CN109642309B - 高精准度蔽荫掩模沉积系统及其方法 - Google Patents

高精准度蔽荫掩模沉积系统及其方法 Download PDF

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Publication number
CN109642309B
CN109642309B CN201780042868.XA CN201780042868A CN109642309B CN 109642309 B CN109642309 B CN 109642309B CN 201780042868 A CN201780042868 A CN 201780042868A CN 109642309 B CN109642309 B CN 109642309B
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China
Prior art keywords
shadow mask
substrate
chuck
major surface
vaporized atoms
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CN201780042868.XA
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English (en)
Chinese (zh)
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CN109642309A (zh
Inventor
M·阿南丹
A·高希
F·瓦然
E·多诺霍
I·哈尤林
T·阿里
K·泰斯
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eMagin Corp
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eMagin Corp
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Priority claimed from US15/597,635 external-priority patent/US10072328B2/en
Priority claimed from US15/602,939 external-priority patent/US10386731B2/en
Application filed by eMagin Corp filed Critical eMagin Corp
Priority claimed from PCT/IB2017/054481 external-priority patent/WO2017203502A2/en
Publication of CN109642309A publication Critical patent/CN109642309A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
CN201780042868.XA 2017-05-17 2017-07-24 高精准度蔽荫掩模沉积系统及其方法 Active CN109642309B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/597,635 US10072328B2 (en) 2016-05-24 2017-05-17 High-precision shadow-mask-deposition system and method therefor
US15/597,635 2017-05-17
US15/602,939 US10386731B2 (en) 2016-05-24 2017-05-23 Shadow-mask-deposition system and method therefor
US15/602,939 2017-05-23
PCT/IB2017/054481 WO2017203502A2 (en) 2016-05-24 2017-07-24 High-precision shadow-mask-deposition system and method therefor

Publications (2)

Publication Number Publication Date
CN109642309A CN109642309A (zh) 2019-04-16
CN109642309B true CN109642309B (zh) 2021-08-17

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CN201780042868.XA Active CN109642309B (zh) 2017-05-17 2017-07-24 高精准度蔽荫掩模沉积系统及其方法

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Country Link
JP (1) JP7134095B2 (enExample)
KR (1) KR102378672B1 (enExample)
CN (1) CN109642309B (enExample)
TW (1) TWI737795B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
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CN111272089B (zh) * 2020-03-03 2022-06-28 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
CN114524406B (zh) * 2021-12-23 2024-10-29 浙江大学 一种通过操纵衬底宏观移动轨迹实现纳米结构书写的方法
KR102787147B1 (ko) * 2023-05-23 2025-03-25 가천대학교 산학협력단 섀도우 마스크를 이용한 인-시튜 금속 메쉬 그리드를 형성하는 반도체 제조방법 및 그 방법에 의하여 형성되는 반도체 소자

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RU2155204C2 (ru) * 1998-09-23 2000-08-27 Институт проблем химической физики РАН Органический электролюминесцентный материал, излучающий в красной области спектра
US6287436B1 (en) * 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
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WO2010113102A9 (en) * 2009-04-03 2012-03-29 Osram Opto Semiconductors Gmbh An arrangement for holding a substrate in a material deposition apparatus
CN103154304A (zh) * 2010-09-30 2013-06-12 佳能特机株式会社 成膜装置
CN103882381A (zh) * 2012-12-21 2014-06-25 三星显示有限公司 沉积设备及将沉积材料沉积在基板上的方法
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US6287436B1 (en) * 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
WO2000008228A1 (en) * 1998-08-04 2000-02-17 Cvc, Inc. Dual collimator physical-vapor deposition apparatus
RU2155204C2 (ru) * 1998-09-23 2000-08-27 Институт проблем химической физики РАН Органический электролюминесцентный материал, излучающий в красной области спектра
WO2002024321A1 (en) * 2000-09-22 2002-03-28 General Electric Company Combinatorial coating systems and methods
CN101090997A (zh) * 2005-02-23 2007-12-19 三井造船株式会社 成膜装置的掩模对位机构以及成膜装置
US7615161B2 (en) * 2005-08-19 2009-11-10 General Electric Company Simplified way to manufacture a low cost cast type collimator assembly
WO2010113102A9 (en) * 2009-04-03 2012-03-29 Osram Opto Semiconductors Gmbh An arrangement for holding a substrate in a material deposition apparatus
CN103154304A (zh) * 2010-09-30 2013-06-12 佳能特机株式会社 成膜装置
CN103882381A (zh) * 2012-12-21 2014-06-25 三星显示有限公司 沉积设备及将沉积材料沉积在基板上的方法
WO2016048191A1 (en) * 2014-09-25 2016-03-31 "Lascom" Limited Liability Company Method of applying electrically conductive bus bars onto low-emissivity glass coating
CN107002233A (zh) * 2014-11-17 2017-08-01 应用材料公司 具有用于涂布工艺的分离掩模的掩蔽布置以及卷材涂布设施

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Publication number Publication date
KR102378672B1 (ko) 2022-03-24
KR20200008936A (ko) 2020-01-29
TW201900901A (zh) 2019-01-01
TWI737795B (zh) 2021-09-01
JP7134095B2 (ja) 2022-09-09
CN109642309A (zh) 2019-04-16
JP2019517623A (ja) 2019-06-24

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