CN110127752A - 一种稳定的β-CsPbI3钙钛矿薄膜的制备方法 - Google Patents
一种稳定的β-CsPbI3钙钛矿薄膜的制备方法 Download PDFInfo
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- CN110127752A CN110127752A CN201910420068.8A CN201910420068A CN110127752A CN 110127752 A CN110127752 A CN 110127752A CN 201910420068 A CN201910420068 A CN 201910420068A CN 110127752 A CN110127752 A CN 110127752A
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- thin film
- stable
- perovskite thin
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- 239000010409 thin film Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000002904 solvent Substances 0.000 claims abstract description 9
- 239000002243 precursor Substances 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims description 11
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 10
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 9
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims description 7
- 238000004528 spin coating Methods 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 229910017435 S2 In Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 14
- XQPRBTXUXXVTKB-UHFFFAOYSA-M caesium iodide Chemical compound [I-].[Cs+] XQPRBTXUXXVTKB-UHFFFAOYSA-M 0.000 description 11
- 239000010408 film Substances 0.000 description 7
- 238000001228 spectrum Methods 0.000 description 7
- 238000002425 crystallisation Methods 0.000 description 5
- 230000008025 crystallization Effects 0.000 description 4
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- YTRRWZNIWLOHNZ-UHFFFAOYSA-N ethane-1,2-diamine iodic acid Chemical compound C(CN)N.I(=O)(=O)O YTRRWZNIWLOHNZ-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- -1 halogen acids Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- DXZHSXGZOSIEBM-UHFFFAOYSA-M iodolead Chemical compound [Pb]I DXZHSXGZOSIEBM-UHFFFAOYSA-M 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/006—Compounds containing, besides lead, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
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CN201910420068.8A CN110127752B (zh) | 2019-05-20 | 2019-05-20 | 一种稳定的β-CsPbI3钙钛矿薄膜的制备方法 |
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CN201910420068.8A CN110127752B (zh) | 2019-05-20 | 2019-05-20 | 一种稳定的β-CsPbI3钙钛矿薄膜的制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN110127752A true CN110127752A (zh) | 2019-08-16 |
CN110127752B CN110127752B (zh) | 2020-07-14 |
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CN201910420068.8A Active CN110127752B (zh) | 2019-05-20 | 2019-05-20 | 一种稳定的β-CsPbI3钙钛矿薄膜的制备方法 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111129319A (zh) * | 2019-12-25 | 2020-05-08 | 上海交通大学 | 一种CsnFA1-nPbX3钙钛矿薄膜的制备方法 |
CN112382724A (zh) * | 2020-10-30 | 2021-02-19 | 中国科学院青岛生物能源与过程研究所 | 一种制备钙钛矿薄膜的方法 |
CN112960691A (zh) * | 2019-11-27 | 2021-06-15 | 本田技研工业株式会社 | 用于短波ir设备的全无机钙钛矿材料 |
CN113846373A (zh) * | 2020-06-28 | 2021-12-28 | 厦门稀土材料研究所 | 一种钙钛矿CsPbX3纳米晶及其制备方法和应用 |
CN114988461A (zh) * | 2022-05-09 | 2022-09-02 | 武汉理工大学 | 一种无机CsPbI3钙钛矿薄膜及其制备方法 |
LU501865B1 (en) * | 2022-01-21 | 2023-07-24 | Univ Hubei Arts & Science | An efficient inorganic hybrid perovskite ink and its application |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449979A (zh) * | 2016-08-30 | 2017-02-22 | 上海交通大学 | 通过双氨基有机物制备热稳定钙钛矿CsPbI3的方法 |
-
2019
- 2019-05-20 CN CN201910420068.8A patent/CN110127752B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449979A (zh) * | 2016-08-30 | 2017-02-22 | 上海交通大学 | 通过双氨基有机物制备热稳定钙钛矿CsPbI3的方法 |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112960691A (zh) * | 2019-11-27 | 2021-06-15 | 本田技研工业株式会社 | 用于短波ir设备的全无机钙钛矿材料 |
US11518688B2 (en) | 2019-11-27 | 2022-12-06 | Honda Motor Co., Ltd. | All inorganic perovskite materials for short wave IR devices |
CN112960691B (zh) * | 2019-11-27 | 2023-08-04 | 本田技研工业株式会社 | 用于短波ir设备的全无机钙钛矿材料 |
CN111129319A (zh) * | 2019-12-25 | 2020-05-08 | 上海交通大学 | 一种CsnFA1-nPbX3钙钛矿薄膜的制备方法 |
CN111129319B (zh) * | 2019-12-25 | 2023-10-03 | 上海交通大学 | 一种CsnFA1-nPbX3钙钛矿薄膜的制备方法 |
CN113846373A (zh) * | 2020-06-28 | 2021-12-28 | 厦门稀土材料研究所 | 一种钙钛矿CsPbX3纳米晶及其制备方法和应用 |
CN112382724A (zh) * | 2020-10-30 | 2021-02-19 | 中国科学院青岛生物能源与过程研究所 | 一种制备钙钛矿薄膜的方法 |
LU501865B1 (en) * | 2022-01-21 | 2023-07-24 | Univ Hubei Arts & Science | An efficient inorganic hybrid perovskite ink and its application |
WO2023137891A1 (zh) * | 2022-01-21 | 2023-07-27 | 湖北文理学院 | 一种钙钛矿墨水以及其应用 |
CN114988461A (zh) * | 2022-05-09 | 2022-09-02 | 武汉理工大学 | 一种无机CsPbI3钙钛矿薄膜及其制备方法 |
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Publication number | Publication date |
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CN110127752B (zh) | 2020-07-14 |
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Effective date of registration: 20220215 Address after: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee after: Zhao Yixin Address before: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee before: SHANGHAI JIAO TONG University |
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Effective date of registration: 20220921 Address after: 201109 Building 1, No. 600, Jianchuan Road, Minhang District, Shanghai Patentee after: Shanghai Calcium Crystal Technology Co.,Ltd. Address before: 200240 No. 800, Dongchuan Road, Shanghai, Minhang District Patentee before: Zhao Yixin |
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