CN106972104A - 一种碱金属氟化物掺杂的钙钛矿太阳电池制备方法 - Google Patents
一种碱金属氟化物掺杂的钙钛矿太阳电池制备方法 Download PDFInfo
- Publication number
- CN106972104A CN106972104A CN201710426090.4A CN201710426090A CN106972104A CN 106972104 A CN106972104 A CN 106972104A CN 201710426090 A CN201710426090 A CN 201710426090A CN 106972104 A CN106972104 A CN 106972104A
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- Prior art keywords
- layer
- alkali metal
- solar cell
- metal fluoride
- perovskite
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- Granted
Links
- 229910001515 alkali metal fluoride Inorganic materials 0.000 title claims abstract description 33
- 238000002360 preparation method Methods 0.000 title claims abstract description 26
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 80
- 238000004528 spin coating Methods 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 13
- XDXWNHPWWKGTKO-UHFFFAOYSA-N 207739-72-8 Chemical compound C1=CC(OC)=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 XDXWNHPWWKGTKO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 230000000903 blocking effect Effects 0.000 claims abstract description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000027756 respiratory electron transport chain Effects 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 12
- 238000003756 stirring Methods 0.000 claims description 11
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 9
- 150000002596 lactones Chemical class 0.000 claims description 6
- RQQRAHKHDFPBMC-UHFFFAOYSA-L lead(ii) iodide Chemical compound I[Pb]I RQQRAHKHDFPBMC-UHFFFAOYSA-L 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000002002 slurry Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000005352 clarification Methods 0.000 claims description 4
- 229910003002 lithium salt Inorganic materials 0.000 claims description 4
- 159000000002 lithium salts Chemical class 0.000 claims description 4
- 238000002207 thermal evaporation Methods 0.000 claims description 4
- 239000012046 mixed solvent Substances 0.000 claims description 3
- 150000002220 fluorenes Chemical class 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 2
- 238000009738 saturating Methods 0.000 claims description 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 8
- 239000000243 solution Substances 0.000 description 31
- 210000004027 cell Anatomy 0.000 description 27
- 239000010408 film Substances 0.000 description 10
- 230000008859 change Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- RDOXTESZEPMUJZ-UHFFFAOYSA-N anisole Chemical class COC1=CC=CC=C1 RDOXTESZEPMUJZ-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- HWSZZLVAJGOAAY-UHFFFAOYSA-L lead(II) chloride Chemical compound Cl[Pb]Cl HWSZZLVAJGOAAY-UHFFFAOYSA-L 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 210000002381 plasma Anatomy 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
- H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
- H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
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CN201710426090.4A CN106972104B (zh) | 2017-06-08 | 2017-06-08 | 一种碱金属氟化物掺杂的钙钛矿太阳电池制备方法 |
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CN201710426090.4A CN106972104B (zh) | 2017-06-08 | 2017-06-08 | 一种碱金属氟化物掺杂的钙钛矿太阳电池制备方法 |
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CN106972104A true CN106972104A (zh) | 2017-07-21 |
CN106972104B CN106972104B (zh) | 2019-04-30 |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109686843A (zh) * | 2018-11-30 | 2019-04-26 | 苏州协鑫纳米科技有限公司 | 钙钛矿太阳能电池及其制备方法 |
WO2019106370A1 (en) * | 2017-11-29 | 2019-06-06 | Cambridge Enterprise Limited | Passivating potassium halide in perovskite optoelectronic devices |
CN110085744A (zh) * | 2019-04-10 | 2019-08-02 | 北京大学 | 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备 |
CN110416416A (zh) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | 一种氟和铷掺杂钙钛矿太阳能电池及制备方法 |
CN111769197A (zh) * | 2020-07-17 | 2020-10-13 | 吉林大学 | 钙钛矿太阳能电池及其制备方法 |
CN114180682A (zh) * | 2021-12-13 | 2022-03-15 | 中国科学院生态环境研究中心 | 一种碱金属-RuO2-TiO2涂层钛电极及其制备方法 |
CN117337119A (zh) * | 2023-12-01 | 2024-01-02 | 浙江省白马湖实验室有限公司 | 一种钙钛矿太阳能电池电子传输介孔层的制备方法及应用 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105070834B (zh) * | 2015-07-28 | 2016-06-01 | 华中科技大学 | 一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法 |
KR20170001536A (ko) * | 2015-06-25 | 2017-01-04 | 재단법인 멀티스케일 에너지시스템 연구단 | 할로겐화 납 어덕트 화합물 및 이를 이용한 페로브스카이트 소자 |
CN106449979A (zh) * | 2016-08-30 | 2017-02-22 | 上海交通大学 | 通过双氨基有机物制备热稳定钙钛矿CsPbI3的方法 |
-
2017
- 2017-06-08 CN CN201710426090.4A patent/CN106972104B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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KR20170001536A (ko) * | 2015-06-25 | 2017-01-04 | 재단법인 멀티스케일 에너지시스템 연구단 | 할로겐화 납 어덕트 화합물 및 이를 이용한 페로브스카이트 소자 |
CN105070834B (zh) * | 2015-07-28 | 2016-06-01 | 华中科技大学 | 一种基于掺杂型NiO空穴传输层的钙钛矿太阳能电池及其制备方法 |
CN106449979A (zh) * | 2016-08-30 | 2017-02-22 | 上海交通大学 | 通过双氨基有机物制备热稳定钙钛矿CsPbI3的方法 |
Non-Patent Citations (1)
Title |
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JINGJING CHANG等: ""Enhancing the photovoltaic performance of planar heterojunction perovskite solar cells by doping the perovskite layer with alkali metal ions"", 《JOURNAL OF MATERIALS CHEMISTRY A》 * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019106370A1 (en) * | 2017-11-29 | 2019-06-06 | Cambridge Enterprise Limited | Passivating potassium halide in perovskite optoelectronic devices |
CN109686843A (zh) * | 2018-11-30 | 2019-04-26 | 苏州协鑫纳米科技有限公司 | 钙钛矿太阳能电池及其制备方法 |
CN109686843B (zh) * | 2018-11-30 | 2023-05-26 | 昆山协鑫光电材料有限公司 | 钙钛矿太阳能电池及其制备方法 |
CN110085744A (zh) * | 2019-04-10 | 2019-08-02 | 北京大学 | 有效固定有机阳离子的钙钛矿薄膜及太阳能电池的制备 |
CN110416416A (zh) * | 2019-06-26 | 2019-11-05 | 西交利物浦大学 | 一种氟和铷掺杂钙钛矿太阳能电池及制备方法 |
CN111769197A (zh) * | 2020-07-17 | 2020-10-13 | 吉林大学 | 钙钛矿太阳能电池及其制备方法 |
CN111769197B (zh) * | 2020-07-17 | 2022-10-21 | 吉林大学 | 钙钛矿太阳能电池及其制备方法 |
CN114180682A (zh) * | 2021-12-13 | 2022-03-15 | 中国科学院生态环境研究中心 | 一种碱金属-RuO2-TiO2涂层钛电极及其制备方法 |
CN117337119A (zh) * | 2023-12-01 | 2024-01-02 | 浙江省白马湖实验室有限公司 | 一种钙钛矿太阳能电池电子传输介孔层的制备方法及应用 |
CN117337119B (zh) * | 2023-12-01 | 2024-02-23 | 浙江省白马湖实验室有限公司 | 一种钙钛矿太阳能电池电子传输介孔层的制备方法及应用 |
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Effective date of registration: 20180808 Address after: 475000 No. 85, Ming Lun Street, Shun He District, Kaifeng, Henan. Applicant after: Henan University Address before: 455002 436 string Road, Anyang Development Zone, Henan Applicant before: Anyang Normal University |
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