CN110047824B - Dual-color-temperature COB light source and manufacturing method thereof - Google Patents
Dual-color-temperature COB light source and manufacturing method thereof Download PDFInfo
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- CN110047824B CN110047824B CN201910270361.0A CN201910270361A CN110047824B CN 110047824 B CN110047824 B CN 110047824B CN 201910270361 A CN201910270361 A CN 201910270361A CN 110047824 B CN110047824 B CN 110047824B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000003292 glue Substances 0.000 claims abstract description 201
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- 230000009974 thixotropic effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 8
- 241000907903 Shorea Species 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 41
- 230000000694 effects Effects 0.000 description 5
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- 238000004026 adhesive bonding Methods 0.000 description 1
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- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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Abstract
The invention relates to a double-color temperature COB light source and a preparation method thereof, wherein the double-color temperature COB light source comprises: the manufacturing method of the LED color-temperature LED chip comprises the steps that a substrate, a bonding pad and LED chips of a solid crystal area are arranged, the LED chips comprise first color-temperature LED chips and second color-temperature LED chips which are uniformly arranged in an array at intervals, a fluorescent glue layer comprises a first glue layer and a second glue layer, and two kinds of fluorescent glue with different colors are prepared through the manufacturing method of the fluorescent glue layer; printing a first fluorescent glue on the upper part of the first color temperature LED wafer and curing to form a first glue layer, printing a second fluorescent glue in the solid crystal region, covering the first glue layer and curing to form a second glue layer, and adjusting the color temperature and the color through the preparation ratio of the fluorescent glue. Therefore, the preparation process is simple, the color temperature and display adjustment are flexible, the designated photoelectric parameters can be displayed by controlling the color temperature, different white light requirements of various customers can be easily met, and the product has low manufacturing method and material cost and excellent performance.
Description
Technical Field
The invention relates to the technical field of LED (light emitting diode) lighting, in particular to a two-color temperature COB (chip on board) light source and a manufacturing method thereof.
Background
As a lighting device, also called as an LED integrated light source, the LED light source has become more and more widely applied, and its working principle is: the positive electrode bonding pad and the negative electrode bonding pad are electrified, the LED wafer emits light, the fluorescent layer is excited to achieve light emission of the LED light source, and people can see objects clearly through the LED light source. Therefore, the color temperature and color rendering index of the LED light source are very important.
The traditional two-color temperature COB light source adopts the following manufacturing method: CSP wafer + CSP wafer; the CSP wafer and the conventional wafer are subjected to powder dropping; COB separates light emitting area bar looks or the alternate structure of annular, the preparation of division point powder, wafer CSP's scheme is a wafer level encapsulation, can be on the wafer different colour of direct encapsulation and colour temperature, but this kind of wafer encapsulation is not only with high costs, and it is not nimble enough on the regulation of colour temperature and demonstration, can't satisfy different customers ' demand, secondly, the product of COB separation bar or the alternate light emitting area structure of annular, it glues to have enclosed the one deck dam in the centre because of two different light emitting areas, the light emitting area is separated, the effect of mixed light is relatively poor, and be difficult for doing secondary optical design, the product has natural structure defect. Therefore, the double-color-temperature COB LED light source is high in cost, inflexible in color temperature and display adjustment and poor in light mixing effect.
Disclosure of Invention
The invention aims to provide a two-color temperature COB light source and a manufacturing method thereof, and aims to solve the problems that the traditional two-color temperature COB light source is high in cost, inflexible in color temperature and display adjustment and poor in light mixing effect.
A two-color temperature COB light source, comprising:
the middle part of the substrate is provided with a die bonding area;
the bonding pads comprise a positive bonding pad and a negative bonding pad which are respectively arranged on two opposite sides of the substrate;
the LED chip comprises a preset number of LED chips and flip chips arranged in the die bonding area, wherein the flip chips comprise a preset number of first color temperature LED chips and a preset number of second color temperature LED chips which are uniformly arranged in an array at intervals, the anode of each first color temperature LED chip is connected with the anode bonding pad, the cathode of each first color temperature LED chip is connected with the cathode bonding pad, each first color temperature LED chip can independently emit light, the anode of each second color temperature LED chip is connected with the anode bonding pad, the cathode of each second color temperature LED chip is connected with the cathode bonding pad, each second color temperature LED chip can independently emit light, and the color temperature of each first color temperature LED chip is lower than that of each second color temperature LED chip;
the fluorescent glue layer comprises a first glue layer and a second glue layer, the first glue layer is printed or glued on the upper part of the first color temperature LED wafer, and the second glue layer is glued on the solid crystal area and covers the upper part of the first glue layer;
after the first color temperature LED wafer and the second color temperature LED wafer emit light individually or together, the CRI is greater than 95.
In one embodiment, the first glue layer is a warm white fluorescent glue layer, so that light excited out of the first glue layer is warm white, and the second glue layer is a low refractive normal white glue layer, so that light excited out of the second glue layer is normal white or mixed color light.
In one embodiment, the color temperature of the first color temperature LED wafer is 2200-3500K, and the color temperature of the second color temperature LED wafer is 5000-7000K.
In one embodiment, the positive bonding pad is a common positive bonding pad, the negative bonding pad comprises a first negative bonding pad and a second negative bonding pad which are electrically isolated, the positive electrodes of the first color temperature LED chip and the second color temperature LED chip are connected with the common positive bonding pad, the negative electrode of the first color temperature LED chip is connected with the first negative bonding pad, the negative electrode of the second color temperature LED chip is connected with the second negative bonding pad,
or the negative electrode bonding pad is a common negative electrode bonding pad, the positive electrode bonding pad comprises a first positive electrode bonding pad and a second positive electrode bonding pad which are electrically isolated, the negative electrodes of the first color temperature LED wafer and the second color temperature LED wafer are connected with the common negative electrode bonding pad, the positive electrode of the first color temperature LED wafer is connected with the first positive electrode bonding pad, the positive electrode of the second color temperature LED wafer is connected with the second positive electrode bonding pad,
or the positive pad includes electrically isolated first positive pad and second positive pad, the negative pad includes electrically isolated first negative pad and second negative pad, the positive pole of first colour temperature LED wafer with first positive pad is connected, the negative pole of first colour temperature LED wafer with first negative pad is connected, the positive pole of second colour temperature LED wafer with the positive pad of second is connected, the negative pole of second colour temperature LED wafer with the negative pad of second is connected.
A manufacturing method of a two-color temperature COB light source comprises the following steps:
s1, die bonding, wherein the LED chips with the preset number are flip chips and comprise a first color temperature LED chip with the preset number and a second color temperature LED chip with the preset number, and the first color temperature LED chip and the second color temperature LED chip are uniformly welded and fixed in a die bonding area on the substrate at intervals;
s2, preparing fluorescent glue, namely preparing two kinds of fluorescent glue with different colors;
and S3, printing/dispensing, printing or dispensing a first fluorescent glue on the upper part of the first color temperature LED chip by a printing or dispensing method, and curing to form a first glue layer, and dispensing a second fluorescent glue on the die bonding area, covering the first glue layer, and curing to form a second glue layer.
In one embodiment, the first fluorescent glue is warm white fluorescent glue capable of exciting warm white light after printing or dispensing curing, and the second fluorescent glue is low-refractive normal white glue capable of exciting normal white light or mixed color light after dispensing curing.
In one embodiment, the color temperature of the first color temperature LED wafer is 2200-3500K, and the color temperature of the second color temperature LED wafer is 5000-7000K.
In one embodiment, the warm white fluorescent glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 10-14: (1.5-2.1): (0.55-0.75), wherein the yellow powder is yellow fluorescent powder with the peak wavelength of 530-580nm, and the red powder is red fluorescent powder with the peak wavelength of 600-660 nm;
the low-folding normal white light glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 4.2-5.3: (0.1-0.14): (0.025-0.035), wherein the yellow phosphor is the yellow phosphor with the peak wavelength of 530-580nm, and the red phosphor is the red phosphor with the peak wavelength of 600-660 nm.
In one embodiment, the low refractive index of the glue in the low-refractive normal white glue is 1.37-1.43, the hardness of the glue is shoreA 25-75, the mixing viscosity of the glue is 2000-20000 cPas seconds, and the density of the glue is 0.9-1.1 g/cm2The tensile strength of the glue is 1.5-6 mpa; the thixotropic index of glue in the warm white fluorescent glue is between 1.6 and 2.6 Pa.s, and the refractive index of the glue A/B is between 1.345 and 1.455.
In one embodiment, in step S3, the first fluorescent glue is uniformly printed or dispensed on the top of the first color temperature LED chip, and the curing is performed in two ways: baking for 0.5-10 minutes at the temperature of 120-160 ℃ by adopting a hot plate until the first glue layer is cured to reach the specified standard; or baking for 5-60 minutes at the temperature of 120-160 ℃ by adopting an oven until the first glue layer is cured to reach the specified standard.
The embodiment of the invention has the following beneficial effects:
foretell two colour temperature COB light sources are equipped with the LED wafer in the solid crystal district of base plate, and the LED wafer includes first colour temperature LED wafer and second colour temperature LED wafer, and even alternate arrangement becomes the array, and the fluorescence glue layer, including first glue layer and second glue layer, first glue layer printing or point glue in first colour temperature LED wafer upper portion, second glue layer point glue is in solid crystal district, and includes first glue layer upper portion, colour temperature and colour are adjusted through the preparation ratio of fluorescence glue. Therefore, the double-color temperature COB LED light source with the multiple layers of fluorescent glue layers is low in cost, flexible in color temperature and display adjustment, capable of achieving uniform wafer distribution and effectively achieving one-step die bonding, and good in light mixing effect.
According to the preparation method of the double-color-temperature COB light source, firstly, the first color temperature LED wafer and the second color temperature LED wafer are welded and fixed in the solid crystal region on the substrate at uniform intervals, and fluorescent glue with two different colors is prepared, the first fluorescent glue is printed or glued on the upper portion of the first color temperature LED wafer and is solidified to form the first glue layer, the second fluorescent glue is glued in the solid crystal region and covers the first glue layer and is solidified to form the second glue layer, and the color temperature and the color are adjusted through the preparation proportion of the fluorescent glue. Therefore, the preparation method of the double-color temperature COB LED light source with the multilayer fluorescent glue layer has the advantages of simple preparation process, flexible color temperature and display adjustment, convenient mass production, capability of displaying specified photoelectric parameters by controlling the color temperature, capability of easily meeting different white light requirements of various customers, low cost of each manufacturing method and material of the product and excellent performance.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Wherein:
FIG. 1 is a schematic structural diagram of a substrate and an LED chip according to an embodiment;
FIG. 2 is a schematic diagram of a first glue layer printed on the first color temperature LED chip shown in FIG. 1;
fig. 3 is a schematic diagram of dispensing a second glue layer on the die attach area shown in fig. 2 (the second glue stamp covers the first glue layer).
Detailed Description
To facilitate an understanding of the invention, the invention will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1 to 3, the dual color temperature COB light source of an embodiment is mainly used for photography lighting, exhibition lighting, and the like, and includes: the LED chip comprises a substrate 100, bonding pads, a preset number of LED chips and a fluorescent glue layer; a die bonding region 110 is arranged in the middle of the substrate 100; bonding pads, including an anode bonding pad 210 and a cathode bonding pad 220, respectively disposed on two opposite sides of the substrate 100, wherein the predetermined number of LED chips are flip chips, and the predetermined number of first color temperature LED chips 310 and the predetermined number of second color temperature LED chips 320 are disposed in the die bonding area 110, and are uniformly arranged in an array at intervals, the anode of the first color temperature LED chip 310 is connected to the anode pad 210, the cathode of the first color temperature LED chip 310 is connected to the cathode pad 220, and the first color temperature LED chip 310 can independently emit light, the anode of the second color temperature LED chip 320 is connected to the anode pad 210, the cathode of the second color temperature LED chip 320 is connected to the cathode pad 220, the second color temperature LED chip 320 can independently emit light, and the color temperature of the first color temperature LED chip 310 is lower than the color temperature of the second color temperature LED chip 320; the fluorescent glue layer comprises a first glue layer 311 and a second glue layer 301, the first glue layer 311 is printed or glued on the upper portion of the first color temperature LED wafer 310, the second glue layer 301 is glued on the die bonding area 110 and comprises the upper portion of the first glue layer 310, and color temperature and color are adjusted through preparation proportion of fluorescent glue. Therefore, the double-color temperature COB LED light source with the multiple layers of fluorescent glue layers is low in cost, flexible in color temperature and display adjustment, capable of achieving uniform wafer distribution and effectively achieving one-step die bonding, and good in light mixing effect.
In this embodiment, the first glue layer 311 is a warm white fluorescent glue layer, so that the light excited by the first glue layer 311 is warm white, and the second glue layer 301 is a low refractive index white glue layer, so that the light excited by the second glue layer 301 is normal white light or mixed color light.
In this embodiment, the color temperature of the first color temperature LED chip 310 is 2200-. Of course, in other embodiments of the invention, the color temperatures of the first color temperature LED chip 310 and the second color temperature LED chip 320 may be selected from other options, for example, the color temperature of the first color temperature LED chip 310 is 2500-.
Of course, in other embodiments of the present invention, there are 3 pads when the pads have a common positive or a common negative pole, 4 pads when the pads are separated from each other in positive and negative poles, and two positive pads and two negative pads. In this embodiment, when the positive bonding pad 210 is a common positive bonding pad, the negative bonding pad 220 includes a first negative bonding pad 221 and a second negative bonding pad 222 that are electrically isolated from each other, the positive electrodes of the first color temperature LED chip 310 and the second color temperature LED chip 320 are connected to the common positive bonding pad, the negative electrode of the first color temperature LED chip 310 is connected to the first negative bonding pad 221, and the negative electrode of the second color temperature LED chip 320 is connected to the second negative bonding pad 222. In this embodiment, the negative bonding pad 220 is a common negative bonding pad, the positive bonding pad 210 includes a first positive bonding pad and a second positive bonding pad which are electrically isolated from each other, the negative electrodes of the first color temperature LED chip 310 and the second color temperature LED chip 320 are connected to the common negative bonding pad, the positive electrode of the first color temperature LED chip 310 is connected to the first positive bonding pad, and the positive electrode of the second color temperature LED chip 320 is connected to the second positive bonding pad. In this embodiment, the positive bonding pad 210 includes a first positive bonding pad and a second positive bonding pad which are electrically isolated, the negative bonding pad 220 includes a first negative bonding pad and a second negative bonding pad which are electrically isolated, the positive electrode of the first color temperature LED chip 310 is connected to the first positive bonding pad, the negative electrode of the first color temperature LED chip 310 is connected to the first negative bonding pad, the positive electrode of the second color temperature LED chip 320 is connected to the second positive bonding pad, and the negative electrode of the second color temperature LED chip 320 is connected to the second negative bonding pad, so that the first color temperature LED chip 310 and the second color temperature LED chip 320 can emit light individually or together.
As shown in fig. 1 to 3, a method for manufacturing a two-color temperature COB light source includes the steps of:
and S1, die bonding, wherein the LED wafers with the preset number are flip chips, the flip chips comprise the first color temperature LED wafers 310 with the preset number and the second color temperature LED wafers 320 with the preset number, and the first color temperature LED wafers 310 and the second color temperature LED wafers 320 are uniformly welded and fixed in a die bonding area on the substrate at intervals.
S2, preparing fluorescent glue, and preparing two fluorescent glue with different colors.
S3, printing/dispensing, printing or dispensing a first fluorescent glue on the first color temperature LED chip 310 by printing or dispensing and curing to form a first glue layer 311, dispensing a second fluorescent glue on the die attach region, covering the first glue layer 311 and curing to form a second glue layer 301, and completing the molding process.
As shown in fig. 1, in the present embodiment, the manufacturing method of the invention is a flip chip multi-color COB manufacturing method, the substrate 100 needs to be designed separately according to different color temperature chips, and before the printing or dispensing operation of step S3, the following steps are performed to print solder paste on the PCB pads through a steel mesh; SMT pasting components and fixing the crystal; reflow soldering operation; electrical property test and box dam operation to whether the trompil size that confirms steel mesh goes out the gluey hole matches with the LED wafer, the base plate 100 is placed and is fixed with the carrier, adopts the printing board to print at last or adopts the point gum machine to carry out the operation of gluing.
In this embodiment, the first fluorescent glue is warm white fluorescent glue, and can excite warm white light after printing or dispensing curing, and the second fluorescent glue is low-refractive normal white glue, and can excite normal white light or mixed color light after dispensing curing.
In this embodiment, the color temperature of the first color temperature LED chip 310 is 2200-3500K, the color temperature of the second color temperature LED chip 320 is 5000-7000K in the warm white temperature range, and the different color temperature requirements of the multi-color temperature cob LED are different in the normal white temperature range, for example, the color temperature of the first color temperature LED chip 310 is 2800-3000K, and the color temperature of the second color temperature LED chip 320 is 6000-6500K. Further, a first fluorescent glue is printed or dispensed on the first color temperature LED chip 310 with a color temperature of 3000K. Of course, in other embodiments of the present invention, the color temperatures of the first color temperature LED chip 310 and the second color temperature LED chip 320 can be selected from other options, for example, the color temperature of the first color temperature LED chip 310 is 2500-.
In this embodiment, the warm white fluorescent glue has the following weight ratio: glue A/B: yellow powder: red pink ═ 10-14: (1.5-2.1): (0.55-0.75), wherein the gel A/B represents the mixture of A, B two types of gel, the ratio of A, B two types of gel is 5:1, the yellow powder is yellow phosphor with a peak wavelength of 530-580nm, and the red powder is red phosphor with a peak wavelength of 600-660 nm. Of course, the phosphor ratio is not exclusive, and in other embodiments of the present invention, the phosphor ratios may be combined differently. For example, the warm white fluorescent glue comprises the following components in parts by weight: glue A/B, yellow powder Y555: the red phosphor R630 is 12:1.8:0.65, wherein the glue A/B represents the mixture of A, B two kinds of glue, the proportion of A, B the two kinds of glue is 5:1, Y555 represents yellow phosphor with a peak wavelength of 555nm, and R630 represents red phosphor with a peak wavelength of 630 nm.
In the embodiment, the fluorescent glue can not flow greatly after being printed or dispensed, the color temperature can not be changed excessively, a thixotropic glue is adopted, the thixotropic index of the glue in the warm white fluorescent glue is between 1.6 and 2.6 Pa.s, the thixotropic index is measured by a high-range viscometer, and the refractive index of the glue A/B is between 1.345 and 1.455. Of course, in other embodiments of the invention, the thixotropic index of the glue in the warm white fluorescent glue is between 1.6 and 2.6 Pa.s, the thixotropic index is measured by a high range viscometer, and the refractive index of the glue A/B is between 1.405 and 1.415.
In this embodiment, in step S3, the first fluorescent glue is uniformly printed or dispensed on the top of the first color temperature LED chip 310, and is cured rapidly by the following two methods: baking for 0.5-10 minutes at the temperature of 120-160 ℃ by adopting a hot plate, wherein the specific conditions are determined according to the performance of the thixotropic glue until the first glue layer is cured to reach the specified standard; or baking for 5-60 minutes by using an oven at the temperature of 120-160 ℃, wherein the specific conditions depend on the performance of the thixotropic glue until the first glue layer 311 is cured to reach the specified standard.
In the embodiment, the color temperature change of the first printed glue of the first fluorescent glue is within the range of 0-200K after the first printed glue is initially cured, so that the requirement of the first layer on target color temperature and color coordinates is met.
In the embodiment, 6500K white light glue is sealed on the second layer by using low-folding normal white light glue, a traditional COB sealing method is adopted, for example, color temperature 6000-6500K is taken as an example, the low refractive index of the glue in the low-folding normal white light glue is 1.37-1.43, the hardness of the glue is shoreA 25-75, the mixing viscosity of the glue is 2000-20000 cPa.s, and the density of the glue is 0.9-1.1 g/cm2The tensile strength of the glue is 1.5-6 mpa, and in other embodiments of the invention, the low refractive index of the glue in the low-refractive normal white glue is 1.4-1.41, the hardness of the glue is shoreA 25-75, the mixing viscosity of the glue is 2000-20000 cP.s, and the density of the glue is 1.0g/cm2And the tensile strength of the glue is 1.5-6 mpa.
In this embodiment, the low-refractive normal white glue has the following weight ratio: glue A/B: yellow powder: red pink ═ 4.2-5.3: (0.1-0.14): (0.025-0.035), wherein the glue A/B represents A, B two kinds of glue mixed, the ratio of A, B two kinds of glue is 5:1, the yellow powder is yellow fluorescent powder with the peak wavelength of 530-580nm, and the red powder is red fluorescent powder with the peak wavelength of 600-660 nm. Of course, the phosphor ratio is not exclusive, and in other embodiments of the present invention, the phosphor ratios may be combined differently. For example, the low-refractive normal white glue has the following weight ratio: glue A/B: yellow powder Y555: pink G535 ═ 4.8: 00.12: 0.03, wherein the glue A/B represents A, B mixture of two kinds of glue, the ratio of A, B to the two kinds of glue is 5:1, Y555 represents yellow fluorescent powder with a peak wavelength of 555nm, and G535 represents red fluorescent powder with a peak wavelength of 535 nm.
In the embodiment, the target color temperature range of the white light is 6000-. The specific baking conditions of different glues are slightly different, and the specific process is segmented baking, namely low-temperature long-time baking and high-temperature long-time baking.
Therefore, the double-color-temperature COB light source completes the glue sealing operation.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (6)
1. A double-colored temperature COB light source which characterized in that includes:
the middle part of the substrate is provided with a die bonding area;
the bonding pads comprise a positive bonding pad and a negative bonding pad which are respectively arranged on two opposite sides of the substrate;
the LED chip comprises a preset number of LED chips, the LED chips are flip chips arranged in the solid crystal area, the LED chips comprise a preset number of first color temperature LED chips and a preset number of second color temperature LED chips, the LED chips are uniformly arranged in an array at intervals, the anode of each first color temperature LED chip is connected with the anode bonding pad, the cathode of each first color temperature LED chip is connected with the cathode bonding pad, each first color temperature LED chip can independently emit light, the anode of each second color temperature LED chip is connected with the anode bonding pad, the cathode of each second color temperature LED chip is connected with the cathode bonding pad, each second color temperature LED chip can independently emit light, and the color temperature of each first color temperature LED chip is lower than that of each second color temperature LED chip;
the fluorescent glue layer comprises a first glue layer and a second glue layer, the first glue layer is printed or glued on the upper part of the first color temperature LED wafer, and the second glue layer is glued on the solid crystal area and covers the upper part of the first glue layer;
the first glue layer is a warm white fluorescent glue layer, so that light excited out of the first glue layer is warm white light, and the second glue layer is a low-refractive-index white glue layer, so that light excited out of the second glue layer is normal white light or mixed color light;
the warm white fluorescent glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 10-14: (1.5-2.1): (0.55-0.75), wherein the yellow powder is yellow fluorescent powder with the peak wavelength of 530-580nm, and the red powder is red fluorescent powder with the peak wavelength of 600-660 nm;
the low-folding normal white light glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 4.2-5.3: (0.1-0.14): (0.025-0.035), wherein the yellow powder is yellow phosphor with peak wavelength of 530-;
the low refractive index of the glue in the low-refractive normal white glue is 1.37-1.43, the hardness of the glue is shoreA 25-75, the mixing viscosity of the glue is 2000-20000 cPas per second, and the density of the glue is 0.9-1.1 g/cm2The tensile strength of the glue is 1.5-6 mpa;
the thixotropic index of glue in the warm white fluorescent glue is between 1.6 and 2.6 Pa.s, and the refractive index of the glue A/B is between 1.345 and 1.455.
2. The two-color temperature COB light source of claim 1, wherein the color temperature of the first color temperature LED wafer is 2200-3500K, and the color temperature of the second color temperature LED wafer is 5000-7000K.
3. Two-color temperature COB light source according to claim 1,
the anode bonding pad is a common anode bonding pad, the cathode bonding pad comprises a first cathode bonding pad and a second cathode bonding pad which are electrically isolated, the anodes of the first color temperature LED wafer and the second color temperature LED wafer are connected with the common anode bonding pad, the cathode of the first color temperature LED wafer is connected with the first cathode bonding pad, the cathode of the second color temperature LED wafer is connected with the second cathode bonding pad,
or the negative electrode bonding pad is a common negative electrode bonding pad, the positive electrode bonding pad comprises a first positive electrode bonding pad and a second positive electrode bonding pad which are electrically isolated, the negative electrodes of the first color temperature LED wafer and the second color temperature LED wafer are connected with the common negative electrode bonding pad, the positive electrode of the first color temperature LED wafer is connected with the first positive electrode bonding pad, the positive electrode of the second color temperature LED wafer is connected with the second positive electrode bonding pad,
or the positive pad includes electrically isolated first positive pad and second positive pad, the negative pad includes electrically isolated first negative pad and second negative pad, the positive pole of first colour temperature LED wafer with first positive pad is connected, the negative pole of first colour temperature LED wafer with first negative pad is connected, the positive pole of second colour temperature LED wafer with the positive pad of second is connected, the negative pole of second colour temperature LED wafer with the negative pad of second is connected.
4. A manufacturing method of a two-color temperature COB light source is characterized by comprising the following steps:
s1, die bonding, wherein the LED chips with the preset number are flip chips and comprise a first color temperature LED chip with the preset number and a second color temperature LED chip with the preset number, and the first color temperature LED chip and the second color temperature LED chip are uniformly welded and fixed in a die bonding area on the substrate at intervals;
s2, preparing fluorescent glue, namely preparing two kinds of fluorescent glue with different colors;
s3, printing/dispensing, namely printing or dispensing a first fluorescent glue on the upper part of the first color temperature LED chip by adopting a printing or dispensing method and curing to form a first glue layer, dispensing a second fluorescent glue on the solid crystal region, covering the first glue layer and curing to form a second glue layer;
the first fluorescent glue is warm white fluorescent glue which can be excited to generate warm white light after being printed or cured by dispensing, and the second fluorescent glue is low-refraction normal white glue which can be excited to generate normal white light or mixed color light after being cured by dispensing;
the warm white fluorescent glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 10-14: (1.5-2.1): (0.55-0.75), wherein the yellow powder is yellow fluorescent powder with the peak wavelength of 530-580nm, and the red powder is red fluorescent powder with the peak wavelength of 600-660 nm;
the low-folding normal white light glue comprises the following components in parts by weight: glue A/B: yellow powder: red pink ═ 4.2-5.3: (0.1-0.14): (0.025-0.035), wherein the yellow powder is yellow phosphor with peak wavelength of 530-;
the low refractive index of the glue in the low-refractive normal white glue is 1.37-1.43, the hardness of the glue is shoreA 25-75, the mixing viscosity of the glue is 2000-20000 cPas per second, and the density of the glue is 0.9-1.1 g/cm2The tensile strength of the glue is 1.5-6 mpa;
the thixotropic index of glue in the warm white fluorescent glue is between 1.6 and 2.6 Pa.s, and the refractive index of the glue A/B is between 1.345 and 1.455.
5. The method as claimed in claim 4, wherein the first color temperature LED wafer has a color temperature of 2200-3500K, and the second color temperature LED wafer has a color temperature of 5000-7000K.
6. The manufacturing method according to claim 4,
in step S3, the first fluorescent glue is uniformly printed or dispensed on the upper portion of the first color temperature LED chip, and the following two ways are adopted for curing:
baking for 0.5-10 minutes at the temperature of 120-160 ℃ by adopting a hot plate until the first glue layer is cured to reach the specified standard,
or baking for 5-60 minutes at the temperature of 120-160 ℃ by adopting an oven until the first glue layer is cured to reach the specified standard.
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| CN111890815A (en) * | 2020-07-09 | 2020-11-06 | 苏州工业园区客临和鑫电器有限公司 | Flexible filament double-color-temperature fluorescent powder printing process |
| CN112490342A (en) * | 2020-12-08 | 2021-03-12 | 鸿利智汇集团股份有限公司 | Packaging method of two-color temperature COB |
| CN113394203A (en) * | 2021-04-27 | 2021-09-14 | 福建天电光电有限公司 | Double-color-temperature light source packaging structure and manufacturing method thereof |
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