CN109545888A - 一种提高多晶硅太阳能电池光电转换效率的方法 - Google Patents
一种提高多晶硅太阳能电池光电转换效率的方法 Download PDFInfo
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Abstract
本发明公开了一种提高多晶硅太阳能电池光电转换效率的方法，包括以下步骤，在具有PN结的多晶硅基片上进行刻蚀，得到周期性结构的刻蚀坑，刻蚀坑穿过PN结，形成周期性结构的孔洞；在孔洞中填充相变储能材料；将填充相变储能材料的多晶硅基片与透明导电玻璃组装成太阳能电池。多晶硅基片(6)使用HF水溶液或等离子体刻蚀，孔洞深度10～100μm，孔径5～20μm，相变储能材料(3)为相变温度25～40℃石蜡、月桂酸–葵酸二元复合材料或分子量2000以上多元醇中的一种。本发明优点：制备工艺简便、经济合理、电池温度恒定、提高电池的光电转换效率。
Description
技术领域
本发明涉及新能源技术领域，特别是涉及一种提高多晶硅太阳能电池光电转换效率的方法。
背景技术
商业化太阳能电池主要是单晶硅和多晶硅太阳能电池，单晶硅太阳能电池光电转换效率最高，为28％左右；多晶硅太阳能电池的光电转换效率为20％左右。在晶体硅太阳能电池中，单晶硅型太阳能电池市场占有率约为43％，多晶硅太阳能电池市场占有率为54％，且呈现持续增长趋势。
白天太阳光光照强度发生变化时，太阳能电池光电转换效率随之变化。光照强度越高，太阳光在多晶硅中产生的载流子浓度越大，光电流相应增大。除了光照强度，温度对多晶硅太阳能电池的光电转换效率影响比较大，温度上升1 ℃，光电转换效率降低0.45％(C.J.Ho,et al.Thermal and electrical performances of a water-surface floatingPV integrated with double water-saturated MEPCM layers, Applied ThermalEngineering,2016,94:122-132.)，因此，保持温度恒定对于多晶硅太阳能电池性能至关重要。
相变储能材料包括无机类、有机类和混合类，其用途十分广泛。相变储能材料可以与光催化结合起来，采用原位沉淀法合成以正二十烷核和氧化锌壳层为基础的多功能微胶囊，微胶囊具有清晰地核壳结构，微胶囊相变性能由合成物中正二十烷与Zn(CH3COO)22H2O的质量比决定，不仅具有优良的相变储能特性，而且具备较高光催化活性，可应用于环保和医疗方面(F.N.Li,et al. Fabrication of multifunctional microcapsulescontaining n-eicosane core and zinc oxide shell for low-temperature energystorage,photocatalysis and antibiosis,Energy Conversion and Management,2016,106:873-885)。
相变储能材料还可以与超级电容器结合起来，纳米片状MnO2|SiO2相变微胶囊可用于超级电容器的热管理。采用模板定向自组装方法，在SiO2表面制备介孔纳米片状MnO2层，所得到的微胶囊具有较高相变焓、较好的包覆效果以及有效的热调节能力，这些微胶囊在工作温度高于45℃时比传统的MnO2|SiO2固体颗粒具有更高的比容量。由于MnO2层的介电特性，在45℃下获得312.3F/g 的高比容量，电流密度为1.0A/m2，而且在1000次充放电循环后，具有长期循环稳定性(Q.Xu,et al.Smart design and construction of nanoflake-like MnO2/SiO2 hierarchical microcapsules containing phase change material forin-situ thermal management of supercapacitors,Energy Conversion andManagement,2018,164: 311-328)。
目前的多晶硅太阳能电池存在以下两个方面不足之处：一是随着日间光照强度变化，太阳能电池温度随之变化，影响光电转换效率；二是太阳光入射多晶硅基片时，光强度随透射深度增大持续衰减，导致PN结附近的电子–空穴对密度远低于基片表面，从而限制了多晶硅太阳能电池的光电流和光电转换效率。
发明内容
为了解决上述技术问题，本发明提供了一种提高多晶硅太阳能电池光电转换效率的方法，通过填充的相变储能材料吸收/释放热量，确保多晶硅太阳能电池工作时温度恒定，使其光电转换效率不受周围环境的负面影响，从而提升电池的光电转换性能。
请参阅图1，本发明采用如下技术方案：一种提高多晶硅太阳能电池光电转换效率的方法，多晶硅太阳能电池结构包括上下两层透明导电玻璃以及填充相变储能材料的多晶硅基片，基片N区、基片P区与透明导电玻璃联结，上下两层透明导电玻璃之间通过导线连接一个外部负载，其方法包括以下步骤：
1)在具有PN结的多晶硅基片上进行刻蚀，得到周期性结构的刻蚀坑，刻蚀坑穿过PN结，形成周期性结构的孔洞；
2)在孔洞中填充相变储能材料；
3)将填充相变储能材料的多晶硅基片与透明导电玻璃组装成太阳能电池。
优选地，所述多晶硅基片使用HF水溶液或等离子体刻蚀，孔洞深度10～100 μm，孔径5～20μm。
优选地，所述相变储能材料为相变温度25～40℃石蜡、月桂酸–葵酸二元复合材料或分子量2000以上多元醇中的一种。
优选地，所述相变储能材料的填充方法是真空浸渗。
本发明具有的优点：(1)本发明将相变储能材料填充在孔洞中，周期性孔洞增加太阳光到达PN结的光强度，提高电子–空穴对密度，获得较大的光电流。 (2)选用液态相变储能材料，相变温度在30℃左右，把相变储能材料填充在周期性结构孔洞中，环境温度升高时，相变储能材料吸收热量，维持电池温度恒定；环境温度降低时，通过释放热量，保持电池温度恒定，从而提高电池的光电转换效率。综上所述，本发明制备工艺简便、经济合理，适合规模化工业生产，对于提升多晶硅太阳能电池光电转换效率具有重要的现实意义。
附图说明
图1是本发明一种提高多晶硅太阳能电池光电转换效率的方法中填充相变储能材料的多晶硅电池结构示意图。
附图标记说明:1、基片N区2、基片P区3、相变储能材料4、透明导电玻璃5、PN结6、多晶硅基片7、外部负载。
具体实施方式
下面结合附图对本发明的优选实施例进行详细阐述，以使本发明的优点和特征能更易于被本领域技术人员理解，从而对本发明的保护范围做出更为清楚明确的界定。
实施例1
将贴上掩模保护膜的多晶硅基片(6)浸泡在HF溶液中刻蚀，使没有被抗蚀剂掩蔽的那一部分多晶硅基片(6)表面与HF溶液发生化学反应而被除去。刻蚀深度在50μm左右，宽度在15μm左右。多晶硅太阳能电池结构包括上下两层透明导电玻璃(4)以及填充相变储能材料(3)的多晶硅基片(6)，两者组合封装成多晶硅太阳能电池。通过太阳光模拟器测试结果表明，电池光电转换效率提高了3％。
实施例2
将贴上掩模保护膜的多晶硅基片放在等离子体中刻蚀，利用气压为10～ 1000帕的特定气体(或混合气体)的辉光放电，产生能与多晶硅基片(6)发生离子化学反应的分子或分子基团，生成的反应产物是挥发性的。它在低气压的真空室中被抽走，从而实现刻蚀，刻蚀深度在80μm左右，宽度在10μm左右。多晶硅太阳能电池结构包括上下两层透明导电玻璃(4)以及填充相变储能材料 (3)的多晶硅基片(6)，两者组合封装成多晶硅太阳能电池。通过太阳光模拟器测试结果表明，发现光电转换效率提高了4％。
实施例3
相变储能材料(3)用月桂酸|葵酸二元复合材料填充孔洞，将贴上掩模保护膜的多晶硅基片(6)浸泡HF溶液中，使没有被抗蚀剂掩蔽的那一部分多晶硅基片(6)表面与HF溶液发生化学反应而被除去，刻蚀深度在50μm左右，宽度在15μm左右。多晶硅太阳能电池结构包括上下两层透明导电玻璃(4)以及填充相变储能材料(3)的多晶硅基片(6)，两者组合封装成多晶硅太阳能电池。通过太阳光模拟器测试结果表明，发现光电转换效率提高了2.5％。
不局限于此，任何不经过创造性劳动想到的变化或替换，都应涵盖在本实用新型的保护范围之内。因此，本发明的保护范围应该以权利要求书所限定的保护范围为准。
Claims (4)
1.一种提高多晶硅太阳能电池光电转换效率的方法，其特征在于，多晶硅太阳能电池结构包括上下两层透明导电玻璃(4)以及填充相变储能材料(3)的多晶硅基片(6)，基片N区(1)、基片P区(2)与透明导电玻璃(4)联结，上下两层透明导电玻璃(4)之间通过导线连接一个外部负载(7)，其方法包括以下步骤：
1)在具有PN结(5)的多晶硅基片(6)上进行刻蚀，得到周期性结构的刻蚀坑，刻蚀坑穿过PN结(5)，形成周期性结构的孔洞；
2)在孔洞中填充相变储能材料(3)；
3)将填充相变储能材料(3)的多晶硅基片(6)与透明导电玻璃(4)组装成太阳能电池。
2.根据权利要求1所述的提高多晶硅太阳能电池光电转换效率的方法，其特征在于，所述多晶硅基片(6)使用HF水溶液或等离子体刻蚀，孔洞深度10～100μm，孔径5～20μm。
3.根据权利要求1所述的提高多晶硅太阳能电池光电转换效率的方法，其特征在于，所述相变储能材料(3)为相变温度25～40℃石蜡、月桂酸–葵酸二元复合材料或分子量2000以上多元醇中的一种。
4.根据权利要求1所述的提高多晶硅太阳能电池光电转换效率的方法，其特征在于，所述相变储能材料(3)的填充方法是真空浸渗。
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