CN216162692U - Gate pole circuit for IGBT drive protection - Google Patents
Gate pole circuit for IGBT drive protection Download PDFInfo
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- CN216162692U CN216162692U CN202121834308.8U CN202121834308U CN216162692U CN 216162692 U CN216162692 U CN 216162692U CN 202121834308 U CN202121834308 U CN 202121834308U CN 216162692 U CN216162692 U CN 216162692U
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Abstract
The utility model provides a gate pole circuit for IGBT drive protection; comprises an optical coupler 6N137, a driving module EXB481 and a timer NE 555P; the pin 1 of the driving module EXB481 is electrically connected with an insulated gate bipolar transistor VIG, the pin 1 of the driving module EXB481 is electrically connected with a collector of the insulated gate bipolar transistor VIG, the pin 3 of the driving module EXB481 is electrically connected with a resistor Rg, one end of the resistor Rg, which is far away from the driving module EXB481, is electrically connected with a base of the insulated gate bipolar transistor VIG, the pin 6 of the driving module EXB481 is connected with a diode VD1 and a voltage stabilizing diode VZ3 in series, and one end of the voltage stabilizing diode VZ3, which is far away from the diode VD1, is electrically connected with an emitter of the driving module EXB 481. According to the utility model, the ultra-fast recovery diode VD1 of the No. 6 pin of the drive module EXB841 is replaced by an ultra-fast recovery diode with a larger conduction voltage drop or a voltage stabilizing diode connected in series in the reverse direction, so that a low-output and large-power consumption state under the condition of an IGBT (insulated gate bipolar translator) with an excessively narrow pulse width is avoided, and a dead zone is avoided.
Description
Technical Field
The utility model relates to the technical field of IGBT (insulated gate bipolar transistor) drive protection, in particular to a gate pole circuit for IGBT drive protection.
Background
IGB insulated gate bipolar transistor is a composite fully-controlled voltage-driven power semiconductor device composed of bipolar triode and insulated gate field effect transistor, has the advantages of high input impedance of MOSFET and low conduction voltage drop of GTR, has small driving power and reduced saturation voltage, and is very suitable for being applied to the fields of converter systems with direct current voltage of 600V or more, such as alternating current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.
The gate pole circuit of the existing IGBT drive protection has a protection blind area, the conduction time ton of a general high-power IGBT is about 1us, and actually, the tail voltage is slowly reduced when the IGBT is conducted. Therefore, it is desirable to design a gate circuit for IGBT driving protection to solve the above problems.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects of the prior art, adapt to the practical requirements and provide a gate electrode circuit for IGBT drive protection.
In order to realize the purpose of the utility model, the technical scheme adopted by the utility model is as follows:
a gate circuit for IGBT drive protection comprises an optocoupler 6N137, a drive module EXB481 and a timer NE 555P; the pin 1 of the driving module EXB481 is electrically connected with an insulated gate bipolar transistor VIG, the pin 1 of the driving module EXB481 is electrically connected with a collector of the insulated gate bipolar transistor VIG, the pin 3 of the driving module EXB481 is electrically connected with a resistor Rg, one end of the resistor Rg far away from the driving module EXB481 is electrically connected with a base of the insulated gate bipolar transistor VIG, the pin 6 of the driving module EXB481 is connected with a diode VD1 and a voltage stabilizing diode VZ3 in series, one end of the voltage stabilizing diode VZ3 far away from the diode VD1 is electrically connected with an emitter of the driving module EXB481, the pin 2 of the driving module EXB481 is electrically connected with a capacitor C2, one end of the capacitor C2 far away from the pin 2 of the driving module EXB481 is electrically connected with the pin 3 of the driving module EXB481, a positive voltage is applied to the pin 2 of the driving module EXB481, the pin 9 of the driving module EXB is connected with a voltage stabilizing diode VZ4 and a voltage 1 in parallel, a resistor R1 is connected in series with one end of the voltage stabilizing diode VZ4 and the capacitor C1, which is far away from the No. 9 pin of the driving module EXB481, one end of the resistor R1, which is far away from the voltage stabilizing diode VZ4 and the capacitor C1, is electrically connected to the No. 2 pin of the driving module EXB481, a voltage stabilizing diode VZ5 and a capacitor C3 are connected in parallel with the No. 9 pin of the driving module EXB481, one ends of the voltage stabilizing diode VZ5 and the capacitor C3, which are far away from the No. 9 pin of the driving module EXB481, a grounding wire between the capacitor C3 and the No. 9 pin of the driving module EXB481, a resistor Rge and a voltage stabilizing diode VZ1 are connected in parallel with the No. 1 pin of the driving module EXB481, one end of the voltage stabilizing diode VZ1, which is far away from the No. 1 pin of the driving module EXB481, is electrically connected to a voltage stabilizing diode VZ2, and one end of the voltage stabilizing diode VZ2 and one end of the bipolar type VIG are electrically connected to an insulated gate wire between the resistor Rge and the VIG, the pin 5 of the driving module EXB481 is electrically connected with a variable resistor R, one end of the variable resistor R, which is far away from the pin 5 of the driving module EXB481, is electrically connected with the pin 4 of the driving module EXB481, the pin 4 of the driving module EXB481 is electrically connected with a capacitor C4, one end of the capacitor C4, which is far away from the pin 4 of the driving module EXB481, is electrically connected with the pin 14 of the driving module EXB481, and the pin 14 of the driving module EXB481 is grounded through a conducting wire.
Furthermore, a pin 8 of the optical coupler 6N137 is electrically connected to a resistor R4, one end of the resistor R4 is electrically connected to a transistor V1, the resistor R4 is electrically connected to a collector of the transistor V1, the other end of the resistor R4 is electrically connected to a capacitor C9, the capacitor C9 is electrically connected to an emitter of the transistor V1, and a base of the transistor V1 is electrically connected to a pin 6 of the optical coupler 6N 137.
Further, a pin No. 15 of the driving module EXB481 is electrically connected to an and gate, one input end of the and gate is electrically connected to a pin No. 555P of the timer, and the other output end of the and gate is electrically connected to an or gate, and one input end of the or gate is electrically connected to a collector of the triode V1.
Furthermore, pin No. 4 and pin No. 8 of the timer NE555P are both electrically connected to a wire between the capacitor C9 and the resistor R4, pin No. 7 of the timer NE555P is electrically connected to a diode, one end of the diode is electrically connected to a wire between the capacitor C9 and the resistor R4, and pin No. 7 of the timer NE555P is electrically connected to pin No. 6 of the timer NE555P through a wire.
Furthermore, pin No. 1 of the timer NE555P is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, pin No. 5 of the timer NE555P is electrically connected to the capacitor C7, the capacitor C7 is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, pin No. 2 of the timer NE555P is electrically connected to the capacitor C6 and the resistor R5, the capacitor C6 is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, and the resistor R5 is electrically connected to the collector of the transistor V1.
Furthermore, a resistor R6 and a capacitor C8 are connected in series on a lead between the resistor R4 and the remaining capacitor C9, and one end of the capacitor C8 and the lead are electrically connected between the capacitor C9 and an emitter of the triode V1.
Furthermore, a resistor R3 is electrically connected to pin No. 8 of the photo-coupler 6N137, one end of the resistor R3 is electrically connected to pin No. 6 of the photo-coupler 6N137, and a positive voltage is applied to the other end of the resistor R3, a resistor R2 is electrically connected to pin No. 2 of the photo-coupler 6N137, and a positive voltage is applied to one end of the resistor R2, which is far away from pin No. 2 of the photo-coupler 6N 137.
The utility model has the beneficial effects that:
according to the utility model, the ultra-fast recovery diode VD1 of the No. 6 pin of the drive module EXB841 is replaced by an ultra-fast recovery diode with a larger conduction voltage drop or a voltage stabilizing diode connected in series in the reverse direction, so that a low-output and large-power consumption state under the condition of an IGBT (insulated gate bipolar translator) with an excessively narrow pulse width is avoided, and a dead zone is further avoided.
According to the utility model, a variable resistor is connected between the pin 5 and the pin 4 of the drive module EXB841, and a capacitor is connected between the pin 4 and the ground wire, so that the turn-off time can be adjusted, the reliability of soft turn-off is ensured, and the occurrence of significance condition is avoided.
Drawings
FIG. 1 is a schematic structural view of the present invention;
Detailed Description
The utility model is further illustrated with reference to the following figures and examples:
referring to fig. 1, the present invention is a gate circuit for IGBT drive protection, including an optocoupler 6N137, a drive module EXB481, and a timer NE 555P; the pin 1 of the driving module EXB481 is electrically connected with an insulated gate bipolar transistor VIG, the pin 1 of the driving module EXB481 is electrically connected with a collector of the insulated gate bipolar transistor VIG, the pin 3 of the driving module EXB481 is electrically connected with a resistor Rg, one end of the resistor Rg far away from the driving module EXB481 is electrically connected with a base of the insulated gate bipolar transistor VIG, the pin 6 of the driving module EXB481 is connected with a diode VD1 and a zener diode VZ3 in series, one end of the zener diode VZ3 far away from the diode VD1 is electrically connected with an emitter of the driving module EXB481, the pin 2 of the driving module EXB481 is electrically connected with a capacitor C2, one end of the capacitor C2 far away from the pin 2 of the driving module EXB481 is electrically connected with the pin 3 of the driving module EXB481, a positive voltage is applied to the pin 2 of the driving module EXB481, the pin 9 of the driving module EXB481 is connected with a zener diode VZ4 and a capacitor C1 in parallel, a resistor R1 is connected in series with one end of the voltage stabilizing diode VZ4 and the capacitor C1, which is far away from the No. 9 pin of the driving module EXB481, one end of the resistor R1, which is far away from the voltage stabilizing diode VZ4 and the capacitor C1, is electrically connected to the No. 2 pin of the driving module EXB481, a voltage stabilizing diode VZ5 and a capacitor C3 are connected in parallel with the No. 9 pin of the driving module EXB481, one end of the voltage stabilizing diode VZ5 and one end of the capacitor C3, which is far away from the No. 9 pin of the driving module EXB481, a wire between the capacitor C3 and the No. 9 pin of the driving module EXB481 is grounded, a resistor Rge and a voltage stabilizing diode VZ1 are connected in parallel with the No. 1 pin of the driving module EXB481, one end of the voltage stabilizing diode VZ1, which is far away from the No. 1 pin of the driving module EXB481, is electrically connected with a voltage stabilizing diode VZ2, one end of the voltage stabilizing diode VZ2 and one end of the resistor Rge are electrically connected to a bipolar type VIG, the pin 5 of the driving module EXB481 is electrically connected with a variable resistor R, one end of the variable resistor R, which is far away from the pin 5 of the driving module EXB481, is electrically connected with the pin 4 of the driving module EXB481, the pin 4 of the driving module EXB481 is electrically connected with a capacitor C4, one end of the capacitor C4, which is far away from the pin 4 of the driving module EXB481, is electrically connected with the pin 14 of the driving module EXB481, and the pin 14 of the driving module EXB481 is grounded through a conducting wire.
The No. 8 pin of the optical coupler 6N137 is electrically connected with a resistor R4, one end of a resistor R4 is electrically connected with a triode V1, a resistor R4 is electrically connected with a collector of a triode V1, the other end of the resistor R4 is electrically connected with a capacitor C9, a capacitor C9 is electrically connected with an emitter of the triode V1, and a base of a triode V1 is electrically connected with the No. 6 pin of the optical coupler 6N 137.
The pin No. 15 of the driving module EXB481 is electrically connected to an and gate, one input end of the and gate is electrically connected to the pin No. 15 of the timer NE555P, the other output end of the and gate is electrically connected to an or gate, and one input end of the or gate is electrically connected to a collector of the triode V1.
Pin No. 1 of timer NE555P is electrically connected to the wire between capacitor C9 and the emitter of transistor V1, pin No. 5 of timer NE555P is electrically connected to capacitor C7, and capacitor C7 is electrically connected to the wire between capacitor C9 and the emitter of transistor V1, pin No. 2 of timer NE555P is electrically connected to capacitor C6 and resistor R5, capacitor C6 is electrically connected to the wire between capacitor C9 and the emitter of transistor V1, and resistor R5 is electrically connected to the collector of transistor V1.
The resistor R4 and the capacitor C9 are connected in series with the resistor R6 and the capacitor C8, and one end of the capacitor C8 is electrically connected with the conductor between the capacitor C9 and the emitter of the triode V1.
The No. 8 pin of the optocoupler 6N137 is electrically connected with a resistor R3, one end of the resistor R3 is electrically connected with the No. 6 pin of the optocoupler 6N137, the other end of the resistor R3 is applied with positive voltage, the No. 2 pin of the optocoupler 6N137 is electrically connected with a resistor R2, and one end of the resistor R2, which is far away from the No. 2 pin of the optocoupler 6N137, is applied with positive voltage.
The working principle of the utility model is as follows: in use, when the drive module EXB841 detects an overcurrent, pin No. 5 of the drive module EXB841 changes to low level, so that the opto-coupler is turned on to make the V1 cut-off positive voltage charge C6 through R4 and R5, after 5 μ s, pin No. 3 of the timer NE555P outputs low level, the input signal is blocked through the and gate, because the drive module EXB841 needs 10 μ s from detecting the IGBT overcurrent to finishing soft turn-off, the circuit works for 5 μ s because the EXB841 detects the overcurrent and stops the input signal after 5 μ s through the timer NE555P to make the IGBT soft turn-off because 5 μ s is delayed from detecting the overcurrent to the drive module EXB841 for 5 μ s, and hard turn-off caused by immediately stopping the input signal is avoided.
The embodiments of the present invention are disclosed as the preferred embodiments, but not limited thereto, and those skilled in the art can easily understand the spirit of the present invention and make various extensions and changes without departing from the spirit of the present invention.
Claims (7)
1. A gate circuit for IGBT drive protection comprises an optocoupler 6N137, a drive module EXB481 and a timer NE 555P; the method is characterized in that: the pin 1 of the driving module EXB481 is electrically connected with an insulated gate bipolar transistor VIG, the pin 1 of the driving module EXB481 is electrically connected with a collector of the insulated gate bipolar transistor VIG, the pin 3 of the driving module EXB481 is electrically connected with a resistor Rg, one end of the resistor Rg far away from the driving module EXB481 is electrically connected with a base of the insulated gate bipolar transistor VIG, the pin 6 of the driving module EXB481 is connected with a diode VD1 and a voltage stabilizing diode VZ3 in series, one end of the voltage stabilizing diode VZ3 far away from the diode VD1 is electrically connected with an emitter of the driving module EXB481, the pin 2 of the driving module EXB481 is electrically connected with a capacitor C2, one end of the capacitor C2 far away from the pin 2 of the driving module EXB481 is electrically connected with the pin 3 of the driving module EXB481, a positive voltage is applied to the pin 2 of the driving module EXB481, the pin 9 of the driving module EXB is connected with a voltage stabilizing diode VZ4 and a voltage 1 in parallel, a resistor R1 is connected in series with one end of the voltage stabilizing diode VZ4 and the capacitor C1, which is far away from the No. 9 pin of the driving module EXB481, one end of the resistor R1, which is far away from the voltage stabilizing diode VZ4 and the capacitor C1, is electrically connected to the No. 2 pin of the driving module EXB481, a voltage stabilizing diode VZ5 and a capacitor C3 are connected in parallel with the No. 9 pin of the driving module EXB481, one ends of the voltage stabilizing diode VZ5 and the capacitor C3, which are far away from the No. 9 pin of the driving module EXB481, a grounding wire between the capacitor C3 and the No. 9 pin of the driving module EXB481, a resistor Rge and a voltage stabilizing diode VZ1 are connected in parallel with the No. 1 pin of the driving module EXB481, one end of the voltage stabilizing diode VZ1, which is far away from the No. 1 pin of the driving module EXB481, is electrically connected to a voltage stabilizing diode VZ2, and one end of the voltage stabilizing diode VZ2 and one end of the bipolar type VIG are electrically connected to an insulated gate wire between the resistor Rge and the VIG, the pin 5 of the driving module EXB481 is electrically connected with a variable resistor R, one end of the variable resistor R, which is far away from the pin 5 of the driving module EXB481, is electrically connected with the pin 4 of the driving module EXB481, the pin 4 of the driving module EXB481 is electrically connected with a capacitor C4, one end of the capacitor C4, which is far away from the pin 4 of the driving module EXB481, is electrically connected with the pin 14 of the driving module EXB481, and the pin 14 of the driving module EXB481 is grounded through a conducting wire.
2. The IGBT drive protection gate circuit of claim 1, wherein: the No. 8 pin of the optical coupler 6N137 is electrically connected with a resistor R4, one end of the resistor R4 is electrically connected with a triode V1, the resistor R4 is electrically connected with a collector of the triode V1, the other end of the resistor R4 is electrically connected with a capacitor C9, the capacitor C9 is electrically connected with an emitter of the triode V1, and a base of the triode V1 is electrically connected with the No. 6 pin of the optical coupler 6N 137.
3. The IGBT drive protection gate circuit of claim 2, wherein: an and gate is electrically connected to a pin No. 15 of the driving module EXB481, one input end of the and gate is electrically connected to a pin No. 15 of the timer NE555P, the other output end of the and gate is electrically connected to an or gate, and one input end of the or gate is electrically connected to a collector of the triode V1.
4. The IGBT drive protection gate circuit of claim 2, wherein: no. 4 pin and No. 8 pin of the timer NE555P are both electrically connected to a lead between the capacitor C9 and the resistor R4, No. 7 pin of the timer NE555P is electrically connected to a diode, one end of the diode is electrically connected to a lead between the capacitor C9 and the resistor R4, and No. 7 pin of the timer NE555P is electrically connected to No. 6 pin of the timer NE555P through a lead.
5. The IGBT drive protection gate circuit of claim 2, wherein: pin No. 1 of the timer NE555P is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, pin No. 5 of the timer NE555P is electrically connected to the capacitor C7, the capacitor C7 is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, pin No. 2 of the timer NE555P is electrically connected to the capacitor C6 and the resistor R5, the capacitor C6 is electrically connected to a wire between the capacitor C9 and the emitter of the transistor V1, and the resistor R5 is electrically connected to the collector of the transistor V1.
6. The IGBT drive protection gate circuit of claim 2, wherein: the resistor R4 and the rest of the capacitor C9 are connected in series with a resistor R6 and a capacitor C8, and one end of the capacitor C8 and the rest of the resistor R4 are electrically connected with a wire between the capacitor C9 and the emitter of the triode V1.
7. The IGBT drive protection gate circuit of claim 1, wherein: the No. 8 pin of the optical coupler 6N137 is electrically connected with a resistor R3, one end of the resistor R3 is electrically connected with the No. 6 pin of the optical coupler 6N137, the other end of the resistor R3 is applied with positive voltage, the No. 2 pin of the optical coupler 6N137 is electrically connected with a resistor R2, and one end, away from the No. 2 pin of the optical coupler 6N137, of the resistor R2 is applied with positive voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121834308.8U CN216162692U (en) | 2021-08-06 | 2021-08-06 | Gate pole circuit for IGBT drive protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121834308.8U CN216162692U (en) | 2021-08-06 | 2021-08-06 | Gate pole circuit for IGBT drive protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216162692U true CN216162692U (en) | 2022-04-01 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121834308.8U Active CN216162692U (en) | 2021-08-06 | 2021-08-06 | Gate pole circuit for IGBT drive protection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216162692U (en) |
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2021
- 2021-08-06 CN CN202121834308.8U patent/CN216162692U/en active Active
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