CN103904166B - 一种CdSexTey量子点光电薄膜的制备方法 - Google Patents

一种CdSexTey量子点光电薄膜的制备方法 Download PDF

Info

Publication number
CN103904166B
CN103904166B CN201410163618.XA CN201410163618A CN103904166B CN 103904166 B CN103904166 B CN 103904166B CN 201410163618 A CN201410163618 A CN 201410163618A CN 103904166 B CN103904166 B CN 103904166B
Authority
CN
China
Prior art keywords
solution
quantum dot
cdse
water
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201410163618.XA
Other languages
English (en)
Other versions
CN103904166A (zh
Inventor
钟福新
王伟
王丹宇
王苏宁
黎燕
莫德清
朱义年
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changshu Huaqiang insulating material Co.,Ltd.
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN201410163618.XA priority Critical patent/CN103904166B/zh
Publication of CN103904166A publication Critical patent/CN103904166A/zh
Application granted granted Critical
Publication of CN103904166B publication Critical patent/CN103904166B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02562—Tellurides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02601—Nanoparticles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)

Abstract

本发明公开了一种CdSexTey量子点光电薄膜的制备方法。（1）称取0.4317～1.2953g？Cd（NO3）2·4H2O于烧杯中，加入0.2689～0.8069g柠檬酸作为络合剂，再加入水，配成10mL络合水溶液A；（2）称取0.0399～0.1197g？TeO2于烧杯中，滴加1mol/L？NaOH溶液，直至TeO2全部溶解，再加入0.0432～0.1297g？Na2SeO3和水，配成10mL溶液B；（3）将络合水溶液A和溶液B混合起来得溶液C；（4）将溶液C放入45～55℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在2.5～3.5V直流电压及磁力搅拌下电沉积20～40分钟。本发明最显著的特点是电化学共沉积法获得CdSexTey量子点光电薄膜，制备工艺简便高效、无污染、低成本，所得CdSexTey量子点光电薄膜具有较高光电压值。

Description

一种CdSexTey量子点光电薄膜的制备方法
技术领域
本发明涉及一种CdSexTey量子点光电薄膜的制备方法。
背景技术
太阳能被认为是21世纪最具大规模开发潜力的新能源之一。太阳能电池是利用太阳能，直接将光能转化为电能的器件，已经被广泛地应用。量子点太阳能电池是目前最新、最尖端的太阳能电池之一，其尺度介于宏观固体与微观原子、分子之间，量子点太阳能电池将会在未来的太阳能转化中显示出巨大的发展前景。其中耗尽层异质结太阳能电池主要依靠P型的量子点与N型的高迁移率半导体材料构成P-N结提供内建电场，能快速分离电子空穴对，是一类比较有发展前景的电池结构。p型CdTe是研究较多的量子点之一，CdTe量子点既可在高温的有机体系中制备，也能于水相合成。迄今为止，用于制备CdTe量子点的含碲物质主要是碲粉和碲化铝。若使用碲粉，则首先要将单质碲转化为化合态的碲前体，然后再将碲前体注入镉前体的储备液中，过程比较烦琐。碲化铝对湿度很敏感，不易保存，用于合成水溶性CdTe量子点时，容易产生剧毒性的H2Te气体，对实验操作人员及周围环境危害较大。在合成CdTe基础上掺杂其它元素也有报道，但也避免不了上述问题，而电化学共沉积法制备CdSexTey量子点薄膜的研究尚未见报道，该制备工艺简单、条件易控制、不产生污染且CdSexTey量子点薄膜的开路光电压也比较大，是一种较好的光电材料，有望作为太阳能光电池材料。
发明内容
本发明的目的是提供一种用电化学共沉积法制备具有良好光电性能的CdSexTey量子点光电薄膜的方法，其中x=0.53～0.79，y=0.21～0.47。
本发明的具体步骤为：
（1）称取0.4317～1.2953gCd（NO3）2·4H2O于烧杯中，加入0.2689～0.8069g柠檬酸作为络合剂，加入水配成10mL络合水溶液，记为溶液A。
（2）称取0.0399～0.1197gTeO2于烧杯中，滴加1mol/LNaOH溶液，直至TeO2全部溶解，再加入0.0432～0.1297gNa2SeO3并加水配成10mL水溶液，搅拌均匀，记为溶液B。
（3）将步骤（1）所得溶液A和步骤（2）所得溶液B混合起来得溶液C；溶液C中Cd元素的物质的量为1.4～4.2mmol，Te元素的物质的量为0.25～0.75mmol，Se元素的物质的量为0.25～0.75mmol，Cd、Se、Te的摩尔比控制为5.6:1:1。
（4）将步骤（3）所得溶液C放入45～55℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在2.5～3.5V直流电压及磁力搅拌下电沉积20～40分钟，即获得CdSexTey量子点光电薄膜,其中x=0.53～0.79，y=0.21～0.47；CdSexTey量子点光电薄膜在模拟太阳光下的开路光电压达到0.1465~0.4641V。
本发明与其它相关技术相比，最显著的特点是电化学法制备CdSexTey量子点光电薄膜，其制备工艺简便、无污染，所得样品有较好的光电性能。
具体实施方式
实施例1：
（1）称取1.2953gCd（NO3）2·4H2O于烧杯中，加入0.8069g柠檬酸作为络合剂，再加入水配成10mL络合水溶液，记为溶液A。
（2）称取0.1197gTeO2于烧杯中，滴加1mol/LNaOH溶液，直至TeO2全部溶解，再加入0.1297gNa2SeO3和水，配成10mL水溶液，搅拌均匀，记为溶液B。
（3）将步骤（1）所得溶液A和步骤（2）所得溶液B混合起来得溶液C；溶液C中Cd元素的物质的量为4.2mmol，Te元素的物质的量为0.75mmol，Se元素的物质的量为0.75mmol，Cd、Se、Te的摩尔比控制为5.6:1:1。
（4）将步骤（3）所得溶液C放入45℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在2.5V直流电压及磁力搅拌下电沉积20分钟，即获得CdSexTey量子点光电薄膜；它在模拟太阳光下的开路光电压达到0.2092V。CdSexTey量子点中的x=0.53、y=0.47。
实施例2：
（1）称取0.8634gCd（NO3）2·4H2O于烧杯中，加入0.5378g柠檬酸作为络合剂，再加入水配成10mL络合水溶液，记为溶液A。
（2）称取0.0798gTeO2于烧杯中，滴加1mol/LNaOH溶液，直至TeO2全部溶解，再加入0.0864gNa2SeO3和水，配成10mL水溶液，搅拌均匀，记为溶液B。
（3）将步骤（1）所得溶液A和步骤（2）所得溶液B混合起来得溶液C；溶液C中Cd元素的物质的量为2.8mmol，Te元素的物质的量为0.5mmol，Se元素的物质的量为0.5mmol，Cd、Se、Te的摩尔比控制为5.6:1:1。
（4）将步骤（3）所得溶液C放入55℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在3.5V直流电压及磁力搅拌下电沉积40分钟，即获得CdSexTey量子点光电薄膜；它在模拟太阳光下的开路光电压达到0.3235V。CdSexTey量子点中的x=0.63、y=0.37。
实施例3：
（1）称取0.4317gCd（NO3）2·4H2O于烧杯中，加入0.2689g柠檬酸作为络合剂，再加入水配成10mL络合水溶液，记为溶液A。
（2）称取0.0399gTeO2于烧杯中，滴加1mol/LNaOH溶液，直至TeO2全部溶解，再加入0.0432gNa2SeO3和水，配成10mL水溶液，搅拌均匀，记为溶液B。
（3）将步骤（1）所得溶液A和步骤（2）所得溶液B混合起来得溶液C；溶液C中Cd元素的物质的量为1.4mmol，Te元素的物质的量为0.25mmol，Se元素的物质的量为0.25mmol，Cd、Se、Te的摩尔比控制为5.6:1:1。
（4）将步骤（3）所得溶液C放入50℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在3V直流电压及磁力搅拌下电沉积30分钟，即获得CdSexTey量子点光电薄膜；它在模拟太阳光下的开路光电压达到0.4641V。CdSexTey量子点中的x=0.79、y=0.21。

Claims (1)

1.一种CdSexTey量子点光电薄膜的制备方法，其中x=0.53～0.79，y=0.21～0.47，其特征在于具体步骤为：
（1）称取0.4317～1.2953gCd（NO3）2·4H2O于烧杯中，加入0.2689～0.8069g柠檬酸作为络合剂，加入水配成10mL络合水溶液，记为溶液A；
（2）称取0.0399～0.1197gTeO2于烧杯中，滴加1mol/LNaOH溶液，直至TeO2全部溶解，再加入0.0432～0.1297gNa2SeO3并加水配成10mL水溶液，搅拌均匀，记为溶液B；
（3）将步骤（1）所得溶液A和步骤（2）所得溶液B混合起来得溶液C；溶液C中Cd元素的物质的量为1.4～4.2mmol，Te元素的物质的量为0.25～0.75mmol，Se元素的物质的量为0.25～0.75mmol，Cd、Se、Te的摩尔比控制为5.6:1:1；
（4）将步骤（3）所得溶液C放入45～55℃水浴中，以ITO导电玻璃为阴极，铂片为阳极，在2.5～3.5V直流电压及磁力搅拌下电沉积20～40分钟，即获得CdSexTey量子点光电薄膜,其中x=0.53～0.79，y=0.21～0.47。
CN201410163618.XA 2014-04-23 2014-04-23 一种CdSexTey量子点光电薄膜的制备方法 Active CN103904166B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410163618.XA CN103904166B (zh) 2014-04-23 2014-04-23 一种CdSexTey量子点光电薄膜的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410163618.XA CN103904166B (zh) 2014-04-23 2014-04-23 一种CdSexTey量子点光电薄膜的制备方法

Publications (2)

Publication Number Publication Date
CN103904166A CN103904166A (zh) 2014-07-02
CN103904166B true CN103904166B (zh) 2016-03-02

Family

ID=50995405

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410163618.XA Active CN103904166B (zh) 2014-04-23 2014-04-23 一种CdSexTey量子点光电薄膜的制备方法

Country Status (1)

Country Link
CN (1) CN103904166B (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104692660B (zh) * 2015-02-27 2017-05-17 武汉理工大学 一种制备硫硒化镉量子点玻璃的方法
CN105499596B (zh) * 2015-12-06 2017-12-12 桂林理工大学 在电沉积CdSe薄膜上自发生长Au纳米微粒的方法
CN105670634A (zh) * 2016-02-28 2016-06-15 桂林理工大学 一种有机液相法可控制备CdSe量子点的方法
CN106653946B (zh) * 2016-12-27 2018-07-06 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池吸收层的沉积方法
CN109950330A (zh) * 2019-03-19 2019-06-28 扬州大学 一种CsPbBr3量子点-硅基复合结构太阳能电池

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1294232C (zh) * 2005-04-07 2007-01-10 上海交通大学 水溶性荧光CdTe/ZnSe核壳量子点的制备方法
KR101328476B1 (ko) * 2012-08-20 2013-11-13 포항공과대학교 산학협력단 유기발광다이오드의 제조방법

Also Published As

Publication number Publication date
CN103904166A (zh) 2014-07-02

Similar Documents

Publication Publication Date Title
Kondrotas et al. Sb2S3 solar cells
Kang et al. Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting
Luo et al. Solution transformation of Cu2O into CuInS2 for solar water splitting
Cui et al. A simple two-step electrodeposition of Cu2O/ZnO nanopillar solar cells
CN106025085B (zh) 基于Spiro‑OMeTAD/CuXS复合空穴传输层的钙钛矿太阳能电池及其制备方法
CN103904166B (zh) 一种CdSexTey量子点光电薄膜的制备方法
CN102231450B (zh) 一种基于p型硅光阴极的自偏压光电化学电池及制备方法
CN101857382B (zh) 一种片状碘氧化铋纳米薄膜电极的制备方法
US9048097B2 (en) Semiconductive micro- and nano-wire array manufacturing
US20130276873A1 (en) High level injection systems
Inguanta et al. An electrochemical route towards the fabrication of nanostructured semiconductor solar cells
CN104505423A (zh) 一种溶液法加工的倒置结构CdTe纳米晶异质结高效太阳电池及其制备方法
CN103296123A (zh) P-型碳量子点/n-型硅纳米线阵列异质结太阳能电池及其制备方法
CN106169537A (zh) 一种太阳能电池的制备方法
CN104593814A (zh) MoS2修饰硅纳米线阵列光电化学析氢电极及制备方法和基于该电极的电极体系
CN103208588B (zh) 一种倒置结构的有机/聚合物太阳能电池
Wu et al. Two-stage melt processing of phase-pure selenium for printable triple-mesoscopic solar cells
CN103151463A (zh) 一种有机太阳能电池及其制备方法
CN104282440A (zh) 一种硫族量子点敏化氧化物半导体光阳极的制备方法
Zhang et al. Performance analysis of all-inorganic Cs3Sb2I9 perovskite solar cells with micro-offset energy level structure by SCAPS-1D simulation and First-principles calculation
CN204230261U (zh) 一种石墨烯/砷化镓太阳电池
CN103066209B (zh) 一种太阳电池及其制备方法
CN103515106B (zh) 一种PbS/ITO薄膜基光电化学光伏电池制备法
CN105118676A (zh) 一种新型染料敏化太阳能电池及其制备方法
CN112885967B (zh) 一种基于延迟荧光材料的双层有机太阳能电池及制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20210629

Address after: 215500 5th floor, building 4, 68 Lianfeng Road, Changfu street, Changshu City, Suzhou City, Jiangsu Province

Patentee after: Changshu intellectual property operation center Co.,Ltd.

Address before: 541004 the Guangxi Zhuang Autonomous Region Guilin Construction Road No. 12

Patentee before: GUILIN University OF TECHNOLOGY

Effective date of registration: 20210629

Address after: 215500 Liantang aquaculture farm, Shanghu Town, Changshu City, Suzhou City, Jiangsu Province (east area of Liantang Industrial Park)

Patentee after: Changshu Huaqiang insulating material Co.,Ltd.

Address before: 215500 5th floor, building 4, 68 Lianfeng Road, Changfu street, Changshu City, Suzhou City, Jiangsu Province

Patentee before: Changshu intellectual property operation center Co.,Ltd.