CN109518245A - The wafer copper-plating technique slot of coating edge effect can be weakened - Google Patents
The wafer copper-plating technique slot of coating edge effect can be weakened Download PDFInfo
- Publication number
- CN109518245A CN109518245A CN201811614235.4A CN201811614235A CN109518245A CN 109518245 A CN109518245 A CN 109518245A CN 201811614235 A CN201811614235 A CN 201811614235A CN 109518245 A CN109518245 A CN 109518245A
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- Prior art keywords
- wafer
- anode
- coating
- indigo plant
- copper
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses the wafer copper-plating technique slots that one kind can weaken coating edge effect, solve the problems, such as that marginal position thickness of coating sharply increases wafer in the plating process.Cathode rod (3) and anode rod (6) are respectively arranged in coating bath (1), it is furnished with titanium indigo plant anode (7) on anode rod (6), wafer jig (4) are housed on cathode rod (3), wafer (5) is arranged on wafer jig (4), wafer (5) and titanium indigo plant anode (7) are arranged in copper plating bath (2), vertical shear screen (8) are provided between wafer (5) and titanium indigo plant anode (7), the line between central point on central point on wafer (5) and titanium indigo plant anode (7) is arranged in a mutually vertical manner with plane where vertical shear screen (8), vertical shear screen (8) is barrier shape, L shape shear plate (10) has been equally spaced between two parallel posts (9) of vertical shear screen (8).Reduce the defect that crystal round fringes thickness of coating sharply increases, improves the uniformity of coating.
Description
Technical field
The present invention relates to a kind of wafer copper-plating technique slot, in particular to a kind of wafer copper facing that can reduce coating edge effect
Technology groove.
Background technique
Wafer electroplating device is mainly used in wafer copper post in integrated circuit Advanced Packaging, salient point, figure, TSV copper filling
The application of equal plating.Currently, just becoming the new technology that industry is concerned with the Advanced Packaging that 3D is encapsulated as representing, especially
It is to be electroplated wherein using particularly important.Wafer copper-plating technique slot in wafer electroplating device is used for 8 cun and following plated wafer
Process for copper realizes that copper post, figure etc. make on planar graph, and thickness of coating reaches 100 microns, and the uniformity of thickness of coating is wanted
≤±10%；But in the plating process, the radial distribution of power line, it is uneven to will lead to cathode current distribution, causes wafer side
Edge position thickness of coating sharply increases, and forms " edge effect " common in electroplating technology, how to improve the distribution of power line,
The polarizability for improving solution, keeps coating more uniform, is live problem in urgent need to solve.
Summary of the invention
The present invention provides the wafer copper-plating technique slots that one kind can weaken coating edge effect, solve wafer and are being electroplated
The technical issues of marginal position thickness of coating sharply increases in journey.
The present invention is to solve the above technical problem by the following technical programs:
A kind of wafer copper-plating technique slot reducing coating edge effect, including coating bath, copper plating bath is provided in coating bath, is being plated
It is respectively arranged with cathode rod and anode rod in slot, is furnished with titanium indigo plant anode on anode rod, wafer jig is housed on cathode rod, it is brilliant
Circle is arranged on wafer jig, and wafer and titanium indigo plant anode are arranged in copper plating bath, are provided between wafer and titanium indigo plant anode
Vertical shear screen, the line between the central point on central point and titanium indigo plant anode on wafer are with plane where vertical shear screen
It is arranged in a mutually vertical manner, vertical shear screen is barrier shape, is equally spaced between two parallel posts of vertical shear screen
There is L shape shear plate.
The ratio of the length of L shape shear plate and brilliant diameter of a circle is 1.5:1, and the spacing of two adjacent L shape shear plates is 30 millis
Rice, the height of L shape shear plate are 8 millimeters, and L shape shear plate is 20 millimeters at a distance from wafer, L shape shear plate and titanium indigo plant anode
Distance is 150 millimeters.
It is symmetrically provided with a pair of of through-hole on the top of electroplating bath, is connected on the top of two parallel posts of vertical shear screen
It is connected to overhanging bar, the outer end for overhanging bar overhangs the outside for arriving electroplating bath after through-hole, on the front and rear sides face of electroplating bath
It is provided with electronic control cylinder, the output shaft of electronic control cylinder stretched out upwards is together with the outer end apical grafting of overhanging bar.
Vertical shear screen of the invention does and vertically moves under the drive of coating bath two sides electric cylinder, to realize
Shearing of the shearing screen to power line between anode and cathode, reduces the defect that crystal round fringes thickness of coating sharply increases, improves plating
The uniformity of layer.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the structural schematic diagram of vertical shear screen 8 of the invention.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing:
A kind of wafer copper-plating technique slot reducing coating edge effect, including coating bath 1, are provided with copper plating bath 2 in coating bath 1,
It is respectively arranged with cathode rod 3 and anode rod 6 in coating bath 1, is furnished with titanium indigo plant anode 7 on anode rod 6, is equipped on cathode rod 3
Wafer jig 4, wafer 5 be arranged on wafer jig 4, wafer 5 and titanium indigo plant anode 7 are arranged in copper plating bath 2, wafer 5 with
Vertical shear screen 8, the line between central point on the central point on wafer 5 and titanium indigo plant anode 7 are provided between titanium indigo plant anode 7
It is arranged in a mutually vertical manner with 8 place plane of vertical shear screen, vertical shear screen 8 is barrier shape, the two of vertical shear screen 8
L shape shear plate 10 has been equally spaced between parallel posts 9；The design of shearing screen structure, improves solution flowing well
Direction improves solution polarizability, while having redistributed the distribution of Cathode power line, improves the uniformity of coating.
The ratio of the diameter of the length and wafer 5 of L shape shear plate 10 is 1.5:1, and the spacing of two adjacent L shape shear plates 10 is
30 millimeters, the height of L shape shear plate 10 is 8 millimeters, and L shape shear plate 10 is 20 millimeters at a distance from wafer 5, L shape shear plate 10
With at a distance from titanium indigo plant anode 7 be 150 millimeters.
It is symmetrically provided with a pair of of through-hole 11 on the top of electroplating bath 1, on the top of two parallel posts 9 of vertical shear screen 8
End is respectively connected with overhanging bar 12, and the outer end of overhanging bar 12 overhangs the outside for arriving electroplating bath 1 after passing through through-hole 11, in electroplating bath 1
Electronic control cylinder 13 is provided on the face of front and rear sides, the output shaft of electronic control cylinder 13 stretched out upwards and the outer end of overhanging bar 12 are pushed up
It is connected together.
Claims (3)
1. one kind can reduce the wafer copper-plating technique slot of coating edge effect, including coating bath (1), plating is provided in coating bath (1)
Copper liquid (2) is respectively arranged with cathode rod (3) and anode rod (6) in coating bath (1), is furnished with titanium indigo plant anode on anode rod (6)
(7), wafer jig (4) are housed on cathode rod (3), wafer (5) is arranged on wafer jig (4), wafer (5) and titanium indigo plant anode
(7) it is arranged in copper plating bath (2), which is characterized in that be provided with vertical shear screen between wafer (5) and titanium indigo plant anode (7)
(8), the line between the central point on the central point and titanium indigo plant anode (7) on wafer (5) and vertical shear screen (8) place plane
It is arranged in a mutually vertical manner, vertical shear screen (8) is barrier shape, between two parallel posts (9) of vertical shear screen (8) etc.
It has been positioned apart from L shape shear plate (10).
2. the wafer copper-plating technique slot that one kind according to claim 1 can weaken coating edge effect, which is characterized in that L
The ratio of the diameter of the length and wafer (5) of shape shear plate (10) is 1.5:1, and the spacing of two adjacent L shape shear plates (10) is 30
Millimeter, the height of L shape shear plate (10) are 8 millimeters, and L shape shear plate (10) is 20 millimeters at a distance from wafer (5), the shearing of L shape
Plate (10) is 150 millimeters at a distance from titanium indigo plant anode (7).
3. one kind according to claim 1 or 2 can weaken the wafer copper-plating technique slot of coating edge effect, feature exists
In on the top of electroplating bath (1) a pair of of through-hole (11) being symmetrically provided with, in two parallel posts (9) of vertical shear screen (8)
Top is respectively connected with overhanging bar (12), and the outer end of overhanging bar (12) passes through through-hole (11) and overhangs the outside for arriving electroplating bath (1) afterwards,
Be provided on the front and rear sides face of electroplating bath (1) electronic control cylinder (13), the output shaft of electronic control cylinder (13) stretched out upwards with
Overhang the outer end apical grafting of bar (12) together.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614235.4A CN109518245A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique slot of coating edge effect can be weakened |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614235.4A CN109518245A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique slot of coating edge effect can be weakened |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109518245A true CN109518245A (en) | 2019-03-26 |
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ID=65797243
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811614235.4A Pending CN109518245A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique slot of coating edge effect can be weakened |
Country Status (1)
| Country | Link |
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| CN (1) | CN109518245A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2504282Y (en) * | 2001-10-25 | 2002-08-07 | 王敬伦 | Palte plating appts. |
| CN101376996A (en) * | 2008-09-25 | 2009-03-04 | 上海交通大学 | Micro-electroforming apparatus |
| CN202509147U (en) * | 2011-12-21 | 2012-10-31 | 宁波德洲精密电子有限公司 | Electroplating bath |
| CN108149293A (en) * | 2016-12-05 | 2018-06-12 | 苏州能讯高能半导体有限公司 | Semiconductor crystal wafer electro-deposition method and semiconductor crystal wafer electric deposition device |
-
2018
- 2018-12-27 CN CN201811614235.4A patent/CN109518245A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2504282Y (en) * | 2001-10-25 | 2002-08-07 | 王敬伦 | Palte plating appts. |
| CN101376996A (en) * | 2008-09-25 | 2009-03-04 | 上海交通大学 | Micro-electroforming apparatus |
| CN202509147U (en) * | 2011-12-21 | 2012-10-31 | 宁波德洲精密电子有限公司 | Electroplating bath |
| CN108149293A (en) * | 2016-12-05 | 2018-06-12 | 苏州能讯高能半导体有限公司 | Semiconductor crystal wafer electro-deposition method and semiconductor crystal wafer electric deposition device |
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Application publication date: 20190326 |