CN109698608A - A kind of switching device and its control method of use - Google Patents
A kind of switching device and its control method of use Download PDFInfo
- Publication number
- CN109698608A CN109698608A CN201811567880.5A CN201811567880A CN109698608A CN 109698608 A CN109698608 A CN 109698608A CN 201811567880 A CN201811567880 A CN 201811567880A CN 109698608 A CN109698608 A CN 109698608A
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- CN
- China
- Prior art keywords
- pipe
- switching device
- mosfet pipe
- igbt
- mosfet
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The present invention relates to a kind of switching devices, are connected including MOSFET pipe in parallel and IGBT pipe, the drain electrode of MOSFET pipe with the collector of IGBT pipe, the source electrode of MOSFET pipe is connected with the emitter of IGBT pipe.MOSFET pipe is silicon carbide MOSFET pipe.The present invention solves the defects of high-voltage large current application semiconductor switch device high frequency behind efficiency is low and at high cost, and product cost can be greatly reduced and improve product efficiency.
Description
Technical field
The invention belongs to power electronics, power supply industry, and in particular to a kind of switching device.
Background technique
Silicon carbide MOSFET switching speed is fast, open with shutdown energy loss it is few, especially suitable under high voltage applications
High-frequency operation.But silicon carbide MOSFET there are production technology it is complicated caused by it is with high costs, and be connected in high current
The disadvantages of big is lost.Although IGBT can be worked at the same time in high current and high voltage applications occasion, the switch energy of IGBT is damaged
Lose big, the high occasion of unsuitable working frequency.Therefore, it is necessary to design a kind of occasion high suitable for working frequency, and switch damage
Consume lower switching device.
Summary of the invention
The object of the present invention is to provide a kind of occasion high suitable for working frequency, and the lower derailing switch of switching loss
Part.
In order to achieve the above objectives, the technical solution adopted by the present invention is that:
A kind of switching device, including MOSFET pipe and IGBT pipe in parallel, drain electrode and the IGBT pipe of the MOSFET pipe
Collector is connected, and the source electrode of the MOSFET pipe is connected with the emitter of the IGBT pipe.
The MOSFET pipe is silicon carbide MOSFET pipe.
The present invention also provides a kind of control method that above-mentioned switching device uses, the control methods are as follows: use controlling party
Formula 1 or control mode 2 realize the switch control to the switching device；
The control mode 1 are as follows: when opening the switching device, to the grid of the MOSFET pipe to source electrode and described
The base stage of IGBT pipe applies high potential simultaneously to emitter, until the MOSFET pipe is completely on state and described
IGBT pipe enters saturation conduction state；When turning off the switching device, first the base stage of the IGBT pipe applies emitter
Low potential or negative potential turn off the IGBT pipe, after one section of turn-off delay time Ts, then to the MOSFET pipe
Grid, which applies low potential or negative potential to source electrode, turns off the MOSFET pipe；
The control mode 2 are as follows: when opening the switching device, first the grid of the MOSFET pipe applies source electrode positive
Driving voltage applies forward driving electricity to emitter after one section of open time delay Tr, then to the base stage of the IGBT pipe
Pressure, until the MOSFET pipe enters saturation conduction state completely on state and the IGBT pipe；Described in shutdown
When switching device, first applying 0 current potential or negative potential to emitter to the base stage of the IGBT pipe turns off the IGBT pipe, warp
After crossing one section of turn-off delay time Ts, then the grid of the MOSFET pipe makes source electrode 0 current potential of application or negative potential described
The shutdown of MOSFET pipe.
The open time delay Tr, the turn-off delay time Ts are nanosecond to Microsecond grade.
Due to the above technical solutions, the present invention has the following advantages over the prior art: the present invention solves height
The defects of voltage high-current application semiconductor switch device high frequency behind efficiency is low and at high cost, can be greatly reduced product at
Sheet and raising product efficiency.
Detailed description of the invention
Attached drawing 1 is the circuit diagram of switching device of the invention.
Specific embodiment
The invention will be further described for embodiment shown in reference to the accompanying drawing.
Embodiment one: as shown in Fig. 1, a kind of switching device, MOSFET pipe Q1 and IGBT the pipe Q2 including parallel connection,
The drain electrode of MOSFET pipe Q1 and the collector of IGBT pipe Q2 are connected to form a connecting pin of the switching device, MOSFET pipe Q1
Source electrode and the emitter of IGBT pipe Q2 be connected to form another connecting pin of the switching device.Wherein, MOSFET pipe Q1 is
Silicon carbide MOSFET pipe Q1.
The control method that above-mentioned switching device uses are as follows: realized using control mode 1 or control mode 2 to switching device
Switch control.
Control mode 1 are as follows: when opening switching device, to the grid of MOSFET pipe Q1 to the base of source electrode and IGBT pipe Q2
High potential extremely is applied simultaneously to emitter, until MOSFET pipe Q1 enters saturation and lead completely on state and IGBT pipe Q2
Logical state；When turning off switching device, first applying low potential or negative potential to emitter to the base stage of IGBT pipe Q2 makes IGBT
Pipe Q2 shutdown after one section of turn-off delay time Ts, then applies low potential to source electrode to the grid of MOSFET pipe Q1 or bears
Current potential turns off MOSFET pipe Q1.
The opening process of switching device be divided into 5 sections: T1 moment to silicon carbide MOSFET pipe Q1 G_S(grid to source level) with
And the G_E(base stage of IGBT pipe Q2 is to emitter) apply high potential simultaneously.The T2 moment is because silicon carbide MOSFET pipe Q1 has less
Parasitic capacitance and very short delay service time and rising time, therefore silicon carbide MOSFET pipe Q1 takes the lead in entering conductive mould
Formula.T3 moment silicon carbide MOSFET pipe Q1 also not completely on state when, IGBT pipe Q2 enter magnifying state and with carbonization
Silicon MOSFET pipe Q1 shares electric current together.T4 moment silicon carbide MOSFET pipe Q1 is completely on state, IGBT pipe Q2 current collection
Pole and emitter both end voltage are carbonized silicon MOSFET pipe Q1 clamper, although IGBT pipe Q2 does not enter saturation conduction state at this time,
But emitter both end voltage is very low, so when can approximately think IGBT pipe Q2 without turn-on consumption.T5 moment IGBT pipe Q2
Into saturation conduction state, silicon carbide MOSFET pipe Q1 and the common share current of IGBT pipe Q2.
The turn off process of switching device was divided into for 2 sections: T6 moment to the G_E(base stage of IGBT pipe Q2 to emitter) apply low electricity
Position or negative potential turn off IGBT, and silicon carbide MOSFET pipe Q1 is also constantly on state, IGBT pipe Q2 collector at this time
It is carbonized silicon MOSFET pipe Q1 clamper with emitter both end voltage, it is same it is considered that approximately thinking the unrelated breakdown of IGBT pipe Q2
Consumption.The T7 moment is when the G_E(base stage to IGBT pipe Q2 is to emitter) apply and delays one section of shutdown after low potential or negative potential and prolong
Slow time Ts, to the G_S(grid of silicon carbide MOSFET pipe Q1 to source level) apply low potential or negative potential and makes silicon carbide
MOSFET pipe Q1 shutdown (Ts be usually nanosecond to Microsecond grade), so that entire switching process be made there was only silicon carbide MOSFET pipe Q1's
Switching loss, IGBT approximately think no switching loss, because IGBT conduction voltage drop is low to bear most of electric current, therefore damage are connected
Consumption is also reduced.
Control mode 2 are as follows: when opening switching device, forward driving electricity first is applied to source electrode to the grid of MOSFET pipe Q1
Pressure applies positive drive voltage to emitter after one section of open time delay Tr, then to the base stage of IGBT pipe Q2, until
MOSFET pipe Q1 enters saturation conduction state completely on state and IGBT pipe Q2；It is first right when turning off switching device
The base stage of IGBT pipe Q2, which applies 0 current potential or negative potential to emitter, turns off IGBT pipe Q2, by one section of turn-off delay time
After Ts, then applying 0 current potential or negative potential to source electrode to the grid of MOSFET pipe Q1 turns off MOSFET pipe Q1.
The opening process of switching device be divided into 3 sections: T1 moment to silicon carbide MOSFET pipe Q1 G_S(grid to source level) apply
Add positive driving voltage, the T2 moment is after postponing one section of open time delay Tr to the G_E(base stage of IGBT pipe Q2 to transmitting
Pole) apply positive driving voltage (Tr be usually nanosecond to Microsecond grade), IGBT pipe Q2 is in silicon carbide MOSFET pipe Q1 amplification
The length for depending entirely on open time delay Tr is opened under state or fully on state, but can be equally approximately considered
IGBT pipe Q2 is without turn-on consumption.T3 moment IGBT pipe Q2 enters saturation conduction state, silicon carbide MOSFET pipe Q1 and IGBT pipe Q2
Common share current.
The turn off process of switching device was divided into for 2 sections: T6 moment to the G_E(base stage of IGBT pipe Q2 to emitter) apply 0 electricity
Position or negative potential turn off IGBT pipe Q2, and silicon carbide MOSFET pipe Q1 is also constantly on state, IGBT pipe Q2 collection at this time
Electrode and emitter both end voltage are carbonized silicon MOSFET pipe Q1 clamper, same it is considered that approximately thinking that IGBT pipe Q2 is unrelated
Breakdown consumption.The T7 moment is when the G_E(base stage to IGBT pipe Q2 is to emitter) apply 0 current potential or negative potential and turn off IGBT after prolong
When one section of turn-off delay time Ts after, to the G_S(grid of silicon carbide MOSFET pipe Q1 to source level) apply 0 current potential or negative potential
Make silicon carbide MOSFET pipe Q1 shutdown (Ts be usually nanosecond to Microsecond grade).This control mode can equally reach control mode 1
Effect, make entire switching process only have silicon carbide MOSFET pipe Q1 switching loss and low conduction loss.
To sum up, it is low to solve high-voltage large current application semiconductor switch device high frequency behind efficiency for the technical program
And the defects of at high cost, product cost can be greatly reduced and improve product efficiency, be higher than especially suitable for system input voltage
MPPT boosting and inverter circuit in the photovoltaic products of 1200V.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (4)
1. a kind of switching device, it is characterised in that: the switching device includes that MOSFET pipe and IGBT in parallel are managed, described
The drain electrode of MOSFET pipe is connected with the collector of the IGBT pipe, the transmitting of the source electrode of the MOSFET pipe and the IGBT pipe
Pole is connected.
2. a kind of switching device according to claim 1, it is characterised in that: the MOSFET pipe is silicon carbide MOSFET
Pipe.
3. a kind of a kind of control method that switching device uses as described in claim 1, it is characterised in that: the control method
Are as follows: the switch control to the switching device is realized using control mode 1 or control mode 2；
The control mode 1 are as follows: when opening the switching device, to the grid of the MOSFET pipe to source electrode and described
The base stage of IGBT pipe applies high potential simultaneously to emitter, until the MOSFET pipe is completely on state and described
IGBT pipe enters saturation conduction state；When turning off the switching device, first the base stage of the IGBT pipe applies emitter
Low potential or negative potential turn off the IGBT pipe, after one section of turn-off delay time Ts, then to the MOSFET pipe
Grid, which applies low potential or negative potential to source electrode, turns off the MOSFET pipe；
The control mode 2 are as follows: when opening the switching device, first the grid of the MOSFET pipe applies source electrode positive
Driving voltage applies forward driving electricity to emitter after one section of open time delay Tr, then to the base stage of the IGBT pipe
Pressure, until the MOSFET pipe enters saturation conduction state completely on state and the IGBT pipe；Described in shutdown
When switching device, first applying 0 current potential or negative potential to emitter to the base stage of the IGBT pipe turns off the IGBT pipe, warp
After crossing one section of turn-off delay time Ts, then the grid of the MOSFET pipe makes source electrode 0 current potential of application or negative potential described
The shutdown of MOSFET pipe.
4. the control method that a kind of switching device according to claim 3 uses, it is characterised in that: described when opening delay
Between Tr, the turn-off delay time Ts be nanosecond to Microsecond grade.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811567880.5A CN109698608A (en) | 2018-12-21 | 2018-12-21 | A kind of switching device and its control method of use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811567880.5A CN109698608A (en) | 2018-12-21 | 2018-12-21 | A kind of switching device and its control method of use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109698608A true CN109698608A (en) | 2019-04-30 |
Family
ID=66231920
Family Applications (1)
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|---|---|---|---|
| CN201811567880.5A Pending CN109698608A (en) | 2018-12-21 | 2018-12-21 | A kind of switching device and its control method of use |
Country Status (1)
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| CN (1) | CN109698608A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI676355B (en) * | 2019-06-06 | 2019-11-01 | 台達電子工業股份有限公司 | Hybrid drive circuit |
| CN112054791A (en) * | 2019-06-06 | 2020-12-08 | 台达电子工业股份有限公司 | Hybrid drive circuit |
| WO2021217884A1 (en) * | 2020-04-30 | 2021-11-04 | 深圳威迈斯新能源股份有限公司 | Intelligent switch and driving delay adjustment method therefor |
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| CN104967349A (en) * | 2015-06-23 | 2015-10-07 | 四川蜀旺科技有限公司 | Circuit capable of reducing loss of switch transistor and driving schedule method |
| CN205544896U (en) * | 2016-01-29 | 2016-08-31 | 深圳科士达科技股份有限公司 | High -efficient siC MOSFET pipe - parallelly connected circuit multiple device of IGBT pipe |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI676355B (en) * | 2019-06-06 | 2019-11-01 | 台達電子工業股份有限公司 | Hybrid drive circuit |
| CN112054791A (en) * | 2019-06-06 | 2020-12-08 | 台达电子工业股份有限公司 | Hybrid drive circuit |
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| CN112054791B (en) * | 2019-06-06 | 2023-11-21 | 台达电子工业股份有限公司 | Hybrid driving circuit |
| WO2021217884A1 (en) * | 2020-04-30 | 2021-11-04 | 深圳威迈斯新能源股份有限公司 | Intelligent switch and driving delay adjustment method therefor |
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| TA01 | Transfer of patent application right |
Effective date of registration: 20200211 Address after: No. 90 Zijin Road, Suzhou High-tech Zone, Jiangsu Province, 215011 Applicant after: JIANGSU GOODWE POWER SUPPLY TECHNOLOGY CO., LTD. Applicant after: Goodway Power Technology (Guangde) Co., Ltd. Address before: 215163 Jiangsu city of Suzhou province high tech Zone of Kunlun Road No. 189 (city of science and Technology) Applicant before: JIANGSU GOODWE POWER SUPPLY TECHNOLOGY CO., LTD. Applicant before: Jiangsu Goodway Power Supply Technology Co., Ltd. Shenzhen Branch Applicant before: Goodway Power Technology (Guangde) Co., Ltd. |
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Application publication date: 20190430 |