SG11201900762QA - Use of an electric field for detaching a piezoelectric layer from a donor substrate - Google Patents
Use of an electric field for detaching a piezoelectric layer from a donor substrateInfo
- Publication number
- SG11201900762QA SG11201900762QA SG11201900762QA SG11201900762QA SG11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA
- Authority
- SG
- Singapore
- Prior art keywords
- international
- donor substrate
- piezoelectric layer
- electric field
- detaching
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 230000005684 electric field Effects 0.000 title abstract 4
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
- H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/53274—Means to disassemble electrical device
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Reciprocating Pumps (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR1657494A FR3054930B1 (fr) | 2016-08-02 | 2016-08-02 | Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur |
| PCT/EP2017/069470 WO2018024743A1 (en) | 2016-08-02 | 2017-08-01 | Use of an electric field for detaching a piezoelectric layer from a donor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201900762QA true SG11201900762QA (en) | 2019-02-27 |
Family
ID=57960500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201900762QA SG11201900762QA (en) | 2016-08-02 | 2017-08-01 | Use of an electric field for detaching a piezoelectric layer from a donor substrate |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US11744154B2 (enExample) |
| EP (2) | EP3494604B1 (enExample) |
| JP (1) | JP6773274B2 (enExample) |
| KR (1) | KR102200791B1 (enExample) |
| CN (1) | CN109564967B (enExample) |
| FR (1) | FR3054930B1 (enExample) |
| SG (1) | SG11201900762QA (enExample) |
| WO (1) | WO2018024743A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR3054930B1 (fr) | 2016-08-02 | 2018-07-13 | Soitec | Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur |
| CN111834519B (zh) * | 2020-06-29 | 2021-12-03 | 中国科学院上海微系统与信息技术研究所 | 一种提高单晶压电薄膜厚度均匀性的方法 |
| FR3125383B1 (fr) * | 2021-07-19 | 2025-02-21 | Soitec Silicon On Insulator | Procédé d'implantation d'espèces atomiques dans un substrat piézoélectrique |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5737178A (en) * | 1997-03-06 | 1998-04-07 | Applied Materials, Inc. | Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks |
| WO1999006110A1 (en) | 1997-07-29 | 1999-02-11 | Silicon Genesis Corporation | Cluster tool method and apparatus using plasma immersion ion implantation |
| JP2001035907A (ja) | 1999-07-26 | 2001-02-09 | Ulvac Japan Ltd | 吸着装置 |
| TWI290342B (en) | 2003-11-18 | 2007-11-21 | United Soi Corp | A method to fabricate a thin film on a substrate |
| CN100342486C (zh) | 2003-12-24 | 2007-10-10 | 联合晶圆公司 | 一种在基板上转移制作薄膜的方法 |
| WO2007013571A1 (en) * | 2005-07-29 | 2007-02-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
| FR2914492A1 (fr) * | 2007-03-27 | 2008-10-03 | Soitec Silicon On Insulator | Procede de fabrication de structures avec couches ferroelectriques reportees. |
| EP2226934B1 (en) * | 2007-12-25 | 2016-11-30 | Murata Manufacturing Co. Ltd. | Composite piezoelectric substrate manufacturing method |
| CN101620983B (zh) | 2008-06-20 | 2011-05-25 | 李天锡 | 薄膜制造方法 |
| JP4821834B2 (ja) * | 2008-10-31 | 2011-11-24 | 株式会社村田製作所 | 圧電性複合基板の製造方法 |
| JP5359615B2 (ja) * | 2009-07-02 | 2013-12-04 | 株式会社村田製作所 | 複合基板の製造方法 |
| FR2995136B1 (fr) | 2012-09-04 | 2015-06-26 | Soitec Silicon On Insulator | Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin |
| TWI635632B (zh) * | 2013-02-19 | 2018-09-11 | 日本碍子股份有限公司 | 複合基板、彈性波裝置及彈性波裝置的製法 |
| KR20160047496A (ko) | 2013-08-29 | 2016-05-02 | 더 보드 오브 트러스티스 오브 더 리랜드 스탠포드 주니어 유니버시티 | 전자기력을 이용한 재료 절개를 위해 균열 전파를 제어하는 방법 |
| KR101664090B1 (ko) * | 2014-12-08 | 2016-10-10 | (주)다인스 | 진공 라미네이터 및 이를 이용한 라미네이팅 방법 |
| FR3054930B1 (fr) | 2016-08-02 | 2018-07-13 | Soitec | Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur |
-
2016
- 2016-08-02 FR FR1657494A patent/FR3054930B1/fr active Active
-
2017
- 2017-08-01 KR KR1020197005237A patent/KR102200791B1/ko active Active
- 2017-08-01 EP EP17754637.1A patent/EP3494604B1/en active Active
- 2017-08-01 EP EP20180045.5A patent/EP3731288B1/en active Active
- 2017-08-01 CN CN201780048417.7A patent/CN109564967B/zh active Active
- 2017-08-01 WO PCT/EP2017/069470 patent/WO2018024743A1/en not_active Ceased
- 2017-08-01 US US16/322,777 patent/US11744154B2/en active Active
- 2017-08-01 SG SG11201900762QA patent/SG11201900762QA/en unknown
- 2017-08-01 JP JP2019504705A patent/JP6773274B2/ja active Active
-
2023
- 2023-07-18 US US18/353,980 patent/US20230363279A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR3054930B1 (fr) | 2018-07-13 |
| KR20190030747A (ko) | 2019-03-22 |
| FR3054930A1 (enExample) | 2018-02-09 |
| EP3731288A1 (en) | 2020-10-28 |
| CN109564967A (zh) | 2019-04-02 |
| EP3494604A1 (en) | 2019-06-12 |
| US20210376225A1 (en) | 2021-12-02 |
| WO2018024743A1 (en) | 2018-02-08 |
| US20230363279A1 (en) | 2023-11-09 |
| EP3731288B1 (en) | 2022-10-05 |
| EP3494604B1 (en) | 2020-06-17 |
| KR102200791B1 (ko) | 2021-01-12 |
| US11744154B2 (en) | 2023-08-29 |
| JP2019527937A (ja) | 2019-10-03 |
| CN109564967B (zh) | 2022-12-02 |
| JP6773274B2 (ja) | 2020-10-21 |
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