JP7134095B2 - 高精度シャドーマスク堆積システム及びその方法 - Google Patents

高精度シャドーマスク堆積システム及びその方法 Download PDF

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JP7134095B2
JP7134095B2 JP2018561973A JP2018561973A JP7134095B2 JP 7134095 B2 JP7134095 B2 JP 7134095B2 JP 2018561973 A JP2018561973 A JP 2018561973A JP 2018561973 A JP2018561973 A JP 2018561973A JP 7134095 B2 JP7134095 B2 JP 7134095B2
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substrate
shadow mask
chuck
plane
major surface
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Japanese (ja)
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JP2019517623A5 (enExample
JP2019517623A (ja
Inventor
ムニサミー・アナンダン
アマルクマール・ゴーシュ
フリドリッヒ・ヴァザン
エヴァン・ドノヒュー
イリヤス・カイルリン
タリク・アリ
ケリー・タイス
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イマジン・コーポレイション
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Priority claimed from US15/597,635 external-priority patent/US10072328B2/en
Priority claimed from US15/602,939 external-priority patent/US10386731B2/en
Application filed by イマジン・コーポレイション filed Critical イマジン・コーポレイション
Priority claimed from PCT/IB2017/054481 external-priority patent/WO2017203502A2/en
Publication of JP2019517623A publication Critical patent/JP2019517623A/ja
Publication of JP2019517623A5 publication Critical patent/JP2019517623A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
JP2018561973A 2017-05-17 2017-07-24 高精度シャドーマスク堆積システム及びその方法 Active JP7134095B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/597,635 US10072328B2 (en) 2016-05-24 2017-05-17 High-precision shadow-mask-deposition system and method therefor
US15/597,635 2017-05-17
US15/602,939 US10386731B2 (en) 2016-05-24 2017-05-23 Shadow-mask-deposition system and method therefor
US15/602,939 2017-05-23
PCT/IB2017/054481 WO2017203502A2 (en) 2016-05-24 2017-07-24 High-precision shadow-mask-deposition system and method therefor

Publications (3)

Publication Number Publication Date
JP2019517623A JP2019517623A (ja) 2019-06-24
JP2019517623A5 JP2019517623A5 (enExample) 2020-09-10
JP7134095B2 true JP7134095B2 (ja) 2022-09-09

Family

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JP2018561973A Active JP7134095B2 (ja) 2017-05-17 2017-07-24 高精度シャドーマスク堆積システム及びその方法

Country Status (4)

Country Link
JP (1) JP7134095B2 (enExample)
KR (1) KR102378672B1 (enExample)
CN (1) CN109642309B (enExample)
TW (1) TWI737795B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111272089B (zh) * 2020-03-03 2022-06-28 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
CN114524406B (zh) * 2021-12-23 2024-10-29 浙江大学 一种通过操纵衬底宏观移动轨迹实现纳米结构书写的方法
KR102787147B1 (ko) * 2023-05-23 2025-03-25 가천대학교 산학협력단 섀도우 마스크를 이용한 인-시튜 금속 메쉬 그리드를 형성하는 반도체 제조방법 및 그 방법에 의하여 형성되는 반도체 소자

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070024831A1 (en) 2005-07-27 2007-02-01 International Business Machines Corporation A method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices
WO2014002841A1 (ja) 2012-06-26 2014-01-03 シャープ株式会社 マスクフレーム
WO2015186796A1 (ja) 2014-06-05 2015-12-10 シャープ株式会社 蒸着方法及び蒸着装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4676193A (en) * 1984-02-27 1987-06-30 Applied Magnetics Corporation Stabilized mask assembly for direct deposition of a thin film pattern onto a substrate
US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JPH1050584A (ja) * 1996-08-07 1998-02-20 Nikon Corp マスク保持装置
US6287436B1 (en) * 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
RU2155204C2 (ru) * 1998-09-23 2000-08-27 Институт проблем химической физики РАН Органический электролюминесцентный материал, излучающий в красной области спектра
JP2004508927A (ja) * 2000-09-22 2004-03-25 ゼネラル・エレクトリック・カンパニイ コンビナトリアルコーティング装置及び方法
JP2004119064A (ja) * 2002-09-24 2004-04-15 Fujitsu Ltd 薄膜形成装置および薄膜形成方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
US20050006223A1 (en) * 2003-05-07 2005-01-13 Robert Nichols Sputter deposition masking and methods
JP4860909B2 (ja) * 2004-05-25 2012-01-25 キヤノン株式会社 マスク構造体
JP4609756B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 成膜装置のマスク位置合わせ機構および成膜装置
US7615161B2 (en) * 2005-08-19 2009-11-10 General Electric Company Simplified way to manufacture a low cost cast type collimator assembly
EP2168644B1 (en) * 2008-09-29 2014-11-05 Applied Materials, Inc. Evaporator for organic materials and method for evaporating organic materials
US8808402B2 (en) * 2009-04-03 2014-08-19 Osram Opto Semiconductors Gmbh Arrangement for holding a substrate in a material deposition apparatus
JP5620146B2 (ja) 2009-05-22 2014-11-05 三星ディスプレイ株式會社Ｓａｍｓｕｎｇ Ｄｉｓｐｌａｙ Ｃｏ．，Ｌｔｄ． 薄膜蒸着装置
JP5639431B2 (ja) * 2010-09-30 2014-12-10 キヤノントッキ株式会社 成膜装置
CN103282543B (zh) * 2011-03-10 2014-12-24 夏普株式会社 蒸镀装置和蒸镀方法
US8728563B2 (en) * 2011-05-03 2014-05-20 Palmaz Scientific, Inc. Endoluminal implantable surfaces, stents, and grafts and method of making same
US20130168231A1 (en) * 2011-12-31 2013-07-04 Intermolecular Inc. Method For Sputter Deposition And RF Plasma Sputter Etch Combinatorial Processing
KR102100446B1 (ko) * 2012-12-10 2020-04-14 삼성디스플레이 주식회사 박막 증착용 마스크 조립체 및 이의 제조 방법
KR102103247B1 (ko) * 2012-12-21 2020-04-23 삼성디스플레이 주식회사 증착 장치
RU2588921C2 (ru) * 2014-09-25 2016-07-10 Общество С Ограниченной Ответственностью "Ласком" Способ формирования токоведущей шины на низкоэмиссионной поверхности стекла
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
JP2017533998A (ja) * 2014-11-17 2017-11-16 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 被覆処理及びウェブ被覆設備用の分離マスクを備えるマスキング装置
DE102015119327A1 (de) * 2015-11-10 2017-05-11 Von Ardenne Gmbh Verfahren, Beschichtungsanordnung und Beschichtungsmaterial-Transfer-Maske
WO2019177861A1 (en) * 2018-03-10 2019-09-19 Applied Materials, Inc. Method and apparatus for asymmetric selective physical vapor deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070024831A1 (en) 2005-07-27 2007-02-01 International Business Machines Corporation A method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices
WO2014002841A1 (ja) 2012-06-26 2014-01-03 シャープ株式会社 マスクフレーム
WO2015186796A1 (ja) 2014-06-05 2015-12-10 シャープ株式会社 蒸着方法及び蒸着装置

Also Published As

Publication number Publication date
KR102378672B1 (ko) 2022-03-24
KR20200008936A (ko) 2020-01-29
TW201900901A (zh) 2019-01-01
TWI737795B (zh) 2021-09-01
CN109642309A (zh) 2019-04-16
JP2019517623A (ja) 2019-06-24
CN109642309B (zh) 2021-08-17

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