storage tank.
  • a chemical bath deposition apparatus comprising:
  • a waste liquid storage tank for storing the waste liquid generated by the cadmium sulfide deposition
  • a filtering device for filtering waste liquid obtained by cooling
  • a chemical storage tank for storing the filtered waste liquid
  • a replenishing device for replenishing the chemical raw material into the chemical liquid storage tank
  • the liquid inlet of the waste liquid storage tank is connected to the liquid outlet of the cadmium sulfide deposition tank;
  • the liquid outlet of the waste liquid storage tank is connected to the liquid inlet of the refrigeration device;
  • the liquid outlet of the refrigeration device is connected to the liquid inlet of the filtering device
  • the liquid outlet of the filtering device is connected to the waste liquid inlet of the chemical liquid storage tank;
  • the liquid outlet of the supplementary drug supply device is connected to the raw material inlet of the chemical liquid storage tank;
  • the liquid outlet of the chemical liquid storage tank is connected to the liquid inlet of the cadmium sulfide deposition tank.
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising: a cooling device coated on an outer wall of the waste liquid storage tank.
  • the cooling liquid in the cooling device is water.
  • a first regulating valve is disposed between the liquid outlet of the chemical liquid storage tank and the liquid inlet of the cadmium sulfide deposition tank;
  • a second regulating valve is disposed between the liquid inlet of the chemical liquid storage tank and the liquid outlet of the supplementary drug supply device.
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising a conductivity detector disposed in the chemical liquid storage tank for measuring electrical conductivity of the waste liquid in the chemical liquid storage tank.
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising an ion detector disposed in the chemical liquid storage tank for measuring a concentration of Cd 2+ contained in the waste liquid, further, the Cd The 2+ ion concentration detector is an online detector.
  • a chemical bath deposition apparatus as described above, wherein, preferably, further comprising control means for controlling said second adjustment based on conductivity measured by said conductivity detector and/or Cd 2+ ion concentration detector The valve is opened and closed.
  • the cadmium sulfide deposition tank further includes a pH detecting device for on-line monitoring and adjusting the pH of the solution in the chemical liquid storage tank.
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising a heat retention device disposed on an outer wall of the chemical liquid storage tank for maintaining a temperature in the chemical liquid storage tank at a set temperature interval .
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising a first power pump for pumping the waste liquid in the cadmium sulfide deposition tank into the waste liquid storage tank.
  • the chemical bath deposition apparatus as described above, wherein, preferably, further comprising a second power pump, a third power pump, a fourth power pump, and a fifth power pump, wherein the second power pump is used to discharge the waste liquid tank
  • the waste liquid is pumped into the refrigeration device;
  • the third power pump is used to pump the waste liquid in the refrigeration device into the filter device;
  • the fourth power pump is used to pump the chemical liquid in the filter device into the chemical liquid storage
  • a fifth power pump for pumping the liquid in the chemical liquid storage tank into the cadmium sulfide deposition tank.
  • the present disclosure also provides a deposition method using the chemical bath deposition apparatus of the present disclosure, which comprises:
  • the waste liquid in the cadmium sulfide deposition tank is introduced into the waste liquid storage tank for storage, and then the waste liquid in the waste liquid storage tank is introduced into the refrigeration device for cooling;
  • the filtered waste liquid is passed into a chemical liquid storage tank for storage;
  • a chemical liquid formed by the waste liquid stored in the chemical liquid storage tank and the added chemical raw material is introduced into the cadmium sulfide deposition tank for cadmium sulfide deposition.
  • the waste liquid in the cadmium sulfide deposition tank is introduced into the waste liquid storage tank for storage, and the waste liquid stored in the waste liquid storage tank is cooled to 20 to 30 ° C. .
  • the step of introducing the waste liquid in the waste liquid storage tank into the refrigeration unit for cooling the temperature of the cooled waste liquid is 15 ° C or less.
  • the deposition method as described above, preferably, before the chemical feedstock is added to the chemical liquid storage tank by the supplemental feeding device, the deposition method further comprises:
  • the content is obtained by adding the concentration of the chemical raw material according to the content of the cadmium particles.
  • the chemical liquid stored in the chemical liquid storage tank and the chemical raw material to be added constitute a cadmium compound, a sulfur compound, a soluble basic compound and/or an amino compound.
  • the cadmium compound comprising a mixture of any one or more of cadmium sulfate, cadmium chloride, cadmium acetate, and cadmium nitrate;
  • the sulfur compound is any one or a mixture of thiourea and sodium sulfite
  • the soluble basic compound is a mixture of any one or more of KOH, NaOH and ammonia water;
  • the amino compound is a mixture of any one or a combination of ammonia water, ammonium acetate, and urea.
  • the deposition method as described above preferably, before the introduction of the waste liquid in the cadmium sulfide deposition tank into the waste liquid storage tank, further comprises:
  • a chemical deposition solution is sequentially added to the cadmium sulfide deposition tank, and the chemical deposition solution may include a cadmium compound, an OH - compound, an NH 4 + source, and/or a sulfur compound.
  • the cadmium compound may be any one of cadmium sulfate, cadmium chloride, cadmium acetate and cadmium nitrate or any mixture thereof;
  • the OH - compound may be any one of KOH, NaOH and ammonia water or any mixture thereof.
  • the NH 4+ source may be any one of ammonia water, ammonium acetate and urea or a mixture thereof.
  • the sulfur compound may be any one of thiourea and sodium sulfite or any mixture thereof.
  • the chemical deposition solution may further include an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • the specific order of the materials is cadmium, an ammonium source, a substrate to be deposited on the surface, and a sulfide.
  • a chemical reaction begins to occur, that is, cadmium sulfide particles are formed. Thereby, a cadmium sulfide layer can be deposited on the substrate.
  • the chemical deposition solution comprises cadmium sulfate, ammonia water, thiourea, KOH.
  • the waste liquid is a cadmium sulfide waste liquid, and includes cadmium sulfate, cadmium sulfide, ammonia water, and thiourea.
  • the waste liquid comprises cadmium sulfate, cadmium sulfide, urea, ammonia water, and thiourea.
  • the second regulating valve is controlled to be closed, thereby stopping the addition of chemicals to the chemical liquid in the chemical liquid storage tank.
  • the conductivity measures the overall concentration of the cadmium compound, the NH 4 + source, and the sulfur compound plasma in the chemical liquid in the chemical liquid storage tank.
  • Ionic conductivity and concentration in the liquid directly related to, for example, the concentration of SO 4 ions and Cd.
  • the relationship curve is obtained by externally detecting the impurity concentration and conductivity data in the waste liquid. Skilled in the art will appreciate that the effluent curve is cadmium compounds, the whole curve of the concentration of NH 4 + ions and the source of sulfur compounds and the measured conductivity. Further, the amount of chemicals that need to be added is known.
  • the electrical conductivity is directly related to the ion concentration in the liquid, and the conductivity concentration of the cadmium sulfate, ammonia water, and thiourea in the chemical liquid in the chemical liquid storage tank is measured by a conductivity detector. For example, the concentration of Cd 2+ and SO 4 2- ions.
  • the relationship between conductivity and concentration needs to be characterized.
  • a relationship curve is obtained, and then the concentration of the chemical raw material to be added is known.
  • the waste liquid recovery system, the chemical bath deposition apparatus and the deposition method thereof provided by the present disclosure by refrigerating and filtering the waste liquid, supplementing the chemical raw materials, thereby obtaining a chemical liquid having the same concentration as the original liquid, compared with the prior art, The recycling of waste liquid is greatly improved, and the production cost is reduced.
  • FIG. 1 is a schematic structural diagram of a waste liquid recovery system according to some embodiments of the present disclosure
  • FIG. 2 is a schematic structural view of a chemical bath deposition apparatus according to some embodiments of the present disclosure
  • FIG. 3 is a schematic structural view of a chemical bath deposition apparatus provided by an embodiment of the present disclosure.
  • FIG. 4 is a flow chart of a method for depositing a cadmium sulfide layer according to an embodiment of the present disclosure
  • FIG. 5 is a flow chart of a method for depositing a cadmium sulfide layer according to an embodiment of the present disclosure
  • FIG. 6 is a flowchart of a waste liquid recovery method according to an embodiment of the present disclosure.
  • the deposition technique of the CdS film layer is mainly based on a chemical water bath deposition method, namely Chemical Bath Deposition (CBD).
  • CBD Chemical Bath Deposition
  • a CdS film layer is deposited on the substrate of the absorption layer such as CIGS, CIS, GaAs as a buffer layer of the photovoltaic cell, and is absorbed in a photovoltaic cell such as CIGS, CIS, GaAs or the like.
  • the layer forms a pn junction, thereby completing the photoelectric efficient conversion process.
  • the CdS deposition process mainly includes pre-mixing of chemical deposition liquid (including cadmium compound, OH - compound and NH 4 + source), addition of sulfide (such as thiourea), heating by chemical deposition liquid, growth of CdS on the substrate, removal of the substrate, and discharge of waste.
  • chemical deposition liquid including cadmium compound, OH - compound and NH 4 + source
  • sulfide such as thiourea
  • the NH 4 + source may be ammonia water, which provides an ammonia source for the formation of Cd(NH 4 ) 2 + buffer ions for CdS deposition.
  • the present disclosure provides a chemical bath deposition apparatus, method and system. After purifying the waste liquid and supplementing the corresponding chemical raw materials by an appropriate method, it can theoretically still be used as a chemical liquid deposited by CdS for subsequent substrates.
  • FIG. 1 is a schematic structural diagram of a waste liquid recovery system according to some embodiments of the present disclosure.
  • the waste liquid recovery system 200 includes a waste liquid storage tank 202, a refrigeration unit 203, a filtration unit 204, and a chemical liquid storage tank 205.
  • the waste liquid storage tank 202 is used for storing the waste liquid generated by the deposition of the cadmium sulfide deposition tank
  • the refrigeration unit 203 is used for cooling the stored waste liquid B
  • the refrigeration unit 203 is used for filtering the waste liquid obtained by the refrigeration
  • the chemical liquid storage tank 205 is used for Store the filtered waste liquid.
  • the liquid inlet of the waste liquid storage tank 202 is connected to the liquid outlet of the cadmium sulfide reaction tank; the liquid outlet of the waste liquid storage tank 202 is connected to the liquid inlet of the refrigeration unit 203; the liquid outlet of the refrigeration unit 203 is The liquid inlet of the filtering device 204 is connected and the liquid outlet of the filtering device 204 is connected to the waste liquid inlet of the chemical liquid storage tank 205.
  • the chemical liquid in the chemical bath deposition tank is introduced into the waste liquid storage tank 202 as waste liquid A (not shown).
  • waste liquid A is pumped into the waste liquid storage tank by the first power pump.
  • the temperature is lowered, thereby forming the cooled waste liquid B.
  • the composition of the waste liquid B is substantially the same as that of the waste liquid A, but the cadmium sulfide particles in the waste liquid B are slightly increased due to the temperature decrease.
  • the waste liquid is cooled to form waste liquid C.
  • the composition of the waste liquid C is substantially the same as that of the waste liquid B, but more precipitation is generated due to the cooling, such as cadmium sulfide particles, cadmium compounds, and the like.
  • the waste liquid recovery system 200 preferably further includes a cooling device, wherein the cooling liquid in the cooling device is preferably water, and the cooling device is coated on the outer wall of the waste liquid storage tank for discharging the waste liquid in the waste liquid storage tank 202.
  • the temperature is lowered, the rate of formation of CdS is initially lowered, and the temperature of the cooling device in the waste liquid storage tank 202 is lowered.
  • the solution in the waste liquid storage tank is cooled from 50 to 70 ° C at the time of inlet to 20 to 30 ° C, preferably 22 ° C.
  • the waste liquid from the waste liquid storage tank will be pumped into the refrigeration unit 203 to further cool down, and the temperature of the waste liquid in the refrigeration unit 203 is reduced to below 15 ° C, such as 5 ° C, 8 ° C, so that the formation of CdS enters a stagnant state. .
  • the solubility of cadmium sulfide in the waste liquid gradually decreases, and the cadmium sulfide in the waste liquid gradually precipitates as cadmium sulfide particles (particles).
  • the specific structure of the above refrigeration device may be various, and may be a physical refrigeration device or a chemical refrigeration device, which will not be repeated here.
  • the waste liquid C cooled by the cooling device will enter a filtering device 204 equipped with a filter element (about 0.02 um) to filter the CdS particles in the waste liquid, and also filter out the separated chemical raw materials: cadmium sulfate and thiourea.
  • the outer wall of the chemical liquid storage tank 205 is preferably provided with a cryogenic maintenance device for maintaining the temperature in the chemical liquid storage tank at a set temperature interval to ensure that the solution is kept at a low temperature.
  • the waste liquid recovery system refrigerates and filters the waste liquid, and supplements the chemical raw material to obtain a chemical liquid having the same concentration as the raw liquid. Compared with the prior art, the waste liquid is greatly recovered and reduced. Production costs.
  • FIG. 2 is a schematic structural diagram of a chemical bath deposition apparatus according to some embodiments of the present disclosure.
  • a chemical bath deposition apparatus 300 including a cadmium sulfide deposition tank 301 , a waste liquid storage tank 202 , The refrigeration device 203, the filtration device 204, the chemical liquid storage tank 205, and the supplementary drug supply device 306.
  • the waste liquid storage tank 202, the refrigeration unit 203, the filtration unit 204, and the chemical liquid storage tank 205 constitute the waste liquid recovery system 200.
  • the above cadmium sulfide deposition tank 301 is used for performing cadmium sulfide deposition.
  • the waste liquid storage tank 202 is configured to store the waste liquid generated by depositing the cadmium sulfide,
  • the refrigeration device 203 is configured to cool the waste liquid.
  • the filtering device 204 is configured to filter the waste liquid obtained by the cooling,
  • the chemical liquid storage tank 205 is configured to store the filtered waste liquid
  • the supplementary medicine supply device 306 is configured to add chemicals to the chemical liquid storage tank
  • the liquid inlet of the waste liquid storage tank 202 is connected to the liquid outlet of the chemical bath deposition tank 301;
  • the liquid outlet of the waste liquid storage tank 202 is connected to the liquid inlet of the refrigeration device 203;
  • the liquid outlet of the refrigeration device 203 is connected to the liquid inlet of the filtering device 204;
  • the liquid outlet of the filtering device 204 is connected to the liquid inlet of the chemical liquid storage tank 205;
  • the liquid outlet of the chemical liquid storage tank 205 is connected to the liquid inlet of the cadmium sulfide deposition tank 301.
  • the liquid inlet of the waste liquid storage tank 202 is connected to the liquid outlet of the cadmium sulfide deposition tank 301, and the liquid outlet of the waste liquid storage tank 202 is connected to the liquid inlet of the refrigeration unit 203, and the liquid outlet and the filtering device of the refrigeration unit 203
  • the liquid inlet of the 204 is connected, the liquid outlet of the filtering device 204 is connected to the liquid inlet of the chemical liquid storage tank 205, and the supplementary medicine supply device 306 is used for feeding the chemical liquid storage tank, and the chemical liquid storage tank 205 is discharged.
  • the liquid port is connected to the liquid inlet of the cadmium sulfide deposition tank 301.
  • a chemical deposition liquid may be added to the cadmium sulfide deposition tank 301, and the chemical deposition liquid may include a cadmium compound, an OH - compound, a NH 4+ source, and/or a sulfur compound.
  • the specific step of adding the chemical deposition liquid to the cadmium sulfide deposition tank 301 is: first adding a mixture of a cadmium compound, an OH - compound, and a NH 4+ source, and heating the mixture to 50 to 70 ° C, preferably 60 ° C, then add the surface of the substrate to be treated, and then add sulfide;
  • the cadmium compound may be any one of cadmium sulfate, cadmium chloride, cadmium acetate and cadmium nitrate or any mixture thereof;
  • the OH-compound may be any one of KOH, NaOH and ammonia water or any mixture thereof.
  • the NH 4 + source may be any one of ammonia water, ammonium acetate, and urea, or a mixture thereof.
  • the sulfur compound may be any one of thiourea and sodium sulfite or any mixture thereof.
  • the chemical deposition liquid may further include an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • the specific order of the materials is cadmium, an ammonium source, a substrate to be deposited on the surface, and a sulfide.
  • a chemical reaction begins to occur, that is, cadmium sulfide particles are formed. Thereby, a cadmium sulfide layer can be deposited on the substrate.
  • the chemical deposition solution comprises cadmium sulfate, ammonia water, thiourea.
  • the waste liquid A generated after the deposition of cadmium sulfide flows out from the cadmium sulfide deposition tank 301 into the waste liquid storage tank 202, and the waste liquid A contains cadmium sulfide particles which are not deposited on the substrate and excess cadmium compounds (such as cadmium sulfate) formed by the reaction. , an excess of NH 4 + source, an excess of sulfur compounds, and the like.
  • the chemical deposition solution may be a cadmium sulfate solution system comprising a solution of cadmium sulfate, ammonia water, and thiourea, the effluent A comprising cadmium sulfate, cadmium sulfide particles, aqueous ammonia, and thiourea.
  • the chemical deposition solution may be a cadmium chloride solution system comprising a solution of cadmium chloride, ammonia, and thiourea.
  • the waste liquid A contains cadmium chloride, cadmium sulfide particles, ammonia water, and thiourea.
  • the chemical deposition solution may be a cadmium acetate solution system comprising a solution of cadmium acetate, ammonia water, and thiourea, whereby the waste liquid A comprises cadmium acetate, cadmium sulfide particles, ammonia water, and thiourea.
  • the temperature is lowered, thereby forming the cooled waste liquid B.
  • the composition of the waste liquid B is substantially the same as that of the waste liquid A, but the cadmium sulfide particles in the waste liquid B are slightly increased due to the temperature decrease.
  • the waste liquid is cooled to form waste liquid C.
  • the composition of the waste liquid C is substantially the same as that of the waste liquid B, but more precipitation is generated due to the cooling, such as cadmium sulfide particles, cadmium compounds, and the like.
  • the chemical to be added may be a cadmium compound, a NH 4 + source and/or a sulfur compound, in particular cadmium sulfate, ammonia water and/or thiourea.
  • the chemical liquid in the chemical bath deposition tank is introduced into the waste liquid storage tank 202 as a waste liquid.
  • the waste liquid in the cadmium sulfide deposition tank 301 is pumped through the first power pump. In the waste storage tank 202.
  • the chemical bath deposition apparatus may further include a second power pump, a third power pump, a fourth power pump, and a fifth power pump, wherein the second power pump is used for The waste liquid in the waste storage tank 202 is pumped into the refrigeration device 203; the third power pump is used to pump the waste liquid in the refrigeration device 203 into the filter device; and the fourth power pump is used in the filter device The chemical liquid is pumped into the chemical liquid storage tank; the fifth power pump is used to pump the liquid in the chemical liquid storage tank into the cadmium sulfide deposition tank 301.
  • the chemical bath deposition apparatus preferably further includes a cooling device (not shown), and the cooling liquid in the cooling device is preferably water, and the cooling device is coated on the outer wall of the waste storage tank 202 for storing the waste liquid
  • the waste liquid in the tank is cooled, the production rate of CdS is initially reduced, and the cooling device in the waste liquid storage tank is cooled, and the solution in the waste liquid storage tank is cooled from 50 to 70 ° C at the time of inlet to 20 to 30 ° C, preferably It is 22 °C.
  • the waste liquid from the waste liquid storage tank 202 will be pumped into the refrigeration unit 203 to further cool down, and the temperature of the waste liquid in the refrigeration unit 203 is reduced to below 15 ° C, such as 5 ° C, 8 ° C, so that the formation of CdS is stagnant. status.
  • the solubility of cadmium sulfide in the waste liquid gradually decreases, and the cadmium sulfide in the waste liquid gradually precipitates as cadmium sulfide particles (particles).
  • the specific structure of the refrigerating device 203 may be various, and may be a physical refrigerating device 203 or a chemical refrigerating device 203, and will not be further described herein.
  • the waste liquid cooled and cooled by the refrigerating device 203 will enter a filtering device equipped with a filter element (about 0.02 um) to filter the CdS particles in the waste liquid, and also filter out the separated chemical raw materials: cadmium sulfate and thiourea.
  • the outer wall of the chemical liquid storage tank is preferably provided with a cryogenic maintenance device for maintaining the temperature in the chemical liquid storage tank at a set temperature interval to ensure that the solution is kept at a low temperature.
  • the chemical supply tank may be supplemented with a chemical supplementation device depending on the situation.
  • the chemical to be added may be a cadmium compound, a NH 4 + source, and/or a sulfur compound.
  • a first regulating valve is disposed between the liquid outlet of the chemical liquid storage tank and the liquid inlet of the cadmium sulfide deposition tank 301; and a liquid regulating port of the chemical liquid storage tank is disposed between the liquid inlet of the chemical liquid storage tank and the liquid outlet of the supplementary medicine supply device.
  • a second regulating valve is disposed between the opening and closing of the valve, the liquid circulation between the groove and the groove is controlled.
  • a third regulating valve may be disposed between the liquid inlet of the waste liquid storage tank 202 and the liquid outlet of the cadmium sulfide deposition tank 301; the liquid outlet of the waste liquid storage tank 202 is A fourth regulating valve may be disposed between the liquid inlets of the refrigerating device 203; a fifth regulating valve may be disposed between the liquid outlet of the refrigerating device 203 and the liquid inlet of the filtering device; the liquid outlet of the filtering device is A sixth regulating valve may be disposed between the liquid inlets of the chemical liquid storage tank, which is not limited herein.
  • the chemical bath deposition apparatus further includes a conductivity detector disposed in the chemical liquid storage tank for measuring the conductivity of the chemical liquid in the chemical liquid storage tank.
  • the chemical bath deposition apparatus provided further includes control means for controlling the opening and closing of the second regulating valve according to the conductivity measured by the conductivity detector.
  • the chemical bath deposition apparatus further comprises a Cd 2+ ion detector disposed in the chemical liquid storage tank for measuring the Cd 2+ concentration of the chemical liquid in the chemical liquid storage tank.
  • a conductivity detector is used to measure the overall concentration of cadmium sulfate, ammonia, and thiourea in the chemical solution in the chemical bath.
  • the conductivity is positively correlated with the ion concentration in the liquid, and the relationship between conductivity and concentration needs to be characterized during initial commissioning.
  • the relationship curves were obtained by externally detecting Cd 2+ , SO 4 2- , ammonia water, thiourea concentration and conductivity data in cadmium sulfide waste liquid. Therefore, the concentration of Cd 2+ in the deposition tank is calculated based on the conductivity meter data, and the amount of chemicals to be added is known.
  • the chemical bath deposition further comprises control means for controlling the second adjustment according to the conductivity measured by the conductivity detector or the Cd 2+ ion concentration detector The valve is opened and closed.
  • the chemical bath deposition apparatus further includes a pH detecting device for monitoring and adjusting the pH of the chemical liquid in the chemical liquid storage tank.
  • the chemical bath deposition apparatus as described above, wherein preferably, further comprising a cryogenic maintenance device disposed on an outer wall of the chemical liquid storage tank for maintaining a temperature in the chemical liquid storage tank at a set temperature Interval.
  • the chemical bath deposition apparatus as described above, wherein preferably, further includes a first power pump for pumping the waste liquid in the cadmium sulfide deposition tank 301 into the waste liquid storage tank 202.
  • the chemical bath deposition apparatus as described above, wherein, preferably, further comprising a second power pump, a third power pump, a fourth power pump, and a fifth power pump, wherein the second power pump is used to discharge the waste liquid tank
  • the waste liquid in 202 is pumped into the refrigeration unit 203; the third power pump is used to pump the waste liquid in the refrigeration unit 203 into the filter unit 204; and the fourth power pump is used to pump the chemical liquid in the filter unit 204.
  • And entering the chemical liquid storage tank; and the fifth power pump is for pumping the liquid in the chemical liquid storage tank into the cadmium sulfide deposition tank 301.
  • FIG. 3 is a schematic structural view of a chemical bath deposition apparatus according to another embodiment of the present disclosure.
  • these embodiments provide a cadmium sulfide deposition apparatus 100, including a cadmium sulfide deposition tank 301, and a premixing tank. 101, a sulfide mixing tank 102, a waste storage tank 202, a refrigerating unit 203, a filtering unit 204, a chemical liquid storage tank 205, and a supplementary medicine supply unit 106.
  • the waste liquid storage tank 202, the refrigeration unit 203, the filtration unit 204, and the chemical liquid storage tank 205 constitute the waste liquid recovery system 200 provided by the embodiment of the present disclosure.
  • a chemical deposition liquid may be added to the cadmium sulfide deposition tank 301 through the premixing tank 101 and the thiourea mixing tank 102.
  • the chemical deposition solution is a cadmium sulfate solution system, and comprises a solution prepared by cadmium sulfate, ammonia water and thiourea, wherein the premixing tank contains cadmium sulfate and ammonia water, and the sulfide mixture tank is specifically sulfur.
  • the urea mixing tank is separately added with a cadmium sulfate and ammonia water through a premixing tank and a thiourea mixing tank, and a chemical bath deposition system composed of thiourea, and a chemical deposition liquid after depositing cadmium sulfide enters the waste liquid storage tank 202 as the waste liquid A.
  • the waste liquid A contains cadmium sulfate, cadmium sulfide particles, ammonia water, and thiourea.
  • the chemical liquid in the chemical bath deposition tank is introduced into the waste liquid storage tank 202 as the waste liquid A.
  • the waste liquid AA in the cadmium sulfide deposition tank 301 passes through the first power pump.
  • the waste storage tank 202 Into the waste storage tank 202.
  • the recovery system preferably further comprises a cooling device, wherein the cooling liquid in the cooling device is preferably water, and the cooling device is coated on the outer wall of the waste liquid storage tank 202 for cooling the waste liquid collection process, and initially reducing the CdS. The rate of generation.
  • the composition of the waste liquid BB is substantially the same as that of the waste liquid A1, but as the temperature is lowered, the cadmium sulfide particles in the solution are lowered, and the cadmium sulfide particles are slightly increased.
  • the cooled waste liquid BB enters the refrigeration unit 203 from the waste liquid storage tank 202, and is further cooled.
  • the waste liquid is cooled to form a waste liquid CC.
  • the composition of the waste liquid CC is basically the same as that of the waste liquid BB, but more precipitation is generated due to the refrigeration, such as cadmium sulfide particles, cadmium sulfate, and the like.
  • the waste liquid After exiting the waste liquid storage tank 202, the waste liquid will be pumped into the refrigeration unit 203 to further cool the waste liquid, and the temperature is lowered to below room temperature (5 degrees Celsius), so that the formation of CdS enters a stagnant state.
  • the specific structure of the refrigerating device 203 may be various, and may be a physical refrigerating device 203 or a chemical refrigerating device 203, and will not be further described herein.
  • the cooled waste liquid will enter a filter unit 204 equipped with a filter element (about 0.02 um) to filter the CdS particles in the waste liquid, and also filter out the separated chemical raw materials: cadmium sulfate and thiourea.
  • the outer wall of the chemical liquid storage tank is preferably provided with a cryogenic maintenance device for maintaining the temperature in the chemical liquid storage tank at a set temperature interval to ensure that the solution is kept at a low temperature.
  • the chemical supply tank 205 may be replenished with the chemical supply tank 205 as the case may be.
  • the chemical to be added is cadmium sulfate, ammonia water or the like.
  • the ratio of the cadmium sulfate and ammonia aqueous solution supplied to the chemical liquid storage tank 205 by the supplementary drug supply device 205 and the chemical liquid returned to the cadmium sulfide reaction tank is 15%. 25%, preferably 20%.
  • the chemical bath deposition apparatus may further include a second power pump, a third power pump, a fourth power pump, and a fifth power pump, wherein the second power pump is used for
  • the waste liquid in the waste liquid storage tank 202 is pumped into the refrigeration unit 203; the third power pump is used to pump the waste liquid in the refrigeration unit 203 into the filter unit 204; and the fourth power pump is used in the filter unit 204.
  • the chemical liquid is pumped into the chemical liquid storage tank 205; the fifth power pump is used to pump the liquid in the chemical liquid storage tank 205 into the cadmium sulfide reaction tank 103.
  • a first regulating valve is disposed between the liquid outlet of the chemical liquid storage tank 205 and the liquid inlet of the cadmium sulfide reaction tank 103; the liquid inlet of the chemical liquid storage tank 205 and the liquid outlet of the supplementary medicine supply device 106 A second regulating valve is provided between them. Through the opening and closing of the valve, the liquid circulation between the groove and the groove is controlled.
  • a third regulating valve may be disposed between the liquid inlet of the waste liquid storage tank 202 and the liquid outlet of the cadmium sulfide reaction tank 103; the liquid outlet of the waste liquid storage tank 202 and A fourth regulating valve may be disposed between the liquid inlets of the refrigerating device 203; a fifth regulating valve may be disposed between the liquid outlet of the refrigerating device 203 and the liquid inlet of the filtering device 204; and the liquid discharging of the filtering device 204 A sixth regulating valve may be disposed between the mouth and the liquid inlet of the chemical liquid storage tank 205, which is not limited herein.
  • the recovery system further includes a conductivity detector disposed in the chemical liquid storage tank for measuring the conductivity of the chemical liquid in the chemical liquid storage tank.
  • the chemical bath deposition apparatus further includes control means for controlling the opening and closing of the second regulating valve according to the conductivity measured by the conductivity detector.
  • the recovery system further comprises a Cd 2+ ion detector disposed in the chemical liquid storage tank for measuring the Cd 2+ concentration of the chemical liquid in the chemical liquid storage tank.
  • a conductivity detector is used to measure the overall concentration of cadmium sulfate, ammonia, and thiourea in the chemical solution in the chemical bath.
  • the conductivity is positively correlated with the ion concentration in the liquid, and the relationship between conductivity and concentration needs to be characterized during initial commissioning.
  • the relationship curves were obtained by externally detecting Cd 2+ , SO 4 2- , ammonia water, thiourea concentration and conductivity data in cadmium sulfide waste liquid. Therefore, the concentration of Cd 2+ in the deposition tank is calculated based on the conductivity meter data, and the amount of chemicals to be added is known.
  • an embodiment of the present disclosure further provides a deposition method of a chemical bath deposition apparatus, comprising the following steps:
  • Step S1 The waste liquid in the cadmium sulfide deposition tank 301 is introduced into the waste liquid storage tank 202.
  • the first temperature drop can be first performed in the waste liquid storage tank 202.
  • the waste liquid may contain a cadmium compound, a cadmium sulfide, a NH 4+ source, and a sulfur compound.
  • the waste liquid comprises cadmium sulfate, cadmium sulfide, urea, ammonia water, and thiourea.
  • the cadmium sulfide waste liquid in the cadmium sulfide deposition tank 301 can be introduced into the waste liquid storage tank 202 by the first power pump.
  • step S2 the cooled waste liquid is passed to the refrigeration unit 203 for cooling.
  • the cooled waste liquid is introduced into the refrigeration unit 203 to lower the temperature of the liquid in the refrigeration unit 203 to less than 5 degrees Celsius.
  • step S3 the cooled waste liquid is passed to the filtering device 204 for filtration.
  • the cooled waste liquid is passed to the filtration device 204, and all the cadmium sulfide in the cooled waste liquid is filtered out.
  • the filtered waste liquid may contain cadmium sulfate, thiourea, cadmium sulfide, ammonia water, and thiourea.
  • Step S4 Passing the filtered waste liquid into the chemical liquid storage tank.
  • This tank has a cryogenic maintenance unit to ensure that the solution remains at a low temperature.
  • Step S5 adding a chemical to the chemical liquid in the chemical liquid storage tank by using the supplementary medicine supply device;
  • step S6 the chemical liquid in the chemical liquid storage tank is introduced into the cadmium sulfide deposition tank 301, and the above steps S1 to S6 are cycled for deposition.
  • step S0 may also be included, and the step S0 is specifically:
  • a chemical deposition solution is added to the cadmium sulfide deposition tank 301, and the chemical deposition solution may include a cadmium compound, an OH - compound, an NH 4+ source, and/or a sulfur compound.
  • the cadmium compound may be any one of cadmium sulfate, cadmium chloride, cadmium acetate and cadmium nitrate or any mixture thereof;
  • the OH-compound may be any one of KOH, NaOH and ammonia water or any mixture thereof.
  • the NH 4 + source may be any one of ammonia water, ammonium acetate, and urea, or a mixture thereof.
  • the sulfur compound may be any one of thiourea and sodium sulfite or any mixture thereof.
  • the chemical deposition liquid may further include an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • an auxiliary agent such as urea, ammonia acetate or the like for improving the crystal form of the cadmium sulfide film deposited on the substrate.
  • the specific order of the materials is cadmium, an ammonium source, a substrate to be deposited on the surface, and a sulfide.
  • CdS chemical bath deposition reaction is as follows:
  • the second step Cd(NH 3 ) 4 2+ , OH- and sulfides such as thiourea, sodium sulfite, etc. diffuse to the surface active sites of the substrate, and the sulfides decompose at the active sites on the surface of the substrate:
  • the third step HS - further dissociation to form divalent sulfur ions:
  • the substrate must be added to the chemical solution prior to the addition of the sulfide, and the flow field and temperature of the chemical solution are uniform and stable at all corners of the substrate.
  • the chemicals are discharged to the waste tank, into the waste treatment system, and finally discharged.
  • the chemical liquid contains a large amount of unreacted chemicals, including sulfides (for example). Thiourea), cadmium compounds (such as cadmium sulfate) and NH 4 + sources (such as ammonia), the chemical deposition solution obtained after the cadmium sulfide deposition is completed, that is, waste liquid. Since the above waste liquid is still at the reaction temperature (about 60 degrees Celsius) at the time of discharge, the chemical reaction is continued and is relatively fast, so the concentration of the unreacted chemical is also rapidly lowered and is not easily detected. Since there is no way to quickly control the chemical reaction in the waste liquid, and there is no way to purify and recycle the unreacted chemicals, the waste liquid is usually discharged after the CdS deposition.
  • a chemical reaction begins to occur, that is, cadmium sulfide particles are formed. Thereby, a cadmium sulfide layer can be deposited on the substrate.
  • the chemical deposition solution comprises cadmium sulfate, ammonia water, thiourea.
  • the waste liquid A generated after the deposition of cadmium sulfide flows out from the cadmium sulfide deposition tank 301 into the waste liquid storage tank 202, and the waste liquid A contains cadmium sulfide particles which are not deposited on the substrate and excess cadmium compounds (such as cadmium sulfate) formed by the reaction. , an excess of NH 4 + source, an excess of sulfur compounds, and the like.
  • the chemical deposition solution may be a cadmium sulfate solution system comprising a solution of cadmium sulfate, ammonia water, and thiourea, the effluent A comprising cadmium sulfate, cadmium sulfide particles, aqueous ammonia, and thiourea.
  • the chemical deposition solution may be a cadmium chloride solution system comprising a solution of cadmium chloride, ammonia, and thiourea.
  • the waste liquid A contains cadmium chloride, cadmium sulfide particles, ammonia water, and thiourea.
  • the chemical deposition solution may be a cadmium acetate solution system comprising a solution of cadmium acetate, ammonia water, and thiourea, whereby the waste liquid A comprises cadmium acetate, cadmium sulfide particles, ammonia water, and thiourea.
  • the composition of the waste liquid B is substantially the same as that of the waste liquid A, but the cadmium sulfide particles are slightly increased due to a decrease in temperature.
  • the waste liquid is cooled to form waste liquid C.
  • the composition of the waste liquid C is substantially the same as that of the waste liquid B, but more precipitation is generated due to the cooling, such as cadmium sulfide particles, cadmium compounds, and the like.
  • the chemical to be added may be a cadmium compound, a NH 4 + source and/or a sulfur compound, in particular cadmium sulfate, ammonia water and/or thiourea.
  • the chemical liquid in the chemical bath deposition tank is introduced into the waste liquid storage tank 202 as a waste liquid.
  • the waste liquid in the cadmium sulfide deposition tank 301 is pumped through the first power pump. In the waste storage tank 202.
  • the chemical liquid storage tank is equipped with a precision conductivity monitor for rapid on-line measurement of the conductivity of the solution.
  • the method further comprises:
  • the second regulating valve is controlled to be closed, thereby stopping the addition of the chemical to the chemical liquid in the chemical liquid storage tank.
  • the conductivity measures the overall concentration of ions such as cadmium compounds, NH 4 + sources, and sulfur compounds in the chemical liquid in the chemical liquid storage tank.
  • Ionic conductivity and concentration in the liquid directly related to, for example, the concentration of SO 4 ions and Cd.
  • the relationship curve is obtained by externally detecting the impurity concentration and conductivity data in the waste liquid. Skilled in the art will appreciate that the effluent curve is cadmium compounds, the whole curve of the concentration of NH 4 + ions and the source of sulfur compounds with the measured conductivity. Further, the amount of chemicals that need to be added is known.
  • the electrical conductivity is directly related to the ion concentration in the liquid, and the conductivity concentration of the cadmium sulfate, ammonia water, and thiourea in the chemical liquid in the chemical liquid storage tank is measured by a conductivity detector. For example, the concentration of Cd 2+ and SO 4 2- ions.
  • the relationship between conductivity and concentration needs to be characterized. The relationship curve is obtained by externally detecting the impurity concentration and conductivity data in the waste liquid. Further, the amount of chemicals that need to be added is known.
  • liquid storage tank monitoring chemical concentration of Cd 2+, Cd at a concentration of Cd 2+ monitored chemical liquid storage tank and the initial reaction 2+ ion concentration compared to determine the chemical bath deposition reaction
  • the progress is calculated to calculate the concentration of the chemical raw material in the chemical liquid.
  • monitoring the pH value of the solution in the chemical liquid storage tank comparing the measured pH value with the pH value when the cadmium sulfide deposition tank 301 deposits cadmium sulfide, and further calculating the ammonia water or the alkali solution such as NaOH or the like to be supplemented.
  • the content of KOH The content of KOH.
  • the embodiment of the present disclosure further provides a waste liquid recovery method, including:
  • step S10 the waste liquid in the cadmium sulfide deposition tank 301 is introduced into the waste liquid storage tank 202.
  • the waste liquid can be cooled in the waste liquid storage tank 202.
  • step S20 the cooled waste liquid is passed to the refrigeration unit 203 for cooling.
  • the cooled waste liquid is introduced into the refrigeration unit 203 to lower the temperature of the liquid in the refrigeration unit 203 to 5 degrees Celsius or less.
  • step S30 the cooled waste liquid is passed to the filtering device 204 for filtration.
  • the cooled waste liquid is passed into the filtering device 204, and all the cadmium sulfide in the cooled waste liquid is filtered out, and cadmium sulfate and thiourea are filtered out.
  • Step S40 the filtered waste liquid is introduced into the chemical liquid storage tank.
  • the cadmium sulfide deposition device, the cadmium sulfide layer deposition method, the waste liquid recovery system and the method provided by the embodiments of the present disclosure have significant advantages compared with the existing CBD technology, and are obtained by depositing cadmium sulfide in the cadmium sulfide deposition tank 301.
  • the waste liquid is recycled and reused, and the utilization rate of cadmium compounds and ammonium sources in the chemical deposition liquid is greatly increased, from the original 15% to 65%.
  • This solution is especially beneficial for CBD equipment in the dipping mode, because the soaking method requires a large amount of chemical solution, and the OPEX in the continuous large-scale production process is high.
  • wobbling (CBbling) CBD equipment is expensive, but uses less chemicals. This technical solution will make the immersed CBD equipment with lower cost have an advantage, which will greatly reduce the overall production and operation cost of the CIGS production line.
  • the chemical deposition liquid obtained by the cadmium sulfide deposition tank 301 enters the waste liquid storage tank 202 during the cooling process, and is cooled by the water cooling effect of the waste liquid storage tank 202.
  • the formation of CdS particles (particles) is gradually stagnant.
  • the refrigeration process and cooling process of the refrigeration process can continuously improve the efficiency of chemical liquid purification, which increases the recycling rate of chemical liquids and further increases the chemical utilization rate from 65% to 90%. .

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Abstract

一种废液回收系统（200）、化学浴沉积装置（300）及其沉积方法，废液回收系统（200）包括：废液储存槽（202），用于储存硫化镉沉积槽沉积产生的废液；制冷装置（203），用于对储存的所述废液制冷；过滤装置（204），用于过滤制冷得到的废液；化学液储存槽（205），用于储存过滤后的废液。废液回收系统（200）、化学浴沉积装置（300）及其沉积方法，通过对废液进行制冷、过滤，再补充化学品原料，从而得到与原液浓度相同的化学液，从而显著提高了废液的回收利用，降低了生产成本。

Description

废液回收系统、化学浴沉积装置及其沉积方法
相关申请说明
本申请要求2017年12月20日提交的发明名称为“化学浴沉积装置及其沉积方法、废液回收系统”的中国专利申请No.201711386486.7的优先权，其全文以引用方式并入本文中。
技术领域
本公开涉及太阳能电池的生产技术，尤其涉及一种化学浴沉积装置及其沉积方法、废液回收系统。
背景技术
铜铟镓硒(CIGS)太阳能电池技术作为最先进的薄膜发电技术之一，具有非常广阔的产业化前景。其产品可以基于刚性玻璃的大尺寸基板，在光照强烈的地方建造光伏发电站，也可用于建筑幕墙，光伏建筑一体化(BIPV)等。同时，铜铟镓硒光伏组件也可做成柔性小尺寸产品，其轻柔薄的特性可以使其在便携式发电产品中脱颖而出，如薄膜发电纸，发电背包等。
在生产CIGS光伏组件的过程中，硫化镉(CdS)是迄今为止发现的最佳n结缓冲层材料。CdS层与CIGS层间的界面即为p-n结，用于光吸收后产生的激子的分离，因此CdS层沉积的效果，尤其是致密性对组件的效率影响很大。
然而，本领域仍然需要进一步改善CdS的沉积过程，特别是改善CdS沉积后废液的回收。
发明内容
本公开提供了一种废液回收系统、化学浴沉积装置及其沉积方法， 由此提高废液的回收利用率和/或降低生产成本。
根据本公开，提供了一种废液回收系统，包括：
废液储存槽，用于储存硫化镉沉积槽沉积产生的废液；
制冷装置，用于对储存的所述废液制冷；
过滤装置，用于过滤制冷得到的废液；
化学液储存槽，用于储存过滤后的废液；
所述废液储存槽的进液口与所述硫化镉反应槽的出液口相连；
所述废液储存槽的出液口与所述制冷装置的进液口相连；
所述制冷装置的出液口与所述过滤装置的进液口相连；
所述过滤装置的出液口与所述化学液储存槽的废液进液口相连。
如上所述的废液回收系统，其中，优选地是，所述废液回收系统还包括冷却装置，所述冷却装置包覆在所述废液储存槽的外壁上。
如上所述的废液回收系统，其中，优选地是，所述冷却装置中的冷却液为水。
如上所述的废液回收系统，其中，优选地是，所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口相连，且二者之间设置有第一调节阀。
如上所述的废液回收系统，其中，所述废液回收系统还还包括保温装置，所述保温装置设置在所述化学液储存槽的外壁上，用于保持所述化学液储存槽内的温度处于设定的温度区间。
如上所述的废液回收系统，还包括第一动力泵、第二动力泵、第三动力泵和第四动力泵，其中，第一动力泵用于将化学浴沉积槽中的废液泵入到废液储存槽中，第二动力泵用于将废液储存槽中的废液泵入到制冷装置中；第三动力泵用于将制冷装置中的废液泵入到过滤装置中以及第四动力泵用于将过滤装置中的化学液泵入到化学液储存槽中。
根据本公开，还提供了一种化学浴沉积装置，包括：
硫化镉沉积槽，用于进行硫化镉沉积；
废液储存槽，用于储存所述硫化镉沉积产生的废液；
制冷装置，用于对储存的所述废液制冷；
过滤装置，用于过滤制冷得到的废液；
化学液储存槽，用于储存过滤后的废液；以及
补充供料装置，用于向所述化学液储存槽中补入化学品原料；
所述废液储存槽的进液口与所述硫化镉沉积槽的出液口相连；
所述废液储存槽的出液口与所述制冷装置的进液口相连；
所述制冷装置的出液口与所述过滤装置的进液口相连；
所述过滤装置的出液口与所述化学液储存槽的废液进液口相连；
所述补充供药装置的出液口与所述化学液储存槽的原料进液口相连；
所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口相连。
如上所述的化学浴沉积装置，其中，优选的是，还包括：冷却装置，包覆在所述废液储存槽的外壁上。
如上所述的化学浴沉积装置，其中，优选的是，所述冷却装置中的冷却液为水。
如上所述的化学浴沉积装置，其中，优选的是，所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口之间设置有第一调节阀；
所述化学液储存槽的进液口与所述补充供药装置的出液口之间设置有第二调节阀。
如上所述的化学浴沉积装置，其中，优选的是，还包括电导率检测仪，设置在所述化学液储存槽中，用于测量所述化学液储存槽中的废液的电导率。
如上所述的化学浴沉积装置，其中，优选的是还包括离子检测仪，设置在所述化学液储存槽中，用于测量废液中所含的Cd 2+的浓度，进一步地，上述Cd 2+离子浓度检测仪为在线检测仪。
如上所述的化学浴沉积装置，其中，优选的是，还包括控制装置，用于根据所述电导率检测仪和/或Cd 2+离子浓度检测仪测量得到的电导率控制所述第二调节阀的启闭。
优选的是，硫化镉沉积槽还包括pH检测装置，用于在线监测并调节化学液储存槽中的溶液的pH值。
如上所述的化学浴沉积装置，其中，优选的是，还包括保温装置，设置在所述化学液储存槽的外壁上，用于保持所述化学液储存槽内的温 度处于设定的温度区间。
如上所述的化学浴沉积装置，其中，优选的是，还包括第一动力泵，用于将硫化镉沉积槽中的废液泵入到废液储存槽中。
如上所述的化学浴沉积装置，其中，优选的是，还包括第二动力泵、第三动力泵、第四动力泵和第五动力泵，其中，第二动力泵用于将废液储存槽中的废液泵入到制冷装置中；第三动力泵用于将制冷装置中的废液泵入到过滤装置中；第四动力泵用于将过滤装置中的化学液泵入到化学液储存槽中；以及第五动力泵用于将化学液储存槽中的液体泵入到硫化镉沉积槽中。
本公开还提供了一种使用本公开的化学浴沉积装置的沉积方法，其中，包括：
将硫化镉沉积槽中的废液通入到废液储存槽中储存，之后将废液储存槽中的废液通入到制冷装置中进行制冷；
将所述制冷后的废液通入到过滤装置中进行过滤；
将所述过滤后的废液通入到化学液储存槽中储存；
利用补充供料装置向所述化学液储存槽中加入化学品原料；
将所述化学液储存槽中储存的废液和加入的化学品原料形成的化学液通入到所述硫化镉沉积槽中进行硫化镉沉积。
如上所述的沉积方法，优选地，所述将硫化镉沉积槽中的废液通入到废液储存槽中储存的步骤中，对废液储存槽中储存的废液降温至20～30℃。
如上所述的沉积方法，优选地，所述将废液储存槽中的废液通入到制冷装置中进行制冷的步骤中，所述制冷后的废液温度小于等于15℃。
如上所述的沉积方法，优选地，利用补充供料装置向所述化学液储存槽中加入化学品原料之前，所述沉积方法还包括：
监测化学液储存槽中储存的废液的电导率和/或监测化学液储存槽中废液的Cd 2+浓度，根据测得的电导率和/或Cd 2+浓度计算废液中镉粒子的含量，根据所述镉粒子的含量得到加入化学品原料的浓度。
如上所述的沉积方法，优选地，所述化学液储存槽中储存的废液和加入的化学品原料形成的化学液包含镉化合物、硫化合物、可溶性碱性 化合物和/或氨基化合物。
如上所述的沉积方法，所述镉化合物包括硫酸镉、氯化镉、醋酸镉和硝酸镉中的任意一种或几种的混合物；
所述硫化合物为硫脲和亚硫酸钠中的任意一种或二者的混合物；
所述可溶性碱性化合物为KOH、NaOH和氨水中的任意一种或几种的混合物；
所述氨基化合物为氨水、乙酸铵和尿素中的任意一种或几种的混合物。
如上所述的沉积方法，优选的，在上述将硫化镉沉积槽中的废液通入到废液储存槽中之前还包括：
在硫化镉沉积槽中依次加入化学沉积液，所述化学沉积液可以包含镉化合物、OH -化合物、NH 4 +源和/或硫化合物，
优选地，所述镉化合物可以为硫酸镉、氯化镉、醋酸镉和硝酸镉中的任意一种或其任意混合物；
优选地，所述OH -化合物可以为KOH、NaOH和氨水中的任意一种或者其任意混合物。
优选地，所述NH 4+源可以为氨水，乙酸铵和尿素中的任意一种或者其混合物。
优选地，所述硫化合物可以为硫脲和亚硫酸钠中的任意一种或其任意混合物。
优选的，化学沉积液中还可以包括助剂，如尿素、乙酸氨等，以用于改善沉积于基板上的硫化镉膜层的晶型。
优选地，在硫化镉沉积槽中加入化学沉积液时，物料的具体加入次序依次为镉化物，铵源，表面待沉积的基板，硫化物。
在硫化镉沉积槽中加入化学沉积液后，便开始发生化学反应，即有硫化镉粒子生成。由此可以在基板上沉积硫化镉层。
优选地，所述化学沉积液包括硫酸镉，氨水，硫脲，KOH。
优选地，所述废液为硫化镉废液，包含硫酸镉，硫化镉离子，氨水，硫脲。
优选地，所述废液包含硫酸镉、硫化镉、尿素、氨水以及硫脲。
如上所述的沉积方法，其中，优选的是，将所述化学液储存槽中的化学液通入到所述硫化镉沉积槽中之前，所述方法还包括：
监测化学液储存槽中化学液的电导率，根据测得的电导率数据计算化学液中镉粒子的含量，根据镉离子的含量，从而判断出化学浴沉积的反应进度，从而得到化学液中的化学品原料的浓度；
当所述化学液中的各化学品原料的浓度(优选Cd 2+的浓度)达到设定值时，控制第二调节阀关闭，从而停止向化学液储存槽中的化学液加入化学品。
具体地，电导率测量化学液储存槽中化学液中的镉化合物，NH 4 +源和硫化合物等离子的整体浓度。电导率与液体中的离子浓度有直接关系，例如Cd和SO 4离子的浓度。在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测废液中杂质浓度和电导率数据，得到关系曲线。本领域内的技术人员将会理解，该关系曲线是废液中镉化合物，NH 4 +源和硫化合物等离子的整体浓度与测得的电导率的关系曲线。进而得知需要添加的化学品量。
具体地，电导率与液体中的离子浓度有直接关系，采用电导率检测仪测量化学液储存槽中化学液中的硫酸镉，氨水和硫脲的整体浓度。例如Cd 2+和SO 4 2-离子的浓度。在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测废液中杂质浓度和电导率数据，得到关系曲线，进而得知需要添加的化学品原料浓度。
本公开提供的废液回收系统、化学浴沉积装置及其沉积方法，通过对废液进行制冷、过滤，在补充化学品原料，从而得到与原液浓度相同的化学液，相比于现有技术，大大地提高了废液的回收利用，降低了生产成本。
附图说明
图1为本公开一些实施例提供的废液回收系统的结构示意图；
图2为本公开一些实施例提供的化学浴沉积装置的结构示意图；
图3本公开的一个具体实施例提供的化学浴沉积装置的结构示意图；
图4为本公开实施例提供的硫化镉层沉积方法的流程图；
图5为本公开实施例提供的硫化镉层沉积方法的流程图；
图6为本公开实施例提供的废液回收方法的流程图。
具体实施方式
下面详细描述本公开的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的，仅用于解释本公开，而不能解释为对本公开的限制。
CdS膜层的沉积技术主要基于化学水浴沉积方法，即Chemical Bath Deposition(CBD)。在制备光伏电池芯片如CIGS，CIS，GaAs等类型的光伏电池时，在依次设置有背电极，吸收层如CIGS，CIS，GaAs的基板上沉积CdS膜层作为光伏电池的缓冲层，以与吸收层形成p-n结，进而完成光电高效转换过程。
CdS沉积过程主要包括化学沉积液(包含镉化合物、OH -化合物和NH 4 +源等)预混合，硫化物(例如硫脲)加入，化学沉积液加热，CdS在基板生长，取出基板，排放废液等几大步骤。NH 4 +源可以是氨水，氨水为CdS沉积提供了生成Cd(NH 4) 2 +缓冲离子的氨源。
由于废液中仍有超过80％的化学原料溶解在溶液中，且未发生反应，全部排放的废液会造成很大浪费，同时导致后期废水处理系统负担过重。最终排放至环境中的废物也相当多，对环境产生一定压力。
为进一步解决CBD法沉积CdS缓冲层过程中废液的回收利用问题。本公开提供了一种化学浴沉积装置、方法、系统，在采用适当方法，将废液提纯并补加相应化学原料后，理论上仍可作为CdS沉积的化学液，供后续的基板使用。
图1为本公开一些实施例提供的废液回收系统的结构示意图。如图1所示，废液回收系统200包括：废液储存槽202、制冷装置203、过滤装置204和化学液储存槽205。废液储存槽202用于储存硫化镉沉积槽沉积产生的废液，制冷装置203用于对储存的废液B制冷；制冷装置203 用于过滤制冷得到的废液并且化学液储存槽205用于储存过滤后的废液。所述废液储存槽202的进液口与硫化镉反应槽的出液口相连；废液储存槽202的出液口与制冷装置203的进液口相连；制冷装置203的出液口与所述过滤装置204的进液口相连并且所述过滤装置204的出液口与化学液储存槽205的废液进液口相连。
具体而言，在硫化镉沉积化学反应完全并取出基板后，化学浴沉积槽中的化学液将作为废液A(图中未示出)引入到废液储存槽202中。优选地，废液A通过第一动力泵泵入到废液储存槽中。
废液A进入废液储存槽202后温度降低，由此形成降温的废液B。废液B的组成与废液A基本一致，但是由于温度降低，废液B中的硫化镉粒子稍微增加。
降温后的废液B由制冷装置203的进液口进入制冷装置202中，进一步进行制冷。废液经过制冷后形成废液C。废液C的组成与废液B基本一致，但是由于进行制冷而使得产生更多的沉淀物，如硫化镉粒子、镉化合物等。
该废液回收系统200优选地还包括冷却装置，冷却装置中的冷却液优选为水，该冷却装置包覆在废液储存槽的外壁上，用于对废液存储槽202中的废液进行降温，初步降低CdS的生成速率，经废液存储槽202中的冷却装置的降温，废液存储槽中的溶液由进口时的50～70℃降温至20～30℃，优选为22℃。
从废液储存槽出来后的废液将会被泵入到制冷装置203进一步降温，制冷装置203中的废液温度降至15℃以下，如5℃，8℃，使CdS的生成进入停滞状态。随着温度的降低，废液中的硫化镉的溶解度逐步降低，废液中的硫化镉逐步以硫化镉粒子(颗粒)的形式析出。
上述制冷装置的具体结构可以有多种，可以为物理制冷装置也可以为化学制冷装置，这里就不再一一赘述。
经制冷装置降温冷却后的废液C将进入装有滤芯(约0.02um)的过滤装置204，将废液中的CdS颗粒过滤干净，同时也过滤析出的化学品原料：硫酸镉和硫脲。
经过过滤装置204后，CdS等固体粒子被滤出。此提纯后的化学液将会被泵入至化学液储存槽205。该化学液储存槽205的外壁上优选地设置有低温维护装置，用于保持化学液储存槽内的温度处于设定的温度区间，确保溶液保持在低温状态。
由此，废液回收系统通过对废液进行制冷、过滤，在补充化学品原料，从而得到与原液浓度相同的化学液，相比于现有技术，大大地提高了废液的回收利用，降低了生产成本。
图2为本公开一些实施例提供的化学浴沉积装置的结构示意图，如图1所示，这些实施例提供了一种化学浴沉积装置300，包括硫化镉沉积槽301、废液储存槽202、制冷装置203、过滤装置204、化学液储存槽205和补充供药装置306。如上所述，废液储存槽202、制冷装置203、过滤装置204和化学液储存槽205构成了废液回收系统200。
上述硫化镉沉积槽301用于进行硫化镉沉积，
上述废液储存槽202用于储存所述沉积硫化镉产生的所述废液，
上述制冷装置203用于对所述废液制冷，
上述过滤装置204用于过滤所述制冷得到的所述废液，
上述化学液储存槽205用于储存所述过滤后的所述废液，以及
上述补充供药装置306，用于向所述化学液储存槽补入化学品；
上述废液储存槽202的进液口与所述化学浴沉积槽301的出液口相连；
上述废液储存槽202的出液口与所述制冷装置203的进液口相连；
上述制冷装置203的出液口与所述过滤装置204的进液口相连；
上述过滤装置204的出液口与所述化学液储存槽205的进液口相连；并且
上述化学液储存槽205的出液口与硫化镉沉积槽301的进液口相连。
废液储存槽202的进液口与硫化镉沉积槽301的出液口相连，废液储存槽202的出液口与制冷装置203的进液口相连，制冷装置203的出液口与过滤装置204的进液口相连，过滤装置204的出液口与化学液储存槽205的进液口相连，补充供药装置306用于向化学液储存槽补入化学品，化学液储存槽205的出液口与硫化镉沉积槽301的进液口相连。
参照图2，可以在硫化镉沉积槽301中加入化学沉积液，化学沉积液可以包含镉化合物、OH -化合物、NH 4+源和/或硫化合物，
优选地，在向硫化镉沉积槽301中加入化学沉积液时的具体步骤为：先加入镉化合物、OH -化合物、NH 4+源组成的混合物，加热所述混合物至50～70℃，优选为60℃，再加入表面待处理的基板，然后加入硫化物；
优选地，所述镉化合物可以为硫酸镉、氯化镉、醋酸镉和硝酸镉中的任意一种或其任意混合物；
优选地，所述OH-化合物可以为KOH、NaOH和氨水中的任意一种或者其任意混合物。
优选地，所述NH 4 +源可以为氨水、乙酸铵和尿素中的任意一种或者其混合物。
优选地，所述硫化合物可以为硫脲和亚硫酸钠中的任意一种或其任意混合物。
优选地，化学沉积液中还可以包括助剂，如尿素、乙酸氨等，以用于改善沉积于基板上的硫化镉膜层的晶型。
优选地，在硫化镉沉积槽301中加入化学沉积液时，物料的具体加入次序依次为镉化物，铵源，表面待沉积的基板，硫化物。
在硫化镉沉积槽301中加入化学沉积液后，便开始发生化学反应，即有硫化镉粒子生成。由此可以在基板上沉积硫化镉层。
优选地，所述化学沉积液包括硫酸镉，氨水，硫脲。
硫化镉沉积后产生的废液A从硫化镉沉积槽301流出到废液储存槽202中，废液A包含反应生成的未沉积于基板上的硫化镉粒子、过量的镉化合物(如硫酸镉)、过量的NH 4 +源、过量的硫化合物等。
在一些实施方式中，化学沉积液可以为硫酸镉溶液体系，包含硫酸镉、氨水和硫脲配置成的溶液，所述废液A包含硫酸镉、硫化镉粒子、氨水以及硫脲。
在一些实施方式中，化学沉积液可以为氯化镉溶液体系，包含氯化镉、氨水和硫脲配置成的溶液。所述废液A包含氯化镉、硫化镉粒子、氨水以及硫脲。
在一些实施方式中，优选地，化学沉积液可以为醋酸镉溶液体系， 包含醋酸镉、氨水和硫脲配置成的溶液，由此废液A包含醋酸镉、硫化镉粒子、氨水以及硫脲。
废液A进入废液储存槽202后温度降低，由此形成降温的废液B。废液B的组成与废液A基本一致，但是由于温度降低，废液B中的硫化镉粒子稍微增加。
降温后的废液B由制冷装置203的进液口进入制冷装置203中，进一步进行制冷。废液经过制冷后形成废液C。废液C的组成与废液B基本一致，但是由于进行制冷而使得产生更多的沉淀物，如硫化镉粒子、镉化合物等。
补入的化学品可以是镉化合物、NH 4 +源和/或硫化合物，特别是硫酸镉、氨水和/或硫脲。
在化学反应完全并取出基板后，化学浴沉积槽中的化学液将作为废液引入到废液储存槽202中，优选地，硫化镉沉积槽301中的废液通过第一动力泵泵入到废液储存槽202中。
本领域技术人员可以理解的是，本公开实施例提供的化学浴沉积装置还可以包括第二动力泵、第三动力泵、第四动力泵和第五动力泵，其中，第二动力泵用于将废液储存槽202中的废液泵入到制冷装置203中；第三动力泵用于将制冷装置203中的废液泵入到过滤装置中；第四动力泵用于将过滤装置中的化学液泵入到化学液储存槽中；第五动力泵用于将化学液储存槽中的液体泵入到硫化镉沉积槽301中。
该化学浴沉积装置优选地还包括冷却装置(图中未示出)，冷却装置中的冷却液优选为水，该冷却装置包覆在废液储存槽202的外壁上，用于对废液存储槽中的废液进行降温，初步降低CdS的生成速率，经废液存储槽中的冷却装置的降温，废液存储槽中的溶液由进口时的50～70℃降温至20～30℃，优选为22℃。
从废液储存槽202出来后的废液将会被泵入到制冷装置203进一步降温，制冷装置203中的废液温度降至15℃以下，如5℃，8℃，使CdS的生成进入停滞状态。随着温度的降低，废液中的硫化镉的溶解度逐步降低，废液中的硫化镉逐步以硫化镉粒子(颗粒)的形式析出。
上述制冷装置203的具体结构可以有多种，可以为物理制冷装置203 也可以为化学制冷装置203，这里就不再一一赘述。
经制冷装置203降温冷却后的废液将进入装有滤芯(约0.02um)的过滤装置，将废液中的CdS颗粒过滤干净，同时也过滤析出的化学品原料：硫酸镉和硫脲。
经过过滤装置后，CdS等固体粒子被滤出。此提纯后的化学液将会被泵入至化学液储存槽。该化学液储存槽的外壁上优选地设置有低温维护装置，用于保持化学液储存槽内的温度处于设定的温度区间，确保溶液保持在低温状态。
可以根据情况，利用补充供药装置向化学液储存槽中补充化学品。补入的化学品可以是镉化合物、NH 4 +源和/或硫化合物等。
优选地，化学液储存槽的出液口与硫化镉沉积槽301的进液口之间设置有第一调节阀；化学液储存槽的进液口与补充供药装置的出液口之间设置有第二调节阀。通过阀的启闭，控制槽与槽之间的液体流通。本领域技术人员还可以理解的是，废液储存槽202的进液口与硫化镉沉积槽301的出液口之间也可以设有第三调节阀；废液储存槽202的出液口与制冷装置203的进液口之间也可以设有第四调节阀；制冷装置203的出液口与过滤装置的进液口之间还可以设有第五调节阀；过滤装置的出液口与化学液储存槽的进液口之间还可以设有第六调节阀，在此不作一一限定。
进一步地，该化学浴沉积装置还包括电导率检测仪，设置在化学液储存槽中，用于测量化学液储存槽中的化学液的电导率，在上述实施例的基础上，本公开实施例提供的化学浴沉积装置还包括控制装置，用于根据所述电导率检测仪测量得到的电导率控制所述第二调节阀的启闭。
进一步地，该化学浴沉积装置还包括Cd 2+离子检测仪，设置在化学液储存槽中，用于测量化学液储存槽中的化学液的Cd 2+浓度。
根据测得的电导率数据计算化学液中离子(例如镉离子、SO 4 2-、OH -和/或NH 4 +)整体的浓度或根据Cd 2+离子检测仪得到的Cd 2+浓度，从而得到化学液中各化学品原料的浓度；当化学品原料的浓度达到设定值时，上述控制装置控制第二调节阀关闭，从而停止向化学液储存槽中的化学液加入化学品。
例如，使用电导率检测仪测量化学液储存槽中化学液中的硫酸镉、氨水和硫脲的整体浓度。电导率与液体中的离子浓度呈正相关关系，在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测硫化镉废液中Cd 2+、SO 4 2-、氨水、硫脲浓度和电导率数据，得到关系曲线。从而根据电导率仪数据计算出沉积槽中的Cd 2+浓度，进而得知需要添加的化学品量。
在一些实施方式中，其中，优选的是，上述的化学浴沉积还包括控制装置，用于根据所述电导率检测仪或Cd 2+离子浓度检测仪测量得到的电导率控制所述第二调节阀的启闭。
在一些实施方式中，其中，优选的是，上述的化学浴沉积装置还包括还包括pH检测装置，用于在线监测并调节化学液储存槽中的化学液的pH值。
如上所述的化学浴沉积装置，其中，优选的是，还包括低温维护装置，设置在所述化学液储存槽的外壁上，用于保持所述化学液储存槽内的温度处于设定的温度区间。
如上所述的化学浴沉积装置，其中，优选的是，还包括第一动力泵，用于将硫化镉沉积槽301中的废液泵入到废液储存槽202中。
如上所述的化学浴沉积装置，其中，优选的是，还包括第二动力泵、第三动力泵、第四动力泵和第五动力泵，其中，第二动力泵用于将废液储存槽202中的废液泵入到制冷装置203中；第三动力泵用于将制冷装置203中的废液泵入到过滤装置204中；第四动力泵用于将过滤装置204中的化学液泵入到化学液储存槽中；以及第五动力泵用于将化学液储存槽中的液体泵入到硫化镉沉积槽301中。
图3为本公开另一些实施例提供的化学浴沉积装置的结构示意图，如图3所示，这些实施例提供了一种硫化镉沉积装置100，包括硫化镉沉积槽301，还包括预混合槽101，硫化物混合槽102，废液储存槽202、制冷装置203、过滤装置204、化学液储存槽205和补充供药装置106。如上所述，废液储存槽202、制冷装置203、过滤装置204和化学液储存槽205构成了本公开实施例提供的废液回收系统200。
参照图3，可以通过预混合槽101和硫脲混合槽102在硫化镉沉积 槽301中加入化学沉积液。
在一些实施方式中，化学沉积液为硫酸镉溶液体系，包含硫酸镉、氨水和硫脲配置成的溶液，上述的预混合槽盛装有硫酸镉和氨水，上述的硫化物混合槽中具体为硫脲混合槽，通过预混合槽与硫脲混合槽分别加入硫酸镉和氨水，硫脲组成的化学浴沉积体系，沉积硫化镉后的化学沉积液作为废液A进入废液储存槽202。并且废液A包含硫酸镉、硫化镉粒子、氨水以及硫脲。
在化学反应完全并取出基板后，化学浴沉积槽中的化学液将作为废液A引入到废液储存槽202中，优选地，硫化镉沉积槽301中的废液AA通过第一动力泵泵入到废液储存槽202中。
回收系统优选地还包括冷却装置，冷却装置中的冷却液优选为水，该冷却装置包覆在废液储存槽202的外壁上，用于对废液收集的过程中进行降温，初步降低CdS的生成速率。
废液A进入废液储存槽202后温度降低，由此形成降温的废液BB。废液BB的组成与废液A1基本一致，但是由于温度降低，溶液中的硫化镉粒子降低，硫化镉粒子稍微增加。
降温后的废液BB由废液储存槽202进入制冷装置203中，进一步进行制冷。废液经过制冷后形成废液CC。废液CC的组成与废液BB基本一致，但是由于进行制冷而使得产生更多的沉淀物，如硫化镉粒子、硫酸镉等。
从废液储存槽202出来后，废液将会被泵入到制冷装置203，对废液进行进一步降温，将温度降至室温以下(5摄氏度)，使CdS的生成进入停滞状态。
上述制冷装置203的具体结构可以有多种，可以为物理制冷装置203也可以为化学制冷装置203，这里就不再一一赘述。
冷却后的废液将进入装有滤芯(约0.02um)的过滤装置204，将废液中的CdS颗粒过滤干净，同时也过滤析出的化学品原料：硫酸镉和硫脲。
经过过滤装置204后，CdS等固体粒子被滤出。此提纯后的化学液CC将会被泵入至化学液储存槽。该化学液储存槽的外壁上优选地设置 有低温维护装置，用于保持化学液储存槽内的温度处于设定的温度区间，确保溶液保持在低温状态。
可以根据情况，利用补充供药装置106向化学液储存槽205中补充化学品。补入的化学品是硫酸镉、氨水等，优选的，通过补充供药装置205向化学液储存槽205的硫酸镉和氨水溶液与返回至硫化镉反应槽中的化学液的比例为15％～25％，优选为20％。
本领域技术人员可以理解的是，该实施例提供的化学浴沉积装置还可以包括第二动力泵、第三动力泵、第四动力泵和第五动力泵，其中，第二动力泵用于将废液储存槽202中的废液泵入到制冷装置203中；第三动力泵用于将制冷装置203中的废液泵入到过滤装置204中；第四动力泵用于将过滤装置204中的化学液泵入到化学液储存槽205中；第五动力泵用于将化学液储存槽205中的液体泵入到硫化镉反应槽103中。
优选地，化学液储存槽205的出液口与硫化镉反应槽103的进液口之间设置有第一调节阀；化学液储存槽205的进液口与补充供药装置106的出液口之间设置有第二调节阀。通过阀的启闭，控制槽与槽之间的液体流通。本领域技术人员还可以理解的是，废液储存槽202的进液口与硫化镉反应槽103的出液口之间也可以设有第三调节阀；废液储存槽202的出液口与制冷装置203的进液口之间也可以设有第四调节阀；制冷装置203的出液口与过滤装置204的进液口之间还可以设有第五调节阀；过滤装置204的出液口与化学液储存槽205的进液口之间还可以设有第六调节阀，在此不作一一限定。
进一步地，该回收系统还包括电导率检测仪，设置在化学液储存槽中，用于测量化学液储存槽中的化学液的电导率，在上述实施例的基础上，本公开实施例提供的化学浴沉积装置还包括控制装置，用于根据所述电导率检测仪测量得到的电导率控制所述第二调节阀的启闭。
进一步地，该回收系统还包括Cd 2+离子检测仪，设置在化学液储存槽中，用于测量化学液储存槽中的化学液的Cd 2+浓度。
根据测得的电导率数据计算化学液中离子(镉离子、SO 4 2-、OH -和/或NH 4 +)整体的浓度或根据Cd 2+离子检测仪得到的Cd 2+浓度，从而得到化学液中各化学品原料的浓度；当化学品原料的浓度达到设定值时， 上述控制装置控制第二调节阀关闭，从而停止向化学液储存槽中的化学液加入化学品。
例如，使用电导率检测仪测量化学液储存槽中化学液中的硫酸镉、氨水和硫脲的整体浓度。电导率与液体中的离子浓度呈正相关关系，在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测硫化镉废液中Cd 2+、SO 4 2-、氨水、硫脲浓度和电导率数据，得到关系曲线。从而根据电导率仪数据计算出沉积槽中的Cd 2+浓度，进而得知需要添加的化学品量。
如图4所示，本公开实施例还提供了一种化学浴沉积装置的沉积方法，包括如下步骤：
步骤S1、将硫化镉沉积槽301中的废液通入到废液储存槽202中，优选的在废液储存槽202中可以先进行第一次降温。所述废液可以包含镉化合物、硫化镉、NH 4+源以及硫化合物。优选地，所述废液包含硫酸镉、硫化镉、尿素、氨水以及硫脲。
具体地，可通过第一动力泵将硫化镉沉积槽301中的硫化镉废液通入到废液储存槽202中。
步骤S2、将降温后的废液通入到制冷装置203中进行制冷。
优选地，将降温后的废液通入到制冷装置203中，使制冷装置203中的液体温度降低至5摄氏度以下。
步骤S3、将制冷后的废液通入到过滤装置204中进行过滤。
具体地，将制冷后的废液通入到过滤装置204中，将制冷后的废液中的硫化镉全部滤除。过滤后的废液可以含有硫酸镉、硫脲、硫化镉、氨水以及硫脲。
步骤S4、将过滤后的废液通入到化学液储存槽中。
此槽具有低温维护装置，确保溶液保持在低温状态。
步骤S5、利用补充供药装置向化学液储存槽中的化学液加入化学品；
步骤S6、将化学液储存槽中的化学液通入到硫化镉沉积槽301中，以此循环上述步骤S1～S6进行沉积。
优选地，如图5所示，在步骤S1之前，还可以包括步骤S0，S0步 骤具体为：
在硫化镉沉积槽301中加入化学沉积液，化学沉积液可以包含镉化合物、OH -化合物、NH 4+源和/或硫化合物，
优选地，所述镉化合物可以为硫酸镉、氯化镉、醋酸镉和硝酸镉中的任意一种或其任意混合物；
优选地，所述OH-化合物可以为KOH、NaOH和氨水中的任意一种或者其任意混合物。
优选地，所述NH 4 +源可以为氨水、乙酸铵和尿素中的任意一种或者其混合物。
优选地，所述硫化合物可以为硫脲和亚硫酸钠中的任意一种或其任意混合物。
优选地，化学沉积液中还可以包括助剂，如尿素、乙酸氨等，以用于改善沉积于基板上的硫化镉膜层的晶型。
优选地，在硫化镉沉积槽301中加入化学沉积液时，物料的具体加入次序依次为镉化物，铵源，表面待沉积的基板，硫化物。
在加入硫化物(例如硫脲)至镉化合物(例如硫酸镉)和NH 4+源(例如氨水)的混合液后，便开始发生化学反应，即有硫化镉粒子生成。CdS化学浴沉积反应的过程如下：
第一步：Cd 2++4NH 3→Cd(NH 3) 4 2++2CH 3COO -
第二步：Cd(NH 3) 4 2+，OH-及硫化物如硫脲，亚硫酸钠等扩散到衬底表面活性点，硫化物在衬底表面活性点分解：
NH 2CSNH 2+OH -→CH 2N 2+H 2O+HS -
第三步：HS -进一步离解，形成二价硫离子：
HS -+OH -→S 2-+H 2O
第四步：Cd(NH 3) 4 2++S 2-→CdS+4NH 3
一般来说，基板必须在加入硫化物之前加入到化学品溶液中，并保证化学液的流场及温度在基板的各个角落均匀且稳定。反应结束后，化学品随即排放至废液槽，进入废液处理系统，并最终排放。
由于沉积在基板上的CdS层的厚度仅为50nm左右，在反应结束后，化学液中除了已生成的漂浮在液体中的CdS粒子外，还有大量未反应的化学品，包括硫化物(例如硫脲)、镉化合物(例如硫酸镉)和NH 4 +源(例如氨水)，硫化镉沉积完成后得到的化学沉积液也即废液。由于上述废液在排放时还处在反应温度(约60摄氏度)，化学反应还在持续进行，且较为快速，因此未反应的化学品的浓度也在迅速降低，且不易检测。由于没有快速控制废液中化学反应的方法，也没有提纯及循环利用未反应化学品的方式，通常废液会在CdS沉积之后全部排放。
在硫化镉沉积槽301中加入化学沉积液后，便开始发生化学反应，即有硫化镉粒子生成。由此可以在基板上沉积硫化镉层。
优选地，所述化学沉积液包括硫酸镉，氨水，硫脲。
硫化镉沉积后产生的废液A从硫化镉沉积槽301流出到废液储存槽202中，废液A包含反应生成的未沉积于基板上的硫化镉粒子、过量的镉化合物(如硫酸镉)、过量的NH 4 +源、过量的硫化合物等。
在一些实施方式中，化学沉积液可以为硫酸镉溶液体系，包含硫酸镉、氨水和硫脲配置成的溶液，所述废液A包含硫酸镉、硫化镉粒子、氨水以及硫脲。
在一些实施方式中，化学沉积液可以为氯化镉溶液体系，包含氯化镉、氨水和硫脲配置成的溶液。所述废液A包含氯化镉、硫化镉粒子、氨水以及硫脲。
在一些实施方式中，优选地，化学沉积液可以为醋酸镉溶液体系，包含醋酸镉、氨水和硫脲配置成的溶液，由此废液A包含醋酸镉、硫化镉粒子、氨水以及硫脲。
废液A进入废液储存槽202后温度降低，由此形成降温的废液B。废液B的组成与废液A基本一致，但是由于温度降低，硫化镉粒子稍微增加。
降温后的废液B由制冷装置203的进液口进入制冷装置203中，进一步进行制冷。废液经过制冷后形成废液C。废液C的组成与废液B 基本一致，但是由于进行制冷而使得产生更多的沉淀物，如硫化镉粒子、镉化合物等。
补入的化学品可以是镉化合物、NH 4 +源和/或硫化合物，特别是硫酸镉、氨水和/或硫脲。
在化学反应完全并取出基板后，化学浴沉积槽中的化学液将作为废液引入到废液储存槽202中，优选地，硫化镉沉积槽301中的废液通过第一动力泵泵入到废液储存槽202中。
优选地，化学液储存槽装有精密的电导率监测仪，可对溶液的电导率进行快速在线测量。
优选地，将化学液储存槽中的化学液通入到硫化镉沉积槽301中之前，该方法还包括：
监测化学液储存槽中化学液的电导率，Cd 2+浓度，pH值，根据测得的电导率数据计算化学液中各种离子(例如镉离子、SO 4 2-、OH -和/或NH 4 +)的整体浓度，从而得到化学品原料的浓度；
当化学品原料的浓度达到设定值时，控制第二调节阀关闭，从而停止向化学液储存槽中的化学液加入化学品。
具体地，电导率测量化学液储存槽中化学液中的镉化合物，NH 4 +源和硫化合物等的离子的整体浓度。电导率与液体中的离子浓度有直接关系，例如Cd和SO 4离子的浓度。在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测废液中杂质浓度和电导率数据，得到关系曲线。本领域内的技术人员将会理解，该关系曲线是废液中镉化合物，NH 4 +源和硫化合物等的离子的整体浓度与测得的电导率的关系曲线。进而得知需要添加的化学品量。
具体地，电导率与液体中的离子浓度有直接关系，采用电导率检测仪测量化学液储存槽中化学液中的硫酸镉，氨水和硫脲的整体浓度。例如Cd 2+和SO 4 2-离子的浓度。在最初调试时，需要对电导率和浓度的关系进行表征。通过外部检测废液中杂质浓度和电导率数据，得到关系曲线。进而得知需要添加的化学品量。
进一步地，监测化学液储存槽中Cd 2+的浓度，将监测到的化学液储存槽中的Cd 2+浓度与初始反应时的Cd 2+离子浓度相比较，从而判断出化 学浴沉积的反应进度，从而计算得到化学液中的化学品原料的浓度。
进一步，监测化学液储存槽中的溶液的pH值，将测得的pH值与硫化镉沉积槽301沉积硫化镉时的pH值相比较，进一步计算出需要补充的氨水或是碱液如NaOH或KOH的含量。
如图6所示，本公开实施例再提供了一种废液回收方法，包括：
步骤S10、将硫化镉沉积槽301中的废液通入到废液储存槽202中，优选的，可以在所述废液储存槽202中进行降温。
步骤S20、将降温后的废液通入到制冷装置203中进行制冷。
将降温后的废液通入到制冷装置203中，使制冷装置203中的液体温度降低至5摄氏度以下。
步骤S30、将制冷后的废液通入到过滤装置204中进行过滤。
将制冷后的废液通入到过滤装置204中，将制冷后的废液中的硫化镉全部滤除，同时滤出硫酸镉和硫脲。
步骤S40、将过滤后的废液通入到化学液储存槽中。
本公开实施例提供的硫化镉沉积装置、硫化镉层沉积方法、废液回收系统及方法，与现有CBD技术相比有着显著的优势，通过对硫化镉沉积槽301中的沉积硫化镉后得到的废液进行循环回收再利用，化学沉积液中的镉化合物，铵源等化学品的利用率大大增加，由原有的15％增加至65％。此方案尤其对浸泡(dipping)方式的CBD设备最为有益，因为浸泡方式对化学品溶液的用量需求大，持续大规模生产过程中的OPEX较高。通常来说，摇摆(wobbling)方式CBD设备价格高昂，但化学品用量较少。此技术方案将使造价较低的浸泡式CBD设备占有优势，使CIGS生产线的整体生产运营成本大大降低。
通过对工艺的优化，如采用冷却与制冷两级降温工艺，冷却过程时，由硫化镉沉积槽301得到的化学沉积液进入废液储存槽202，在废液储存槽202的水冷作用下，降至室温使得CdS粒子(颗粒)的生成逐步停滞，制冷工艺制冷与冷却过程可持续提高化学液提纯的效率，使得化学液的回收利用次数增加，进一步提高化学品利用率从65％提升至90％。
以上依据图式所示的实施例详细说明了本公开的构造、特征及作用效果，以上所述仅为本公开的较佳实施例，但本公开不以图面所示限定 实施范围，凡是依照本公开的构想所作的改变，或修改为等同变化的等效实施例，仍未超出说明书与图示所涵盖的精神时，均应在本公开的保护范围内。

Claims (19)

  1. 一种废液回收系统，其特征在于，包括：
    废液储存槽，用于储存硫化镉沉积槽沉积产生的废液；
    制冷装置，用于对储存的所述废液制冷；
    过滤装置，用于过滤制冷得到的废液；
    化学液储存槽，用于储存过滤后的废液；
    所述废液储存槽的进液口与所述硫化镉反应槽的出液口相连；
    所述废液储存槽的出液口与所述制冷装置的进液口相连；
    所述制冷装置的出液口与所述过滤装置的进液口相连；
    所述过滤装置的出液口与所述化学液储存槽的废液进液口相连。
  2. 根据权利要求1所述的废液回收系统，其特征在于，所述废液回收系统还包括冷却装置，所述冷却装置包覆在所述废液储存槽的外壁上。
  3. 根据权利要求2所述的废液回收系统，其特征在于，所述冷却装置中的冷却液为水。
  4. 根据权利要求3所述的废液回收系统，其特征在于，所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口相连，且二者之间设置有第一调节阀。
  5. 根据权利要求3所述的废液回收系统，其特征在于，还包括保温装置，所述保温装置设置在所述化学液储存槽的外壁上，用于保持所述化学液储存槽内的温度处于设定的温度区间。
  6. 一种化学浴沉积装置，其特征在于，包括：
    硫化镉沉积槽，用于进行硫化镉沉积；
    废液储存槽，用于储存所述硫化镉沉积产生的废液；
    制冷装置，用于对储存的所述废液制冷；
    过滤装置，用于过滤制冷得到的废液；
    化学液储存槽，用于储存过滤后的废液；以及
    补充供料装置，用于向所述化学液储存槽中补入化学品原料；
    所述废液储存槽的进液口与所述硫化镉沉积槽的出液口相连；
    所述废液储存槽的出液口与所述制冷装置的进液口相连；
    所述制冷装置的出液口与所述过滤装置的进液口相连；
    所述过滤装置的出液口与所述化学液储存槽的废液进液口相连；
    所述补充供药装置的出液口与所述化学液储存槽的原料进液口相连；
    所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口相连。
  7. 根据权利要求6所述的化学浴沉积装置，其特征在于，所述化学浴沉积装置还包括冷却装置，所述冷却装置包覆在所述废液储存槽的外壁上。
  8. 根据权利要求7所述的化学浴沉积装置，其特征在于，所述冷却装置中的冷却液为水。
  9. 根据权利要求6所述的化学浴沉积装置，其特征在于，所述化学液储存槽的出液口与所述硫化镉沉积槽的进液口之间设置有第一调节阀；
    所述补充供药装置的出液口与所述化学液储存槽的进液口之间设置有第二调节阀。
  10. 根据权利要求9所述的化学浴沉积装置，其特征在于，还包括电导率检测仪，所述电导率检测仪设置在所述化学液储存槽中，用于测量所述化学液储存槽中的废液的电导率。
  11. 根据权利要求10所述的化学浴沉积装置，其特征在于，还包括离子检测仪，所述离子检测仪设置在所述化学液储存槽中，用于测量所述化学液储存槽中的废液含有的Cd 2+浓度。
  12. 根据权利要求11所述的化学浴沉积装置，其特征在于，还包括控制装置，用于根据所述电导率检测仪测量得到的电导率和/或所述离子检测仪测得的Cd 2+浓度控制所述第二调节阀的启闭。
  13. 根据权利要求6所述的化学浴沉积装置，其特征在于，还包括保温装置，所述保温装置设置在所述化学液储存槽的外壁上，用于保持所述化学液储存槽内的温度处于设定的温度区间。
  14. 一种应用于如权利要求6所述的化学浴沉积装置的沉积方法，其特征在于，包括下列步骤：
    将硫化镉沉积槽中的废液通入到废液储存槽中储存，之后将废液储 存槽中的废液通入到制冷装置中进行制冷；
    将所述制冷后的废液通入到过滤装置中进行过滤；
    将所述过滤后的废液通入到化学液储存槽中储存；
    利用补充供料装置向所述化学液储存槽中加入化学品原料；
    将所述化学液储存槽中储存的废液和加入的化学品原料形成的化学液通入到所述硫化镉沉积槽中进行硫化镉沉积。
  15. 根据权利要求14所述的沉积方法，其特征在于，所述将硫化镉沉积槽中的废液先通入到废液储存槽中储存的步骤中，对废液储存槽中储存的废液降温至20～30℃。
  16. 根据权利要求14所述的沉积方法，其特征在于，所述将废液储存槽中的废液通入到制冷装置中进行制冷的步骤中，所述制冷后的废液温度小于等于15℃。
  17. 根据权利要求14所述的沉积方法，其特征在于，利用补充供料装置向所述化学液储存槽中加入化学品原料之前，所述沉积方法还包括：
    监测化学液储存槽中储存的废液的电导率和/或监测化学液储存槽中废液的Cd 2+浓度，根据测得的电导率和/或Cd 2+浓度计算废液中镉粒子的含量，根据所述镉粒子的含量得到加入化学品原料的浓度。
  18. 根据权利要求14所述的沉积方法，其特征在于，所述化学液储存槽中储存的废液和加入的化学品原料形成的化学液包含镉化合物、硫化合物、可溶性碱性化合物和/或氨基化合物。
  19. 根据权利要求18所述的沉积方法，所述镉化合物包括硫酸镉、氯化镉、醋酸镉和硝酸镉中的任意一种或几种的混合物；
    所述硫化合物为硫脲和亚硫酸钠中的任意一种或二者的混合物；
    所述可溶性碱性化合物为KOH、NaOH和氨水中的任意一种或几种的混合物；
    所述氨基化合物为氨水、乙酸铵和尿素中的任意一种或几种的混合物。
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