CN102778532B - 铝蚀刻液混酸浓度的电位滴定方法 - Google Patents
铝蚀刻液混酸浓度的电位滴定方法 Download PDFInfo
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- CN102778532B CN102778532B CN201210285189.4A CN201210285189A CN102778532B CN 102778532 B CN102778532 B CN 102778532B CN 201210285189 A CN201210285189 A CN 201210285189A CN 102778532 B CN102778532 B CN 102778532B
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- solution
- highly basic
- concentration
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- etching solution
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- 238000005530 etching Methods 0.000 title claims abstract description 71
- 239000004411 aluminium Substances 0.000 title claims abstract description 64
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 64
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000006396 nitration reaction Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 33
- 238000003918 potentiometric titration Methods 0.000 title claims abstract description 24
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 81
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 68
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 49
- 239000002253 acid Substances 0.000 claims abstract description 39
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 36
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 30
- 239000002904 solvent Substances 0.000 claims description 46
- 238000004448 titration Methods 0.000 claims description 44
- 235000011007 phosphoric acid Nutrition 0.000 claims description 37
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 claims description 28
- 235000019441 ethanol Nutrition 0.000 claims description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 19
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 12
- 239000012153 distilled water Substances 0.000 claims description 9
- 239000006228 supernatant Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- 238000005303 weighing Methods 0.000 claims description 8
- 238000004062 sedimentation Methods 0.000 claims description 6
- 238000003756 stirring Methods 0.000 claims description 5
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000007865 diluting Methods 0.000 claims description 4
- 238000003828 vacuum filtration Methods 0.000 claims description 4
- 239000000243 solution Substances 0.000 abstract description 105
- YLLIGHVCTUPGEH-UHFFFAOYSA-M potassium;ethanol;hydroxide Chemical compound [OH-].[K+].CCO YLLIGHVCTUPGEH-UHFFFAOYSA-M 0.000 abstract description 11
- 239000012457 nonaqueous media Substances 0.000 abstract description 4
- 229960000583 acetic acid Drugs 0.000 description 17
- 239000007864 aqueous solution Substances 0.000 description 3
- 239000003125 aqueous solvent Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000012362 glacial acetic acid Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 101100316902 Arabidopsis thaliana VEP1 gene Proteins 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical class [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- ZXTFQUMXDQLMBY-UHFFFAOYSA-N alumane;molybdenum Chemical compound [AlH3].[Mo] ZXTFQUMXDQLMBY-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N31/00—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods
- G01N31/16—Investigating or analysing non-biological materials by the use of the chemical methods specified in the subgroup; Apparatus specially adapted for such methods using titration
- G01N31/162—Determining the equivalent point by means of a discontinuity
- G01N31/164—Determining the equivalent point by means of a discontinuity by electrical or electrochemical means
Landscapes
- Health & Medical Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Physics & Mathematics (AREA)
- Electrochemistry (AREA)
- Molecular Biology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- ing And Chemical Polishing (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
Abstract
Description
Claims (2)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210285189.4A CN102778532B (zh) | 2012-08-10 | 2012-08-10 | 铝蚀刻液混酸浓度的电位滴定方法 |
PCT/CN2012/080481 WO2014023045A1 (zh) | 2012-08-10 | 2012-08-23 | 铝蚀刻液混酸浓度的电位滴定方法 |
US13/699,638 US8945934B2 (en) | 2012-08-10 | 2012-08-23 | Potentiometric titration method for measuring concentration of acid mixture of aluminum etchant |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210285189.4A CN102778532B (zh) | 2012-08-10 | 2012-08-10 | 铝蚀刻液混酸浓度的电位滴定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102778532A CN102778532A (zh) | 2012-11-14 |
CN102778532B true CN102778532B (zh) | 2016-03-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201210285189.4A Expired - Fee Related CN102778532B (zh) | 2012-08-10 | 2012-08-10 | 铝蚀刻液混酸浓度的电位滴定方法 |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN102778532B (zh) |
WO (1) | WO2014023045A1 (zh) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103604856B (zh) * | 2013-11-15 | 2015-11-25 | 深圳市华星光电技术有限公司 | 一种混酸溶液的电位滴定方法 |
CN103868866B (zh) * | 2014-03-12 | 2016-03-23 | 深圳市华星光电技术有限公司 | 蚀刻液浓度测量装置及方法 |
CN107132263A (zh) * | 2017-06-30 | 2017-09-05 | 深圳市华星光电技术有限公司 | 铝蚀刻液中铝离子含量的测试方法 |
CN107589216A (zh) * | 2017-08-25 | 2018-01-16 | 武汉华星光电半导体显示技术有限公司 | 刻蚀液浓度的监测系统及其滴定装置、监测方法 |
CN109406433A (zh) * | 2019-01-10 | 2019-03-01 | 惠科股份有限公司 | 一种检测铝蚀刻液中硝酸含量的方法 |
CN109738577A (zh) * | 2019-01-10 | 2019-05-10 | 惠科股份有限公司 | 一种检测铝蚀刻液中混酸含量的方法 |
CN111751491B (zh) * | 2020-07-24 | 2022-02-25 | 苏州市晶协高新电子材料有限公司 | 一种硅蚀刻液混酸浓度的分析方法 |
CN112108023A (zh) * | 2020-08-03 | 2020-12-22 | 中国原子能科学研究院 | 一种电位滴定用碱液的配制装置及方法 |
CN113358813A (zh) * | 2021-06-09 | 2021-09-07 | 合肥中聚合臣电子材料有限公司 | 盐酸和三氯化铁系ito蚀刻液组成的检测方法 |
CN113485494B (zh) * | 2021-07-01 | 2022-04-15 | 安徽普冈电子材料有限公司 | 阳极铝箔生产的混酸工艺系统 |
CN113759073A (zh) * | 2021-09-26 | 2021-12-07 | 山西沁新能源集团股份有限公司 | 一种混合酸的废液或回收液中多组分的分析检测方法 |
CN114264769B (zh) * | 2021-12-23 | 2024-02-20 | 江阴江化微电子材料股份有限公司 | 一种电子级混酸体系的组分浓度检测方法 |
CN115343410B (zh) * | 2022-08-10 | 2024-06-25 | 易安爱富(武汉)科技有限公司 | 一种含高氯酸的混酸蚀刻液中酸浓度定量的测定方法 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999012026A1 (fr) * | 1997-08-28 | 1999-03-11 | Nippon Kasei Chemical Company Limited | Procede d'analyse quantitative, analyseur quantitatif, procede de controle d'attaque pour fluide acide mixte en processus d'attaque, et production dudit fluide |
CN1614406A (zh) * | 2004-11-29 | 2005-05-11 | 华南师范大学 | 锂离子电池电解液中氢氟酸的定量分析方法 |
KR100816657B1 (ko) * | 2006-11-24 | 2008-03-26 | 테크노세미켐 주식회사 | 혼산액의 정량 분석 방법 |
CN102023197A (zh) * | 2010-11-09 | 2011-04-20 | 广西大学 | 小分子羧基酸和氨基酸的连续电位滴定分析方法 |
CN102087243A (zh) * | 2009-12-07 | 2011-06-08 | 立邦涂料(中国)有限公司 | 利用电位滴定法测定深色树脂的酸值的方法 |
JP2012058032A (ja) * | 2010-09-07 | 2012-03-22 | Nippon Kasei Chem Co Ltd | 硝酸含有混酸液中の硝酸分析方法 |
CN102534621A (zh) * | 2012-02-21 | 2012-07-04 | 上海正帆科技有限公司 | 一种酸性蚀刻液的处理方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1379288A (zh) * | 2001-04-03 | 2002-11-13 | 三菱化学株式会社 | 蚀刻方法以及蚀刻液的定量分析方法 |
-
2012
- 2012-08-10 CN CN201210285189.4A patent/CN102778532B/zh not_active Expired - Fee Related
- 2012-08-23 WO PCT/CN2012/080481 patent/WO2014023045A1/zh active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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WO1999012026A1 (fr) * | 1997-08-28 | 1999-03-11 | Nippon Kasei Chemical Company Limited | Procede d'analyse quantitative, analyseur quantitatif, procede de controle d'attaque pour fluide acide mixte en processus d'attaque, et production dudit fluide |
CN1614406A (zh) * | 2004-11-29 | 2005-05-11 | 华南师范大学 | 锂离子电池电解液中氢氟酸的定量分析方法 |
KR100816657B1 (ko) * | 2006-11-24 | 2008-03-26 | 테크노세미켐 주식회사 | 혼산액의 정량 분석 방법 |
CN102087243A (zh) * | 2009-12-07 | 2011-06-08 | 立邦涂料(中国)有限公司 | 利用电位滴定法测定深色树脂的酸值的方法 |
JP2012058032A (ja) * | 2010-09-07 | 2012-03-22 | Nippon Kasei Chem Co Ltd | 硝酸含有混酸液中の硝酸分析方法 |
CN102023197A (zh) * | 2010-11-09 | 2011-04-20 | 广西大学 | 小分子羧基酸和氨基酸的连续电位滴定分析方法 |
CN102534621A (zh) * | 2012-02-21 | 2012-07-04 | 上海正帆科技有限公司 | 一种酸性蚀刻液的处理方法 |
Non-Patent Citations (2)
Title |
---|
应用自动电位滴定仪测定水果中的可滴定酸;李文生等;《食品科学》;20090215;第30卷(第4期);第247页第1.1-1.3节 * |
混酸(硝酸、磷酸、冰醋酸)的电位滴定分析;陈旗;《浙江化工》;20080115;第39卷(第1期);第28-30页、第25页 * |
Also Published As
Publication number | Publication date |
---|---|
WO2014023045A1 (zh) | 2014-02-13 |
CN102778532A (zh) | 2012-11-14 |
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GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
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Denomination of invention: Potentiometric titration method of mixed acid concentration in aluminum etching liquid Effective date of registration: 20190426 Granted publication date: 20160309 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Registration number: 2019440020032 |
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Date of cancellation: 20201016 Granted publication date: 20160309 Pledgee: Bank of Beijing Limited by Share Ltd. Shenzhen branch Pledgor: Shenzhen China Star Optoelectronics Technology Co.,Ltd. Registration number: 2019440020032 |
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