JP2008129233A - Manufacturing method of electrooptical device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrooptical device which suppresses an amount of a charge charged on a substrate in a wet process of a wafer-type substrate processing device. <P>SOLUTION: In the manufacturing method of the electrooptical device wherein the substrate for the electrooptical device is rotated around the vertical axis thereof and a plurality of treatment liquids are sequentially supplied to one surface of the substrate to treat the substrate and the treatment liquids scattered from the substrate are recovered from a plurality of treatment liquid guiding parts different for every kind of the treatment liquid by moving a plurality of treatment liquid recovering means so constituted that the plurality of annular treatment liquid guiding parts opened toward the substrate side are disposed in the vertical direction in multiple stages relatively in the vertical direction according to the kinds of the plurality of treatment liquids during treatment, the treatment liquid recovering means is moved only in a descending direction relatively to the substrate during treatment. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing an electro-optical device, and more particularly, to an electro-optical device that processes a substrate by rotating a substrate for the electro-optical device and sequentially supplying a plurality of processing liquids to one surface of the substrate. It relates to a manufacturing method.

  In the manufacturing process of electro-optical devices such as liquid crystal devices, plasma display devices, and organic electroluminescence devices, a substrate that is rotated and supplied with a chemical solution or pure water to perform cleaning or wet etching. A leaf type substrate processing apparatus is used, and such a substrate processing apparatus and a substrate processing method are disclosed in, for example, Patent Document 1 and Patent Document 2.

  As shown in FIG. 8, in a single-type substrate processing apparatus, a substrate 901 is supported by a chuck 903 on a substrate holding stage 902 that can rotate around a vertical axis, with a surface to be processed, which is one surface, being horizontal. The In the substrate processing apparatus, the processing liquid is supplied from the processing liquid supply nozzle 904 onto the processing surface of the substrate 901 rotated by the substrate holding stage 902 being rotated about the vertical axis, whereby the substrate 901 is covered. A wet process such as a cleaning process or a wet etching process is performed on the processing surface.

  Further, in the single-type substrate processing apparatus, a multi-stage cup 910 as a processing liquid recovery means as shown in FIG. 8 is used to separate and recover the pure water and plural types of chemical liquids used for each type. Is provided.

  The multi-stage cup 910 includes a plurality of substantially annular processing liquid guide portions 921, 922, and 923 that open inward, and the processing liquid guide portions 921, 922, and 923 are in the direction of the rotation axis of the substrate 901, that is, vertically up and down. It is configured to be stacked in multiple stages in the direction. The processing liquid guides 921, 922, and 923 communicate with different processing liquid recovery paths. The multi-stage cup 910 is supported so as to be movable in the vertical direction by a drive mechanism (not shown).

The multi-stage cup 910 configured as described above is received by the processing liquid guides 921, 922, and 923 in which the processing liquid scattered from the substrate 901 to the side differs depending on the type of processing liquid used. Thus, it is moved up and down by the drive mechanism. The processing liquids received by the processing liquid guides 921, 922, and 923 are guided to different processing liquid recovery paths, and are separated and recovered for each type. For this reason, in a substrate processing apparatus as shown in FIG. 8, it becomes possible to collect | recover the processing liquid which can be reused efficiently.
JP 2006-66579 A JP 2006-19523 A

  By the way, the multi-stage cup 910 shown in FIG. 8 is made of PTFE (polytetrafluoroethylene) or vinyl chloride, which has high chemical resistance, in order to ensure durability against the treatment liquid composed of the acid, alkali, organic solvent, etc. used. It is comprised by. Therefore, the multi-stage cup 910 is negatively charged due to friction between the surface and the processing liquid or atmosphere during the processing of the substrate 901. The substrate 901 that is rotationally driven in the region surrounded by the negatively charged multi-stage cup 910 is positively charged by electrostatic induction.

  In this way, when the processing liquid is supplied onto the substrate 901 in a charged state, the charge on the substrate 901 moves through the processing liquid at the moment when the processing liquid comes into contact with the substrate 901, and instantaneous discharge (spark) occurs. Occurs. When discharge occurs, so-called electrostatic breakdown such as occurrence of fusing or short-circuiting of wiring formed on the substrate 901 or occurrence of leakage or deterioration of an element such as a transistor or a capacitor occurs.

  The present invention has been made in view of the above problems, and is an electric device capable of suppressing the amount of charge to a substrate and preventing electrostatic breakdown of circuit elements on the substrate in a single-wafer type substrate processing apparatus. An object of the present invention is to provide a method for manufacturing an optical device.

  An electro-optical device manufacturing method according to the present invention processes a substrate for an electro-optical device by rotating the substrate about a vertical axis and sequentially supplying a plurality of processing liquids to one surface of the substrate. During the processing, a plurality of annular processing liquid guides opened on the substrate side are arranged in multiple stages in the vertical direction, and the processing liquid recovery means is arranged in the vertical direction according to the types of the plurality of processing liquids. A method of manufacturing an electro-optical device that recovers the processing liquid splashed from the substrate by moving relative to each other from the plurality of processing liquid guides, which are different for each type. The collecting means is moved only in the direction of lowering relative to the substrate.

  According to such a configuration of the present invention, the amount of charge to the substrate caused by electrostatic induction by the charged processing liquid recovery means is changed between the types of the processing liquid during the processing and the types of the processing liquid are switched. Accordingly, the processing liquid recovery means decreases as it relatively descends. Accordingly, it is possible to minimize the integral value of the charge amount charged on the substrate in the period from the start to the end of the processing on the substrate. For this reason, it is possible to suppress the amount of movement of electric charge when supplying the chemical solution, and to prevent electrostatic breakdown of the circuit on the substrate.

  In the present invention, the processing performed on the substrate by the processing liquid discarded after the processing among the plurality of processing liquids is a state in which the substrate is positioned above the upper end portion of the processing liquid recovery unit. It is preferable to be performed in

  According to such a configuration, the processing time in the state surrounded by the processing recovery means in which the substrate is easily charged by electrostatic induction is limited to the processing time when the processing liquid that needs to be recovered is used. Can be as long as necessary. For this reason, it is possible to further suppress the amount of charge to the substrate, and to effectively prevent electrostatic breakdown of the circuit on the substrate.

  In the present invention, it is preferable that the processing liquid recovery means is composed of PTFE.

  According to such a configuration, since it is possible to use a processing liquid recovery means having high durability against the processing liquid to be used, the maintenance cycle of the apparatus can be taken longer, and the substrate for the electro-optical device can be more Production efficiency can be improved.

The present invention also provides:
The relative movement between the processing liquid recovery means and the substrate is preferably controlled by a control device.

  According to the present invention, the electro-optical device includes at least one of a switching element and a capacitive element, and the manufacturing method of the electro-optical device includes at least one of the switching element and the capacitive element. It is preferable to be carried out in the step of forming on the substrate.

  According to such a configuration, it becomes possible to form the switching element and the capacitive element that are liable to cause electrostatic breakdown during the forming process without causing electrostatic breakdown, and to improve the manufacturing yield of the electro-optical device. It becomes possible.

  Embodiments of the present invention will be described below with reference to the drawings. In each drawing used for the following description, the scale is different for each member in order to make each member a size that can be recognized on the drawing. FIG. 1 is a cross-sectional view showing a schematic configuration of a wet processing apparatus 201 of the present embodiment. FIG. 2 is an explanatory view showing a state of positioning between the substrate and the multi-stage cup. FIG. 3 is a flowchart of the wet process according to the present embodiment.

  The present embodiment described below relates to wet processing in a single wafer type wet processing apparatus 201 as an example of a processing apparatus for a substrate 210 for an electro-optical device such as a liquid crystal device, a plasma display device, or an organic electroluminescence device. Is applied.

  The wet processing apparatus 201 includes a substrate holding stage 211 that supports a processing target surface 210a, which is one surface, in a processing chamber 202 so that the processing surface 210a is substantially horizontally upward and rotates about a vertical axis, and a substrate holding stage 211 on the substrate holding stage 211. A nozzle 220 for supplying pure water or a plurality of types of chemicals is disposed on the surface 210a of the substrate 210 that is supported. Here, the chemical liquid refers to a cleaning liquid or an etching liquid (etchant) in the present embodiment. For example, hydrofluoric acid, dilute hydrofluoric acid, or a mixed acid (fluoric nitric acid) that is a mixed liquid of hydrofluoric acid and nitric acid. And chemicals such as potassium hydroxide.

  Although not shown, the wet processing apparatus 201 is provided with a substrate transfer apparatus that loads and unloads the substrate 210 into and out of the processing chamber 202, a gas supply apparatus that supplies nitrogen gas and the like into the processing chamber 202, and the like. . In addition, an opening is provided in the bottom surface of the processing chamber 202, and the opening communicates with the processing liquid recovery path 258.

  In the following description, pure water and a plurality of types of chemical liquids are collectively supplied to the substrate for the electro-optical device, except when specifically distinguishing between pure water and a plurality of types of chemical liquids. Thus, it is simply referred to as a processing liquid.

  A plurality of chuck pins 212 for sandwiching the substrate 210 are provided on the upper surface of the disk-shaped substrate holding stage 211, and a rotating shaft 213 protrudes from the lower surface of the substrate holding stage 211. . The substrate holding stage 211 is rotatably supported around the vertical axis by the rotation shaft 213 being fitted into a base 214 provided in the processing chamber 202 and supported via a bearing.

  A motor 218 serving as a substrate rotation driving means is provided below the base 214, and the rotational driving force of the motor 218 is driven by a drive pulley 216, a belt 217, and a motor 218. This is transmitted to the rotary shaft 213 via a driven pulley 215 fitted to the lower end of the rotary shaft 213. That is, in the wet processing apparatus 201, the substrate holding stage 211 is rotationally driven by the operation of the motor 218.

  Although not shown in detail, the nozzle 220 communicates with a processing liquid supply means 221 including a tank for storing the processing liquid, a pump and a valve for sending the processing liquid from the tank, and the like. Accordingly, pure water and a plurality of types of chemical solutions are individually supplied onto the surface to be processed 210a of the substrate 210.

  Note that the wet processing apparatus 201 of the present embodiment is configured to supply the processing liquid only to the processing target surface 210 a of the substrate 210, but the wet processing apparatus 201 also supplies the processing liquid and gas to the lower surface side of the substrate 210. You may have the structure which supplies at least one.

  The wet processing apparatus 201 is provided with a multi-stage cup 250 as a processing liquid recovery means so as to surround the side surfaces of the substrate holding stage 211 and the base 214. The multi-stage cup 250 has a substantially cylindrical shape with the vertical axis as the central axis so as to cover the side surfaces of the substrate holding stage 211 and the base 214. On the inner peripheral surface portion of the cylindrical multi-stage cup 250, a plurality of substantially annular processing liquid guide portions 251, 252, and 253 opened inward are formed so as to be stacked vertically.

  The plurality of treatment liquid guide portions 251, 252 and 253 are independent hollow portions separated by partition walls, and the plurality of treatment liquid guide portions 251, 252, and 253 are respectively provided as individual treatment liquid recovery paths 255, 256 and 257.

  In other words, the processing liquid guide portions 251, 252 and 253 have an annular opening facing the rotation axis of the substrate holding stage 211, and the respective annular openings of the processing liquid guide portions 251, 252, and 253 are formed on the substrate. The holding stages 211 are arranged in a direction parallel to the rotation axis. In addition, the respective annular openings of the processing liquid guides 251, 252 and 253 are communicated with the processing liquid recovery paths 255, 256 and 257, respectively.

  The multi-stage cup 250 is made of a material having durability against the processing liquid. In the present embodiment, the multi-stage cup 250 is made of PTFE (polytetrafluoroethylene) or vinyl chloride. The multi-stage cup 250 need not be entirely made of PTFE or vinyl chloride, and may have a structure in which the surface that is likely to come into contact with the treatment liquid is covered with PTFE or vinyl chloride.

  The multi-stage cup 250 having the above-described configuration is fixed to a vertical movement stage 266 of a single-axis robot 265 that is a linear motion lifting means provided in the processing chamber 202 and movable in the vertical vertical direction. Therefore, the multi-stage cup 250 is supported in the processing chamber 202 so as to be movable up and down substantially parallel to the vertical axis by driving the vertical movement stage 266 of the single-axis robot 265.

  The substrate transfer device, the motor 218, the processing liquid supply unit 221 and the single-axis robot 266 described above are electrically connected to the control unit 219. The control unit 219 includes an arithmetic device, an input / output device, a storage device, and the like, and is a device that controls operations of the substrate transfer device, the motor 218, the processing liquid supply unit 221 and the single-axis robot 266. That is, the operation of the wet processing apparatus 201 is controlled by the control means 219.

  In the wet processing apparatus 201 configured as described above, the processing liquid that is scattered to the side of the substrate 210 by rotating the substrate 210 is received by any one of the plurality of processing liquid guides 251, 252, and 253. As described above, the processing liquid is guided to one of the processing liquid recovery paths 255, 256, and 257 by positioning the multistage cup 250 in the vertical direction.

  More specifically, as shown in FIGS. 2A, 2 </ b> B, 2 </ b> C, and 2 </ b> D, the multistage cup 250 is positioned at any one of four positions by the single-axis robot 266. . FIG. 2A shows a state in which the multistage cup 250 is lowered most with respect to the substrate 210, and FIG. 2B shows the multistage cup so that the processing liquid is received by the uppermost processing liquid guide 253. FIG. 2C shows a state in which the cup 250 is moved up by one step and is positioned, and FIG. 2C shows that the multi-stage cup 250 is further moved up and positioned so that the processing liquid is received by the processing liquid guide portion 252 located in the center. FIG. 2D shows a state in which the multi-stage cup 250 is most elevated and positioned so that the processing liquid is received by the processing liquid guide portion 251 located at the lowermost position.

  The processing liquid recovery paths 255, 256, 257, and 258 communicate with the individual recovery liquid storage tanks 271, 272, 273, and 274, respectively, and are guided from the processing liquid recovery paths 255, 256, 257, and 258, respectively. The processing liquid is stored in the respective recovery liquid storage tanks 271, 272, 273, and 274.

  A method for manufacturing the electro-optical device according to this embodiment, which is performed using the wet processing apparatus 201 that is the substrate processing apparatus having the above-described configuration, will be described below. In the method of manufacturing the electro-optical device according to this embodiment, for example, a wet process is performed by supplying a chemical solution such as hydrofluoric acid onto a substrate 210 made of glass, quartz, or the like used in a liquid crystal device.

  Note that the wet treatment process described below with reference to the flowchart shown in FIG. 3 is automatically controlled by the control means 219 of the wet treatment apparatus 201 and executed.

  First, in the stage before the wet treatment process is performed, the multi-stage cup 250 is positioned at the lowest position, that is, at the position shown in FIG. Next, the substrate 210 is carried into the processing chamber 202 by a substrate transfer device (not shown), and the substrate 210 is sandwiched by the chuck pins 212 on the substrate holding stage 211 so that the processing surface 210a becomes substantially horizontal. Supported (step S01).

  Next, the multi-stage cup 250 is raised by two stages and positioned at the position shown in FIG. That is, the multi-stage cup 250 is moved upward to a position where the processing liquid splashing from the substrate 210 to the side is received by the processing liquid guide unit 252 (step S02).

  Next, when the motor 218 is operated, the substrate holding stage 211 is rotated, and the substrate 210 is rotationally driven around the vertical axis. Then, the reused chemical solution, which is the first processing liquid, is supplied from the nozzle 220 to the vicinity of the rotation center of the processing target surface 210a of the substrate 210 that is rotationally driven, and wet processing is performed (step S03). Here, the chemical solution to be reused refers to a chemical solution that has been used once and collected before the current wet treatment.

  Further, the reused chemical solution supplied onto the processing target surface 210 a in step S <b> 03 scatters to the side of the substrate 210, is received by the processing liquid guide unit 252, and is stored in the recovered liquid storage tank 272. The chemical liquid stored in the recovered liquid storage tank 272 is processed as waste liquid.

  Next, the multi-stage cup 250 is lowered by one stage and positioned at the position shown in FIG. That is, the multi-stage cup 250 is moved downward to a position where the processing liquid splashing from the substrate 210 to the side is received by the processing liquid guide portion 253 (step S04).

  Next, a new chemical liquid as the second processing liquid is supplied from the nozzle 220 to the vicinity of the rotation center of the processing target surface 210a of the substrate 210 being rotated, and wet processing is performed (step S05). Here, the new chemical solution refers to a chemical solution that has never been used before the current wet treatment. By supplying a new chemical solution onto the processing surface 210a of the substrate 210 for a predetermined time, the wet processing is completed.

  Here, the new chemical liquid supplied onto the surface 210a to be processed in step S05 scatters to the side of the substrate 210, is received by the processing liquid guide 253, and is stored in the recovered liquid storage tank 273. The chemical solution stored in the collected liquid storage tank 273 is used as a reused chemical solution, for example, in wet processing at the time of manufacturing the next lot.

  Next, the multi-stage cup 250 is positioned in the most lowered state, that is, the position shown in FIG. 2A (step S06).

  Next, pure water as the third processing liquid is supplied from the nozzle 220 to the vicinity of the rotation center of the surface 210a to be processed of the substrate 210 that is rotationally driven, so that the chemical liquid remaining on the substrate 210 is purified. A rinsing process for replacing with water is performed. Subsequently, the supply of pure water is stopped, and a drying process is performed in which pure water on the substrate 210 is scattered by the rotation of the substrate 210 (step S07).

  Here, the pure water supplied onto the surface 210a to be processed in step S07 scatters to the side of the substrate 210, falls along the upper surface of the multi-stage cup 250, and falls to the bottom surface of the processing chamber 202, thereby processing liquid recovery path 258. Is stored in the recovered liquid storage tank 274. The pure water stored in the collected liquid storage tank 274 is treated as waste water.

  Next, after the rotation of the substrate 210 is stopped, the chucking of the substrate 210 by the chuck pins 212 is released, and the substrate 210 is unloaded from the processing chamber 202 by a substrate transfer device (not shown) (step S08).

  Thus, the wet process for the surface 210a to be processed of the substrate 210 according to this embodiment is completed.

  In the wet process, which is the method for manufacturing the electro-optical device of the present embodiment described above, the multi-stage cup 250 only moves downward relative to the substrate 210 after step S03, which is the process using the first processing liquid, is completed. And the multi-stage cup 250 does not rise. Further, in the state where the processing with the processing liquid has been completed (at the time of completion of step 07), the multi-stage cup 250 has its upper end positioned below the substrate 210.

  That is, the wet process is performed in a state where the multi-stage cup 250 moves only in a downward direction relative to the substrate 210. At the end of the wet process, the substrate 210 is moved from the upper end of the multi-stage cup 250. Is also located above.

  Here, in the conventional wet processing, by moving the multi-stage cup in the vertical direction according to the type of processing liquid to be used, each type of processing liquid through a different processing liquid guide unit for each type of processing liquid The processing liquid was recovered to a different recovery liquid storage tank.

  As described above, when a multi-stage cup made of PTFE or vinyl chloride that is easily charged is processed while being moved in the vertical direction with respect to the substrate, there is a distance that the upper end of the charged multi-stage cup protrudes above the substrate. It has been confirmed by the applicant's experiments that the larger the value, the more the amount of charge on the substrate due to electrostatic induction increases. That is, as shown in FIGS. 2C and 2D, when the processing with the processing liquid is performed in a state where the upper end portion of the multi-stage cup 250 protrudes relatively large above the substrate 210, the substrate 210 is processed. As a result, the electrostatic charge of the circuit formed on the substrate 210 is likely to occur.

  However, in the present embodiment, the state in which the upper end portion of the multi-stage cup 250 is farthest upward from the substrate 210 is only when the processing with the first treatment liquid is performed, and thereafter, the upper end portion of the multi-stage cup 250 is the substrate. The distance protruding upward from 210 is decreasing.

  For this reason, the amount of charge to the substrate 210 caused by electrostatic induction by the charged multi-stage cup 250 is such that the type of the processing liquid is switched during the processing, and the multi-stage cup 250 is lowered in accordance with the switching of the type of the processing liquid. It decreases as you move to.

  Therefore, according to the method of manufacturing the electro-optical device of the present embodiment, it is possible to minimize the integrated value of the amount of charge charged on the substrate 250 in the period from the start to the end of the processing on the substrate 250. For this reason, according to the method of manufacturing the electro-optical device of the present embodiment, it is possible to suppress the amount of movement of electric charge when supplying the chemical solution, and it is possible to prevent electrostatic breakdown of the circuit on the substrate. is there.

  In the present embodiment, the multi-stage cup 250 is moved according to the type of the processing liquid, so that the processing liquid is separated for each type and collected in different recovery liquid storage tanks 272, 273, and 274. In the same manner as the above, it is easy to reuse and discard the treated liquid after collection, and the efficiency of manufacturing the electro-optical device is not reduced.

  Further, according to the present embodiment, the pure water rinsing process and the drying process are performed in a state where the substrate 250 is located above the upper end portion of the multi-stage cup 250. That is, in the case of using the processing liquid to be discarded after processing, that is, pure water in this embodiment, the processing on the substrate 210 is performed in a state where the substrate 210 is positioned above the upper end portion of the multistage cup 250.

  As described above, by performing the pure water rinsing process and the drying process in a state where the substrate 250 is located above the upper end portion of the multi-stage cup 250, the substrate 250 is surrounded by the multi-stage cup 250 that is easily charged. The processing time can be limited to the minimum necessary time only when the processing liquid that needs to be recovered is used. For this reason, according to the present embodiment, the amount of charge on the substrate 250 can be further suppressed as compared with the conventional case, and electrostatic breakdown of the circuit elements on the substrate 250 can be effectively prevented. It becomes.

  Further, since the substrate 250 is positioned above the upper end of the multi-stage cup 250 when the processing with the processing liquid is completed, it is not necessary to move the multi-stage cup 250 when the substrate 250 is unloaded. That is, when the substrate is carried out, there is no need to move the charged multi-stage cup 250 relative to the substrate 210, so that the amount of charge on the substrate 210 can be further suppressed.

  In the description of the wet processing described above, the processing liquid type switching and the lowering operation of the multi-stage cup 250 are described as being performed sequentially, but the present invention is not limited to this embodiment. Absent.

  For example, the switching between the reused chemical solution and the new chemical solution in step S03 and step S05 may be performed such that the processing liquid supplied from the nozzle 220 continuously changes without interruption. In this case, the lowering operation of the multi-stage cup 250 in step S04 is preferably performed after a predetermined time has elapsed after the processing liquid supplied from the nozzle 220 has been completely switched to a new chemical liquid. Thus, by delaying the lowering operation of the multi-stage cup 250 with respect to the completion of the switching of the processing liquid, the reused chemical liquid is mixed into the recovered liquid storage tank 273 for recovering a new chemical liquid. Can be prevented.

  The electro-optical device manufacturing method according to the present invention may be any condition as long as the multi-stage cup 250 does not move upward with respect to the substrate 210 during the processing with the processing liquid. The state fixed to the position shown in FIG.2 (b) may be sufficient. In this case, a branch is provided in the treatment liquid collection path 257 communicated with the treatment liquid guide unit 253, and the treatment liquid is separated and collected for each type by changing the branch destination of the treatment liquid collection path 257 using a switching valve or the like. The structure which performs is considered. With such a configuration, the amount by which the upper end of the multistage cup 250 protrudes upward from the substrate 210 is fixed in the shallowest state, so that the amount of charge on the substrate 210 can be further suppressed.

  Note that the method of manufacturing the electro-optical device according to the present invention is not limited to the above-described wet processing, and is generally applied to a spin-type single-wafer substrate processing apparatus that performs processing with a chemical solution on a substrate for an electro-optical device. Needless to say, it is applicable. For example, the present invention can be applied to a process using an organic acid as a residue removal process after dry etching, and can also be applied to a substrate cleaning process or a spin coat process.

  In the present embodiment, the multistage cup 250 is moved up and down and the height of the substrate 210 is fixed. However, the position where the multistage cup 250 is fixed and the substrate 210 is rotationally driven is reversed. May move up and down. That is, the vertical positional relationship between the multistage cup 250 and the substrate 210 in the present invention is relative.

Next, an embodiment of the electro-optical device manufactured by the electro-optical device manufacturing method described above will be described.
First, the overall configuration of the embodiment according to the electro-optical device of this embodiment will be described with reference to FIGS. 4 and 5. Here, FIG. 4 is a plan view of the electro-optical device when the TFT array substrate is viewed from the side of the counter substrate together with each component formed thereon, and FIG. 5 is a cross-sectional view taken along line HH ′ of FIG. It is. Here, a TFT active matrix driving type liquid crystal device with a built-in driving circuit, which is an example of an electro-optical device, is taken as an example.

  4 and 5, in the electro-optical device according to this embodiment, the TFT array substrate 10 and the counter substrate 20 are disposed to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are provided with a sealing material 52 provided in a seal region positioned around the image display region 10a. Are bonded to each other.

  The sealing material 52 is made of, for example, an ultraviolet curable resin, a thermosetting resin, or the like for bonding the two substrates, and is applied on the TFT array substrate 10 in the manufacturing process and then cured by ultraviolet irradiation, heating, or the like. It is. In addition, in the sealing material 52, gap materials such as glass fibers or glass beads are provided so as to make the interval between the TFT array substrate 10 and the counter substrate 20 (a gap between the substrates) a predetermined value. Note that such a gap material may be included in the liquid crystal layer 50 as long as the liquid crystal device is a large-sized liquid crystal device that performs the same magnification display as a liquid crystal display or a liquid crystal television.

  A light-shielding frame light-shielding film 53 that defines the frame area of the image display region 10a is provided on the counter substrate 20 side in parallel with the inside of the seal region where the seal material 52 is disposed. A part or all of the frame light shielding film 53 may be provided as a built-in light shielding film on the TFT array substrate 10 side.

  A data line driving circuit 101 and an external circuit connection terminal 102 are provided along one side of the TFT array substrate 10 in a region located outside the sealing region where the sealing material 52 is disposed. The scanning line driving circuit 104 is provided along two sides adjacent to the one side so as to be covered with the frame light shielding film 53. Further, in order to connect the two scanning line driving circuits 104 provided on both sides of the image display area 10a in this way, the TFT array substrate 10 is covered with the frame light shielding film 53 along the remaining side. A plurality of wirings 105 are provided.

  In addition, vertical conduction members 106 functioning as vertical conduction terminals between the two substrates are disposed at the four corners on the counter substrate 20. On the other hand, vertical conduction terminals are provided on the TFT array substrate 10 in regions facing these corner portions. Electrical conduction between the TFT array substrate 10 and the counter substrate 20 is made by the vertical conductive member 106 and the vertical conductive terminal.

  In FIG. 5, an alignment film 16 is formed on the TFT array substrate 10 on the pixel electrode 9a after the formation of pixel switching TFTs, scanning lines, data lines, and the like. On the other hand, on the counter substrate 20, in addition to the counter electrode 21, a lattice-shaped or striped light-shielding film 23 is provided, and an alignment film 22 is formed on the uppermost layer portion. Further, the liquid crystal layer 50 is made of, for example, a liquid crystal in which one or several types of nematic liquid crystals are mixed, and takes a predetermined alignment state between the pair of alignment films.

  In addition to the data line driving circuit 101, the scanning line driving circuit 104, and the like, the image signal on the image signal line is sampled and supplied to the data line on the TFT array substrate 10 shown in FIGS. Sampling circuit, precharge circuit for supplying a precharge signal of a predetermined voltage level to a plurality of data lines in advance of an image signal, for inspecting the quality, defects, etc. of the electro-optical device during production or at the time of shipment An inspection circuit or the like may be formed.

  The configuration of the pixel portion of the electro-optical device according to the present embodiment of the invention will be described with reference to FIG. FIG. 6 is an equivalent circuit of various elements, wirings, and the like in a plurality of pixels formed in a matrix that forms the image display region of the electro-optical device. FIG. 7 is a schematic cross-sectional view for explaining a stacked structure in the pixel portion.

  In FIG. 6, a plurality of pixels formed in a matrix that forms an image display area of the electro-optical device according to the present embodiment are a pixel element 9 a and a switching element for switching control of the pixel electrode 9 a. A TFT 30 is formed, and a data line 6 a to which an image signal is supplied is electrically connected to the source of the TFT 30. The image signals S1, S2,..., Sn written to the data lines 6a may be supplied line-sequentially in this order, or may be supplied for each group to a plurality of adjacent data lines 6a. Good.

  Further, the gate electrode 3a is electrically connected to the gate of the TFT 30, and the scanning signals G1, G2,..., Gm are pulse-sequentially applied in this order to the scanning line 11a and the gate electrode 3a at a predetermined timing. It is comprised so that it may apply. The pixel electrode 9a is electrically connected to the drain of the TFT 30, and the image signal S1, S2,..., Sn supplied from the data line 6a is obtained by closing the TFT 30 as a switching element for a certain period. Data is written in the pixels of the scanning line 11a selected at a predetermined timing.

  Image signals S1, S2,..., Sn written to the pixels are held for a certain period between the pixel electrode 9a and the counter electrode formed on the counter substrate. The liquid crystal modulates light and enables gradation display by changing the orientation and order of the molecular assembly depending on the applied voltage level. In the normally white mode, the transmittance for incident light is reduced according to the voltage applied in units of each pixel, and in the normally black mode, the light is incident according to the voltage applied in units of each pixel. The light transmittance is increased, and light having a contrast corresponding to the image signal is emitted from the electro-optical device as a whole.

  In order to prevent the image signal held here from leaking, a capacitor element 70 is added in parallel with the liquid crystal capacitor formed between the pixel electrode 9a and the counter electrode. The capacitive element 70 is provided side by side with the scanning line 11a, and the fixed potential side capacitive electrode is electrically connected to the capacitive wiring 400 fixed at a constant potential.

  Hereinafter, a specific configuration of the electro-optical device, which includes the data line 6a, the scanning line 11a, the gate electrode 3a, the TFT 30, and the like and realizes the circuit operation as described above, will be described with reference to FIG.

  First, a plurality of pixel electrodes 9a are provided in a matrix on the TFT array substrate 10, and data lines 6a and scanning lines 3a are provided along the vertical and horizontal boundaries of the pixel electrodes 9a. As will be described later, the data line 6a has a laminated structure including an aluminum film, and the scanning line 11a is made of, for example, a conductive polysilicon film. A TFT 30 having a semiconductor layer 1a and a gate electrode 3a is provided in a layer between the scanning line 11a and the data line 6a at a location where the scanning line 11a and the data line 6a intersect in plan view. It has been. The scanning line 11a is electrically connected to the gate electrode 3a via the contact hole 12cv.

  As shown in FIG. 7, the pixel electrode 9a is provided on the TFT array substrate 10 side, and an alignment film 16 subjected to a predetermined alignment process such as a rubbing process is provided on the upper side thereof. ing. The pixel electrode 9a is made of a transparent conductive film such as an ITO film. On the other hand, a counter electrode 21 is provided on the entire surface of the counter substrate 20, and an alignment film 22 subjected to a predetermined alignment process such as a rubbing process is provided on the upper layer side. . The counter electrode 21 is made of a transparent conductive film such as an ITO film, for example, like the pixel electrode 9a described above.

  Between the TFT array substrate 10 and the counter substrate 20 arranged so as to face each other, an electro-optical material such as liquid crystal is sealed in a space surrounded by the above-described sealing material 52 (see FIGS. 4 and 5). 50 is formed. The liquid crystal layer 50 takes a predetermined alignment state by the alignment films 16 and 22 in a state where no voltage is applied.

  On the other hand, on the TFT array substrate 10, in addition to the pixel electrode 9a and the alignment film 16, various configurations including these are provided in a laminated structure. As shown in FIG. 7, this stacked structure includes a first layer including a scanning line 11a, a second layer including a TFT 30 including a gate electrode 3a, a third layer including a capacitor element 70, and a data line 6a in order from the bottom. And the like, a fifth layer including the capacitor wiring 400 and the like, and a sixth layer (uppermost layer) including the pixel electrode 9a and the alignment film 16 and the like. Further, the base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the second interlayer insulating film 42 is provided between the third layer and the fourth layer. A third interlayer insulating film 43 is provided between the fourth layer and the fifth layer, and a fourth interlayer insulating film 44 is provided between the fifth layer and the sixth layer, so that the above-described elements are short-circuited. Is preventing. Further, these various insulating films 12, 41, 42, 43 and 44 are also provided with, for example, a contact hole for electrically connecting the high concentration source region 1d in the semiconductor layer 1a of the TFT 30 and the data line 6a. It has been. Hereinafter, each of these elements will be described in order from the lower layer side.

  First, the first layer includes, for example, a simple metal, an alloy, a metal silicide, a polysilicide, or a stack of these, including at least one of high melting point metals such as Ti, Cr, W, Ta, and Mo. Alternatively, a scanning line 11a made of conductive polysilicon or the like is provided.

  Next, the TFT 30 including the gate electrode 3a is provided as the second layer. The TFT 30 has an LDD (Lightly Doped Drain) structure, and includes the gate electrode 3a described above, for example, a semiconductor layer 1a made of a polysilicon film and having a channel formed by an electric field from the gate electrode 3a. Channel region 1a ', insulating film 2 including a gate insulating film that insulates gate electrode 3a from semiconductor layer 1a, low concentration source region 1b and low concentration drain region 1c, and high concentration source region 1d and high concentration drain in semiconductor layer 1a A region 1e is provided.

  In the present embodiment, a relay electrode 719 is formed on the second layer as the same film as the gate electrode 3a described above. The relay electrode 719 and the gate electrode 3a are formed as the same film. When the latter is made of a conductive polysilicon film or the like, the former is also made of a conductive polysilicon film or the like.

  A base insulating film 12 made of, for example, a silicon oxide film is provided on the scanning line 11 a and below the TFT 30.

  A capacitive element 70 is provided in the third layer above the second layer. The capacitive element 70 includes a lower electrode 71 as a pixel potential side capacitive electrode electrically connected to the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a, and a capacitive electrode 300 as an upper electrode as a fixed potential side capacitive electrode. Are formed so as to face each other through the dielectric layer 75.

  More specifically, the lower electrode 71 is composed of a single layer film or a multilayer film made of, for example, a metal, an alloy, conductive polysilicon, or conductive metal silicide (for example, WSi). Here, as one specific example, the lower electrode 71 is made of polysilicon into which phosphorus (P) is ion-implanted and has a film thickness of about 150 nm. The lower electrode 71 has a function as a pixel potential side capacitance electrode, and also has a function of relay-connecting the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30, and is electrically connected to the pixel electrode 9a via the relay electrode 719. Connected.

  The dielectric layer 75 is a silicon oxide film such as a high temperature oxide film (HTO (High Temperature Oxide) film), a high density plasma oxide film (HDP (High Density Plasma) film) having a film thickness of about 5 to 30 nm, or It is made of an insulating material such as a silicon nitride film. Here, as a specific example, the dielectric layer 75 has a two-layer structure in which a silicon oxide film is stacked in a lower layer and a silicon nitride film is stacked in an upper layer. The dielectric layer 75 includes at least one metal oxide film such as a three-layer structure such as a silicon oxide film, a silicon nitride film, and a silicon oxide film, or a laminated structure higher than that, or HfO2, Ta2O5, TiO2, or MgO. It may be configured to have one. The dielectric layer 75 may have a single layer structure.

  The capacitive electrode 300 functions as a fixed potential side capacitive electrode of the capacitive element 70. In the present embodiment, in order to set the capacitor electrode 300 to a fixed potential, the capacitor electrode 300 is electrically connected to a later-described capacitor wiring 400 having a fixed potential. Further, the capacitor electrode 300 has a function of blocking light that is about to enter the TFT 30 from above. Similar to the lower electrode 71, the constituent material of the capacitor electrode 300 is composed of a single layer film or a multilayer film made of, for example, a metal, an alloy, conductive polysilicon, or conductive metal silicide (for example, WSi). Here, as a specific example, the capacitor electrode 300 is configured by a two-layer structure of a WSi layer and a polysilicon layer in order from the upper layer, and has a film thickness of about 150 nm. The capacitor electrode 300 having a two-layer structure composed of a WSi layer and a polysilicon layer has a light shielding property to the TFT 30 due to the presence of the WSi layer, and has a good electrical conductivity due to the presence of the polysilicon layer. In addition, the WSi layer may be a layer made of a metal such as aluminum.

  A first interlayer insulating film 41 made of, for example, a silicon nitride film or a silicon oxide film is formed on the TFT 30 to the gate electrode 3a and the relay electrode 719 described above and below the capacitor element 70.

  In the first interlayer insulating film 41, a contact hole 81 that electrically connects the high-concentration source region 1d of the TFT 30 and a data line 6a described later is formed through the second interlayer insulating film 42 described later. Has been. The first interlayer insulating film 41 is formed with a contact hole 83 that electrically connects the high-concentration drain region 1 e of the TFT 30 and the lower electrode 71 constituting the capacitor element 70. Further, the first interlayer insulating film 41 is formed with a contact hole 881 for electrically connecting the lower electrode 71 as a pixel potential side capacitor electrode constituting the capacitor element 70 and the relay electrode 719. Further, a contact hole 882 for electrically connecting the relay electrode 719 and a second relay electrode 6a2 described later is formed in the first interlayer insulating film 41 so as to penetrate the second interlayer insulating film described later. Yes.

  A data line 6a is provided in the fourth layer, which is an upper layer of the third layer. For example, the data line 6a is formed as a film having a three-layer structure of an aluminum layer 41A, a titanium nitride layer 41TN, and a silicon nitride layer 401 in order from the lower layer.

  In the fourth layer, a capacitor wiring relay layer 6a1 and a second relay electrode 6a2 are formed as the same film as the data line 6a.

  A second interlayer insulating film 42 made of a silicon nitride film, a silicon oxide film, or the like is formed on the capacitor element 70 and below the data line 6a. In the second interlayer insulating film 42, the contact hole 81 for electrically connecting the high concentration source region 1d of the TFT 30 and the data line 6a is formed, and the capacitor wiring relay layer 6a1 and the capacitor are connected. A contact hole 801 that electrically connects the capacitor electrode 300 that is the upper electrode of the element 70 is formed. Further, the contact hole 882 is formed in the second interlayer insulating film 42 for electrically connecting the second relay electrode 6a2 and the relay electrode 719.

  In the fifth layer, which is an upper layer of the fourth layer, the capacitor wiring 400 is formed. The capacitor wiring 400 is extended from the image display region 10a shown in FIG. 4 where the pixel electrode 9a is disposed to the periphery thereof, and is electrically connected to a constant potential source to be a fixed potential.

  In the fourth layer, the third relay electrode 402 is formed as the same film as the capacitor wiring 400. The third relay electrode 402 has a function of electrically connecting the second relay electrode 6a2 and the pixel electrode 9a through contact holes 804 and 89 described later.

  The capacitor wiring 400 and the third relay electrode 402 have a two-layer structure in which a lower layer is made of aluminum and an upper layer is made of titanium nitride.

  A third interlayer insulating film 43 made of a silicon nitride film, a silicon oxide film or the like is formed on the data line 6a and below the capacitor wiring 400. The third interlayer insulating film 43 includes a contact hole 803 for electrically connecting the capacitor wiring 400 and the capacitor wiring relay layer 6a1, and the third relay electrode 402 and the second relay electrode 6a2. Contact holes 804 are formed for electrical connection.

  In the sixth layer, the pixel electrodes 9a are formed in a matrix as described above, and the alignment film 16 is formed on the pixel electrodes 9a. A fourth interlayer insulating film 44 made of a silicon nitride film, a silicon oxide film or the like is formed under the pixel electrode 9a. In the fourth interlayer insulating film 44, a contact hole 89 for electrically connecting the pixel electrode 9a and the third relay electrode 402 is formed.

  That is, the contact hole 89, the third relay layer 402, the contact hole 804, the second relay layer 6a2, the contact hole 882, the relay electrode 719, and the contact hole 881 are provided between the pixel electrode 9a and the high concentration drain region 1e of the TFT 30. Then, they are electrically connected through the lower electrode 71 and the contact hole 83.

  When manufacturing the TFT array substrate 10 of the liquid crystal device which is the electro-optical device having the above-described configuration, in particular, the process after patterning the insulating film 2 which is the gate insulating film of the TFT 30 and the dielectric layer 75 of the capacitive element 70 are formed. In the process after the patterning, charges are likely to be accumulated in the insulating film 2 and the dielectric layer 75, and the insulating film 2 and the dielectric layer 75 are likely to be broken down due to discharge when the processing liquid is supplied. As a result, the yield of the liquid crystal device is deteriorated and the display quality is deteriorated.

  In the process of forming the TFT 30 that is a pixel switching element of the liquid crystal device and the capacitor element 70, if the above-described electro-optical device manufacturing method is used, the circuit element of the circuit element can be used while using a substrate processing apparatus similar to the conventional one. It is possible to effectively prevent electrostatic breakdown. For example, the method of manufacturing the electro-optical device according to this embodiment is applied to the resist stripping process after etching the gate electrode 3a after the formation of the insulating film 2 of the TFT 30, the cleaning process after the stripping process, or the subsequent cleaning process. By doing so, it is possible to effectively prevent the occurrence of defects in the electro-optical device, which is extremely useful. Needless to say, the present invention is also useful for resist stripping after etching the capacitor electrode 300 or cleaning after the stripping after the formation of the dielectric layer 75 of the capacitor 70.

  Of course, the manufacturing method of the electro-optical device of the present embodiment is also useful in other manufacturing processes of the TFT array substrate 10. For example, when applied to all the processes after the formation of the insulating film 2 of the TFT 30, the liquid crystal device is more effective. Needless to say, the yield is improved.

  Note that the electro-optical device according to the present invention described above can be applied not only to a TFT active matrix liquid crystal device but also to a passive matrix liquid crystal device. In addition to liquid crystal devices, electroluminescence devices, organic electroluminescence devices, plasma display devices, electrophoretic display devices, devices using electron-emitting devices (Field Emission Display, Surface-Conduction Electron-Emitter Display, etc.), etc. The present invention can be similarly applied to various electro-optical devices.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the gist or concept of the invention that can be read from the claims and the entire specification. The manufacturing method of the optical device is also included in the technical scope of the present invention.

1 is a cross-sectional view illustrating a schematic configuration of a wet processing apparatus 1. It is explanatory drawing which shows the state of positioning with a board | substrate and a multistage cup. It is a flowchart of the wet process which concerns on 1st Embodiment. FIG. 3 is a plan view of the electro-optical device when the TFT array substrate is viewed from the side of the counter substrate together with each component formed thereon. It is HH 'sectional drawing of FIG. It is an equivalent circuit such as various elements and wirings in a plurality of pixels formed in a matrix that forms an image display region. It is a schematic sectional drawing for demonstrating the laminated structure in a pixel part. It is explanatory drawing explaining schematic structure of the conventional board | substrate type substrate processing apparatus.

Explanation of symbols

  201 Wet Device, 202 Processing Chamber, 210 Substrate, 210a Surface to be Processed, 211 Substrate Holding Stage, 212 Chuck Pin, 218 Motor, 219 Control Unit, 220 Nozzle, 250 Multi-Stage Cup, 251 to 253 Processing Liquid Guide, 255 to 257 Treatment liquid recovery path, 271 to 274 recovery liquid storage tank, 280 path switching means

Claims (5)

A substrate for an electro-optical device is rotated around a vertical axis, and the substrate is processed by sequentially supplying a plurality of processing liquids to one surface of the substrate, and an annular opening opened on the substrate side during the processing The treatment liquid recovery means configured by arranging a plurality of treatment liquid guide portions in multiple stages in the vertical direction is scattered from the substrate by moving the treatment liquid relative to the vertical direction according to the types of the plurality of treatment liquids. An electro-optical device manufacturing method for recovering the processing liquid from the plurality of processing liquid guides different for each type,
During the processing, the processing liquid recovery means is moved only in the direction of lowering relative to the substrate.   Of the plurality of processing liquids, the processing performed on the substrate by the processing liquid discarded after the processing is performed in a state where the substrate is positioned above the upper end portion of the processing liquid recovery means. The method of manufacturing an electro-optical device according to claim 1.   The method of manufacturing an electro-optical device according to claim 1, wherein the processing liquid recovery unit is made of PTFE.   4. The method of manufacturing an electro-optical device according to claim 1, wherein the relative movement between the processing liquid recovery unit and the substrate is controlled by a control device. 5. The electro-optical device includes at least one of a switching element and a capacitive element,
5. The electro-optical device manufacturing method according to claim 1, wherein the electro-optical device is formed in a step of forming at least one of the switching element and the capacitive element on the substrate. Manufacturing method.

Images