CN110047822A - 半导体装置 - Google Patents
半导体装置 Download PDFInfo
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- CN110047822A CN110047822A CN201910021800.4A CN201910021800A CN110047822A CN 110047822 A CN110047822 A CN 110047822A CN 201910021800 A CN201910021800 A CN 201910021800A CN 110047822 A CN110047822 A CN 110047822A
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- 229910052802 copper Inorganic materials 0.000 description 29
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Abstract
本发明涉及半导体装置。具备对置配置的第1金属板和第2金属板、半导体芯片、第1绝缘体块以及封装。第1半导体芯片在其第1面露出第1电极,在其第2面露出第2电极,第1电极与第1金属板对置,并通过具有导电性的第1导电构件与第1金属板连接,第2电极与第2金属板连接。第1绝缘体块与第1半导体芯片相邻,第1绝缘体块的第1面与第1金属板接触,第1绝缘体块的作为相反侧的面的第2面与第2金属板接触。封装与第1金属板的连接第1半导体芯片的面和第2金属板的连接第1半导体芯片的面接触。
Description
技术领域
本发明涉及半导体装置,在该半导体装置中,一对金属板夹着在两面分别露出电极的半导体芯片,半导体芯片被密封在上述一对金属板之间。
背景技术
在日本特开2006-278591、日本特开2006-049542中公开了在一对金属板之间夹着半导体芯片并且上述半导体芯片被封装(package)密封的半导体装置。半导体芯片为平板状,在各个宽幅面(wide surface)露出电极。一对金属板分别通过焊料(或者焊料与金属块)与半导体芯片的各个面的电极连接。即,金属板起到将半导体芯片的电极与其他器件连接的导电路径的作用。在日本特开2006-278591、日本特开2006-049542的半导体装置中,各个金属板的一面从封装露出兼作散热器。
在日本特开2006-278591中公开了以将一对金属板保持为平行的状态对半导体芯片进行钎焊的夹具。另外,在日本特开2006-049542中公开了在一对金属板之间配置有夹着其他金属板的两个半导体芯片的双层构造的半导体装置。
发明内容
在日本特开2006-278591所公开的相关技术中,使用将一对金属板维持为平行的夹具。日本特开2006-049542的半导体装置为双层构造,难以保持中央的金属板的平行。本发明涉及在一对金属板之间夹着半导体芯片,半导体芯片与各个金属板连接并且被容纳于封装的半导体装置,并提供一种容易保持一对金属板的平行的构造。
本发明的实施方式涉及半导体装置。上述半导体装置具备第1金属板、第2金属板、第1半导体芯片、第1绝缘体块以及封装。第1金属板和第2金属板被配置成对置。在第1半导体芯片的第1面露出第1电极,在第1半导体芯片的第2面露出第2电极,第1电极与第1金属板对置,并通过焊料连接于第1金属板,第2电极与第2金属板对置,并通过焊料连接于第2金属板。第1绝缘体块与第1半导体芯片相邻。第1绝缘体块的第1面与第1金属板接触,第1绝缘体块的作为相反侧面的第2面与第2金属板接触。容纳第1半导体芯片的封装与第1金属板的连接第1半导体芯片的面和第2金属板的连接第1半导体芯片的面接触。
本发明的实施方式涉及的半导体装置中,电极通过焊料与金属板(电)连接。第1金属板与第2金属板夹着第1绝缘体块。第1绝缘体块将第1金属板和第2金属板保持为平行。根据本发明的实施方式涉及的半导体装置,即使不使用夹具等,也能够在焊料的熔融时将第1金属板和第2金属板保持为平行。另外,上述半导体装置中,第1金属板和第2金属板通过绝缘体块保持平行,因此能够使焊料的厚度恒定。此外,导电构件也可以和焊料一起被夹在半导体芯片与金属板之间。
在上述实施方式中,从第1金属板的法线方向观察,第1绝缘体块可以至少位于第1半导体芯片的两侧。
在上述实施方式中,从法线方向观察,第1绝缘体块可以包围第1半导体芯片的三边。第1绝缘体块也对第1半导体芯片的定位有利。
在上述实施方式中,从法线方向观察,第1绝缘体块可以位于第1半导体芯片的两侧方向。
在上述实施方式中,在第1半导体芯片的第1面可以设置有第3电极。第1绝缘体块可以具备与第3电极对置并且向封装的外部延伸的脚部。在脚部的与第3电极对置的面可以设置有与第3电极连接并且向封装的外部延伸的导电层。
在上述实施方式中,上述第1电极可以与上述第1金属板电连接。
本发明的实施方式涉及的半导体装置还可以进一步具备第3金属板、第2半导体芯片以及第2绝缘体块。第3金属板可以相对于第2金属板位于与第1金属板相反侧且与第2金属板对置。第2半导体芯片可以被第2金属板与第3金属板夹着,可以在第2半导体芯片的第1面露出第3电极,并在第2半导体芯片的第2面露出第4电极。第3电极可以与第2金属板对置,并且通过焊料与第2金属板连接,第4电极可以与第3金属板对置,并通过焊料与第3金属板连接。第2绝缘体块可以与第2半导体芯片相邻,第2绝缘体块的第1面可以与第2金属板接触,第2绝缘体块的作为相反侧面的第2面可以与第3金属板接触。封装可以容纳第1半导体芯片和第2半导体芯片。
上述实施方式涉及的半导体装置中,按照第1金属板、绝缘体块、第2金属板、其他绝缘体块、第3金属板这样的顺序层叠。中间的第2金属板被绝缘体块从两侧夹持而保持。上述半导体装置能够在制造时不使用夹具等而保持3张金属板的平行。
上述实施方式涉及的半导体装置中,半导体芯片与其他半导体芯片被串联连接。作为使用两个半导体芯片的串联连接的典型电路,举例有输出三相交流的变换器。变换器具备3组两个开关元件的串联连接。根据上述实施方式涉及的半导体装置,能够应用于变换器。
在上述实施方式中,在第1金属板与第3金属板之间并联连接有三组第1半导体芯片、第2金属板以及第2半导体芯片的组。根据本发明的实施方式涉及的半导体装置,能够以一个封装实现变换器的主要部件。
在上述实施方式中,还可以在第1半导体芯片的第1面设置有第5电极。在第2半导体芯片的第1面设置有第6电极。第1绝缘体块可以具备与第5电极对置并且向封装的外部延伸的第1脚部。第2绝缘体块可以具备与第6电极对置并且向封装的外部延伸的第2脚部。可以在第1脚部的与第5电极对置的面设置有与第5电极连接并且向封装的外部延伸的导电层。可以在第2脚部的与第6电极对置的面设置有与第6电极连接并且向封装的外部延伸的导电层。晶体管等,除了一对主电极(集电极电极和发射极电极、或者源电极和漏电极)以外,还具备栅极电极等控制电极。具备导电层的脚部起到将半导体芯片的栅极电极等控制电极(其他电极)与其他器件连接的端子的作用。保持第1金属板和第2金属板的平行的绝缘体块还能够兼作将半导体芯片的控制电极与其他器件连接的端子。
在上述实施方式中,上述第3电极可以与上述第2金属板电连接。
在上述实施方式中,第1和第2绝缘体块可以由陶瓷制作。本发明的详细内容以及进一步的改进通过以下的“具体实施方式”进行说明。
附图说明
下面将参照附图描述本发明的特征、优点以及技术和工业上的重要性,附图中相同的标号表示相同的元件。
图1是第1实施例的半导体装置的立体图。
图2是除了封装以外的半导体装置的分解立体图。
图3是沿着图1的III-III线的半导体装置的剖视图。
图4是沿着图1的IV-IV线的半导体装置的剖视图。
图5是第1变形例的半导体装置的剖视图。
图6是表示陶瓷块的其他变形例的分解立体图。
图7是第2实施例的半导体装置的立体图。
图8是第2实施例的半导体装置的等效电路图。
图9是沿着图7的IX-IX线的第2实施例的半导体装置的剖视图。
图10是沿着图7的X-X线的剖视图。
图11是绝缘体块的局部放大立体图。
具体实施方式
第1实施例
参照图1至图4对第1实施例的半导体装置2进行说明。图1表示半导体装置2的立体图。半导体装置2是在树脂制的封装3中密封了两个半导体芯片的功率模块。图2表示除了封装3以外的半导体装置2的分解立体图。图3表示沿着图1的III-III线的剖视图,图4表示沿着图1的IV-IV线的剖视图。图3表示横截半导体芯片10a、10b的截面。图4表示横截半导体芯片10a的截面。为了便于说明,将图中的坐标系的+Z方向定义为“上”,将-Z方向定义为“下”。
半导体装置2除了封装3以外还具备正极金属板20、负极金属板30、两个半导体芯片10a、10b、陶瓷块40、铜块4。以下有时将正极金属板20和负极金属板30一起称为一对金属板20、30。
封装3为扁平,在两个宽幅面的一方露出正极金属板20,在另一方的宽幅面露出负极金属板30。正极端子21和负极端子31从夹在宽幅面之间的一个窄幅面(上表面)延伸,多个控制端子33从下表面延伸。控制端子33由导电性的金属制作。在宽幅面露出的正极金属板20和负极金属板30在封装3的内部与半导体芯片10a、10b热连接,兼作释放半导体芯片10a、10b的热的散热器。
半导体芯片10a、10b是晶体管与二极管反向并联连接的RC-IGBT(Reverse-Conducting Insulated Gate Bipolar Transistor;反向导通绝缘栅双极型晶体管)。RC-IGBT经常使用电压转换器、变换器等。半导体芯片10a、10b为平板型,在第1面露出集电极电极12,在第2面露出发射极电极13。在第1面除了集电极电极12以外还设置有栅极电极、感应发射极电极(sense emitter electrode)等多个控制电极14。
陶瓷块40从正极金属板20的法线方向(图中的X方向)观察,形成E字形状,具有包围三边的2处缝隙(slit)41a、41b。正极金属板20与陶瓷块40的第1面接触,负极金属板30与陶瓷块40的作为相反侧的面的第2面接触。换言之,陶瓷块40被正极金属板20与负极金属板30夹着。在陶瓷块40的一方的缝隙41a配置半导体芯片10a和铜块4,在另一方的缝隙41b配置半导体芯片10b和另一铜块4。半导体芯片10a与铜块4一起被夹在正极金属板20与负极金属板30之间。半导体芯片10b也与另一铜块4一起被夹在正极金属板20与负极金属板30之间。
铜块4通过焊料52接合于半导体芯片10a的集电极电极12,负极金属板30通过焊料53接合于集电极电极12的相反侧的发射极电极13。正极金属板20通过焊料51接合于铜块4的与半导体芯片10a相反侧。
铜块4通过焊料52接合于半导体芯片10b的集电极电极12,负极金属板30通过焊料53接合于集电极电极12的相反侧的发射极电极13。正极金属板20通过焊料51接合于铜块4的与半导体芯片10b相反侧。
半导体芯片10a、10b通过一对金属板20、30被并联连接。正极端子21从正极金属板20的边缘延伸,正极端子21向封装3外延伸。负极端子31从负极金属板30的边缘延伸,负极端子31向封装3外延伸。半导体装置2虽然内置有两个半导体芯片10a、10b,但两个半导体芯片10a、10b被并联连接,半导体装置2宛如一个半导体芯片那样进行工作。半导体装置2由于能够对两个半导体芯片10a、10b分散负荷,因此容许电力大。半导体装置2适合应对大电力的电力变换器。
如图4所示,控制电极14经由接合线34与控制端子33连接。
陶瓷块40将一对金属板20、30保持平行地对置的状态。半导体装置2,在通过注塑成型对封装3进行成型之前,通过焊料51~53将半导体芯片10a、10b和铜块4接合于一对金属板20、30。通过陶瓷块40,一对金属板20、30的平行自接合前便保持。在被保持平行的一对金属板20、30之间使焊料材料熔融,来将半导体芯片10a、10b、铜块4接合。基于焊料材料的接合通过回流工艺(reflow process)进行。即使焊料熔融,一对金属板20、30的平行也被保持。另外,在被保持为平行的一对金属板20、30之间,焊料材料熔化并凝固,所以能够获得均匀厚度的焊料层。即使在使焊料51~53熔融时不使用夹具也能保持一对金属板20、30的平行并能够使得焊料51~53的厚度均匀,这是陶瓷块40的一个优点。
此外,在陶瓷块40的包围三边的缝隙41a(41b)配置半导体芯片10a(10b),也起到决定半导体芯片10a(10b)的位置的作用。这一点也是陶瓷块40的另一优点。
另外,通过对树脂制的封装3埋入陶瓷块40,还能够减少作为封装材料的树脂的量。
在两面露出金属板的半导体装置2有时在两面紧贴冷却器来使用。在从两面按压了冷却器的半导体装置2中,陶瓷块40还对封装3的强度有利。
此外,从封装3露出的一对金属板20、30还兼作半导体芯片10a、10b的端子,因此通过阳极接合法等使绝缘薄板贴合于露出的表面即可。绝缘薄板的贴合在基于注塑成型的封装3形成之前进行即可。绝缘薄板例如可以是将Si2Al、ALN等作为材料的板。
图5表示变形例的半导体装置2a的剖视图。在半导体装置2a中,陶瓷块40a的形状与之前的陶瓷块40不同。陶瓷块40a在缝隙41a、41b的内侧面具备台阶差43。台阶差43有助于决定从X方向观察比半导体芯片10a、10b小的铜块4的位置。陶瓷块40a通过台阶差43以小间隙包围铜块4,减少接合前的铜块4的可动余量。陶瓷块40a不仅决定半导体芯片10a、10b的平面方向的位置,还能够决定铜块4的平面方向的位置。
图6表示另一变形例的包括陶瓷块40b的半导体装置2b的分解立体图。图6与图2同样是除去封装3的状态。陶瓷块40b分为3个陶瓷柱45a、45b、45c。陶瓷柱45a和45b位于半导体芯片10a的两侧。陶瓷柱45b、45c位于半导体芯片10b的两侧。陶瓷块40b关于图中的坐标系中的Y方向,能够决定半导体芯片10a、10b的位置。陶瓷块优选从金属板20、30的法线方向(X方向)观察时包围半导体芯片的三边,但从法线方向观察时只要位于两侧方向就对定位有利。
第2实施例
参照图7~图11对第2实施例的半导体装置2c进行说明。第1实施例的半导体装置2在半导体装置2的封装3中容纳有并联连接的两个半导体芯片10a、10b。第2实施例的半导体装置2c在封装103中容纳有6个半导体芯片10a~10f。对于6个半导体芯片10a~10f而言,每两个串联连接。3组串联连接被并联地连接。能够由1个半导体装置2c实现三相交流变换器的主要部件。
图7表示半导体装置2c的立体图,图8表示半导体装置2c的等效电路图。在图8中,标号10a~10f所表示的虚线矩形中的电路分别示出1个半导体芯片的等效电路。各个导体芯片具有晶体管91(IGBT)与二极管92反向并联连接的电路构造。上述电路构造是之前所述的RC-IGBT。半导体芯片10a与10b被串联连接,半导体芯片10c与10d被串联连接,半导体芯片10e与10f被串联连接。3组串联连接在正极端子121与负极端子131之间被并联连接。3组串联连接的各自的中点与输出端子9a~9c连接。
如图7所示,半导体装置2c与第1实施例的半导体装置2同样,具有扁平的封装103,正极金属板120和负极金属板130在封装103的宽幅面露出。其中,在图7中负极金属板130位于封装103的背面而看不见。正极端子121、负极端子131、输出端子9a~9c从作为窄幅面之一的上表面延伸,控制端子(陶瓷块的脚部61a、61b)从下表面延伸。控制端子共计6组,分别与1个半导体芯片连接。
图9示出沿图7的IX-IX线的剖视图,图10示出沿图7的X-X线的剖视图。半导体装置2c的内部在对置的一对金属板120、130的法线方向(图中的X方向)形成双层构造。一对金属板120、130之间夹着6个半导体芯片10a~10f、3张中间金属板8a~8c、两个陶瓷块60a、60b、多个铜块4。图10示出通过半导体芯片10a、10b的截面。
在正极金属板120与第1中间金属板8a之间夹着铜块4和半导体芯片10a。半导体芯片10a为与第1实施例的芯片相同的平板型,集电极电极在一方的宽幅面露出,发射极电极在另一方的宽幅面露出。在一方的宽幅面还设置有控制电极14。在图9中,省略集电极电极和发射极电极的标号,在图中,在半导体芯片10a的下侧的面设置有集电极电极和控制电极,在上侧的面设置有发射极电极。对于其他的半导体芯片也同样。
在半导体芯片10a的集电极电极通过焊料52接合铜块4,在集电极电极的相反侧的发射极电极通过焊料53接合第1中间金属板8a。铜块4的与半导体芯片10a相反侧通过焊料51接合正极金属板120。
在与正极金属板120相反侧,在第1中间金属板8a与负极金属板130之间夹着铜块4和半导体芯片10b。半导体芯片10b为与第1实施例的芯片相同的平板型,集电极电极在一方的宽幅面露出,发射极电极在另一方的宽幅面露出。在一方的宽幅面也设置有控制电极。
在半导体芯片10b的集电极电极通过焊料55接合铜块4,在集电极电极的相反侧的发射极电极通过焊料56接合负极金属板130。在铜块4的与半导体芯片10b相反侧通过焊料54接合第1中间金属板8a。
半导体芯片10a、10b夹着第1中间金属板8a串联连接。半导体芯片10a位于高电位侧,半导体芯片10b位于低电位侧。半导体芯片10a与10b的串联连接被夹在正极金属板120与负极金属板130间。半导体芯片10a、10b的集电极电极和发射极电极通过焊料51~56和铜块4与正极金属板120和负极金属板130连接。
半导体芯片10c、10d和第2中间金属板8b也具有与半导体芯片10a、10b和第1中间金属板8a相同的构造。半导体芯片10c、10d夹着第2中间金属板8b被串联连接。半导体芯片10c位于高电位侧,半导体芯片10d位于低电位侧。半导体芯片10c与10d的串联连接被夹在正极金属板120与负极金属板130间。半导体芯片10c、10d的集电极电极和发射极电极通过焊料51~56和铜块4与正极金属板120和负极金属板130连接。
半导体芯片10e、10f和第3中间金属板8c也具有与半导体芯片10a、10b和第1中间金属板8a相同的构造。半导体芯片10e、10f夹着第3中间金属板8c被串联连接。半导体芯片10e位于高电位侧,半导体芯片10f位于低电位侧。半导体芯片10e与10f的串联连接被夹在正极金属板120与负极金属板130间。半导体芯片10e、10f的集电极电极和发射极电极通过焊料51~56和铜块4与正极金属板120和负极金属板130连接。
如上所述,两个半导体芯片的串联连接的组共3组在正极金属板120与负极金属板130之间被并联连接。
6个半导体芯片10a~10f和3个中间金属板8a~8c被密封于树脂制的封装103。
正极端子121与正极金属板120的边缘相连,负极端子131与负极金属板130的边缘相连。如图7所示,正极端子121和负极端子131从封装103的上表面向外延伸。
第1输出端子9a与第1中间金属板8a相连。同样地,第2输出端子9b与第2中间金属板8b相连,第3输出端子9c与第3中间金属板8c相连。3个输出端子9a~9c如图7所示那样从封装103的上表面向外延伸。
如上述那样,半导体装置2c实现以图8的等效电路表示的电路,由1个半导体装置2c能够构成变换器。
在正极金属板120与3个中间金属板8a~8c之间夹着陶瓷块60a。陶瓷块60a的第1面与正极金属板120接触,作为相反侧的面的第2面与中间金属板8a~8c接触。陶瓷块60a设置有包围三边的缝隙,在上述缝隙配置有半导体芯片。陶瓷块60a具备3个缝隙,3个半导体芯片10a、10c、10e分别位于3个缝隙中的一个缝隙。
通过陶瓷块60a,正极金属板120和中间金属板8a~8c被保持为平行。因此,与第1实施例的半导体装置2同样地,即使焊料51~53熔融,也保持正极金属板120与中间金属板8a~8c的平行。此外,焊料51~53的各层的厚度保持固定。
在负极金属板130与3个中间金属板8a~8c之间夹着陶瓷块60b。陶瓷块60b的第1面与负极金属板130接触,作为相反侧的面的第2面与中间金属板8a~8c接触。在陶瓷块60b设置有包围三边的缝隙,在上述缝隙配置有半导体芯片。陶瓷块60b具备3个缝隙,3个半导体芯片10b、10d、10f分别位于3个缝隙中的一个。
通过陶瓷块60b,负极金属板130与中间金属板8a~8c被保持平行。因此,与第1实施例的半导体装置2同样地,即使焊料54~56熔融,也保持负极金属板130与中间金属板8a~8c的平行。此外,焊料54~56的各层的厚度保持固定。
半导体装置2c为双层构造,在正极金属板120与负极金属板130之间夹着中间金属板8a(8b、8c),正极金属板120、负极金属板130与中间金属板8a(8b、8c)平行。陶瓷块60a、60b即使在焊料的熔融时也保持正极金属板120、负极金属板130与中间金属板8a(8b、8c)的平行。
在陶瓷块60a设置有从封装103的内部向外延伸的多个脚部61a。图11表示陶瓷块60a的局部放大立体图。图11是缝隙69的周围的放大图。在缝隙69配置半导体芯片10a。图11中还描绘出半导体芯片10a。请注意图11中在右侧与左侧,坐标轴的方向不同。与第1实施例同样地,在包围三边的缝隙69中配置半导体芯片10a,从而半导体芯片10a在YZ平面内的位置被确定。
多个脚部61a从架设在陶瓷块60a的缝隙69的边缘的脚部基部61c延伸,脚部基部61c在半导体芯片10a配置于缝隙69时与半导体芯片10a的控制电极14对置。从脚部基部61c的与控制电极14对置的位置到脚部61a的前端设置有导电层62。图11中为了帮助理解而将导电层62以灰色示出。导电层62使用印刷技术形成在脚部61a的表面。
脚部61a与导电层62一起延伸到封装103外(参照图10)。半导体芯片10a被配置于缝隙69,在半导体芯片10a通过焊料51~53与其他部件接合时,控制电极14与导电层62的上端62a接合。控制电极14通过未图示的焊料凸块与导电层62的上端62a接合。导电层62经由焊料凸块与控制电极14导通。通过延伸到封装103外的脚部61a和导电层62,半导体芯片10a的控制电极14与外部的器件连接。
在第1实施例的半导体装置2中,控制电极14通过接合线34和控制端子33与外部的器件连接(参照图4)。在第2实施例的半导体装置2c中,在保持一对金属板的平行的陶瓷块60a设置脚部61a,起到控制端子的作用。半导体装置2c由于在将控制电极14与外部连接的导电路径不需要接合线34,因此能够抑制制造成本。
对于其他半导体芯片10c、10e,陶瓷块60a也具备同样的脚部61a和导电层62。陶瓷块60b也具有与陶瓷块60a的脚部61a相同构造的脚部61b。
通过脚部基部61c,缝隙69的一部分被缩窄。在缝隙69的空间配置与半导体芯片10a的集电极电极12接合的铜块4。通过脚部基部61c而缩窄的缝隙69的空间有助于铜块4的定位。
在具有3张金属板对置且平行配置的双层构造的半导体装置中,难以保持正中间的金属板的平行。第2实施例的半导体装置2c由于两个陶瓷块60a、60b从两侧夹持中间金属板8a~8c,所以能够保持中间金属板8a~8c的平行。
说明与实施例中说明的技术相关的注意点。实施例的半导体装置在封装中容纳RC-IGBT的半导体芯片。本发明也可以使用具有其他功能的半导体芯片。此外,在本发明中,容纳于封装的半导体芯片的个数没有限制。在本发明中,对于被层叠方向的两端的金属板夹着的其他金属板的数量也没有限制。对于在层叠方向的两端的金属板间形成的半导体芯片的层数也没有限制。
陶瓷块40、60a、60b是绝缘体块的一个例子。陶瓷块由于绝缘性高且刚性高因而适合于实施例的半导体装置。绝缘体块优选由陶瓷制成,但并不限于陶瓷。绝缘体块可以是被绝缘性的膜被覆的金属块。或者,绝缘体块可以由树脂制成。
第1实施例的正极金属板20是第1金属板的一个例子,负极金属板30是第2金属板的一个例子。第2实施例的正极金属板120是第1金属板的一个例子,负极金属板130是第3金属板的一个例子。中间金属板8a~8c为第2金属板的一个例子。
铜块4是使半导体芯片的电极与金属板导通的间隔件(spacer)。还可以代替铜块4而使用由其他导电材料制作出的间隔件。在半导体芯片的厚度大时,也可以不使用间隔件。
以上,详细说明了本发明的具体例,但这些只不过是例示,并不构成对权利要求范围的限定。权利要求范围所记载的技术中包含对以上例示的具体例进行各种变形、变更后的方案。本说明书或附图中说明的技术要素可以单独或者通过各种组合来发挥技术有用性,并不局限于申请提交时的权利要求中记载的组合。此外,本说明书或附图中例示的技术能够同时达成多个目的,达成多个目的中的一个目的本身具备技术有用性。
Claims (14)
1.一种半导体装置,其特征在于,具备:
以对置的方式配置的第1金属板和第2金属板;
第1半导体芯片,在所述第1半导体芯片的第1面露出第1电极,在所述第1半导体芯片的第2面露出第2电极,所述第1电极与所述第1金属板对置并且通过焊料与所述第1金属板连接,所述第2电极与所述第2金属板对置并且通过焊料与所述第2金属板连接;
与所述第1半导体芯片相邻的第1绝缘体块,所述第1绝缘体块的第1面与所述第1金属板接触,所述第1绝缘体块的相反侧的面即第2面与所述第2金属板接触;以及
容纳所述第1半导体芯片的封装,所述封装与所述第1金属板的连接所述第1半导体芯片的面和所述第2金属板的连接所述第1半导体芯片的面接触。
2.根据权利要求1所述的半导体装置,其特征在于,
从所述第1金属板的法线方向观察,所述第1绝缘体块至少位于所述第1半导体芯片的两侧。
3.根据权利要求2所述的半导体装置,其特征在于,
从所述法线方向观察,所述第1绝缘体块包围所述第1半导体芯片的三边。
4.根据权利要求2所述的半导体装置,其特征在于,
从所述法线方向观察,所述第1绝缘体块位于所述第1半导体芯片的两侧方向。
5.根据权利要求1~4中任一项所述的半导体装置,其特征在于,
在所述第1半导体芯片的所述第1面设置有第3电极,
所述第1绝缘体块具备与所述第3电极对置并且向所述封装的外部延伸的脚部,
在所述脚部的与所述第3电极对置的面设置有与所述第3电极连接并且向所述封装的外部延伸的导电层。
6.根据权利要求1~5中任一项所述的半导体装置,其特征在于,
所述第1电极与所述第1金属板电连接。
7.根据权利要求1~6中任一项所述的半导体装置,其特征在于,
还包括夹在所述第1电极与所述第1金属板之间的第1导电构件。
8.根据权利要求1~7中任一项所述的半导体装置,其特征在于,还包括:
第3金属板,相对于所述第2金属板位于与所述第1金属板相反侧且与所述第2金属板对置;
第2半导体芯片,所述第2半导体芯片被所述第2金属板与所述第3金属板夹着,在所述第2半导体芯片的第1面露出第3电极,在所述第2半导体芯片的第2面露出第4电极,所述第3电极与所述第2金属板对置并且通过焊料与所述第2金属板连接,所述第4电极与所述第3金属板对置并且通过焊料与所述第3金属板连接;以及
与所述第2半导体芯片相邻的第2绝缘体块,所述第2绝缘体块的第1面与所述第2金属板接触,所述第2绝缘体块的相反侧的面即第2面与所述第3金属板接触,
所述封装容纳所述第1半导体芯片和所述第2半导体芯片。
9.根据权利要求8所述的半导体装置,其特征在于,
在所述第1金属板与所述第3金属板之间并联连接有3组所述第1半导体芯片、所述第2金属板以及所述第2半导体芯片的组。
10.根据权利要求8或9所述的半导体装置,其特征在于,
在所述第1半导体芯片的所述第1面设置有第5电极,
在所述第2半导体芯片的所述第1面设置有第6电极,
所述第1绝缘体块具备与所述第5电极对置并且向所述封装的外部延伸的第1脚部,
所述第2绝缘体块具备与所述第6电极对置并且向所述封装的外部延伸的第2脚部,
在所述第1脚部的与所述第5电极对置的面设置有与所述第5电极连接并且向所述封装的外部延伸的导电层,
在所述第2脚部的与所述第6电极对置的面设置有与所述第6电极连接并且向所述封装的外部延伸的导电层。
11.根据权利要求8所述的半导体装置,其特征在于,
所述第3电极与所述第2金属板电连接。
12.根据权利要求8~11中任一项所述的半导体装置,其特征在于,
还包括夹在所述第3电极与所述第2金属板之间的第2导电构件。
13.根据权利要求1~7中任一项所述的半导体装置,其特征在于,
所述第1绝缘体块由陶瓷制成。
14.根据权利要求8~12中任一项所述的半导体装置,其特征在于,
所述第1绝缘体块以及所述第2绝缘体块由陶瓷制成。
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