CN109950250B - 具有矩阵冷却的数据中心3d固态驱动 - Google Patents

具有矩阵冷却的数据中心3d固态驱动 Download PDF

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CN109950250B
CN109950250B CN201711383612.3A CN201711383612A CN109950250B CN 109950250 B CN109950250 B CN 109950250B CN 201711383612 A CN201711383612 A CN 201711383612A CN 109950250 B CN109950250 B CN 109950250B
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solid state
semiconductor devices
state drive
substrate
cooling channels
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CN109950250A (zh
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邱进添
姬忠礼
H.塔基亚
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Shandi Trading Shanghai Co ltd
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SanDisk Information Technology Shanghai Co Ltd
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Abstract

公开了一种固态驱动，所述固态驱动包含用于数据中心的半导体器件的共面阵列，以及用于冷却所述半导体器件的共面阵列的系统。所述半导体器件可以以栅格图案布置，彼此间隔开，以便在所述半导体器件周围和半导体器件之间限定流动路径或冷却通道的行和列。

Description

具有矩阵冷却的数据中心3D固态驱动
背景技术
便携消费电子的需求的强劲增长正驱动对高容量存储器件的需求。非易失性半导体存储器器件——比如闪速存储器储存卡——正变得被广泛用于满足对数字信息储存和交换的不断增长需求。它们的便携性、多功能性和坚固的设计、连同它们的高可靠性和大容量使得这种存储器器件理想地适用于广泛的电子器件，所述电子器件包含例如数字相机、数字音乐播放器、视频游戏机、PDA和蜂窝电话。
考虑到非易失性存储器器件的优势，目前有使用它们替代传统硬盘驱动(HDD)在企业数据中心中作为固态驱动(SSD)的动力。特别是，因为SSD电子地储存数据，并且不需要HDD的机械接口，所以SSD可以比HDD更快地读取和写入数据。电子接口对比机械接口的另一个特征是SSD倾向于对于持续更久，并且对于读取/写入操作使用更少的功率。
每天产生的数据量正在飞速增长，对数据中心提出的需要越来越大。这对数据中心SSD带来了两个挑战。第一是存储容量。随着在SSD技术的最新进展，SSD的存储容量已经在最近超过了HDD的存储容量，并且SSD正以比HDD更快的速度扩展。然而，满足企业数据中心的数据需求仍然是一个不变的问题。第二个挑战是冷却。SSD的集中使用在封闭空间内产生大量的热量。无法有效地冷却企业数据中心的SSD限制了这种驱动的操作性能力。
发明内容
总的来说，在一个示例中，本技术涉及一种固态驱动，包括：衬底；多个半导体器件，耦接到衬底，并且在半导体器件的间隔开的行和列的至少一个中列阵；多个冷却通道，由半导体器件的间隔开的行和列中的至少一个限定，多个冷却通道配置为接收流过冷却通道的冷却流体，以从多个半导体器件带走热量。
在另一实施例中，本技术涉及一种固态驱动，包括：衬底；多个半导体器件，具有耦接到衬底的第一表面；盖，贴附到多个半导体器件的第二表面，第二表面与第一表面相对；以及多个冷却通道，从固态驱动的第一边缘延伸到固态驱动的第二边缘，多个冷却通道中的每个冷却通道由衬底、盖、第一组多个半导体器件和第二组多个半导体器件限定，其中第一组和第二组半导体器件排彼此相邻地对齐，并且在固态驱动的第一边缘和第二边缘之间延伸，多个冷却通道配置为接收冷却流体，以从多个半导体器件移除热量。
在另一实施例中，本技术涉及一种冷却固态驱动的方法，包括：(a)在衬底和盖之间安装多个半导体器件，使得多个半导体器件、衬底和盖限定多个冷却通道；以及(b)引入流体流过多个冷却通道，以从多个半导体器件移除热量。
在又一实施例中，本技术涉及一种固态驱动，包括：多个半导体器件，具有第一表面和与第一表面相对的第二表面；信号通信构件，贴附到多个半导体器件的第一表面，所述信号通信构件用于从多个半导体器件传送信号到主机器件；盖构件，贴附到多个半导体器件的第二表面，所述盖器件用于密封多个半导体器件；以及冷却构件，用于提供从多个半导体裸芯上移除热量。
附图说明
图1是根据本技术的实施例的固态驱动的整体制造工艺的流程图。
图2是根据本技术的实施例的3-D立方体半导体器件的透视图。
图3是根据本技术的实施例的贴附到载体的半导体器件阵列的俯视图。
图4是根据本技术的实施例的待安装在半导体器件阵列上的衬底的透视图。
图5是根据本技术的实施例的待安装到半导体器件阵列的衬底的边缘视图。
图6-8是根据本技术的实施例的安装到半导体器件阵列的衬底的边缘视图。
图9是根据本技术的实施例的固态驱动的透视图。
图10是根据本技术的实施例的待安装在固态驱动上的盖的仰视图。
图11是根据本技术的实施例的示出冷却通道的固态驱动的透视图。
图12是根据本技术的实施例的固态驱动的透视图，示出了流过冷却通道和流体管的流体。
图13是根据本技术的实施例的固态驱动的透视图，示出了流过冷却通道的流体。
图14是根据本技术的实施例的包括冷却通道的固态驱动的温度相对于流体流量的图。
图15和图16是根据本技术的替代实施例的限定冷却通道的半导体器件阵列的俯视图。
图17是比如其中可以实现本技术的固态驱动的数据中心的计算环境的框图。
具体实施方式
现在将参照附图描述本技术，附图在实施例中涉及包含用于数据中心的半导体器件的平面阵列的固态驱动，以及用于冷却半导体器件的平面阵列的系统。半导体器件可以以栅格图案布置，彼此间隔开，以便在半导体器件周围和半导体器件之间限定流动路径的行和列。半导体器件的平面阵列可以通过热压工艺在一个主表面上物理地和电气地键合到大衬底上。平面阵列可以在相对的主表面上物理地键合到盖。半导体器件与衬底和盖之间的路径限定了冷却通道，冷却流体可通过该冷却通道流动以将热量从平面阵列中的半导体器件带走。
应当理解的是，本技术可以以多种不同形式实现，并且不应被解释为受限于本文中所阐述的实施例。相反，提供这些实施例是为了本公开透彻和完整，并且将本技术完全传达给本领域的技术人员。实际上，该技术旨在覆盖这些实施例的替代例、修改以及等效物，它们被包含在如所附权利要求所限定的技术的范围和精神内。此外，在下面对本技术的详细描述中，阐述了许多特定细节以提供本技术的透彻理解。然而，对于本领域的技术人员来说将清楚，本技术可以没有这些特定细节而实践。
如本文中所使用的术语“顶部”和“底部”、“上”和“下”以及“垂直”和“水平”仅是作为示例和说明的目的，并且不意味着限制本技术的描述，因为所参考的部分可以在位置和定向上交换。此外，如本文中所使用的，术语“实质上”、“大约”和/或“约”意味着特定尺寸或参数可以对给定应用中在可接受的制造误差内变化。在一个实施例中，可接受的制造误差是±0.25％。
现在将参考图1的流程图以及图2-16的图解释本技术的实施例。本技术以步骤200中的多个半导体器件的形成开始。图2中示出了一个这样的半导体器件100。在实施例中，半导体器件100可以是3-D立方体半导体器件，其中所述半导体器件的覆盖区(footprint)等于半导体裸芯102在器件100中所用的覆盖区。
半导体器件100可以使用多个堆叠的半导体裸芯102制造，每个具有延伸到器件100的边缘104的裸芯键合衬垫。这可以通过具有裸芯键合衬垫来实现，所述裸芯键合衬垫至少部分延伸到从其形成半导体裸芯102的半导体晶片的划线区域中。在这样的实施例中，当从晶片中切割裸芯时，裸芯键合衬垫可能被割断，留下在边缘104处暴露的裸芯键合衬垫的边缘。在其它实施例中，裸芯键合衬垫可以通过包含重布线层(RDL)的其它方式延伸到裸芯102的边缘104。
可以使用裸芯附着薄膜(DAF)将裸芯102堆叠在彼此之上。此后，电迹线108的图案可以形成在边缘104上，使用例如化学的或薄膜沉积技术，以在3-D立方体的不同层级上的边缘104处电气地互连各个裸芯102的裸芯键合衬垫。示出的特定图案仅作为示例，并且可能在其它实施例中变化。最后，可以将焊接凸点110沉积在电迹线108上，以将半导体器件100电气地连接到如下文所述的衬底。
器件100中的半导体裸芯102还可以是例如NAND闪存裸芯，但是在其它实施例中可以是其它类型的半导体裸芯。器件100中的堆叠的半导体裸芯102的数目可能变化，但是可以是例如2、4、6、8、16或32个半导体裸芯。在其它实施例中，在半导体器件100中可以有更多、更少或者其它数目的裸芯102。此外，尽管示出的实施例包含在边缘104上的迹线108的图案，以电气地互连器件100中的半导体裸芯102，但是裸芯102在其它实施例中可通过其它方法电气地互连，包含例如通过硅通孔(TSV)。这些通孔可以连接到焊接凸点110。尽管实施例中半导体器件100可以是3-D立方体，但是在其它实施例中半导体器件100可以使其它类型的封装内系统(SIP)半导体器件。
在步骤202中，可以将如图2所示的一些半导体器件100钉扎或暂时贴附在如图3和图4所示的卡盘或载体112上的网格图案中。可以将器件100贴附使得包含焊接凸点110的边缘104可能面朝上，远离载体112。在实施例中，可以将半导体器件100布置在平行的行(沿x方向)和平行的列(沿y方向)中，以形成在每行和每列中的半导体器件100之间具有间隔的统一网格图案。如下文所述，该间隔的半导体器件100的统一网格图案创造流体流通路径，该流体流通路径在本文中被称为冷却通道，该流体流通路径在半导体器件100之间以用于冷却器件100。在一个示例中，可能有十二行和十二列。然而，在其它实施例中，行和列的数目可能彼此成比例或者不成比例地变化。
在步骤206中，衬底120(图4)可以物理地或电气地耦接到载体112上的半导体器件100。衬底120可以作为用于传送信号到多个半导体器件100或从多个半导体器件100传送信号的信号通信器件。衬底可以包含具有接触衬垫122的图案的表面120a(其中一些在图5中示出)。衬底120还可以包含迹线和通孔(未示出)的图案，以用于将接触衬垫122电气地连接下文所述的I/O连接器128。
在图案中提供接触衬垫122以与半导体器件100的阵列的焊接凸点110匹配。特别地，在压力和升高的温度下将衬底120施加到半导体器件100的阵列，以将每个半导体器件100物理地和电气地耦接到衬底120。在实施例中，可以将每个半导体器件100同时键合到衬底120的接触衬垫122。在实施例中，可以将半导体器件100和衬底加热到例如260℃的温度，并且可以将衬底120降低(沿图4中箭头A的方向)到包含焊接凸点110的半导体器件100的上表面上。可以将压力运用到衬底120的表面120b上。可以施加升高的温度和压力持续比如5秒的时间段。该时间和温度足以回流焊接凸点110，并且实现在焊接凸点和接触衬垫之间的铜扩散，从而在半导体器件100与衬底120之间建立所有连接。应当理解的是，所阐述的温度、压力和时间段中的每一个可以在其它实施例中变化。作为另一个实施例，可以将半导体器件100和衬底120加热到100℃，持续一个小时的时间段。
理想地，每个半导体器件100具有统一的高度，使得包含焊接凸点110的上表面位于单一平面内，以统一地键合到包含接触衬垫122的衬底120的平面表面内。然而，在实践中，考虑到半导体器件100制造中的误差，在各个器件100上的焊接凸点110可能不都共面，如图5所示。相应地，在实施例中，即使器件100具有不同的高度，衬底120可以足够柔性使得在液压下衬底120可以与每个半导体器件100的焊接凸点耦接，如图6中的边缘视图所示。
即使如图6中所示出的衬底已经变形以接触不同高度的半导体器件，使用液压和柔性的衬底120允许在衬底120上的统一向下的力。可想到的是，衬底120可以是刚性的。在这样的实施例中，如图7所示，每个半导体器件100可以独立地向上受力，例如在液压下在半导体器件100底部上，以接触刚性衬底120。在图7的实施例中，即使半导体器件100具有不同高度，衬底可以保持共面并且连接到每个半导体器件100。
如图8所示，可以在焊接凸点110与接触衬垫122之间的界面处提供薄膜层124，使得所有这样的电连接嵌入在薄膜层124内。如下面所述，可以围绕半导体器件100注入冷却流体，并且薄膜层124电气地隔离电连接。薄膜层124可以用本领域已知的各种环氧树脂形成。
图9示出了连接到半导体器件100的共面阵列以形成固态驱动(SSD)150的衬底120。衬底120可以包含用于将SSD 150连接到主机器件的输入/输出(I/O)连接器128，比如计算机、印刷电路板或底板。I/O连接器128在图中示意性地示出，并且可能具有用于将SSD150连接到主机器件的广泛配置中的任何配置。
图10是SSD 150的仰视图。图10还说明了可以在步骤210中贴附到SSD 150的盖154。盖154可以是基本上刚性、平面的薄片，由例如金属或其它热导体形成以利于从半导体100中移除热量。在其它实施例中，盖可以由塑料或其它材料形成。可以用环氧树脂或其它粘合剂将盖154贴附到SSD150上。
图11是示出包含衬底120、半导体器件100和盖154的SSD 150的俯视图。如上面所提到的，可以将半导体器件100布置在其间具有空格的平行的行中和列中，以形成沿x方向和沿z方向延伸的冷却通道160(其中一些在图11中被编号)，所述半导体器件100使用图上所提供的参考框架。图11示出沿x方向延伸穿过SSD 150的冷却通道。应当理解的是，尽管中图11中为说明性目的而示出，可以实际上将冷却通道封装在SSD 150内。在SSD150的边缘处仅可见冷却通道160的开口，围绕SSD 150的周长。
根据本技术的其它方面，可以在SSD 150的一个边缘处、SSD 150的两个相对的边缘处、SSD 150的两个相邻的边缘处、或围绕SSD 150的所有四个边缘处将冷却流体注入进冷却通道160中。图12说明其中将冷却流体在沿x方向的相对边缘处被注入进SSD 150的实施例。可以将冷却流体均匀(即，用相同的力)地沿整个边缘引入。可替代地，可以将冷却流体沿边缘不均匀地引入，比如朝向边缘的中间部分以更大的力被引入。在图12的实施例中，冷却流体可以是空气或其它气体，通过位于相邻于SSD 150的相对边缘处的一对风扇(未示出)压入到SSD 150的相对边缘处的冷却通道160中。
图12的实施例还示出了延伸穿过盖154与冷却通道160连通的流体管164。注入进相对的边缘的流体通过对流从半导体器件100带走热量，然后通过流体管164离开SSD 150。尽管图12示出从相对的边缘进入的流体，但是流体可以从如上面所描述的一个或多个边缘的任一个进入。可以将冷却流体持续地注入进SSD 150的边缘以在SSD 150的操作期间持续地从半导体器件100带走热量。可替代地，可以按需要周期性地将冷却流体注入进SSD150的边缘中，以冷却半导体器件100。
流体管164可能具有例如1/4英寸到1/2英寸的内径，尽管在其它实施例中，内径可能更大或更小。管164可以在SSD 150的盖154之上具有1至4英寸的长度，尽管在其它实施例中，管可以比上述更长或更短。在一个示例中，流体管164可以在盖154上均匀分布，并且流体管164的总数目可以变化，只要管的数目和管的直径足以允许离开SSD 150的流体的量大于或等于从一个或多个边缘处进入SSD 150的流体的量。流体管164可以位于沿x方向延伸的冷却通道160之上、沿z方向的冷却通道160之上和/或x方向的冷却通道遇到z方向的冷却通道的接合处。
图12示出沿x方向进入SSD 150的相对边缘并从盖154中的流体管164离开的冷却流体。在其它实施例中，冷却流体可以进入沿z方向的SSD 150的相对边缘，并且离开流体管164。在其它的实施例中，可以按循环地重复的序列注入冷却流体，一开始通过第一对相对边缘注入，然后通过第二对相对边缘注入。在其它的实施例中，可以按一些循环地重复的方式连续地以将工作流体通过第一边缘、然后通过第二边缘、然后通过第三边缘、然后通过第四边缘注入。
在实施例中，流体管164可以排泄到周围。然而，在其它实施例中，流体管154可以连接到真空或其它低压力源(未示出)以从流体管164中拉出流体。在实施例中，所有流体管164可以连接到相同的低压力源、或者具有相同压力的压力源。在其它实施例中，流体管164连接到施加不同压力的不同低压力源。例如，朝向SSD 150中心的(多个)负压力源可以施加比靠近SSD边缘的(多个)压力源更负、更强的负压力。
在其它实施例中，冷却流体可以替代地通过盖154中的流体管164注入，并且通过一个或多个边缘离开SSD 150。在其它实施例中，流体管164可以省略。在这样的实施例中，可以将流体注入进一个或多个边缘，并且通过剩余边缘离开SSD 150。
如上面所提到的，图12中的流体管实施例中所使用的冷却流体可以是空气或者其它气体。然而流体的表面张力可能使流体在使用流体管的实施例中次优，在其它实施例中，冷却流体可以使流体。图13说明了可能更适合比如去离子水或其它流体的冷却流体的实施例。在图13的实施例中，可以通过SSD 150的一个边缘注入冷却流体，行进通过冷却通道160，并且离开SSD 150的相对边缘。工作流体可以如所示沿x方向行进，或者可替换地沿z方向行进。和上面一样，可以同时或按一些循环地重复的方式连续地通过一个或多个边缘注入流体。冷却流体还可以可替换地是图13中的实施例中的气体。
图14是示出图13的实施例中的半导体器件100的冷却的示例的图，该示例中具有冷却流体和产生1800W功率的SSD 150。该实施例示出了在0.1m/s与2m/s之间的样本流速，以及使用这样的流体流速的SSD 150中的半导体器件100的最大温度。该图示出下面的流速和相应的温度：
<u>流速</u> <u>温度(最大)(C)</u>
0.1 71.0
0.25 56.3
0.5 49.0
1.0 46.5
2.0 44.4
这些温度远低于在数据中心内的高密度固态驱动的操作的最大温度。上述最大温度通常发生在SSD 150的边缘，其中冷却流体离开SSD 150。
在上述的实施例中，将半导体器件100排列在平行的行和列中以限定冷却通道160延两个正交的方向延伸。在其它实施例中，半导体器件100可以在平行的行或列中列阵，但不是在平行的行或列中均列阵。例如在图15中示出了这样的实施例。在所说明的实施例中，器件100在行中，而不是在列中对齐，使得冷却流体可以沿冷却通道160穿过定向在x方向中的SSD 150。还可以将半导体器件可替换地以对齐沿z方向的冷却通道来列阵。在其它的实施例中，可想到的是，半导体器件100在行上不对齐，并且在列上也不对齐。这样的实施例可以包含不是笔直的冷却通道160。
在上述的实施例中，半导体器件100的边缘至少大多与SSD 150的边缘平行。然而，如图16所示，相应的半导体器件100的轴不需要与SSD 150的边缘平行。在这样的实施例中，冷却通道160可以形成与SSD 150的边缘的斜角。此外，尽管半导体器件100被示出延伸到基板120和盖154的边缘，应当理解的是，在其它实施例中，基板120和/或盖154的边缘可以在一个边缘、两个相对或相邻边缘、三个边缘或所有四个边缘处延伸出半导体器件的覆盖区。
在上述的实施例中，盖154在半导体器件相对于基板120的半导体器件的侧面直接贴附到半导体器件100的表面。在其它的实施例中，盖154可以支撑在半导体器件100的表面上，并且与半导体器件100的表面稍微地间隔开。在这样的实施例中，冷却流体可以如上所述流过冷却通道160，但还可以在与盖154相邻(但间隔开)的半导体器件100的表面之上流动。这样的实施例可以增加与冷却流体直接接触的半导体器件的表面面积，并且可以改善从半导体器件的热量的抽取。盖154可以通过从盖154延伸并且固定到基板120或半导体器件100的桩支撑在半导体器件之上。在这个实施例中，盖可以与半导体器件间隔开1mm至5mm，尽管该间隔在其它实施例中可以更大或更小。
图17是比如其中可以使用SSD 150的数据中心300的计算环境的框图。特定网络器件可以利用所示出的所有部件，或仅是部件的一部分，并且集成的层级可以随着器件而变化。此外，数据中心300可以含有一个部件的多个示例——比如多个SSD 150，以及多个处理单元、发射器、接收机等。数据中心300可以包括中心处理单元(CPU)310、存储器320、可以是上面所描述的SSD 150的大量存储器件，以及连接到总线370的I/O接口360。总线370可以是包含存储器总线或存储器控制器、外围总线等的多个总线架构中的任一类型的一个或多个。
CPU 310可以包括任何类型的电子数据处理器。存储器320可以包括任何类型的系统存储器——比如静态随机存取存储器(SRAM)、动态随机存取存储器(DRAM)、同步DRAM(SDRAM)、只读存储器(ROM)、上述的组合或类似物。在一个实施例中，存储器320可以包含启动时所使用的ROM，以及用于当执行程序时所使用的程序和数据存储的DRAM。在实施例中，存储器320可以是非瞬时性的。SSD 150可以经由存储器控制器330与CPU 310或其它部件通信。
数据中心300还可以包含一个或多个网络接口350，所述网络接口350包括有线链接——比如以太网电缆等，和/或到接入节点或一个或多个网络380的无线链接。网络接口350允许数据中心300经由网络380与远程单元通信。例如，网络接口350可以经由一个或多个发射机/发射天线和一个或多个接收机/接收天线提供无线通信。在一个实施例中，处理单元301耦接到局域网或者广域网，以用于处理数据和与远程器件通信，该远程器件比如其它处理单元、因特网、远程存储设施等。
已经为说明和描述的目的呈现了对技术的前述详细描述。不旨在穷尽或限制本技术到公开的精确形式。在上述教导的启发下，许多修改和变化是可能的。选择所描述的实施例是为了最好地解释本技术的原理及其实际应用，从而使本领域的其它技术人员能够在各种实施例中以及以适合于所预期的特定用途的各种修改中最好地利用本技术。旨在本技术的范围由所附的权利要求限定。

Claims (22)

1.一种固态驱动，包括：
衬底，包括多个接触衬垫；
多个半导体器件，耦接到所述衬底，并且排列为半导体器件的间隔开的行或列中的至少一者；
多个电气地导电的凸点，在所述多个半导体器件的表面上，其中所述多个接触衬垫以与所述多个电气地导电的凸点匹配的方式耦接到所述多个电气地导电的凸点；
多个冷却通道，由所述半导体器件的间隔开的行或列中的至少一者限定，所述多个冷却通道配置为接收流过所述多个冷却通道的冷却流体，以从所述多个半导体器件带走热量，并且所述多个冷却通道中的冷却通道向围绕固态驱动的环境的开口，
其中所述多个冷却通道包括向围绕固态驱动的环境的开口的第一端和第二端，所述固态驱动还包括一个或多个流体管，所述一个或多个流体管在垂直于所述衬底的方向上延伸穿过所述固态驱动的外部表面至在所述第一端和第二端之间与所述多个冷却通道连通。
2.如权利要求1所述的固态驱动，其中所述多个半导体器件电气地耦接到所述衬底。
3.如权利要求1所述的固态驱动，其中所述多个半导体器件物理地耦接到所述衬底。
4.如权利要求1所述的固态驱动，其中所述衬底是柔性的以与所述多个半导体器件的表面的可变高度耦接。
5.如权利要求1所述的固态驱动，还包括贴附到所述多个半导体器件的与耦接到所述衬底的表面相对的表面的盖。
6.如权利要求5所述的固态驱动，所述多个冷却通道中的冷却通道由所述衬底、所述盖和半导体器件的一对相邻行或列所界定。
7.如权利要求1所述的固态驱动，其中所述多个半导体器件的每一个包括具有多个半导体裸芯的3-D立方体。
8.一种固态驱动，包括：
衬底，包括多个接触衬垫；
多个半导体器件，具有耦接到所述衬底的第一表面；
多个电气地导电的凸点，在所述多个半导体器件的表面上，其中所述多个接触衬垫以与所述多个电气地导电的凸点匹配的方式耦接到所述多个电气地导电的凸点；
盖，具有面向固态驱动的外部的第一表面以及第二表面，所述第二表面与所述第一表面相对，安装在所述多个半导体器件的第二表面处，所述第二表面与所述第一表面相对；
多个冷却通道，从多个固态驱动的第一边缘延伸到固态驱动的第二边缘，所述多个冷却通道中的冷却通道由所述衬底、盖、第一组所述多个半导体器件和第二组所述多个半导体器件限定，所述多个冷却通道配置为接收冷却流体，以从所述多个半导体器件移除热量；以及
流体管，在垂直于所述衬底的方向上延伸穿过所述固态驱动的外部表面至与所述多个冷却通道连通。
9.如权利要求8所述的固态驱动，其中所述第一组和第二组的半导体器件形成在所述固态驱动的相对边缘之间延伸的一对相邻行或列。
10.如权利要求9所述的固态驱动，其中所述衬底是柔性的以与所述多个半导体器件的表面的可变高度耦接。
11.如权利要求8所述的固态驱动，其中所述流体管连接到一个或多个负压力源，以通过所述流体管从所述固态驱动抽出流体。
12.如权利要求11所述的固态驱动，其中所述一个或多个负压力源在所述流体管之上施加统一的压力。
13.如权利要求11所述的固态驱动，其中所述一个或多个负压力源包括至少第一和第二压力源，所述第一和第二压力源在所述流体管上运用不同的压力。
14.如权利要求8所述的固态驱动，其中所述盖直接贴附到所述多个半导体器件的第二表面。
15.如权利要求8所述的固态驱动，其中所述盖在所述多个半导体器件的第二表面上支撑，并且与所述多个半导体器件的第二表面间隔开。
16.一种固态驱动，包括：
衬底，包括多个接触衬垫；
多个半导体器件，耦接到所述衬底，并且排列为半导体器件的间隔开的行或列中的至少一者；
多个电气地导电的凸点，在所述多个半导体器件的表面上，其中所述多个接触衬垫以与所述多个电气地导电的凸点匹配的方式耦接到所述多个电气地导电的凸点；
多个冷却通道，由所述半导体器件的间隔开的行或列的至少一者限定，所述多个冷却通道被配置为接收在冷却通道中流动的冷却流体，以从所述多个半导体器件移除热量；以及
流体管，所述流体管在垂直于所述衬底的方向上延伸穿过所述固态驱动的外部表面至与所述多个冷却通道连通。
17.如权利要求16所述的固态驱动，其中所述多个半导体器件物理地且电气地耦接到所述衬底。
18.如权利要求17所述的固态驱动，其中所述衬底是柔性的以与所述多个半导体器件的表面的可变高度耦接。
19.如权利要求16所述的固态驱动，还包括贴附到所述多个半导体器件的与耦接到所述衬底的表面相对的表面的盖。
20.如权利要求18所述的固态驱动，其中所述多个冷却通道中的冷却通道由所述衬底、盖和半导体器件的一对相邻行或列所界定。
21.如权利要求19所述的固态驱动，其中所述多个冷却通道中的冷却通道向围绕固态驱动的环境的开口。
22.如权利要求16所述的固态驱动，其中所述多个半导体器件包括具有半导体裸芯的3-D立方体。
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