CN109725501B - 两面曝光装置 - Google Patents

两面曝光装置 Download PDF

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Publication number
CN109725501B
CN109725501B CN201811284435.8A CN201811284435A CN109725501B CN 109725501 B CN109725501 B CN 109725501B CN 201811284435 A CN201811284435 A CN 201811284435A CN 109725501 B CN109725501 B CN 109725501B
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CN
China
Prior art keywords
mask
substrate
calibration
camera
mark
Prior art date
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Active
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CN201811284435.8A
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English (en)
Chinese (zh)
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CN109725501A (zh
Inventor
名古屋淳
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aditech Engineering Co ltd
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Aditech Engineering Co ltd
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Publication of CN109725501A publication Critical patent/CN109725501A/zh
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • G03F7/2022Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2032Simultaneous exposure of the front side and the backside
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Separation By Low-Temperature Treatments (AREA)
CN201811284435.8A 2017-10-31 2018-10-31 两面曝光装置 Active CN109725501B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017210651A JP7412872B2 (ja) 2017-10-31 2017-10-31 両面露光装置
JP2017-210651 2017-10-31

Publications (2)

Publication Number Publication Date
CN109725501A CN109725501A (zh) 2019-05-07
CN109725501B true CN109725501B (zh) 2023-06-30

Family

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CN201811284435.8A Active CN109725501B (zh) 2017-10-31 2018-10-31 两面曝光装置

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JP (2) JP7412872B2 (https=)
KR (1) KR102603530B1 (https=)
CN (1) CN109725501B (https=)
TW (2) TWI844141B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6994806B2 (ja) * 2017-10-31 2022-01-14 株式会社アドテックエンジニアリング 両面露光装置及び両面露光方法
JP2021033018A (ja) * 2019-08-22 2021-03-01 大日本印刷株式会社 露光方法及び露光方法を備える蒸着マスク製造方法並びに露光装置
JP7458950B2 (ja) * 2020-09-23 2024-04-01 株式会社Screenホールディングス 描画システム

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置
JP5997409B1 (ja) * 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法

Family Cites Families (20)

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Publication number Priority date Publication date Assignee Title
JP3034273B2 (ja) * 1989-10-07 2000-04-17 株式会社東芝 露光方法及び露光装置
JP2600027B2 (ja) * 1991-05-16 1997-04-16 日立テクノエンジニアリング株式会社 画像位置合わせ方法およびその装置
JPH08181062A (ja) * 1994-12-22 1996-07-12 Nikon Corp 位置決め装置及び位置決め方法
JPH1022201A (ja) * 1996-07-04 1998-01-23 Nikon Corp アライメントマーク検出装置
JPH1154407A (ja) * 1997-08-05 1999-02-26 Nikon Corp 位置合わせ方法
JP2000099159A (ja) * 1998-09-18 2000-04-07 Orc Mfg Co Ltd ワークとマスクの整合機構および整合方法
JP3316676B2 (ja) * 1998-09-18 2002-08-19 株式会社オーク製作所 ワークとマスクの整合機構および整合方法
JP2000155430A (ja) 1998-11-24 2000-06-06 Nsk Ltd 両面露光装置における自動アライメント方法
JP2000305274A (ja) * 1999-04-20 2000-11-02 Ushio Inc 露光装置
JP3376961B2 (ja) * 1999-06-08 2003-02-17 ウシオ電機株式会社 マスクを移動させて位置合わせを行う露光装置
JP2004279166A (ja) * 2003-03-14 2004-10-07 Canon Inc 位置検出装置
JP4218418B2 (ja) * 2003-05-23 2009-02-04 ウシオ電機株式会社 帯状ワークの両面投影露光装置
WO2005116577A1 (ja) * 2004-05-28 2005-12-08 Nikon Corporation 結像光学系の調整方法、結像装置、位置ずれ検出装置、マ-ク識別装置及びエッジ位置検出装置
JP2006278648A (ja) 2005-03-29 2006-10-12 Nsk Ltd 両面露光方法
JP5117672B2 (ja) * 2005-10-25 2013-01-16 サンエー技研株式会社 露光方法及び露光装置
JP5538048B2 (ja) * 2010-04-22 2014-07-02 日東電工株式会社 アライメントマークの検出方法および配線回路基板の製造方法
JP2012234021A (ja) * 2011-04-28 2012-11-29 Hitachi High-Technologies Corp プロキシミティ露光装置、プロキシミティ露光装置のアライメント方法、及び表示用パネル基板の製造方法
JP2012243987A (ja) * 2011-05-20 2012-12-10 Renesas Electronics Corp 半導体装置の製造方法
JP2016180868A (ja) * 2015-03-24 2016-10-13 富士フイルム株式会社 露光用治具および露光方法
CN109375475A (zh) * 2015-11-30 2019-02-22 株式会社尼康 基板处理方法以及元件制造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006084783A (ja) * 2004-09-16 2006-03-30 Nsk Ltd 両面露光装置のマスクアライメント方法及びマスクアライメント装置
JP5997409B1 (ja) * 2016-05-26 2016-09-28 株式会社 ベアック 両面露光装置及び両面露光装置におけるマスクとワークとの位置合わせ方法

Also Published As

Publication number Publication date
JP2023014353A (ja) 2023-01-26
JP2019082611A (ja) 2019-05-30
TW201923485A (zh) 2019-06-16
TWI844141B (zh) 2024-06-01
JP7430768B2 (ja) 2024-02-13
KR102603530B1 (ko) 2023-11-17
CN109725501A (zh) 2019-05-07
TW202307590A (zh) 2023-02-16
JP7412872B2 (ja) 2024-01-15
KR20190049562A (ko) 2019-05-09
TWI782124B (zh) 2022-11-01

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