CN208849690U - Combination switch, half-bridge bridge arm circuit structure and rectification circuit - Google Patents
Combination switch, half-bridge bridge arm circuit structure and rectification circuit Download PDFInfo
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- CN208849690U CN208849690U CN201821854756.2U CN201821854756U CN208849690U CN 208849690 U CN208849690 U CN 208849690U CN 201821854756 U CN201821854756 U CN 201821854756U CN 208849690 U CN208849690 U CN 208849690U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Abstract
The utility model discloses a kind of combination switch, half-bridge bridge arm circuit structure and rectification circuit, combination switch includes: enhancement type gallium nitride transistor and diode；Enhancement type gallium nitride transistor has grid, source electrode and drain electrode；Diode has cathode and an anode, and cathode is electrically connected at drain electrode, and anode is electrically connected at source electrode, so that diode inverse parallel is connected to enhancement type gallium nitride transistor；Wherein, when not applying driving voltage between grid and source electrode, the forward conduction voltage drop of diode is less than the reverse-conducting pressure drop between enhancement type gallium nitride transistor source and drain electrode.
Description
Technical field
The utility model relates to a kind of combination switch, half-bridge bridge arm circuit structure and rectification circuits.
Background technique
With the development that Switching Power Supply minimizes, the efficiency requirements of Switching Power Supply are also increasingly improved.Wherein, before Switching Power Supply
The loss of grade rectification bridge portion accounts for 20% or more of Switching Power Supply overall losses, therefore how to reduce the loss of rectification bridge portion
It is one of the key point of lifting switch power-efficient.For this purpose, develop in the industry using MOSFET synchronous rectification mode reduce it is whole
The method of bridge loss is flowed, but the problem of this method is limited to surge current.It is surge electricity due to the presence of MOSFET body diode
Stream provides access, has surge current to flow through the body diode of MOSFET when Switching Power Supply being caused to power on for the first time, and traditional
MOSFET does not bear the ability of surge current, to there is the risk of breakdown MOSFET.Even if MOSFET is in addition one two in parallel
Pole pipe still has part surge current to flow through since the pressure drop of the body diode of the pressure drop and MOSFET of diode is close
The body diode of MOSFET, therefore MOSFET still has breakdown risk.Therefore it is badly in need of developing a kind of overcoming answering for drawbacks described above
Combination switch, half-bridge bridge arm circuit structure and rectification circuit.
Utility model content
Therefore, the technical problem to be solved by the utility model is to provide a kind of combination switches, wherein includes:
Enhancement type gallium nitride transistor has a grid, source electrode and drain electrode；And
Diode has an anode and cathode, and the cathode is electrically connected at the drain electrode, and the anode is electrically connected at
The source electrode, so that the diode inverse parallel is connected to the enhancement type gallium nitride transistor；
Wherein, when not applying driving voltage between the grid and the source electrode, the forward conduction voltage drop of the diode
Less than the reverse-conducting pressure drop between the source electrode and the drain electrode of the enhancement type gallium nitride transistor.
Above-mentioned combination switch, wherein when reverse current occur in the source electrode and the drain electrode, the diode is institute
State the release access of reverse current.
Above-mentioned combination switch, wherein the combination switch also includes a control module, described in the control module coupling
The grid of enhancement type gallium nitride transistor.
Above-mentioned combination switch, wherein the control module detects the drain voltage of the combination switch, according to the leakage
Pole tension output drive signal controls the enhancement type gallium nitride transistor switch or closure.
Above-mentioned combination switch, wherein one first reference voltage and one second reference voltage is arranged in the control module,
In, second reference voltage is higher than first reference voltage.
Above-mentioned combination switch, wherein in combination switch course of normal operation, when the drain voltage is lower than described the
When one reference voltage, the enhancement type gallium nitride transistor turns；When the drain voltage is higher than second reference voltage,
The enhancement type gallium nitride transistor shutdown.
The utility model also provides a kind of half-bridge bridge arm circuit structure, wherein compound including the first combination switch and second
Switch, first combination switch and the second combination switch are combination switch described above, the increasing of first combination switch
The drain electrode of the enhancement type gallium nitride transistor of the source electrode of strong type gallium nitride transistor and second combination switch is electrically connected.
The utility model also provides a kind of rectification circuit for having boost function, which is characterized in that the of the rectification circuit
One bridge arm is made of above-mentioned half-bridge bridge arm circuit structure, wherein the rectification circuit further includes one second bridge arm, including each other
The first of concatenated third switching tube and one the 4th switching tube, the second end of the third switching tube and the 4th switching tube
End is connected and is coupled to by one first inductance element the first end of an AC power source；First combination switch with it is described
The common end of second combination switch is connected to the second end of the AC power source；And an output capacitance, the output capacitance
One end is electrically connected at the drain electrode of first combination switch, and it is multiple that the other end of the output capacitance is electrically connected at described second
The source electrode of combination switch.
Above-mentioned rectification circuit, wherein further include concatenated one first surge diode and one second surge diode, institute
The cathode for stating the first surge diode is connected to the first end of the third switching tube, and the anode of the second surge diode connects
It is connected to the second end of the 4th switching tube, the cathode of the anode of the first surge diode and the second surge diode
It is connected to the first end of the AC power source.
Above-mentioned rectification circuit, wherein when between the first end of the AC power source and second end being forward voltage, wave
Electric current is gushed successively to release via the diode formation of the first surge diode, the output capacitance and second combination switch
Put back to road.
Above-mentioned rectification circuit, wherein when between the first end of the AC power source and second end being negative voltage, wave
Electric current is gushed successively to release via the formation of the diode of first combination switch, the output capacitance and the second surge diode
Put back to road.
The utility model also provides a kind of rectification circuit, wherein including the first combination switch, the second combination switch, third
Combination switch and the 4th combination switch, are electrically connected and constitute full-bridge circuit structure, and first combination switch, second compound open
It closes, third combination switch and the 4th combination switch are combination switch described above.
Above-mentioned rectification circuit, wherein the source electrode of the enhancement type gallium nitride transistor of first combination switch with it is described
The drain electrode of the enhancement type gallium nitride transistor of second combination switch is electrically connected to the first end of an AC power source；The third is multiple
The drain electrode of the enhancement type gallium nitride transistor of the source electrode of the enhancement type gallium nitride transistor of combination switch and the 4th combination switch
It is electrically connected to the second end of the AC power source；The drain electrode of the enhancement type gallium nitride transistor of first combination switch and institute
The drain electrode for stating the enhancement type gallium nitride transistor of third combination switch is electrically connected a first lead-out terminal, and described second compound opens
The source electrode of the enhancement type gallium nitride transistor of the source electrode of the enhancement type gallium nitride transistor of pass and the 4th combination switch is electrical
Connect second output terminal.
Above-mentioned rectification circuit, wherein further include a control module, be coupled to the first end and second of the AC power source
The grid of end and each combination switch, the control module is according to the voltage of the first end of the AC power source and second
The voltage at end controls each combination switch respectively and opens or close.
Above-mentioned rectification circuit, wherein a third reference voltage is arranged in the control module, when the of the AC power source
When the voltage of one end is greater than the third reference voltage, the control module controls first combination switch and described 4th multiple
Combination switch conducting, when the voltage of the second end of the AC power source is greater than the third reference voltage, the control module control
Make second combination switch and third combination switch conducting.
Above-mentioned rectification circuit, wherein each combination switch in the rectification circuit all includes a control module,
The control module is electrically connected to the grid of the enhancement type gallium nitride transistor.
Above-mentioned rectification circuit, wherein the control module detects the drain voltage of the combination switch, according to the leakage
Pole tension output drive signal controls the enhancement type gallium nitride transistor switch or closure.
Above-mentioned rectification circuit, wherein one first reference voltage and one second reference voltage is arranged in the control module,
In, second reference voltage is higher than first reference voltage.
Above-mentioned rectification circuit, wherein in the rectification circuit course of normal operation, when the drain voltage is lower than institute
When stating the first reference voltage, the enhancement type gallium nitride transistor turns；When the drain voltage is higher than described second with reference to electricity
When pressure, the enhancement type gallium nitride transistor shutdown.
The utility model is directed to the prior art its effect and is: by by enhancement type gallium nitride transistor for realizing same
Rectification function is walked, while diode is set and provides access of releasing for surge current, so that it is guaranteed that flowing through enhancing without surge current
Type gallium nitride transistor avoids the problem of enhancement type gallium nitride transistor is punctured by surge current.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the utility model combination switch first embodiment；
Fig. 2 is the structural schematic diagram of the utility model half-bridge bridge arm circuit structure；
Fig. 3 is the structural schematic diagram of the utility model rectification circuit first embodiment；
Fig. 4 is the structural schematic diagram of the utility model rectification circuit second embodiment；
Fig. 5-5A is the structural schematic diagram of the utility model combination switch second embodiment；
Fig. 6 is the structural schematic diagram of the utility model rectification circuit 3rd embodiment；
Fig. 7 is the structural schematic diagram of the utility model rectification circuit fourth embodiment；
Fig. 8 is the structural schematic diagram of the 5th embodiment of the utility model rectification circuit.
Wherein, appended drawing reference are as follows:
Combination switch 1
Enhancement type gallium nitride transistor S1, S2, S3, S4
Grid G
Source S
Drain D
Diode D1, D2, D3, D4
Control module 15
First reference voltage Vref 1
Second reference voltage Vref 2
Third reference voltage Vref 3
Operational amplifier 151,152
Rest-set flip-flop 153
Driver 154
First bridge arm 21
Second bridge arm 22
Third switching tube 221
4th switching tube 222
First inductance component L pfc
The first end L of AC power source
The second end N of AC power source
Output capacitance C
First surge diode 23
Second surge diode 24
First combination switch 11
Second combination switch 12
Third combination switch 13
4th combination switch 14
First lead-out terminal VBUS+
The sub- VBUS- of second output terminal
Specific embodiment
Be described in further detail with reference to the accompanying drawing with specific embodiment to the utility model: the present embodiment is with this reality
With being implemented under premised on new technique scheme, embodiment and operating process, but the protection model of the utility model are given
It encloses and is not limited to the following embodiments.
Fig. 1 is please referred to, Fig. 1 is the structural schematic diagram of the utility model combination switch first embodiment.As shown in Figure 1, this
The combination switch 1 of utility model includes: enhancement type gallium nitride transistor S1 and diode D1；Enhancement type gallium nitride transistor S1 tool
There are grid G, source S and drain D；Diode D1 has anode and cathode, and cathode is electrically connected at drain D, and anode is electrically connected
In source S, so that diode D1 inverse parallel is connected to enhancement type gallium nitride transistor S1；Wherein, when between grid G and source S not
When applying driving voltage, i.e., when voltage is less than or equal to zero between grid G and source S, between the anode and cathode of diode D1
Reverse-conducting pressure drop between source S and drain D of the forward conduction voltage drop less than enhancement type gallium nitride transistor S1, works as source S
When there is surge current with drain D, diode D1 can be the access of releasing of surge current.
Referring to figure 2., Fig. 2 is the structural schematic diagram of the utility model half-bridge bridge arm circuit structure.As shown in Fig. 2, half-bridge
Bridge arm circuit structure includes two combination switches as shown in Figure 1, i.e. the first combination switch 11 and the second combination switch 12, and first
The source S of the enhancement type gallium nitride transistor S1 of combination switch 11 and the enhancement type gallium nitride transistor S2 of the second combination switch 12
Drain D be electrically connected.
It should be noted that half-bridge bridge arm circuit structure includes two combination switches as shown in Figure 1 in the present embodiment,
But the utility model is not limited thereto, and half-bridge bridge arm circuit structure may also include two as shown in Figure 5 in other embodiments
Combination switch.
Wherein, combination switch 11 includes: enhancement type gallium nitride transistor S1 and diode D1；Enhancement type gallium nitride transistor
S1 has grid G, source S and drain D；Diode D1 has anode and cathode, and cathode is electrically connected at drain D, and anode is electrical
It is connected to source S.Combination switch 12 includes: enhancement type gallium nitride transistor S2 and diode D2；Enhancement type gallium nitride transistor
S2 has grid G, source S and drain D；Diode D2 has anode and cathode, and cathode is electrically connected at drain D, and anode is electrical
It is connected to source S, the working principle of the combination switch 11,12 of half-bridge bridge arm circuit structure and the work of aforementioned combination switch 1 are former
Manage identical, therefore details are not described herein again.
Referring to figure 3., Fig. 3 is the structural schematic diagram of the utility model rectification circuit first embodiment.As shown in figure 3, whole
Current circuit 2 includes the first bridge arm 21 and the second bridge arm 22, and the first bridge arm 21 is made of half-bridge bridge arm circuit structure above-mentioned；Second
Bridge arm 22 includes the third switching tube 221 and one the 4th switching tube 222 that are one another in series, the second end of third switching tube 221 with
The first end of 4th switching tube 222 is connected and is coupled to the first end of an AC power source by one first inductance component L pfc
L；The common end of first combination switch 11 and the second combination switch 12 is connected to the second end N of AC power source；And one output electricity
Hold C, one end of output capacitance C is electrically connected at the drain D of the first combination switch 11, and the other end of output capacitance C is electrically connected
In the source S of the second combination switch 12.Wherein, it when the voltage waveform of AC power source is in positive half period, is positive between L and N
To voltage；It is negative voltage between L and N when the voltage waveform of AC power source is in negative half-cycle.When being positive between L and N
Enhancement type gallium nitride transistor S2 when voltage, in the first inductance component L pfc, third switching tube 221 and the second combination switch 12
Form a booster circuit.Similarly, the enhancement type gallium nitride when between L and N being negative voltage, in the first combination switch 11
Transistor S1, the 4th switching tube 222, the first inductance component L pfc form a booster circuit.
Further, rectification circuit 2 further includes concatenated one first surge diode 23 and one second surge diode 24,
The cathode of first surge diode 23 is connected to the first end of third switching tube 221, the anode connection of the second surge diode 24
To the second end of the 4th switching tube 222, the anode of the first surge diode 23 and the cathode of the second surge diode 24 are connected to
The first end L of AC power source.Wherein, it when Switching Power Supply powers on constantly for the first time, has biggish surge current and occurs, it can be by
First surge diode 23, the second surge diode 24, diode D1 and the second combination switch in the first combination switch 11
Diode D2 in 12 carries out surge protection to the switching tube in circuit.At this point, the enhanced nitridation in the first combination switch 11
Enhancement type gallium nitride transistor S2 in gallium transistor S1 and the second combination switch 12 is not open-minded, i.e. enhancement type gallium nitride crystal
Voltage between the grid and source electrode of pipe is less than or equal to zero.When between the first end L and second end N of AC power source be forward voltage
When, starting is formed by surge current successively via the two of the first surge diode 23, output capacitance C and the second combination switch 12
Pole pipe D2 forms Releasing loop；When between the first end L of AC power source and second end N being negative voltage, surge current is successively
Releasing loop is formed via the diode D1 of the first combination switch 11, output capacitance C and the second surge diode 24.Due to grid
Do not apply driving voltage between G and source S, i.e., when the voltage between grid and source electrode is less than or equal to zero, enhancement type gallium nitride transistor
Reverse-conducting pressure drop between middle source electrode and drain electrode is greater than the forward conduction voltage drop between diode anode and cathode, therefore enhances
Type gallium nitride transistor will not provide access for surge current, and surge current can only be in parallel by enhancement type gallium nitride transistor institute
Diode form access, the problem of MOSFET may be punctured which solve surge current.
Referring to figure 4., Fig. 4 is the structural schematic diagram of the utility model rectification circuit second embodiment.As shown in figure 4, whole
Current circuit includes four combination switches as shown in Figure 1, and four combination switches, which are electrically connected, constitutes full-bridge circuit structure.
Further, four combination switches are respectively the first combination switch 11, the second combination switch 12, third combination switch
13 and the 4th combination switch 14, the source S and the second combination switch of the enhancement type gallium nitride transistor S1 of the first combination switch 11
The drain D of 12 enhancement type gallium nitride transistor S2 is electrically connected to the first end L of AC power source；The increasing of third combination switch 13
The drain D of the enhancement type gallium nitride transistor S4 of the source S and the 4th combination switch 14 of strong type gallium nitride transistor S3 electrically connects
It is connected to the second end N of AC power source；The drain D of the enhancement type gallium nitride transistor S1 of first combination switch 11 with third is compound opens
The drain D for closing 13 enhancement type gallium nitride transistor S3 is electrically connected first lead-out terminal VBUS+, the increasing of the second combination switch 12
The source S of the enhancement type gallium nitride transistor S4 of the source S and the 4th combination switch 14 of strong type gallium nitride transistor S2 electrically connects
Meet the sub- VBUS- of second output terminal.
First combination switch 11 includes: enhancement type gallium nitride transistor S1 and diode D1；Enhancement type gallium nitride transistor
S1 has grid G, source S and drain D；Diode D1 has anode and cathode, and cathode is electrically connected at drain D, and anode is electrical
It is connected to source S.Second combination switch 12 includes: enhancement type gallium nitride transistor S2 and diode D2；Enhancement type gallium nitride is brilliant
Body pipe S2 has grid G, source S and drain D；Diode D2 has anode and cathode, and cathode is electrically connected at drain D, anode
It is electrically connected at source S.Third combination switch 13 includes: enhancement type gallium nitride transistor S3 and diode D3；Enhanced nitridation
Gallium transistor S3 has grid G, source S and drain D；Diode D3 has anode and cathode, and cathode is electrically connected at drain D,
Anode is electrically connected at source S.4th combination switch 14 includes: enhancement type gallium nitride transistor S4 and diode D4；It is enhanced
Gallium nitride transistor S4 has grid G, source S and drain D；Diode D4 has anode and cathode, and cathode is electrically connected at leakage
Pole D, anode are electrically connected at source S.
Wherein, it when Switching Power Supply powers on for the first time, has biggish surge current and occurs, it can be by the first combination switch
Diode D1 in 11, the diode D2 in the second combination switch 12, the diode D3 and the 4th in third combination switch 13
Diode D4 in combination switch 14 carries out surge protection to the switching tube in circuit.At this point, the increasing in the first combination switch 11
In enhancement type gallium nitride transistor S2, third combination switch 13 in strong type gallium nitride transistor S1, the second combination switch 12
Enhancement type gallium nitride transistor S4 in enhancement type gallium nitride transistor S3 and the 4th combination switch 14 does not apply driving electricity
Pressure, i.e. voltage between the grid and source electrode of enhancement type gallium nitride transistor are both less than equal to zero.When AC power source first end L with
When being forward voltage between second end N, starting is formed by surge current successively via the diode in the first combination switch 11
Diode D4 in D1, output capacitance C and the 4th combination switch 14 forms Releasing loop；As the first end L of AC power source and
Between two end N be negative voltage when, surge current successively via in third combination switch 13 diode D3, output capacitance C and
Diode D2 in second combination switch 12 forms Releasing loop.Due to when the voltage between grid and source electrode be less than or equal to zero when,
Reverse-conducting pressure drop in enhancement type gallium nitride transistor between pressure drop source electrode and drain electrode is greater than between diode anode and cathode
Forward conduction voltage drop, therefore enhancement type gallium nitride transistor will not provide access for surge current, and surge current can only pass through
Enhancement type gallium nitride transistor diode in parallel forms access, and which solve surge currents may puncture asking for MOSFET
Topic.
- 5A referring to figure 5., Fig. 5-5A are the structural schematic diagram of the utility model combination switch second embodiment.Fig. 5-5A
The combination switch shown is roughly the same with the structure of combination switch shown in fig. 1, therefore details are not described herein again for same section,
Now different piece is described as follows.Combination switch 1 also includes control module 15, and control module 15 couples enhancement type gallium nitride crystal
The grid G of pipe S1；After start completion, when combination switch starts to work normally, control module 15 detects the drain electrode of combination switch 1
Voltage controls enhancement type gallium nitride transistor S1 switch or closure according to drain voltage output drive signal.
Further, control module 15 is provided with one first reference voltage Vref 1 and one second reference voltage Vref 2,
In, the second reference voltage Vref 2 is higher than the first reference voltage Vref 1.In combination switch course of normal operation, work as drain voltage
When lower than the first reference voltage Vref 1, control enhancement type gallium nitride transistor S1 conducting；When drain voltage is higher than second with reference to electricity
When pressing Vref2, control enhancement type gallium nitride transistor S1 shutdown.
Still further, control module 15 includes, two operational amplifiers 151,152, rest-set flip-flop 153 and driver
154, the output end of two operational amplifiers 151,152 is electrically connected at rest-set flip-flop 153, the output end electricity of rest-set flip-flop 153
Property is connected to driver 154, and driver 154 is electrically connected at the grid G of enhancement type gallium nitride transistor S1, operational amplifier
151 first end receives the first reference voltage Vref 1, the second end of operational amplifier 151 and the first end of operational amplifier 152
It is electrically connected at the drain D of enhancement type gallium nitride transistor S1, the second end of operational amplifier 152 receives the second reference voltage
Vref2.Wherein, the first reference voltage Vref 1 and the second reference voltage Vref 2 are be source electrode reference voltages with referring to.Normally
When work, control module 15 detects the drain voltage of combination switch 1, when drain voltage is lower than the first reference voltage of reference voltage
When Vref1, operational amplifier 151 exports high level signal, and by 153 set of rest-set flip-flop, rest-set flip-flop 153 exports high level letter
Number, which controls enhancement type gallium nitride transistor S1 conducting by driver 154.Due to enhancement type gallium nitride crystal
Conduction impedance when pipe S1 is opened is smaller than diode D1, so that electric current crosses enhancement type gallium nitride transistor S1 to reduce loss.
When drain voltage is greater than the second reference voltage Vref 2, operational amplifier 152 exports high level signal, and rest-set flip-flop 153 is answered
Position, rest-set flip-flop 153 export low level signal, which controls enhancement type gallium nitride transistor by driver 154
S1 shutdown.
Fig. 6 is please referred to, Fig. 6 is the structural schematic diagram of the utility model rectification circuit 3rd embodiment.It is illustrated in fig. 6 whole
Current circuit is roughly the same with the structure of the rectification circuit shown in Fig. 4, therefore details are not described herein again for same section, now will be different
Part is described as follows.In the present embodiment, rectification circuit includes a control module 15, and control module 15 is coupled to an AC power source
First end L and second end N, control module 15 is further coupled to the grid of four combination switches, and a third is arranged in control module 15
Reference voltage Vref 3, when the voltage of the first end L of AC power source is greater than third reference voltage Vref 3, control module control the
The enhancement type gallium nitride transistor S4 conducting of the enhancement type gallium nitride transistor S1 and the 4th combination switch 14 of one combination switch 11,
When the voltage of the second end N of AC power source is greater than third reference voltage Vref 3, control module 15 controls the second combination switch 12
Enhancement type gallium nitride transistor S2 and third combination switch 13 enhancement type gallium nitride transistor S3 conducting.Wherein in this implementation
In example, third reference voltage Vref 3 is big ground voltage, but the utility model is not limited thereto.
Fig. 7 is please referred to, Fig. 7 is the structural schematic diagram of the utility model rectification circuit fourth embodiment.It is illustrated in fig. 7 whole
Current circuit is roughly the same with the structure of the rectification circuit shown in Fig. 3, therefore details are not described herein again for same section, now will be different
Part is described as follows.In the present embodiment, two combination switches in rectification circuit have separately included a control module 15.By
Conduction impedance when enhancement type gallium nitride transistor S1, S2 are opened is smaller than diode D1, D2, when rectification circuit works normally
When, enhancement type gallium nitride transistor S1 or S2 are opened by certain time cooperation, so that electric current flows only through enhanced nitridation
Gallium transistor, and diode does not turn on, to reduce loss, improves the efficiency of circuit.Further, in some embodiments
In, the enhancement type gallium nitride crystal in enhancement type gallium nitride transistor S1 and the second combination switch 12 in the first combination switch 11
Opening for pipe S2 is controlled with shutdown by the control module in Fig. 5, and control module detects the drain voltage of combination switch, and root
Enhancement type gallium nitride transistor is opened or turned off according to drain voltage.
Fig. 8 is please referred to, Fig. 8 is the structural schematic diagram of the 5th embodiment of the utility model rectification circuit.It is illustrated in fig. 7 whole
Current circuit is roughly the same with the structure of the rectification circuit shown in Fig. 4, therefore details are not described herein again for same section, now will be different
Part is described as follows.In the present embodiment, rectification circuit includes four combination switches as shown in Figure 5, each combination switch packet
Containing a control module 15.When rectification circuit works normally, four are controlled by control module and compound opening and turning off.Due to increasing
Conduction impedance when strong type gallium nitride transistor is opened is smaller than diode, therefore shutdown enhancing is opened by certain time cooperation
Type gallium nitride transistor S1, S2, S3, S4, so that electric current flows through enhancement type gallium nitride transistor to reduce loss, to improve electricity
The efficiency on road.
In conclusion the utility model by by diode inverse parallel in enhancement type gallium nitride transistor come realize synchronize it is whole
Function is flowed, when surge current occurs in circuit start, inverse parallel is surge current in the diode of enhancement type gallium nitride transistor
Offer is released access, so that it is guaranteed that flowing through enhancement type gallium nitride transistor without surge current, avoids enhancement type gallium nitride crystalline substance
The problem of body pipe is punctured by surge current.After circuit works normally, enhancement type gallium nitride transistor is controlled by control module
Open and turn off so that electric current flow only through enhancement type gallium nitride transistor with reduce loss, to improve the efficiency of circuit.
Although the utility model is disclosed above with several embodiments, so it is not intended to limit the utility model, at this
Any tool usually intellectual in utility model technical field, without departing from the spirit and scope of the utility model, when
It can be used for a variety of modifications and variations, therefore the protection scope of the utility model is when the protection defined depending on appended claims
Subject to range.
Claims (19)
1. a kind of combination switch characterized by comprising
Enhancement type gallium nitride transistor has a grid, source electrode and drain electrode；And
Diode has an anode and cathode, and the cathode is electrically connected at the drain electrode, and the anode is electrically connected at described
Source electrode, so that the diode inverse parallel is connected to the enhancement type gallium nitride transistor；
Wherein, when not applying driving voltage between the grid and the source electrode, the forward conduction voltage drop of the diode is less than
Reverse-conducting pressure drop between the source electrode and the drain electrode of the enhancement type gallium nitride transistor.
2. combination switch as described in claim 1, which is characterized in that when surge current occur in the source electrode and the drain electrode
When, the diode is the release access of the surge current.
3. combination switch as described in claim 1, which is characterized in that the combination switch also includes control module, the control
The grid of enhancement type gallium nitride transistor described in module couples processed.
4. combination switch as claimed in claim 3, which is characterized in that the control module detects the drain electrode of the combination switch
Voltage controls the enhancement type gallium nitride transistor switch or closure according to the drain voltage output drive signal.
5. combination switch as claimed in claim 4, which is characterized in that one first reference voltage and one is arranged in the control module
Second reference voltage, wherein second reference voltage is higher than first reference voltage.
6. combination switch as claimed in claim 5, which is characterized in that in combination switch course of normal operation, when the leakage
When pole tension is lower than first reference voltage, the control module controls the enhancement type gallium nitride transistor turns；Work as institute
When stating drain voltage higher than second reference voltage, the control module controls the enhancement type gallium nitride transistor shutdown.
7. a kind of half-bridge bridge arm circuit structure, which is characterized in that including the first combination switch and the second combination switch, described first
Combination switch and the second combination switch are the described in any item combination switches of the claims 1-6, first combination switch
The drain electrode of source electrode and the enhancement type gallium nitride transistor of second combination switch of enhancement type gallium nitride transistor electrically connect
It connects.
8. a kind of rectification circuit for having boost function, which is characterized in that the first bridge arm of the rectification circuit is by claim 7 institute
The half-bridge bridge arm circuit structure stated is constituted, wherein the rectification circuit further includes one second bridge arm, including be one another in series one the
Three switching tubes and one the 4th switching tube, the second end of the third switching tube are connected simultaneously with the first end of the 4th switching tube
And the first end of an AC power source is coupled to by one first inductance element；First combination switch compound is opened with described second
The common end of pass is connected to the second end of the AC power source；And an output capacitance, one end of the output capacitance electrically connects
It is connected to the drain electrode of first combination switch, the other end of the output capacitance is electrically connected at the source of second combination switch
Pole.
9. rectification circuit as claimed in claim 8, which is characterized in that further include concatenated one first surge diode and one
Two surge diodes, the cathode of the first surge diode are connected to the first end of the third switching tube, second wave
The anode for gushing diode is connected to the second end of the 4th switching tube, the anode of the first surge diode and described second
The cathode of surge diode is connected to the first end of the AC power source.
10. rectification circuit as claimed in claim 9, which is characterized in that when the AC power source first end and second end it
Between when being forward voltage, surge current is successively via the first surge diode, the output capacitance and described second compound
The diode of switch forms Releasing loop.
11. rectification circuit as claimed in claim 9, which is characterized in that when the AC power source first end and second end it
Between when being negative voltage, surge current is successively via the diode of first combination switch, the output capacitance and described the
Two surge diodes form Releasing loop.
12. a kind of rectification circuit, which is characterized in that including the first combination switch, the second combination switch, third combination switch and
Four combination switches are electrically connected the full-bridge circuit structure constituted, and first combination switch, the second combination switch, third are multiple
Combination switch and the 4th combination switch are combination switch described in the claims 1.
13. rectification circuit as claimed in claim 12, which is characterized in that the enhancement type gallium nitride of first combination switch is brilliant
The drain electrode of the enhancement type gallium nitride transistor of the source electrode of body pipe and second combination switch is electrically connected to an AC power source
First end；The enhanced nitrogen of the source electrode of the enhancement type gallium nitride transistor of the third combination switch and the 4th combination switch
The drain electrode for changing gallium transistor is electrically connected to the second end of the AC power source；The enhancement type gallium nitride of first combination switch
The drain electrode of transistor is electrically connected one first output end with the drain electrode of the enhancement type gallium nitride transistor of the third combination switch
Son, the enhancement type gallium nitride of the source electrode of the enhancement type gallium nitride transistor of second combination switch and the 4th combination switch
The source electrode of transistor is electrically connected second output terminal.
14. rectification circuit as claimed in claim 13, which is characterized in that it further include a control module, the control module electricity
Property is coupled to the first end of the AC power source and the grid of second end and each combination switch, the control module root
Each combination switch is controlled respectively according to the voltage of the first end of the AC power source and the voltage of second end to open or close
It closes.
15. rectification circuit as claimed in claim 14, which is characterized in that a third reference voltage is arranged in the control module,
When the voltage of the first end of the AC power source is greater than the third reference voltage, the control module control described first is multiple
Combination switch and the 4th combination switch conducting, when the voltage of the second end of the AC power source is greater than the third reference voltage
When, the control module controls second combination switch and third combination switch conducting.
16. rectification circuit as claimed in claim 13, which is characterized in that each combination switch in the rectification circuit
It all include a control module, the control module is electrically connected to the grid of the enhancement type gallium nitride transistor.
17. rectification circuit as claimed in claim 16, which is characterized in that the control module detects the leakage of the combination switch
Pole tension controls the enhancement type gallium nitride transistor switch or closure according to the drain voltage output drive signal.
18. rectification circuit as claimed in claim 17, which is characterized in that the control module be arranged one first reference voltage and
One second reference voltage, wherein second reference voltage is higher than first reference voltage.
19. rectification circuit as claimed in claim 18, which is characterized in that in the rectification circuit course of normal operation, when
When the drain voltage is lower than first reference voltage, the enhancement type gallium nitride transistor turns；When the drain voltage
When higher than second reference voltage, the enhancement type gallium nitride transistor shutdown.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821854756.2U CN208849690U (en) | 2018-11-12 | 2018-11-12 | Combination switch, half-bridge bridge arm circuit structure and rectification circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821854756.2U CN208849690U (en) | 2018-11-12 | 2018-11-12 | Combination switch, half-bridge bridge arm circuit structure and rectification circuit |
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|---|---|
| CN208849690U true CN208849690U (en) | 2019-05-10 |
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Family Applications (1)
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|---|---|---|---|
| CN201821854756.2U Active CN208849690U (en) | 2018-11-12 | 2018-11-12 | Combination switch, half-bridge bridge arm circuit structure and rectification circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082683A (en) * | 2019-12-23 | 2020-04-28 | 湖南纵横空天能源科技有限公司 | Circuit applied to low-voltage and high-current occasions based on GaN device |
| US20210281189A1 (en) * | 2020-03-03 | 2021-09-09 | Navitas Semiconductor Limited | Active bridge rectifier |
-
2018
- 2018-11-12 CN CN201821854756.2U patent/CN208849690U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111082683A (en) * | 2019-12-23 | 2020-04-28 | 湖南纵横空天能源科技有限公司 | Circuit applied to low-voltage and high-current occasions based on GaN device |
| US20210281189A1 (en) * | 2020-03-03 | 2021-09-09 | Navitas Semiconductor Limited | Active bridge rectifier |
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