CN110073483A - 样品保持件 - Google Patents
样品保持件 Download PDFInfo
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- CN110073483A CN110073483A CN201780075442.4A CN201780075442A CN110073483A CN 110073483 A CN110073483 A CN 110073483A CN 201780075442 A CN201780075442 A CN 201780075442A CN 110073483 A CN110073483 A CN 110073483A
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- 239000000919 ceramic Substances 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 238000010438 heat treatment Methods 0.000 claims abstract description 40
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 238000010276 construction Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 description 7
- 239000004615 ingredient Substances 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 206010037660 Pyrexia Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000005619 thermoelectricity Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
- H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
- H05B3/26—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base
- H05B3/265—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor mounted on insulating base the insulating base being an inorganic material, e.g. ceramic
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
- H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Investigating Or Analyzing Materials Using Thermal Means (AREA)
Abstract
样品保持件具备:陶瓷基板,一个主面是样品保持面;发热电阻体,被设置于该陶瓷基板的内部或者另一个主面;金属部件,隔着接合层而被设置为覆盖所述陶瓷基板的所述另一个主面,具有在一个主面和另一个主面开口的贯通孔;导线端子,被插入到所述金属部件;和导通部,被设置于所述接合层的内部,将所述发热电阻体与所述导线端子电连接,并且具有从所述陶瓷基板的所述另一个主面分离并在沿着所述另一个主面的方向延伸的区域。
Description
技术领域
本公开涉及样品保持件。
背景技术
作为用于半导体制造装置等的样品保持件,例如已知JP特开2016-103560号公报(以下,称为专利文献1)所述的样品保持件。专利文献1所述的样品保持件具备:在上表面具有样品保持面的基体、被设置于基体的下表面的发热电阻体、和经由接合层而接合于基体的下表面的支承体。近年来,样品保持件需要样品保持面中的进一步的均热性的提高。
发明内容
本公开的一方式的样品保持件具备:陶瓷基板,一个主面是样品保持面;发热电阻体,被设置于该陶瓷基板的内部或者另一个主面;金属部件,隔着接合层而被设置为覆盖所述陶瓷基板的所述另一个主面,具有在一个主面和另一个主面开口的贯通孔;导线端子,被插入到所述金属部件;和导通部,被设置于所述接合层的内部,将所述发热电阻体与所述导线端子电连接,并且具有从所述陶瓷基板的所述另一个主面分离并在沿着所述另一个主面的方向延伸的区域。
附图说明
图1是表示样品保持件的一个例子的剖视图。
图2是从下方观察样品保持件的一个例子之中的导通部的图。
图3是表示样品保持件的另一个例子的剖视图。
图4是表示样品保持件的另一个例子之中的导通部以及膜状部件的剖视图。
图5是从上方观察样品保持件的另一个例子之中的导通部以及膜状部件的图。
图6是从下方观察样品保持件的另一个例子之中的导通部以及膜状部件的图。
图7是从下方观察样品保持件的另一个例子之中的导通部的图。
具体实施方式
图1是表示样品保持件10的一个例子的剖视图。如图1所示,本例的样品保持件10具备:一个主面是样品保持面11的陶瓷基板1、具有金属且在上表面覆盖陶瓷基板1的另一个主面的金属部件4、将陶瓷基板1的另一个主面以及金属部件4的一个主面接合的接合层5。此外,样品保持件10具备:设置于陶瓷基板1的内部或者另一个主面的发热电阻体2、和设置于陶瓷基板1的内部的吸附电极3。另外,以下,也可能将“一个主面”作为“上表面”,将“另一个主面”作为“下表面”而进行说明,但这是为了有助于理解的表现,并不限定样品保持件10的使用方法。
陶瓷基板1是在上表面具有样品保持面11的板状的部件。陶瓷基板1在上表面的样品保持面11,例如保持硅晶片等的样品。样品保持件10是俯视时的形状为圆形状的部件。陶瓷基板1例如具有氧化铝、氮化铝、氮化硅或者氧化钇等陶瓷材料。在陶瓷基板1的下表面,设置发热电阻体2。陶瓷基板1的尺寸例如能够将直径设定为200~500mm,将厚度设定为2~15mm。
作为使用陶瓷基板1来保持样品的方法,能够使用各种方法,但本例的样品保持件10通过静电力来保持样品。因此,样品保持件10在陶瓷基板1的内部具备吸附电极3。吸附电极3由2个电极构成。2个电极的一个与电源的正极连接,另一个与负极连接。2个电极分别形成为大致半圆板状,在陶瓷基板1的内部配置为半圆的弦彼此对置。这2个电极合起来,吸附电极3整体的外形成为圆形状。基于该吸附电极3整体的圆形状的外形的中心被设定为与同样为圆形状的陶瓷基板1的外形的中心相同。吸附电极3例如具有铂、钨或者钼等的金属材料。
发热电阻体2是用于对在陶瓷基板1的上表面的样品保持面11保持的样品进行加热的部件。发热电阻体2能够被设置于陶瓷基板1的内部或者下表面。在本例的样品保持件10中,发热电阻体2被设置于陶瓷基板1的下表面。通过向发热电阻体2施加电压,能够使发热电阻体2发热。由发热电阻体2发出的热在陶瓷基板1的内部传递,到达陶瓷基板1的上表面的样品保持面11。由此,能够对保持于样品保持面11的样品进行加热。
发热电阻体2是具有多个折回部的线状的图案,被设置于陶瓷基板1的下表面的几乎整面。由此,能够抑制在样品保持件10的上表面热分布产生偏差。
发热电阻体2包含导体成分以及玻璃成分。作为导体成分,例如包含银钯、铂、铝或者金等的金属材料。为了抑制玻璃成分发泡,也可以选择大气中可烧结的金属来作为金属材料。此外,作为玻璃成分,包含硅、铝、铋、钙、硼以及锌等的材料的氧化物。此外,在发热电阻体2被设置于陶瓷基板1的内部的情况下,导体成分也可以是钨或者碳化钨等。
样品保持件10的温度控制中能够使用以下的方法。具体而言,通过使陶瓷基板1与热电偶接触从而能够测量温度。此外,通过使陶瓷基板1与测温电阻体接触来测量电阻,也能够测量发热电阻体2的温度。基于如以上那样测量的发热电阻体2的温度,调整施加于发热电阻体2的电压,从而能够控制发热电阻体2的发热以使得样品保持件10的温度恒定。
金属部件4为了支承陶瓷基板1而被设置。金属部件4具有金属,在上表面覆盖陶瓷基板1的下表面。陶瓷基板1的下表面与金属部件4的上表面通过接合层5而被接合。构成金属部件4的金属并未被特别限制。这里所谓的“金属”,也包含陶瓷与金属的复合材料以及纤维强化金属等的、包含金属的复合材料。一般地,在暴露于卤素类的腐蚀性气体等的环境下使用样品保持件10的情况下,作为构成金属部件4的金属,也可以使用铝(A1)、铜(Cu)、不锈钢或者镍(Ni)或者这些金属的合金。此外,金属部件4的构造并未被特别限定,但也可以具备用于使气体或者液体等热介质循环的冷却用的流路。在该情况下,作为热介质,能够使用水或者硅油等液体或者氦气(He)或者氮气(N2)等气体。
接合层5为了将陶瓷基板1与金属部件4接合而被设置。接合层5将陶瓷基板1的下表面以及金属部件4的上表面接合。接合层5的厚度例如被设定为0.1~1mm左右。作为接合层,例如能够使用环氧树脂等的树脂材料。
导通部6以及导线端子7是用于向发热电阻体2提供电力的部件。导通部6的一端与发热电阻体2连接,并且另一端与导线端子7连接。导线端子7的一端与导通部6连接,并且另一端与外部电源连接。作为导通部6,例如能够使用铜等具有电传导性的金属材料。作为导线端子7,例如能够使用镍等具有电传导性的金属材料。
更具体而言,金属部件4具有在上表面和下表面开口的贯通孔41。接合层5在下表面具有凹部51。金属部件4的贯通孔41与接合层5的凹部51相连以使得各自的内周面连续。导通部6被设置于接合层5的内部,具有沿着陶瓷基板1的下表面的部分。作为导通部6之中沿着陶瓷基板1的下表面的部分,例如能够使用金属板。此外,在本例中,导通部6与发热电阻体2通过通孔导体61而连接。作为通孔导体,例如能够使用焊料或者钎料等的导电性材料。
另外,在本例中,导通部6的整体沿着陶瓷基板1的下表面,但并不局限于此。例如,导通部6也可以具有沿着陶瓷基板1的下表面的部分和在上下方向延伸的部分这两者。在这样的情况下,发热电阻体2与导通部6也可以不隔着通孔导体61而直接连接。另外,这里所谓的上下方向,是指相对于陶瓷基板1的上表面垂直的方向。
如图2所示,导通部6也可以例如在观察沿着陶瓷基板1的下表面的面时,具有带形状。更具体而言,导通部6也可以大部分是带形状,并且具有与通孔导体61连接的第1区域62、以及与导线端子7连接的第2区域63。并且,也可以在第1区域62与第2区域63之间,具有比第1区域62以及第2区域63细的第3区域64。通过导通部6具有第3区域64,在将第1区域62与发热电阻体2通过焊料等通孔导体61而连接时,能够减少固化前的通孔导体61润湿到第2区域63的可能性。由此,能够提高导通部6与发热电阻体2的连接可靠性。
导通部6将通孔导体61与导线端子7连接。导通部6之中沿着陶瓷基板1的下表面的部分在凹部51的底面露出。换言之,导通部6的另一端在凹部51的底面露出。
导线端子7从金属部件4的下表面侧插入到金属部件4的贯通孔41,达到凹部51的底面。导线端子7为了确保与金属部件4的绝缘性,隔开间隔地被设置以使得不与金属部件4接触。导线端子7在凹部51的底面连接于导通部6。导线端子7与导通部6的连接中,例如能够使用具有电传导性的接合材料。作为接合材料,例如能够使用钎料、焊料。
在本例的样品保持件10中,具备:陶瓷基板1,一个主面是样品保持面11;发热电阻体2,被设置于陶瓷基板1的内部或者另一个主面;金属部件4,隔着接合层5而被设置为覆盖陶瓷基板1的另一个主面,具有在一个主面和另一个主面开口的贯通孔41;导线端子7,被插入到金属部件4;和导通部6,被设置于接合层5的内部,将发热电阻体2与导线端子7电连接,并且具有从陶瓷基板1的另一个主面分离并在沿着另一个主面的方向延伸的区域。通过导通部6具有从陶瓷基板1的另一个主面分离并在沿着另一个主面的方向延伸的区域,在导通部6中产生的发热能够难以传导至陶瓷基板1。由此,能够提高样品保持面11中的均热性。
此外,也可以导通部6的整体是被接合层5覆盖的结构。由此,能够使导通部6与外部绝缘,因此能够提高样品保持件10可靠性。另外,这里所谓的“导通部6的整体被接合层5覆盖”,严格来讲不必是整体被接合层5覆盖。具体而言,在导通部6与发热电阻体2的连接部、导通部6与导线端子7的连接部、以及其他需要电连接的部位,也可以存在为了进行电连接而局部未被接合层5覆盖的部分。
此外,接合层5的热传导率也可以小于陶瓷基板1。由此,能够减少导通部6中产生的热量经由接合层5而传导至陶瓷基板1的情况。其结果,能够提高样品保持面11中的均热性。
此外,如图3所示,也可以发热电阻体2被设置于陶瓷基板1的下表面,接合层5是具有接合于陶瓷基板1的第1层52和接合于金属部件4的第2层53的层叠构造,并且第1层52的弹性模量大于第2层53。由此,由于能够由弹性模量较大的第1层52覆盖发热电阻体2从而稳固地约束陶瓷基板1和发热电阻体2,因此能够减少热循环下在发热电阻体2产生剥离的可能性。此外,通过由弹性模量较小的第2层53接合金属部件4,从而能够减少在热膨胀较大的金属部件4与接合层5之间产生的热应力。作为第1层52,例如能够使用环氧树脂,作为第2层53,例如能够使用硅酮树脂。
此外,导通部6也可以被设置于第1层52与第2层53之间。通过在第1层52与第2层53之间设置导通部6,相比于在第1层52的内部设置导通部6的情况、或者在第2层53的内部设置导通部6的情况下,能够减少接合层5的内部的界面的面积。因此,在降低样品保持面11的温度时,能够将陶瓷基板1中残留的热量迅速释放到金属部件4,因此能够提高样品保持件10的降温速度。
此外,如图4所示,也可以导通部6的至少一部分被热传导率小于接合层5的膜状部件8覆盖。由此,能够减少导通部6中产生的热量经由接合层5而传导至陶瓷基板1的可能性。作为膜状部件8,例如能够使用聚酰亚胺的薄膜。
膜状部件8能够卷绕并安装于接合层5。此外,膜状部件8也可以由多个部件构成。具体而言,也可以膜状部件8由具有凹状部81以及在凹状部81的两侧延伸的凸缘部82的2个部件构成,并且由2个部件的凹状部81覆盖导通部6。此时,能够通过将凸缘部82彼此固定来稳固地固定2个部件,因此能够减少膜状部件8从导通部6剥离的可能性。
更具体而言,例如,如图5以及图6所示,也可以导通部6具有第1区域62、第2区域63以及第3区域64,第2区域63的下表面具有连接于导线端子7的连接区域65。此时,也可以第2区域63之中连接区域65以外被膜状部件8覆盖。另外,在图5以及图6中,为了明确膜状部件8与导通部6的位置关系,透过表示膜状部件8。通过第2区域63之中连接区域65以外被膜状部件8覆盖,从而在将第1区域62与发热电阻体2由焊料等通孔导体61连接时,能够减少固化前的通孔导体61润湿到第2区域63的可能性。由此,能够提高导通部6与发热电阻体2的连接可靠性。
此外,如图7所示,也可以在第1区域62的下表面,设置低热传导部件66。作为低热传导部件66,可使用热传导率小于接合层5的部件。作为热传导率小于接合层5的部件,例如能够使用聚酰亚胺等。由此,能够减少发热电阻体2中产生的热在通孔导体61以及第1区域62中传导并传导至接合层5的可能性。其结果,能够提高样品保持面11的均热性。另外,在图7中,第1区域62的下表面之中的一部分被低热传导部件66覆盖,但并不局限于此。例如,也可以第1区域62的下表面的整体被低热传导部件66覆盖。由此,能够进一步减少发热电阻体2中产生的热在通孔导体61以及第1区域62中传导并传导至接合层5的可能性。
此外,也可以第1区域62的下表面的整体以及侧面的一部分被低热传导部件66覆盖。由此,能够进一步减少发热电阻体2中产生的热在通孔导体61以及第1区域62中传导并传导至接合层5的可能性。
-符号说明-
1:陶瓷基板
2:发热电阻体
3:吸附电极
4:金属部件
41:贯通孔
5:接合层
51:凹部
6:导通部
7:导线端子
8:膜状部件
81:凹状部
82:凸缘部
10:样品保持件
11:样品保持面。
Claims (6)
1.一种样品保持件,具备:
陶瓷基板,一个主面是样品保持面;
发热电阻体,被设置于该陶瓷基板的内部或者另一个主面;
金属部件,隔着接合层而被设置为覆盖所述陶瓷基板的所述另一个主面,该金属部件具有在一个主面和另一个主面开口的贯通孔;
导线端子,被插入到所述金属部件;和
导通部,被设置于所述接合层的内部,将所述发热电阻体与所述导线端子电连接,并且该导通部具有从所述陶瓷基板的所述另一个主面分离并在沿着所述另一个主面的方向延伸的区域。
2.根据权利要求1所述的样品保持件,其中,
所述导通部的整体被所述接合层覆盖。
3.根据权利要求1或2所述的样品保持件,其中,
所述接合层的热传导率小于所述陶瓷基板。
4.根据权利要求1至3的任意一项所述的样品保持件,其中,
所述发热电阻体被设置于所述陶瓷基板的所述另一个主面,
所述接合层是具有接合于所述陶瓷基板的第1层和接合于所述金属部件的第2层的层叠构造,并且所述第1层的弹性模量大于所述第2层。
5.根据权利要求4所述的样品保持件,其中,
所述导通部被设置于所述第1层与所述第2层之间。
6.根据权利要求1至5的任意一项所述的样品保持件,其中,
所述导通部的至少一部分被热传导率小于所述接合层的膜状部件覆盖。
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US20040071945A1 (en) * | 2001-08-10 | 2004-04-15 | Yasutaka Ito | Ceramic joint body |
US20040188413A1 (en) * | 2003-03-27 | 2004-09-30 | Sumitomo Electric Industries, Ltd. | Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed |
US20120299253A1 (en) * | 2010-01-29 | 2012-11-29 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck apparatus |
US20160196999A1 (en) * | 2014-09-04 | 2016-07-07 | Ngk Insulators, Ltd. | Wafer holder and method for manufacturing the same |
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JP3897563B2 (ja) * | 2001-10-24 | 2007-03-28 | 日本碍子株式会社 | 加熱装置 |
JP4761723B2 (ja) * | 2004-04-12 | 2011-08-31 | 日本碍子株式会社 | 基板加熱装置 |
US8525418B2 (en) * | 2005-03-31 | 2013-09-03 | Ngk Spark Plug Co., Ltd. | Electrostatic chuck |
JP6077258B2 (ja) * | 2012-10-05 | 2017-02-08 | 日本特殊陶業株式会社 | 積層発熱体、静電チャック、及びセラミックヒータ |
JP6321522B2 (ja) * | 2014-11-05 | 2018-05-09 | 日本特殊陶業株式会社 | 加熱装置 |
WO2016080262A1 (ja) * | 2014-11-20 | 2016-05-26 | 住友大阪セメント株式会社 | 静電チャック装置 |
JP6317242B2 (ja) | 2014-11-28 | 2018-04-25 | 京セラ株式会社 | 試料保持具 |
JP5962833B2 (ja) * | 2015-01-16 | 2016-08-03 | Toto株式会社 | 静電チャック |
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US20040071945A1 (en) * | 2001-08-10 | 2004-04-15 | Yasutaka Ito | Ceramic joint body |
US20040188413A1 (en) * | 2003-03-27 | 2004-09-30 | Sumitomo Electric Industries, Ltd. | Ceramic Susceptor and Semiconductor or Liquid-Crystal Manufacturing Apparatus in Which the Susceptor Is Installed |
US20120299253A1 (en) * | 2010-01-29 | 2012-11-29 | Sumitomo Osaka Cement Co., Ltd. | Electrostatic chuck apparatus |
US20160196999A1 (en) * | 2014-09-04 | 2016-07-07 | Ngk Insulators, Ltd. | Wafer holder and method for manufacturing the same |
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KR102224133B1 (ko) | 2021-03-08 |
US11350492B2 (en) | 2022-05-31 |
JP6657426B2 (ja) | 2020-03-04 |
KR20190075125A (ko) | 2019-06-28 |
US20190313482A1 (en) | 2019-10-10 |
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