CN110137342A - 一种大功率霍尔器件用引线框架、封装结构及其封装工艺 - Google Patents
一种大功率霍尔器件用引线框架、封装结构及其封装工艺 Download PDFInfo
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Abstract
本发明公开了一种大功率霍尔器件用引线框架、封装结构及其封装工艺,包括引线框架本体和设置于引线框架本体上端的基岛,所述基岛通过两侧的基岛连筋与引脚固定连接。在通过使用导电胶将芯片粘贴到基岛上,保证了散热效果的情况下,通过设置的基岛连筋将引脚和基岛隔开,避免芯片通过基岛与引脚连通造成击穿的情况。
Description
技术领域
本发明属于水利施工设备技术领域,具体涉及一种大功率霍尔器件用引线框架、封装结构及其封装工艺。
背景技术
最近几年,集成电路IC设计、制造行业得到飞速发展,封装技术也得到了大幅提升。封装是整个集成电路制造过程中重要一环,它具有散热和保护功能。封装工艺能够将芯片密封,隔绝外界污染及外力对芯片的破坏,引线框架是支撑半导体芯片的金属衬底,引线框架广泛地用于在电子组件领域中封装半导体装置,框架的设计直接影响芯片在PVC电路板上的使用。。
在大功率霍尔器件的封装中,由于大功率霍尔器件例如TO-94底部不是 GND,所以为了避免芯片通过基岛直接与引脚导通,需要将芯片通过绝缘胶粘贴到引线框架的基岛上,而绝缘胶的银含量很低,不利于散热,会导致芯片使用寿命缩短,所以需要设计一种新型大功率霍尔器件用引线框架、封装结构及其封装工艺。
发明内容
本发明的目的在于提供一种新型大功率霍尔器件用引线框架、封装结构及其封装工艺投入使用,以解决上述背景技术中提出的问题。
为实现上述目的,本发明提供如下技术方案:一种大功率霍尔器件用引线框架,包括引线框架本体和设置于引线框架本体上端的基岛,所述基岛通过两侧的基岛连筋与引脚固定连接。
优选的,所述基岛连筋为铜制,且基岛连筋的另一端与引脚的上部焊接。
本发明提供了一种封装结构,包括塑封壳体和设置于塑封壳体的内侧的引线框架本体,所述引线框架本体上端的基岛上的通过导电胶粘贴有芯片,所述芯片通过基岛和引线的配合接地,所述芯片通过引线与各个引脚电性连接,所述基岛两侧固定设置有基岛连筋。
优选的,所述塑封壳体的边缘位置采用倒喇叭连接方式。
优选的,所述基岛连筋为L形铜片,且基岛连筋的横杆长度略大于塑封壳体的长度。
本发明还提供了一种封装工艺,包含如下步骤:
S1用特制的冲压模具对引线框架本体进行冲压,在引线框架本体的上端压出基岛和基岛连筋;
S2将引脚焊接到基岛连筋上,将芯片通过导电胶粘贴到基岛上;
S3通过引线将芯片和各个引脚进行电连接,并且将基岛通过引线接地;
S4将塑封壳体卡接到引线框架本体的外侧,基岛两侧的基岛连筋的部分伸出塑封壳体;
S5通过塑封模具镶件将塑封壳体稳定的卡接到模具上,通过切筋凸模对伸出塑封壳体的基岛连筋进行切割;
S6最后对塑封壳体的两侧进行打磨,将毛刺打磨平整。
优选的,所述基岛和基岛连筋均为引线框架本体受到冲压形成,且基岛和基岛连筋与引线框架本体为一体式结构。
优选的,所述切筋凸模的下端设置有导向槽,所述导向槽的长度略大于塑封壳体的高度。
优选的,所述基岛连筋的横杆端部伸出塑封壳体。
本发明的技术效果和优点:该大功率霍尔器件用引线框架,大功率霍尔器件存在底部没有GND的特性,所以在塑封和粘贴芯片是需要使用绝缘胶,所以本发明中,为了保证散热性能使用了导电胶,并且设置了基岛连筋将基岛和引脚进行隔开,避免芯片通过基岛与引脚之间导通影响产品的正常使用的情况,并且在塑封时将基岛和引脚之间的基岛连筋切断,同时使得芯片通过基岛和引线配合接地,再通过引线与各个引脚连通,在保证大功率霍尔器件的散热效果的情况下,保证了器件可以正常使用,散热性更好,芯片使用寿命更长。
附图说明
图1为本发明的结构示意图;
图2为塑封后的结构示意图;
图3为塑封模具镶件的结构示意图;
图4为切筋凸模的结构示意图。
图中:1、引线框架本体;2、基岛;3、基岛连筋;4、引脚;5、塑封模具镶件;6、切筋凸模;7、塑封壳体;8、芯片;61、导向槽。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
本发明提供了如图1所示的一种大功率霍尔器件用引线框架,包括引线框架本体1和设置于引线框架本体1上端的基岛2,所述基岛2通过两侧的基岛连筋3与引脚4固定连接,通过设置的的基岛连筋3将引脚4和基岛2分隔,避免引脚4直接焊接到基岛2的侧边,避免基岛2和引脚4直接连通。
所述基岛连筋3为铜制,且基岛连筋3的另一端与引脚4的上部焊接,通过设置的基岛连筋3保证引脚4与引线框架连接的稳定性。
本发明提供了如图2所示的一种封装结构,包括塑封壳体7和设置于塑封壳体7的内侧的引线框架本体1,所述引线框架本体1上端的基岛2上的通过导电胶粘贴有芯片8,所述芯片8通过基岛2和引线的配合接地,所述芯片 8通过引线与各个引脚4电性连接,所述基岛2两侧固定设置有基岛连筋3,在通过导电胶实现芯片8和基岛2的粘连时,由于导电胶的导电特性使得芯片8与基岛2连通,而大功率霍尔产品的底部没有GND,所以需要通过引线将基岛2接地,并且通过基岛连筋3将引脚4和基岛2隔开,避免芯片8通过基岛2与引脚4直接连通,造成产品无法使用的情况。
所述塑封壳体7的边缘位置采用倒喇叭连接方式,保证在对基岛连筋3 进行切割时塑封壳体7的下部可以充当切筋下刀,倒喇叭的设计可以减轻塑封壳体7的受力,方便基岛连筋3切断。
所述基岛连筋3为L形铜片,且基岛连筋3的横杆长度略大于塑封壳体7 的长度,保证在切掉伸出塑封壳体7的基岛连筋3后,可以将基岛2与引脚4 之间的基岛连筋3断开,避免基岛2通过基岛连筋3与引脚4导通。
本发明还提供了一种封装工艺,包含如下步骤:
S1用特制的冲压模具对引线框架本体1进行冲压,在引线框架本体1的上端压出基岛2和基岛连筋3;
S2将引脚焊接到基岛连筋3上,将芯片8通过导电胶粘贴到基岛2上;
S3通过引线将芯片8和各个引脚4进行电连接,并且将基岛2通过引线接地;
S4将塑封壳体7卡接到引线框架本体1的外侧,基岛2两侧的基岛连筋 3的部分伸出塑封壳体7;
S5通过如图3所示的塑封模具镶件5将塑封壳体7稳定的卡接到模具上,通过切筋凸模6对伸出塑封壳体7的基岛连筋3进行切割;
S6最后对塑封壳体7的两侧进行打磨,将毛刺打磨平整,通过特质的冲压模具冲压出基岛连筋3,使得引脚可以焊接到基岛连筋3上而不是直接与基岛连筋3,从而将基岛2和引脚4隔开,避免芯片8通过导电胶与基岛2导通后,基岛2又直接与引脚4连通的情况,所以在使用导电胶增加散热性能的同时解决了芯片8与引脚4直接与引脚4连通的问题,并且在塑封完毕后通过切筋凸模6对基岛连筋3进行切断,避免基岛2通过基岛连筋3与引脚4 导通的情况。
所述基岛2和基岛连筋3均为引线框架本体1受到冲压形成,且基岛2 和基岛连筋3与引线框架本体1为一体式结构,保证产品的一体性,产品各个部件之间连接更加紧密,集成性更高。
如图4所示,所述切筋凸模6的下端设置有导向槽61,所述导向槽61的长度略大于塑封壳体7的高度,在切割基岛连筋3时,切筋凸模6的导向槽 61贴住塑封壳体7的侧面向下滑动,保证可以完全切除伸出塑封壳体7的基岛连筋3。
所述基岛连筋3的横杆端部伸出塑封壳体7,保证在切掉伸出伸出塑封壳体7的基岛连筋3后可以实现基岛2和引脚4之间的基岛连筋3完全断开,从而避免基岛2通过基岛连筋3与引脚4导通。
最后应说明的是:以上所述仅为本发明的优选实施例而已,并不用于限制本发明,尽管参照前述实施例对本发明进行了详细的说明,对于本领域的技术人员来说,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (9)
1.一种大功率霍尔器件用引线框架,包括引线框架本体和设置于引线框架本体上端的基岛,其特征在于:所述基岛通过两侧的基岛连筋与引脚固定连接。
2.根据权利要求1所述的一种大功率霍尔器件用引线框架,其特征在于:所述基岛连筋为铜制,且基岛连筋的另一端与引脚的上部焊接。
3.一种封装结构,包括塑封壳体和设置于塑封壳体的内侧的引线框架本体,其特征在于:所述引线框架本体上端的基岛上的通过导电胶粘贴有芯片,所述芯片通过基岛和引线的配合接地,所述芯片通过引线与各个引脚电性连接,所述基岛两侧固定设置有基岛连筋。
4.根据权利要求3所述的一种封装结构,其特征在于:所述塑封壳体的边缘位置采用倒喇叭连接方式。
5.根据权利要求4所述的一种封装结构,其特征在于:所述基岛连筋为L形铜片,且基岛连筋的横杆长度略大于塑封壳体的长度。
6.一种封装工艺,其特征在于,包含如下步骤:
S1用特制的冲压模具对引线框架本体进行冲压,在引线框架本体的上端压出基岛和基岛连筋;
S2将引脚焊接到基岛连筋上,将芯片通过导电胶粘贴到基岛上;
S3通过引线将芯片和各个引脚进行电连接,并且将基岛通过引线接地;
S4将塑封壳体卡接到引线框架本体的外侧,基岛两侧的基岛连筋的部分伸出塑封壳体;
S5通过塑封模具镶件将塑封壳体稳定的卡接到模具上,通过切筋凸模对伸出塑封壳体的基岛连筋进行切割;
S6最后对塑封壳体的两侧进行打磨,将毛刺打磨平整。
7.根据权利要求8所述的一种封装工艺,其特征在于:所述基岛和基岛连筋均为引线框架本体受到冲压形成,且基岛和基岛连筋与引线框架本体为一体式结构。
8.根据权利要求8所述的一种封装工艺,其特征在于:所述切筋凸模的下端设置有导向槽,所述导向槽的长度略大于塑封壳体的高度。
9.根据权利要求6-8任意一项所述的一种封装工艺,其特征在于:所述基岛连筋的横杆端部伸出塑封壳体。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993786A (zh) * | 2019-11-13 | 2020-04-10 | 合肥久昌半导体有限公司 | 一种多排大功率霍尔元件加工工艺 |
CN116364686A (zh) * | 2023-04-03 | 2023-06-30 | 深圳市鑫宇微科技有限公司 | 引线框架和单相模块 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013093483A (ja) * | 2011-10-27 | 2013-05-16 | Semiconductor Components Industries Llc | 半導体装置及びその製造方法 |
CN203674200U (zh) * | 2013-12-25 | 2014-06-25 | 天水华天科技股份有限公司 | 具有防外漏散热片溢料的esop8l引线框架 |
CN204558456U (zh) * | 2015-03-24 | 2015-08-12 | 天水华天科技股份有限公司 | 集成电路散热片外露式引线框架 |
CN108364928A (zh) * | 2018-04-11 | 2018-08-03 | 气派科技股份有限公司 | 一种集成电路封装结构及其加工方法 |
CN207731919U (zh) * | 2017-12-25 | 2018-08-14 | 长电科技(宿迁)有限公司 | 一种功率器件封装结构 |
CN210040259U (zh) * | 2019-05-07 | 2020-02-07 | 合肥久昌半导体有限公司 | 一种大功率霍尔器件用引线框架及其封装结构 |
-
2019
- 2019-05-07 CN CN201910374555.5A patent/CN110137342A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013093483A (ja) * | 2011-10-27 | 2013-05-16 | Semiconductor Components Industries Llc | 半導体装置及びその製造方法 |
CN203674200U (zh) * | 2013-12-25 | 2014-06-25 | 天水华天科技股份有限公司 | 具有防外漏散热片溢料的esop8l引线框架 |
CN204558456U (zh) * | 2015-03-24 | 2015-08-12 | 天水华天科技股份有限公司 | 集成电路散热片外露式引线框架 |
CN207731919U (zh) * | 2017-12-25 | 2018-08-14 | 长电科技(宿迁)有限公司 | 一种功率器件封装结构 |
CN108364928A (zh) * | 2018-04-11 | 2018-08-03 | 气派科技股份有限公司 | 一种集成电路封装结构及其加工方法 |
CN210040259U (zh) * | 2019-05-07 | 2020-02-07 | 合肥久昌半导体有限公司 | 一种大功率霍尔器件用引线框架及其封装结构 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110993786A (zh) * | 2019-11-13 | 2020-04-10 | 合肥久昌半导体有限公司 | 一种多排大功率霍尔元件加工工艺 |
CN110993786B (zh) * | 2019-11-13 | 2023-05-30 | 合肥久昌半导体有限公司 | 一种多排大功率霍尔元件加工工艺 |
CN116364686A (zh) * | 2023-04-03 | 2023-06-30 | 深圳市鑫宇微科技有限公司 | 引线框架和单相模块 |
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