JPH04354156A - Semiconductor switching device - Google Patents

Semiconductor switching device

Info

Publication number
JPH04354156A
JPH04354156A JP3129474A JP12947491A JPH04354156A JP H04354156 A JPH04354156 A JP H04354156A JP 3129474 A JP3129474 A JP 3129474A JP 12947491 A JP12947491 A JP 12947491A JP H04354156 A JPH04354156 A JP H04354156A
Authority
JP
Japan
Prior art keywords
igbt
mosfet
switching device
semiconductor switching
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3129474A
Inventor
Masateru Igarashi
Shinichi Kobayashi
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP3129474A priority Critical patent/JPH04354156A/en
Publication of JPH04354156A publication Critical patent/JPH04354156A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4911Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1305Bipolar Junction Transistor [BJT]
    • H01L2924/13055Insulated gate bipolar transistor [IGBT]
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/13Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304Transistor
    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

PURPOSE:To realize a semiconductor switching device which can reduce its switching loss without increasing the number of its components. CONSTITUTION:This semiconductor switching device is provided with an IGBT 111 and MOSFET 112 using a high-speed diode 113 as its internal parasitic diode and the gate of the IGBT 111 is connected to a gate G5 through an input resistance 114a, with the gate of the MOSFET 112 being connected to the gate G5 through another input resistance 114b having a resistance value higher than that of the resistance 114a. Because of a voltage drop caused by the resistance values of the input resistances, the MOSFET 112 is turned off after the IGBT ill is turned off. The collector current of this semiconductor switching device is shared by both the IGBT 111 and MOSFET 112. The chips of the IGBT 111 and MOSFET 112 are connected in parallel with each other in a container.
JP3129474A 1991-05-31 1991-05-31 Semiconductor switching device Pending JPH04354156A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3129474A JPH04354156A (en) 1991-05-31 1991-05-31 Semiconductor switching device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3129474A JPH04354156A (en) 1991-05-31 1991-05-31 Semiconductor switching device

Publications (1)

Publication Number Publication Date
JPH04354156A true JPH04354156A (en) 1992-12-08

Family

ID=15010383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3129474A Pending JPH04354156A (en) 1991-05-31 1991-05-31 Semiconductor switching device

Country Status (1)

Country Link
JP (1) JPH04354156A (en)

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240497A (en) * 1993-09-15 1995-09-12 Internatl Rectifier Corp High power semiconductor device module and insulating metal board used therefor
JP2006344779A (en) * 2005-06-09 2006-12-21 Toyota Motor Corp Semiconductor device and control method therefor
JP2008079475A (en) * 2006-09-25 2008-04-03 Mitsubishi Electric Corp Semiconductor device
JP2009240027A (en) * 2008-03-26 2009-10-15 Mitsubishi Electric Corp Semiconductor-switching device and usage thereof
US20130133358A1 (en) * 2011-11-25 2013-05-30 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
JP2013125806A (en) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp Power semiconductor device
CN103580455A (en) * 2012-08-09 2014-02-12 青岛艾迪森科技有限公司 Non-voltage switching system of high-power switching tube
JP2014041852A (en) * 2012-08-21 2014-03-06 Mitsubishi Electric Corp Power module
JP2014090179A (en) * 2013-11-20 2014-05-15 Hitachi Ltd Circuit device having free-wheel diode, circuit module, and electric power conversion apparatus
JP2014130909A (en) * 2012-12-28 2014-07-10 Mitsubishi Electric Corp Semiconductor device for electric power
CN104247266A (en) * 2012-04-06 2014-12-24 三菱电机株式会社 Composite semiconductor switch device
JP2015149508A (en) * 2015-05-11 2015-08-20 三菱電機株式会社 Semiconductor device for electric power
WO2016000840A1 (en) * 2014-07-04 2016-01-07 Abb Technology Ag Power semiconductor module
WO2016063681A1 (en) * 2014-10-24 2016-04-28 富士電機株式会社 Semiconductor device
JP2017070051A (en) * 2015-09-29 2017-04-06 株式会社デンソー Load driving device
WO2017086201A1 (en) * 2015-11-16 2017-05-26 アイシン・エィ・ダブリュ株式会社 Electric power conversion device
US9787301B2 (en) 2015-07-17 2017-10-10 Fuji Electric Co., Ltd. Semiconductor switching device
JP2018029258A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
WO2018034137A1 (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit and motor drive control device
JP2018029434A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
JP2018029257A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
JP2018029433A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit and motor drive control device
JP2018029259A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
US10033378B2 (en) 2015-12-22 2018-07-24 Rolls-Royce Plc Apparatus and method for solid state power control of current load
US10050105B2 (en) 2016-01-12 2018-08-14 Fuji Electric Co., Ltd. Semiconductor device
US10218351B2 (en) 2017-04-18 2019-02-26 Denso Corporation Parallel driving circuit of voltage-driven type semiconductor element
US10236677B2 (en) 2014-10-31 2019-03-19 Fuji Electric Co., Ltd. Semiconductor device
US10288673B2 (en) 2015-09-17 2019-05-14 Fuji Electric Co., Ltd. Semiconductor device and method of measuring the same

Cited By (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07240497A (en) * 1993-09-15 1995-09-12 Internatl Rectifier Corp High power semiconductor device module and insulating metal board used therefor
JP2006344779A (en) * 2005-06-09 2006-12-21 Toyota Motor Corp Semiconductor device and control method therefor
JP4675302B2 (en) * 2006-09-25 2011-04-20 三菱電機株式会社 Semiconductor device
JP2008079475A (en) * 2006-09-25 2008-04-03 Mitsubishi Electric Corp Semiconductor device
US7830196B2 (en) 2006-09-25 2010-11-09 Mitsubishi Electric Corporation Semiconductor device alleviating or preventing surge voltage
JP2009240027A (en) * 2008-03-26 2009-10-15 Mitsubishi Electric Corp Semiconductor-switching device and usage thereof
US20130133358A1 (en) * 2011-11-25 2013-05-30 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
US8884560B2 (en) * 2011-11-25 2014-11-11 Mitsubishi Electric Corporation Inverter device and air conditioner including the same
JP2013125806A (en) * 2011-12-14 2013-06-24 Mitsubishi Electric Corp Power semiconductor device
US9106156B2 (en) 2011-12-14 2015-08-11 Mitsubishi Electric Corporation Power semiconductor device
CN104247266B (en) * 2012-04-06 2017-05-17 三菱电机株式会社 Composite semiconductor switch device
CN104247266A (en) * 2012-04-06 2014-12-24 三菱电机株式会社 Composite semiconductor switch device
CN103580455A (en) * 2012-08-09 2014-02-12 青岛艾迪森科技有限公司 Non-voltage switching system of high-power switching tube
CN103633077A (en) * 2012-08-21 2014-03-12 三菱电机株式会社 Power module
JP2014041852A (en) * 2012-08-21 2014-03-06 Mitsubishi Electric Corp Power module
KR101428528B1 (en) * 2012-08-21 2014-08-11 미쓰비시덴키 가부시키가이샤 Power module
US8970261B2 (en) 2012-08-21 2015-03-03 Mitsubishi Electric Corporation Power module
US9041456B2 (en) 2012-12-28 2015-05-26 Mitsubishi Electric Corporation Power semiconductor device
JP2014130909A (en) * 2012-12-28 2014-07-10 Mitsubishi Electric Corp Semiconductor device for electric power
JP2014090179A (en) * 2013-11-20 2014-05-15 Hitachi Ltd Circuit device having free-wheel diode, circuit module, and electric power conversion apparatus
WO2016000840A1 (en) * 2014-07-04 2016-01-07 Abb Technology Ag Power semiconductor module
US9881916B2 (en) 2014-10-24 2018-01-30 Fuji Electric Co., Ltd. Semiconductor device
JPWO2016063681A1 (en) * 2014-10-24 2017-04-27 富士電機株式会社 Semiconductor device
WO2016063681A1 (en) * 2014-10-24 2016-04-28 富士電機株式会社 Semiconductor device
US10236677B2 (en) 2014-10-31 2019-03-19 Fuji Electric Co., Ltd. Semiconductor device
JP2015149508A (en) * 2015-05-11 2015-08-20 三菱電機株式会社 Semiconductor device for electric power
US9787301B2 (en) 2015-07-17 2017-10-10 Fuji Electric Co., Ltd. Semiconductor switching device
US10288673B2 (en) 2015-09-17 2019-05-14 Fuji Electric Co., Ltd. Semiconductor device and method of measuring the same
JP2017070051A (en) * 2015-09-29 2017-04-06 株式会社デンソー Load driving device
WO2017057079A1 (en) * 2015-09-29 2017-04-06 株式会社デンソー Load driving device
WO2017086201A1 (en) * 2015-11-16 2017-05-26 アイシン・エィ・ダブリュ株式会社 Electric power conversion device
CN108370223A (en) * 2015-11-16 2018-08-03 爱信艾达株式会社 Power inverter
JPWO2017086201A1 (en) * 2015-11-16 2018-06-14 アイシン・エィ・ダブリュ株式会社 Power converter
US10404188B2 (en) 2015-11-16 2019-09-03 Aisin Aw Co., Ltd. Power conversion devices
US10033378B2 (en) 2015-12-22 2018-07-24 Rolls-Royce Plc Apparatus and method for solid state power control of current load
US10050105B2 (en) 2016-01-12 2018-08-14 Fuji Electric Co., Ltd. Semiconductor device
JP2018029259A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
JP2018029257A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
JP2018029434A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
WO2018034137A1 (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit and motor drive control device
JP2018029258A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit
JP2018029433A (en) * 2016-08-17 2018-02-22 株式会社デンソー Transistor drive circuit and motor drive control device
US10218351B2 (en) 2017-04-18 2019-02-26 Denso Corporation Parallel driving circuit of voltage-driven type semiconductor element

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