CN109564967B - 使用电场将压电层从供体基板分离 - Google Patents

使用电场将压电层从供体基板分离 Download PDF

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Publication number
CN109564967B
CN109564967B CN201780048417.7A CN201780048417A CN109564967B CN 109564967 B CN109564967 B CN 109564967B CN 201780048417 A CN201780048417 A CN 201780048417A CN 109564967 B CN109564967 B CN 109564967B
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Prior art keywords
piezoelectric
substrate
donor substrate
chuck
electric field
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CN201780048417.7A
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English (en)
Chinese (zh)
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CN109564967A (zh
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C·查尔斯-艾尔弗雷德
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Soitec SA
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Soitec SA
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/53274—Means to disassemble electrical device

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Reciprocating Pumps (AREA)
  • Physical Vapour Deposition (AREA)
CN201780048417.7A 2016-08-02 2017-08-01 使用电场将压电层从供体基板分离 Active CN109564967B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1657494 2016-08-02
FR1657494A FR3054930B1 (fr) 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
PCT/EP2017/069470 WO2018024743A1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Publications (2)

Publication Number Publication Date
CN109564967A CN109564967A (zh) 2019-04-02
CN109564967B true CN109564967B (zh) 2022-12-02

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CN201780048417.7A Active CN109564967B (zh) 2016-08-02 2017-08-01 使用电场将压电层从供体基板分离

Country Status (8)

Country Link
US (2) US11744154B2 (enExample)
EP (2) EP3494604B1 (enExample)
JP (1) JP6773274B2 (enExample)
KR (1) KR102200791B1 (enExample)
CN (1) CN109564967B (enExample)
FR (1) FR3054930B1 (enExample)
SG (1) SG11201900762QA (enExample)
WO (1) WO2018024743A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
CN111834519B (zh) * 2020-06-29 2021-12-03 中国科学院上海微系统与信息技术研究所 一种提高单晶压电薄膜厚度均匀性的方法
FR3125383B1 (fr) * 2021-07-19 2025-02-21 Soitec Silicon On Insulator Procédé d'implantation d'espèces atomiques dans un substrat piézoélectrique

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737178A (en) * 1997-03-06 1998-04-07 Applied Materials, Inc. Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks
TW200518203A (en) * 2003-11-18 2005-06-01 United Sol Corp A method to fabricate a thin film on a substrate
CN1632911A (zh) * 2003-12-24 2005-06-29 联合晶圆公司 一种在基板上转移制作薄膜的方法
CN101620983A (zh) * 2008-06-20 2010-01-06 李天锡 薄膜制造方法
CN102569640A (zh) * 2007-12-25 2012-07-11 株式会社村田制作所 复合压电基板的制造方法
CN105493247A (zh) * 2013-08-29 2016-04-13 小利兰·斯坦福大学托管委员会 使用电磁力的材料分裂的受控裂缝传播的方法
KR20160069195A (ko) * 2014-12-08 2016-06-16 (주)다인스 진공 라미네이터 및 이를 이용한 라미네이팅 방법

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1999006110A1 (en) 1997-07-29 1999-02-11 Silicon Genesis Corporation Cluster tool method and apparatus using plasma immersion ion implantation
JP2001035907A (ja) 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
WO2007013571A1 (en) * 2005-07-29 2007-02-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
FR2914492A1 (fr) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Procede de fabrication de structures avec couches ferroelectriques reportees.
JP4821834B2 (ja) * 2008-10-31 2011-11-24 株式会社村田製作所 圧電性複合基板の製造方法
JP5359615B2 (ja) * 2009-07-02 2013-12-04 株式会社村田製作所 複合基板の製造方法
FR2995136B1 (fr) 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
TWI635632B (zh) * 2013-02-19 2018-09-11 日本碍子股份有限公司 複合基板、彈性波裝置及彈性波裝置的製法
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737178A (en) * 1997-03-06 1998-04-07 Applied Materials, Inc. Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks
TW200518203A (en) * 2003-11-18 2005-06-01 United Sol Corp A method to fabricate a thin film on a substrate
CN1632911A (zh) * 2003-12-24 2005-06-29 联合晶圆公司 一种在基板上转移制作薄膜的方法
CN102569640A (zh) * 2007-12-25 2012-07-11 株式会社村田制作所 复合压电基板的制造方法
CN101620983A (zh) * 2008-06-20 2010-01-06 李天锡 薄膜制造方法
CN105493247A (zh) * 2013-08-29 2016-04-13 小利兰·斯坦福大学托管委员会 使用电磁力的材料分裂的受控裂缝传播的方法
KR20160069195A (ko) * 2014-12-08 2016-06-16 (주)다인스 진공 라미네이터 및 이를 이용한 라미네이팅 방법

Also Published As

Publication number Publication date
FR3054930B1 (fr) 2018-07-13
KR20190030747A (ko) 2019-03-22
FR3054930A1 (enExample) 2018-02-09
EP3731288A1 (en) 2020-10-28
CN109564967A (zh) 2019-04-02
EP3494604A1 (en) 2019-06-12
US20210376225A1 (en) 2021-12-02
WO2018024743A1 (en) 2018-02-08
US20230363279A1 (en) 2023-11-09
EP3731288B1 (en) 2022-10-05
EP3494604B1 (en) 2020-06-17
KR102200791B1 (ko) 2021-01-12
US11744154B2 (en) 2023-08-29
JP2019527937A (ja) 2019-10-03
JP6773274B2 (ja) 2020-10-21
SG11201900762QA (en) 2019-02-27

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