CN109686390B - 差分电压发生器 - Google Patents
差分电压发生器 Download PDFInfo
- Publication number
- CN109686390B CN109686390B CN201810796399.7A CN201810796399A CN109686390B CN 109686390 B CN109686390 B CN 109686390B CN 201810796399 A CN201810796399 A CN 201810796399A CN 109686390 B CN109686390 B CN 109686390B
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- CN
- China
- Prior art keywords
- voltage
- transistor
- target voltage
- initial target
- biasing element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/59—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load
- G05F1/595—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices including plural semiconductor devices as final control devices for a single load semiconductor devices connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4094—Bit-line management or control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
- H03K17/164—Soft switching using parallel switching arrangements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/002—Isolation gates, i.e. gates coupling bit lines to the sense amplifier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/005—Transfer gates, i.e. gates coupling the sense amplifier output to data lines, I/O lines or global bit lines
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Logic Circuits (AREA)
- Amplifiers (AREA)
- Dram (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/788,289 US10192590B1 (en) | 2017-10-19 | 2017-10-19 | Differential voltage generator |
US15/788,289 | 2017-10-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN109686390A CN109686390A (zh) | 2019-04-26 |
CN109686390B true CN109686390B (zh) | 2023-07-07 |
Family
ID=65032219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810796399.7A Active CN109686390B (zh) | 2017-10-19 | 2018-07-19 | 差分电压发生器 |
Country Status (3)
Country | Link |
---|---|
US (1) | US10192590B1 (zh) |
CN (1) | CN109686390B (zh) |
TW (1) | TWI675272B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7391791B2 (ja) * | 2020-08-12 | 2023-12-05 | 株式会社東芝 | 定電圧回路 |
TWI788756B (zh) * | 2021-01-15 | 2023-01-01 | 瑞昱半導體股份有限公司 | 電壓產生電路及相關電容充電方法和系統 |
CN114815940B (zh) * | 2021-01-22 | 2024-01-30 | 瑞昱半导体股份有限公司 | 电压产生电路及相关电容充电方法和系统 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5805012A (en) * | 1995-05-25 | 1998-09-08 | Samsung Electronics Co., Ltd. | Systems and methods for compensating a buffer for power supply fluctuation |
JPH11338563A (ja) * | 1998-05-27 | 1999-12-10 | Matsushita Electric Ind Co Ltd | バッファ装置 |
US8773920B2 (en) * | 2012-02-21 | 2014-07-08 | International Business Machines Corporation | Reference generator with programmable M and B parameters and methods of use |
US9046909B2 (en) * | 2011-09-02 | 2015-06-02 | Rambus Inc. | On-chip regulator with variable load compensation |
CN108074608A (zh) * | 2016-11-08 | 2018-05-25 | 格芯公司 | 用于静态随机存取存储器(sram)自定时器的挠曲电路 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6509858B2 (en) | 2000-12-21 | 2003-01-21 | Intel Corporation | Differential voltage reference buffer |
JP3818231B2 (ja) * | 2002-07-12 | 2006-09-06 | 株式会社デンソー | 電源回路 |
US6754123B2 (en) * | 2002-10-01 | 2004-06-22 | Hewlett-Packard Development Company, Lp. | Adjustable current mode differential amplifier for multiple bias point sensing of MRAM having diode isolation |
US7349681B2 (en) * | 2004-07-13 | 2008-03-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-biased high-speed receiver |
US7262652B2 (en) * | 2004-12-21 | 2007-08-28 | Matsushita Electric Industrial Co., Ltd. | Current driver, data driver, and display device |
DE102005027164A1 (de) * | 2005-06-13 | 2006-12-21 | Robert Bosch Gmbh | Verfahren zum Versorgen von elektrischen Schaltungseinheiten mit elektrischer Energie und Versorgungsvorrichtung zur Durchführung des Verfahrens |
US7307447B2 (en) * | 2005-10-27 | 2007-12-11 | International Business Machines Corporation | Self series terminated serial link transmitter having segmentation for amplitude, pre-emphasis, and slew rate control and voltage regulation for amplitude accuracy and high voltage protection |
JP4843472B2 (ja) * | 2006-03-13 | 2011-12-21 | 株式会社東芝 | 電圧発生回路 |
TW200908526A (en) * | 2007-08-09 | 2009-02-16 | Ind Tech Res Inst | DC-DC converter |
US20090200999A1 (en) * | 2008-02-08 | 2009-08-13 | Mediatek Inc. | Voltage regulator with compensation and the method thereof |
CN101295187B (zh) * | 2008-02-29 | 2010-09-15 | 上海大学 | 压控电流源及其双极性可控电源 |
US20100001704A1 (en) * | 2008-07-07 | 2010-01-07 | Advanced Analogic Technologies, Inc. | Programmable Step-Down Switching Voltage Regulators with Adaptive Power MOSFETs |
US7936298B2 (en) * | 2009-09-18 | 2011-05-03 | Mediatek Singapore Pte. Ltd. | Integrated circuit and electronic device comprising threshold generation circuitry and method therefor |
US8390264B2 (en) | 2010-03-23 | 2013-03-05 | Himax Technologies Limited | Differential reference voltage generator |
TWI404311B (zh) * | 2010-10-28 | 2013-08-01 | Richtek Technology Corp | 電流模式控制電源轉換器的控制電路及方法 |
US8878513B2 (en) * | 2011-02-16 | 2014-11-04 | Mediatek Singapore Pte. Ltd. | Regulator providing multiple output voltages with different voltage levels |
JP2012203931A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 半導体記憶装置 |
JP6115168B2 (ja) * | 2012-06-25 | 2017-04-19 | 株式会社リコー | 電源装置、電源制御装置及び画像形成装置 |
JP2014078302A (ja) | 2012-10-11 | 2014-05-01 | Panasonic Corp | クロスポイント型抵抗変化不揮発性記憶装置及びクロスポイント型抵抗変化不揮発性記憶装置の読み出し方法 |
JP6140004B2 (ja) * | 2013-06-25 | 2017-05-31 | 富士通テン株式会社 | 電圧出力回路、及び、車両制御システム |
US9000837B1 (en) | 2013-11-05 | 2015-04-07 | International Business Machines Corporation | Adjustable reference voltage generator for single-ended DRAM sensing devices |
WO2015136413A1 (en) * | 2014-03-12 | 2015-09-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9563222B2 (en) * | 2014-05-08 | 2017-02-07 | Varian Medical Systems, Inc. | Differential reference signal distribution method and system |
JP5976077B2 (ja) | 2014-11-14 | 2016-08-23 | 力晶科技股▲ふん▼有限公司 | 内部電源電圧発生回路、半導体記憶装置及び半導体装置 |
-
2017
- 2017-10-19 US US15/788,289 patent/US10192590B1/en active Active
-
2018
- 2018-04-30 TW TW107114680A patent/TWI675272B/zh not_active IP Right Cessation
- 2018-07-19 CN CN201810796399.7A patent/CN109686390B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5805012A (en) * | 1995-05-25 | 1998-09-08 | Samsung Electronics Co., Ltd. | Systems and methods for compensating a buffer for power supply fluctuation |
JPH11338563A (ja) * | 1998-05-27 | 1999-12-10 | Matsushita Electric Ind Co Ltd | バッファ装置 |
US9046909B2 (en) * | 2011-09-02 | 2015-06-02 | Rambus Inc. | On-chip regulator with variable load compensation |
US8773920B2 (en) * | 2012-02-21 | 2014-07-08 | International Business Machines Corporation | Reference generator with programmable M and B parameters and methods of use |
CN108074608A (zh) * | 2016-11-08 | 2018-05-25 | 格芯公司 | 用于静态随机存取存储器(sram)自定时器的挠曲电路 |
Also Published As
Publication number | Publication date |
---|---|
TWI675272B (zh) | 2019-10-21 |
US10192590B1 (en) | 2019-01-29 |
TW201917508A (zh) | 2019-05-01 |
CN109686390A (zh) | 2019-04-26 |
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TA01 | Transfer of patent application right |
Effective date of registration: 20201014 Address after: Singapore City Applicant after: Marvell Asia Pte. Ltd. Address before: Greater Cayman Islands, British Cayman Islands Applicant before: Kawam International Inc. Effective date of registration: 20201014 Address after: Greater Cayman Islands, British Cayman Islands Applicant after: Kawam International Inc. Address before: Hamilton, Bermuda Applicant before: Marvell International Ltd. Effective date of registration: 20201014 Address after: Hamilton, Bermuda Applicant after: MARVELL INTERNATIONAL Ltd. Address before: Greater Cayman Islands, British Cayman Islands Applicant before: GLOBALFOUNDRIES INC. |
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