CN203352425U - Switch unit drive circuit with negative bias - Google Patents
Switch unit drive circuit with negative bias Download PDFInfo
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- CN203352425U CN203352425U CN 201320349273 CN201320349273U CN203352425U CN 203352425 U CN203352425 U CN 203352425U CN 201320349273 CN201320349273 CN 201320349273 CN 201320349273 U CN201320349273 U CN 201320349273U CN 203352425 U CN203352425 U CN 203352425U
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Abstract
The utility model provides a switch unit drive circuit with negative bias. The switch unit drive circuit comprises a control unit used for outputting conduction signals or cut-off signals to a full-bridge circuit; the full-bridge circuit used for converting direct current voltage signals into square wave voltage signals and outputting the square wave voltage signals to a pulse transformer when the conduction signals are received and outputting no signals when the cut-off signals are received; the pulse transformer having a primary winding and two secondary windings and used for converting the square wave voltage signals into two paths of identical narrow pulse voltage signals and sending the signals respectively to a first secondary-side drive unit and a second secondary-side drive unit; and the first secondary-side drive unit and the second secondary-side drive unit used for controlling a switch unit to be in a conduction state according to the narrow pulse voltage signals output by the pulse transformer and further used for controlling the switch unit to be in a negative bias cut-off state when the full-bridge circuit outputs no signals. The switch unit drive circuit with a simple structure can guarantee reliable conduction or cut-off of the switch unit and prevent the switch unit from suffering straight-through conditions.
Description
Technical field
The utility model relates to the drive circuit technical field, is specifically related to a kind of drive circuit of the switch element with back bias voltage.
Background technology
Along with the progress of digital technology, the application of DSP in welder system is more and more extensive, for example is used to IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) drive circuit provides the driving signal.But, at welder system, powering on, during the situation such as power down, DSP reset, emulation time-out, DSP can be uncontrolled, is easy to make IGBT to occur straight-through, and existing most of IGBT drive circuits are all protected without straight-through, and this can cause IGBT to be damaged because leading directly to.For fear of IGBT, occur to lead directly to, prior art usually adopts a plurality of logical devices to be protected IGBT, and the circuit of its composition is very complicated, and cost is higher.
And, existing most of IGBT drive circuits in interval, inversion dead band without back bias voltage, make the conducting of IGBT or end unreliable.
The utility model content
Technical problem to be solved in the utility model is for existing above-mentioned defect in prior art, a kind of drive circuit of the switch element with back bias voltage is provided, it is simple in structure, can guarantee the reliable conducting of switch element or cut-off, and it is straight-through to avoid switch element to occur.
Solve the technical scheme that the utility model technical problem adopts:
The described drive circuit of the switch element with back bias voltage comprises: control unit, full-bridge circuit, pulse transformer, the first secondary driver element and the second secondary driver element; Described pulse transformer comprises former limit winding and two secondary windings;
Described control unit is for exporting Continuity signal or pick-off signal to full-bridge circuit;
Described full-bridge circuit is connected with the former limit winding of DC power supply, pulse transformer respectively, for when receiving Continuity signal, the d. c. voltage signal of DC power supply output is converted to square wave voltage signal and exports pulse transformer to, and when receiving pick-off signal no-output;
Two secondary windings of described pulse transformer are connected with the first secondary driver element, the second secondary driver element respectively, described pulse transformer is used for converting described square wave voltage signal to burst pulse voltage signal that two-way is identical, and is sent to respectively the first secondary driver element and the second secondary driver element;
Described the first secondary driver element is connected with two pins of switch element, the second secondary driver element is connected with two other pin of switch element, described the first secondary driver element and the second secondary driver element for the burst pulse voltage signal control switch unit according to pulse transformer output in conducting state, and for controlling switch element in the back bias voltage cut-off state when the full-bridge circuit no-output.
Preferably, described full-bridge circuit comprises the first brachium pontis and the second brachium pontis in parallel, and the sys node of described the first brachium pontis and the second brachium pontis is connected with ground with the positive pole of DC power supply respectively; Described the first brachium pontis comprises switching tube Q1 and the switching tube Q3 of series connection, and described the second brachium pontis comprises switching tube Q2 and the switching tube Q4 of series connection; The series connection node of the series connection node of described switching tube Q1 and switching tube Q3, described switching tube Q2 and switching tube Q4 is connected with the two ends of the former limit of pulse transformer winding respectively.
Preferably, described switching tube Q1 all adopts triode to switching tube Q4.
Preferably, described switching tube Q1 and switching tube Q2 adopt respectively the P-channel enhancement type metal-oxide-semiconductor, and described switching tube Q3 and switching tube Q4 adopt respectively N channel enhancement metal-oxide-semiconductor.
Preferably, the drain electrode of the switching tube Q1 in described the first brachium pontis is connected with the positive pole of DC power supply, and source electrode is connected with the drain electrode of switching tube Q3, the source ground of described switching tube Q3; The drain electrode of switching tube Q2 in described the second brachium pontis is connected with the positive pole of DC power supply, and negative pole is connected with the drain electrode of switching tube Q4, the source ground of described switching tube Q4;
Described control unit is for respectively to the grid of the grid of switching tube Q1, the switching tube Q3 PWM_B that transmits control signal, respectively to the grid of the grid of switching tube Q2, the switching tube Q4 PWM_A that transmits control signal, and when described control signal PWM_B and control signal PWM_A are complementary low and high level, be control unit output Continuity signal to full-bridge circuit, when described control signal PWM_B and control signal PWM_A are all high level or are all low level, be control unit output pick-off signal to full-bridge circuit.
Preferably, described full-bridge circuit also comprises that resistance R 1 is to resistance R 8;
One end of described resistance R 1 is connected with the positive pole of DC power supply, the other end respectively with the drain electrode of switching tube Q1, the drain electrode of switching tube Q2 is connected, one end of described resistance R 2 is connected with the grid of switching tube Q1, the other end respectively with resistance R 4, one end of resistance R 6 is connected, the other end of described resistance R 4 is connected with the grid of switching tube Q3, the other end of described resistance R 6 respectively with resistance R 7, one end of resistance R 8 is connected, the other end of described resistance R 7 respectively with resistance R 3, one end of resistance R 5 is connected, the other end of described resistance R 3 is connected with the grid of switching tube Q2, the other end of described resistance R 5 is connected with the grid of switching tube Q4, the other end of described resistance R 8 respectively with the source electrode of switching tube Q4, ground is connected,
The control signal PWM_B that described control unit sends respectively through resistance R 2 enter switching tube Q1 grid, enter the grid of switching tube Q3 through resistance R 4; The control signal PWM_A that described control unit sends respectively through resistance R 3 enter switching tube Q2 grid, enter the grid of switching tube Q4 through resistance R 5.
Preferably, described switching tube Q1 and switching tube Q2 adopt respectively the P-channel enhancement type metal-oxide-semiconductor, and described switching tube Q3 and switching tube Q4 adopt respectively N channel enhancement metal-oxide-semiconductor.
Preferably, two of described pulse transformer secondary windings are respectively the first secondary winding and the second secondary winding;
Described the first secondary driver element comprises diode D1, diode D2, capacitor C 1 and voltage-stabiliser tube ZD5; The two ends of described capacitor C 1 are connected with the negative electrode of diode D1, the pin G1 of switch element respectively, the anode of described diode D1 is connected with the first end of the first secondary winding, described voltage-stabiliser tube ZD5 is in parallel with capacitor C 1, its negative electrode is connected with the negative electrode of diode D1, anode is connected with the pin G1 of switch element, and the negative electrode of described diode D2 is connected with the second end of the first secondary winding, anode is connected with the pin E1 of switch element;
Described the second secondary driver element comprises diode D3, diode D4, capacitor C 2 and voltage-stabiliser tube ZD6; The two ends of described capacitor C 2 are connected with the negative electrode of diode D3, the pin G2 of switch element respectively, the anode of described diode D3 is connected with the second end of the second secondary winding, described voltage-stabiliser tube ZD6 is in parallel with capacitor C 2, its negative electrode is connected with the negative electrode of diode D3, anode is connected with the pin G2 of switch element, and the negative electrode of described diode D4 is connected with the first end of the second secondary winding, anode is connected with the pin E2 of switch element;
The first end of the first end of described the first secondary winding and the second secondary winding is Same Name of Ends.
Preferably, described the first secondary driver element also comprises voltage-stabiliser tube ZD1, voltage-stabiliser tube ZD2 and resistance R 12; The negative electrode of described voltage-stabiliser tube ZD1 is connected with the pin G1 of switch element, anode is connected with the anode of voltage-stabiliser tube ZD2, the negative electrode of described voltage-stabiliser tube ZD2 is connected with the pin E1 of switch element, and the two ends of described resistance R 12 are connected with pin G1, the pin E1 of switch element respectively;
Described the second secondary driver element also comprises voltage-stabiliser tube ZD3, voltage-stabiliser tube ZD4 and resistance R 16; The negative electrode of described voltage-stabiliser tube ZD3 is connected with the pin G2 of switch element, anode is connected with the anode of voltage-stabiliser tube ZD4, the negative electrode of described voltage-stabiliser tube ZD4 is connected with the pin E2 of switch element, and the two ends of described resistance R 16 are connected with pin G2, the pin E2 of switch element respectively.
Preferably, described the first secondary driver element also comprises resistance R 9, resistance R 10, resistance R 11, resistance R 17, resistance R 19 and triode Q5, described resistance R 9 is in parallel with diode D1, the two ends of described resistance R 11 respectively with the anode of voltage-stabiliser tube ZD5, the pin G1 of switch element is connected, the two ends of described resistance R 19 respectively with the negative electrode of diode D2, the second end of the first secondary winding is connected, one end of described resistance R 10 is connected with the negative electrode of diode D1, the other end respectively with an end of resistance R 17, the negative electrode of diode D2 is connected, the other end of described resistance R 17 is connected with the base stage of triode Q5, the collector electrode of described triode Q5 is connected with the negative electrode of voltage-stabiliser tube ZD5, emitter is connected with the anode of diode D2,
Described the second secondary driver element also comprises resistance R 13, resistance R 14, resistance R 15, resistance R 18, resistance R 20 and triode Q6, described resistance R 13 is in parallel with diode D3, the two ends of described resistance R 15 respectively with the anode of voltage-stabiliser tube ZD6, the pin G2 of switch element is connected, the two ends of described resistance R 20 respectively with the negative electrode of diode D4, the first end of the second secondary winding is connected, one end of described resistance R 14 is connected with the negative electrode of diode D3, the other end respectively with an end of resistance R 18, the negative electrode of diode D4 is connected, the other end of described resistance R 18 is connected with the base stage of triode Q6, the collector electrode of described triode Q6 is connected with the negative electrode of voltage-stabiliser tube ZD6, emitter is connected with the anode of diode D4.
Beneficial effect:
1) it is straight-through that the full-bridge circuit that the drive circuit of the switch element with back bias voltage described in the utility model adopts can prevent that switch element (as IGBT) from occurring, therefore have straight-through defencive function;
2) capacitor C 1 in the first secondary driver element that the drive circuit of the switch element with back bias voltage described in the utility model adopts can guarantee that described drive circuit has back bias voltage in interval, inversion dead band, make the reliable conducting of switch element (as IGBT) or cut-off, the reliability while fully having guaranteed switch element work;
3) driving circuit structure of the switch element with back bias voltage described in the utility model is simple, is easy to application.
The accompanying drawing explanation
Fig. 1 is with the structural representation of the switch element drive circuit of back bias voltage in the utility model embodiment 1;
Fig. 2 is with the sequencing control figure of the IGBT drive circuit of back bias voltage in the utility model embodiment 2;
Fig. 3 is with the circuit theory schematic diagram of the IGBT drive circuit of back bias voltage in the utility model embodiment 2.
Embodiment
For making those skilled in the art understand better the technical solution of the utility model, below in conjunction with drawings and Examples, the drive circuit of the switch element with back bias voltage described in the utility model is described in further detail.
Embodiment 1:
As shown in Figure 1, the present embodiment provides a kind of drive circuit of the switch element with back bias voltage, comprising: control unit, full-bridge circuit, pulse transformer, the first secondary driver element and the second secondary driver element.Described pulse transformer comprises former limit winding and two secondary winding (not shown)s, and described two secondary windings are respectively the first secondary winding and the second secondary winding.
Described control unit is for exporting Continuity signal or pick-off signal to full-bridge circuit.Described control unit can adopt existing single-chip microcomputer or DSP.
Described full-bridge circuit is connected with the former limit winding of DC power supply, pulse transformer respectively, for when receiving Continuity signal, the d. c. voltage signal of DC power supply output is converted to the square wave voltage signal of certain or adjustable duty ratio and exports pulse transformer to, and when receiving pick-off signal no-output.
Preferably, described full-bridge circuit comprises the first brachium pontis and the second brachium pontis in parallel, and the sys node of described the first brachium pontis and the second brachium pontis is connected with ground with the positive pole of DC power supply respectively; Described the first brachium pontis comprises switching tube Q1 and the switching tube Q3 of series connection, and described the second brachium pontis comprises switching tube Q2 and the switching tube Q4 of series connection; The series connection node of the series connection node of described switching tube Q1 and switching tube Q3, described switching tube Q2 and switching tube Q4 is connected with the two ends of the former limit winding of pulse transformer respectively.
Preferably, described switching tube Q1 all adopts triode to switching tube Q4.Perhaps, described switching tube Q1 and switching tube Q2 adopt respectively the P-channel enhancement type metal-oxide-semiconductor, and described switching tube Q3 and switching tube Q4 adopt respectively N channel enhancement metal-oxide-semiconductor.
Preferably, the drain electrode of the switching tube Q1 in described the first brachium pontis is connected with the positive pole of DC power supply, and source electrode is connected with the drain electrode of switching tube Q3, the source ground of described switching tube Q3; The drain electrode of switching tube Q2 in described the second brachium pontis is connected with the positive pole of DC power supply, and negative pole is connected with the drain electrode of switching tube Q4, the source ground of described switching tube Q4; Described control unit is for respectively to the grid of the grid of switching tube Q1, the switching tube Q3 PWM_B that transmits control signal, respectively to the grid of the grid of switching tube Q2, the switching tube Q4 PWM_A that transmits control signal, and when described control signal PWM_B and control signal PWM_A are complementary low and high level, be control unit output Continuity signal to full-bridge circuit, when described control signal PWM_B and control signal PWM_A are all high level or are all low level, be control unit output pick-off signal to full-bridge circuit.
Two secondary windings of described pulse transformer are connected with the first secondary driver element, the second secondary driver element respectively, described pulse transformer is used for converting described square wave voltage signal to burst pulse voltage signal that two-way is identical, and is sent to respectively the first secondary driver element and the second secondary driver element.The antijamming capability of described pulse transformer is stronger, and it is arranged between full-bridge circuit and switch element the effect of also having played isolation.
Described the first secondary driver element is connected with two pins of switch element, the second secondary driver element is connected with two other pin of switch element, described the first secondary driver element and the second secondary driver element for the burst pulse voltage signal control switch unit according to pulse transformer output in conducting state, and for controlling switch element in the back bias voltage cut-off state when the full-bridge circuit no-output.
Preferably, described the first secondary driver element comprises diode D1, diode D2, capacitor C 1 and voltage-stabiliser tube ZD5; The two ends of described capacitor C 1 are connected with the negative electrode of diode D1, the pin G1 of switch element respectively, the anode of described diode D1 is connected with the first end of the first secondary winding, described voltage-stabiliser tube ZD5 is in parallel with capacitor C 1, its negative electrode is connected with the negative electrode of diode D1, anode is connected with the pin G1 of switch element, and the negative electrode of described diode D2 is connected with the second end of the first secondary winding, anode is connected with the pin E1 of switch element; Described the second secondary driver element comprises diode D3, diode D4, capacitor C 2 and voltage-stabiliser tube ZD6; The two ends of described capacitor C 2 are connected with the negative electrode of diode D3, the pin G2 of switch element respectively, the anode of described diode D3 is connected with the second end of the second secondary winding, described voltage-stabiliser tube ZD6 is in parallel with capacitor C 2, its negative electrode is connected with the negative electrode of diode D3, anode is connected with the pin G2 of switch element, and the negative electrode of described diode D4 is connected with the first end of the second secondary winding, anode is connected with the pin E2 of switch element; The first end of the first end of described the first secondary winding and the second secondary winding is Same Name of Ends.
Visible, when the control signal PWM_B that control unit sends to full-bridge circuit and control signal PWM_A are complementary low and high level, full-bridge circuit is converted to the d. c. voltage signal of DC power supply output square wave voltage signal and exports pulse transformer to, so that the first secondary driver element and the second secondary driver element control switch unit are in conducting state, and the control signal PWM_B sent to full-bridge circuit when control unit and control signal PWM_A are when being all high level or being all low level, the full-bridge circuit no-output, so that the first secondary driver element and the second secondary driver element control switch unit are in cut-off state, therefore full-bridge circuit can prevent that switch element from occurring to lead directly to.
And, in the burst pulse voltage signal that diode D1 in the first secondary driver element can send pulse transformer, negative part disappears, only stay positive part, by the capacitor C 1 in the first secondary driver element, the zero level translation in interval, drive circuit inversion dead band is got off respectively again, make its negative value with certain amplitude (this amplitude is determined by voltage-stabiliser tube ZD5), to guarantee switch element zero level without interval, inversion dead band in procedures of turn-off, but directly be pulled to the negative value of certain amplitude, and (comprising interval, inversion dead band) is always in negative driving condition (being that switch element is in the back bias voltage cut-off state) before next pulse arrives, opening by mistake of not only can preventing that the switch element shutdown moment from causing because dv/dt is too high is logical, improve driven switch element antijamming capability, can also reduce the collector electrode surge current, reduce the wastage.
In the present embodiment, described switch element can adopt mos field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET), the switching tube of insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) or other type.
Embodiment 2:
In the present embodiment, described switch element adopts IGBT.
As shown in Figure 3, the present embodiment provides a kind of drive circuit of the IGBT with back bias voltage, comprises control unit (not shown), full-bridge circuit, pulse transformer T1, the first secondary driver element and the second secondary driver element.
Described full-bridge circuit comprises that switching tube Q1 is to switching tube Q4 and resistance R 1 to resistance R 8.Described switching tube Q1 and switching tube Q2 adopt respectively the P-channel enhancement type metal-oxide-semiconductor, and described switching tube Q3 and switching tube Q4 adopt respectively N channel enhancement metal-oxide-semiconductor.
One end of described resistance R 1 is connected with the positive pole of DC power supply, the other end respectively with the drain electrode of switching tube Q1, the drain electrode of switching tube Q2 is connected, one end of described resistance R 2 is connected with the grid of switching tube Q1, the other end respectively with resistance R 4, one end of resistance R 6 is connected, the other end of described resistance R 4 is connected with the grid of switching tube Q3, the drain electrode of described switching tube Q3 is connected with the source electrode of switching tube Q1, the source ground of described switching tube Q3, the other end of described resistance R 6 respectively with resistance R 7, one end of resistance R 8 is connected, the other end of described resistance R 7 respectively with resistance R 3, one end of resistance R 5 is connected, the other end of described resistance R 3 is connected with the grid of switching tube Q2, the other end of described resistance R 5 is connected with the grid of switching tube Q4, the drain electrode of described switching tube Q4 is connected with the source electrode of switching tube Q3, the other end of described resistance R 8 respectively with the source electrode of switching tube Q4, ground is connected.
Described control unit is to full-bridge circuit transmit control signal PWM_B and control signal PWM_A.Described control signal PWM_B enters respectively the grid of switching tube Q1 through resistance R 2, and enters the grid of switching tube Q3 through resistance R 4; Described control signal PWM_A enters respectively the grid of switching tube Q2 through resistance R 3, and enters the grid of switching tube Q4 through resistance R 5.And when described control signal PWM_B and control signal PWM_A are complementary low and high level, export Continuity signal to full-bridge circuit, when described control signal PWM_B and control signal PWM_A are all high level or are all low level, export pick-off signal to full-bridge circuit.
Described pulse transformer T1 comprises former limit winding and two secondary windings.In described full-bridge circuit, the series connection node of the drain electrode of the source electrode of the series connection node of the drain electrode of the source electrode of switching tube Q1 and switching tube Q3, switching tube Q2 and switching tube Q4 is as the ac output end of full-bridge circuit, with the two ends of the former limit winding of pulse transformer T1, be connected respectively, and the first end 1 of described former limit winding is connected with the series connection node of the drain electrode of switching tube Q4 with the source electrode of switching tube Q2, the second end 2 of described former limit winding is connected with the series connection node of the drain electrode of switching tube Q3 with the source electrode of switching tube Q1.Described two secondary windings are respectively the first secondary winding and the second secondary winding, and the two ends of described the first secondary winding are connected with the first secondary driver element, and the two ends of the second secondary winding are connected with the second secondary driver element.Described full-bridge circuit for when receiving Continuity signal, is converted to the d. c. voltage signal of DC power supply output square wave voltage signal and exports pulse transformer T1 to, and when receiving pick-off signal no-output; Described pulse transformer T1 is used for converting described square wave voltage signal to burst pulse voltage signal that two-way is identical, and is sent to respectively the first secondary driver element and the second secondary driver element.
Described the first secondary driver element comprises diode D1, diode D2, capacitor C 1, voltage-stabiliser tube ZD1, voltage-stabiliser tube ZD2, voltage-stabiliser tube ZD5, resistance R 9, resistance R 10, resistance R 11, resistance R 12, resistance R 17, resistance R 19 and triode Q5.
The anode of described diode D1 is connected with the first end 11 of the first secondary winding, negative electrode respectively with resistance R 10, one end of capacitor C 1 is connected, described resistance R 9 is in parallel with diode D1, the other end of described capacitor C 1 is connected with an end of resistance R 11, the other end of described resistance R 11 is connected with the pin G1 of IGBT, the other end of described resistance R 10 respectively with an end of resistance R 17, one end of resistance R 19, the negative electrode of diode D2 is connected, the other end of described resistance R 17 is connected with the base stage of triode Q5, the other end of described resistance R 19 is connected with the second end 12 of the first secondary winding, the anode of described diode D2 respectively with the emitter of triode Q5, the pin E1 of IGBT is connected, described voltage-stabiliser tube ZD5 is in parallel with capacitor C 1, its negative electrode is connected with the negative electrode of diode D1, anode is connected with the series connection node of resistance R 11 with capacitor C 1, the collector electrode of described triode Q5 is connected with the negative electrode of voltage-stabiliser tube ZD5, the negative electrode of described voltage-stabiliser tube ZD1 is connected with the pin G1 of IGBT, anode is connected with the anode of voltage-stabiliser tube ZD2, the negative electrode of described voltage-stabiliser tube ZD2 is connected with the pin E1 of IGBT, the two ends of described resistance R 12 respectively with the pin G1 of IGBT, pin E1 is connected.
Wherein, described diode D1 disappears for the negative part of burst pulse voltage signal that pulse transformer T1 is sent, and only stays positive part; Described capacitor C 1 is used to IGBT that negative pressure is provided, make its in procedures of turn-off always in the back bias voltage state, guarantee its reliable cut-off; Described voltage-stabiliser tube ZD5 provides the amplitude size of negative pressure for limiting capacitor C 1 for IGBT.
Described the second secondary driver element comprises diode D3, diode D4, capacitor C 2, voltage-stabiliser tube ZD3, voltage-stabiliser tube ZD4, voltage-stabiliser tube ZD6, resistance R 13, resistance R 14, resistance R 15, resistance R 16, resistance R 18, resistance R 20 and triode Q6.
The anode of described diode D3 is connected with the second end 22 of the second secondary winding, negative electrode respectively with resistance R 14, one end of capacitor C 2 is connected, described resistance R 13 is in parallel with diode D3, the other end of described capacitor C 2 is connected with an end of resistance R 15, the other end of described resistance R 15 is connected with the pin G2 of IGBT, the other end of described resistance R 14 respectively with an end of resistance R 18, one end of resistance R 20, the negative electrode of diode D4 is connected, the other end of described resistance R 18 is connected with the base stage of triode Q6, the other end of described resistance R 20 is connected with the first end 21 of the second secondary winding, the anode of described diode D4 respectively with the emitter of triode Q6, the pin E2 of IGBT is connected, described voltage-stabiliser tube ZD6 is in parallel with capacitor C 2, its negative electrode is connected with the negative electrode of diode D3, anode is connected with the series connection node of resistance R 15 with capacitor C 2, the collector electrode of described triode Q6 is connected with the negative electrode of voltage-stabiliser tube ZD6, the negative electrode of described voltage-stabiliser tube ZD3 is connected with the pin G2 of IGBT, anode is connected with the anode of voltage-stabiliser tube ZD4, the negative electrode of described voltage-stabiliser tube ZD4 is connected with the pin E2 of IGBT, the two ends of described resistance R 16 respectively with the pin G2 of IGBT, pin E2 is connected.
The first end 1(of the first end 11 of described the first secondary winding, the first end 21 of the second secondary winding and former limit winding is the end that the source electrode of former limit winding and switching tube Q2 is connected with the series connection node of the drain electrode of switching tube 4) be Same Name of Ends.Pin G1 and pin G2 are respectively two grids of IGBT, and pin E1 and pin E2 are respectively two emitters of IGBT.
Described the first secondary driver element and the second secondary driver element are controlled IGBT in conducting state for the burst pulse voltage signal according to pulse transformer T1 output, and for controlling IGBT when the full-bridge circuit no-output in the back bias voltage cut-off state, thereby make IGBT reliably to end.
Describe the operation principle of the described drive circuit of the IGBT with back bias voltage of the present embodiment in detail below in conjunction with Fig. 2:
Select the part in sequencing control figure shown in Fig. 2 also it to be divided into to four-stage, be respectively the first stage to fourth stage, in Fig. 2 respectively with 1., 2., 3., 4. indicated.
Below, for simplified characterization, only use letter and number indication circuit element, control signal and associated terminal, for example, only use T1 indicating impulse transformer, with Q1 to Q4, mean respectively four switching tubes in full-bridge circuit, with PWM_A and PWM_B, mean two groups of control signals that control unit sends to full-bridge circuit, two grids that mean respectively IGBT with G1 and G2, mean respectively two emitters of IGBT with E1 and E2.
1.. the first stage:
PWM_A is high level signal, and PWM_B is low level signal, Q1 conducting, Q2 cut-off, Q3 cut-off, the Q4 conducting, and the T1 first end is low level, T1 the second end is high level, therefore G1 is high level, G2 is low level, and E1 is low level, and E2 is high level, and IGBT is in conducting state.
2.. second stage:
PWM_A is low level signal, and PWM_B is low level signal, Q1 conducting, the Q2 conducting, Q3 cut-off, Q4 cut-off, and the T1 first end is high level, T1 the second end is high level, therefore G1 is low level, G2 is low level, and E1 is high level, and E2 is high level, IGBT is in the back bias voltage cut-off state, described back bias voltage is provided by C1, and the size of back bias voltage, amplitude is determined by ZD5.
3.. the phase III:
PWM_A is low level signal, and PWM_B is high level signal, Q1 cut-off, Q2 conducting, Q3 conducting, Q4 cut-off, and the T1 first end is high level, T1 the second end is low level, therefore G1 is low level, G2 is high level, and E1 is high level, and E2 is low level, and IGBT is in conducting state.
4.. fourth stage:
PWM_A is low level signal, and PWM_B is low level signal, Q1 conducting, the Q2 conducting, Q3 cut-off, Q4 cut-off, and the T1 first end is high level, T1 the second end is high level, therefore G1 is low level, G2 is low level, and E1 is high level, and E2 is high level, IGBT is in the back bias voltage cut-off state, described back bias voltage is provided by C1, and the size of back bias voltage, amplitude is determined by ZD5.
Other structures in the present embodiment and effect are all identical with embodiment 1, repeat no more here.
Be understandable that, above execution mode is only the illustrative embodiments adopted for principle of the present utility model is described, yet the utility model is not limited to this.For those skilled in the art, in the situation that do not break away from spirit of the present utility model and essence, can make various modification and improvement, these modification and improvement also are considered as protection range of the present utility model.
Claims (9)
1. the drive circuit of the switch element with back bias voltage, is characterized in that, comprising: control unit, full-bridge circuit, pulse transformer, the first secondary driver element and the second secondary driver element; Described pulse transformer comprises former limit winding and two secondary windings;
Described control unit is for exporting Continuity signal or pick-off signal to full-bridge circuit;
Described full-bridge circuit is connected with the former limit winding of DC power supply, pulse transformer respectively, for when receiving Continuity signal, the d. c. voltage signal of DC power supply output is converted to square wave voltage signal and exports pulse transformer to, and when receiving pick-off signal no-output;
Two secondary windings of described pulse transformer are connected with the first secondary driver element, the second secondary driver element respectively, described pulse transformer is used for converting described square wave voltage signal to burst pulse voltage signal that two-way is identical, and is sent to respectively the first secondary driver element and the second secondary driver element;
Described the first secondary driver element is connected with two pins of switch element, the second secondary driver element is connected with two other pin of switch element, described the first secondary driver element and the second secondary driver element for the burst pulse voltage signal control switch unit according to pulse transformer output in conducting state, and for controlling switch element in the back bias voltage cut-off state when the full-bridge circuit no-output.
2. drive circuit according to claim 1, is characterized in that, described full-bridge circuit comprises the first brachium pontis and the second brachium pontis in parallel, and the sys node of described the first brachium pontis and the second brachium pontis is connected with ground with the positive pole of DC power supply respectively; Described the first brachium pontis comprises switching tube Q1 and the switching tube Q3 of series connection, and described the second brachium pontis comprises switching tube Q2 and the switching tube Q4 of series connection; The series connection node of the series connection node of described switching tube Q1 and switching tube Q3, described switching tube Q2 and switching tube Q4 is connected with the two ends of the former limit of pulse transformer winding respectively.
3. drive circuit according to claim 2, is characterized in that, described switching tube Q1 all adopts triode to switching tube Q4.
4. drive circuit according to claim 2, is characterized in that, described switching tube Q1 and switching tube Q2 adopt respectively the P-channel enhancement type metal-oxide-semiconductor, and described switching tube Q3 and switching tube Q4 adopt respectively N channel enhancement metal-oxide-semiconductor.
5. drive circuit according to claim 4, is characterized in that,
The drain electrode of switching tube Q1 in described the first brachium pontis is connected with the positive pole of DC power supply, and source electrode is connected with the drain electrode of switching tube Q3, the source ground of described switching tube Q3; The drain electrode of switching tube Q2 in described the second brachium pontis is connected with the positive pole of DC power supply, and negative pole is connected with the drain electrode of switching tube Q4, the source ground of described switching tube Q4;
Described control unit is for respectively to the grid of the grid of switching tube Q1, the switching tube Q3 PWM_B that transmits control signal, respectively to the grid of the grid of switching tube Q2, the switching tube Q4 PWM_A that transmits control signal, and when described control signal PWM_B and control signal PWM_A are complementary low and high level, be control unit output Continuity signal to full-bridge circuit, when described control signal PWM_B and control signal PWM_A are all high level or are all low level, be control unit output pick-off signal to full-bridge circuit.
6. drive circuit according to claim 5, is characterized in that,
Described full-bridge circuit also comprises that resistance R 1 is to resistance R 8;
One end of described resistance R 1 is connected with the positive pole of DC power supply, the other end respectively with the drain electrode of switching tube Q1, the drain electrode of switching tube Q2 is connected, one end of described resistance R 2 is connected with the grid of switching tube Q1, the other end respectively with resistance R 4, one end of resistance R 6 is connected, the other end of described resistance R 4 is connected with the grid of switching tube Q3, the other end of described resistance R 6 respectively with resistance R 7, one end of resistance R 8 is connected, the other end of described resistance R 7 respectively with resistance R 3, one end of resistance R 5 is connected, the other end of described resistance R 3 is connected with the grid of switching tube Q2, the other end of described resistance R 5 is connected with the grid of switching tube Q4, the other end of described resistance R 8 respectively with the source electrode of switching tube Q4, ground is connected,
The control signal PWM_B that described control unit sends respectively through resistance R 2 enter switching tube Q1 grid, enter the grid of switching tube Q3 through resistance R 4; The control signal PWM_A that described control unit sends respectively through resistance R 3 enter switching tube Q2 grid, enter the grid of switching tube Q4 through resistance R 5.
7. drive circuit according to claim 1, is characterized in that,
Two secondary windings of described pulse transformer are respectively the first secondary winding and the second secondary winding;
Described the first secondary driver element comprises diode D1, diode D2, capacitor C 1 and voltage-stabiliser tube ZD5; The two ends of described capacitor C 1 are connected with the negative electrode of diode D1, the pin G1 of switch element respectively, the anode of described diode D1 is connected with the first end of the first secondary winding, described voltage-stabiliser tube ZD5 is in parallel with capacitor C 1, its negative electrode is connected with the negative electrode of diode D1, anode is connected with the pin G1 of switch element, and the negative electrode of described diode D2 is connected with the second end of the first secondary winding, anode is connected with the pin E1 of switch element;
Described the second secondary driver element comprises diode D3, diode D4, capacitor C 2 and voltage-stabiliser tube ZD6; The two ends of described capacitor C 2 are connected with the negative electrode of diode D3, the pin G2 of switch element respectively, the anode of described diode D3 is connected with the second end of the second secondary winding, described voltage-stabiliser tube ZD6 is in parallel with capacitor C 2, its negative electrode is connected with the negative electrode of diode D3, anode is connected with the pin G2 of switch element, and the negative electrode of described diode D4 is connected with the first end of the second secondary winding, anode is connected with the pin E2 of switch element;
The first end of the first end of described the first secondary winding and the second secondary winding is Same Name of Ends.
8. drive circuit according to claim 7, is characterized in that,
Described the first secondary driver element also comprises voltage-stabiliser tube ZD1, voltage-stabiliser tube ZD2 and resistance R 12; The negative electrode of described voltage-stabiliser tube ZD1 is connected with the pin G1 of switch element, anode is connected with the anode of voltage-stabiliser tube ZD2, the negative electrode of described voltage-stabiliser tube ZD2 is connected with the pin E1 of switch element, and the two ends of described resistance R 12 are connected with pin G1, the pin E1 of switch element respectively;
Described the second secondary driver element also comprises voltage-stabiliser tube ZD3, voltage-stabiliser tube ZD4 and resistance R 16; The negative electrode of described voltage-stabiliser tube ZD3 is connected with the pin G2 of switch element, anode is connected with the anode of voltage-stabiliser tube ZD4, the negative electrode of described voltage-stabiliser tube ZD4 is connected with the pin E2 of switch element, and the two ends of described resistance R 16 are connected with pin G2, the pin E2 of switch element respectively.
9. drive circuit according to claim 8, is characterized in that,
Described the first secondary driver element also comprises resistance R 9, resistance R 10, resistance R 11, resistance R 17, resistance R 19 and triode Q5, described resistance R 9 is in parallel with diode D1, the two ends of described resistance R 11 respectively with the anode of voltage-stabiliser tube ZD5, the pin G1 of switch element is connected, the two ends of described resistance R 19 respectively with the negative electrode of diode D2, the second end of the first secondary winding is connected, one end of described resistance R 10 is connected with the negative electrode of diode D1, the other end respectively with an end of resistance R 17, the negative electrode of diode D2 is connected, the other end of described resistance R 17 is connected with the base stage of triode Q5, the collector electrode of described triode Q5 is connected with the negative electrode of voltage-stabiliser tube ZD5, emitter is connected with the anode of diode D2,
Described the second secondary driver element also comprises resistance R 13, resistance R 14, resistance R 15, resistance R 18, resistance R 20 and triode Q6, described resistance R 13 is in parallel with diode D3, the two ends of described resistance R 15 respectively with the anode of voltage-stabiliser tube ZD6, the pin G2 of switch element is connected, the two ends of described resistance R 20 respectively with the negative electrode of diode D4, the first end of the second secondary winding is connected, one end of described resistance R 14 is connected with the negative electrode of diode D3, the other end respectively with an end of resistance R 18, the negative electrode of diode D4 is connected, the other end of described resistance R 18 is connected with the base stage of triode Q6, the collector electrode of described triode Q6 is connected with the negative electrode of voltage-stabiliser tube ZD6, emitter is connected with the anode of diode D4.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320349273 CN203352425U (en) | 2013-06-18 | 2013-06-18 | Switch unit drive circuit with negative bias |
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| CN 201320349273 CN203352425U (en) | 2013-06-18 | 2013-06-18 | Switch unit drive circuit with negative bias |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467380A (en) * | 2014-12-31 | 2015-03-25 | 广州视源电子科技股份有限公司 | Driving device and method |
| CN115333338A (en) * | 2022-07-13 | 2022-11-11 | 浙江大学 | Negative bias half-bridge pre-drive circuit of motor controller |
| WO2023173854A1 (en) * | 2022-03-18 | 2023-09-21 | 中车永济电机有限公司 | Insulated gate bipolar transistor (igbt) driving device |
-
2013
- 2013-06-18 CN CN 201320349273 patent/CN203352425U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104467380A (en) * | 2014-12-31 | 2015-03-25 | 广州视源电子科技股份有限公司 | Driving device and method |
| WO2023173854A1 (en) * | 2022-03-18 | 2023-09-21 | 中车永济电机有限公司 | Insulated gate bipolar transistor (igbt) driving device |
| CN115333338A (en) * | 2022-07-13 | 2022-11-11 | 浙江大学 | Negative bias half-bridge pre-drive circuit of motor controller |
| CN115333338B (en) * | 2022-07-13 | 2024-05-17 | 浙江大学 | Negative bias half-bridge pre-driving circuit of motor controller |
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