CN108630787A - A kind of GaN base LED extension bottom growing methods improving crystal quality - Google Patents

A kind of GaN base LED extension bottom growing methods improving crystal quality Download PDF

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CN108630787A
CN108630787A CN201710180102.XA CN201710180102A CN108630787A CN 108630787 A CN108630787 A CN 108630787A CN 201710180102 A CN201710180102 A CN 201710180102A CN 108630787 A CN108630787 A CN 108630787A
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gan
layer
growth
base led
crystal quality
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李毓锋
马旺
王成新
徐现刚
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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Shandong Inspur Huaguang Optoelectronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer

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Abstract

A kind of GaN base LED extension bottom growing methods improving crystal quality, in Grown on Sapphire Substrates low temperature GaN buffer in the reative cell of MOCVD growth furnaces, to low-temperature gan layer high-temperature baking, regrowth GaN nucleating layers；Then undoped GaN layer, n-type GaN layer, multiple quantum well layer, p-type AlGaN layer, p-type GaN layer and p-type GaN contact electrode layers are grown successively.Above-mentioned growing method will have an impact the lattice mismatch between substrate and extension, change the stress distribution of epitaxial wafer to change the warpage degree in growth course, and it improves the crystalline quality for growing GaN film under hot conditions and improves uniformity, so that the architecture quality higher of entire LED epitaxial layers, the reduction of fault of construction makes carrier radiativity recombination probability increase and improve brightness, low production cost improves growth quality, the final luminous efficiency for improving GaN base LED component.

Description

A kind of GaN base LED extension bottom growing methods improving crystal quality
Technical field
The present invention relates to a kind of GaN base LED bottom growing methods to belong to LED growth technologies to improve crystal quality Field.
Background technology
Light emitting diode (LED, Light Emitting Diode) is a kind of semiconducting solid luminescent device, utilizes half Conductor PN junction can directly convert the electricity into light as luminescent material.After the both ends of semiconductor body Pn knots add forward voltage, The minority carrier injected in PN junction occurs multiple complete, releases superfluous energy and photon is caused to emit, directly send out color be it is red, Orange, yellow, green, green, blue, purple light.Wherein, with gallium nitride (GaN) be representative Group III-V compound semiconductor due to having band The features such as gap is wide, luminous efficiency is high, electronics saturation drift velocity is high, chemical property is stablized, high brightness blue light-emitting diode, The optoelectronic areas such as blue laser have huge application potential, cause the extensive concern of people.
Currently, organic chemistry vapor deposition of metal method is mainly applied in the epitaxial growth of the semi-conducting material based on GaN (MOCVD) it realizes.This method comprises the following steps：With high-purity H2Or N2Or hydrogen-nitrogen mixture gas is in pressure as carrier gas 760~780Torr, in 1000~1100 DEG C of high-temperature process Sapphire Substrates 5~20 minutes；480~550 DEG C are cooled the temperature to, Growth thickness is the low temperature buffer gallium nitride layer of 10~50nm on a sapphire substrate；Increase temperature to 1000~1100 DEG C, The gallium nitride that undopes (uGaN) of 1~2.5 μm of continued propagation on low temperature buffer gallium nitride layer；Temperature is kept, in the nitridation that undopes The N-shaped of 2~4 μm of continued propagation mixes the gallium nitride layer of Si on gallium layer；Temperature is increased to 700 DEG C~800 DEG C, mixes the nitrogen of Si in N-shaped Change and grow indium-doped gallium nitride well layer on gallium layer, increases temperature and grown in indium-doped gallium nitride well layer to 800 DEG C~1000 DEG C Undope gallium nitride barrier layer, and well layer forms one group of Quantum Well with barrier layer and builds, and the one or more groups of Quantum Well of repeated growth are built, and are formed with Active layer；After the growth for completing active layer, temperature is increased to the p-type aluminum gallium nitride of 950~1050 DEG C of 20~80nm of continued propagation Layer；Reduction temperature is to 900~1000 DEG C, the p-type gallium nitride for mixing magnesium of 0.1~0.5 μm of continued propagation on p-type gallium nitride layer Layer；Temperature is reduced to 600~700 DEG C, the low temperature that 5~10nm is grown on the p-type gallium nitride layer for mix magnesium mixes magnesium indium gallium nitrogen layer；Drop 600~750 DEG C of low temperature, in a nitrogen atmosphere, 10~30 minutes duration activated p-type gallium nitride layer.
GaN epitaxy is grown using MOCVD device, generally requires and reacts Sapphire Substrate merging reative cell.Due to There are mismatches for lattice between sapphire and GaN, and will produce dislocation in growth influences crystalline quality.In order to minimize these The influence of dislocation generally requires when growing high-purity GaN single crystal and first grows one layer of GaN buffer layer, regrowth on sapphire GaN single crystal.The ingredient and growth conditions of buffer layer have vital effect to the crystalline quality of GaN crystal.
MOCVD boards grow extension, when especially with graph substrate, due to the lattice mismatch between substrate and extension with And thermal deformation difference generate stress can make epitaxial wafer occur warping phenomenon so that when grow epitaxial structure extension center and Marginal portion is uneven, eventually leads to even, and the luminous intensity of epitaxial wafer is caused significantly to decline.The buffer layer of extension is to be in indigo plant Articulamentum between jewel substrate and GaN epitaxy, growth conditions will have an impact the lattice mismatch between substrate and extension, Change the stress distribution of epitaxial wafer to change the warpage degree in growth course, and improves and grow GaN under hot conditions The crystalline quality of film and improve uniformity so that the architecture quality higher of entire LED epitaxial layers, the reduction of fault of construction make It obtains carrier radiativity recombination probability to increase and improve brightness, low production cost improves growth quality, finally improves GaN base The luminous efficiency of LED component.
Also there are many improved methods for the preparation of GaN base light emitting chip, such as Chinese patent literature CN103137810A It is disclosed《A kind of GaN base light emitting chip and preparation method thereof prepared using scribing twice》, CN103515495A it is public It opens《A kind of growing method of GaN base light emitting chip》, disclosed in CN104022200A《A kind of GaN base light-emitting diodes Tube chip and preparation method thereof》And disclosed in CN102324450A《GaN base light emitting chip and preparation method thereof》.But It is stress distribution of these methods without change epitaxial wafer, the crystalline quality of GaN film is to be improved.
Invention content
The present invention for existing GaN base LED growth technologies there are the problem of, providing a kind of improving crystal quality GaN base LED extension bottom growing methods, the cost of this method is low, effectively improves the crystal quality and performance of epitaxial structure, finally Improve the luminous efficiency of GaN base LED component.
The GaN base LED extension bottom growing methods of the improvement crystal quality of the present invention, detailed process are：
It is served as a contrast in sapphire at 500 DEG C -600 DEG C in the reative cell of organic chemistry vapor deposition of metal (MOCVD) growth furnace The low temperature GaN buffer of 20nm-60nm thickness is grown on bottom；Then the low-temperature gan layer of growth is carried out with 1000-1100 DEG C of high temperature Baking, regrowth GaN nucleating layers；It is warming up to 1150 DEG C of undoped GaN layers of growth；In 1150 DEG C of growing n-type GaN layers；Growth 12 The multiple quantum well layer in a period, wherein：The thickness of GaN barrier layer is 13nm, and growth temperature is 850 DEG C；The thickness of InGaN well layer is 2nm, growth temperature are 760 DEG C；It is warming up to 1000 DEG C of growth p-type AlGaN layers；P-type GaN layer is grown at 980 DEG C, is cooled to 950 DEG C growth highly-doped p-type GaN contact electrode layers, be cooled to room temperature, growth terminates.
The baking is in H2It carries out, toasts 1 minute under environment.
The GaN nucleating layers are grown at 550 DEG C, growth thickness 20-60nm.
The undoped GaN layer thickness is 2.5 μm.
The n-type GaN layer thickness is 2-3 μm.
The n-type GaN layer adulterates silane, doping concentration 1E18~5E19.
The thickness of the p-type AlGaN layer is 20-60nm.
The thickness of the p-type GaN layer is 120-200nm.
The thickness of the p-type GaN contact electrode layers is 20-40nm.
The highly-doped p-type GaN contact electrode layer doped sources are the sources Mg, doping concentration 6E19~5E20.
The present invention is toasted the GaN buffer layers of low-temperature epitaxy using high temperature, then carries out GaN nucleating layers again, in this way Growing method the lattice mismatch between substrate and extension will be had an impact, change the stress distribution of epitaxial wafer to change Warpage degree in growth course, and improve the crystalline quality for growing GaN film under hot conditions and improve uniformity, So that the architecture quality higher of entire LED epitaxial layers, the reduction of fault of construction make carrier radiativity recombination probability increase and Brightness is improved, low production cost improves growth quality, the final luminous efficiency for improving GaN base LED component.
Description of the drawings
Fig. 1 is the growing method flow diagram of the present invention.
In Fig. 1：1, Sapphire Substrate；2, GaN buffer layers；2-a, baking GaN layer；2-b, GaN nucleating layer；3, undoped GaN layer；4, N-type GaN；5, multiple quantum wells (InGaN/GaN)；6, p-type AlGaN layer；7, p-type GaN layer.
Specific implementation mode
The GaN base LED extension bottom growing methods of the improvement crystal quality of the present invention, include the following steps：
1. in the reative cell of MOCVD growth furnaces, the low temperature GaN buffer of 20nm-60nm thickness is grown at 500 DEG C -600 DEG C 2。
2. reaction chamber temperature is risen to 1000-1100 DEG C, in H2The low temperature GaN buffer of growth 2 is dried under environment It is roasting, it toasts 1 minute；Obtain baking GaN layer 2-a.
3. reative cell is down to 550 DEG C carries out nucleating growth again, GaN nucleating layer 2-b are obtained, grow 30nm nucleating layers.
4. the reaction indoor temperature of MOCVD growth furnaces is increased to 1150 DEG C, 2.5 μm are grown on GaN nucleating layers 2-b The undoped GaN layer of high temperature 3；
5. growing the n-type GaN layer 4 of 2-3 μ m-thicks at 1150 DEG C；Doped n-type GaN4 can be adulterated dense using doped source as silane Spend 1E18~5E19；
6. the multiple quantum well layer in 12 periods is grown, wherein：The thickness of GaN barrier layer is 13nm, and growth temperature is 850 DEG C； The thickness of InGaN well layer is 2nm, and growth temperature is 760 DEG C；
7. 1000 DEG C are warming up to, the growing P-type AlGaN layer 6 in multiple quantum wells 5, growth thickness 20-60nm；
8. growth P-type GaN layer 7
The p-type GaN layer 7 of 950 DEG C of growth 120-200nm thickness of cooling, the highly-doped p-type of 20-40nm thickness is grown at 980 DEG C GaN contact electrode layers, highly-doped p-type GaN contact electrode layer doped sources are the sources Mg, doping concentration 6E19~5E20.It is cooled to room Temperature, growth terminate.

Claims (10)

1. a kind of GaN base LED extension bottom growing methods improving crystal quality, it is characterized in that：
It is grown on a sapphire substrate at 500 DEG C -600 DEG C in the reative cell of organic chemistry vapor deposition of metal growth furnace The low temperature GaN buffer of 20nm-60nm thickness；Then the low-temperature gan layer of growth is toasted with 1000-1100 DEG C of high temperature, then Grow GaN nucleating layers；It is warming up to 1150 DEG C of undoped GaN layers of growth；In 1150 DEG C of growing n-type GaN layers；12 periods of growth Multiple quantum well layer, wherein：The thickness of GaN barrier layer is 13nm, and growth temperature is 850 DEG C；The thickness of InGaN well layer is 2nm, growth Temperature is 760 DEG C；It is warming up to 1000 DEG C of growth p-type AlGaN layers；P-type GaN layer is grown at 980 DEG C, and it is high to be cooled to 950 DEG C of growths Doped p type GaN contact electrode layers, are cooled to room temperature, and growth terminates.
2. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described Baking is in H2It carries out, toasts 1 minute under environment.
3. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described GaN nucleating layers are grown at 550 DEG C, growth thickness 20-60nm.
4. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described Undoped GaN layer thickness is 2.5 μm.
5. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described N-type GaN layer thickness is 2-3 μm.
6. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described N-type GaN layer adulterates silane, doping concentration 1E18~5E19.
7. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described The thickness of p-type AlGaN layer is 20-60nm.
8. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described The thickness of p-type GaN layer is 120-200nm.
9. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：It is described The thickness of p-type GaN contact electrode layers is 20-40nm.
10. the GaN base LED extension bottom growing methods according to claim 1 for improving crystal quality, it is characterized in that：Institute It is the sources Mg, doping concentration 6E19~5E20 to state highly-doped p-type GaN contact electrode layer doped sources.
CN201710180102.XA 2017-03-22 2017-03-22 A kind of GaN base LED extension bottom growing methods improving crystal quality Pending CN108630787A (en)

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Publication number Priority date Publication date Assignee Title
CN109659407A (en) * 2018-10-31 2019-04-19 华灿光电(苏州）有限公司 A kind of GaN base light emitting epitaxial wafer and preparation method thereof
CN109659407B (en) * 2018-10-31 2020-04-07 华灿光电(苏州）有限公司 GaN-based light emitting diode epitaxial wafer and preparation method thereof

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