CN110085565A - 功率器件外壳端子、外壳以及加工工艺 - Google Patents
功率器件外壳端子、外壳以及加工工艺 Download PDFInfo
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4885—Wire-like parts or pins
- H01L21/4896—Mechanical treatment, e.g. cutting, bending
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- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
- H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/49—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions wire-like arrangements or pins or rods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
- H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
Abstract
本发明提出了功率器件外壳端子、外壳以及加工工艺,包括一体成型的水平部、折弯部和竖直部,所述水平部和竖直部一体成型,所述水平部的厚度大于竖直部和折弯部,在水平部,即焊接位置增加厚度,增加的厚度范围大于0.1cm,本装置金属端子头部的厚度不变,将底部的焊接位置增设增厚层,达到足以承受焊接过程中的能量,解决焊接不良的问题。
Description
技术领域
本发明涉及半导体技术领域,尤其涉及功率器件及IGBT外壳端子、外壳以及加工工艺。
背景技术
如专利公告号为CN 108461484 A的发明公开了一种高可靠性功率器件模块的封装结构及加工工艺,其加工方式是在整个面板上设置基层铜板,后通过铝线或者铜线或者金线通过超声波焊接机将功率器件芯片与基层铜板进行定位,整块的铜板大部分都没有被用到,成本较高。
同时,在超声波焊接过程中,现有技术中,功率器件的端子填埋在塑料外壳里的时候,端子与外壳结合在了一起,但是金属与塑料的特性不一样,所以焊接位置的底部不会与注塑百分之百贴在一起,会产生空洞,而且焊接位置的厚度不能承受相应的焊接所散发出来的能量,就会产生焊接能量通过那个空洞散开,而达到焊接不良的效果。
发明内容
为解决上述技术问题,本发明提出了一种功率器件外壳端子,包括一体成型的水平部、折弯部和竖直部,所述水平部和竖直部一体成型,所述水平部的厚度大于竖直部和折弯部。
一种功率器件外壳端子,包括水平部、折弯部和竖直部,所述竖直部端部设有安装位,所述安装位厚度小于所述水平部、折弯部和竖直部。
一种功率器件外壳,包括矩形框体,所述矩形框体中心设有功率器件放置位,所述矩形框体上设有框形预埋件,所述框形预埋件内嵌有金属端子式端子,所述金属端子式端子为上述的端子。
优选的,所述矩形框体内圈设有放置槽,所述框形预埋件位于所述放置槽上,所述放置槽内排列设置有矩形浅槽。
优选的,所述竖直部穿过所述框形预埋件,所述水平部嵌于所述矩形浅槽内,且上表面突出于所述矩形浅槽。
优选的,所述矩形框体两端设有定位孔。
优选的,所述竖直部之间嵌有陶瓷块。
一种功率器件外壳端子加工工艺,包括以下步骤:
S1:端子冲压,取异形板带通过冲压成型,异形板带为楔形结构,较厚位置冲压成水平部;或取普通板带,在冲压成型同时,将金属端子部施加压力使其厚度减小;
S2:折弯形成竖直部和水平部;
S3:将冲压成型的端子进行埋件注塑,形成封装框架。
优选的,所述水平部通过铆接或焊接的方式加厚。
本发明提出的功率器件封装框架有以下有益效果:本装置端子金属端子部的厚度不变,将底部的焊接位置增设增厚层,达到足以承受焊接过程中的能量,解决焊接不良的问题。
附图说明
为了更清楚地说明本发明实施例中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍。
图1为本发明的功率器件外壳立体结构示意图;
图2为图1的俯视图;
图3为本发明的实施例1的功率器件外壳端子的示意图;
图4为本发明的实施例2的功率器件外壳端子的示意图;
图5为本发明的冲压工艺示意图;
图6为普通端子示意图;
图7为本发明的功率器件外壳端子的示意图;
图8为本发明的功率器件外壳端子的示意图;
其中,1、矩形框体;2、功率器件放置位;3、框形预埋件;4、金属端子式端子;5、水平部;6、竖直部;7、增厚层;8、放置槽;9、矩形浅槽;10、定位孔;11、陶瓷块;12、功率器件;13、铝丝;14、安装位。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述。
实施例1
一种功率器件外壳端子,包括一体成型的水平部5、折弯部和竖直部6,所述水平部5和竖直部6一体成型,所述水平部5的厚度大于竖直部6和折弯部,在水平部,即焊接位置增加厚度,增加的厚度范围大于0.1cm。
实施例2
一种功率器件外壳端子,包括水平部5、折弯部和竖直部6,所述竖直部端部设有安装位14,所述安装位14厚度小于所述水平部、折弯部和竖直部,安装位14用于使用者安装功率器件,求位置的厚度增大,增大至少0.1cm。
端子如图6所示,A处为用户使用处,B处为焊接位置。
实施例3
如图1所示,本发明提出了一种功率器件外壳,包括矩形框体1,所述矩形框体1中心设有功率器件放置位2,本装置矩形结构,功率器件放置于中心位置,并通过铝线(或者铜线,金线等)在键合焊接部位产生摩擦的瞬间把铝丝13(或者铜线,金线等)与焊板产生冶金结合在一起,所述矩形框体1上设有框形预埋件3,所述框形预埋件3内嵌有金属端子式端子4,框形预埋件3与金属端子式端子4通过注塑填埋的形式固定在一起,为了防止预埋件与金属端子式端子4之间有空洞,导致能量消耗,进而导致焊接不牢靠的问题,所述金属端子式端子实施例1或者实施例2中的端子,增厚层7能够有效承载焊接时的能量,防止能量散出,保证后续焊接功率器件12时焊接牢靠性增加。
要说明的是,本申请适用的功率器件可以是IGBT等或者其他功率器件。
本申请的保护范围在于:铝丝焊接部位比金属端子头部厚,水平部即为铝丝焊接部。
金属端子头部即为用户使用部。
所述矩形框体1内圈设有放置槽8,所述框形预埋件3位于所述放置槽8上,所述放置槽8设有排列设置有矩形浅槽9,金属端子式端子4具体的位置为,所述竖直部6穿过所述框形预埋件3,所述水平部5嵌于所述矩形浅槽9内,且上表面突出于所述矩形浅槽9,通过设置矩形浅槽9有效将相邻的水平部5分隔,防止水平部5误操作造成短路。
所述矩形框体1两端设有定位孔10,用于在焊接功率器件时固定本框架,提高稳定性。
为了增加功率器件芯片12的散热性能,在所述竖直部6之间嵌有陶瓷块11,所述陶瓷块11为绝缘陶瓷块11,陶瓷块11压于相邻的矩形浅槽9之间,并且与相邻的水平部5侧壁贴合。
一种功率器件外壳端子加工工艺,包括以下步骤:
S1:端子冲压,取异形板带通过冲压成型,异形板带为楔形结构,较厚位置冲压成水平部;或取普通板带,在冲压成型同时,将金属端子部施加压力使其厚度减小;
S2:折弯形成竖直部和水平部;
S2:将冲压成型的端子进行埋件注塑,形成封装框架。
所述水平部通过铆接或焊接的方式加厚。
对实施例的多种修改对本领域的专业技术人员来说将是显而易见的,本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下,在其它实施例中实现。因此,本发明将不会被限制于本文所示的这些实施例,而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。
Claims (9)
1.一种功率器件外壳端子,其特征在于,包括一体成型的水平部、折弯部和竖直部,所述水平部和竖直部一体成型,所述水平部的厚度大于竖直部和折弯部。
2.一种功率器件外壳端子,其特征在于,包括水平部、折弯部和竖直部,所述竖直部端部设有安装位,所述安装位厚度小于所述水平部、折弯部和竖直部。
3.一种功率器件外壳,其特征在于,包括矩形框体,所述矩形框体中心设有功率器件放置位,所述矩形框体上设有框形预埋件,所述框形预埋件内嵌有针式端子,所述针式端子为权利要求1或权利要求2中所述的端子。
4.根据权利要求3所述的功率器件外壳,其特征在于,所述矩形框体内圈设有放置槽,所述框形预埋件位于所述放置槽上,所述放置槽内排列设置有矩形浅槽。
5.根据权利要求3所述的功率器件外壳,其特征在于,所述竖直部穿过所述框形预埋件,所述水平部嵌于所述矩形浅槽内,且上表面突出于所述矩形浅槽。
6.根据权利要求4所述的功率器件外壳,其特征在于,所述矩形框体两端设有定位孔。
7.根据权利要求3所述的功率器件外壳,其特征在于,所述竖直部之间嵌有陶瓷块。
8.一种功率器件外壳端子加工工艺,其特征在于,包括以下步骤:
S1:端子冲压,取异形板带通过冲压成型,异形板带为楔形结构,较厚位置冲压成水平部;或取普通板带,在冲压成型同时,将针部施加压力使其厚度小于水平部;
S2:折弯形成竖直部和水平部;
S2:将冲压成型的端子进行埋件注塑,形成封装框架。
9.根据权利要求8所述的功率器件外壳,其特征在于,所述水平部通过铆接或焊接的方式加厚。
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US6011302A (en) * | 1997-05-29 | 2000-01-04 | Fuji Electric Co., Ltd. | Semiconductor device with reduced amount of sealing resin |
JP2013033874A (ja) * | 2011-08-03 | 2013-02-14 | Mitsubishi Electric Corp | パワーモジュール |
US20140370663A1 (en) * | 2013-06-18 | 2014-12-18 | Infineon Technologies Ag | Method for Producing a Semiconductor Module |
CN105406236A (zh) * | 2015-11-27 | 2016-03-16 | 南京银茂微电子制造有限公司 | 一种功率模块的插拔式端子 |
US20170330810A1 (en) * | 2016-05-16 | 2017-11-16 | Mitsubishi Electric Corporation | Semiconductor device |
CN209785924U (zh) * | 2019-06-06 | 2019-12-13 | 昆山铼铄精密五金有限公司 | 功率器件外壳端子、外壳 |
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Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6011302A (en) * | 1997-05-29 | 2000-01-04 | Fuji Electric Co., Ltd. | Semiconductor device with reduced amount of sealing resin |
JP2013033874A (ja) * | 2011-08-03 | 2013-02-14 | Mitsubishi Electric Corp | パワーモジュール |
US20140370663A1 (en) * | 2013-06-18 | 2014-12-18 | Infineon Technologies Ag | Method for Producing a Semiconductor Module |
CN105406236A (zh) * | 2015-11-27 | 2016-03-16 | 南京银茂微电子制造有限公司 | 一种功率模块的插拔式端子 |
US20170330810A1 (en) * | 2016-05-16 | 2017-11-16 | Mitsubishi Electric Corporation | Semiconductor device |
CN209785924U (zh) * | 2019-06-06 | 2019-12-13 | 昆山铼铄精密五金有限公司 | 功率器件外壳端子、外壳 |
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