CN109923682B - 半导体器件和包括该半导体器件的半导体器件封装 - Google Patents

半导体器件和包括该半导体器件的半导体器件封装 Download PDF

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CN109923682B
CN109923682B CN201780068543.9A CN201780068543A CN109923682B CN 109923682 B CN109923682 B CN 109923682B CN 201780068543 A CN201780068543 A CN 201780068543A CN 109923682 B CN109923682 B CN 109923682B
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layer
electrode
conductive semiconductor
semiconductor device
metal
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Chinese (zh)
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CN109923682A (zh
Inventor
成演准
姜基晩
金珉成
朴修益
李容京
李恩得
林显修
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Suzhou Liyu Semiconductor Co ltd
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Suzhou Lekin Semiconductor Co Ltd
LG Innotek Co Ltd
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Priority claimed from KR1020160145902A external-priority patent/KR102607885B1/ko
Priority claimed from KR1020160148887A external-priority patent/KR102577879B1/ko
Application filed by Suzhou Lekin Semiconductor Co Ltd, LG Innotek Co Ltd filed Critical Suzhou Lekin Semiconductor Co Ltd
Priority to CN202210379216.8A priority Critical patent/CN114725264B/zh
Priority to CN202210379245.4A priority patent/CN114725267B/zh
Publication of CN109923682A publication Critical patent/CN109923682A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/835—Reflective materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer

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CN201780068543.9A 2016-11-03 2017-11-03 半导体器件和包括该半导体器件的半导体器件封装 Active CN109923682B (zh)

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CN202210379216.8A CN114725264B (zh) 2016-11-03 2017-11-03 半导体器件和包括该半导体器件的半导体器件封装
CN202210379245.4A CN114725267B (zh) 2016-11-03 2017-11-03 半导体器件和包括该半导体器件的半导体器件封装

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KR1020160145902A KR102607885B1 (ko) 2016-11-03 2016-11-03 반도체 소자 및 이를 포함하는 반도체 소자 패키지
KR10-2016-0145902 2016-11-03
KR1020160148887A KR102577879B1 (ko) 2016-11-09 2016-11-09 반도체 소자 및 이를 포함하는 반도체 소자 패키지
KR10-2016-0148887 2016-11-09
PCT/KR2017/012403 WO2018084631A1 (ko) 2016-11-03 2017-11-03 반도체 소자 및 이를 포함하는 반도체 소자 패키지

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CN202210379245.4A Division CN114725267B (zh) 2016-11-03 2017-11-03 半导体器件和包括该半导体器件的半导体器件封装

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US (1) US10847676B2 (cg-RX-API-DMAC7.html)
EP (1) EP3537486A4 (cg-RX-API-DMAC7.html)
JP (2) JP7099726B2 (cg-RX-API-DMAC7.html)
CN (3) CN109923682B (cg-RX-API-DMAC7.html)
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KR102575569B1 (ko) * 2018-08-13 2023-09-07 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 반도체 소자
KR102827371B1 (ko) * 2019-10-01 2025-07-01 엘지전자 주식회사 마이크로 led를 이용한 디스플레이 장치 및 이의 제조 방법
US20220122838A1 (en) * 2020-10-21 2022-04-21 University Of South Carolina Approaches for Fabricating N-Polar AlxGa1-xN Templates for Electronic and Optoelectronic Devices
TW202510039A (zh) * 2023-08-16 2025-03-01 台亞半導體股份有限公司 發光二極體
CN117393680B (zh) * 2023-12-12 2024-04-12 江西兆驰半导体有限公司 一种倒装发光二极管芯片及其制备方法

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EP2383805A2 (en) * 2010-04-28 2011-11-02 LG Innotek Co., Ltd Light emitting device package and lighting system having the same
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JP2022153366A (ja) 2022-10-12
US20190259910A1 (en) 2019-08-22
CN114725264A (zh) 2022-07-08
JP7099726B2 (ja) 2022-07-12
EP3537486A1 (en) 2019-09-11
JP2019533908A (ja) 2019-11-21
EP3537486A4 (en) 2020-08-12
CN109923682A (zh) 2019-06-21
CN114725267B (zh) 2024-10-01
US10847676B2 (en) 2020-11-24
WO2018084631A1 (ko) 2018-05-11
CN114725264B (zh) 2025-03-25
CN114725267A (zh) 2022-07-08

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