CN110047735A - 金属结构湿制程处理方法、tft制备方法、tft及显示装置 - Google Patents

金属结构湿制程处理方法、tft制备方法、tft及显示装置 Download PDF

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Publication number
CN110047735A
CN110047735A CN201910259639.4A CN201910259639A CN110047735A CN 110047735 A CN110047735 A CN 110047735A CN 201910259639 A CN201910259639 A CN 201910259639A CN 110047735 A CN110047735 A CN 110047735A
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CN
China
Prior art keywords
metal structure
wet process
chamber
solution
tft
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Pending
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CN201910259639.4A
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English (en)
Chinese (zh)
Inventor
尹易彪
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TCL China Star Optoelectronics Technology Co Ltd
Original Assignee
Shenzhen China Star Optoelectronics Technology Co Ltd
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Publication date
Application filed by Shenzhen China Star Optoelectronics Technology Co Ltd filed Critical Shenzhen China Star Optoelectronics Technology Co Ltd
Priority to CN201910259639.4A priority Critical patent/CN110047735A/zh
Priority to PCT/CN2019/093612 priority patent/WO2020199395A1/fr
Publication of CN110047735A publication Critical patent/CN110047735A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
CN201910259639.4A 2019-04-02 2019-04-02 金属结构湿制程处理方法、tft制备方法、tft及显示装置 Pending CN110047735A (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201910259639.4A CN110047735A (zh) 2019-04-02 2019-04-02 金属结构湿制程处理方法、tft制备方法、tft及显示装置
PCT/CN2019/093612 WO2020199395A1 (fr) 2019-04-02 2019-06-28 Procédé de traitement par voie humide de structure métallique, procédé de fabrication de tft et tft

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201910259639.4A CN110047735A (zh) 2019-04-02 2019-04-02 金属结构湿制程处理方法、tft制备方法、tft及显示装置

Publications (1)

Publication Number Publication Date
CN110047735A true CN110047735A (zh) 2019-07-23

Family

ID=67275748

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201910259639.4A Pending CN110047735A (zh) 2019-04-02 2019-04-02 金属结构湿制程处理方法、tft制备方法、tft及显示装置

Country Status (2)

Country Link
CN (1) CN110047735A (fr)
WO (1) WO2020199395A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111258192A (zh) * 2020-02-11 2020-06-09 Tcl华星光电技术有限公司 光阻剥离装置及光阻剥离方法
CN111415865A (zh) * 2020-04-08 2020-07-14 Tcl华星光电技术有限公司 基板金属结构蚀刻方法、tft制备方法、tft以及显示装置
US11189504B2 (en) 2020-02-11 2021-11-30 Tcl China Star Optoelectronics Technology Co., Ltd. Photoresist stripping device and photoresist stripping method

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0455188A (ja) * 1990-06-22 1992-02-21 Ishikawajima Harima Heavy Ind Co Ltd バラストタンク内鋼構造部の防蝕法
US20010035346A1 (en) * 1998-04-24 2001-11-01 Keiichi Maeda Apparatus and method for electroplating
CN1678961A (zh) * 2002-08-22 2005-10-05 大金工业株式会社 剥离液
CN1697893A (zh) * 2002-06-28 2005-11-16 先进微装置公司 减少金属腐蚀的电化学方法处理衬底的装置与方法
CN102150242A (zh) * 2008-09-08 2011-08-10 三菱瓦斯化学株式会社 铜布线表面保护液及半导体电路元件的制造方法
CN102160151A (zh) * 2008-09-19 2011-08-17 三菱瓦斯化学株式会社 铜布线表面保护液及半导体电路的制造方法
CN102677139A (zh) * 2011-01-07 2012-09-19 诺发系统有限公司 用于经改进工艺稳定性及性能的电沉积系统的配置及操作方法
CN104342747A (zh) * 2013-08-06 2015-02-11 朗姆研究公司 用于在镍电镀槽液中保持pH值的装置和方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4079579B2 (ja) * 2000-06-23 2008-04-23 Nec液晶テクノロジー株式会社 ウェット処理装置
JP2008129233A (ja) * 2006-11-20 2008-06-05 Seiko Epson Corp 電気光学装置の製造方法
KR101312333B1 (ko) * 2009-07-03 2013-09-27 고쿠리츠다이가쿠호진 도호쿠다이가쿠 웨트 처리 장치 및 웨트 처리 방법
CN105702606B (zh) * 2016-03-03 2019-01-11 京东方科技集团股份有限公司 一种气液喷雾刻蚀设备及方法
CN106992135A (zh) * 2017-03-30 2017-07-28 深圳市芯思杰联邦国际科技发展有限公司 湿法腐蚀装置、湿法腐蚀方法和晶圆芯片
CN107316826B (zh) * 2017-06-09 2020-01-31 深圳市华星光电技术有限公司 湿法蚀刻设备

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0455188A (ja) * 1990-06-22 1992-02-21 Ishikawajima Harima Heavy Ind Co Ltd バラストタンク内鋼構造部の防蝕法
US20010035346A1 (en) * 1998-04-24 2001-11-01 Keiichi Maeda Apparatus and method for electroplating
CN1697893A (zh) * 2002-06-28 2005-11-16 先进微装置公司 减少金属腐蚀的电化学方法处理衬底的装置与方法
CN1678961A (zh) * 2002-08-22 2005-10-05 大金工业株式会社 剥离液
CN102150242A (zh) * 2008-09-08 2011-08-10 三菱瓦斯化学株式会社 铜布线表面保护液及半导体电路元件的制造方法
CN102160151A (zh) * 2008-09-19 2011-08-17 三菱瓦斯化学株式会社 铜布线表面保护液及半导体电路的制造方法
CN102677139A (zh) * 2011-01-07 2012-09-19 诺发系统有限公司 用于经改进工艺稳定性及性能的电沉积系统的配置及操作方法
CN104342747A (zh) * 2013-08-06 2015-02-11 朗姆研究公司 用于在镍电镀槽液中保持pH值的装置和方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111258192A (zh) * 2020-02-11 2020-06-09 Tcl华星光电技术有限公司 光阻剥离装置及光阻剥离方法
US11189504B2 (en) 2020-02-11 2021-11-30 Tcl China Star Optoelectronics Technology Co., Ltd. Photoresist stripping device and photoresist stripping method
CN111415865A (zh) * 2020-04-08 2020-07-14 Tcl华星光电技术有限公司 基板金属结构蚀刻方法、tft制备方法、tft以及显示装置

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WO2020199395A1 (fr) 2020-10-08

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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province

Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd.

Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province

Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd.

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Application publication date: 20190723