CN110010694A - 一种高压多次外延型超结mosfet的结构及制造方法 - Google Patents
一种高压多次外延型超结mosfet的结构及制造方法 Download PDFInfo
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- CN110010694A CN110010694A CN201910373791.5A CN201910373791A CN110010694A CN 110010694 A CN110010694 A CN 110010694A CN 201910373791 A CN201910373791 A CN 201910373791A CN 110010694 A CN110010694 A CN 110010694A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 210000000746 body region Anatomy 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000000407 epitaxy Methods 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims description 23
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- 238000000206 photolithography Methods 0.000 claims description 11
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 238000001259 photo etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 description 4
- 238000002513 implantation Methods 0.000 description 2
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
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CN201910373791.5A CN110010694B (zh) | 2019-05-07 | 2019-05-07 | 一种高压多次外延型超结mosfet的结构及制造方法 |
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CN110010694A true CN110010694A (zh) | 2019-07-12 |
CN110010694B CN110010694B (zh) | 2024-03-12 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223915A (zh) * | 2020-01-16 | 2020-06-02 | 无锡新洁能股份有限公司 | 多次外延超结器件结构及其制造方法 |
CN113990757A (zh) * | 2021-10-27 | 2022-01-28 | 电子科技大学 | 一种mos器件结构及制造方法 |
CN114864696A (zh) * | 2022-04-22 | 2022-08-05 | 捷捷微电(上海)科技有限公司 | 一种sjmos器件结构及其制作工艺 |
Citations (7)
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CN102420252A (zh) * | 2011-12-08 | 2012-04-18 | 无锡新洁能功率半导体有限公司 | 超高元胞密度深沟槽功率mos器件及其制造方法 |
US9171949B1 (en) * | 2014-09-24 | 2015-10-27 | Alpha And Omega Semiconductor Incorporated | Semiconductor device including superjunction structure formed using angled implant process |
US9293527B1 (en) * | 2014-12-03 | 2016-03-22 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFET structure |
CN108091685A (zh) * | 2017-12-14 | 2018-05-29 | 福建晋润半导体技术有限公司 | 一种提高耐压的半超结mosfet结构及其制备方法 |
CN109686781A (zh) * | 2018-12-14 | 2019-04-26 | 无锡紫光微电子有限公司 | 一种多次外延的超结器件制作方法 |
CN109713029A (zh) * | 2018-12-14 | 2019-05-03 | 无锡紫光微电子有限公司 | 一种改善反向恢复特性的多次外延超结器件制作方法 |
CN209981222U (zh) * | 2019-05-07 | 2020-01-21 | 无锡紫光微电子有限公司 | 一种高压多次外延型超结mosfet的结构 |
-
2019
- 2019-05-07 CN CN201910373791.5A patent/CN110010694B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102420252A (zh) * | 2011-12-08 | 2012-04-18 | 无锡新洁能功率半导体有限公司 | 超高元胞密度深沟槽功率mos器件及其制造方法 |
US9171949B1 (en) * | 2014-09-24 | 2015-10-27 | Alpha And Omega Semiconductor Incorporated | Semiconductor device including superjunction structure formed using angled implant process |
US9293527B1 (en) * | 2014-12-03 | 2016-03-22 | Force Mos Technology Co., Ltd. | Super-junction trench MOSFET structure |
CN108091685A (zh) * | 2017-12-14 | 2018-05-29 | 福建晋润半导体技术有限公司 | 一种提高耐压的半超结mosfet结构及其制备方法 |
CN109686781A (zh) * | 2018-12-14 | 2019-04-26 | 无锡紫光微电子有限公司 | 一种多次外延的超结器件制作方法 |
CN109713029A (zh) * | 2018-12-14 | 2019-05-03 | 无锡紫光微电子有限公司 | 一种改善反向恢复特性的多次外延超结器件制作方法 |
CN209981222U (zh) * | 2019-05-07 | 2020-01-21 | 无锡紫光微电子有限公司 | 一种高压多次外延型超结mosfet的结构 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111223915A (zh) * | 2020-01-16 | 2020-06-02 | 无锡新洁能股份有限公司 | 多次外延超结器件结构及其制造方法 |
CN113990757A (zh) * | 2021-10-27 | 2022-01-28 | 电子科技大学 | 一种mos器件结构及制造方法 |
CN113990757B (zh) * | 2021-10-27 | 2024-03-26 | 电子科技大学 | 一种mos器件结构及制造方法 |
CN114864696A (zh) * | 2022-04-22 | 2022-08-05 | 捷捷微电(上海)科技有限公司 | 一种sjmos器件结构及其制作工艺 |
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Effective date of registration: 20240613 Address after: 100000 106A, Floor 1, B-1, Zhongguancun Dongsheng Science Park, 66 Xixiaokou Road, Haidian District, Northern Territory, Beijing Patentee after: ZIGUANG TONGXIN MICROELECTRONICS CO.,LTD. Country or region after: China Address before: 214135 Jiangsu Wuxi New District, 200, Linghu Road, China, four floor, D2 International Innovation Park, China sensor network. Patentee before: WUXI UNIGROUP MICROELECTRONICS CO.,LTD. Country or region before: China |