TWI737795B - 高精準度蔽蔭遮罩沉積系統及其方法 - Google Patents

高精準度蔽蔭遮罩沉積系統及其方法 Download PDF

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Publication number
TWI737795B
TWI737795B TW106128730A TW106128730A TWI737795B TW I737795 B TWI737795 B TW I737795B TW 106128730 A TW106128730 A TW 106128730A TW 106128730 A TW106128730 A TW 106128730A TW I737795 B TWI737795 B TW I737795B
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TW
Taiwan
Prior art keywords
substrate
shadow mask
chuck
main surface
mask
Prior art date
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TW106128730A
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English (en)
Chinese (zh)
Other versions
TW201900901A (zh
Inventor
阿曼庫瑪 Ｐ 高斯
費德瑞奇 維詹
慕尼瑟米 安納丹
艾文 當納高
伊葉思 Ｉ 海魯林
泰瑞 阿里
凱瑞 泰斯
Original Assignee
美商伊麥傑公司
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Publication date
Priority claimed from US15/597,635 external-priority patent/US10072328B2/en
Priority claimed from US15/602,939 external-priority patent/US10386731B2/en
Priority claimed from US15/655,544 external-priority patent/US11275315B2/en
Application filed by 美商伊麥傑公司 filed Critical 美商伊麥傑公司
Publication of TW201900901A publication Critical patent/TW201900901A/zh
Application granted granted Critical
Publication of TWI737795B publication Critical patent/TWI737795B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW106128730A 2017-05-17 2017-08-24 高精準度蔽蔭遮罩沉積系統及其方法 TWI737795B (zh)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US15/597,635 US10072328B2 (en) 2016-05-24 2017-05-17 High-precision shadow-mask-deposition system and method therefor
US15/597,635 2017-05-17
US15/602,939 US10386731B2 (en) 2016-05-24 2017-05-23 Shadow-mask-deposition system and method therefor
US15/602,939 2017-05-23
US15/655,544 US11275315B2 (en) 2016-05-24 2017-07-20 High-precision shadow-mask-deposition system and method therefor
US15/655,544 2017-07-20

Publications (2)

Publication Number Publication Date
TW201900901A TW201900901A (zh) 2019-01-01
TWI737795B true TWI737795B (zh) 2021-09-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW106128730A TWI737795B (zh) 2017-05-17 2017-08-24 高精準度蔽蔭遮罩沉積系統及其方法

Country Status (4)

Country Link
JP (1) JP7134095B2 (enExample)
KR (1) KR102378672B1 (enExample)
CN (1) CN109642309B (enExample)
TW (1) TWI737795B (enExample)

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* Cited by examiner, † Cited by third party
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CN111272089B (zh) * 2020-03-03 2022-06-28 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
CN114524406B (zh) * 2021-12-23 2024-10-29 浙江大学 一种通过操纵衬底宏观移动轨迹实现纳米结构书写的方法
KR102787147B1 (ko) * 2023-05-23 2025-03-25 가천대학교 산학협력단 섀도우 마스크를 이용한 인-시튜 금속 메쉬 그리드를 형성하는 반도체 제조방법 및 그 방법에 의하여 형성되는 반도체 소자

Citations (5)

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CN1522098A (zh) * 2002-12-03 2004-08-18 精工爱普生株式会社 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置
CN103282543A (zh) * 2011-03-10 2013-09-04 夏普株式会社 蒸镀装置、蒸镀方法和有机el显示装置
CN103582466A (zh) * 2011-05-03 2014-02-12 帕尔玛兹科学公司 腔内可植入表面和其制造方法
TW201614091A (en) * 2014-10-14 2016-04-16 Applied Materials Inc Apparatus for high compressive stress film deposition to improve kit life

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CN1522098A (zh) * 2002-12-03 2004-08-18 精工爱普生株式会社 掩模蒸镀方法及装置、掩模及其制造方法、显示板制造装置
CN103282543A (zh) * 2011-03-10 2013-09-04 夏普株式会社 蒸镀装置、蒸镀方法和有机el显示装置
CN103582466A (zh) * 2011-05-03 2014-02-12 帕尔玛兹科学公司 腔内可植入表面和其制造方法
TW201614091A (en) * 2014-10-14 2016-04-16 Applied Materials Inc Apparatus for high compressive stress film deposition to improve kit life

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KR102378672B1 (ko) 2022-03-24
KR20200008936A (ko) 2020-01-29
TW201900901A (zh) 2019-01-01
JP7134095B2 (ja) 2022-09-09
CN109642309A (zh) 2019-04-16
JP2019517623A (ja) 2019-06-24
CN109642309B (zh) 2021-08-17

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