CN109326698A - A kind of manufacturing method of LED epitaxial slice - Google Patents
A kind of manufacturing method of LED epitaxial slice Download PDFInfo
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- CN109326698A CN109326698A CN201811146348.6A CN201811146348A CN109326698A CN 109326698 A CN109326698 A CN 109326698A CN 201811146348 A CN201811146348 A CN 201811146348A CN 109326698 A CN109326698 A CN 109326698A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 40
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000000137 annealing Methods 0.000 claims description 5
- 229910021478 group 5 element Inorganic materials 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 7
- 239000013078 crystal Substances 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 230000006911 nucleation Effects 0.000 abstract description 3
- 238000010899 nucleation Methods 0.000 abstract description 3
- 230000011218 segmentation Effects 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 6
- 239000011777 magnesium Substances 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of manufacturing methods of LED epitaxial slice, belong to technical field of semiconductors.Manufacturing method includes: to provide a substrate；Grown buffer layer over the substrate；3D nucleating layer is grown on the buffer layer, when growing the 3D nucleating layer, ammonia is continually fed into reaction chamber, is passed through trimethyl gallium by phased manner；Undoped GaN layer, N-type layer, multiple quantum well layer and P-type layer are successively grown on the 3D nucleating layer.Wherein 3D nucleating layer is by the way of segmentation growth, after the 3D nucleating layer of i.e. every growth a period of time, it is handled by surface of the ammonia to the 3D nucleating layer grown, the presence of the simple substance Ga of 3D nucleation layer surface can be reduced, to improve the crystal quality of 3D nucleating layer, improve antistatic effect of the LED under high current density, the final luminous efficiency for improving LED.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of manufacturing method of LED epitaxial slice.
Background technique
LED (Light Emitting Diode, light emitting diode) is a kind of semiconductor electronic component that can be luminous.As
A kind of efficient, environmentally friendly, green New Solid lighting source, is widely applied rapidly, such as traffic lights, automobile
Inside and outside lamp, landscape light in city, cell phone back light source etc..
Epitaxial wafer is the main composition part in LED, and existing GaN base LED epitaxial wafer includes substrate and is sequentially laminated on
Buffer layer, 3D (three-dimensional, three-dimensional) nucleating layer, undoped GaN layer, N-type layer, multiple quantum wells on substrate
Layer and P-type layer.Wherein 3D nucleating layer is GaN layer, when growing 3D nucleating layer, usually using ammonia as the source N, using front three
Base gallium is continually fed into 10~20min of ammonia and trimethyl gallium into reaction chamber as the source Ga, to grow 3D nucleating layer.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
The 3D nucleation layer surface grown using the above method has the excessive unreacted source Ga residual, the meeting of the remaining source Ga
It is reacted with partial region (place that adsorption can be big), causes 3D nucleating layer surface topography to change, so as to cause what is grown
The crystal quality of 3D nucleating layer is poor, influences the luminous efficiency of LED.
Summary of the invention
The embodiment of the invention provides a kind of manufacturing methods of LED epitaxial slice, and the crystalline substance of 3D nucleating layer can be improved
Weight improves the luminous efficiency of LED.The technical solution is as follows:
The embodiment of the invention provides a kind of manufacturing methods of LED epitaxial slice, which is characterized in that the manufacture
Method includes:
One substrate is provided；
Grown buffer layer over the substrate；
3D nucleating layer is grown on the buffer layer, and ammonia is continually fed into reaction chamber when growing the 3D nucleating layer,
It is passed through trimethyl gallium by phased manner；
Undoped GaN layer, N-type layer, multiple quantum well layer and P-type layer are successively grown on the 3D nucleating layer.
It is further, described to be passed through trimethyl gallium by phased manner, comprising:
A trimethyl gallium is passed through at interval of 8~15s.
Further, the time for being passed through the trimethyl gallium every time is 4~14s.
Further, the number for being passed through the trimethyl gallium is 30~90 times.
Further, the 3D nucleating layer with a thickness of 300~500nm.
Further, the growth temperature of the 3D nucleating layer is 1000~1200 DEG C.
Further, the growth pressure of the 3D nucleating layer is 100~500torr.
Further, the growth revolving speed of the 3D nucleating layer is 800~1200r/min.
Further, when growing the 3D nucleating layer, the molar flow ratios of group-v element and group iii elements is 200~
3000。
Further, before growing 3D nucleating layer on the buffer layer, the manufacturing method further include:
Reaction chamber temperature is increased to 900~1100 DEG C, the chamber pressure is controlled in 50~200torr, to institute
It states buffer layer and carries out 3~10min of annealing；
Ammonia 2s~30s is passed through into the reaction chamber.
Technical solution provided in an embodiment of the present invention has the benefit that
When growing 3D nucleating layer, ammonia is continually fed into reaction chamber, at interval of being passed through a trimethyl for a period of time
Gallium.Be equivalent to by 3D nucleating layer be segmented grow, it is every growth a period of time 3D nucleating layer after, i.e., by ammonia to the 3D grown at
The surface of stratum nucleare is handled, it is possible to reduce the residual in 3D nucleating layer surface Ga source, so that the crystal quality of 3D nucleating layer is improved,
Improve antistatic effect of the LED under high current density, the final luminous efficiency for improving LED.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of method flow diagram of LED epitaxial slice manufacturing method provided in an embodiment of the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
The embodiment of the invention provides a kind of manufacturing method of LED epitaxial slice, Fig. 1 is that the embodiment of the present invention mentions
The method flow diagram of the manufacturing method of a kind of LED epitaxial slice supplied, as shown in Figure 1, the manufacturing method includes:
Step 101 provides a substrate.
In the present embodiment, substrate is sapphire.
Step 101 further include:
Control reaction chamber temperature be 1050 DEG C, pressure be 200~500Torr, pure hydrogen atmosphere to Sapphire Substrate into
Row 5~6min of annealing, then carries out nitrogen treatment for Sapphire Substrate.
In the present embodiment, Veeco K465i or C4MOCVD (Metal Organic Chemical can be used
Vapor Deposition, metallo-organic compound chemical gaseous phase deposition) equipment realize LED growing method.Using high-purity H2
(hydrogen) or high-purity N2(nitrogen) or high-purity H2And high-purity N2Mixed gas as carrier gas, high-purity N H3As the source N, trimethyl gallium
(TMGa) and triethyl-gallium (TEGa) is used as gallium source, and trimethyl indium (TMIn) is used as indium source, and silane (SiH4) is used as n-type doping
Agent, trimethyl aluminium (TMAl) are used as silicon source, two luxuriant magnesium (CP2Mg) it is used as P-type dopant.
Step 102, on substrate grown buffer layer.
Specifically, reaction chamber temperature is controlled at 500~900 DEG C, pressure is controlled in 50~200Torr, and growth thickness is
The GaN buffer layer of 10~50nm.
Optionally, after executing the step 102, which can also include:
Reaction chamber temperature is increased to 900~1100 DEG C, chamber pressure is controlled in 50~200torr, to buffer layer
3~10min of annealing is carried out, ammonia 2s~30s is then passed through into reaction chamber, to remove the polycrystalline and amorphous in buffer layer
Impurity.
Step 103 grows 3D nucleating layer on the buffer layer.
Wherein, 3D nucleating layer is GaN layer.When growing 3D nucleating layer, ammonia is continually fed into reaction chamber, by phased manner
It is passed through trimethyl gallium.
In the present embodiment, step 103 may include:
By reaction chamber temperature control at 1000~1200 DEG C, pressure is controlled in 100~500torr, is continued into reaction chamber
It is passed through ammonia, is passed through a trimethyl gallium at interval of 8~15s, the time for being passed through trimethyl gallium every time is 4~12s, is passed through front three
The number of base gallium is 30~90 times, and growth thickness is the 3D nucleating layer of 300~500nm.
If the thickness of 3D nucleating layer is excessively thin, the antistatic effect decline of the 3D nucleating layer grown will lead to.If 3D is nucleated
The thickness of layer is blocked up, not only will affect the luminous efficiency of LED, also results in the waste of material.
If the interval time for being passed through trimethyl gallium every time is less than 8s, the simple substance of 3D nucleation layer surface can not be completely removed
Ga.If the interval time for being passed through trimethyl gallium every time is greater than 15s, ammonia can resolve into hydrogen at 500 DEG C or more, be nucleated to 3D
The surface of layer performs etching.
If the time for being passed through trimethyl gallium every time is too short, the thickness that will lead to the 3D nucleating layer grown is excessively thin.If every
The secondary overlong time for being passed through trimethyl gallium, the then thickness that will lead to the 3D nucleating layer grown are blocked up.
Further, growth revolving speed when 3D nucleating layer is 800~1200r/min.If growing revolving speed is lower than 800r/min,
Or growth revolving speed is higher than 1200r/min, will affect the uniformity and consistency of the 3D nucleating layer grown.
Further, when growing the 3D nucleating layer, molar flow ratio (the hereinafter referred to as V/ of group-v element and group iii elements
III ratio) it is 200~3000.
In the present embodiment, V/III ratio when growing the 3D nucleating layer is the molar flow of ammonia and trimethyl gallium
Than.
Step 104 grows undoped GaN layer on 3D nucleating layer.
Specifically, reaction chamber temperature is controlled at 1000~1200 DEG C, pressure is controlled in 100~500torr, growth thickness
For the undoped GaN layer of 0.5~1.5um.When growing undoped GaN layer, V/III ratio is 200~3000, and growth revolving speed is
800~1200r/min.
Step 105 grows N-type layer in undoped GaN layer.
Specifically, reaction chamber temperature is controlled at 950~1150 DEG C, pressure is controlled in 300~500Torr, growth thickness
For the N-type GaN layer of 1.5~3.5um.When growing undoped GaN layer, growth time is 5~15min, and V/III ratio is 400-
3000, growth revolving speed is 1000~1200r/min.
Further to after executing the step 105, which can also include:
Step 106 grows shallow well layer in N-type layer.
In the present embodiment, shallow well layer is the superlattice structure in n period, 5≤n≤20.Each superlattice structure wraps
Include the InGaN layer and GaN layer successively grown.
Specifically, step 106 may include:
By reaction chamber temperature control at 750~850 DEG C, in 100~500Torr, growth thickness is 1~4nm for pressure control
InGaN layer.Grow InGaN layer when, growth time 10~20min, V/III ratio be 500~10000, growth revolving speed be 800~
1000r/min。
By reaction chamber temperature control at 850~950 DEG C, pressure control in 100~500Torr, growth thickness is 10~
The GaN layer of 30nm.When growing GaN layer, growth time is 10min~20min, and V/III ratio is 500~10000, and growth revolving speed is
800~1000r/min.
Step 107 grows multiple quantum well layer on shallow well layer.
In the present embodiment, multiple quantum well layer is the superlattice structure in m period, 6≤n≤15.Each superlattice structure
The GaN quantum barrier layer for including InGaN quantum well layer and being grown on InGaN quantum well layer.
Specifically, step 107 may include:
By reaction chamber temperature control at 700-850 DEG C, in 100~500Torr, growth thickness is 2~5nm's for pressure control
InGaN quantum well layer.When growing InGaN quantum well layer, V/III ratio is 2000~20000.
By reaction chamber temperature control at 850~950 DEG C, in 100~500Torr, growth thickness is 5~15nm for pressure control
GaN quantum barrier layer.When growing GaN quantum barrier layer, V/III ratio is 2000~20000.
In the present embodiment, P-type layer may include low temperature P-type layer, electronic barrier layer, high temperature P-type layer and p-type contact layer,
Therefore, the manufacturing method further include:
Step 108, the growing low temperature P-type layer on multiple quantum well layer.
In the present embodiment, low temperature P-type layer is to mix the GaN layer of Mg.
Specifically, reaction chamber temperature is controlled at 700 DEG C~800 DEG C, pressure is controlled in 100~600torr, growth thickness
For the low temperature P-type layer of 30nm~120nm.When growing low temperature P-type layer, growth time be 3~15min, V/III ratio be 1000~
4000。
Step 109 grows electronic barrier layer in low temperature P-type layer.
In the present embodiment, electronic barrier layer is the AlGaN layer for mixing Mg.
Specifically, reaction chamber temperature is controlled at 900 DEG C~1000 DEG C, pressure is controlled in 50~300torr, growth thickness
For the electronic barrier layer of 50nm~150nm.Grow electronic barrier layer when, growth time be 4~15min, V/III ratio be 1000~
10000。
Step 110 grows high temperature P-type layer on electronic barrier layer.
In the present embodiment, high temperature P-type layer is to mix the GaN layer of Mg.
Specifically, reaction chamber temperature is controlled at 900 DEG C~1050 DEG C, in 100~500torr, growth is thick for pressure control
Degree is the high temperature P-type layer of 50nm~150nm.Grow high temperature P-type layer when, growth time be 10~20min, V/III ratio be 500~
4000。
Step 111, the growing P-type contact layer in high temperature P-type layer.
In the present embodiment, p-type contact layer is the GaN layer of heavily doped Mg.
Specifically, reaction chamber temperature is controlled at 700 DEG C~850 DEG C, pressure is controlled in 100~500torr, growth thickness
For the p-type contact layer of 3nm~10nm.When growing P-type contact layer, growth time be 0.5~5min, V/III ratio be 10000~
20000。
After above-mentioned steps completion, the temperature of reaction chamber is down to 600~900 DEG C, is carried out at annealing in nitrogen atmosphere
10min is managed, room temperature is then gradually decreased to, terminates the epitaxial growth of light emitting diode.
After the growth for terminating epitaxial wafer, epitaxial wafer is cleaned, is deposited, the semiconductor technologies system such as lithography and etching
It is made the LED chip that single size is 10*34mil.It is found after XRD is tested, using manufacture provided in this embodiment
The first LED chip that method produces is compared with the second LED chip produced using existing manufacturing method, the first LED core
The face the XRD-002 half-breadth of piece, which reduces by 17,102 face half-breadths, reduces by 13.It is found after LED core built-in testing, the first LED chip and second
LED chip is compared, and antistatic effect improves 2%~5%.
When growing 3D nucleating layer, ammonia is continually fed into reaction chamber, at interval of being passed through a trimethyl for a period of time
Gallium.Be equivalent to by 3D nucleating layer be segmented grow, it is every growth a period of time 3D nucleating layer after, i.e., by ammonia to the 3D grown at
The surface of stratum nucleare is handled, it is possible to reduce the residual in 3D nucleating layer surface Ga source, so that the crystal quality of 3D nucleating layer is improved,
Improve antistatic effect of the LED under high current density, the final luminous efficiency for improving LED.
The embodiment of the invention provides the manufacturing method of another LED epitaxial slice, the manufacturing method and above-mentioned reality
The manufacturing method applied in example is essentially identical, the difference is that only:
In the present embodiment, reaction chamber temperature is controlled at 1000~1200 DEG C, pressure control in 100~500torr, to
Be continually fed into ammonia in reaction chamber, be passed through a trimethyl gallium at interval of 8~15s, be passed through every time trimethyl gallium time be 6~
14s, the number for being passed through trimethyl gallium is 30~90 times, and growth thickness is the 3D nucleating layer of 300~500nm.Grow 3D nucleating layer
When, growth revolving speed is 800~1200r/min, and V/III ratio is 200~3000.
After the growth for terminating epitaxial wafer, epitaxial wafer is cleaned, is deposited, the semiconductor technologies system such as lithography and etching
It is made the LED chip that single size is 10*34mil.It is found after XRD is tested, using manufacture provided in this embodiment
The third LED chip that method produces is compared with the second LED chip produced using existing manufacturing method, third LED core
The face the XRD-002 half-breadth of piece, which reduces by 12,102 face half-breadths, reduces by 11.It is found after LED core built-in testing, third LED chip and second
LED chip is compared, and antistatic effect promotes 2%~4%.
When growing 3D nucleating layer, ammonia is continually fed into reaction chamber, at interval of being passed through a trimethyl for a period of time
Gallium.Be equivalent to by 3D nucleating layer be segmented grow, it is every growth a period of time 3D nucleating layer after, i.e., by ammonia to the 3D grown at
The surface of stratum nucleare is handled, it is possible to reduce the residual in 3D nucleating layer surface Ga source, so that the crystal quality of 3D nucleating layer is improved,
Improve antistatic effect of the LED under high current density, the final luminous efficiency for improving LED.
The foregoing is merely a prefered embodiment of the invention, is not intended to limit the invention, all in the spirit and principles in the present invention
Within, any modification, equivalent replacement, improvement and so on should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of manufacturing method of LED epitaxial slice, which is characterized in that the manufacturing method includes:
One substrate is provided；
Grown buffer layer over the substrate；
3D nucleating layer is grown on the buffer layer, when growing the 3D nucleating layer, ammonia is continually fed into reaction chamber, is interrupted
It is passed through trimethyl gallium to property；
Undoped GaN layer, N-type layer, multiple quantum well layer and P-type layer are successively grown on the 3D nucleating layer.
2. the manufacturing method according to claim 1, which is characterized in that described to be passed through trimethyl gallium by phased manner, comprising:
A trimethyl gallium is passed through at interval of 8~15s.
3. manufacturing method according to claim 2, which is characterized in that be passed through every time the trimethyl gallium time be 4~
14s。
4. manufacturing method according to claim 3, which is characterized in that the number for being passed through the trimethyl gallium is 30~90
It is secondary.
5. the manufacturing method according to claim 1, which is characterized in that the 3D nucleating layer with a thickness of 300~500nm.
6. the manufacturing method according to claim 1, which is characterized in that the growth temperature of the 3D nucleating layer be 1000~
1200℃。
7. the manufacturing method according to claim 1, which is characterized in that the growth pressure of the 3D nucleating layer be 100~
500torr。
8. the manufacturing method according to claim 1, which is characterized in that the growth revolving speed of the 3D nucleating layer be 800~
1200r/min。
9. the manufacturing method according to claim 1, which is characterized in that when growing the 3D nucleating layer, group-v element and three
The molar flow ratio of race's element is 200~3000.
10. the manufacturing method according to claim 1, which is characterized in that before growing 3D nucleating layer on the buffer layer,
The manufacturing method further include:
The reaction chamber temperature is increased to 900~1100 DEG C, the chamber pressure is controlled in 50~200torr, to institute
It states buffer layer and carries out 3~10min of annealing；
Ammonia 2s~30s is passed through into the reaction chamber.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148652A (en) * | 2019-03-26 | 2019-08-20 | 华灿光电股份有限公司 | The preparation method and epitaxial wafer of the epitaxial wafer of light emitting diode |
| CN111933762A (en) * | 2020-07-23 | 2020-11-13 | 厦门士兰明镓化合物半导体有限公司 | Epitaxial structure and manufacturing method thereof |
| CN112466999A (en) * | 2020-10-29 | 2021-03-09 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and manufacturing method thereof |
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