CN105280102A - Light emitting diode display screen - Google Patents
Light emitting diode display screen Download PDFInfo
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- CN105280102A CN105280102A CN201410332586.1A CN201410332586A CN105280102A CN 105280102 A CN105280102 A CN 105280102A CN 201410332586 A CN201410332586 A CN 201410332586A CN 105280102 A CN105280102 A CN 105280102A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/14—Structure, shape, material or disposition of the bump connectors prior to the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
Abstract
The invention discloses a light emitting diode display screen. The display screen comprises an LED display screen substrate, on which an LED driving circuit is arranged. An output terminal of the LED driving circuit comprises a first positive electrode and a first negative electrode. The display screen further comprises LED wafers positioned on a first surface, a first joint part, a second joint part and a physic material layer. Input terminals of the LED wafers comprise second positive electrodes and second negative electrodes. The first positive electrode and the second positive electrodes are joined and connected electrically via the first joint part. The first negative electrode and the second negative electrodes are joined and connected electrically via the second joint part. The physic material layer is arranged on the LED wafers and comprises at least one of following materials such as smoothing material, film-coating material, thin film material and fluorescent material. The light emitting diode display screen helps to solve the technical problem in the prior art that the spacing distance between minimum points of the LED display screen is overlong by restrictions of the size of a support for lamp beads during a packaging process.
Description
Technical field
The present invention relates to display screen field, in particular to a kind of light emitting diode (LED) display screen.
Background technology
In the prior art, LED display by a plurality of lamp pearl, is combined by the mode of grafting usually, and wherein, the packaged type of lamp pearl product is mainly surface mount device SMD (SurfaceMountedDevices) encapsulation and chip Chip encapsulates.But, SMD encapsulating products and Chip encapsulating products itself have the restriction of size, wherein, the current minimum dimension of SMD packaged lamp pearl can only accomplish 1.5mm*1.5mm, and the current minimum dimension of Chip packaged lamp pearl can only accomplish 0.8mm*0.8mm, thus limit the size of LED display, the smallest point spacing causing current LED display to accomplish rests on 1.6mm, hinder LED display in small size, high resolving power field, such as, application under home environment.
At this stage, above-mentioned conventional package lamp pearl, i.e. the size restriction of the lamp pearl of SMD encapsulation and Chip encapsulation caused primarily of encapsulating structure.As shown in Figure 1, in conventional package technique, wafer 102 is arranged on support 104 usually, and play a supporting role in support 104 1 aspect, chip electrode 106 and substrate 108 is connected on the other hand, such as, between pcb board, wherein as electrical connection medium, fully fixed for making wafer 102, the upper end of support 104 is provided with concave configuration usually so that wafer 102 is placed in one, thus the design size of support 104 is usually comparatively large, limits reducing further of the lamp pearl size encapsulated.
In addition, LED wafer and pad are generally linked together by metal wire by the bonding wire craft of conventional package lamp pearl, and this makes the quality of the quality of the welding of metal wire on lamp pearl create direct impact.Under the trend that LED display dot spacing does less and less, traditional bonding wire craft constrains the development of LED display equally, such as shown in Fig. 1, in the bonding wire craft of conventional package lamp pearl, its welding position, the also junction of the i.e. junction of metal wire 110 and wafer 102 and metal wire 110 and the pad 112 on support 104, be easy to the impact by external force or temperature and produce fracture, cause the scarce bright of lamp pearl, thus have impact on the display performance of LED display.
For above-mentioned problem, at present effective solution is not yet proposed.
Summary of the invention
Embodiments provide a kind of light emitting diode (LED) display screen, with the technical matters that the smallest point spacing at least solving the LED display caused due to the size restriction of conventional package lamp pearl medium-height trestle in prior art is excessive.
According to an aspect of the embodiment of the present invention, provide a kind of light emitting diode (LED) display screen, comprise: LED display substrate, above-mentioned LED display substrate is provided with driving circuit, wherein, the output terminal of above-mentioned driving circuit comprises: the first positive electrode and the first negative electrode, and above-mentioned first positive electrode and above-mentioned first negative electrode are positioned at the first surface of above-mentioned LED display substrate; LED wafer, be positioned on above-mentioned first surface, the input end of above-mentioned LED wafer comprises: the second positive electrode and the second negative electrode, wherein, above-mentioned second positive electrode and above-mentioned second negative electrode are positioned at the second surface of above-mentioned LED wafer, and above-mentioned second surface and above-mentioned first surface are oppositely arranged; First attachment and the second attachment, wherein, above-mentioned first positive electrode and above-mentioned second positive electrode are engaged by the first attachment and are electrically connected, and above-mentioned first negative electrode and above-mentioned second negative electrode are engaged by the second attachment and be electrically connected; Physical material layer, is arranged on the relative with above-mentioned second surface the 3rd of above-mentioned LED wafer the on the surface, and wherein, above-mentioned physical material layer comprises following material one of at least: filtering material, Coating Materials, membraneous material, fluorescence material.
Alternatively, above-mentioned filtering material is used for the transmitted light that filtering is positioned at one or more default wave band.
Alternatively, above-mentioned default wave band comprises: ultraviolet light wave band.
Alternatively, above-mentioned default wave band comprises: one or more visible light wave range.
Alternatively, the above-mentioned first surface of above-mentioned LED display substrate is provided with multiple above-mentioned LED wafer, wherein, the spacing of two adjacent in above-mentioned multiple LED wafer is arranged according to predetermined display screen dot spacing.
Alternatively, the above-mentioned physical material layer be arranged on above-mentioned 3rd surface of each in above-mentioned multiple LED wafer is formed as a whole.
Alternatively, on above-mentioned first surface, multiple LED wafer groups that above-mentioned multiple LED wafer is divided into arrangement identical, wherein, each group in above-mentioned multiple LED wafer group comprise following one of at least: the first wafer, the above-mentioned physical material layer be arranged on above-mentioned 3rd surface on above-mentioned first wafer is made up of the first material, for making above-mentioned first wafer externally red-emitting; Second wafer, the above-mentioned physical material layer be arranged on above-mentioned 3rd surface on above-mentioned second wafer is made up of the second material, for making above-mentioned second wafer externally transmitting green light; Wafer, the above-mentioned physical material layer be arranged on above-mentioned 3rd surface in above-mentioned wafer is made up of the 3rd material, externally launches blue light for making above-mentioned wafer.
Alternatively, the above-mentioned default wave band that above-mentioned first material is corresponding comprises: green light band and blue wave band; The above-mentioned default wave band that above-mentioned second material is corresponding comprises: red spectral band and blue wave band; The above-mentioned default wave band that above-mentioned 3rd material is corresponding comprises: red spectral band and green light band.
Alternatively, above-mentioned first attachment and above-mentioned second attachment comprise one of following: metal solder thing, is connected between above-mentioned first positive electrode and above-mentioned second positive electrode, and/or, between above-mentioned first negative electrode and above-mentioned second negative electrode; Cocrystalization compound, is connected between above-mentioned first positive electrode and above-mentioned second positive electrode, and/or, between above-mentioned first negative electrode and above-mentioned second negative electrode; Conductive silver paste, solidification is connected between above-mentioned first positive electrode and above-mentioned second positive electrode, and/or, between above-mentioned first negative electrode and above-mentioned second negative electrode; Anisotropic conductive, is bonded between above-mentioned first positive electrode and above-mentioned second positive electrode, and/or, between above-mentioned first negative electrode and above-mentioned second negative electrode.
In embodiments of the present invention, owing to adopting the mounting means of the electrode relative bonding on the electrode of LED wafer and LED display substrate, thus avoid as in conventional package technique to the use of support, the smallest point spacing of the LED display in the embodiment of the present invention is made no longer to be subject to the restriction of stent size, and then the first attachment and the second attachment can have on the basis of relatively little size between chip electrode and electrode of substrate, solve the technical matters that the smallest point spacing of the LED display caused due to the size restriction of conventional package lamp pearl medium-height trestle in prior art is excessive, reach the technique effect of the smallest point spacing reducing LED display.Further, owing to eliminating in embodiments of the present invention in conventional package technique for being electrically connected the use of the metal wire of LED wafer and support, eliminate the impact of welding quality on the performance of LED display, thus reach the technique effect of the reliability improving LED display.Further, in embodiments of the present invention, have employed the mode of the physical material layer be made up of filtering material in the arranged outside of LED wafer, the object of the illumination effect improving LED wafer has been issued in the prerequisite not changing selected LED wafer, and then improve the performance of LED display, for user brings more excellent experience.
Accompanying drawing explanation
Accompanying drawing described herein is used to provide a further understanding of the present invention, and form a application's part, schematic description and description of the present invention, for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is the schematic diagram of a kind of LED lamp bead according to existing encapsulation technology;
Fig. 2 is the schematic diagram of a kind of optional LED display according to the embodiment of the present invention;
Fig. 3 is the schematic diagram according to the optional LED display of the another kind of the embodiment of the present invention;
Fig. 4 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Fig. 5 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Fig. 6 (a) is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Fig. 6 (b) is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Fig. 7 is the schematic diagram of the manufacture method of a kind of optional LED display according to the embodiment of the present invention;
Fig. 8 is the schematic diagram of the manufacture method according to the optional LED display of the another kind of the embodiment of the present invention;
Fig. 9 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Figure 10 is the schematic diagram of the arrangement mode according to the LED wafer in a kind of optional LED display of the embodiment of the present invention;
Figure 11 is the schematic diagram of the arrangement mode according to the LED wafer in the optional LED display of the another kind of the embodiment of the present invention;
Figure 12 is the schematic diagram of the position relationship according to the LED wafer in a kind of optional LED display of the embodiment of the present invention;
Figure 13 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Figure 14 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Figure 15 is the schematic diagram of another the optional LED display according to the embodiment of the present invention;
Figure 16 is the schematic diagram of another the optional LED display according to the embodiment of the present invention.
Embodiment
Hereinafter also describe the present invention in detail with reference to accompanying drawing in conjunction with the embodiments.It should be noted that, when not conflicting, the embodiment in the application and the feature in embodiment can combine mutually.
Embodiment 1
According to the embodiment of the present invention, provide a kind of light emitting diode (LED) display screen, as shown in Figure 2, this light emitting diode (LED) display screen comprises:
1) LED display substrate 200, LED display substrate 200 is provided with LED drive circuit, wherein, the output terminal of LED drive circuit comprises: the first positive electrode 202 and the first negative electrode 204, wherein, the first positive electrode 202 and the first negative electrode 204 are positioned at the first surface on LED display substrate 200;
2) LED wafer 210, be positioned on first surface, the input end of LED wafer 210 comprises: the second positive electrode 212 and the second negative electrode 214, wherein, second positive electrode 212 and the second negative electrode 214 are positioned at the second surface in LED wafer 210, and second surface and first surface are oppositely arranged;
3) the first attachment 222 and the second attachment 224, wherein, first positive electrode 202 is engaged with the second positive electrode 212 by the first attachment 222 and is electrically connected, and the first negative electrode 204 is engaged with the second negative electrode 214 by the second attachment 224 and is electrically connected;
4) physical material layer 230, is arranged on the relative with second surface the 3rd of LED wafer 210 the on the surface, and wherein, physical material layer 230 comprises following material one of at least: filtering material, Coating Materials, membraneous material, fluorescent material.
According to the LED display that the embodiment of the present invention provides, LED display substrate 200 wherein can be provided with LED drive circuit, wherein, this LED drive circuit may be used for generating control voltage and/or controlling electric current, and may be used for exporting above-mentioned control voltage and/or controlling electric current as the first positive electrode 202 of the output terminal of this LED drive circuit and the first negative electrode 204, and then above-mentioned control voltage and/or control electric current may be used for controlling the luminance of LED wafer 210.
In embodiments of the present invention, the specification of the LED wafer 210 that above-mentioned control voltage and/or the concrete threshold range controlling electric current can control used for it and/or model set, and then, LED drive circuit for generating control voltage and/or control electric current also can have multiple feasible form corresponding with it and structure, and the present invention does not do tired stating at this.
As shown in Figure 2, in embodiments of the present invention, as the output terminal of above-mentioned LED drive circuit, first positive electrode 202 and the first negative electrode 204 can be positioned at the same side of LED display substrate 200, wherein, for stating conveniently, below the surface of this side LED display substrate 200 is designated as first surface.It should be noted that, positive electrode alleged in the embodiment of the present invention and negative electrode only for represent electric connecting terminal and and corresponding electric connecting terminal between corresponding annexation, and should not be construed as any other unnecessary restriction of existence, such as, in some embodiments of the invention, on the first surface of LED display substrate 200, first positive electrode 202 can have multiple, and the first corresponding with it negative electrode 204 can be a common port, this common port can show as the pad etc. having given shape sheet metal or be communicated with by wire.
More specifically, in embodiments of the present invention, the first above-mentioned positive electrode 202 and the shape of the first negative electrode 204, structure or material can have multiple choices and combination, such as: from vpg connection, first positive electrode 202 and the first negative electrode 204 can be rectangle, also can be circular, semicircle, or the shape that semicircle and rectangle are combined into, from material aspect, the first positive electrode 202 and the first negative electrode 204 can be silver electrode, also can be the metal material such as copper, gold or other conductor materials, from configuration aspects, first positive electrode 202 and the first negative electrode 204 can be smooth plane for the surface of fitting with LED wafer 210, also certain curvature can all or part ofly be had, default texture or projection can also be had, the structures such as groove, wherein, can align with LED display substrate 200 in the surface of the first positive electrode 202 and the first negative electrode 204, also can have relative to the surface of LED display substrate 200 and comparatively significantly protrude, can also arrange according to the structure of the electrode of LED wafer 210, such as, first positive electrode 202 and the first negative electrode 204 can be set to different height or thickness.Certainly, be more than some examples, the present invention does not all do any restriction to this.
On the other hand, generally speaking, the LED display substrate 200 in the embodiment of the present invention can be printing board PCB (PrintedCircuitBoard) usually.But, in some embodiments of the invention, LED display substrate 200 also can be ceramic circuit board, such as how empty ceramic circuit board, LTCC LTCC (LowTemperatureCo-firedCeramic) circuit board etc., or the material being used as circuit board adopting other feasible or technological design, the present invention is not construed as limiting this.It should be noted that the LED display substrate 200 described in the embodiment of the present invention should not be interpreted as LED-baseplate in general sense completely equally, and be understood to include LED-baseplate at the interior feasible substrate for LED display assembling.
According to the LED display that the embodiment of the present invention provides, as shown in Figure 2, can also comprise and be positioned at LED wafer 210 on first surface, wherein, the same side of LED wafer 210 can be positioned at as the second positive electrode 212 of the input end of LED wafer 210 and the second negative electrode 214, wherein, for ease of describing, the surface of the LED wafer 210 of this side can be designated as second surface.
Wherein, be positioned at positive electrode and negative electrode that the second positive electrode 212 on second surface and the second negative electrode 214 can represent LED wafer 210 respectively, wherein, above-mentioned LED wafer 210 can by being in different luminances from the control voltage of the second positive electrode 212 and the input of the second negative electrode 214 and/or the different amplitudes of control electric current.Wherein, it should be noted that, the luminance of above-mentioned LED wafer 210 can not only for representing lighting and extinguishing two states of LED wafer 210, the luminance of the different brightness representing this LED wafer 210 can also be used for, even may be used for the luminance of the different colours representing this LED wafer 210, the present invention is not construed as limiting this.
Generally speaking, in embodiments of the present invention, LED wafer 210 directly can select existing LED wafer 210 product usually, and particularly, above-mentioned LED wafer 210 can be chosen from plurality of specifications and/or model, such as, it can be high-power chip, also can be miniwatt chip, can be single tube level, also can be the wafer etc. of digital level, dot matrix level or decorative lighting, the present invention be not construed as limiting this.More specifically, the present invention does not also all limit especially for the performance parameter such as size, forward conduction voltage, rated current, luminescence efficiency of LED wafer 210, alternatively, the parameters of LED wafer 210 can be configured according to the designing requirement of LED display and environment for use.Certainly, in some embodiments of the invention, above-mentioned LED wafer 210 also can be that technician requires specific LED wafer 210 product of design according to Related product, and the present invention is not construed as limiting this.
As shown in Figure 2, be different from prior art, in embodiments of the present invention, LED wafer 210 is dispersed with the side of the second positive electrode 212 and the second negative electrode 214, also be second surface, can be oppositely arranged with the above-mentioned first surface of LED display substrate 200, but not in existing packaging technology as shown in Figure 1 back to setting.Thus, compared with existing packaging technology, the space structure formed due to chip electrode and electrode of substrate more tightens, and can have according to the syndeton between the LED wafer 210 in the LED display that the embodiment of the present invention provides and LED display substrate 200 design that size more saves.
Particularly, as shown in Figure 2, LED display in the embodiment of the present invention may further include the first attachment 222 and the second attachment 224, wherein, first positive electrode 202 can be engaged and is electrically connected by the first attachment 222 with the second positive electrode 212, and the first negative electrode 204 can be engaged and is electrically connected by the second attachment 224 with the second negative electrode 214.
In above-mentioned scene, by the electrical connection that the first attachment 222 and the second attachment 224 are formed between aforesaid substrate electrode and above-mentioned chip electrode, constitute the conducting loop between LED drive circuit in LED display substrate 200 and LED wafer 210, thus the control voltage that can be exported by above-mentioned LED drive circuit and/or control electric current are controlled LED wafer 210, and the Presentation Function of LED display can be realized further.
In addition, as shown in Figure 2, in embodiments of the present invention, owing to adopting the mounting means of the electrode relative bonding on the electrode of LED wafer 210 and LED display substrate 200, thus avoid as in conventional package technique to the use of support, the smallest point spacing of the LED display in the embodiment of the present invention is made no longer to be subject to the restriction of stent size, and then the first attachment 222 and the second attachment 224 can have on the basis of relatively little size between chip electrode and electrode of substrate, solve the technical matters that the smallest point spacing of the LED display caused due to the size restriction of conventional package lamp pearl medium-height trestle in prior art is excessive, reach the technique effect of the smallest point spacing reducing LED display.Further, owing to eliminating in embodiments of the present invention in conventional package technique for being electrically connected the use of the metal wire of LED wafer 210 and support, eliminate the impact of welding quality on the performance of LED display, thus reach the technique effect of the reliability improving LED display.
Be described in detail to the multiple concrete embodiment of the first attachment 222 and the second attachment 224 below.
With reference to figure 3 to Fig. 5 figure, and 6 (a) and Fig. 6 (b), as the optional embodiment of the embodiment of the present invention, the first attachment 222 and the second attachment 224 can comprise following one of at least:
1) metal solder thing 302, is connected between the first positive electrode 202 and the second positive electrode 212, and/or, between the first negative electrode 204 and the second negative electrode 214;
2) cocrystalization compound 402, is connected between the first positive electrode 202 and the second positive electrode 212, and/or, between the first negative electrode 204 and the second negative electrode 214;
3) conductive silver paste 502, solidification is connected between the first positive electrode 202 and the second positive electrode 212, and/or, between the first negative electrode 204 and the second negative electrode 214.
4) anisotropic conductive ACP (AnisotropicConductivePaste) 602, is bonded between the first positive electrode 202 and the second positive electrode 212, and/or, between the first negative electrode 204 and the second negative electrode 214.
Wherein, for embodiment 1), a kind of optional by the first attachment 222 and/or the connected mode of the second attachment 224 between chip electrode and electrode of substrate corresponding to it, also be die bond mode, can for planting gold goal juncture, wherein, as shown in Figure 3, metal solder thing 302 can for being planted in the gold goal on the first positive electrode 202 of LED display substrate 200 and the first negative electrode 204 respectively, and the opposite side of above-mentioned gold goal engages with the second positive electrode 212 of LED wafer 210 and the second negative electrode 214 respectively.
Particularly, its manufacturing process can as shown in Figure 7, comprise the following steps:
S702: plant gold goal respectively on first positive electrode 202 and the first negative electrode 204 of LED display substrate 200;
S704: LED wafer 210 is installed on the first surface of LED display substrate 200, wherein, the second surface of LED wafer 210 is relative with first surface, and the position of the second positive electrode 212 is corresponding with the gold goal be planted on the first positive electrode 202, the position of the second negative electrode 214 is corresponding with the gold goal be planted on the first negative electrode 204;
S706: by ultrasound wave melting welding gold goal, and by press welding device by LED wafer 210 pressure welding on LED display substrate 200.
Certainly, it is more than a kind of example, the present invention is not construed as limiting this, such as, in some embodiments of the invention, before step S704, can also comprise the following steps: horizontal level calibration is carried out to the gold goal on the first positive electrode 202 and the first negative electrode 204, in addition, before step S706, can also comprise: the gold goal on the pad on the LED display substrate 200 corresponding with the first positive electrode 202 and the second positive electrode 212 to LED wafer 210 and/or the first positive electrode 202 and the second positive electrode 212 carries out preheating, etc.
In addition, in some other embodiment of the present invention, first attachment 222 and the second attachment 224 also can not be gold goal, but the metal solder thing 302 formed by gold plaque or golden plate, in addition, metal solder thing 302 also can be the metal or alloy material beyond gold, and such as scolding tin etc., the present invention is not limited in any way this.
In embodiments of the present invention, for embodiment 2), die bond mode corresponding to it can be eutectic juncture, wherein, as shown in Figure 4, the first positive electrode 202 of LED display substrate 200 and the first negative electrode 204 can be engaged by cocrystalization compound 402 with the second positive electrode 212 of LED wafer 210 and the second negative electrode 214 respectively.
Particularly, its manufacturing process can as shown in Figure 8, comprise the following steps:
S802: cover Eutectic Layer on first positive electrode 202 and the first negative electrode 204 of LED wafer 210;
S804: LED wafer 210 is installed on the first surface of LED display substrate 200, wherein, the second surface of LED wafer 210 is relative with first surface, and the position of the second positive electrode 212 is corresponding with the first positive electrode 202, and the position of the second negative electrode 214 is corresponding with the first negative electrode 204;
S806: under the temperature conditions preset, Eutectic Layer is heated.
Certainly, it is more than a kind of example, the present invention is not construed as limiting this, such as, in some embodiments of the invention, also can not adopt the mode of direct eutectic, but adopt the juncture of being assisted eutectic by solder flux, wherein, on auxiliary solder flux first positive electrode 202 that can be arranged in LED display substrate 200 in advance and the first negative electrode 204.
In addition, the Eutectic Layer described in step S802 can be chosen from multiple material, generally speaking, it can be Au80Sn20, but, in other embodiments of the present invention, Eutectic Layer also can be formed by compounds such as CuSn or PbSn, and the present invention is not construed as limiting this.
With embodiment 2) similar, embodiment 3 in the embodiment of the present invention) also first can carry out contraposition between chip electrode and electrode of substrate, then solidified be bonded between the first positive electrode 202 and the second positive electrode 212 and between the first negative electrode 204 and the second negative electrode 214 by carrying out the mode such as heat to the conductive silver paste 502 be coated between chip electrode and electrode of substrate, as shown in Figure 5, the present invention does not repeat this.
In embodiments of the present invention, for embodiment 3), die bond mode corresponding to it can be ACP juncture, wherein, as shown in Fig. 6 (a), the first positive electrode 202 of LED display substrate 200 and the first negative electrode 204 can be engaged by ACP602 with the second positive electrode 212 of LED wafer 210 and the second negative electrode 214 respectively.
Further, as shown in Fig. 6 (b), as one preferred embodiment, ACP602 also can be bonded between the first positive electrode 202 and the second positive electrode 212 and between the first negative electrode 204 and the second negative electrode 214 simultaneously, and the first attachment 222 and the second attachment 224 are formed as one.
In Fig. 6 (b), be different from above-mentioned embodiment 1), 2) syndeton that the first attachment 222 with 3) are separated with the second attachment 224, ACP602 can be formed as integrally being bonded between electrode of substrate and chip electrode, wherein, as the one of polymer bonds mixture, the anisotropy of ACP can make ACP602 have preferably electric conductivity on the direction perpendicular to first surface and second surface, and to be parallel to first surface relative with the electric conductivity on the direction of second surface poor, wherein, above-mentioned direction conductance can be insufficient by the intercrystalline contact using the conductive filling material of relatively low capacity to cause and the conductance that causes realizes with direction change.In above-mentioned scene, due to ACP602 can globality be coated between electrode of substrate and chip electrode, eliminate the first positive electrode 202 and the second positive electrode 212, and the first difference contraposition between negative electrode 204 and the second negative electrode 214, and avoid embodiment 1) to 3) in first attachment 222 that may occur and the second attachment 224 to contact with each other the short circuit problem caused, thus on the basis reaching the manufacturing cost reducing die bond equipment precision requirement and above-mentioned LED display, and then achieve the technique effect of the reliability improving above-mentioned LED display.
In addition, it can also be seen that from the above description, above-mentioned embodiment 1) to 4) in the first attachment 222 and the second attachment 224 formed outside the object of link circuit between LED display substrate 200 and LED wafer 210 reaching, effect LED wafer 210 be fixed on LED display substrate 200 can also be realized further, thus also can reach the technique effect of the reliability improving LED display.
Certainly, above-mentioned embodiment 1) to 4) exemplarily propose, for carrying out explanation specifically to technical solution of the present invention, and should not be construed as any restriction is constituted to the present invention.Technical scheme of the present invention can also realize by other means, does not do tired stating at this.
Alternatively, as shown in Figure 9, in embodiments of the present invention, above-mentioned LED display can also comprise:
1) insulate colloid 902, between the first attachment 222 and the second attachment 224, and makes to be in state of insulation between the first positive electrode 202 and the first negative electrode 204 and between the second positive electrode 212 and the second negative electrode 214.
As previously mentioned, for embodiment 1) to 3), exist the first attachment 222 and the second attachment 224 contact with each other cause for LED wafer 210 the LED drive circuit short circuit on the LED display substrate 200 of driving is provided may, for at least addressing this problem, according to the LED display of the embodiment of the present invention, as shown in Figure 9, the colloid 902 that insulate can also be filled between the first attachment 222 and the second attachment 224, thus solve the problem of short circuit, and reach the technique effect of the reliability improving above-mentioned LED display.
Particularly, the colloid 902 that insulate can have multiple choices, such as epoxy resin etc.It should be noted that above-mentioned insulation colloid 902 both can for liquid, also can be solid-state or solidliquid mixture, the present invention be not construed as limiting this.
By above-described embodiment, the present invention sets forth the structure in above-mentioned LED display with wafer being minimum unit.Further, the present invention is described in detail by the arrangement of following examples to the LED wafer 210 in LED display.
Wherein, as shown in Figure 10, alternatively, the first surface of LED display substrate 200 can be provided with multiple LED wafer 210, wherein, the spacing of two adjacent in multiple LED wafer 210 can be arranged according to predetermined display screen dot spacing.
As shown in Figure 10, in embodiments of the present invention, multiple LED wafer 210 usually can according to the mode regular array of rectangular lattice.But, this does not also mean that the arrangement mode of the present invention to LED wafer 210 has made restriction, such as, above-mentioned multiple LED wafer 210 also can have other arrangement mode, it can be such as oblique and staggered wafer arrangement mode as shown in figure 11, in addition, LED wafer 210 can also be arranged along the pattern preset, and the present invention is not construed as limiting this.
Alternatively, in embodiments of the present invention, the distance between two adjacent in multiple LED wafer 210 can be arranged according to the size of wafer and the designing requirement of LED display, as smallest point spacing is arranged.Such as, as shown in figure 12, under the profile of the light-emitting area of LED wafer 210 is foursquare situation, the distance S between two adjacent in multiple LED wafer 210 can be arranged according to following calculating formula:
S=P-D, wherein, S is for representing the distance between wafer, and P is for representing default smallest point spacing, and D is for representing the foursquare length of side as wafer light-emitting area outline.
On the other hand, in some embodiments of the invention, be the LED display of colored display for designing requirement, the arrangement mode of LED wafer 210 can also be arranged according to designing requirement and imaging resolution etc.Such as the optional embodiment of one of the present invention, on the first surface of LED display substrate 200, multiple LED wafer that multiple LED wafer 210 is divided into arrangement identical 210 groups, wherein, each group in multiple LED wafer 210 groups comprises: the first wafer, the second wafer and wafer, and wherein, the first wafer is used for red-emitting, second wafer is used for transmitting green light, and wafer is for sending blue light.
Under above-mentioned scene, according to the principle of three primary colours, the coloured light of other colors that can be able to be identified by red, green, blue three kinds of coloured light synthesis human eyes of different proportion.Thus the adjustable control voltage that can be provided respectively to the first wafer, the second wafer and wafer by LED drive circuit and/or control electric current, realize the control of color to above-mentioned LED display and brightness.
On basis described above, physical material layer 230 is also comprised according to the light emitting diode (LED) display screen that the embodiment of the present invention provides, wherein, this physical material layer 230 is arranged on the relative with second surface the 3rd of LED wafer 210 the on the surface, and this physical material layer 230 can comprise following material one of at least: filtering material, Coating Materials, membraneous material, fluorescent material.
Wherein, physical material layer 230 is arranged on the 3rd of LED wafer 210 the on the surface, wherein, 3rd surface is relative with second surface, and the second surface of LED wafer 210 is relative with the first surface of LED-baseplate 200, thus this second surface can be considered as LED wafer 210 one side in the inner part, and the 3rd surface can be considered as LED wafer 210 one side in the outer part, thus physical material layer 230 also can be considered as one deck physical material of covering outside LED wafer 210.
In general, the present invention can't limit the physical material specifically used, such as, in embodiments of the present invention, this physical material can adopt filtering material, so that the transport property of the light wave regulating LED wafer 210 to be gone out by the 3rd surface emitting, also Coating Materials can be adopted, to protect LED wafer 210 further, and then improve serviceable life and the reliability of whole LED display, in addition, this physical material can also adopt membraneous material or fluorescent material, thus the further modulation realized the output light of each wafer cell, the present invention is not construed as limiting this.For realizing above-mentioned functions, the material that above-mentioned physical material layer specifically adopts can be chosen from multiple material known to those skilled in the art, and the present invention does not enumerate at this.
Particularly, in embodiments of the present invention, when comprising filtering material in physical material layer, then can by physical material layer 230 to sent by LED wafer 210, filter transmitted through the light wave of this physical material layer 230, thus the radiative modulation achieved LED wafer 210, wherein, concrete modulation system can be determined according to designing requirement, the present invention is not construed as limiting this, such as it can be the modulation on frequency spectrum, also can be the modulation of the emission angle to light wave, thus reach the object of the illumination effect improving LED wafer 210.
Particularly, in embodiments of the present invention, the filtering material that physical material layer 230 adopts may be used for the transmitted light that filtering is positioned at one or more default wave band, or, also may be used for filtering is positioned at one or more predetermined angle interval transmitted light relative to the incident angle of physical material layer 230.
In embodiments of the present invention, filtering material more specifically apply can have multiple, such as, in some embodiments of the invention, this filtering material may be used for the transmitted light that filtering is positioned at ultraviolet light wave band, also be, above-mentioned default wave band can be set to ultraviolet light wave band, thus this filtering material also can be considered as being uv-resistant material, make physical material layer 230 can play the effect of filtering ultraviolet line, and then the ultraviolet intensity sent by LED wafer 210 can be reduced on the one hand, to reach the effect reduced the damage of human eye, can avoid on the other hand exposing to the open air inefficacy and fault that the LED wafer 210 in LED display outside causes because being subject to too much ultraviolet irradiation.
Under above-mentioned scene, the material adopted due to the physical material layer 230 that the multiple LED wafer 210 in monoblock LED display are arranged all plays identical or close effect, thus in embodiments of the present invention, the physical material layer 230 be arranged on the 3rd surface of each in multiple LED wafer 210 also can be formed as a whole, also namely this physical material layer 230 can be the manufactured goods of a size monoblock filtering material corresponding with LED display, thus the cutting action avoided on the one hand filtering material, this physical material layer 230 can be made more easily to be fixed in LED wafer on the other hand, the effect of the manufacturing cost reducing LED display can be reached.Certainly, this is a kind of example, can't form limitation of the invention; wherein; in some embodiments of the invention, other structures can also be provided with further outside physical material layer 230, the transparent panel of such as hard; to realize under the prerequisite to the protection of display screen; reduce the requirement of strength to above-mentioned filtering material, and when LED display is designed to be applied to open-air atmosphere, avoid physical material layer 230 to be subject to the impact of external environment; Deng, the present invention is not construed as limiting this.
In addition to the embodiments described above, in embodiments of the present invention, this filtering material can also be selected as can the material of transmitted light in the one or more visible light wave range of filtering, also namely above-mentioned default wave band can also be set to this one or more visible light wave range, thus reaches the object of the illumination effect improving LED wafer 210.Such as, for the LED wafer 210 that glow color is impure, filtering material corresponding with it can be utilized to modulate its utilizing emitted light, with outstanding a certain wavelength band components wherein, thus obtain better illumination effect.
Set-up mode for visible light wave range can also have multiple, to reach different purposes of design.Such as, group is divided into for aforesaid multiple LED wafer, and each LED wafer group comprises red-emitting respectively, first wafer of green glow and blue light, the situation of the second wafer and wafer, wherein, the physical material layer be arranged on the 3rd surface on the first wafer can be made up of the first material, the physical material layer be arranged on the 3rd surface on the second wafer can be made up of the second material, the physical material layer be arranged on the 3rd surface in wafer can be made up of the 3rd material, and the default wave band that the first material is corresponding, the default wave band that second material is corresponding, and default wave band corresponding to the 3rd material is different.
Under above-mentioned scene, the first wafer sending different color light can be respectively on the one hand, second wafer and wafer configure different filtering material respectively, to optimize the coloured light sent separately further, make colour component more pure, to reach the object of the display effect improving LED display, on the other hand, also physical material layer 230 can be utilized to reduce interference between three kinds of coloured light, such as, in some embodiments of the invention, the default wave band that first material is corresponding can comprise green light band and blue wave band, the default wave band that second material is corresponding can comprise red spectral band and blue wave band, the default wave band that 3rd material is corresponding can comprise red spectral band and green light band, thus the coloured light making the light-emitting zone of the first wafer transmit is only ruddiness, the coloured light that the light-emitting zone of the second wafer transmits is only green glow, the coloured light that the light-emitting zone of the first wafer transmits is only blue light, to optimize the display effect of LED display further.
Certainly, this is a kind of example, any unnecessary restriction can't be formed to the present invention, such as, in some embodiments of the invention, three wafers in wafer set also may be used for launching same coloured light, such as white light, and are reached the object of externally launching different color light by filtering material.Or in some embodiments of the invention, wafer also can be used for launching for exciting the blue light of the fluorescent material in physics material layer or ultraviolet light etc., and then fluorescent material is made to be excited the multiple coloured light such as outside transmitting white.In addition, in embodiments of the present invention, the wafer in wafer set is also not limited in the wafer comprising and send visible ray or invisible light, and such as, this wafer set also can comprise electrostatic prevention wafer etc., and the present invention is not all limited in any way this.
Known from the above description, in embodiments of the present invention, have employed the mode of the physical material layer be made up of filtering material in the arranged outside of LED wafer, the object of the illumination effect improving LED wafer has been issued in the prerequisite not changing selected LED wafer, and then improve the performance of LED display, for user brings more excellent experience.
Further, the embodiment of the present invention additionally provide a kind of feasible under relatively low packaging cost, relatively encapsulate the mode of multiple LED wafer thick and fast.Particularly, the structure after encapsulation can be as shown in figure 13.
In fig. 13, LED wafer 200 can adopt the packaged type of foregoing flip chip, and LED wafer 1302 adjacent with it then can adopt the packaging technology carrying out improving on traditional infrastructure.Particularly, shown in the side view of LED wafer 1302 as shown in fig. 13, LED wafer 1302 can adopt the packaging technology of improvement to be arranged on to be positioned on output terminal 1304 on substrate 200 surface and output terminal 1306, wherein, electrode 1308 in LED wafer 1302 can be engaged with output terminal 1304 by attachment 1312 and be electrically connected, and electrode 1310 can be electrically connected with output terminal 1306 by wire 1314.In FIG, electrode 1308 is represented by dotted line framework, attachment 1312 are by solid black framework table, electrode 1310 is represented by the retiform framework of filling, wire 1314 is represented by heavy line, and the two ends of wire 1314 can be connected with the pad be separately positioned on electrode 1310 and output terminal 1306 respectively by the mode of welding.Particularly, in embodiments of the present invention, electrode 1308 can represent the positive electrode of LED wafer 1302, electrode 1310 can represent the negative electrode of the 2nd LED, or, electrode 1308 can represent the negative electrode of LED wafer 1302, and electrode 1310 can represent the positive electrode of the 2nd LED, and the present invention does not limit this.
Under above-mentioned scene, engage owing to adopting the electrode 1308 of flip-chip packages technique and cover on substrate, therefore LED wafer 1302 also can be set directly at as LED wafer 210 substrate surface and without the need to additionally arranging support, thus reach the effect of the distance reduced between wafer, on the other hand, because the electrode 1310 of LED wafer 1302 adopts traditional packaged type, thus overcome when same employing flip-chip packages technique and contingent interference between electrode 1308, thus reduce the difficulty of the flip-chip packages technique of electrode 1308, the packaging cost of LED wafer 1302 entirety is declined greatly, and then reduce the manufacturing cost of the LED display adopting this packaged type, reach the effect taking into account size and manufacturing cost between wafer.
Certainly, this is a kind of example, can't form restriction to the present invention.Such as, above-described embodiment is described the packaged type of multiple LED wafer on substrate for adjacent 2 LED, but the quantity being encapsulated in the LED wafer on substrate in the embodiment of the present invention or the quantity that is encapsulated in multiple same or analogous LED wafer group on the substrate LED wafer in other words in display unit are not limited to be 2, such as, it can also be 3, wherein, alternatively, these 3 LED wafer can be respectively used to send ruddiness, green glow and blue light.Wherein, at least one LED wafer can be had in these 3 LED wafer to adopt the above-mentioned packaging technology of carrying out improving on traditional infrastructure, and the packaging technology that employing improves both can be adjacent with other 1 LED wafer of the packaged type adopting flip chip, such as can form structure as shown in figure 15, also can be adjacent with other 2 LED wafer of the packaged type adopting flip chip, such as can form mechanism as shown in figure 16, the present invention is not construed as limiting this.
The invention provides above-mentioned preferred embodiment to make an explanation to the present invention further, but it should be noted that above preferred embodiment is just in order to better describe the present invention, does not form and limits improperly the present invention.
As can be seen from the above description, present invention achieves following technique effect:
1) mounting means adopting the electrode of LED wafer 210 directly to engage with the electrode on LED display substrate 200, avoid as in conventional package technique to the dependence of support, make the smallest point spacing of the LED display in the embodiment of the present invention no longer be subject to the restriction of stent size, thus reach the technique effect of the smallest point spacing reducing LED display;
2) owing to eliminate in conventional package technique for being electrically connected LED wafer 210 and the use of the metal wire of support, eliminating the impact of welding quality on the performance of LED display, thus reaching the technique effect of the reliability improving LED display;
3) mode of the physical material layer be made up of filtering material in the arranged outside of LED wafer is adopted, the object of the illumination effect improving LED wafer has been issued in the prerequisite not changing selected LED wafer, and then improve the performance of LED display, for user brings more excellent experience.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a light emitting diode (LED) display screen, is characterized in that, comprising:
LED display substrate, described LED display substrate is provided with driving circuit, wherein, the output terminal of described driving circuit comprises: the first positive electrode and the first negative electrode, and described first positive electrode and described first negative electrode are positioned at the first surface of described LED display substrate;
LED wafer, be positioned on described first surface, the input end of described LED wafer comprises: the second positive electrode and the second negative electrode, wherein, described second positive electrode and described second negative electrode are positioned at the second surface of described LED wafer, and described second surface and described first surface are oppositely arranged;
First attachment and the second attachment, wherein, described first positive electrode and described second positive electrode are engaged by the first attachment and are electrically connected, and described first negative electrode and described second negative electrode are engaged by the second attachment and be electrically connected;
Physical material layer, is arranged on the relative with described second surface the 3rd of described LED wafer the on the surface, and wherein, described physical material layer comprises following material one of at least: filtering material, Coating Materials, membraneous material, fluorescent material.
2. display screen according to claim 1, it is characterized in that, the described first surface of described LED display substrate is provided with multiple described LED wafer, and wherein, the spacing of two adjacent in described multiple LED wafer is arranged according to predetermined display screen dot spacing.
3. display screen according to claim 2, is characterized in that, described filtering material is used for the transmitted light that filtering is positioned at one or more default wave band.
4. display screen according to claim 3, is characterized in that, described default wave band comprises: ultraviolet light wave band.
5. display screen according to claim 4, is characterized in that, the described physical material layer be arranged on described 3rd surface of each in described multiple LED wafer is formed as a whole.
6. display screen according to claim 3, is characterized in that, described default wave band comprises: one or more visible light wave range, and described visible light wave range is arranged according to the radiative spectrum of described LED wafer.
7. display screen according to claim 6, is characterized in that, on the first surface, multiple LED wafer groups that described multiple LED wafer is divided into arrangement identical, wherein, each group in described multiple LED wafer group comprise following one of at least:
First wafer, the described physical material layer be arranged on described 3rd surface on described first wafer is made up of the first material, for making described first wafer externally red-emitting;
Second wafer, the described physical material layer be arranged on described 3rd surface on described second wafer is made up of the second material, for making described second wafer externally transmitting green light;
Wafer, the described physical material layer be arranged on described 3rd surface in described wafer is made up of the 3rd material, externally launches blue light for making described wafer.
8. display screen according to claim 7, is characterized in that,
The described default wave band that described first material is corresponding comprises: green light band and blue wave band;
The described default wave band that described second material is corresponding comprises: red spectral band and blue wave band;
The described default wave band that described 3rd material is corresponding comprises: red spectral band and green light band.
9. display screen according to claim 2, is characterized in that, described filtering material is used for filtering is positioned at one or more predetermined angle interval transmitted light relative to the incident angle of described physical material layer.
10. display screen according to any one of claim 1 to 9, is characterized in that, described first attachment and described second attachment comprise one of following:
Metal solder thing, is connected between described first positive electrode and described second positive electrode, and/or, between described first negative electrode and described second negative electrode;
Cocrystalization compound, is connected between described first positive electrode and described second positive electrode, and/or, between described first negative electrode and described second negative electrode;
Conductive silver paste, solidification is connected between described first positive electrode and described second positive electrode, and/or, between described first negative electrode and described second negative electrode;
Anisotropic conductive, is bonded between described first positive electrode and described second positive electrode, and/or, between described first negative electrode and described second negative electrode.
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