CN110047735A - 金属结构湿制程处理方法、tft制备方法、tft及显示装置 - Google Patents
金属结构湿制程处理方法、tft制备方法、tft及显示装置 Download PDFInfo
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- CN110047735A CN110047735A CN201910259639.4A CN201910259639A CN110047735A CN 110047735 A CN110047735 A CN 110047735A CN 201910259639 A CN201910259639 A CN 201910259639A CN 110047735 A CN110047735 A CN 110047735A
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- Prior art keywords
- metal structure
- wet process
- chamber
- solution
- tft
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 37
- 239000001301 oxygen Substances 0.000 abstract description 37
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- 238000004090 dissolution Methods 0.000 abstract description 6
- 239000000243 solution Substances 0.000 description 54
- 229910002092 carbon dioxide Inorganic materials 0.000 description 42
- 239000010949 copper Substances 0.000 description 30
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 28
- 239000003795 chemical substances by application Substances 0.000 description 12
- 239000001569 carbon dioxide Substances 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 239000010409 thin film Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 description 6
- 229910016525 CuMo Inorganic materials 0.000 description 6
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 3
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 102000004190 Enzymes Human genes 0.000 description 2
- 108090000790 Enzymes Proteins 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
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- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
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- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 description 1
- SBJKKFFYIZUCET-JLAZNSOCSA-N Dehydro-L-ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(=O)C1=O SBJKKFFYIZUCET-JLAZNSOCSA-N 0.000 description 1
- KRHAHEQEKNJCSD-UHFFFAOYSA-N Dihydroasparagusic acid Natural products OC(=O)C(CS)CS KRHAHEQEKNJCSD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 description 1
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 235000009754 Vitis X bourquina Nutrition 0.000 description 1
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- 239000011575 calcium Substances 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- JYGAZEJXUVDYHI-UHFFFAOYSA-N dihydroartemisininic acid Natural products C1CC(C)=CC2C(C(C)C(O)=O)CCC(C)C21 JYGAZEJXUVDYHI-UHFFFAOYSA-N 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 238000006056 electrooxidation reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
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- 235000013305 food Nutrition 0.000 description 1
- 239000000174 gluconic acid Substances 0.000 description 1
- 235000012208 gluconic acid Nutrition 0.000 description 1
- 239000008103 glucose Substances 0.000 description 1
- 235000014413 iron hydroxide Nutrition 0.000 description 1
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 235000021056 liquid food Nutrition 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 229910000595 mu-metal Inorganic materials 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
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- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- LSNNMFCWUKXFEE-UHFFFAOYSA-L sulfite Chemical compound [O-]S([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-L 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Thin Film Transistor (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910259639.4A CN110047735A (zh) | 2019-04-02 | 2019-04-02 | 金属结构湿制程处理方法、tft制备方法、tft及显示装置 |
PCT/CN2019/093612 WO2020199395A1 (fr) | 2019-04-02 | 2019-06-28 | Procédé de traitement par voie humide de structure métallique, procédé de fabrication de tft et tft |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201910259639.4A CN110047735A (zh) | 2019-04-02 | 2019-04-02 | 金属结构湿制程处理方法、tft制备方法、tft及显示装置 |
Publications (1)
Publication Number | Publication Date |
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CN110047735A true CN110047735A (zh) | 2019-07-23 |
Family
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Family Applications (1)
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CN201910259639.4A Pending CN110047735A (zh) | 2019-04-02 | 2019-04-02 | 金属结构湿制程处理方法、tft制备方法、tft及显示装置 |
Country Status (2)
Country | Link |
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CN (1) | CN110047735A (fr) |
WO (1) | WO2020199395A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111258192A (zh) * | 2020-02-11 | 2020-06-09 | Tcl华星光电技术有限公司 | 光阻剥离装置及光阻剥离方法 |
CN111415865A (zh) * | 2020-04-08 | 2020-07-14 | Tcl华星光电技术有限公司 | 基板金属结构蚀刻方法、tft制备方法、tft以及显示装置 |
US11189504B2 (en) | 2020-02-11 | 2021-11-30 | Tcl China Star Optoelectronics Technology Co., Ltd. | Photoresist stripping device and photoresist stripping method |
Citations (8)
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JPH0455188A (ja) * | 1990-06-22 | 1992-02-21 | Ishikawajima Harima Heavy Ind Co Ltd | バラストタンク内鋼構造部の防蝕法 |
US20010035346A1 (en) * | 1998-04-24 | 2001-11-01 | Keiichi Maeda | Apparatus and method for electroplating |
CN1678961A (zh) * | 2002-08-22 | 2005-10-05 | 大金工业株式会社 | 剥离液 |
CN1697893A (zh) * | 2002-06-28 | 2005-11-16 | 先进微装置公司 | 减少金属腐蚀的电化学方法处理衬底的装置与方法 |
CN102150242A (zh) * | 2008-09-08 | 2011-08-10 | 三菱瓦斯化学株式会社 | 铜布线表面保护液及半导体电路元件的制造方法 |
CN102160151A (zh) * | 2008-09-19 | 2011-08-17 | 三菱瓦斯化学株式会社 | 铜布线表面保护液及半导体电路的制造方法 |
CN102677139A (zh) * | 2011-01-07 | 2012-09-19 | 诺发系统有限公司 | 用于经改进工艺稳定性及性能的电沉积系统的配置及操作方法 |
CN104342747A (zh) * | 2013-08-06 | 2015-02-11 | 朗姆研究公司 | 用于在镍电镀槽液中保持pH值的装置和方法 |
Family Cites Families (6)
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---|---|---|---|---|
JP4079579B2 (ja) * | 2000-06-23 | 2008-04-23 | Nec液晶テクノロジー株式会社 | ウェット処理装置 |
JP2008129233A (ja) * | 2006-11-20 | 2008-06-05 | Seiko Epson Corp | 電気光学装置の製造方法 |
KR101312333B1 (ko) * | 2009-07-03 | 2013-09-27 | 고쿠리츠다이가쿠호진 도호쿠다이가쿠 | 웨트 처리 장치 및 웨트 처리 방법 |
CN105702606B (zh) * | 2016-03-03 | 2019-01-11 | 京东方科技集团股份有限公司 | 一种气液喷雾刻蚀设备及方法 |
CN106992135A (zh) * | 2017-03-30 | 2017-07-28 | 深圳市芯思杰联邦国际科技发展有限公司 | 湿法腐蚀装置、湿法腐蚀方法和晶圆芯片 |
CN107316826B (zh) * | 2017-06-09 | 2020-01-31 | 深圳市华星光电技术有限公司 | 湿法蚀刻设备 |
-
2019
- 2019-04-02 CN CN201910259639.4A patent/CN110047735A/zh active Pending
- 2019-06-28 WO PCT/CN2019/093612 patent/WO2020199395A1/fr active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0455188A (ja) * | 1990-06-22 | 1992-02-21 | Ishikawajima Harima Heavy Ind Co Ltd | バラストタンク内鋼構造部の防蝕法 |
US20010035346A1 (en) * | 1998-04-24 | 2001-11-01 | Keiichi Maeda | Apparatus and method for electroplating |
CN1697893A (zh) * | 2002-06-28 | 2005-11-16 | 先进微装置公司 | 减少金属腐蚀的电化学方法处理衬底的装置与方法 |
CN1678961A (zh) * | 2002-08-22 | 2005-10-05 | 大金工业株式会社 | 剥离液 |
CN102150242A (zh) * | 2008-09-08 | 2011-08-10 | 三菱瓦斯化学株式会社 | 铜布线表面保护液及半导体电路元件的制造方法 |
CN102160151A (zh) * | 2008-09-19 | 2011-08-17 | 三菱瓦斯化学株式会社 | 铜布线表面保护液及半导体电路的制造方法 |
CN102677139A (zh) * | 2011-01-07 | 2012-09-19 | 诺发系统有限公司 | 用于经改进工艺稳定性及性能的电沉积系统的配置及操作方法 |
CN104342747A (zh) * | 2013-08-06 | 2015-02-11 | 朗姆研究公司 | 用于在镍电镀槽液中保持pH值的装置和方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111258192A (zh) * | 2020-02-11 | 2020-06-09 | Tcl华星光电技术有限公司 | 光阻剥离装置及光阻剥离方法 |
US11189504B2 (en) | 2020-02-11 | 2021-11-30 | Tcl China Star Optoelectronics Technology Co., Ltd. | Photoresist stripping device and photoresist stripping method |
CN111415865A (zh) * | 2020-04-08 | 2020-07-14 | Tcl华星光电技术有限公司 | 基板金属结构蚀刻方法、tft制备方法、tft以及显示装置 |
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WO2020199395A1 (fr) | 2020-10-08 |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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Application publication date: 20190723 |