SG11201900762QA - Use of an electric field for detaching a piezoelectric layer from a donor substrate - Google Patents

Use of an electric field for detaching a piezoelectric layer from a donor substrate

Info

Publication number
SG11201900762QA
SG11201900762QA SG11201900762QA SG11201900762QA SG11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA SG 11201900762Q A SG11201900762Q A SG 11201900762QA
Authority
SG
Singapore
Prior art keywords
international
donor substrate
piezoelectric layer
electric field
detaching
Prior art date
Application number
SG11201900762QA
Inventor
Cédric Charles-Alfred
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of SG11201900762QA publication Critical patent/SG11201900762QA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/1051—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead based oxides
    • H10N30/8554—Lead zirconium titanate based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making

Abstract

ornma'AteVAV:ri 1 .1EMEIM + -+-+-+-+-+- 31 11 FIG. 2 33 it (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (43) International Publication Date 08 February 2018 (08.02.2018) W I PO I PCT ~~ll~~~~~~~~ 011101010VIIIOH olo olio! olo Ho mo mil °nom ow (10) International Publication Number WO 2018/024743 Al (51) International Patent Classification: HO1L 41/312 (2013.01) (21) International Application Number: PCT/EP2017/069470 (22) International Filing Date: 01 August 2017 (01.08.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 1657494 02 August 2016 (02.08.2016) FR (71) Applicant: SOITEC [FR/FR]; Parc Technologique des Fontaines, Chemin Des Franques, 38190 Bernin (FR). (72) Inventor: CHARLES-ALFRED, Cedric; 1 Place Notre- Dame, 38000 Grenoble (FR). (74) Agent: GRUNECKER PATENT- UND RECHTSAN- WALTE PARTG MBB; Leopoldstrasse 4, 80802 Miinchen (DE). = (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JO, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: with international search report (Art. 21(3)) before the expiration of the time limit for amending the claims and to be republished in the event of receipt of amendments (Rule 48.2(h)) (54) Title: USE OF AN ELECTRIC FIELD FOR DETACHING A PIEZOELECTRIC LAYER FROM A DONOR SUBSTRATE N O cc O O 37 37 37 37 37 37 35 35 35 (57) : The invention relates to a method for transferring a piezoelectric layer onto a support substrate. It also relates to a detaching chamber for carrying out at least a part of the method. The inventive method to detach the piezoelectric layer from a donor substrate onto the support substrate comprises the steps of: a) providing a predetermined splitting area in a piezoelectric donor substrate, b) attaching the piezoelectric donor substrate to a support substrate to form a compound, and c) detaching the piezoelectric layer from the piezoelectric donor substrate comprising applying an electric field. By using the electric field, the detachment step can be carried out at lower temperature compared to the prior art.
SG11201900762QA 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate SG11201900762QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1657494A FR3054930B1 (en) 2016-08-02 2016-08-02 USE OF AN ELECTRIC FIELD FOR DETACHING A PIEZOELECTRIC LAYER FROM A DONOR SUBSTRATE
PCT/EP2017/069470 WO2018024743A1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Publications (1)

Publication Number Publication Date
SG11201900762QA true SG11201900762QA (en) 2019-02-27

Family

ID=57960500

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201900762QA SG11201900762QA (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Country Status (8)

Country Link
US (2) US11744154B2 (en)
EP (2) EP3494604B1 (en)
JP (1) JP6773274B2 (en)
KR (1) KR102200791B1 (en)
CN (1) CN109564967B (en)
FR (1) FR3054930B1 (en)
SG (1) SG11201900762QA (en)
WO (1) WO2018024743A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3054930B1 (en) 2016-08-02 2018-07-13 Soitec USE OF AN ELECTRIC FIELD FOR DETACHING A PIEZOELECTRIC LAYER FROM A DONOR SUBSTRATE
CN111834519B (en) * 2020-06-29 2021-12-03 中国科学院上海微系统与信息技术研究所 Method for improving thickness uniformity of single crystal piezoelectric film
FR3125383A1 (en) * 2021-07-19 2023-01-20 Soitec Method for implanting atomic species in a piezoelectric substrate

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737178A (en) 1997-03-06 1998-04-07 Applied Materials, Inc. Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks
US6207005B1 (en) 1997-07-29 2001-03-27 Silicon Genesis Corporation Cluster tool apparatus using plasma immersion ion implantation
JP2001035907A (en) 1999-07-26 2001-02-09 Ulvac Japan Ltd Chuck device
TWI290342B (en) * 2003-11-18 2007-11-21 United Soi Corp A method to fabricate a thin film on a substrate
CN100342486C (en) * 2003-12-24 2007-10-10 联合晶圆公司 Method for making thin film by transferring on base plate
CN101233531B (en) * 2005-07-29 2012-05-30 株式会社半导体能源研究所 Manufacturing method of semiconductor device
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
FR2914492A1 (en) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Substrate's thin ferroelectric layer manufacturing method for manufacturing e.g. piezoelectric sensor, involves subjecting resulting structure having transferred thin layer to electrical field to improve ferroelectric properties of layer
KR101148587B1 (en) 2007-12-25 2012-05-23 가부시키가이샤 무라타 세이사쿠쇼 Composite piezoelectric substrate manufacturing method
CN101620983B (en) * 2008-06-20 2011-05-25 李天锡 Thin film production method
JP4821834B2 (en) * 2008-10-31 2011-11-24 株式会社村田製作所 Method for manufacturing piezoelectric composite substrate
JP5359615B2 (en) * 2009-07-02 2013-12-04 株式会社村田製作所 Manufacturing method of composite substrate
FR2995136B1 (en) 2012-09-04 2015-06-26 Soitec Silicon On Insulator PSEUDO-SUBSTRATE WITH IMPROVED EFFICIENCY OF USE OF MONOCRYSTALLINE MATERIAL
TWI635632B (en) * 2013-02-19 2018-09-11 日本碍子股份有限公司 Composite substrate, elastic wave device, and method for manufacturing elastic wave device
US9659764B2 (en) * 2013-08-29 2017-05-23 The Board Of Trustees Of The Leland Stanford Junior University Method of controlled crack propagation for material cleavage using electromagnetic forces
KR101664090B1 (en) * 2014-12-08 2016-10-10 (주)다인스 Vacuum laminator and method for laminating using the same
FR3054930B1 (en) 2016-08-02 2018-07-13 Soitec USE OF AN ELECTRIC FIELD FOR DETACHING A PIEZOELECTRIC LAYER FROM A DONOR SUBSTRATE

Also Published As

Publication number Publication date
FR3054930A1 (en) 2018-02-09
CN109564967A (en) 2019-04-02
EP3494604B1 (en) 2020-06-17
US20230363279A1 (en) 2023-11-09
FR3054930B1 (en) 2018-07-13
WO2018024743A1 (en) 2018-02-08
EP3494604A1 (en) 2019-06-12
KR20190030747A (en) 2019-03-22
JP6773274B2 (en) 2020-10-21
EP3731288A1 (en) 2020-10-28
US11744154B2 (en) 2023-08-29
JP2019527937A (en) 2019-10-03
KR102200791B1 (en) 2021-01-12
CN109564967B (en) 2022-12-02
EP3731288B1 (en) 2022-10-05
US20210376225A1 (en) 2021-12-02

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