CN109659407A - A kind of GaN base light emitting epitaxial wafer and preparation method thereof - Google Patents
A kind of GaN base light emitting epitaxial wafer and preparation method thereof Download PDFInfo
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- CN109659407A CN109659407A CN201811288866.1A CN201811288866A CN109659407A CN 109659407 A CN109659407 A CN 109659407A CN 201811288866 A CN201811288866 A CN 201811288866A CN 109659407 A CN109659407 A CN 109659407A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 49
- 239000010980 sapphire Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 15
- 230000012010 growth Effects 0.000 claims description 80
- 238000000151 deposition Methods 0.000 claims description 16
- 239000012495 reaction gas Substances 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 6
- 239000007792 gaseous phase Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 19
- 238000005516 engineering process Methods 0.000 abstract description 3
- 229910002601 GaN Inorganic materials 0.000 description 173
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 173
- 239000000463 material Substances 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 230000007773 growth pattern Effects 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 230000003698 anagen phase Effects 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Chemical group 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 210000001367 artery Anatomy 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000010437 gem Substances 0.000 description 1
- 229910001751 gemstone Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 125000001967 indiganyl group Chemical group [H][In]([H])[*] 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- LALRXNPLTWZJIJ-UHFFFAOYSA-N triethylborane Chemical group CCB(CC)CC LALRXNPLTWZJIJ-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 210000003462 vein Anatomy 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Microelectronics & Electronic Packaging (AREA)
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- Led Devices (AREA)
Abstract
The invention discloses a kind of GaN base light emitting epitaxial wafers and preparation method thereof, belong to LED technology field.The described method includes: providing substrate, the substrate is graphical sapphire substrate, and the bottom width of the graphical sapphire substrate is equal to or more than 2.9 microns；Buffer layer over the substrate；GaN nucleating layer is deposited on the buffer layer, the GaN nucleating layer includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, and the high-temperature low-pressure GaN layer is between the buffer layer and the cryogenic high pressure GaN layer；GaN high temperature is sequentially deposited on the GaN nucleating layer fills and leads up layer, layer of undoped gan, N-type layer, multiple quantum well layer and P-type layer.
Description
Technical field
The present invention relates to LED technology field, in particular to a kind of GaN base light emitting epitaxial wafer and its system
Preparation Method.
Background technique
GaN (gallium nitride) is the Typical Representative of third generation semiconductor material with wide forbidden band, has excellent high heat conductance, resistance to height
The special types such as temperature, acid and alkali-resistance, high rigidity are widely used in making blue, green and UV LED.GaN base light-emitting diodes
Pipe generally includes epitaxial wafer and the electrode on epitaxial wafer.
The epitaxial wafer of existing a kind of GaN base light emitting comprising substrate and successively grow on substrate slow
Rush layer, GaN nucleating layer, fill and lead up layer, undoped GaN layer, N-type layer, multiple quantum well layer (also known as active layer), electronic barrier layer and
P-type layer.When a current passes through, the electronics of N-type layer and the hole of P-type layer enter multiple quantum well layer well region and compound, sending
Visible light.Wherein, substrate is graphical sapphire substrate (Al2O3).Graphical sapphire substrate growth GaN epitaxial layer (including it is heavy
Product other layers on the buffer layer) it can increase epitaxial layer bottom (including GaN nucleating layer and fill and lead up layer) reflection, and figure
Bottom width is bigger, is more conducive to device and goes out light.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems: graphical blue precious
GaN epitaxial layer is grown on stone lining bottom is principally obtaining the GaN epitaxial layer generated based on sapphire c to face.For graphical blue precious
Stone lining bottom, the substrate surface between figure are Sapphire Substrate c to face.When the figure period is constant and the bottom width of figure becomes larger,
Sapphire c between figure becomes smaller to the area in face, and which increase the difficulty in c to face growing epitaxial layers.
Summary of the invention
The embodiment of the invention provides a kind of GaN base light emitting epitaxial wafers and preparation method thereof, can be in sapphire c
GaN base epitaxial layer is grown in the lesser situation of area ratio in face.The technical solution is as follows:
On the one hand, a kind of preparation method of GaN base light emitting epitaxial wafer is provided, which comprises
There is provided substrate, the substrate be graphical sapphire substrate, the bottom width of the graphical sapphire substrate be equal to or
Greater than 2.9 microns；
Buffer layer over the substrate；
GaN nucleating layer is deposited on the buffer layer, the GaN nucleating layer includes high-temperature low-pressure GaN layer and cryogenic high pressure
GaN layer, the high-temperature low-pressure GaN layer is between the buffer layer and the cryogenic high pressure GaN layer；
Sequentially on the GaN nucleating layer deposit GaN high temperature fill and lead up layer, layer of undoped gan, N-type layer, multiple quantum well layer and
P-type layer.
It is optionally, described that GaN nucleating layer is deposited on the buffer layer, comprising:
Driving is deposited with the substrate rotation of the buffer layer, and deposits the high-temperature low-pressure on the buffer layer of rotation
GaN layer and the cryogenic high pressure GaN layer, the growth temperature of the high-temperature low-pressure GaN layer is 1030~1060 DEG C, growth pressure is
100~300torr, the growth temperature of the cryogenic high pressure GaN layer is 1000~1030 DEG C, growth pressure be 400~
600torr, the thickness of the high-temperature low-pressure GaN layer are less than the thickness of the cryogenic high pressure GaN layer, the thickness of the GaN nucleating layer
Degree is 1~2 micron.
Optionally, when depositing the high-temperature low-pressure GaN layer, the revolving speed of the substrate is 1000~1200 revs/min,
When depositing the cryogenic high pressure GaN layer, the revolving speed of the substrate is 400~600 revs/min.
Optionally, the buffer layer includes AlN layers and BGaN layers, and described AlN layers is located at the substrate and BGaN layers described
Between, the buffer layer over the substrate, comprising:
Deposit over the substrate it is AlN layers described, described AlN layers with a thickness of 5~20nm, described AlN layers of growth pressure
Power is 100~200torr, and AlN layers of the growth temperature is 500~600 DEG C；
Deposited on AlN layers described it is BGaN layers described, described BGaN layers with a thickness of 10~30nm, BGaN layers of the life
Long pressure is 100~200torr, and BGaN layers of the growth temperature is 500~600 DEG C.
Optionally, it is described deposited on AlN layers described it is BGaN layers described, comprising:
The growth room for AlN layers of the substrate will be deposited with being placed into metallo-organic compound chemical gaseous phase deposition equipment
It is interior；
The first reaction gas is continually fed into the growth room and is passed through the second reaction gas to the growth interventricular septum
Body, BGaN layers described to deposit on AlN layers described, first reaction gas includes TEB and NH3, second reaction gas
Body includes TMGa or TEGa.
Optionally, the GaN high temperature fill and lead up layer with a thickness of 1~2 micron, the GaN high temperature fills and leads up the growth pressure of layer
For 100~300torr, the growth temperature that the GaN high temperature fills and leads up layer is 1100~1150 DEG C.
On the other hand, a kind of GaN base light emitting epitaxial wafer is provided, the epitaxial wafer includes: graphic sapphire
Substrate, the buffer layer sequentially deposited on the graphical sapphire substrate, GaN nucleating layer, GaN high temperature fill and lead up layer, undoped
The bottom width of GaN layer, N-type layer, multiple quantum well layer and P-type layer, the graphical sapphire substrate is equal to or more than 2.9 microns, institute
Stating GaN nucleating layer includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, the high-temperature low-pressure GaN layer be located at the buffer layer with
Between the cryogenic high pressure GaN layer.
Optionally, the thickness of the high-temperature low-pressure GaN layer is less than the thickness of the cryogenic high pressure GaN layer, the GaN nucleation
Layer with a thickness of 1~2 micron.
Optionally, the buffer layer includes AlN layers and BGaN layers, and described AlN layers is located at the substrate and BGaN layers described
Between.
Optionally, described AlN layers with a thickness of 5~20nm, described BGaN layers with a thickness of 10~30nm.
Technical solution provided in an embodiment of the present invention has the benefit that by GaN nucleating layer include high-temperature low-pressure
GaN layer and cryogenic high pressure GaN layer, high-temperature low-pressure GaN layer is between buffer layer and cryogenic high pressure GaN layer, the life of GaN nucleating layer
Length mainly forms nucleus on the buffer layer, and constantly grows up to form island, in the initial growth stages of GaN nucleating layer, passes through
The growth pattern of high-temperature low-pressure, be beneficial to sapphire c on the figure on graphical sapphire substrate and between figure to
Form the initial island GaN on face, and the three-dimensional on the initial island GaN formed mostly with sapphire c on face the three of the island GaN
It is identical to tie up direction；And in the back segment growth phase of GaN nucleating layer, by the growth pattern of cryogenic high pressure, be conducive to sapphire c to
The three dimensional growth on the island GaN formed on face, in this way, by the way of two-step growth GaN nucleating layer, it can be in the figure of big bottom width
The area in change Sapphire Substrate and sapphire c to face is preferably nucleated when smaller, in the base for guaranteeing that crystal quality is not deteriorated
On plinth, increase the external quantum efficiency of device.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the preparation method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of the preparation method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention；
Fig. 3 is a kind of structural schematic diagram of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Fig. 1 shows a kind of preparation method of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.Referring to figure
1, this method process includes the following steps.
Step 101 provides substrate.
Wherein, substrate is graphical sapphire substrate, and the bottom width of graphical sapphire substrate is equal to or more than 2.9 microns.
Step 102, on substrate buffer layer.
Illustratively, buffer layer includes AlN layers；Alternatively, buffer layer includes AlN layers and BGaN layers, AlN layers be located at substrate with
Between BGaN layers.
When buffer layer includes AlN layers and BGaN layers, since the radius of B atom is respectively than the radius of Al atom and Ga atom
Small, B and Ga is integrated in BGaN material, and the lattice constant of BGaN material is close to Sapphire Substrate, AlN material and GaN material
The lattice constant of material, then, transition is carried out from Sapphire Substrate, AlN material to GaN material by BGaN material, is capable of providing
Reversed compression, between Sapphire Substrate, AlN material and GaN material lattice mismatch and big bottom width substrate institute
Bring tensile stress is offset, to reduce or eliminate the inclined bulgy phenomenon of multiple quantum well layer, improves the photoelectric conversion of device
Efficiency；Simultaneously on the basis of guaranteeing that crystal quality is not deteriorated, biggish bottom width can increase the external quantum efficiency of device.
Step 103 deposits GaN nucleating layer on the buffer layer.
Wherein, GaN nucleating layer includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, and high-temperature low-pressure GaN layer is located at buffering
Between layer and cryogenic high pressure GaN layer.
Step 104, sequentially deposition GaN high temperature fills and leads up layer, layer of undoped gan, N-type layer, multiple quantum wells on GaN nucleating layer
Layer and P-type layer.
The embodiment of the present invention includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, high-temperature low-pressure GaN by GaN nucleating layer
Layer is between buffer layer and cryogenic high pressure GaN layer, and the growth of GaN nucleating layer mainly forms nucleus on the buffer layer, not
It is disconnected to grow up to form island, it is beneficial to by the growth pattern of high-temperature low-pressure in figure in the initial growth stages of GaN nucleating layer
Change the sapphire c on the figure in Sapphire Substrate and between figure and forms the initial island GaN, and initial GaN on face
The three-dimensional on island is mostly identical as the three-dimensional on the island GaN that sapphire c is formed on face；And in the back segment of GaN nucleating layer
Growth phase is conducive to the three dimensional growth on the island GaN that sapphire c is formed on face by the growth pattern of cryogenic high pressure, this
Sample, by the way of two-step growth GaN nucleating layer, can big bottom width graphical sapphire substrate and sapphire c to face
It is preferably nucleated when area is smaller, on the basis of guaranteeing that crystal quality is not deteriorated, increases the external quantum efficiency of device.
Fig. 2 shows a kind of preparation methods of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention.Referring to figure
2, this method process includes the following steps.
Step 201 provides substrate.
Illustratively, substrate can be graphical sapphire substrate (Patterned Sapphire Substrate, abbreviation
PSS).GaN base light emitting epitaxial wafer is grown using PSS, the outgoing brightness of light emitting diode can be enhanced, while reversed
Leakage current reduces, and the service life of light emitting diode is also extended.
Illustratively, the bottom width of PSS is equal to or more than 2.9 microns.Bottom width is the diameter of figure on PSS.Bottom width be equal to or
PSS greater than 2.9 microns is also referred to as big structure cell bottom width substrate.
Illustratively, the bottom width of PSS is 2.9 microns, and the figure period of PSS can be 3.0 microns or 3.05 microns, this
When, the face the c length between adjacent pattern is 0.1 or 0.15 micron.The face c is the face that GaN base epitaxial layer is grown on PSS.
Illustratively, the pattern height of PSS is 1.7~2.0 microns.
Step 202, depositing Al N layers on substrate.
Illustratively, using physical vapour deposition (PVD) (Physical Vapor Deposition, abbreviation PVD) method, such as
Magnetron sputtering method, depositing Al N layers on substrate.AlN layers with a thickness of 5~20nm, AlN layers of growth pressure is 100~
200torr, AlN layers of growth temperature is 500~600 DEG C.
It illustratively, can be in metallo-organic compound chemical gaseous phase deposition (Metal-organic Chemical
Vapor Deposition, abbreviation MOCVD) method deposit BGaN layer, GaN nucleating layer, GaN high temperature fill and lead up layer, undoped GaN
Layer, N-type layer, multiple quantum well layer and P-type layer.The preparation method can be realized using MOCVD device.In the preparation method, with
High-purity H2(hydrogen) and N2(nitrogen) is used as carrier gas, using TMGa (trimethyl is sowed) or TEGa (triethyl group is sowed) as the source Ga,
Using TMAl (trimethyl aluminium) as the source Al, using TEB (boron triethyl) as the source B, using TMIn (trimethyl indium) as the source In, with
NH3(ammonia) is used as the source N, uses SiH4(silane) is used as N type dopant, uses CP2Mg (two luxuriant magnesium) is used as P-type dopant.
Step 203, in H2The pre-heat treatment is carried out to the substrate for being deposited with AlN layers in atmosphere.
Specifically, the substrate for being deposited with AlN layers is put into MOCVD device, makes substrate in H2In atmosphere heat treatment 10~
15 minutes, heat treatment temperature can be 1000~1040 DEG C.
Step 204, driving be deposited with AlN layer substrate rotation, sequentially on substrate deposition BGaN layers, GaN nucleating layer,
GaN high temperature fills and leads up layer, layer of undoped gan, N-type layer, multiple quantum well layer and P-type layer.
Specifically, on the pallet for the growth room that the substrate for being deposited with AlN layers is placed on MOCVD device.It is set by MOCVD
During standby growth GaN base epitaxial layer, driving pallet rotation, to grow GaN base epitaxial layer on the substrate of rotation.Step
204 include the following steps 2041- step 2049.
Step 2041 deposits BGaN layers on the AlN layer of rotation.
Illustratively, step 2041 may include: to growth room to be continually fed into the first reaction gas and between growth room
Every being passed through the second reaction gas, to deposit BGaN layers on AlN layer.Wherein, the first reaction gas includes TEB and NH3, second is anti-
Answering gas includes TMGa or TEGa.
Illustratively, it includes: the generation pulse signal that is first powered that interval, which is passed through the implementation of the second reaction gas, then in arteries and veins
The conduction time for rushing the period is passed through the second reaction gas to growth room.Wherein, the duty ratio of pulse signal can be 10%-
60%.
Illustratively, BGaN layers with a thickness of 10~30nm, BGaN layers of growth pressure is 100~200torr, BGaN layers
Growth temperature be 500~600 DEG C.
BGaN layers of growth temperature is lower.When growth temperature is lower, nuclear island is advantageously formed into.But B is former when low temperature
The surface mobility of son is also relatively low, if being constantly passed through the source Ga and the source B to growth room, the low surface mobility of B be will lead to
It is overstocked at nuclear island, cause the interface of filling and leading up on substrate between figure and figure to generate more defect.In order to solve this problem, it adopts
It is passed through the mode of TMGa or TEGa with interval, increases B atomic quantity, improves the surface mobility of B, this way it is possible to avoid by
It is overstocked at nuclear island caused by the low surface mobility of B, so that causing to fill and lead up interface generates more defect, improve GaN epitaxy
The crystal quality of layer.In addition, in such a way that interval is passed through TMGa or TEGa, it is possible to reduce between the source Ga being passed through and the source Al
Pre-reaction is generated, pre-reaction is avoided to influence the crystal quality of GaN epitaxial layer.
Step 2042, the depositing high temperature low pressure GaN layer on the BGaN layer of rotation.
Illustratively, the growth temperature of high-temperature low-pressure GaN layer be 1030~1060 DEG C, growth pressure be 100~
300torr。
Illustratively, in depositing high temperature low pressure GaN layer, the revolving speed of substrate is 1000~1200 revs/min.
Step 2043, the deposit low temperature high voltage gan layer in the high-temperature low-pressure GaN layer of rotation.
Illustratively, the growth temperature of cryogenic high pressure GaN layer be 1000~1030 DEG C, growth pressure be 400~
600torr。
Illustratively, in deposit low temperature high voltage gan layer, the revolving speed of substrate is 400~600 revs/min.
Illustratively, the flow of growth high-temperature low-pressure GaN layer is passed through TMGa or TEGa are less than growing low temperature high pressure
The flow of TMGa or TEGa that GaN layer is passed through.In this way, cryogenic high pressure GaN layer is under the growth conditions of high pressure and high flow capacity, it is low
The growth rate of warm high voltage gan layer is much larger than the growth rate of high-temperature low-pressure GaN layer, this is conducive to the formation on the island GaN.
Illustratively, the thickness of high-temperature low-pressure GaN layer be less than cryogenic high pressure GaN layer thickness, GaN nucleating layer with a thickness of
1~2.0 micron.
Compared to BGaN layers, the growth temperature of GaN nucleating layer is higher.Higher temperature will melt a part of low temperature BGaN
Layer, since BGaN layers of growth temperatures are lower, crystal quality is bad, melts BGaN layers a part of, and gives birth under the high temperature conditions
Long GaN nucleating layer, can be improved crystal quality.
In addition, the revolving speed of substrate is bigger when passing through depositing high temperature low pressure GaN layer, and in deposit low temperature high voltage gan layer
When, the revolving speed of substrate is smaller, this is conducive to preferably be nucleated.
Step 2044, deposition GaN high temperature fills and leads up layer in the cryogenic high pressure GaN layer of rotation.
Illustratively, GaN high temperature fill and lead up layer with a thickness of 1~2 micron, GaN high temperature fill and lead up the growth pressure of layer be 100~
The growth temperature that 300torr, GaN high temperature fill and lead up layer is 1100~1150 DEG C.
Illustratively, GaN nucleating layer and GaN high temperature fill and lead up the sum of thickness of layer no more than 2 microns.In this way, enough by PSS
Figure between gap cover with.
Compared to GaN nucleating layer, GaN high temperature fill and lead up the temperature of layer more it is high once, this is conducive to fill and lead up between figure and figure
Gap, increase the area in the face c, and obtain better crystal quality.
Step 2045 is filled and led up in GaN high temperature and deposits layer of undoped gan on layer.
Illustratively, the growth temperature of layer of undoped gan can be 1000 DEG C~1100 DEG C, and growth pressure can be
100Torr is between 500Torr.The growth thickness of layer of undoped gan can be 1.0 to 5.0 microns.
Step 2046, the deposited n-type layer in layer of undoped gan.
Illustratively, N-type layer is n-type doping GaN layer, and the thickness of n-type doping GaN layer is between 1~5 micron, n-type doping
The growth temperature of GaN layer can be 1000 DEG C~1200 DEG C, and growth pressure is in 100Torr between 500Torr.N-type doping GaN
Layer is that Si is adulterated, and Si doping concentration is 1018cm-3~1019cm-3Between.
Step 2047 deposits multiple quantum well layer in N-type layer.
Illustratively, multiple quantum well layer can be made of the Quantum Well barrier layer in 3 to 15 periods.Quantum Well barrier layer includes
InxGa1-xN (0 < x < 1) Quantum Well and GaN quantum are built, and the thickness of Quantum Well is in 3nm or so, and the range of growth temperature is at 720 DEG C
Between~829 DEG C, growth pressure range is between 100Torr and 500Torr.For the thickness that quantum is built in 9nm between 20nm, growth is warm
Degree is between 850 DEG C~959 DEG C, and growth pressure is between 100Torr to 500Torr.
Step 2048 deposits P-type layer on multiple quantum well layer.
Illustratively, P-type layer is p-type doped gan layer.The growth temperature of p-type doped gan layer 850 DEG C~1080 DEG C it
Between, growth pressure section is 200Torr~300Torr.The thickness of p-type doped gan layer is in 100nm between 800nm.
Step 2049 deposits p-type composite contact layer in P-type layer.
Illustratively, the growth temperature section of p-type composite contact layer is 850 DEG C~1050 DEG C, and growth pressure section is
100Torr~300Torr.P-type composite contact layer with a thickness of 5nm between 300nm.
After depositing p-type composite contact layer, the growth room temperature of MOCVD can be reduced, in nitrogen atmosphere externally
Prolong piece to be made annealing treatment, annealing temperature can be 650 DEG C~850 DEG C, and annealing time can be 5 to 15 minutes, then be down to
Room temperature terminates the growth of epitaxial wafer.
The embodiment of the present invention includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, high-temperature low-pressure GaN by GaN nucleating layer
Layer is between buffer layer and cryogenic high pressure GaN layer, and the growth of GaN nucleating layer mainly forms nucleus on the buffer layer, not
It is disconnected to grow up to form island, it is beneficial to by the growth pattern of high-temperature low-pressure in figure in the initial growth stages of GaN nucleating layer
Change the sapphire c on the figure in Sapphire Substrate and between figure and forms the initial island GaN, and initial GaN on face
The three-dimensional on island is mostly identical as the three-dimensional on the island GaN that sapphire c is formed on face；And in the back segment of GaN nucleating layer
Growth phase is conducive to the three dimensional growth on the island GaN that sapphire c is formed on face by the growth pattern of cryogenic high pressure, this
Sample, by the way of two-step growth GaN nucleating layer, can big bottom width graphical sapphire substrate and sapphire c to face
It is preferably nucleated when area is smaller, on the basis of guaranteeing that crystal quality is not deteriorated, increases the external quantum efficiency of device.
Fig. 3 shows a kind of GaN base light emitting epitaxial wafer provided in an embodiment of the present invention, referring to Fig. 3, the epitaxial wafer
It include: that substrate 31, the buffer layer sequentially deposited on substrate 31 32, GaN nucleating layer 33, GaN high temperature fill and lead up layer 34, undoped
GaN layer 35, N-type layer 36, multiple quantum well layer 37 and P-type layer 38.Substrate 31 is PSS, and it is micro- that the bottom width of PSS is equal to or more than 2.9
Rice.GaN nucleating layer 33 includes high-temperature low-pressure GaN layer 331 and cryogenic high pressure GaN layer 332, and high-temperature low-pressure GaN layer 331 is located at buffering
Between layer 32 and cryogenic high pressure GaN layer 332.
Illustratively, the thickness of high-temperature low-pressure GaN layer 331 is less than the thickness of cryogenic high pressure GaN layer 332, GaN nucleating layer 33
With a thickness of 1~2 micron.
Illustratively, buffer layer 32 includes AlN layer 321 and BGaN layer 322, and AlN layer 321 is located at substrate 31 and BGaN layers
Between 322.
Illustratively, AlN layers be low temperature AI N layers, AlN layers with a thickness of 5~20nm；BGaN layers are low temperature BGaN layers,
BGaN layers with a thickness of 10~30nm.
Illustratively, GaN high temperature fill and lead up layer with a thickness of 1~2 micron.
Illustratively, the pattern height of PSS is 1.7~2.0 microns, GaN nucleating layer and GaN high temperature fill and lead up layer thickness it
Be no more than 2 microns.In this way, the gap between the figure of PSS is covered with enough.
The embodiment of the present invention includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, high-temperature low-pressure GaN by GaN nucleating layer
Layer is between buffer layer and cryogenic high pressure GaN layer, and the growth of GaN nucleating layer mainly forms nucleus on the buffer layer, not
It is disconnected to grow up to form island, it is beneficial to by the growth pattern of high-temperature low-pressure in figure in the initial growth stages of GaN nucleating layer
Change the sapphire c on the figure in Sapphire Substrate and between figure and forms the initial island GaN, and initial GaN on face
The three-dimensional on island is mostly identical as the three-dimensional on the island GaN that sapphire c is formed on face；And in the back segment of GaN nucleating layer
Growth phase is conducive to the three dimensional growth on the island GaN that sapphire c is formed on face by the growth pattern of cryogenic high pressure, this
Sample, by the way of two-step growth GaN nucleating layer, can big bottom width graphical sapphire substrate and sapphire c to face
It is preferably nucleated when area is smaller, on the basis of guaranteeing that crystal quality is not deteriorated, increases the external quantum efficiency of device.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of GaN base light emitting epitaxial wafer, which is characterized in that the described method includes:
Substrate is provided, the substrate is graphical sapphire substrate, and the bottom width of the graphical sapphire substrate is equal to or more than
2.9 micron；
Buffer layer over the substrate；
GaN nucleating layer is deposited on the buffer layer, the GaN nucleating layer includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN
Layer, the high-temperature low-pressure GaN layer is between the buffer layer and the cryogenic high pressure GaN layer；
GaN high temperature is sequentially deposited on the GaN nucleating layer fills and leads up layer, layer of undoped gan, N-type layer, multiple quantum well layer and p-type
Layer.
2. the method according to claim 1, wherein described deposit GaN nucleating layer, packet on the buffer layer
It includes:
Driving is deposited with the substrate rotation of the buffer layer, and the high-temperature low-pressure GaN is deposited on the buffer layer of rotation
Layer and the cryogenic high pressure GaN layer, the growth temperature of the high-temperature low-pressure GaN layer is 1030~1060 DEG C, growth pressure 100
~300torr, the growth temperature of the cryogenic high pressure GaN layer is 1000~1030 DEG C, growth pressure is 400~600torr, institute
State high-temperature low-pressure GaN layer thickness be less than the cryogenic high pressure GaN layer thickness, the GaN nucleating layer it is micro- with a thickness of 1~2
Rice.
3. according to the method described in claim 2, it is characterized in that,
When depositing the high-temperature low-pressure GaN layer, the revolving speed of the substrate is 1000~1200 revs/min,
When depositing the cryogenic high pressure GaN layer, the revolving speed of the substrate is 400~600 revs/min.
4. the method according to claim 1, wherein the buffer layer includes AlN layers and BGaN layers, the AlN
Layer be located at the substrate and it is BGaN layers described between, the buffer layer over the substrate, comprising:
Deposit over the substrate it is AlN layers described, described AlN layers with a thickness of 5~20nm, AlN layers of the growth pressure is
100~200torr, AlN layers of the growth temperature are 500~600 DEG C；
Deposited on AlN layers described it is BGaN layers described, described BGaN layers with a thickness of 10~30nm, described BGaN layers of growth pressure
Power is 100~200torr, and BGaN layers of the growth temperature is 500~600 DEG C.
5. according to the method described in claim 4, it is characterized in that, described deposit BGaN layers described, packet on AlN layers described
It includes:
AlN layers of the substrate will be deposited with to be placed into the growth room of metallo-organic compound chemical gaseous phase deposition equipment；
The first reaction gas is continually fed into the growth room and is passed through the second reaction gas to the growth interventricular septum, with
Deposited on AlN layers described BGaN layers described, first reaction gas includes TEB and NH3, second reaction gas includes
TMGa or TEGa.
6. the method according to claim 1, wherein the GaN high temperature fill and lead up layer with a thickness of 1~2 micron, institute
State GaN high temperature fill and lead up layer growth pressure be 100~300torr, the GaN high temperature fill and lead up layer growth temperature be 1100~
1150℃。
7. a kind of GaN base light emitting epitaxial wafer, which is characterized in that the epitaxial wafer includes: graphical sapphire substrate, suitable
The secondary buffer layer deposited on the graphical sapphire substrate, GaN nucleating layer, GaN high temperature fill and lead up layer, layer of undoped gan, N
Type layer, multiple quantum well layer and P-type layer, the bottom width of the graphical sapphire substrate are equal to or more than 2.9 microns, the GaN at
Stratum nucleare includes high-temperature low-pressure GaN layer and cryogenic high pressure GaN layer, the high-temperature low-pressure GaN layer be located at the buffer layer with it is described low
Between warm high voltage gan layer.
8. epitaxial wafer according to claim 7, which is characterized in that the thickness of the high-temperature low-pressure GaN layer is less than described low
The thickness of warm high voltage gan layer, the GaN nucleating layer with a thickness of 1~2 micron.
9. epitaxial wafer according to claim 7, which is characterized in that the buffer layer includes AlN layers and BGaN layers, described
AlN layers be located at the substrate and it is BGaN layers described between.
10. epitaxial wafer according to claim 9, which is characterized in that described AlN layers with a thickness of 5~20nm, the BGaN
Layer with a thickness of 10~30nm.
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