KR102378672B1 - 고정밀 섀도 마스크 증착 시스템 및 그 방법 - Google Patents

고정밀 섀도 마스크 증착 시스템 및 그 방법 Download PDF

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KR102378672B1
KR102378672B1 KR1020187037180A KR20187037180A KR102378672B1 KR 102378672 B1 KR102378672 B1 KR 102378672B1 KR 1020187037180 A KR1020187037180 A KR 1020187037180A KR 20187037180 A KR20187037180 A KR 20187037180A KR 102378672 B1 KR102378672 B1 KR 102378672B1
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South Korea
Prior art keywords
substrate
shadow mask
delete delete
chuck
deposition
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Korean (ko)
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KR20200008936A (ko
Inventor
피 고쉬 암알쿠마르
바잔 프리드리히
아나단 무니사미
도노규 에반
아이 케이룰린 일야스
알리 타리크
타이스 케리
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이매진 코퍼레이션
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Priority claimed from US15/597,635 external-priority patent/US10072328B2/en
Priority claimed from US15/602,939 external-priority patent/US10386731B2/en
Application filed by 이매진 코퍼레이션 filed Critical 이매진 코퍼레이션
Priority claimed from PCT/IB2017/054481 external-priority patent/WO2017203502A2/en
Publication of KR20200008936A publication Critical patent/KR20200008936A/ko
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Publication of KR102378672B1 publication Critical patent/KR102378672B1/ko
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H01L51/0011—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)
KR1020187037180A 2017-05-17 2017-07-24 고정밀 섀도 마스크 증착 시스템 및 그 방법 Active KR102378672B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15/597,635 2017-05-17
US15/597,635 US10072328B2 (en) 2016-05-24 2017-05-17 High-precision shadow-mask-deposition system and method therefor
US15/602,939 US10386731B2 (en) 2016-05-24 2017-05-23 Shadow-mask-deposition system and method therefor
US15/602,939 2017-05-23
PCT/IB2017/054481 WO2017203502A2 (en) 2016-05-24 2017-07-24 High-precision shadow-mask-deposition system and method therefor

Publications (2)

Publication Number Publication Date
KR20200008936A KR20200008936A (ko) 2020-01-29
KR102378672B1 true KR102378672B1 (ko) 2022-03-24

Family

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Family Applications (1)

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KR1020187037180A Active KR102378672B1 (ko) 2017-05-17 2017-07-24 고정밀 섀도 마스크 증착 시스템 및 그 방법

Country Status (4)

Country Link
JP (1) JP7134095B2 (enExample)
KR (1) KR102378672B1 (enExample)
CN (1) CN109642309B (enExample)
TW (1) TWI737795B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111272089B (zh) * 2020-03-03 2022-06-28 中国科学院光电技术研究所 一种原位间隙检测装置与检测方法
US11851751B2 (en) 2021-07-23 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Deposition system and method
CN114524406B (zh) * 2021-12-23 2024-10-29 浙江大学 一种通过操纵衬底宏观移动轨迹实现纳米结构书写的方法
KR102787147B1 (ko) * 2023-05-23 2025-03-25 가천대학교 산학협력단 섀도우 마스크를 이용한 인-시튜 금속 메쉬 그리드를 형성하는 반도체 제조방법 및 그 방법에 의하여 형성되는 반도체 소자

Citations (5)

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JP2004119064A (ja) * 2002-09-24 2004-04-15 Fujitsu Ltd 薄膜形成装置および薄膜形成方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2005339858A (ja) * 2004-05-25 2005-12-08 Canon Inc マスク構造体及びその製造方法
JP2010270396A (ja) 2009-05-22 2010-12-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置
WO2015186796A1 (ja) 2014-06-05 2015-12-10 シャープ株式会社 蒸着方法及び蒸着装置

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US5300813A (en) * 1992-02-26 1994-04-05 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JPH1050584A (ja) * 1996-08-07 1998-02-20 Nikon Corp マスク保持装置
US6287436B1 (en) * 1998-02-27 2001-09-11 Innovent, Inc. Brazed honeycomb collimator
US6592728B1 (en) * 1998-08-04 2003-07-15 Veeco-Cvc, Inc. Dual collimated deposition apparatus and method of use
RU2155204C2 (ru) * 1998-09-23 2000-08-27 Институт проблем химической физики РАН Органический электролюминесцентный материал, излучающий в красной области спектра
AU2001266929A1 (en) * 2000-09-22 2002-04-02 General Electric Company Combinatorial coating systems and methods
US20050006223A1 (en) * 2003-05-07 2005-01-13 Robert Nichols Sputter deposition masking and methods
JP4609756B2 (ja) * 2005-02-23 2011-01-12 三井造船株式会社 成膜装置のマスク位置合わせ機構および成膜装置
US7239376B2 (en) * 2005-07-27 2007-07-03 International Business Machines Corporation Method and apparatus for correcting gravitational sag in photomasks used in the production of electronic devices
US7615161B2 (en) * 2005-08-19 2009-11-10 General Electric Company Simplified way to manufacture a low cost cast type collimator assembly
EP2168644B1 (en) * 2008-09-29 2014-11-05 Applied Materials, Inc. Evaporator for organic materials and method for evaporating organic materials
EP2425034B1 (en) * 2009-04-03 2016-07-13 OSRAM OLED GmbH An arrangement for holding a substrate in a material deposition apparatus
JP5639431B2 (ja) * 2010-09-30 2014-12-10 キヤノントッキ株式会社 成膜装置
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KR102103247B1 (ko) * 2012-12-21 2020-04-23 삼성디스플레이 주식회사 증착 장치
RU2588921C2 (ru) * 2014-09-25 2016-07-10 Общество С Ограниченной Ответственностью "Ласком" Способ формирования токоведущей шины на низкоэмиссионной поверхности стекла
US10115573B2 (en) * 2014-10-14 2018-10-30 Applied Materials, Inc. Apparatus for high compressive stress film deposition to improve kit life
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Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004119064A (ja) * 2002-09-24 2004-04-15 Fujitsu Ltd 薄膜形成装置および薄膜形成方法
JP2004183044A (ja) * 2002-12-03 2004-07-02 Seiko Epson Corp マスク蒸着方法及び装置、マスク及びマスクの製造方法、表示パネル製造装置、表示パネル並びに電子機器
JP2005339858A (ja) * 2004-05-25 2005-12-08 Canon Inc マスク構造体及びその製造方法
JP2010270396A (ja) 2009-05-22 2010-12-02 Samsung Mobile Display Co Ltd 薄膜蒸着装置
WO2015186796A1 (ja) 2014-06-05 2015-12-10 シャープ株式会社 蒸着方法及び蒸着装置

Also Published As

Publication number Publication date
JP2019517623A (ja) 2019-06-24
JP7134095B2 (ja) 2022-09-09
TW201900901A (zh) 2019-01-01
CN109642309A (zh) 2019-04-16
TWI737795B (zh) 2021-09-01
CN109642309B (zh) 2021-08-17
KR20200008936A (ko) 2020-01-29

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