CN110047735A - Metal structure wet process processing method, TFT preparation method, TFT and display device - Google Patents
Metal structure wet process processing method, TFT preparation method, TFT and display device Download PDFInfo
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The embodiment of the invention discloses a kind of metal structure wet process processing method, TFT preparation method, TFT and display devices.The metal structure wet process processing method include: in the chamber to wet process equipment gas or liquid handle, to reduce O in chamber2Or/and CO2Content；The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber.By being vacuumized and sealed to chamber in the embodiment of the present invention, and it is filled with the first inactive gas into chamber, makes to form positive pressure in chamber, reduce O in chamber and solution2Content, so that " oxygen concentration cell " effect weakens；On the other hand CO is reduced2Content makes solution pH value closer to neutrality, to slow down the dissolution of corrosion product, reaches and weakens metal structure galvanic corrosion purpose.
Description
Technical field
The present invention relates to technical field of semiconductor, and in particular to a kind of metal structure wet process processing method, TFT system
Preparation Method, TFT and display device.
Background technique
Science and technology flourishes now, and information product type is weeded out the old and bring forth the new, and meets public different demand.Early stage display
It mostly is cathode-ray tube (Cathode Ray Tube, CRT) display, due to its bulky big, Er Qiesuo with power consumption
The radiation of generation is for user of the long-time using display, the problem of harmful body.Therefore, now on the market
Display will be replaced old CRT monitor by liquid crystal display (Liquid Crystal Display, LCD) gradually, and with
Size ceaselessly do greatly, at urgent problem, the exploitation of metal structure conducting wire is come into being for the delay of electrode cable.
Metal structure conducting wire is usually used in thin film transistor (TFT), can be used as gate electrode, gate lines, data lines, source/drain
Deng.Currently, metal structure is passed through frequently with more metal layer knots in thin film transistor (TFT) (Thin-film transistor, TFT)
Structure, but more metal-layer structures are easy to produce some problems, by taking CuMu metal structure as an example, come to existing CuMo metal structure
It says, has the following problems the potential difference due to Cu and Mo in electrolyte solution, unavoidably will form electrochemistry corruption
Erosion, and then galvanic corrosion is generated, because CuMo galvanic corrosion will lead to, Cu is emptied and performance declines phenomenon, and Cu, which is emptied, will lead to medicine
Liquid residual, formed copper ion solution influence channel, in addition, it is serious empty or performance decline have film breakage and generate Electro-static Driven Comb
ESD (Electro-Static discharge, ESD) risk.
Summary of the invention
The embodiment of the present invention provides a kind of metal structure wet process processing method, TFT preparation method, TFT and display device,
Reduce O in chamber and solution2And CO2Content so that " oxygen concentration cell " effect weaken；On the other hand CO is reduced2Content makes
Solution pH value is closer to neutrality, to slow down the dissolution of corrosion product, reaches and weakens metal structure galvanic corrosion purpose.
To solve the above problems, in a first aspect, the application provides a kind of metal structure wet process processing method, the method
Include:
Gas in the chamber of wet process equipment or liquid are handled, to reduce O in the chamber2Or/and CO2Content；
The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber.
Further, gas or liquid are handled in the chamber to wet process equipment, to reduce in the chamber
O2Or/and CO2Content, comprising:
The chamber of wet process equipment is vacuumized and sealed, the chamber air content is reduced, described in reducing
O in chamber2And CO2Content.
Further, gas or liquid are handled in the chamber to wet process equipment, to reduce in the chamber
O2Or/and CO2Content, comprising:
It is filled with the first inactive gas into the chamber, makes to form positive pressure in the chamber, to prevent spray metal knot
The O when solution of structure wet process, in air2And CO2It is dissolved in the solution of metal structure wet process in into the chamber.
Further, the method also includes:
The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Before, the second inactive gas is filled in the solution of the metal structure wet process to replace the solution of metal structure wet process
In O2And CO2, reduce O2And CO2Meltage in the solution of the metal structure wet process.
Further, the method also includes:
The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Before, gas remover is added, in the chamber to reduce O in the chamber2Or CO2Content.
Further, the gas remover is deoxidier or carbon dioxide removal agent.
Further, the method also includes:
The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Before, the solution of the metal structure wet process is stirred, O in the solution to accelerate the metal structure wet process2Migration.
Further, the metal structure is that there are more metal-layer structures that potential difference easily causes corrosion for internal structure.
Further, the metal structure be Mo/Cu metal structure, Mo/Al/Mo metal structure, Mo/Al metal structure,
Nb/Cu metal structure, Ti/Cu metal structure or Ni/Cu metal structure.
Second aspect, the application also provide a kind of TFT preparation method, and the TFT preparation method includes as in first aspect
Any metal structure wet process processing method.
The third aspect, the application also provide a kind of TFT, and the TFT uses the TFT preparation method as described in second aspect
It is prepared.
Fourth aspect, the application also provide a kind of display device, include as described in the third aspect in the display device
TFT。
Present invention method is handled by gas in the chamber to wet process equipment or liquid, to reduce chamber
Interior O2 or/and CO2 content；The wet system of the metal structure is sprayed on the substrate to be processed including metal structure in the chamber
On the one hand the solution of journey reduces O in chamber and solution2Content, so that " oxygen concentration cell " effect weakens；On the other hand it reduces
CO2Content makes solution pH value closer to neutrality, to slow down the dissolution of corrosion product, reaches and weakens metal structure galvanic corrosion
Purpose.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those skilled in the art, without creative efforts, it can also be obtained according to these attached drawings other attached
Figure.
Fig. 1 is Cu/Mo metal structure in existing Cu processing procedure, since corrosion potential of the Cu and Mo in electrolyte solution is poor
It is different, it unavoidably will form electrochemical corrosion, form the structural schematic diagram that Cu is emptied；
Fig. 2 is one embodiment flow diagram of metal structure wet process processing method provided in an embodiment of the present invention；
Fig. 3 is another embodiment process signal of metal structure wet process processing method provided in an embodiment of the present invention
Figure；
Fig. 4 is the schematic illustration of Cu/Mo metal structure oxygen uptake burn into " oxygen concentration cell " effect.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those skilled in the art's every other implementation obtained without creative efforts
Example, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
The instruction such as " thickness ", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside"
Orientation or positional relationship be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention and simplification retouch
It states, rather than the device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation,
Therefore it is not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only, and cannot understand
For indication or suggestion relative importance or implicitly indicate the quantity of indicated technical characteristic.Define as a result, " first ",
The feature of " second " can explicitly or implicitly include one or more feature.In the description of the present invention, " more
It is a " it is meant that two or more, unless otherwise specifically defined.
In this application, " exemplary " word is used to indicate " being used as example, illustration or explanation ".Described herein as
Any embodiment of " exemplary " is not necessarily to be construed as or more advantage more more preferable than other embodiments.In order to appoint this field
What technical staff can be realized and use the present invention, gives and is described below.In the following description, it arranges for purposes of explanation
Details is gone out.It should be appreciated that those skilled in the art will realize that the case where not using these specific details
Under the present invention also may be implemented.In other examples, well known structure and process will not be described in detail, to avoid need not
The details wanted makes description of the invention become obscure.Therefore, the present invention be not intended to be limited to shown in embodiment, but with meet
The widest scope of principle and feature disclosed in the present application is consistent.
Currently, metal structure is passed through frequently with more metals in thin film transistor (TFT) (Thin-film transistor, TFT)
Layer structure, but more metal-layer structures are easy to produce some problems, by taking Cu/Mu metal structure as an example, to existing Cu/Mo metal knot
For structure, has the following problems the potential difference due to Cu and Mo in electrolyte solution, unavoidably will form electrification
Corrosion is learned, and then generates galvanic corrosion, because Cu/Mo galvanic corrosion will lead to Cu and empty and performance Undercut phenomenon, such as Fig. 1
Shown, there is Cu and empties in encircled portion in figure, and Cu, which is emptied, will lead to liquor residue, and forming copper ion solution influences channel, in addition,
It is serious empty or performance decline have film breakage and generate Electro-static Driven Comb ESD (Electro-Static discharge, ESD) wind
Danger.
There is provided based on this, in the embodiment of the present invention a kind of metal structure wet process processing method, TFT preparation method, TFT and
Display device is described in detail separately below.
Firstly, a kind of metal structure wet process processing method is provided in the embodiment of the present invention, this method comprises: to wet process
Gas or liquid are handled in the chamber of equipment, to reduce O in the chamber2Or/and CO2Content, to packet in the chamber
Include the solution that the metal structure wet process is sprayed on the substrate to be processed of metal structure.
As shown in Fig. 2, for one embodiment process signal of metal structure wet process processing method in the embodiment of the present invention
Figure, this method comprises:
201, gas in the chamber of wet process equipment or liquid are handled, to reduce O in the chamber2Or/and CO2
Content.
Wet process is by treatment fluid, such as various chemical liquids or water spray as the production process in production circuit boards
It spills in surface of circuit substrate, to realize de-smear, chemical copper, plated-through-hole, etching, development, stripping, plating organic protective film, surface
The process flows such as modified or cleaning.Wet process equipment is exactly the equipment for executing wet process, and the accessory inside wet process equipment is wet
Process apparatus accessory.During manufacturing display panel, there is multiple tracks processing procedure to will use wet process equipment, wet process equipment master
If allowing base plate carrying on a conveyer belt, and via the transmission of transmission mechanism (roller), allow substrate by sprinkling medical fluid or
The wet section of aqueous, to allow the liquid of sprinkling uniformly to wash away the substrate, and the difference of the liquid according to sprinkling, it can to substrate
Carry out different wet process processing operations.In the embodiment of the present invention, wet process and wet process equipment can be any of the above-described description
The corresponding wet process equipment of wet process, including but not limited to de-smear, chemical copper, plated-through-hole, etching, development, stripping, be coated with
Process flows and the corresponding wet process equipments of each process flow such as machine protective film, surface modification or cleaning.
The chamber of wet process equipment is subsequent wet to the substrate to be processed progress including metal structure in the embodiment of the present invention
The chamber of processing procedure.
202, the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Solution.
Present invention method is handled by gas in the chamber to wet process equipment or liquid, to reduce chamber
Interior O2Or/and CO2Content；The wet system of the metal structure is sprayed on the substrate to be processed including metal structure in the chamber
On the one hand the solution of journey reduces O in chamber and solution2Content, so that " oxygen concentration cell " effect weakens；On the other hand it reduces
CO2Content makes solution pH value closer to neutrality, to slow down the dissolution of corrosion product, reaches and weakens metal structure galvanic corrosion
Purpose.
In the embodiment of the present invention, gas in the chamber of wet process equipment or liquid are handled in step 201, to reduce
O in the chamber2Or/and CO2Content may include one or more implementations, specific as follows:
(1) chamber of wet process equipment is vacuumized and is sealed, the chamber air content is reduced, to reduce
State O in chamber2And CO2Content.
(2) it is filled with the first inactive gas in Xiang Suoshu chamber, makes to form positive pressure in the chamber, to prevent spray metal
The O when solution of structure wet process, in air2And CO2It is dissolved in the solution of metal structure wet process in into the chamber.
(3) it is filled with the first inactive gas in Xiang Suoshu chamber, makes to form positive pressure in the chamber, to prevent spray metal
The O when solution of structure wet process, in air2And CO2It is dissolved in the solution of metal structure wet process in into the chamber.
(4) the molten of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Before liquid, the second inactive gas is filled in the solution of the metal structure wet process to replace the molten of metal structure wet process
O in liquid2And CO2, reduce O2And CO2Meltage in the solution of the metal structure wet process.
As shown in figure 3, another embodiment process for metal structure wet process processing method in the embodiment of the present invention is shown
It is intended to, this method comprises:
301, the chamber of wet process equipment is vacuumized and is sealed, to reduce the chamber air content.
302, it is filled with the first inactive gas in Xiang Suoshu chamber, makes to form positive pressure in the chamber, to prevent in air
O2And CO2It is dissolved in the solution of metal structure wet process in into the chamber.
Specifically, the first inactive gas described in the embodiment of the present invention may include one or more torpescence gas
Body, such as argon gas and nitrogen etc., first inactive gas can may be the torpescence under current environment for inert gas
The inactive gas of chemical property, such as nitrogen etc. under gas, such as room temperature.
303, the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber
Solution.
Under normal circumstances, in the preparation process of display panel, metal structure, such as grid electricity can be formed on substrate
Then pole, gate lines, data lines, source/drain etc. as needed can carry out the substrate to be processed for including metal structure as above
Some wet process techniques.Metal structure is multi-layer metal structure in the embodiment of the present invention, specifically, the metal structure is
There are more metal-layer structures that potential difference easily causes corrosion for internal structure because in the metal structure internal different layers metal
Structure easily causes to corrode there are potential difference, and such situation needs avoid, specifically, for example, the metal structure can be Cu/
Mo metal structure, Mo/Al/Mo metal structure, Al/Mo metal structure, Cu/Nb metal structure, Cu/Ti metal structure or Cu/
Ni metal structure etc..
In the embodiment of the present invention, the solution of metal structure wet process can be etching solution, pure water according to the difference of wet process
Or stripper etc., it can be specifically not described in detail herein depending on the case where specific wet process.
Under conventional scenario, oxygen uptake corrosion easily occurs in wet process for metal structure, generates " oxygen concentration difference inside and outside corrosion gap
Battery " effect aggravation corrosion, wherein " oxygen concentration cell " effect, that is, oxygen concentration cell corrosion, the different parts of metal structure with
The different solution of oxygen content is in contact, and corrodes caused by formation oxygen concentration cell (also known as inflating uneven battery), for example, by
Oxygen is uneven inside and outside corrosion of metal structure gap, and since gap is small, oxygen cannot be easily entered in corrosion gap, but gap
External oxygen but can guarantee sufficient supply, such " unbalanced ", results in gap inside/outside and forms " oxygen concentration cell ", stitch
The outer oxygen concentration of gap is high, is cathode, and oxygen concentration is low in gap, is anode, and the metal allowed in gap in this way accelerates corrosion, constantly
Consumption.As shown in figure 4, specific corrosion principle is as follows by taking Cu/Mo metal structure as an example:
O2+H2O+4e-→4OH-；
Cu→CU2++2e-；
Cu+H2O+CO2+O2=Cu2(OH)2CO3；
It is Cu/Mo alloy at Cu metal and Mo metal bonding, Cu/Mo alloy different parts are different from oxygen content (such as to be had
Position anoxic, some positions are oxygen-enriched) solution be in contact, form oxygen concentration cell (also known as inflating uneven battery) and cause
Corrosion.
By being vacuumized and sealed to chamber in the embodiment of the present invention, and the first torpescence gas is filled with into chamber
Body makes to form positive pressure in chamber, on the one hand reduces O in chamber and solution2Content, so that oxygen content is all low in whole solution,
" oxygen concentration cell " effect weakens；On the other hand CO is reduced2Content makes solution pH value closer to neutrality, to slow down corrosion
The dissolution of product reaches and weakens metal structure galvanic corrosion purpose.
In some embodiment of the invention, metal structure wet process processing method can also be further in the embodiment of the present invention
Include: in the chamber to include metal structure substrate to be processed on spray the metal structure wet process solution it
Before, it is filled in the solution of the metal structure wet process in solution of second inactive gas to replace metal structure wet process
O2And CO2, reduce O2And CO2Meltage in the solution of the metal structure wet process.By wet in the metal structure
It is filled with the second inactive gas in the solution of processing procedure, reduces O2And CO2Dissolution in the solution of the metal structure wet process
Amount, so that can further weaken " oxygen concentration cell " effect when the solution of the subsequent spray metal structure wet process, and
Weaken metal structure galvanic corrosion.
Likewise, the second inactive gas described in the embodiment of the present invention may include one or more torpescence gas
Body, such as argon gas and nitrogen etc., second inactive gas can may be the torpescence under current environment for inert gas
The inactive gas of chemical property, such as nitrogen etc. under gas, such as room temperature.Specifically, second inactive gas can be with
First inactive gas is identical, can also be different, and can specifically be determined according to practical application scene, is not construed as limiting herein.
In the embodiment of the present invention when it is implemented, in order to further decrease O in the chamber2Or CO2Content, in the present invention
In some embodiments, metal structure wet process processing method be can further include in the embodiment of the present invention: in the chamber
Before solution of the introversion including spraying the metal structure wet process on the substrate to be processed of metal structure, add in the chamber
Enter gas remover, to reduce O in the chamber2Or CO2Content.O in the chamber is eliminated by gas remover2Or CO2,
To reduce O in the chamber2Or CO2Content.Further, the gas remover can be deoxidier or carbon dioxide removal agent.
Wherein, deoxidier is for eliminating O in the chamber2, deoxidier also known as deoxidant, oxygen absorbent are absorbable oxygen
Additive.It is one group of chemical mixture easily to react with free oxygen or dissolved oxygen, it mounted in have certain air permeability and
In the sealing space of intensity, it can remove in sealing space and remain aerial oxygen.Deoxidier is not only used to keep food at present
Quality, and the preservation of the classes article such as be also used for cereal, feed, drug, dress material, fur, precision instrument, antirust, anti-oxidation etc..
Deoxidier can be divided into two kinds according to its composition: (1) being the deoxidier based on inorganic matrix, such as reduced iron powder.Its principle is
Iron powder is oxidized to iron hydroxide in the presence of oxygen and vapor.For another example sulphite deoxidier, it is with Lian Erya
Sulfate is host agent, with Ca (OH)2It is secondary agent with activated carbon, is reacted in the environment for having water.It (2) is to be with organic substrate
Main body, such as enzyme, ascorbic acid, oleic acid.Ascorbic acid (AA) is reducing agent in itself, in the case where aerobic, uses copper ion
Making catalyst can be oxidized or hydroascorbic acid (DHAA), to remove the oxygen in environment, commonly use this method to remove liquid food
Oxygen in product, ascorbic acid deoxidier are at present using higher one kind of safety in deoxidier, and the most commonly used is Portugals for enzyme system deoxidier
The glycoxidative alcohol of grape is that oxygen is consumed when being oxidized to gluconic acid using glucose to reach deoxidation purpose.In the embodiment of the present invention
Deoxidier can use the deoxidier of above two type, and this is not limited here.
And carbon dioxide removal agent is called carbon dioxide removal agent, for removing the indoor CO of the chamber2, the embodiment of the present invention
Middle carbon dioxide removal agent can use such as calcium oxide, calcium hydroxide, sodium hydroxide, soda lime.It should be noted that in this hair
In bright some embodiments, deoxidier or carbon dioxide removal agent are needed using molten with metal structure wet process under the present circumstances
The material that liquid does not react.In addition, deoxidier can be the combination of a variety of deoxidiers, i.e., deoxidier can in the embodiment of the present invention
To include a variety of deoxidiers, likewise, carbon dioxide removal agent can be the combination of a variety of carbon dioxide removal agent, i.e., the present invention is implemented
Carbon dioxide removal agent may include a variety of carbon dioxide removal agent in example, and this is not limited here.
In other embodiments of the invention, for the purposes of further decreasing O in the chamber2Or CO2Content, the present invention
Metal structure wet process processing method can also include: in the chamber to the base to be processed including metal structure in embodiment
Before the solution for spraying the metal structure wet process on plate, the solution of the metal structure wet process is stirred, described in accelerating
O in the solution of metal structure wet process2Migration.Solution by stirring metal structure wet process accelerates metal structure wet process
Solution present in O2Migration evolution, thus further decrease corrosion gap inside and outside O2Concentration difference, to weaken, " oxygen is dense
Difference battery " effect.
It being illustrated below with reference to specific experiment verification result, it is assumed that the solution of metal structure wet process is pure water, with
For CuMo metal structure, by the experimental analysis of inventor, before wet process, CuMo metal structure gap very little, interface
It can only be slightly separated, after wet process pure water impregnates 1h (hour), gap size becomes long 710nm in CuMo metal structure,
Height 118nm, gap increase obviously, and " oxygen concentration cell " effect is stronger, and galvanic corrosion is also relatively strong.And it uses and is adopted in the present embodiment
Use N2Exclude the O in air2And CO2And then after wet process pure water impregnates 1h, gap size becomes in CuMo metal structure
For long 186nm, height 38nm, gap greatly reduces, it was demonstrated that " oxygen concentration cell " effect and the more direct pure water of galvanic corrosion impregnate
It substantially reduces, realizes " oxygen concentration cell " effect decrease, the purpose that metal structure galvanic corrosion weakens.
Thin film transistor (TFT) (Thin-film transistor, TFT) is one of type of field effect transistor, rough system
It is that a variety of different films are deposited on substrate as mode, such as semiconductor active layer, dielectric layer and metal electrode layer.Film is brilliant
Body pipe has a very important role to the working performance of display device.
In order to more preferably implement metal structure wet process processing method in the embodiment of the present invention, in the processing of metal structure wet process
On method basis, a kind of TFT preparation method is also provided in the embodiment of the present invention, the TFT preparation method includes such as above-mentioned reality
Apply any metal structure wet process processing method in example.
By using metal structure wet process processing method described in embodiment as above, the TFT system is further improved
The performance of the TFT device of Preparation Method preparation.
In order to more preferably implement TFT preparation method in the embodiment of the present invention, on TFT preparation method basis, the present invention is real
It applies and a kind of TFT is also provided in example, the TFT is prepared using above-mentioned TFT preparation method.
By using TFT preparation method described in embodiment as above, TFT preparation method preparation is further improved
The performance of TFT device.
In order to more preferably implement TFT in the embodiment of the present invention, on the basis TFT, one kind is also provided in the embodiment of the present invention
Display device includes TFT described in above-described embodiment in the display device.
By using TFT described in embodiment as above, the display performance of the display device is further improved.
In the above-described embodiments, it all emphasizes particularly on different fields to the description of each embodiment, there is no the portion being described in detail in some embodiment
Point, it may refer to the detailed description above with respect to other embodiments, details are not described herein again.
When it is implemented, above each unit or structure can be used as independent entity to realize, can also carry out any
Combination, is realized as same or several entities, the method that the specific implementation of above each unit or structure can be found in front
Embodiment, details are not described herein.
The specific implementation of above each operation can be found in the embodiment of front, and details are not described herein.
It is provided for the embodiments of the invention a kind of metal structure wet process processing method, TFT preparation method, TFT above
And display device is described in detail, specific case used herein explains the principle of the present invention and embodiment
It states, the above description of the embodiment is only used to help understand the method for the present invention and its core ideas；Meanwhile for this field
Technical staff, according to the thought of the present invention, there will be changes in the specific implementation manner and application range, in conclusion
The contents of this specification are not to be construed as limiting the invention.
Claims (10)
1. a kind of metal structure wet process processing method, which is characterized in that the described method includes:
Gas in the chamber of wet process equipment or liquid are handled, to reduce O in the chamber2Or/and CO2Content；
The solution of the metal structure wet process is sprayed on the substrate to be processed including metal structure in the chamber.
2. metal structure wet process processing method according to claim 1, which is characterized in that described to wet process equipment
Gas or liquid are handled in chamber, to reduce O in the chamber2Or/and CO2Content, comprising:
The chamber of wet process equipment is vacuumized and sealed, the chamber air content is reduced, to reduce the chamber
Interior O2And CO2Content.
3. metal structure wet process processing method according to claim 1, which is characterized in that described to wet process equipment
Gas or liquid are handled in chamber, to reduce O in the chamber2Or/and CO2Content, comprising:
It is filled with the first inactive gas into the chamber, makes to form positive pressure in the chamber, to prevent spray metal structure wet
The O when solution of processing procedure, in air2And CO2It is dissolved in the solution of metal structure wet process in into the chamber.
4. metal structure wet process processing method according to claim 1, which is characterized in that the method also includes:
Before the solution for spraying the metal structure wet process on the substrate to be processed including metal structure in the chamber,
It is filled in the solution of the metal structure wet process in solution of second inactive gas to replace metal structure wet process
O2And CO2, reduce O2And CO2Meltage in the solution of the metal structure wet process.
5. metal structure wet process processing method according to claim 1, which is characterized in that the method also includes:
Before the solution for spraying the metal structure wet process on the substrate to be processed including metal structure in the chamber,
Gas remover is added, in the chamber to reduce O in the chamber2Or CO2Content.
6. metal structure wet process processing method according to claim 1, which is characterized in that the method also includes:
Before the solution for spraying the metal structure wet process on the substrate to be processed including metal structure in the chamber,
The solution of the metal structure wet process is stirred, O in the solution to accelerate the metal structure wet process2Migration.
7. metal structure wet process processing method according to claim 1, which is characterized in that the metal structure is inside
There are more metal-layer structures that potential difference easily causes corrosion for structure.
8. a kind of TFT preparation method, which is characterized in that the TFT preparation method includes as described in any in claim 1 to 7
Metal structure wet process processing method.
9. a kind of TFT, which is characterized in that the TFT is prepared using TFT preparation method as claimed in claim 8.
10. a kind of display device, which is characterized in that include TFT as claimed in claim 9 in the display device.
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| PCT/CN2019/093612 WO2020199395A1 (en) | 2019-04-02 | 2019-06-28 | Method for wet process treatment of metal structure, manufacturing method of tft, and tft |
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| CN111258192A (en) * | 2020-02-11 | 2020-06-09 | Tcl华星光电技术有限公司 | Photoresist stripping device and photoresist stripping method |
| CN111415865A (en) * | 2020-04-08 | 2020-07-14 | Tcl华星光电技术有限公司 | Substrate metal structure etching method, TFT preparation method, TFT and display device |
| US11189504B2 (en) | 2020-02-11 | 2021-11-30 | Tcl China Star Optoelectronics Technology Co., Ltd. | Photoresist stripping device and photoresist stripping method |
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