CN203261256U - Three-phase inverter parallel connection IGBT driving system - Google Patents
Three-phase inverter parallel connection IGBT driving system Download PDFInfo
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- CN203261256U CN203261256U CN 201320225281 CN201320225281U CN203261256U CN 203261256 U CN203261256 U CN 203261256U CN 201320225281 CN201320225281 CN 201320225281 CN 201320225281 U CN201320225281 U CN 201320225281U CN 203261256 U CN203261256 U CN 203261256U
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Abstract
The utility model discloses a three-phase inverter parallel connection IGBT driving system relating to the driving and protection technology of the power switch device IGBT of the power electronic device. The IGBT driving system comprises an IGBT driving and protection circuit, a parallel connection IGBT module, and a PWM control circuit. The PWM control circuit is connected with a push-pull MOSFET switching circuit, an output end of which is connected with three isolation transformers. An output end of each of the isolation transformers is connected with two rectifier circuits. An output end of each of the rectifier circuits is connected with the IGBT driving and protection circuit, and therefore the driving power can be provided for six IGBT driving and protection circuits of a three-phase inverter bridge. Each of the IGBT driving and protection circuits is connected with a complementary push-pull power amplification circuit, which can be used to supply the parallel connection IGBT module with the driving current. The three-phase inverter parallel connection IGBT driving system is advantageous in that the driving of 12 IGBT modules of the three-phase inverter can be realized.
Description
Technical field
The utility model relates to the electric apparatus field, is specifically related to the drive and protection technology of device for power switching IGBT in the power electronic equipment.
Background technology
The application scenario of power electronic equipment in industry is more and more extensive, and as typical power electronic device, IGBT is widely used in various converters because it can still have higher electric pressure under higher switching frequency.And reliability and the cost of the drive and protection circuit of IGBT affect the cost performance of electronic power convertor complete machine.In addition, fast development along with power electronic technology, increasing Power Electronic Circuit and device begin to be applied to the large-power occasions such as water pump fan, new forms of energy power station, track traffic, flexible power system, and this electric current and electric pressure to IGBT is had higher requirement.Be to reduce the cost of IGBT module and the complexity of drive circuit, for low-voltage and high-current application scenario low-pressure high-power photovoltaic grid-connected inverting system particularly, normally that power grade is less IGBT module also links up and satisfies power grade.For improving the fail safe of invertor operation; usually adopt the drive and protection circuit of light-coupled isolation or transformer isolation for high-power IGBT; and for the power conversion occasion of low-voltage, high-current, output current ability and the current foldback circuit design of drive circuit are had higher requirement.In addition, because IGBT is the voltage-controlled type power device, so it need to provide at the grid of IGBT positive voltage and negative voltage respectively when turning on and off.Again because each IGBT needs a cover drive and protection circuit; this is for the three-phase inverter parallel IGBT system that contains a plurality of power switch modules; so that the driving power source system of IGBT becomes more complicated, this is totally unfavorable to improving whole aircraft reliability and increasing product market competition.Existing IGBT drive system; one side driving power too complex; so that becoming large cost, the control circuit volume increases; drive and protection circuit for parallel IGBT module separately designs often on the other hand; increased equally the complexity of drive and protection circuit; so that system cost increases, reduced the product cost performance.
The utility model content
The purpose of this utility model is to provide a kind of three-phase inverter parallel IGBT drive system, to solve the problems of the technologies described above.
The utility model can be realized by the following technical solutions:
A kind of three-phase inverter parallel IGBT drive system, comprise an IGBT driving and protective circuit, parallel IGBT module, it is characterized in that: also comprise 1 road pwm control circuit, 1 road pwm control circuit connects 1 tunnel push-pull type MOSFET translation circuit, and the output of push-pull type MOSFET translation circuit connects No. 3 isolating transformers;
The output of every road isolating transformer connects No. 2 rectification circuits;
The output of every road rectification circuit connects that an IGBT drives and protective circuit, and drives and protective circuit provides driving power for 6 road IGBT in the three phase inverter bridge;
Every road IGBT drives and protective circuit all connects a complementary push-pull power amplification circuit, and the complementary push-pull power amplification circuit provides drive current for parallel IGBT module.The utility model has been realized the driving of 12 IGBT modules of three-phase inverter.
Pwm control circuit is made of integrated electric die mould pwm chip and timing resistance-capacitance circuit.
Push-pull type MOSFET translation circuit comprises two identical MOSFET pipes of parameter, connects a RC filter circuit between the drain electrode of two identical MOSFET pipes of parameter.
The isolating transformer primary side is connected to the drain electrode of two identical MOSFET pipes of parameter and the power end of integrated electric die mould pwm chip; Secondary side is connected to rectification circuit.
IGBT drives and protective circuit is made of integrated chip, charging delay capacitor, overcurrent or short-circuit protection detection resistance, fast recovery diode, complementary push-pull power amplification circuit and parallel IGBT module driving resistance with light-coupled isolation and failure protection function; Positive power source terminal and negative power end with the integrated chip of light-coupled isolation and failure protection function all are connected to every road rectification circuit output end; Every road rectification circuit generating positive and negative voltage common port is connected to the earth terminal with the integrated chip U2 of light-coupled isolation and failure protection function.
Parallel IGBT module drives the grid that resistance connects respectively parallel IGBT module; Be connected to the emission collection of parallel IGBT module with the earth terminal of the integrated chip of light-coupled isolation and failure protection function; The negative pole of fast recovery diode is connected to the collector electrode of parallel IGBT module.
Beneficial effect: 1. the utility model adopts 1 road pwm control circuit to realize 3 road IGBT driving powers, and for reaching enough powers, allow to adopt the dc switch converter of push-pull type band isolating transformer, this not only can increase power output and the reliability of driving power, and be conducive to simplied system structure, reduce the driving power cost.2. the utility model so that drive circuit can drive parallel IGBT module, further reduces cost and the volume of drive system by being connected the complementary push-pull power amplification circuit in the integrated optocoupler isolation drive of monolithic with the protection chip.
Description of drawings
Fig. 1 is the schematic diagram of three-phase inverter parallel IGBT drive system.
Fig. 2 is a kind of circuit diagram of three-phase inverter parallel IGBT drive system.
Embodiment
Technological means, the creation characteristic of realizing for the utility model, reach purpose and effect is easy to understand, below in conjunction with concrete diagram, further set forth the utility model.
See figures.1.and.2, a kind of three-phase inverter parallel IGBT drive system, comprise an IGBT driving and protective circuit, parallel IGBT module, also comprise 1 road pwm control circuit, 1 road pwm control circuit connects 1 tunnel push-pull type MOSFET translation circuit, and the output of push-pull type MOSFET translation circuit connects No. 3 isolating transformers; The output of every road isolating transformer connects No. 2 rectification circuits; The output of every road rectification circuit connects that an IGBT drives and protective circuit, and drives and protective circuit provides driving power for 6 road IGBT in the three phase inverter bridge; Every road IGBT drives and protective circuit all connects a complementary push-pull power amplification circuit, and the complementary push-pull power amplification circuit provides drive current for parallel IGBT module.
Described pwm control circuit is made of integrated electric die mould pwm chip and timing resistance-capacitance circuit.Push-pull type MOSFET translation circuit comprises two identical MOSFET pipes of parameter (Q1, Q2), connects RC filter circuit (R3, C2) between Q1, the Q2 drain electrode.
Go up mutually brachium pontis as example take A, isolating transformer (TR1) primary side is connected to the power end (VC) of Q1, Q2 drain electrode and U1; Secondary side is connected to rectification circuit.Described IGBT drives and protective circuit detects resistance (R4), fast recovery diode (DF1), complementary push-pull power amplification circuit (R5, T1, T2) and parallel IGBT module driving resistance (Rg1, Rg2) formation by integrated chip (U2), charging delay capacitor (C7), overcurrent or short-circuit protection with light-coupled isolation and failure protection function; The positive power source terminal of U2 (VCC) and negative power end (VEE) are connected to every road rectification circuit output end; Every road rectification circuit generating positive and negative voltage common port is connected to the earth terminal (VE) of U2.Go up mutually brachium pontis parallel IGBT pipe as example take A, Rg1, Rg2 are connected to respectively the grid of IGBT1, IGBT2; VE is connected to the emission collection of parallel IGBT module; The negative pole of DF1 is connected to the collector electrode of parallel IGBT module.
Specific embodiment 1 is with reference to Fig. 2
Three-phase inverter parallel IGBT drive system of the present utility model is driven by push-pull type PWM DC converter and IGBT and protective circuit consists of.Pwm chip (U1) is worked under the oscillator that timing resistance-capacitance circuit (R1, R2, C1) and its internal circuit consist of, the square-wave pulse that output two-way (OUTA, OUTB) is complementary is that the push-pull type translation circuit that two MOSFET pipes (Q1, Q2) consist of provides gate drive signal.Q1, Q2 simultaneously consist of 3 tunnel push-pull type DC converter with No. 3 isolating transformers and corresponding rectification circuit, for 3 road drive and protection circuit of three-phase inverter parallel IGBT module provide forward drive power supply+15V and negative sense driving power-5V.Because the existence of R1, so that have Dead Time between the OUTA, OUTB two-way output signal, thus avoided the straight-through phenomenon between Q1, the Q2.The isolating transformer output of every road connects No. 2 full-wave rectifying circuits, and the drive and protection circuit that is respectively the connect in parallel with upside and downside IGBT module of same brachium pontis provides driving power.
Go up mutually brachium pontis as example take A; the pwm pulse signal that digital signal processor (DSP) sends is connected to the signal input part (VIN) with the integrated chip (U2) of light-coupled isolation and failure protection function, exports gate drive signal by the output (VOUT) by U2 after the light-coupled isolation of U2 chip internal.For guaranteeing that the current drive capability that drives signal enough drives parallel IGBT module, VOUT connects the complementary push-pull power amplification circuit that is made of NPN type triode T1 and positive-negative-positive triode T2 by driving resistance (R5), and the gate drive signal electric current is further amplified.When system starts, because the collector voltage of IGBT also is higher than protection voltage far away, for making system's normal operation, the access delay capacitor (C7) that charges between the earth terminal (VE) of U2 and fault detect end (DESAT).
Go up mutually brachium pontis as example take A; when overcurrent or short-circuit protection detection resistance (R4) both end voltage; when fast recovery diode (DF1) tube voltage drop and IGBT collection radio are pressed greater than protection voltage; the VOUT output low level; IGBT is implemented to turn-off; prevent that the electric current that flows through IGBT from further raising and the damage device; the fault-signal output (FUALT) of U2 becomes low level and gives DSP simultaneously; receive the next PWM cycle of fault-signal at DSP; reset signal end (RESET) to U2 is sent into low level; IGBT is opened in operation again, realizes Real-Time Monitoring and protection to IGBT.Even for guarantee still to allow DSP correctly monitor fault-signal in noisy situation, the fault-signal that U2 is exported adopts pull-up resistor (R6) to amplify.
More than show and described basic principle of the present utility model and principal character and advantage of the present utility model.The technical staff of the industry should understand; the utility model is not subjected to the restriction of above-mentioned using method; that describes in above-mentioned using method and the specification just illustrates principle of the present utility model; under the prerequisite that does not break away from the utility model spirit and scope; the utility model also has various changes and modifications, and these changes and improvements all fall in claimed the utility model scope.The claimed scope of the utility model is defined by appending claims and equivalent thereof.
Claims (6)
1. three-phase inverter parallel IGBT drive system, comprise an IGBT driving and protective circuit, parallel IGBT module, it is characterized in that: also comprise 1 road pwm control circuit, 1 road pwm control circuit connects 1 tunnel push-pull type MOSFET translation circuit, and the output of push-pull type MOSFET translation circuit connects No. 3 isolating transformers;
The output of every road isolating transformer connects No. 2 rectification circuits;
The output of every road rectification circuit connects that an IGBT drives and protective circuit, and drives and protective circuit provides driving power for 6 road IGBT in the three phase inverter bridge;
Every road IGBT drives and protective circuit all connects a complementary push-pull power amplification circuit, and the complementary push-pull power amplification circuit provides drive current for parallel IGBT module.
2. a kind of three-phase inverter parallel IGBT drive system according to claim 1 is characterized in that, pwm control circuit is made of integrated electric die mould pwm chip and timing resistance-capacitance circuit.
3. a kind of three-phase inverter parallel IGBT drive system according to claim 2 is characterized in that, push-pull type MOSFET translation circuit comprises two identical MOSFET pipes of parameter, connects a RC filter circuit between the drain electrode of two identical MOSFET pipes of parameter.
4. a kind of three-phase inverter parallel IGBT drive system according to claim 3 is characterized in that, the isolating transformer primary side is connected to the drain electrode of two identical MOSFET pipes of parameter and the power end of integrated electric die mould pwm chip;
Secondary side is connected to rectification circuit.
5. a kind of three-phase inverter parallel IGBT drive system according to claim 4, it is characterized in that IGBT drives and protective circuit is made of integrated chip, charging delay capacitor, overcurrent or short-circuit protection detection resistance, fast recovery diode, complementary push-pull power amplification circuit and parallel IGBT module driving resistance with light-coupled isolation and failure protection function;
Positive power source terminal and negative power end with the integrated chip of light-coupled isolation and failure protection function all are connected to every road rectification circuit output end;
Every road rectification circuit generating positive and negative voltage common port is connected to the earth terminal with the integrated chip U2 of light-coupled isolation and failure protection function.
6. a kind of three-phase inverter parallel IGBT drive system according to claim 5 is characterized in that, parallel IGBT module drives the grid that resistance connects respectively parallel IGBT module; Be connected to the emission collection of parallel IGBT module with the earth terminal of the integrated chip of light-coupled isolation and failure protection function; The negative pole of fast recovery diode is connected to the collector electrode of parallel IGBT module.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320225281 CN203261256U (en) | 2013-04-27 | 2013-04-27 | Three-phase inverter parallel connection IGBT driving system |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201320225281 CN203261256U (en) | 2013-04-27 | 2013-04-27 | Three-phase inverter parallel connection IGBT driving system |
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| CN203261256U true CN203261256U (en) | 2013-10-30 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953991A (en) * | 2015-06-23 | 2015-09-30 | 东南大学 | IGBT (insulated gate bipolar transistor) drive circuit provided with level bootstrap and charge pump circuits and adopting double N-MOSFET (N-channel metal oxide semiconductor field effect transistor) drive stages as well as sequential control method |
| CN108377667A (en) * | 2015-10-30 | 2018-08-07 | 法拉第未来公司 | Method and system for interconnecting IGBT module in parallel |
| CN111244927A (en) * | 2020-03-10 | 2020-06-05 | 一巨自动化装备（上海）有限公司 | Bus capacitor active discharge circuit |
| CN111257711A (en) * | 2018-11-30 | 2020-06-09 | 臻驱科技（上海）有限公司 | Gate-level resistor automatic switching circuit and double-pulse automatic testing circuit |
| CN114326505A (en) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | Multi-module cooperative control door driving system based on three-level PCB (printed circuit board) stack structure |
-
2013
- 2013-04-27 CN CN 201320225281 patent/CN203261256U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104953991A (en) * | 2015-06-23 | 2015-09-30 | 东南大学 | IGBT (insulated gate bipolar transistor) drive circuit provided with level bootstrap and charge pump circuits and adopting double N-MOSFET (N-channel metal oxide semiconductor field effect transistor) drive stages as well as sequential control method |
| CN108377667A (en) * | 2015-10-30 | 2018-08-07 | 法拉第未来公司 | Method and system for interconnecting IGBT module in parallel |
| CN111257711A (en) * | 2018-11-30 | 2020-06-09 | 臻驱科技（上海）有限公司 | Gate-level resistor automatic switching circuit and double-pulse automatic testing circuit |
| CN111244927A (en) * | 2020-03-10 | 2020-06-05 | 一巨自动化装备（上海）有限公司 | Bus capacitor active discharge circuit |
| CN114326505A (en) * | 2021-12-29 | 2022-04-12 | 杭州电子科技大学 | Multi-module cooperative control door driving system based on three-level PCB (printed circuit board) stack structure |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20131030 Termination date: 20140427 |