CN105220131A - Air pulse legal system is for the method for thin film transistor IGZO semiconductor film layer - Google Patents
Air pulse legal system is for the method for thin film transistor IGZO semiconductor film layer Download PDFInfo
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- CN105220131A CN105220131A CN201510655094.0A CN201510655094A CN105220131A CN 105220131 A CN105220131 A CN 105220131A CN 201510655094 A CN201510655094 A CN 201510655094A CN 105220131 A CN105220131 A CN 105220131A
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Abstract
The invention discloses the method for a kind of air pulse legal system for thin film transistor IGZO semiconductor film layer, comprise the steps: 1) in PEMOCVD reaction chamber, chamber pressure is answered to be 5 × 10-4-10-3Pa, growth temperature is 200-400 DEG C, the microwave power of plasma generation is 400-600W, pass into the O2 of for some time in advance, form intensive nucleation site on the surface of a substrate; 2) take Ar as carrier, with the MO source containing In, Ga, Zn atom and O2 for reaction source gas pulsed is passed in PEMOCVD reaction chamber, wherein O2 reaction source gas pulse persistance passes into, gas pulses interval, MO source containing In, Ga, Zn atom passes into, and obtains IGZO semiconductor film layer at Grown.The present invention is based on the thin film transistor IGZO semiconductor film layer that PEMOCVD system pulses air-flow method prepares, growth defect density is low, Heat stability is good, and carrier mobility is high, thus improves the switch performance of thin film transistor.
Description
Technical field
The present invention relates to the technical field of thin film transistor, be related specifically to the method for a kind of air pulse legal system for thin film transistor IGZO semiconductor film layer.
Background technology
High performance thin film transistor (TFT) backplane technology is the common technology and the core technology that are shown as flat pannel display (FPD) industry of representative with liquid-crystal display (LCD) and active matrix driving Organic Light Emitting Diode (AMOLED), is also that FPD industry is improved the quality of products, reduces the important step of production cost.Along with the fast development of large size, high resolution, 3D technique of display, it is more and more higher to the requirement of TFT backplate.But traditional non-crystalline silicon tft mobility is lower, high resolving power display cannot be realized; Multi-crystal TFT mobility is high, but its there is complex manufacturing, facility investment is high, lack of homogeneity, good article rate are low etc. is difficult to the problem that overcomes, realizes large-area displays cost higher; Metal oxide TFT (MOTFT) enjoys industry to pay close attention in recent years, and its mobility is higher, technique is simple, cost is low, becomes the new focus of current industry.
In prior art, MOTFT structure as shown in Figure 1, comprises a substrate 11, on substrate successively depositing metal oxide 12 semiconductor film layer, source electrode 13 and drain electrode 14, gate insulation layer 15, gate metal 16.Wherein, IGZO is current most study and the metal oxide metal oxide compound of most promising MOTFT, the extensive concern of research institution and industry member is just received the flexible and transparent TFT prepared based on IGZO from Tokyo polytechnical university Hosono in 2004 first time report, and by the application of developing in display field, especially in New Type Display Devices technology.But in the prior art, IGZO generally adopts magnetically controlled sputter method to deposit, how the subject matter of research improves the quality of forming film of IGZO and the homogeneity of sputtering if concentrating on.One is the target of preparation component high uniformity, and the sintering process of target will determine the height of target quality.As patent 201280022557 proposes a kind of method preparing multi-component oxide semiconductor sputtering target material, the carrier mobility of oxide semiconductor can be improved to 30cm
2/ VS.Secondly, optimizing sputtering system is the key obtaining high-quality thin film, and the factors such as the introduction method of control sputtering power, target and substrate distance, gas are one of feasible methods regulating and controlling film quality.But adopt in the IGZO film of magnetically controlled sputter method deposition preparation and there is very high defect state density, interface problem is complicated, has a strong impact on stability and the reliability of IGZO-TFT device, and carrier mobility is on the low side (is less than 50cm
2/ VS), this can't meet the high explanation of display screen, high-contrast, the requirement of low-response time.
Summary of the invention
The object of the present invention is to provide a kind of air pulse legal system for the method for thin film transistor IGZO semiconductor film layer, be intended to solve adopt in the IGZO semiconductor film of magnetically controlled sputter method deposition preparation and there is very high defect state density, interface problem complexity makes to have a strong impact on the stability of I film transistor device and the problem of reliability.
For this reason, the present invention is by the following technical solutions:
Air pulse legal system, for a method for thin film transistor IGZO semiconductor film layer, comprises the steps:
1) in PEMOCVD reaction chamber, chamber pressure is answered to be 5 × 10
-4-10
-3pa, growth temperature is 200-400 DEG C, and the microwave power of plasma generation is 400-600W, passes into the O of for some time in advance
2, form intensive nucleation site on the surface of a substrate;
2) take Ar as carrier, with the MO source containing In, Ga, Zn atom and O
2for reaction source gas pulsed is passed in PEMOCVD reaction chamber, wherein O
2reaction source gas pulse persistance passes into, and the gas pulses interval, MO source containing In, Ga, Zn atom passes into, and in the auxiliary lower concurrent biochemical reaction of cracking of plasma body, obtains IGZO semiconductor film layer at Grown.
Preferably, the mode of operation that passes in PEMOCVD reaction chamber of the described gas pulses interval, MO source containing In, Ga, Zn atom is as follows:
T
1in time, the MO source pulse containing In, Ga, Zn atom is closed;
T
2in time, the MO source pulse containing In, Ga, Zn atom is opened, and the MO source gas containing In, Ga, Zn atom is passed in PEMOCVD reaction chamber, O
2react with the MO source containing In, Ga, Zn atom, substrate is formed one deck forming core layer film;
T
3in time, the MO source pulse containing In, Ga, Zn atom is closed, and the atomic migration of forming core layer film, to minimum energy point, forms stable state;
T
4in time, the MO source pulse containing In, Ga, Zn atom is opened, on forming core layer film, and grown epitaxial layer, the MO source pulse then containing In, Ga, Zn atom is closed, and epitaxial film atomic migration is to stable state;
T
1-t
4for one-period, repeat cycle certain hour, to obtain the IGZO semiconductor film layer of specific thicknesses.
Preferably, described t
1for 15s-25s; t
2for 3s-8s; t
3for 15s-25s; t
4for 15s-25s.
Preferably, the time of described repeat cycle is 10min-50min, and the thickness of the IGZO semiconductor film layer of acquisition is 10nm-50nm.
Preferably, described substrate is the transparent glass substrate cleaned up.
The present invention adopts above technical scheme, based on the IGZO semiconductor film layer of PEMOCVD system pulses air-flow legal system for thin film transistor, high-quality IGZO semiconductor film layer can be obtained, by adjustment pulse duration and interpulse period, for In atom, Ga atom, Zn atom and O atom provide the sufficient surface transport time, and the growth pattern of extension after adopting first forming core, be conducive to forming the complete epitaxial film of high quality in the horizontal direction, Lacking oxygen dislocation in reduction epitaxial film and the density of stacking fault, thus it is high to obtain carrier mobility, the IGZO semiconductor film layer that defect state density is low, improve stability and the reliability of thin film transistor.And by controlling the time of repetition pulse repeat cycle, or the semiconductor film layer of specific thicknesses.Meanwhile, in PEMOCVD reaction chamber, utilize the cracking of plasmaassisted source, can low temperature depositing, and there is higher production efficiency; The thickness of controlled made membrane, can grow very thin film; The structure of multilayer film superposition can be realized; The accurate control of polynary mixed crystal composition can be carried out; The scale operation of compound semiconductor materials can be carried out; Reactant gas source does not adopt halogenide, not containing strong corrosive material in reaction end gas.
Accompanying drawing explanation
Fig. 1 is the structural representation of metal oxide thin-film transistor in prior art.
Fig. 2 is the time diagram of the pulsed mode of reaction source gas of the present invention.
Embodiment
In order to make object of the present invention, feature and advantage more clear, below in conjunction with drawings and Examples, explanation is specifically made to the specific embodiment of the present invention, in the following description, set forth a lot of concrete details so that understand the present invention fully, but the present invention can implement in other modes being much different from description.Therefore, the present invention is not by the restriction of the concrete enforcement of following discloses.
Air pulse legal system, for a method for thin film transistor IGZO semiconductor film layer, comprises the steps:
1) in PEMOCVD reaction chamber, chamber pressure is answered to be 5 × 10-4-10
-3pa, growth temperature is 200-400 DEG C, and the microwave power of plasma generation is 400-600W, passes into the O of for some time in advance
2, form intensive nucleation site on the surface of a substrate;
2) take Ar as carrier, with the MO source containing In, Ga, Zn atom and O2 for reaction source gas pulsed is passed in PEMOCVD reaction chamber, wherein O
2reaction source gas pulse persistance passes into, and the gas pulses interval, MO source containing In, Ga, Zn atom passes into, and in the auxiliary lower concurrent biochemical reaction of cracking of plasma body, obtains IGZO semiconductor film layer at Grown.
Wherein, as shown in Figure 2, the mode of operation that passes in PEMOCVD reaction chamber of the described gas pulses interval, MO source containing In, Ga, Zn atom is as follows:
T
1in time, the MO source pulse containing In, Ga, Zn atom is closed;
T
2in time, the MO source pulse containing In, Ga, Zn atom is opened, and the MO source gas containing In, Ga, Zn atom is passed in PEMOCVD reaction chamber, and O2 reacts with the MO source containing In, Ga, Zn atom, and substrate is formed one deck forming core layer film;
T
3in time, the MO source pulse containing In, Ga, Zn atom is closed, and the atomic migration of forming core layer film, to minimum energy point, forms stable state;
T
4in time, the MO source pulse containing In, Ga, Zn atom is opened, on forming core layer film, and grown epitaxial layer, the MO source pulse then containing In, Ga, Zn atom is closed, and epitaxial film atomic migration is to stable state;
T
1-t
4for one-period, repeat cycle certain hour, to obtain the IGZO semiconductor film layer of specific thicknesses.
Wherein, described t
1for 15s-25s; t
2for 3s-8s; t
3for 15s-25s; t
4for 15s-25s.
Wherein, the time of described repeat cycle is 10min-50min, and the thickness of the IGZO semiconductor film layer of acquisition is 10nm-50nm.
Wherein, described substrate is the transparent glass substrate cleaned up.
Plasma reinforcing and metal organic chemical vapor deposition (PEMOCVD) prepares the conventional experimental installation of semiconductor film, is the effective experimental program of the current semiconductor material of preparation.It is using the organic compound of III race, II race's element and V, VI race's elemental gas as growth source material, on substrate, carry out organic chemical vapor extension in pyrolysis mode, grow various III-V race, the thin layer monocrystalline of group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution, crystallite, amorphous and quanta point material.
The present invention is based on the IGZO semiconductor film layer of PEMOCVD system pulses air-flow legal system for thin film transistor, high-quality IGZO semiconductor film layer can be obtained, by adjustment pulse duration and interpulse period, for In atom, Ga atom, Zn atom and O atom provide the sufficient surface transport time, and the growth pattern of extension after adopting first forming core, be conducive to forming the complete epitaxial film of high quality in the horizontal direction, Lacking oxygen dislocation in reduction epitaxial film and the density of stacking fault, thus it is high to obtain carrier mobility, the IGZO semiconductor film layer that defect state density is low, improve stability and the reliability of thin film transistor.And by controlling the time of repetition pulse repeat cycle, or the semiconductor film layer of specific thicknesses.Meanwhile, in PEMOCVD reaction chamber, utilize the cracking of plasmaassisted source, can low temperature depositing, and there is higher production efficiency; The thickness of controlled made membrane, can grow very thin film; The structure of multilayer film superposition can be realized; The accurate control of polynary mixed crystal composition can be carried out; The scale operation of compound semiconductor materials can be carried out; Reactant gas source does not adopt halogenide, not containing strong corrosive material in reaction end gas.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (5)
1. air pulse legal system is for a method for thin film transistor IGZO semiconductor film layer, it is characterized in that, comprises the steps:
1) in PEMOCVD reaction chamber, chamber pressure is answered to be 5 × 10
-4-10
-3pa, growth temperature is 200-400 DEG C, and the microwave power of plasma generation is 400-600W, passes into the O of for some time in advance
2, form intensive nucleation site on the surface of a substrate;
2) take Ar as carrier, with the MO source containing In, Ga, Zn atom and O
2for reaction source gas pulsed is passed in PEMOCVD reaction chamber, wherein O
2reaction source gas pulse persistance passes into, and the gas pulses interval, MO source containing In, Ga, Zn atom passes into, and in the auxiliary lower concurrent biochemical reaction of cracking of plasma body, obtains IGZO semiconductor film layer at Grown.
2. a kind of air pulse legal system according to claim 1 is for the method for thin film transistor IGZO semiconductor film layer, it is characterized in that, the mode of operation that the described gas pulses interval, MO source containing In, Ga, Zn atom passes in PEMOCVD reaction chamber is as follows:
T
1in time, the MO source pulse containing In, Ga, Zn atom is closed;
T
2in time, the MO source pulse containing In, Ga, Zn atom is opened, and the MO source gas containing In, Ga, Zn atom is passed in PEMOCVD reaction chamber, O
2react with the MO source containing In, Ga, Zn atom, substrate is formed one deck forming core layer film;
T
3in time, the MO source pulse containing In, Ga, Zn atom is closed, and the atomic migration of forming core layer film, to minimum energy point, forms stable state;
T
4in time, the MO source pulse containing In, Ga, Zn atom is opened, on forming core layer film, and grown epitaxial layer, the MO source pulse then containing In, Ga, Zn atom is closed, and epitaxial film atomic migration is to stable state;
T
1-t
4for one-period, repeat cycle certain hour, to obtain the IGZO semiconductor film layer of specific thicknesses.
3. a kind of air pulse legal system according to claim 2 is for the method for thin film transistor IGZO semiconductor film layer, it is characterized in that, described t
1for 15s-25s; t
2for 3s-8s; t
3for 15s-25s; t
4for 15s-25s.
4. a kind of air pulse legal system according to claim 2 is for the method for thin film transistor IGZO semiconductor film layer, it is characterized in that, the time of described repeat cycle is 10min-50min, and the thickness of the IGZO semiconductor film layer of acquisition is 10nm-50nm.
5. a kind of air pulse legal system according to claim 1 is for the method for thin film transistor IGZO semiconductor film layer, it is characterized in that, described substrate is the transparent glass substrate cleaned up.
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| CN109326698A (en) * | 2018-09-27 | 2019-02-12 | 华灿光电（浙江）有限公司 | A kind of manufacturing method of LED epitaxial slice |
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| CN105220131B (en) | 2018-04-10 |
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