CN110137086A - Tft基板的制作方法及tft基板 - Google Patents

Tft基板的制作方法及tft基板 Download PDF

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CN110137086A
CN110137086A CN201910431502.2A CN201910431502A CN110137086A CN 110137086 A CN110137086 A CN 110137086A CN 201910431502 A CN201910431502 A CN 201910431502A CN 110137086 A CN110137086 A CN 110137086A
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layer
grid
metal
tft substrate
semiconductor layer
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CN110137086B (zh
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韦显旺
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US16/609,440 priority patent/US11411101B2/en
Priority to PCT/CN2019/091722 priority patent/WO2020232784A1/zh
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Abstract

本发明提供一种TFT基板的制作方法及TFT基板。本发明TFT基板的制作方法，以栅极为遮蔽层对金属氧化物半导体层进行UV光照射，使金属氧化物半导体层被UV光照射的部分导体化而形成源极、漏极及像素电极，使金属氧化物半导体层被栅极遮挡的部分仍保留半导体性质而形成半导体沟道，本发明通过栅极自对准及金属氧化物半导体层导体化工艺实现了源漏极与栅极的对准，能够有效控制源漏极与栅极的重叠区域，从而减小寄生电容，提高显示品质，且制作方法简单，提高了生产效率。

Description

TFT基板的制作方法及TFT基板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板的制作方法及TFT基板。
背景技术
在显示技术领域，液晶显示器(Liquid Crystal Display，LCD)与有源矩阵驱动式有机电致发光显示器(Active Matrix Organic Light-Emitting Diode，简称AMOLED)等平板显示器已经逐步取代阴极射线管(Cathode Ray Tube)显示器，广泛的应用于液晶电视、手机、个人数字助理、数字相机、计算机屏幕或笔记本电脑屏幕等。
显示面板是LCD、OLED显示器的重要组成部分。不论是LCD显示面板，还是OLED显示面板，通常都具有一薄膜晶体管(Thin Film Transistor，TFT)基板。以LCD显示面板为例，其主要是由TFT基板、彩色滤光片(Color Filter，CF)基板、以及配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在TFT基板与CF基板上施加驱动电压来控制液晶层中液晶分子的旋转，将背光模组的光线折射出来产生画面。因此，薄膜晶体管是目前LCD和OLED显示器中的主要驱动元件，直接关系到高性能平板显示装置的发展方向。
薄膜晶体管具有多种结构，制备相应结构的薄膜晶体管有源层的材料也具有多种，其中，金属氧化物薄膜晶体管(metal oxide TFT)具有场效应迁移率高(≥10cm2/V·s)、制备工艺简单、大面积沉积均匀性好、响应速度快及可见光范围内透过率高等特点，被认为是显示器朝着大尺寸及柔性化方向发展的最有潜力的背板技术。
随着LCD与OLED显示器的分辨率越来越高，单位面积下薄膜晶体管所占的比例也越来越多。请参阅图1，现有TFT基板中，栅极110与源极120之间以及栅极110与漏极130之间在垂直于基板100的方向上均存在部分重叠区域，导致薄膜晶体管的栅极-漏极寄生电容(parasitic capacitance)Cgd以及栅极-漏极寄生电容Cgs，相对于储存电容的比例也随之升高。因此，将上述的薄膜晶体管应用于显示面板的驱动电路时，在信号的传输上往往会产生相当大的电阻电容负载(RC loading)，导致显示器的显示品质下降。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，通过栅极自对准及金属氧化物半导体层导体化工艺实现源漏极与栅极的对准，能够有效控制源漏极与栅极的重叠区域，从而减小寄生电容，提高显示品质。
本发明的目的还在于提供一种TFT基板，采用上述TFT基板的制作方法制作形成，能够有效控制源漏极与栅极的重叠区域，从而减小寄生电容，提高显示品质。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、提供衬底基板，在所述衬底基板上沉积金属氧化物半导体层，对该金属氧化物半导体层进行图案化处理得到第一预备图案及与所述第一预备图案一侧连接的第二预备图案；
步骤S2、在所述衬底基板及金属氧化物半导体层上沉积第一金属层，对该第一金属层进行图案化处理得到与所述第一预备图案另一侧连接的连接块，对所述连接块进行加热处理，从而诱导所述第一预备图案与所述连接块接触的部分导体化；
步骤S3、在所述衬底基板、金属氧化物半导体层及第一金属层上沉积形成栅极绝缘层，在所述栅极绝缘层上沉积第二金属层，对该第二金属层进行图案化处理得到横跨第一预备图案的栅极；
步骤S4、以所述栅极为遮蔽层，从所述衬底基板上方对所述第一预备图案及第二预备图案进行UV光照射，使得第一预备图案对应位于所述栅极两侧且分别连接所述连接块和第二预备图案的部分在UV光照射下导体化形成相间隔的源极和漏极，使得第二预备图案在UV光照射下导体化形成像素电极，使得第一预备图案位于所述源极和漏极之间被所述栅极遮挡的部分形成半导体沟道。
所述步骤S1还包括，在沉积金属氧化物半导体层之前，在所述衬底基板上形成有机光阻凸台，所述第一预备图案在所述衬底基板上对应覆盖所述有机光阻凸台。
所述有机光阻凸台的材料为遮光材料；
所述有机光阻凸台的高度大于2μm。
所述第一金属层与所述金属氧化物半导体层接触的部分为金属诱导层，该金属诱导层的材料为铝。
所述步骤S2中经图案化处理后的第一金属层还包括与所述连接块连接的数据线；
所述步骤S3中经图案化处理后的第二金属层还包括与所述数据线垂直绝缘交叉并与所述栅极连接的栅极线。
本发明还提供一种TFT基板，包括衬底基板及由下至上依次沉积于所述衬底基板上的金属氧化物半导体层、第一金属层、栅极绝缘层、第二金属层；
所述金属氧化物半导体层包括半导体沟道及导体化的源极、漏极、像素电极；
所述第一金属层包括与所述源极连接的连接块；
所述第二金属层包括对应覆盖所述半导体沟道的栅极；
所述像素电极与所述漏极连接，所述源极和漏极分别从半导体沟道两侧连接半导体沟道并由所述半导体沟道间隔开，所述源极和漏极相对的内侧边缘与所述栅极的两侧边缘对齐。
所述的TFT基板还包括设于所述衬底基板与金属氧化物半导体层之间的有机光阻凸台，连接在一起的源极半导体沟道及漏极对应覆盖所述有机光阻凸台。
所述有机光阻凸台的材料为遮光材料；
所述有机光阻凸台的高度大于2μm。
所述第一金属层与所述金属氧化物半导体层接触的部分为金属诱导层，该金属诱导层的材料为铝。
所述第一金属层还包括与所述连接块连接的数据线；
所述第二金属层还包括与所述数据线垂直绝缘交叉并与所述栅极连接的栅极线。
本发明的有益效果：本发明提供的一种TFT基板的制作方法，以栅极为遮蔽层对金属氧化物半导体层进行UV光照射，使金属氧化物半导体层被UV光照射的部分导体化而形成源极、漏极及像素电极，使金属氧化物半导体层被栅极遮挡的部分仍保留半导体性质而形成半导体沟道，本发明通过栅极自对准及金属氧化物半导体层导体化工艺实现了源漏极与栅极的对准，能够有效控制源漏极与栅极的重叠区域，从而减小器件内的寄生电容，降低在信号传输时的电阻电容负载，提高显示品质，且制作方法简单，提高了生产效率。本发明的TFT基板，采用上述TFT基板的制作方法制作形成，能够有效控制源漏极与栅极的重叠区域，从而减小器件内的寄生电容，降低在信号传输时的电阻电容负载，提高显示品质。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其他有益效果显而易见。
附图中，
图1为现有一TFT基板的结构示意图；
图2为本发明的TFT基板的制作方法的流程示意图；
图3为本发明的TFT基板的制作方法的步骤S1的示意图；
图4为本发明的TFT基板的制作方法的步骤S2的示意图；
图5为本发明的TFT基板的制作方法的步骤S3的示意图；
图6为本发明的TFT基板的制作方法的步骤S4的示意图暨本发明的TFT基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明首先提供一种TFT基板的制作方法，包括如下步骤：
步骤S1、如图3所示，提供衬底基板10，在所述衬底基板10上形成有机光阻凸台20，在所述衬底基板10及有机光阻凸台20上沉积金属氧化物半导体层30，对该金属氧化物半导体层30进行图案化处理得到对应覆盖所述有机光阻凸台20的第一预备图案31及与所述第一预备图案31一侧连接的第二预备图案33。
具体地，所述有机光阻凸台20的材料为遮光材料；所述有机光阻凸台20的高度大于2μm。
具体地，所述步骤S1中，所述金属氧化物半导体层30的材料可以为铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)或铟镓锌锡氧化物(IGZTO)；本实施例中，所述金属氧化物半导体层30优选为IGZO。
步骤S2、如图4所示，在所述衬底基板10及金属氧化物半导体层30上沉积第一金属层40，对该第一金属层40进行图案化处理得到数据线45及与两端分别连接数据线45及所述第一预备图案31的连接块41，所述连接块41与第二预备图案33分别连接第一预备图案31的相对两侧，然后对所述连接块41进行加热处理，从而通过高温的连接块41诱导与所述连接块41接触的所述第一预备图案31导体化。
具体地，所述第一金属层40与所述金属氧化物半导体层30接触的部分为能够高温下诱导金属氧化物半导体层30导体化的金属诱导层，该金属诱导层的材料为铝(Al)、镍(Ni)等；本实施例中，所述第一金属层40优选为钼铝堆叠层(Mo/Al)，其中铝层与所述金属氧化物半导体层30接触。
步骤S3、如图5所示，在所述衬底基板10、金属氧化物半导体层30及第一金属层40上沉积形成栅极绝缘层50，在所述栅极绝缘层50上沉积第二金属层60，对该第二金属层60进行图案化处理得到横跨第一预备图案31的栅极61及与所述数据线45垂直绝缘交叉且与所述栅极61连接的栅极线65。
具体地，所述栅极绝缘层50为氧化硅层、氮化硅层或两者的组合。
具体地，所述第二金属层60可以与所述第一金属层40的材料相同或不同。
步骤S4、如图6所示，以所述栅极61为遮蔽层，从所述衬底基板10上方对所述第一预备图案31及第二预备图案32进行UV光照射，使得第一预备图案31对应位于所述栅极61两侧且分别连接所述连接块41和第二预备图案32的部分在UV光照射下导体化形成相间隔的源极71和漏极72，使得第二预备图案32在UV光照射下导体化形成像素电极75，使得第一预备图案31位于所述源极71和漏极72之间被所述栅极61遮挡的部分形成半导体沟道73。
具体地，所述像素电极75具有狭缝(Slit)结构，包括数个间隔分布的条状分支电极，相邻条状分支电极之间形成狭缝。
需要说明的是，由于所述有机光阻凸台20具有一定的厚度且其材料为遮光材料，从而在TFT基板应用于显示面板中时，可以通过有机光阻凸台20避免所述半导体沟道73受到背光影响而使其半导体性质受损，且该凸起的有机光阻凸台20有利于缩小TFT器件在衬底基板10上所占的面积，从而增大TFT基板的开口率。
本发明的TFT基板的制作方法，以栅极61为遮蔽层对金属氧化物半导体层30进行UV光照射，使金属氧化物半导体层30被UV光照射的部分导体化形成源极71、漏极72及像素电极75，而金属氧化物半导体层30被栅极61遮挡的部分仍保留半导体性质而形成半导体沟道73，本发明通过栅极自对准及金属氧化物半导体层导体化工艺实现了源漏极71/72与栅极61的对准，能够有效控制源漏极71/72与栅极61的重叠区域，从而减小寄生电容，提高显示品质，且制作方法简单，提高了生产效率。
请参阅图6，基于上述TFT基板的制作方法，本发明还提供一种TFT基板，采用上述的TFT基板的制作方法制作形成，其具体包括衬底基板10及由下至上依次沉积于所述衬底基板10上的金属氧化物半导体层30、第一金属层40、栅极绝缘层50、第二金属层60。
具体地，所述金属氧化物半导体层30包括半导体沟道73及导体化的源极71、漏极72及像素电极75；
具体地，所述第一金属层40包括数据线45及与两端分别连接数据线45及所述源极71的连接块41，其中，所述源极71与连接块41接触的部分由经加热的高温连接块41诱导而导体化。
具体地，所述第二金属层60包括对应覆盖所述半导体沟道73的栅极61及与所述数据线45垂直绝缘交叉且与所述栅极61连接的栅极线65。
具体地，未被栅极61及连接块41覆盖的源极71、漏极72及像素电极75经由UV光照射而导体化，所述像素电极75与所述漏极72连接，所述源极71和漏极72分别从半导体沟道73两侧连接半导体沟道73并由所述半导体沟道73间隔开，所述源极71和漏极72相对的内侧边缘与所述栅极61的两侧边缘对齐。
具体地，所述的TFT基板还包括设于所述衬底基板10与金属氧化物半导体层30之间的有机光阻凸台20，连接在一起的源极71、半导体沟道73及漏极72对应覆盖所述有机光阻凸台20。
进一步地，所述有机光阻凸台20的材料为遮光材料；所述有机光阻凸台20的高度大于2μm；由于所述有机光阻凸台20具有一定的厚度且其材料为遮光材料，从而在TFT基板应用于显示面板中时，可以通过有机光阻凸台20避免所述半导体沟道73受到背光影响而半导体性质受损，且该凸起的有机光阻凸台20有利于缩小TFT器件在衬底基板10上所占的面积，从而增大TFT基板的开口率。
具体地，所述金属氧化物半导体层30的材料可以为铟镓锌氧化物(IGZO)、铟锌锡氧化物(IZTO)或铟镓锌锡氧化物(IGZTO)；本实施例中，所述金属氧化物半导体层30优选为IGZO。
具体地，所述第一金属层40与所述金属氧化物半导体层30接触的部分为能够高温下诱导金属氧化物半导体层30导体化的金属诱导层，该金属诱导层的材料为铝、镍等；本实施例中，所述第一金属层40优选为钼铝堆叠层(Mo/Al)，其中铝层与所述金属氧化物半导体层30接触。
具体地，所述栅极绝缘层50为氧化硅层、氮化硅层或两者的组合。
具体地，所述第二金属层60可以与所述第一金属层40的材料相同或不同。
具体地，所述像素电极75具有狭缝结构，包括数个间隔分布的条状分支电极，相邻条状分支电极之间形成狭缝。
本发明的TFT基板，采用上述TFT基板的制作方法制作形成，通过栅极自对准及金属氧化物半导体层导体化工艺实现了源漏极71/72与栅极61的对准，能够有效控制源漏极71/72与栅极61的重叠区域，从而减小寄生电容，提高显示品质，且其制作方法简单，提高了生产效率。
综上所述，本发明提供的一种TFT基板的制作方法，以栅极为遮蔽层对金属氧化物半导体层进行UV光照射，使金属氧化物半导体层被UV光照射的部分导体化而形成源极、漏极及像素电极，使金属氧化物半导体层被栅极遮挡的部分仍保留半导体性质而形成半导体沟道，本发明通过栅极自对准及金属氧化物半导体层导体化工艺实现了源漏极与栅极的对准，能够有效控制源漏极与栅极的重叠区域，从而减小器件内的寄生电容，降低在信号传输时的电阻电容负载，提高显示品质，且制作方法简单，提高了生产效率。本发明的TFT基板，采用上述TFT基板的制作方法制作形成，能够有效控制源漏极与栅极的重叠区域，从而减小器件内的寄生电容，降低在信号传输时的电阻电容负载，提高显示品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明后附的权利要求的保护范围。

Claims (10)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤S1、提供衬底基板(10)，在所述衬底基板(10)上沉积金属氧化物半导体层(30)，对该金属氧化物半导体层(30)进行图案化处理得到第一预备图案(31)及与所述第一预备图案(31)一侧连接的第二预备图案(33)；
步骤S2、在所述衬底基板(10)及金属氧化物半导体层(30)上沉积第一金属层(40)，对该第一金属层(40)进行图案化处理得到与所述第一预备图案(31)另一侧连接的连接块(41)，对所述连接块(41)进行加热处理，从而诱导所述第一预备图案(31)与所述连接块(41)接触的部分导体化；
步骤S3、在所述衬底基板(10)、金属氧化物半导体层(30)及第一金属层(40)上沉积形成栅极绝缘层(50)，在所述栅极绝缘层(50)上沉积第二金属层(60)，对该第二金属层(60)进行图案化处理得到横跨第一预备图案(31)的栅极(61)；
步骤S4、以所述栅极(61)为遮蔽层，从所述衬底基板(10)上方对所述第一预备图案(31)及第二预备图案(32)进行UV光照射，使得第一预备图案(31)对应位于所述栅极(61)两侧且分别连接所述连接块(41)和第二预备图案(32)的部分在UV光照射下导体化形成相间隔的源极(71)和漏极(72)，使得第二预备图案(32)在UV光照射下导体化形成像素电极(75)，使得第一预备图案(31)位于所述源极(71)和漏极(72)之间被所述栅极(61)遮挡的部分形成半导体沟道(73)。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S1还包括，在沉积金属氧化物半导体层(30)之前，在所述衬底基板(10)上形成有机光阻凸台(20)，所述第一预备图案(31)在所述衬底基板(10)上对应覆盖所述有机光阻凸台(20)。
3.如权利要求2所述的TFT基板的制作方法，其特征在于，所述有机光阻凸台(20)的材料为遮光材料；
所述有机光阻凸台(20)的高度大于2μm。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述第一金属层(40)与所述金属氧化物半导体层(30)接触的部分为金属诱导层，该金属诱导层的材料为铝。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤S2中经图案化处理后的第一金属层(40)还包括与所述连接块(41)连接的数据线(45)(权利要求里的元件要对应在附图示出)；
所述步骤S3中经图案化处理后的第二金属层(60)还包括与所述数据线(45)垂直绝缘交叉并与所述栅极(61)连接的栅极线(65)。
6.一种TFT基板，其特征在于，包括衬底基板(10)及由下至上依次沉积于所述衬底基板(10)上的金属氧化物半导体层(30)、第一金属层(40)、栅极绝缘层(50)、第二金属层(60)；
所述金属氧化物半导体层(30)包括半导体沟道(73)及导体化的源极(71)、漏极(72)、像素电极(75)；
所述第一金属层(40)包括与所述源极(71)连接的连接块(41)；
所述第二金属层(60)包括对应覆盖所述半导体沟道(73)的栅极(61)；
所述像素电极(75)与所述漏极(72)连接，所述源极(71)和漏极(72)分别从半导体沟道(73)两侧连接半导体沟道(73)并由所述半导体沟道(73)间隔开，所述源极(71)和漏极(72)相对的内侧边缘与所述栅极(61)的两侧边缘对齐。
7.如权利要求6所述的TFT基板，其特征在于，还包括设于所述衬底基板(10)与金属氧化物半导体层(30)之间的有机光阻凸台(20)，连接在一起的源极(71)、半导体沟道(73)及漏极(72)对应覆盖所述有机光阻凸台(20)。
8.如权利要求7所述的TFT基板，其特征在于，所述有机光阻凸台(20)的材料为遮光材料；
所述有机光阻凸台(20)的高度大于2μm。
9.如权利要求6所述的TFT基板，其特征在于，所述第一金属层(40)与所述金属氧化物半导体层(30)接触的部分为金属诱导层，该金属诱导层的材料为铝。
10.如权利要求6所述的TFT基板，其特征在于，所述第一金属层(40)还包括与所述连接块(41)连接的数据线(45)；
所述第二金属层(60)还包括与所述数据线(45)垂直绝缘交叉并与所述栅极(61)连接的栅极线(65)。
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