CN111415865A - Substrate metal structure etching method, TFT preparation method, TFT and display device - Google Patents
Substrate metal structure etching method, TFT preparation method, TFT and display device Download PDFInfo
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- CN111415865A CN111415865A CN202010269874.2A CN202010269874A CN111415865A CN 111415865 A CN111415865 A CN 111415865A CN 202010269874 A CN202010269874 A CN 202010269874A CN 111415865 A CN111415865 A CN 111415865A
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 213
- 239000002184 metal Substances 0.000 title claims abstract description 213
- 238000005530 etching Methods 0.000 title claims abstract description 153
- 239000000758 substrate Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 58
- 238000002360 preparation method Methods 0.000 title abstract description 15
- 239000011261 inert gas Substances 0.000 claims abstract description 43
- 239000007789 gas Substances 0.000 claims abstract description 30
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 239000010949 copper Substances 0.000 claims description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 9
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910018503 SF6 Inorganic materials 0.000 claims description 6
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000001307 helium Substances 0.000 claims description 6
- 229910052734 helium Inorganic materials 0.000 claims description 6
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 6
- 229910052743 krypton Inorganic materials 0.000 claims description 6
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910052754 neon Inorganic materials 0.000 claims description 6
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 6
- 229910052704 radon Inorganic materials 0.000 claims description 6
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims description 6
- 229910052724 xenon Inorganic materials 0.000 claims description 6
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 claims description 6
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 239000000460 chlorine Substances 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 abstract description 24
- 230000007797 corrosion Effects 0.000 abstract description 23
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 238000001039 wet etching Methods 0.000 description 12
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
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- 239000010409 thin film Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
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- 229910052731 fluorine Inorganic materials 0.000 description 2
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- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001182 Mo alloy Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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Abstract
The application relates to a substrate metal structure etching method, a TFT preparation method, a TFT and a display device. The method for etching the metal structure of the substrate comprises the following steps: respectively filling etching liquid and first inert gas into a chamber of first etching equipment, and corroding a first layer of exposed metal and a second layer of metal with a preset thickness on a substrate to be processed to obtain a first etched substrate; and placing the first etching substrate in a cavity of second etching equipment, and respectively filling etching gas and second inert gas into the cavity of the second etching equipment to corrode the exposed residual second layer of metal on the first etching substrate to obtain the etched substrate. The method can pour inert gas into the etching equipment, reduce the oxygen collection degree of the first layer of metal, and reduce the galvanic corrosion rate of the first layer of metal and the second layer of metal. The phenomenon that the first layer of metal is hollowed due to the fact that the second layer of metal is corroded at the interface between the first layer of metal and the second layer of metal is reduced.
Description
Technical Field
The application relates to the technical field of semiconductor materials, in particular to a substrate metal structure etching method, a TFT preparation method, a TFT and a display device.
Background
The TFT-L CD (thin film transistor liquid crystal display) is mainly applied to the industries of computers, video terminals, communication, instruments and meters and the like, and the main application fields include notebook computers, desktop computer monitors, workstations, industrial monitors, Global Positioning System (GPS), personal data processing, game machines, video telephones, portable VCDs, DVDs and other portable devices.
In order to overcome the problems of wiring and RC delay of the large-sized glass substrate, for example, copper (Cu) metal wire is used instead of the original aluminum (a L) metal wire, so that a lower resistivity can be obtained, and the copper (Cu) metal wire is widely used in the industry.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: because metal copper (Cu) is easy to diffuse and has poor adhesion and the like, a Barrier layer (Barrier layer) is generally used in the metal Cu manufacturing process to prevent the metal Cu from diffusing and increase the adhesion, such as: Cu/Mo (copper/molybdenum), and the like. In the wet etching process, because the activity of metal Mo of the metal Cu and the Barrier layer is different, galvanic corrosion reaction is easy to occur, so that the corrosion of the metal Mo serving as an anode is accelerated, and because the metal Mo at the Cu/Mo interface is corroded, the bottom metal Cu is contacted with an etching solution to cause a hollow phenomenon. Adversely affecting the performance and reliability of the TFT device.
Disclosure of Invention
Accordingly, it is desirable to provide a method for etching a metal structure of a substrate, a method for fabricating a TFT, a TFT and a display device, which are directed to the problem that a bottom metal layer contacting an etching solution is prone to be hollowed in a conventional metal structure process.
In order to achieve the above object, an embodiment of the present invention provides a method for etching a metal structure of a substrate, including:
respectively filling etching liquid and first inert gas into a chamber of first etching equipment, and corroding a first layer of exposed metal and a second layer of metal with a preset thickness on a substrate to be processed to obtain a first etched substrate; the first layer of metal is positioned on the second layer of metal;
and placing the first etching substrate in a cavity of second etching equipment, and respectively filling etching gas and second inert gas into the cavity of the second etching equipment to corrode the exposed residual second layer of metal on the first etching substrate to obtain the etched substrate.
In one embodiment, the first inert gas is argon, helium, neon, krypton, xenon, or radon;
the second inert gas is argon, helium, neon, krypton, xenon or radon.
In one embodiment, the first layer metal is a cathode metal; the second layer of metal is an anode metal.
In one embodiment, the first layer metal is copper; the second layer metal is molybdenum.
In one embodiment, the ratio of the thickness of the first layer metal to the second layer metal is 3000/500, 3000/1000, or 3000/1500.
In one embodiment, the etching solution is hydrogen peroxide; the etching gas is sulfur hexafluoride or chlorine.
In one embodiment, the first inert gas has a flow rate in the range of 10 to 200 liters per minute.
On the other hand, the embodiment of the invention also provides a TFT preparation method, and the TFT preparation method comprises any one of the substrate metal structure etching methods.
On the other hand, the embodiment of the invention also provides a TFT which is prepared by the TFT preparation method.
On the other hand, the embodiment of the invention also provides a display device, and the display device comprises the TFT.
One of the above technical solutions has the following advantages and beneficial effects:
in each embodiment of the above-mentioned substrate metal structure etching method, an etching solution and a first inert gas are respectively poured into a chamber of a first etching device to corrode a first layer of exposed metal and a second layer of metal with a preset thickness on a substrate to be processed, so as to obtain a first etched substrate; the first etching substrate is placed in a cavity of second etching equipment, etching gas and second inert gas are respectively filled into the cavity of the second etching equipment, the exposed residual second layer metal on the substrate to be processed is corroded, the etched substrate is obtained, the oxygen collection speed of the first layer metal is reduced, and the phenomenon that the first layer metal is hollowed due to corrosion of the second layer metal at the interface between the first layer metal and the second layer metal is reduced. According to the method, the inert gas can be respectively poured into the first etching device and the second etching device, the oxygen collection degree of the first layer of metal is reduced, and the galvanic corrosion rate of the first layer of metal and the second layer of metal is reduced. The phenomenon that the first layer of metal is hollowed due to the fact that the second layer of metal is corroded at the interface between the first layer of metal and the second layer of metal is reduced.
Drawings
FIG. 1 is a schematic diagram illustrating a first environmental application of a method for etching a metal structure of a substrate according to one embodiment;
FIG. 2 is a schematic diagram illustrating a second environmental application of the method for etching a metal structure of a substrate according to one embodiment;
FIG. 3 is a first flowchart of a method for etching a metal structure of a substrate according to one embodiment;
FIG. 4 is a second schematic flow chart diagram illustrating a method for etching a metal structure of a substrate according to one embodiment;
FIG. 5 is a schematic diagram of an etching process for a substrate to be processed according to an embodiment.
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
In the description of the present application, it should be noted that the terms "upper", "lower", "left", "right", "inner", "outer", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
In one embodiment, the substrate metal structure etching method provided herein, the first etching process of the substrate to be processed can be applied to the application environment as shown in fig. 1. The first etching device may include a machine Tank, and the machine Tank is provided with a gas input channel, a gas circulation channel, a liquid output channel and a liquid circulation channel. The Tank is also provided with an overflow outlet, a liquid sensor and a heater. The first etching apparatus further includes a pressure sensor provided in the gas circulation passage. Wherein, the pressure sensor can be used for measuring the pressure of the gas circulation channel, and then the flow of the inert gas can be obtained. The liquid level sensor can be used for measuring the height of the liquid level in the Tank of the machine table; the overflow outlet can be used for discharging the etching solution input into the machine Tank when the etching solution exceeds a threshold value; the heater can be used for heating the etching solution in the chamber of the machine Tank. The gas circulation channel can be used for circularly transmitting inert gas; the liquid output channel can be used for discharging the etching liquid. The inert gas is transmitted into a chamber of the machine Tank from a gas input channel; the etching solution is transmitted into the chamber of the machine Tank from the liquid circulation channel, and the substrate to be processed is placed in the chamber of the first etching device, so that the substrate to be processed can be subjected to first etching treatment.
In another embodiment of the substrate metal structure etching method provided in the present application, the first etching process of the substrate to be processed can be applied to the application environment as shown in fig. 2. Wherein, the first etching device can comprise a container (chamber or pipe) and a transmission pipeline communicated with the container. The inert gas can be transferred into the chamber of the container from the transfer pipeline; the etching solution is also transmitted into the chamber of the container from the transmission pipeline, the substrate to be processed is placed in the chamber of the container, and then the first etching treatment can be carried out on the substrate to be processed. In addition, the second etching apparatus may also include a chamber (chamber or pipe), and a transfer pipe communicating with the chamber. The inert gas can be transferred into the chamber of the container from the transfer pipeline; the etching gas is also transmitted into the chamber of the container from the transmission pipeline, the substrate to be processed after the first etching treatment is placed in the chamber of the container, and then the second etching treatment can be carried out on the substrate to be processed.
In one embodiment, as shown in fig. 3, a method for etching a metal structure of a substrate is provided, which is illustrated by way of example in fig. 1 or fig. 2, and includes the following steps:
step S310, respectively filling etching liquid and first inert gas into a chamber of first etching equipment, and corroding a first layer of exposed metal and a second layer of metal with preset thickness on a substrate to be processed to obtain a first etching substrate; wherein the first layer of metal is located on the second layer of metal.
Wherein the first etching device is a wet etching device; the chamber of the first etching apparatus may be used to accommodate a substrate to be processed and may also be used to store an etching solution. In one example, the chamber of the first etching apparatus may be a chamber of a machine Tank; the chamber of the first etching apparatus may also be a chamber of a chamber. The substrate to be processed is referred to as an initial metal substrate to be etched. In one example, the substrate to be processed may include a glass substrate, a second metal layer disposed on the glass substrate, and a first metal layer disposed on the second metal layer. I.e. the second layer of metal is located between the first layer of metal and the glass substrate. The substrate to be processed may further include a Photoresist (PR) of a preset shape; wherein the photoresist is disposed on the first layer of metal. Note that the photoresist has corrosion resistance.
Further, the etching liquid refers to a liquid capable of corroding a metal. The etching solution may be used to etch the exposed first layer metal and/or second layer metal. The first inert gas refers to a rare gas that is difficult to produce a chemical reaction. The first etched substrate refers to a substrate obtained after a first etching process.
Specifically, placing an initial unetched substrate to be processed in a chamber of first etching equipment, filling etching liquid into the chamber of the first etching equipment, and simultaneously filling a first inert gas into the chamber of the first etching equipment, so that a first exposed layer of metal and a second layer of metal with a preset thickness on the substrate to be processed can be corroded by the etching liquid, and a first etched substrate is obtained; the oxygen collection degree of the first layer of metal can be reduced through the first inert gas, the galvanic corrosion rate of the first layer of metal and the second layer of metal is reduced, and the phenomenon that the first layer of metal is hollowed due to corrosion of the second layer of metal at the interface between the first layer of metal and the second layer of metal is reduced.
Step S320, placing the first etched substrate in a chamber of a second etching apparatus, and filling an etching gas and a second inert gas into the chamber of the second etching apparatus, respectively, to corrode the exposed remaining second layer of metal on the first etched substrate, thereby obtaining an etched substrate.
Wherein the second etching apparatus is referred to as a dry etching apparatus. The chamber of the second etching apparatus may be used to accommodate a substrate to be processed and may also be used to store an etching gas. In one example, the chamber of the second etching apparatus may be a pipe chamber. Etching gas refers to a gas that can corrode metal. The etching gas may be used to etch the exposed first layer metal and/or second layer metal. The second inert gas refers to a rare gas that is difficult to produce chemical reactions. The etched substrate refers to a substrate with a metal structure obtained after the second etching treatment.
Specifically, a first layer of substrate to be processed after etching treatment is placed in a cavity of second etching equipment, etching gas is filled into the cavity of the second etching equipment, second inert gas is filled into the cavity of the second etching equipment, and then the exposed residual second layer of metal on the first etching substrate can be corroded by the etching gas, so that the etched substrate is obtained; the oxygen collection degree of the first layer of metal can be reduced through the second inert gas, the galvanic corrosion rate of the first layer of metal and the second layer of metal is reduced, and the phenomenon that the first layer of metal is hollowed due to corrosion of the second layer of metal at the interface between the first layer of metal and the second layer of metal is reduced.
In each embodiment of the above-mentioned substrate metal structure etching method, an etching solution and a first inert gas are respectively poured into a chamber of a first etching device to corrode a first layer of exposed metal and a second layer of metal with a preset thickness on a substrate to be processed, so as to obtain a first etched substrate; the first etching substrate is placed in a cavity of second etching equipment, etching gas and second inert gas are respectively filled into the cavity of the second etching equipment, the exposed residual second layer metal on the substrate to be processed is corroded, the etched substrate is obtained, the oxygen collection speed of the first layer metal is reduced, and the phenomenon that the first layer metal is hollowed due to corrosion of the second layer metal at the interface between the first layer metal and the second layer metal is reduced. Inert gases are respectively filled into the first etching equipment and the second etching equipment, so that the oxygen collection degree of the first layer of metal is reduced, and the galvanic corrosion rate of the first layer of metal and the second layer of metal is reduced. The phenomenon that the first layer of metal is hollowed due to the fact that the second layer of metal is corroded at the interface between the first layer of metal and the second layer of metal is reduced.
In a specific embodiment, the first inert gas is argon, helium, neon, krypton, xenon, or radon; the second inert gas is argon, helium, neon, krypton, xenon or radon.
In addition to the above, the inert gases (the first inert gas and the second inert gas) may be other gases that are introduced into the solution to block the cathode set O2 and do not react with the metal.
In a specific embodiment, the first layer metal is a cathode metal; the second layer of metal is an anode metal. The first layer metal and the second layer metal form a metal galvanic couple.
In a specific embodiment, the first layer metal is copper (Cu); the second layer metal is molybdenum (Mo).
It should be noted that the first layer metal is not limited to Cu, that is, the present application is not limited to the process of etching copper metal, and any process of exposing more than 2 metals with different metal potentials in the etching solution can be adopted, such as cleaning and strip (removing).
In one embodiment, the ratio of the thickness of the first layer metal to the second layer metal is 3000/500, 3000/1000, or 3000/1500.
For example, the first layer metal is copper, the second layer metal is molybdenum, the thickness of the metal layer copper is 3000A (angstroms), and the thickness of the metal layer molybdenum is 500A (angstroms), 1000A, or 1500A.
In one specific embodiment, the etching solution is hydrogen peroxide; the etching gas is sulfur hexafluoride or chlorine.
Specifically, the etching solution may be hydrogen peroxide (H) containing no fluorine (F)2O2) Alternatively, it may be hydrogen peroxide (H) containing fluorine (F)2O2). The etching gas may be oxygen (O) containing2) Sulfur hexafluoride (SF)6) Or oxygen (O) gas2) Chlorine (C L)2)。
In one embodiment, the first inert gas has a flow rate in a range of 10 to 200 liters per minute (L/min).
In one example, the first layer metal is copper, the second layer metal is molybdenum, the copper metal layer undergoes self-corrosion during wet etching on the one hand, and the copper metal layer/molybdenum metal layer (Cu/Mo) has a potential difference on the other hand, and galvanic corrosion occurs in an electrolyte. There are many factors that affect the rate of galvanic corrosion, such as: 1. material properties of the galvanic couple: metal potential difference, polarization effect of galvanic couple. 2. Geometrical characteristics of the galvanic couple: area ratio of cathode and anode, coupleThe pitch of the pairs, etc. 3. Environmental factors: temperature, O2Content, flow rate, and conductivity of the electrolyte. By reducing O in wet etching of metal layer copper2The content of the Cu/Mo alloy reduces the rate of Cu/Mo galvanic corrosion, thereby reducing the phenomenon of copper hollowing of the metal layer. During the wet etching process, inert gas (such as Ar) is introduced into the tool Tank and the tool Pipe to reduce the cathode O2The effect of the contact, in turn, reduces the rate of galvanic corrosion.
In the above embodiments, the oxygen collecting rate of the cathode metal Cu is reduced by passing an inert gas (e.g., Ar) to the etching apparatuses (the first etching apparatus and the second etching apparatus), so as to reduce the galvanic corrosion rate of the anode metal Mo, and reduce the phenomenon of hollowing out the metal Cu due to corrosion of the metal Mo at the Cu/Mo interface.
In one embodiment, as shown in FIG. 4, a method for etching a metal structure of a substrate is provided. The method comprises the following steps:
step S410, generating a double-layer metal film Cu/Mo (copper/molybdenum) on a glass substrate by adopting a Physical Vapor Deposition (PVD) mode, and developing by a yellow light process to obtain a PR (Photo Resist) pattern; wherein, the metal Cu is positioned on the metal Mo;
wherein the thickness of the metal Cu may be 3000A (angstroms) and the thickness of the metal Mo may be 500A, 1000A or 1500A.
Specifically, the area ratio of the cathode and the anode is reduced, the thickness of the metal Cu is unchanged, the thickness of the metal Mo is 500-1500A, and the smaller the ratio of the area of the cathode to the area of the anode is, the better the ratio is, and the specific value depends on the manufacturing process. The proportion of the cathode and the anode is reduced, namely the thickness of the anode metal Mo is increased, so that the galvanic corrosion speed is reduced, and the effect of protecting the Cu/Mo at the bottom layer is achieved.
Step S420, etching all the exposed metal Cu by a wet etching process and partially etching the metal Mo; wherein, the etching solution adopted in the wet etching process is H containing F2O2Or H without F2O2；
Wherein OE is 20-150%.
Step S430, forming a lower layer of Mo metal by dry etchingThe rest part is etched away; wherein the etching gas adopted in the wet etching process is SF6And O2
Wherein, SF6And O2The content ratio of (A) is 1000: 500.
it should be noted that the etching gas used in the wet etching process is C L2+O2Or CF4+O2。
In step S440, the remaining PR (photoresist) is stripped off by Strip.
Specifically, as shown in fig. 5, in a specific etching process of the substrate to be processed, the metal Cu is completely etched and a part of the metal MO is etched by wet etching; and finally, stripping the PR to obtain the etched metal structure. Namely, a metal structure pattern meeting the specification is obtained by adopting a PVD mode, a wet etching mode, a dry etching mode and a Strip mode.
In the above embodiment, the ratio of the metal areas of the cathode and the anode is reduced to reduce the rate of Cu/Mo galvanic corrosion, thereby achieving the effect of reducing the Cu void in the bottom metal. By increasing the thickness of the metal Mo (such as 500A, 1000A or 1500A). The required metal structure pattern is obtained by a wet etching mode, a dry etching mode and a Strip mode.
It should be noted that, in the metallic Cu process, the metallic Cu is prevented from diffusing and the adhesion of the metallic Cu thin film is improved. Barrier layer is indispensable. The Barrier layer made of metal Mo has the advantages of low cost, simple process and the like, and the thickness ratio of Cu/Mo can be 140/3300, 300/3000, 140/5000, 300/5000 and the like. The above collocation is due to metal Cu: the metal Mo has larger area, which causes large galvanic corrosion rate. By adopting the substrate metal structure etching method, the oxygen collection degree of the metal Cu is reduced by filling the inert gas, so that the galvanic corrosion rate of the metal Cu and the metal Mo is reduced. Reduce the phenomenon of metal Cu hollowing caused by corrosion of metal Mo at the interface between Mo and metal Mo.
It should be understood that, although the steps in the flowchart of fig. 3 are shown in order as indicated by the arrows, the steps are not necessarily performed in order as indicated by the arrows. The steps are not performed in the exact order shown and described, and may be performed in other orders, unless explicitly stated otherwise. Moreover, at least a portion of the steps in fig. 3 may include multiple sub-steps or multiple stages that are not necessarily performed at the same time, but may be performed at different times, and the order of performance of the sub-steps or stages is not necessarily sequential, but may be performed in turn or alternately with other steps or at least a portion of the sub-steps or stages of other steps.
In one embodiment, there is provided a substrate metal structure etching apparatus, including: a first etch module and a second etch module, wherein:
the first etching module is used for respectively filling etching liquid and first inert gas into a cavity of the first etching equipment, corroding a first layer of exposed metal and a second layer of metal with preset thickness on the substrate to be processed to obtain a first etched substrate; the first layer of metal is located on the second layer of metal.
And the second etching module is used for placing the first etching substrate in a cavity of second etching equipment, respectively filling etching gas and second inert gas into the cavity of the second etching equipment, and corroding the exposed residual second layer of metal on the first etching substrate to obtain the etched substrate.
For the specific definition of the substrate metal structure etching apparatus, reference may be made to the above definition of the substrate metal structure etching method, which is not described herein again. The modules in the substrate metal structure etching device can be wholly or partially realized by hardware and a combination thereof.
In order to better implement the substrate metal structure etching method in the embodiment of the present application, on the basis of the substrate metal structure etching method, the embodiment of the present application further provides a TFT manufacturing method, where the TFT manufacturing method includes any one of the above substrate metal structure etching methods.
By adopting the substrate metal structure etching method described in the above embodiments, the performance of the TFT device prepared by the TFT preparation method is further improved.
Thin-film transistors (TFTs) are one type of field effect transistors and are typically fabricated by depositing various Thin films, such as semiconductor active layers, dielectric layers, and metal electrode layers, on a substrate. The thin film transistor has a very important role in the operation performance of the display device.
Detailed description of the TFT manufacturing method the substrate metal structure etching method in the above embodiments can be operated, and is not repeated herein.
In order to better implement the TFT preparation method in the embodiment of the application, the embodiment of the application also provides a TFT on the basis of the TFT preparation method, and the TFT is prepared by adopting the TFT preparation method.
By adopting the TFT preparation method described in the above embodiment, the performance of the TFT device prepared by the TFT preparation method is further improved.
The TFT preparation method and the substrate metal structure etching method in the above embodiments can be operated for specific display of the TFT, and are not described herein again.
In order to better implement the TFT in the embodiments of the present application, a display device including the TFT described in the embodiments is further provided in the embodiments of the present application on the basis of the TFT.
By employing the TFT as described in the above embodiments, the display performance of the display device is further improved.
The TFT, the TFT preparation method, and the substrate metal structure etching method in the above embodiments can be operated for specific display of the display device, and are not described herein again.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A method for etching a metal structure of a substrate is characterized by comprising the following steps:
respectively filling etching liquid and first inert gas into a chamber of first etching equipment, and corroding a first layer of exposed metal and a second layer of metal with a preset thickness on a substrate to be processed to obtain a first etched substrate; the first layer of metal is located on the second layer of metal;
and placing the first etching substrate in a cavity of second etching equipment, and respectively filling etching gas and second inert gas into the cavity of the second etching equipment to corrode the exposed residual second layer of metal on the first etching substrate to obtain the etched substrate.
2. The method of claim 1, wherein the first inert gas is argon, helium, neon, krypton, xenon, or radon;
the second inert gas is argon, helium, neon, krypton, xenon or radon.
3. The method of claim 1, wherein the first layer of metal is a cathode metal; the second layer of metal is an anode metal.
4. The method of claim 3, wherein the first layer of metal is copper; the second layer metal is molybdenum.
5. The substrate metal structure etching method of claim 1, wherein a thickness ratio of the first layer metal to the second layer metal is 3000/500, 3000/1000, or 3000/1500.
6. The method of claim 1, wherein the etching solution is hydrogen peroxide;
the etching gas is sulfur hexafluoride or chlorine.
7. The method of any one of claims 1-6, wherein the first inert gas has a flow rate in a range of 10 to 200 liters per minute.
8. A TFT manufacturing method, comprising the substrate metal structure etching method according to any one of claims 1 to 7.
9. A TFT produced by the method of claim 8.
10. A display device comprising the TFT according to claim 9.
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