FR3054930A1 - - Google Patents

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Publication number
FR3054930A1
FR3054930A1 FR1657494A FR1657494A FR3054930A1 FR 3054930 A1 FR3054930 A1 FR 3054930A1 FR 1657494 A FR1657494 A FR 1657494A FR 1657494 A FR1657494 A FR 1657494A FR 3054930 A1 FR3054930 A1 FR 3054930A1
Authority
FR
France
Prior art keywords
piezoelectric
substrate
donor substrate
mandrel
electric field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1657494A
Other languages
English (en)
French (fr)
Other versions
FR3054930B1 (fr
Inventor
Cedric Charles-Alfred
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1657494A priority Critical patent/FR3054930B1/fr
Application filed by Soitec SA filed Critical Soitec SA
Priority to CN201780048417.7A priority patent/CN109564967B/zh
Priority to EP17754637.1A priority patent/EP3494604B1/en
Priority to EP20180045.5A priority patent/EP3731288B1/en
Priority to JP2019504705A priority patent/JP6773274B2/ja
Priority to KR1020197005237A priority patent/KR102200791B1/ko
Priority to SG11201900762QA priority patent/SG11201900762QA/en
Priority to US16/322,777 priority patent/US11744154B2/en
Priority to PCT/EP2017/069470 priority patent/WO2018024743A1/en
Publication of FR3054930A1 publication Critical patent/FR3054930A1/fr
Application granted granted Critical
Publication of FR3054930B1 publication Critical patent/FR3054930B1/fr
Priority to US18/353,980 priority patent/US20230363279A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8536—Alkaline earth metal based oxides, e.g. barium titanates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8548—Lead-based oxides
    • H10N30/8554—Lead-zirconium titanate [PZT] based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/04—Treatments to modify a piezoelectric or electrostrictive property, e.g. polarisation characteristics, vibration characteristics or mode tuning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/085—Shaping or machining of piezoelectric or electrostrictive bodies by machining
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • H10N30/8542—Alkali metal based oxides, e.g. lithium, sodium or potassium niobates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/42—Piezoelectric device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/53274—Means to disassemble electrical device

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Reciprocating Pumps (AREA)
  • Physical Vapour Deposition (AREA)
FR1657494A 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur Active FR3054930B1 (fr)

Priority Applications (10)

Application Number Priority Date Filing Date Title
FR1657494A FR3054930B1 (fr) 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
PCT/EP2017/069470 WO2018024743A1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate
EP20180045.5A EP3731288B1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate
JP2019504705A JP6773274B2 (ja) 2016-08-02 2017-08-01 ドナー基板から圧電層を剥離するための電界の使用
KR1020197005237A KR102200791B1 (ko) 2016-08-02 2017-08-01 도너 기판에서 압전 층을 박리하기 위한 전기장의 사용
SG11201900762QA SG11201900762QA (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate
CN201780048417.7A CN109564967B (zh) 2016-08-02 2017-08-01 使用电场将压电层从供体基板分离
EP17754637.1A EP3494604B1 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate
US16/322,777 US11744154B2 (en) 2016-08-02 2017-08-01 Use of an electric field for detaching a piezoelectric layer from a donor substrate
US18/353,980 US20230363279A1 (en) 2016-08-02 2023-07-18 Use of an electric field for detaching a piezoelectric layer from a donor substrate

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1657494A FR3054930B1 (fr) 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
FR1657494 2016-08-02

Publications (2)

Publication Number Publication Date
FR3054930A1 true FR3054930A1 (enExample) 2018-02-09
FR3054930B1 FR3054930B1 (fr) 2018-07-13

Family

ID=57960500

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1657494A Active FR3054930B1 (fr) 2016-08-02 2016-08-02 Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur

Country Status (8)

Country Link
US (2) US11744154B2 (enExample)
EP (2) EP3494604B1 (enExample)
JP (1) JP6773274B2 (enExample)
KR (1) KR102200791B1 (enExample)
CN (1) CN109564967B (enExample)
FR (1) FR3054930B1 (enExample)
SG (1) SG11201900762QA (enExample)
WO (1) WO2018024743A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur
CN111834519B (zh) * 2020-06-29 2021-12-03 中国科学院上海微系统与信息技术研究所 一种提高单晶压电薄膜厚度均匀性的方法
FR3125383B1 (fr) * 2021-07-19 2025-02-21 Soitec Silicon On Insulator Procédé d'implantation d'espèces atomiques dans un substrat piézoélectrique

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2914492A1 (fr) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Procede de fabrication de structures avec couches ferroelectriques reportees.
US20100088868A1 (en) * 2007-12-25 2010-04-15 Murata Manufacturing Co., Ltd. Method for manufacturing composite piezoelectric substrate
US20100108248A1 (en) * 2008-10-31 2010-05-06 Murata Manufacturing Co., Ltd. Method for producing piezoelectric composite substrate

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5737178A (en) 1997-03-06 1998-04-07 Applied Materials, Inc. Monocrystalline ceramic coating having integral bonding interconnects for electrostatic chucks
US6153524A (en) 1997-07-29 2000-11-28 Silicon Genesis Corporation Cluster tool method using plasma immersion ion implantation
JP2001035907A (ja) 1999-07-26 2001-02-09 Ulvac Japan Ltd 吸着装置
TWI290342B (en) * 2003-11-18 2007-11-21 United Soi Corp A method to fabricate a thin film on a substrate
CN100342486C (zh) 2003-12-24 2007-10-10 联合晶圆公司 一种在基板上转移制作薄膜的方法
US7863154B2 (en) * 2005-07-29 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7863157B2 (en) 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
CN101620983B (zh) * 2008-06-20 2011-05-25 李天锡 薄膜制造方法
JP5359615B2 (ja) * 2009-07-02 2013-12-04 株式会社村田製作所 複合基板の製造方法
FR2995136B1 (fr) 2012-09-04 2015-06-26 Soitec Silicon On Insulator Pseudo-substrat avec efficacite amelioree d'utilisation d'un materiau monocristallin
DE112014000888B4 (de) * 2013-02-19 2025-06-26 Ngk Insulators, Ltd. Verfahren zur Herstellung einer Elastische-Wellen-Vorrichtung
WO2015031444A1 (en) * 2013-08-29 2015-03-05 The Board Of Trustees Of The Leland Stanford Junior University Method of controlled crack propagation for material cleavage using electromagnetic forces
KR101664090B1 (ko) * 2014-12-08 2016-10-10 (주)다인스 진공 라미네이터 및 이를 이용한 라미네이팅 방법
FR3054930B1 (fr) 2016-08-02 2018-07-13 Soitec Utilisation d'un champ electrique pour detacher une couche piezo-electrique a partir d'un substrat donneur

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2914492A1 (fr) * 2007-03-27 2008-10-03 Soitec Silicon On Insulator Procede de fabrication de structures avec couches ferroelectriques reportees.
US20100088868A1 (en) * 2007-12-25 2010-04-15 Murata Manufacturing Co., Ltd. Method for manufacturing composite piezoelectric substrate
US20100108248A1 (en) * 2008-10-31 2010-05-06 Murata Manufacturing Co., Ltd. Method for producing piezoelectric composite substrate

Also Published As

Publication number Publication date
JP6773274B2 (ja) 2020-10-21
KR102200791B1 (ko) 2021-01-12
SG11201900762QA (en) 2019-02-27
FR3054930B1 (fr) 2018-07-13
JP2019527937A (ja) 2019-10-03
CN109564967A (zh) 2019-04-02
EP3494604B1 (en) 2020-06-17
US11744154B2 (en) 2023-08-29
WO2018024743A1 (en) 2018-02-08
EP3494604A1 (en) 2019-06-12
KR20190030747A (ko) 2019-03-22
US20210376225A1 (en) 2021-12-02
US20230363279A1 (en) 2023-11-09
EP3731288A1 (en) 2020-10-28
CN109564967B (zh) 2022-12-02
EP3731288B1 (en) 2022-10-05

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