CN203225654U - Synchronously interrupting circuit structure used for IGBT diode - Google Patents
Synchronously interrupting circuit structure used for IGBT diode Download PDFInfo
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- CN203225654U CN203225654U CN 201320262238 CN201320262238U CN203225654U CN 203225654 U CN203225654 U CN 203225654U CN 201320262238 CN201320262238 CN 201320262238 CN 201320262238 U CN201320262238 U CN 201320262238U CN 203225654 U CN203225654 U CN 203225654U
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Abstract
The utility model provides a synchronously interrupting circuit structure used for an IGBT diode. The synchronously interrupting circuit structure used for the IGBT diode is characterized in that the synchronously interrupting circuit structure used for the IGBT diode includes an IGBT, an MOSFET and a diode. The whole of the IGBT and the MOSFET connected in series is connected with the diode in parallel. A transmitting electrode of the IGBT is connected with a source electrode of the MOSFET. A collective electrode of the IGBT is connected with a cathode of the diode. A drain electrode of the MOSFET is connected with an anode electrode of the diode. By using the synchronously interrupting circuit structure used for the IGBT diode, the conduction of the IGBT diode can be effectively interrupted synchronously and switch loss of an IGBT circuit can be reduced substantially and indirectly. And conduction voltage drop increased to an IGBT passage is reduced to a negligibly small size. Working efficiency of a circuit can be improved substantially. Electromagnetic compatibility can be improved. And the cost is low and the complexity of the integral circuit and control is not increased.
Description
Technical field
The utility model relates to the power electric component combining structure, is the synchronous blocking circuit structure of a kind of IGBT body diode specifically.
Background technology
General IGBT(insulated gate bipolar transistor) so problem can occur in semi-conductive manufacturing: body diode is to colonize in High Speed I GBT to go up an intrinsic subsidiary diode, when promoting the switching speed of switching tube self significantly, the reverse resume speed of the body diode that it is subsidiary correspondence with it lowers, and the switching speed of IGBT self can correspondingly lower again when body rises the reverse resume speed of body diode.Both are conflicting, can not get both simultaneously.
The full-bridge circuit main circuit structure that conventional current transformer is made of IGBT as shown in Figure 1, (Fig. 1 only does simple declaration with a full-bridge circuit, and remaining half-bridge, three-phase bridge, the isostructural defective of Si Xiangqiao all are the same).
This circuit inevitably will make the body diode conducting of switching device and can bring a large amount of power losss and serious electromagnetic compatibility problem by the slower reverse resume speed of body diode in most workplaces.
The improvement organization plan of existing IGBT (the improvement structure of all switching tubes all is the same, only with the improvement of single switching tube explanation simple in structure) as shown in Figure 2.
IGBT is the high pressure main switch among Fig. 2, and institute's diode in series is the low pressure Schottky diode, and institute's diode connected in parallel is the high-voltage high-speed diode.The conducting that act as blocking-up IGBT body diode of low pressure Schottky diode, the reverse afterflow work that act as alternative IGBT body diode of high-voltage high-speed diode.Though the improvement of last figure has solved the reverse-recovery problems of IGBT body diode, because the conduction voltage drop of low pressure Schottky diode is bigger, will bring bigger conduction loss to circuit.
Summary of the invention
Technical problem to be solved in the utility model provides the synchronous blocking circuit structure of a kind of IGBT body diode, power loss and electromagnetic compatibility problem that elimination is brought by the body diode problem, simultaneously the technical staff can selector switch speed IGBT faster, and needn't go to consider the reverse resume speed of body diode.
The synchronous blocking circuit structure of described IGBT body diode, it is characterized in that: comprise IGBT pipe, MOSFET pipe, diode, comprise that described IGBT pipe constitutes the leading logical switch ways of connecting mutually with described MOSFET pipe, described diode is in parallel with described leading logical switch ways, be used for the reverse afterflow of switch ways, the emitter of wherein said IGBT pipe is connected with the source electrode of MOSFET pipe, the collector electrode of described IGBT pipe directly or indirectly is connected with the negative electrode of described diode, and the drain electrode of described MOSFET pipe directly or indirectly is connected with the anode of described diode.
The control utmost point of described IGBT pipe and the control of described MOSFET pipe are extremely connected directly or indirectly.
The grade of rated voltage of described IGBT pipe is higher than the grade of rated voltage of described MOSFET pipe.
As a kind of embodiment, be connected with the negative electrode of described diode after the collector series connection reactance of described IGBT pipe.
As another kind of embodiment, be connected with the anode of described diode after the reactance of the drain electrode of described MOSFET pipe serial connection.
Described IGBT pipe, MOSFET pipe, diode are respectively discrete devices or become one in chip independently separately.
The utility model both can efficient synchronization the conducting of blocking-up IGBT body diode, the switching loss that significantly reduces the IGBT circuit that again can be indirect, and the conduction voltage drop of increasing for the IGBT path is little of ignoring.Improved the operating efficiency of circuit greatly, improved electromagnetic compatibility problem, and cost is low, can not increase the complexity of integrated circuit and control.
Description of drawings
Fig. 1 is conventional full-bridge converter circuit arrangement,
Fig. 2 is the existing improvement circuit structure to IGBT,
Fig. 3 is the synchronous blocking circuit typical circuit of IGBT of the present utility model structure chart,
Fig. 4 is the circuit structure diagram of the synchronous blocking circuit embodiment one of IGBT of the present utility model,
Fig. 5 is the circuit structure diagram of the synchronous blocking circuit embodiment two of IGBT of the present utility model,
Fig. 6 is the circuit structure diagram of the synchronous blocking circuit embodiment three of IGBT of the present utility model.
Embodiment
The present invention is further described below in conjunction with accompanying drawing: as shown in Fig. 3～6, the synchronous blocking circuit structure of described IGBT body diode, it is characterized in that: comprise the IGBT pipe, the MOSFET pipe, diode, comprise that described IGBT pipe constitutes the leading logical switch ways of connecting mutually with described MOSFET pipe, described diode is in parallel with described leading logical switch ways, be used for the reverse afterflow of switch ways, the emitter of wherein said IGBT pipe is connected with the source electrode of MOSFET pipe, the collector electrode of described IGBT pipe directly or indirectly is connected with the negative electrode of described diode, and the drain electrode of described MOSFET pipe directly or indirectly is connected with the anode of described diode.Block the forward conduction of former switching tube body diode with the back-to-back low pressure Low ESR metal-oxide-semiconductor of connecting of switching tube, and the diode of a high speed in parallel substitutes the work of original body diode on the switching tube of two series connection.
As Fig. 3,4, the control utmost point of described IGBT pipe and the control of described MOSFET pipe are extremely connected directly or indirectly, as the driving control end with respect to described IGBT pipe emitter, also are simultaneously the driven in synchronism control ends with respect to the source electrode of described MOSFET pipe.
As Fig. 5, as a kind of embodiment, be connected with the negative electrode of described diode after the collector series connection reactance of described IGBT pipe.
As Fig. 6, as another kind of embodiment, be connected with the anode of described diode after the reactance of the drain electrode of described MOSFET pipe serial connection.
The grade of rated voltage of described IGBT pipe is higher than the grade of rated voltage (as prioritization scheme, described MOSFET pipe generally is that rated voltage is smaller or equal to the low pressure metal-oxide-semiconductor of 100V) of described MOSFET pipe.
With reference to figure 3, when the high level on the drive end G drives signal and arrives, low pressure metal-oxide-semiconductor Q2 will with injectron Q1 conducting simultaneously because the conduction impedance of low pressure metal-oxide-semiconductor is minimum, so almost do not bring conduction loss to circuit.When the high level signal on the drive end G transferred low level to, low pressure metal-oxide-semiconductor Q2 will turn-off simultaneously with injectron Q1, and at this moment low pressure metal-oxide-semiconductor Q2 can block the reverse freewheel current on the injectron Q1, made it all to flow to high-voltage high-speed diode D1.
The difference of the existing improvement project shown in the utility model and Fig. 2 is, change original low pressure Schottky diode into the low pressure metal-oxide-semiconductor, the drive end of low pressure metal-oxide-semiconductor is in parallel with the drive end of injectron, Synchronization Control that can 100%, do not go up the increase complexity to circuit and control, simultaneously because the conduction impedance of low pressure metal-oxide-semiconductor can be accomplished very low, and opening process and injectron are synchronous, so the conduction loss that metal-oxide-semiconductor brings for circuit integral body is very little, the whole efficiency of the great circuit that increases.
Claims (6)
1. synchronous blocking circuit structure of IGBT body diode, it is characterized in that: comprise IGBT pipe, MOSFET pipe, diode, comprise that described IGBT pipe constitutes the leading logical switch ways of connecting mutually with described MOSFET pipe, described diode is in parallel with described leading logical switch ways, be used for the reverse afterflow of switch ways, the emitter of wherein said IGBT pipe is connected with the source electrode of MOSFET pipe, the collector electrode of described IGBT pipe directly or indirectly is connected with the negative electrode of described diode, and the drain electrode of described MOSFET pipe directly or indirectly is connected with the anode of described diode.
2. the synchronous blocking circuit structure of IGBT body diode according to claim 1, it is characterized in that: the control utmost point of described IGBT pipe and the control of described MOSFET pipe are extremely connected directly or indirectly.
3. the synchronous blocking circuit structure of IGBT body diode according to claim 1 and 2, it is characterized in that: the grade of rated voltage of described IGBT pipe is greater than or equal to the grade of rated voltage of described MOSFET pipe.
4. the synchronous blocking circuit structure of IGBT body diode according to claim 1 and 2 is characterized in that: be connected with the negative electrode of described diode after the collector series connection reactance of described IGBT pipe.
5. the synchronous blocking circuit structure of IGBT body diode according to claim 1 and 2 is characterized in that: be connected with the anode of described diode after the drain electrode serial connection reactance of described MOSFET pipe.
6. the synchronous blocking circuit structure of IGBT body diode according to claim 1 and 2 is characterized in that: described IGBT pipe, MOSFET pipe, diode are respectively discrete devices or become one in chip independently separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320262238 CN203225654U (en) | 2013-05-14 | 2013-05-14 | Synchronously interrupting circuit structure used for IGBT diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320262238 CN203225654U (en) | 2013-05-14 | 2013-05-14 | Synchronously interrupting circuit structure used for IGBT diode |
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| CN203225654U true CN203225654U (en) | 2013-10-02 |
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| CN 201320262238 Expired - Fee Related CN203225654U (en) | 2013-05-14 | 2013-05-14 | Synchronously interrupting circuit structure used for IGBT diode |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162317A (en) * | 2014-06-09 | 2015-12-16 | 上海紫竹新兴产业技术研究院 | Performance improved circuit of power MOSFET switch |
| CN105702668A (en) * | 2016-03-03 | 2016-06-22 | 成都芯源系统有限公司 | Synchronous switching converter and integrated semiconductor switching device for synchronous switching converter |
| CN106936298A (en) * | 2017-03-15 | 2017-07-07 | 华为技术有限公司 | A kind of semiconductor devices, control method and current transformer |
| CN107623363A (en) * | 2017-09-13 | 2018-01-23 | 嘉善中正新能源科技有限公司 | A kind of consolidation circuit of DC/DC converters and Vehicular charger |
| CN108631635A (en) * | 2018-03-12 | 2018-10-09 | 江苏固德威电源科技股份有限公司 | Power electronic devices and use its single-phase converter, 3-phase power converter |
| WO2018196809A1 (en) * | 2017-04-26 | 2018-11-01 | Huawei Technologies Co., Ltd. | Hybrid power devices |
| US11695335B2 (en) * | 2017-09-22 | 2023-07-04 | Huawei Digital Power Technologies Co., Ltd. | Hybrid boost converters |
-
2013
- 2013-05-14 CN CN 201320262238 patent/CN203225654U/en not_active Expired - Fee Related
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162317A (en) * | 2014-06-09 | 2015-12-16 | 上海紫竹新兴产业技术研究院 | Performance improved circuit of power MOSFET switch |
| CN105702668A (en) * | 2016-03-03 | 2016-06-22 | 成都芯源系统有限公司 | Synchronous switching converter and integrated semiconductor switching device for synchronous switching converter |
| CN105702668B (en) * | 2016-03-03 | 2018-06-22 | 成都芯源系统有限公司 | Synchronous switching converter and integrated semiconductor switching device for synchronous switching converter |
| CN106936298A (en) * | 2017-03-15 | 2017-07-07 | 华为技术有限公司 | A kind of semiconductor devices, control method and current transformer |
| CN106936298B (en) * | 2017-03-15 | 2020-01-10 | 华为技术有限公司 | Semiconductor device, control method and converter |
| WO2018196809A1 (en) * | 2017-04-26 | 2018-11-01 | Huawei Technologies Co., Ltd. | Hybrid power devices |
| US10230364B2 (en) | 2017-04-26 | 2019-03-12 | Futurewei Technologies, Inc. | Hybrid power devices |
| US11025248B2 (en) | 2017-04-26 | 2021-06-01 | Futurewei Technologies, Inc. | Hybrid power devices |
| US11641201B2 (en) | 2017-04-26 | 2023-05-02 | Huawei Digital Power Technologies Co., Ltd. | Hybrid power devices |
| CN107623363A (en) * | 2017-09-13 | 2018-01-23 | 嘉善中正新能源科技有限公司 | A kind of consolidation circuit of DC/DC converters and Vehicular charger |
| US11695335B2 (en) * | 2017-09-22 | 2023-07-04 | Huawei Digital Power Technologies Co., Ltd. | Hybrid boost converters |
| CN108631635A (en) * | 2018-03-12 | 2018-10-09 | 江苏固德威电源科技股份有限公司 | Power electronic devices and use its single-phase converter, 3-phase power converter |
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| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131002 Termination date: 20150514 |
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| EXPY | Termination of patent right or utility model |