CN109923363A - 具有非均匀绝热的热处理装置 - Google Patents

具有非均匀绝热的热处理装置 Download PDF

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CN109923363A
CN109923363A CN201780053146.4A CN201780053146A CN109923363A CN 109923363 A CN109923363 A CN 109923363A CN 201780053146 A CN201780053146 A CN 201780053146A CN 109923363 A CN109923363 A CN 109923363A
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insulating material
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insulation
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凯文·佩克
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Cantel Thermal Transmission Co ltd
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/06Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity heated without contact between combustion gases and charge; electrically heated
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30Details, accessories, or equipment peculiar to furnaces of these types
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27BFURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/30Details, accessories, or equipment peculiar to furnaces of these types
    • F27B9/36Arrangements of heating devices
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00Casings; Linings; Walls; Roofs
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00Casings; Linings; Walls; Roofs
    • F27D1/0003Linings or walls
    • F27D1/0033Linings or walls comprising heat shields, e.g. heat shieldsd
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    • H01ELECTRIC ELEMENTS
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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Abstract

一种用于对产品或多个产品进行热处理的热处理装置,所述热处理装置包括热处理腔,所述热处理腔具有相对的远端和至少一个可控加热区。至少一个缓冲区被布置在每个远端处,并且所述缓冲区和所述热处理腔的至少一个加热区形成具有内表面和外表面的加热元件组件。至少一层绝热材料位于所述加热元件组件的内表面与所述至少一个缓冲区和所述热处理腔的加热区之间,并且具有受控效率的所述至少一层绝热材料非均匀地施加在所述加热组件的轴向长度上。

Description

具有非均匀绝热的热处理装置
技术领域
本发明涉及一种具有改进的温度控制的用于对产品或多个产品进行热处理的热处理装置。
背景技术
由于各种原因,许多产品可能要在炉中经历热处理。例如,在半导体晶片制造中,半导体晶片经历热固化,并且在钢制造中,钢经历退火工艺,以使钢硬化。通常在半导体生产中,必须非常精确地控制温度,因为温度的微小变化能够影响产量,温度可能需要控制一段特定的时间,并且通常需要快速稳定温度,以便使制造工艺的下一步可以开始。因此,能够精确地控制热处理是必须的。
典型的热处理装置包括加热元件组件,该加热元件组件包括至少一个被布置在每个远端处的缓冲区和多个可控加热区。产品在加热区中进行处理,加热区通常被设计用以沿着它的轴向长度实现高度的热均匀性。缓冲区用于提供额外的能量,以补偿从热处理装置远端处的开口损失的热量。能够从成本和环境方面提高能效是非常重要的。能够找到热处理装置的例子,其中在整个组件上安装有高效绝热。这对于连续炉是有效的,但是它的缺点在于降低了热处理装置的最大冷却速度性能,这能够妨碍动态系统中的产量。当在整个元件组件上进行绝热改进以提高能量效率时,通常的情况是:中心区域中的冷却速度将会降低到不再能够维持工件的期望的冷却速度的程度。典型的方法是要么降低整体绝热效率以保持期望的工艺性能,要么降低所控制的冷却速度。因此,如果减少绝热,则仅进行最小程度的节能,并且如果绝热被最大化,则延长处理循环时间并且系统产量受到危害。因此,需要提高动态系统的效率,同时对动态冷却速度产生最小的影响。
发明内容
在冷却过程中,热能必须从系统中的工件中释放出来,并且经由通过加热元件组件的传导组合将热能传递到工件周围的气体中而进行耗散。在给定温度下可达到的最大冷却速度受到通过绝热系统的能量传递速度的限制。所选择的受控速度通常比系统的最大速度稍慢,以确保有足够的净空,使得在考虑到包括有从加热元件组件到组件的差异的系统参数的微小变化的情况下,获得具有可重复的、受控的冷却工艺。在冷却阶段期间,端部区域通常继续以更高的功率水平运行,因为它们仍然用于提供额外的热量,以补偿损失,而中心区域仅提供足够使工件以期望的速度冷却的功率,因此中心区域冷却速度成为最大冷却速度的限制因素。
典型的三区热处理炉在产品加热时在中心区域的功耗在30-70%的范围内,而缓冲区在加热时可以以35-90%的功耗操作。一旦系统稳定在处理温度下,则中心区域的功耗降至约30%,以维持期望温度,而缓冲区将继续以40-80%运行,以补偿增加的热量损失。在起作用的处理循环结束时,必须将工件冷却到适合从炉组件中取出的温度。通常期望的是:至少通过初始阶段以受控速度和均匀温度将工件的温度降低。
沿着加热元件组件的轴向长度非均匀地施加绝热材料(其中,端部区域处的绝热被最大化并且被布置在加热元件组件的中心部处的绝热被标准化,以实现期望的冷却速度),而不是提高热处理腔的整个长度的绝热,将会降低整体能量消耗,而不会影响系统的产量。此外,由于加热元件组件的端部区域要求较低的运行功率,因此加热元件组件的使用寿命增加。
本发明的一个方面是解决或至少减少上述的问题和缺点。因此,本发明提供了一种用于对产品或多个产品进行热处理的热处理装置,所述热处理装置包括热处理腔,所述热处理腔具有相对的远端和至少一个可控加热区。至少一个被布置的缓冲区处在每个远端处,并且缓冲区和热处理腔的至少一个加热区形成具有内表面和外表面的加热元件组件。沿着所述至少一个缓冲区和热处理腔的加热区布置有至少一层绝热材料并且所述至少一层绝热材料形成加热元件组件的一部分,并且具有受控效率的所述至少一层绝热材料非均匀地施加在加热组件的轴向长度上。
根据一个实施例,位于所述至少一个缓冲区处的所述至少一层绝热材料的一部分具有最大效率,并且位于加热区处的所述至少一层绝热材料的一部分具有较低的效率,以实现期望的冷却速度。
根据一个实施例,通过改变绝热材料层的厚度来控制绝热材料。
根据一个实施例,通过使用具有不同导热等级的绝热材料来控制绝热材料的效率。
根据一个实施例,通过使用不同布置的多层绝热材料来控制绝热材料的效率。
根据一个实施例,多层能够具有相同的厚度。
据一个实施例,多层具有不同的厚度。
根据一个实施例,至少一个层的厚度沿着处理腔的长度变化。
根据一个实施例,所述至少一个加热区处的至少一个层的厚度小于所述至少一个缓冲区处的层的厚度。
根据一个实施例,绝热材料具有至少一个第一绝热部和一第二绝热部,其中所述至少一个绝热部中的绝热材料不同于第二绝热部中的材料。
根据一个实施例,围绕加热元件组件的外表面布置有外壳。
当结合附图阅读时,将会更好地理解前述发明内容以及实施例的以下详细描述。应该理解的是,所描绘的实施例不限于所示的精确布置和手段。
附图说明
图1是热处理装置的立体图。
图2是热处理腔的截面图。
图3是具有非均匀绝热的热处理腔的截面图。
具体实施方式
参照图1-3,用于对产品或多个产品进行热处理的热处理装置10包括热处理腔12。待处理的产品可包括半导体晶片,例如用于半导体晶片的固化或掺杂,或者用于钢的退火。
如图2中所示,腔12具有位于腔的中心部的可控加热区14。应该理解的是,加热区14能够是单个或多个加热区(14′-14″′)。腔12具有外表面24和远端的、相对的端部18、20。至少一个缓冲区16被布置在腔12的每个远端18、20处。热处理腔12的缓冲区16和加热区14一起形成加热元件组件22。热处理腔12和加热元件组件22能够是基本上圆柱形的。
参照图2和3,加热组件22包括绝热材料层28和34。绝热材料能够具有如本文进一步描述的受控效率。绝热材料层34位于处理腔12的外表面24和外层28的内表面26之间。因此,加热组件22具有绝热内层34和绝热外层28。应当理解的是,能够在加热组件22中提供单个或多个层。
如图3中所示,外壳30可以围绕加热元件组件22的外层28布置。绝热材料层,例如层34能够非均匀地施加在加热组件的长度上。非均匀意味着具有:具有相同或不同导热等级的一层或多层材料;具有相同或不同厚度的一层或多层;具有沿长度变化的不同厚度或不同等级导热率的层;具有不同材料的一层或多层,所述材料沿着长度并排具有不同的导热等级;通过使用具有不同导热等级的绝热材料、通过使用不同布置的多层绝热材料而具有相同或不同厚度的不同部分;以及所有这些的组合。
如图2中所示,施加到加热组件的绝热层能够具有:在缓冲区16中的具有最大效率的第一绝热部38;以及能够施加在加热区14中的具有较低效率的第二绝热部40,以达到理想的冷却速度。应当理解的是,尽管仅示出了两个并排的绝热部,但是取决于加热区和缓冲区,能够在不同的位置处放置许多不同的绝热部,以形成如上所述的非均匀绝热层。
再次参见图3,绝热材料34能够具有多于一层。例如,绝热材料34能够具有多个层36和37。应当理解的是,尽管示出了两个层,但是能够提供多个层。层36和37能够具有相同或不同的厚度。而且,每个层能够具有相同的厚度或沿组件长度变化的厚度。例如,绝热材料34的层36能够在加热区(多个加热区)14处和第二绝热部40处具有厚度,所述厚度小于层36在第一绝热部38处的厚度。因此,例如但不限于,绝热的效率能够通过以下手段来控制:如上所述,改变绝热的厚度、导热等级,或者沿着处理腔12的轴向长度以任何组合方式改变多层绝热材料的布置。
热处理装置能够是任何种类的多区域冷却处理,并且能够用于具有流体冷却系统的水平热处理腔以及垂直腔。
尽管已经关于特定方面描述了本发明的实施例,但是对于本领域技术人员而言,许多其它变型和改型以及其它用途将变得显而易见。因此,优选的是,本发明的实施例不受本文的具体公开内容的限制,而是仅受所附权利要求书的限制。

Claims (11)

1.一种用于对产品或多个产品进行热处理的热处理装置(10),所述装置包括:
热处理腔,所述热处理腔具有相对的远端和至少一个可控加热区;
至少一个缓冲区,所述至少一个缓冲区被布置在每个所述远端处,所述缓冲区和所述热处理腔的至少一个加热区形成具有内表面和外表面的加热元件组件;以及
至少一层绝热材料,所述至少一层绝热材料沿着所述至少一个缓冲区和所述热处理腔的所述加热区布置并且形成所述加热元件组件的一部分,并且具有受控效率的所述至少一层绝热材料非均匀地施加在所述加热组件的轴向长度上。
2.根据权利要求1所述的热处理装置(10),其特征在于,位于所述至少一个缓冲区处的所述至少一层绝热材料的一部分具有最大效率,并且位于所述加热区处的所述至少一层绝热材料的一部分具有较低的效率,以达到所需的冷却速度。
3.根据前述权利要求中的任一项所述的热处理装置(10),其特征在于,通过改变所述绝热材料层的厚度来控制所述绝热材料的所述效率。
4.根据权利要求1-3中的任一项所述的热处理装置(10),其特征在于,通过使用具有不同导热等级的绝热材料来控制所述绝热材料的所述效率。
5.根据权利要求1-3中的任一项所述的热处理装置(10),其特征在于,通过使用不同布置的多层绝热材料来控制所述绝热材料的所述效率。
6.根据前述权利要求中的任一项所述的热处理装置(10),其特征在于,所述多层具有相同的厚度。
7.根据权利要求5-6中的任一项所述的热处理装置(10),其特征在于,所述多层具有不同的厚度。
8.根据权利要求5-7中的任一项所述的热处理装置(10),其特征在于,至少一个所述层的所述厚度沿着所述处理腔的长度而变化。
9.根据前述权利要求中的任一项所述的热处理装置(10),其特征在于,位于所述至少一个加热区处的至少一个层的厚度小于位于所述至少一个缓冲区处的层的厚度。
10.根据前述权利要求中的任一项所述的热处理装置(10),其特征在于,所述绝热材料具有至少一个第一绝热部和一第二绝热部,其中所述至少一个绝热部中的所述绝热材料不同于所述第二绝热部中的材料。
11.根据前述权利要求中的任一项所述的热处理装置(10),其特征在于,外壳围绕所述加热元件组件的所述外表面设置。
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Families Citing this family (2)

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Publication number Priority date Publication date Assignee Title
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651240A (en) * 1969-01-31 1972-03-21 Trw Inc Heat transfer device
WO2010068703A1 (en) * 2008-12-12 2010-06-17 Solopower, Inc. Reactor to form solar cell absorbers
CN201852439U (zh) * 2010-11-05 2011-06-01 黄喜锤 一种电磁感应熔炼炉
CN204757682U (zh) * 2015-07-01 2015-11-11 皮洛特·白乐礼·西奥 一种窑炉
CN105737598A (zh) * 2016-03-07 2016-07-06 苏州新凌电炉有限公司 一种高效率辊道窑炉

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1416726A (en) * 1921-07-18 1922-05-23 Champion Ignition Co Burning ceramic wares and apparatus therefor
JPS5099963A (zh) * 1974-01-09 1975-08-08
US4849608A (en) 1987-02-14 1989-07-18 Dainippon Screen Mfg. Co., Ltd. Apparatus for heat-treating wafers
JP2676083B2 (ja) * 1988-01-28 1997-11-12 東京エレクトロン株式会社 加熱炉
US5038019A (en) * 1990-02-06 1991-08-06 Thermtec, Inc. High temperature diffusion furnace
JP3687902B2 (ja) * 2001-09-05 2005-08-24 大学共同利用機関法人自然科学研究機構 連続焼成炉及びそれを用いた焼成体の製造方法
US6807220B1 (en) 2003-05-23 2004-10-19 Mrl Industries Retention mechanism for heating coil of high temperature diffusion furnace
EP1632108A4 (en) 2003-06-11 2009-01-07 Huntington Alloys Corp OVEN WITH SEVERAL HEATING ZONES AND METHOD FOR THE CHARGE REDUCTION FOR SUPER ALLOYS
US7413592B2 (en) * 2004-03-31 2008-08-19 Nu-Iron Technology, Llc Linear hearth furnace system and methods regarding same
PL1662219T3 (pl) * 2004-08-04 2009-02-27 Ibiden Co Ltd Piec do wypalania oraz sposób wytwarzania w nim porowatego elementu ceramicznego
US20100226629A1 (en) * 2008-07-21 2010-09-09 Solopower, Inc. Roll-to-roll processing and tools for thin film solar cell manufacturing
US8199193B2 (en) * 2008-10-30 2012-06-12 Caskol, Llc Video camera inspection system for roller hearth heat treating furnaces and the like
US10204806B2 (en) 2011-09-06 2019-02-12 Arsalan Emami Modular heater
US9171746B2 (en) 2011-09-06 2015-10-27 Arsalan Emami Heater elements with enhanced cooling
US8816252B2 (en) * 2011-11-22 2014-08-26 Corning Incorporated Methods and apparatus for localized heating and deformation of glass sheets

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3651240A (en) * 1969-01-31 1972-03-21 Trw Inc Heat transfer device
WO2010068703A1 (en) * 2008-12-12 2010-06-17 Solopower, Inc. Reactor to form solar cell absorbers
CN201852439U (zh) * 2010-11-05 2011-06-01 黄喜锤 一种电磁感应熔炼炉
CN204757682U (zh) * 2015-07-01 2015-11-11 皮洛特·白乐礼·西奥 一种窑炉
CN105737598A (zh) * 2016-03-07 2016-07-06 苏州新凌电炉有限公司 一种高效率辊道窑炉

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