CN110003222B - 热活化延迟荧光材料及其制备方法与有机电致发光二极管器件 - Google Patents
热活化延迟荧光材料及其制备方法与有机电致发光二极管器件 Download PDFInfo
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Abstract
Description
技术领域
本发明属于电致发光材料技术领域,特别涉及一种热活化延迟荧光材料及其制备方法和有机电致发光二极管器件。
背景技术
有机电致发光二极管(Organic Light-Emitting Diode,OLED)显示面板以其主动发光不需要背光源、发光效率高、可视角度大、响应速度快、温度适应范围大、生产加工工艺相对简单、驱动电压低、能耗小、更轻更薄、柔性显示等优点以及巨大的应用前景,吸引了众多研究者的关注。
OLED器件的原理在于,在电场作用下,空穴和电子分别从阳极和阴极注入,分别通过空穴注入层、空穴传输层和电子注入层、电子传输层,在发光层复合形成激子,激子辐射衰减发光。
有机电致发光材料作为OLED器件的核心组成部分,对器件的使用性能具有很大的影响。OLED器件的发光层一般含有主体材料和客体材料,其中,起主导作用的发光客体材料至关重要。早期的OLED器件使用的发光客体材料为荧光材料,由于其在OLED器件中单重态和三重态的激子比例为1:3,因此基于荧光材料的OLED器件的理论内量子效率(IQE)只能达到25%,极大的限制了荧光电致发光器件的应用。重金属配合物磷光材料由于重原子的自旋轨道耦合作用,使得它能够同时利用单重态和三重态激子而实现100%的IQE。然而,通常使用的重金属都是铱(Ir)、铂(Pt)等贵重金属,并且重金属配合物磷光发光材料在蓝光材料方面尚有待突破。纯有机热活化延迟荧光(TADF)材料,具有电子给体(D)和电子受体(A)相结合的分子结构,通过巧妙的分子设计,使得分子具有较小的最低单三重能级差(ΔEST),这样三重态激子可以通过反向系间窜越(RISC)回到单重态,再通过辐射跃迁至基态而发光,从而能够同时利用单、三重态激子,也可以实现100%的IQE。
对于TADF材料,快速的反向系间窜越常数(kRISC)以及高的光致发光量子产率(PLQY)是制备高效率OLED器件的必要条件。目前,具备上述条件的TADF材料相对于重金属Ir配合物而言还是比较匮乏,且重金属配合物磷光材料在深红光领域尚有待突破,因此,开发具有高性能的深红光TADF材料具有特别重要的意义。
发明内容
本发明的目的在于提供一种热活化延迟荧光材料,具有超快反向系间窜越速率及高发光效率,为具有显著TADF特性且低能级的深红光TADF化合物,可作为有机电致发光二极管的发光层材料。
本发明另一目的在于提供一种热活化延迟荧光材料的制备方法,该方法易于操作,且获得目标产物的产率较高。
本发明又一目的在于提供一种有机电致发光二极管器件,采用上述热活化延迟荧光材料作为发光层材料,从而提高器件的发光效率。
为实现上述发明目的,本发明提供一种热活化延迟荧光材料,具有如下式一所示的化学结构:
式一
以上式一中,R表示作为电子给体的化学基团。
所述电子给体的化学基团R选自以下基团中的任意一种:
所述的热活化延迟荧光材料为化合物1、化合物2或化合物3,所述化合物1、化合物2和化合物3的结构式分别如下:
本发明还提供一种热活化延迟荧光材料的制备方法,其化学反应式如下:
具体为:向反应瓶中加入含电子给体化合物,然后在无水无氧环境下加入氢化钠,在氩气氛围下打入除水除氧的四氢呋喃,在55-65℃反应1.5-2.5小时,然后再加入卤代原料,再在55-65℃反应20-30小时,其中,向反应瓶中加入卤代原料、含电子给体化合物及氢化钠的摩尔比为1:2-4:2-4;反应结束后,冷却至室温,将反应液倒入冰水中,萃取后合并有机相,旋成硅胶,柱层析分离纯化,得产物,计算收率;
所述含电子给体化合物的结构通式为R-H,其中,R表示作为电子给体的化学基团。
所述电子给体的化学基团R选自以下基团中的任意一种:
所述含电子给体化合物为9,10-二氢-9,9-二甲基吖啶、吩噁嗪或吩噻嗪。
本发明还提供一种有机电致发光二极管器件,包括基板、设置于所述基板上的第一电极、设置于第一电极上的有机功能层及设置于所述有机功能层上的第二电极;
所述有机功能层包括一层或多层有机膜层,且至少一层所述有机膜层为发光层;
所述发光层包含如权利要求1-3中任一项所述的热活化延迟荧光材料。
所述发光层采用真空蒸镀或者溶液涂覆的方法形成。
所述发光层的材料为主体材料与客体材料的混合物,所述客体材料选自如权利要求1-3中任一项所述的热活化延迟荧光材料中的一种或多种。
所述基板为玻璃基板,所述第一电极的材料为氧化铟锡,所述第二电极为氟化锂层与铝层构成的双层复合结构;
所述有机功能层包括多层有机膜层,该多层有机膜层包括空穴注入层、空穴传输层、发光层、电子传输层,其中,所述空穴注入层的材料为HATCN,所述空穴传输层的材料为TCTA,所述电子传输层的材料为TmPyPB,所述主体材料为mCBP。
相比于已有材料和技术,本发明具有如下优点和有益效果:
(1)本发明采用大共轭平面的强吸电子基团作为电子受体,并通过将该电子受体与强的电子给体结合,设计出具有显著TADF特性且低能级的深红光热活化延迟荧光材料;
(2)本发明的热活化延迟荧光材料,为具有较低单三线态能级差、超快反向系间窜越速率及高发光效率的深红光的TADF材料,当其作为发光材料应用于有机电致发光二极管器件时,可以提高有机发光显示装置的发光效率,基于本发明的深红光的热活化延迟荧光材料的有机电致发光二极管器件都取得了非常高的器件效率。
附图说明
下面结合附图,通过对本发明的具体实施方式详细描述,将使本发明的技术方案及其它有益效果显而易见。
附图中,
图1为本发明具体实施例1-3中所制备的化合物1-3的HOMO与LUMO能级分布图;
图2为本发明具体实施例1-3中所制备的化合物1-3在室温下正己烷溶液中的光致发光光谱图;
图3为本发明有机电致发光二极管器件的结构示意图。
具体实施方式
本发明中所用的未注明的一些原料均为市售商品。一些化合物的制备方法将在实施案例中描述。下面结合具体实施例对本发明作进一步具体详细描述,但本发明的实施方式不限于此。
实施例1:
目标化合物1的合成路线如下:
向100mL二口瓶中加入9,10-二氢-9,9-二甲基吖啶(2.51g,12mmol),然后在手套箱中加入氢化钠NaH(0.48g,12mmol),在氩气氛围下打入40mL事先除水除氧的四氢呋喃(THF),在60℃反应2小时,然后再加入原料1(5mmol,1.35g),再在60℃反应24小时。冷却至室温,将反应液倒入200mL冰水中,二氯甲烷萃取三次,合并有机相,旋成硅胶,柱层析(二氯甲烷:正己烷,v:v,3:2)分离纯化,得2.0g橙红色粉末的化合物1,产率62%。
1HNMR(300 MHz,CD2Cl2,δ):8.74(s,4H),7.19-7.14(m,12H),6.98-6.93(m,4H),1.69(s,12H)。
MS(EI)m/z:[M]+calcd for C42H32N8,648.27;found,648.18。
实施例2:
目标化合物2的合成路线如下:
向100mL二口瓶中加入吩噁嗪(2.20g,12mmol),然后在手套箱中加入NaH(0.48g,12mmol),在氩气氛围下打入40mL事先除水除氧的四氢呋喃,在60℃反应2小时,然后再加入原料1(5mmol,1.35g),再在60℃反应24小时。冷却至室温,将反应液倒入200mL冰水中,二氯甲烷萃取三次,合并有机相,旋成硅胶,柱层析(二氯甲烷:正己烷,v:v,3:2)分离纯化,得1.9g红色粉末的化合物2,产率64%。
1H NMR(300MHz,CD2Cl2,δ):8.74(s,4H),7.14-7.06(m,4H),7.01-6.95(m,12H)。
MS(EI)m/z:[M]+calcd for C36H20N8O2,596.17;found,596.16。
实施例3:
目标化合物3的合成路线如下所示:
向100mL二口瓶中加入吩噻嗪(2.39g,12mmol),然后在手套箱中加入NaH(0.48g,12mmol),在氩气氛围下打入40mL事先除水除氧的四氢呋喃,在60℃反应2小时,然后再加入原料1(5mmol,1.35g),再在60℃反应24小时。冷却至室温,将反应液倒入200mL冰水中,二氯甲烷萃取三次,合并有机相,旋成硅胶,柱层析(二氯甲烷:正己烷,v:v,3:2)分离纯化,得1.5g深红色粉末的化合物3,产率48%。
1H NMR(300MHz,CD2Cl2,δ):8.74(s,4H),7.21-7.13(m,12H),6.97-6.88(m,4H)。
MS(EI)m/z:[M]+calcd for C36H20N8S2,628.13;found,628.10。
图1示出了化合物1-3的轨道排布情况,从图1中可以明显看出,化合物1-3的最高电子占据轨道(HOMO)与最低电子未占据轨道(LUMO)均分别排布在不同的单元上,实现了完全的分离,这有助于减小系间能差ΔEST,从而提高反向系间窜越能力。图2示出了化合物1-3在室温下正己烷溶液中的光致发光光谱。针对化合物1-3,模拟计算了分子的最低单线态能级S1和最低三线态能级T1。
实施例1-3的相关数据如表1所示。由表1可以看出,所有化合物的ΔEst均小于0.3ev,实现了较小的单线态和三线态能级差,具有明显的延迟荧光效应。
表1、化合物1-3的光物理性质结果
表1中,PL Peak表示光致发光峰,S1表示单线态能级,T1表示三线态能级,ΔEST表示单线态和三线态能级差。
实施例4:
有机电致发光二极管(OLED)器件的制备:
如图1所述,本发明的热活化延迟荧光材料作为发光层客体材料的有机电致发光二极管器件,可包括从下到上依次设置的基板9、阳极层1、空穴注入层2、空穴传输层3、发光层4、电子传输层5、及阴极层6。其中,所述基板9为玻璃基板,所述阳极1的材料为氧化铟锡(ITO),所述基板9与阳极1共同构成ITO玻璃,所述ITO玻璃的方块电阻为10Ω/cm2。所述空穴注入层2的材料为HATCN,所述空穴传输层3的材料为TCTA,所述发光层的材料为本发明的活化延迟荧光化合物与mCBP的混合物,所述电子传输层5的材料为TmPyPB。所述阴极为氟化锂(LiF)层与铝(Al)层构成的双层结构。
其中,HATCN指2,3,6,7,10,11-六氰基-1,4,5,8,9,12-六氮杂苯并菲,TCTA指4,4',4”-三(咔唑-9-基)三苯胺,mCBP指3,3'-二(N-咔唑基)-1,1'-联苯,TmPyPB指1,3,5-三(3-(3-吡啶基)苯基)苯。
所述有机电致发光二极管器件可按本领域已知方法制作,具体方法为:在经过清洗的ITO玻璃上,高真空条件下依次蒸镀2nm厚的HATCN膜、35nm厚的TCTA膜、mCBP加活化延迟荧光化合物、40nm厚的TmPyPB膜、1nm厚的LiF膜和100nm厚的Al膜。用该方法制得如图3所示的器件,各种具体的器件结构如下:
器件1:
ITO/HATCN(2nm)/TCTA(35nm)/mCBP:化合物1(5%40nm)/TmPyPB(40nm)/LiF(1nm)/Al(100nm)
器件2:
ITO/HATCN(2nm)/TCTA(35nm)/mCBP:化合物2(5%40nm)/TmPyPB(40nm)/LiF(1nm)/Al(100nm)
器件3:
ITO/HATCN(2nm)/TCTA(35nm)/mCBP:化合物3(5%40nm)/TmPyPB(40nm)/LiF(1nm)/Al(100nm)
器件1-3的电流-亮度-电压特性是由带有校正过的硅光电二极管的Keithley源测量系统(Keithley 2400 Sourcemeter、Keithley 2000 Currentmeter)完成的,电致发光光谱是由法国JY公司SPEX CCD3000光谱仪测量的,所有测量均在室温大气中完成。器件1-3的性能数据见下表2。
表2、基于化合物1-3为发光层客体材料的器件的性能结果
器件 | 最高电流效率(cd/A) | CIEy | 最大外量子效率(%) |
器件1 | 34.1 | 0.65 | 23.1 |
器件2 | 26.4 | 0.68 | 20.2 |
器件3 | 18.5 | 0.71 | 16.9 |
表2中,CIEy为标准CIE色彩空间的y坐标值。
综上所述,本发明采用大共轭平面的强吸电子基团作为电子受体,并通过将该电子受体与强的电子给体结合,合成出具有显著TADF特性且低能级的深红光热活化延迟荧光材料,并利用TADF材料的100%内量子利用效率,将本发明的热活化延迟荧光材料作为发光材料应用于有机电致发光二极管器件,可以提高有机发光显示装置的发光效率,基于本发明的深红光的热活化延迟荧光材料的有机电致发光二极管器件都取得了非常高的器件效率。
上述实施例为本发明较佳的实施方式,但本发明的实施方式并不受上述实施例的限制,其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化,均应为等效的置换方式,都包含在本发明的保护范围之内。
Claims (7)
2.一种热活化延迟荧光材料的制备方法,其特征在于,其化学反应式如下:
具体为:向反应瓶中加入含电子给体化合物,然后在无水无氧环境下加入氢化钠,在氩气氛围下打入除水除氧的四氢呋喃,在55-65℃反应1.5-2.5小时,然后再加入卤代原料,再在55-65℃反应20-30小时,其中,向反应瓶中加入卤代原料、含电子给体化合物及氢化钠的摩尔比为1:2-4:2-4;反应结束后,冷却至室温,将反应液倒入冰水中,萃取后合并有机相,旋成硅胶,柱层析分离纯化,得产物,计算收率;
所述含电子给体化合物的结构通式为R-H,其中,R表示作为电子给体的化学基团;
所述含电子给体化合物为9,10-二氢-9,9-二甲基吖啶、吩噁嗪或吩噻嗪。
4.一种有机电致发光二极管器件,其特征在于,包括基板、设置于所述基板上的第一电极、设置于第一电极上的有机功能层及设置于所述有机功能层上的第二电极;
所述有机功能层包括一层或多层有机膜层,且至少一层所述有机膜层为发光层;
所述发光层包含如权利要求1所述的热活化延迟荧光材料。
5.如权利要求4所述的有机电致发光二极管器件,其特征在于,所述发光层采用真空蒸镀或者溶液涂覆的方法形成。
6.如权利要求4所述的有机电致发光二极管器件,其特征在于,所述发光层的材料为主体材料与客体材料的混合物,所述客体材料选自如权利要求1所述的热活化延迟荧光材料中的一种或多种。
7.如权利要求6所述的有机电致发光二极管器件,其特征在于,所述基板为玻璃基板,所述第一电极的材料为氧化铟锡,所述第二电极为氟化锂层与铝层构成的双层复合结构;
所述有机功能层包括多层有机膜层,该多层有机膜层包括空穴注入层、空穴传输层、发光层、电子传输层,其中,所述空穴注入层的材料为HATCN,所述空穴传输层的材料为TCTA,所述电子传输层的材料为TmPyPB,所述主体材料为mCBP。
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