CN109518244A - The wafer copper-plating technique of coating edge effect can be weakened - Google Patents
The wafer copper-plating technique of coating edge effect can be weakened Download PDFInfo
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- CN109518244A CN109518244A CN201811614234.XA CN201811614234A CN109518244A CN 109518244 A CN109518244 A CN 109518244A CN 201811614234 A CN201811614234 A CN 201811614234A CN 109518244 A CN109518244 A CN 109518244A
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- vertical shear
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/02—Tanks; Installations therefor
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/10—Electrodes, e.g. composition, counter electrode
- C25D17/12—Shape or form
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
The invention discloses the wafer copper-plating techniques that one kind can weaken coating edge effect, solve the problems, such as that marginal position thickness of coating sharply increases wafer in the plating process.Copper plating bath (2) are set in coating bath (1), wafer (5) and titanium indigo plant anode (7) are arranged in copper plating bath (2)；It makes vertical shear screen (8), vertical shear screen (8) are set between wafer (5) and titanium indigo plant anode (7), energization starts as wafer copper facing, control electronic control cylinder (13) simultaneously, with 60 beats/min of frequency, vibrate up and down vertical shear screen (8), the Oscillation Amplitude of vertical shear screen (8) is 40 millimeters；After completing to wafer (5) copper facing, stop the up-down vibration of vertical shear screen (8).Reduce the defect that crystal round fringes thickness of coating sharply increases, improves the uniformity of coating.
Description
Technical field
The present invention relates to a kind of wafer copper-plating technique, in particular to a kind of plated wafer coppersmith that can reduce coating edge effect
Skill.
Background technique
Wafer electroplating device is mainly used in wafer copper post in integrated circuit Advanced Packaging, salient point, figure, TSV copper filling
The application of equal plating.Currently, just becoming the new technology that industry is concerned with the Advanced Packaging that 3D is encapsulated as representing, especially
It is to be electroplated wherein using particularly important.Wafer copper-plating technique slot in wafer electroplating device is used for 8 cun and following plated wafer
Process for copper realizes that copper post, figure etc. make on planar graph, and thickness of coating reaches 100 microns, and the uniformity of thickness of coating is wanted
≤±10%；But in the plating process, the radial distribution of power line, it is uneven to will lead to cathode current distribution, causes wafer side
Edge position thickness of coating sharply increases, and forms " edge effect " common in electroplating technology, how to improve the distribution of power line,
The polarizability for improving solution, keeps coating more uniform, is problem in urgent need to solve.
Summary of the invention
The present invention provides the wafer copper-plating techniques that one kind can weaken coating edge effect, solve wafer in electroplating process
The technical issues of middle marginal position thickness of coating sharply increases.The present invention is to solve the above technical problem by the following technical programs
:
A kind of wafer copper-plating technique reducing coating edge effect, comprising the following steps:
Copper plating bath is arranged in the first step in coating bath, and cathode rod and anode rod are arranged on coating bath, hangs oneself in anode rod and connects the blue sun of titanium
Wafer jig is arranged in pole on cathode rod, and by wafer on wafer jig, wafer and titanium indigo plant anode are arranged in copper plating bath
In；
Second step, production vertical shear screen: L shape shear plate, L shape are equally spaced located in parallel to one another between two parallel posts
The ratio of the length of shear plate and brilliant diameter of a circle is 1.5:1, and the spacing of two adjacent L shape shear plates is 32 millimeters, L shape shear plate
Height be 8 millimeters；
Vertical shear screen, the central point of wafer and the central point of titanium indigo plant anode is arranged in third step between wafer and titanium indigo plant anode
Between line to be arranged in a mutually vertical manner with plane where vertical shear screen, L shape shear plate is 60 millimeters at a distance from wafer, L
Shape shear plate is 155 millimeters at a distance from titanium indigo plant anode.
4th step is symmetrically arranged a pair of of through-hole on the top of coating bath, on the top of two parallel posts of vertical shear screen
It is respectively connected with overhanging bar, the outer end for overhanging bar overhangs the outside for arriving electroplating bath after through-hole, in the front and rear sides face of electroplating bath
On be respectively provided with electronic control cylinder, the output shaft of electronic control cylinder stretched out upwards is together with the outer end apical grafting of overhanging bar；
5th step, energization start as wafer copper facing, while controlling electronic control cylinder, with 60 beats/min of frequency, make vertical shear screen
It vibrates up and down, the Oscillation Amplitude of vertical shear screen is 40 millimeters；
6th step, when complete to wafer copper facing after, stop vertical shear screen up-down vibration.
A kind of wafer copper-plating technique slot reducing coating edge effect, including coating bath, are provided with copper plating bath in coating bath,
It is respectively arranged with cathode rod and anode rod in coating bath, is furnished with titanium indigo plant anode on anode rod, wafer clamp is housed on cathode rod
Tool, wafer are arranged on wafer jig, and wafer and titanium indigo plant anode are arranged in copper plating bath, are set between wafer and titanium indigo plant anode
It is equipped with vertical shear screen, it is flat where the line and vertical shear screen between central point on the central point on wafer and titanium indigo plant anode
Face is arranged in a mutually vertical manner, and vertical shear screen is barrier shape, between two parallel posts of vertical shear screen equally spaced
It is provided with L shape shear plate.
The ratio of the length of L shape shear plate and brilliant diameter of a circle is 1.5:1, and the spacing of two adjacent L shape shear plates is 30 millis
Rice, the height of L shape shear plate are 8 millimeters, and L shape shear plate is 20 millimeters at a distance from wafer, L shape shear plate and titanium indigo plant anode
Distance is 150 millimeters.It is symmetrically provided with a pair of of through-hole on the top of electroplating bath, on the top of two parallel posts of vertical shear screen
End is respectively connected with overhanging bar, and the outer end for overhanging bar overhangs the outside for arriving electroplating bath after through-hole, in the front and rear sides of electroplating bath
Electronic control cylinder is provided on face, the output shaft of electronic control cylinder stretched out upwards is together with the outer end apical grafting of overhanging bar.
Vertical shear screen of the invention does and vertically moves under the drive of coating bath two sides electric cylinder, to realize
Shearing of the shearing screen to power line between anode and cathode, reduces the defect that crystal round fringes thickness of coating sharply increases, improves plating
The uniformity of layer.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention；
Fig. 2 is the structural schematic diagram of vertical shear screen 8 of the invention.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing:
A kind of wafer copper-plating technique reducing coating edge effect, comprising the following steps:
Copper plating bath 2 is arranged in the first step in coating bath 1, and cathode rod 3 and anode rod 6 are arranged on coating bath 1, hangs oneself and connects in anode rod 6
Wafer jig 4 is arranged in titanium indigo plant anode 7 on cathode rod 3, by wafer 5 on wafer jig 4, by wafer 5 and titanium indigo plant anode 7
It is arranged in copper plating bath 2；
Second step, production vertical shear screen 8: L shape shear plate is equally spaced located in parallel to one another between two parallel posts 9
The ratio of the diameter of the length and wafer 5 of 10, L shape shear plates 10 is 1.5:1, and the spacing of two adjacent L shape shear plates 10 is 32 millis
Rice, the height of L shape shear plate 10 are 8 millimeters；
Third step is arranged vertical shear screen 8 between wafer 5 and titanium indigo plant anode 7, in the central point of wafer 5 and titanium indigo plant anode 7
Line between heart point will be arranged in a mutually vertical manner with 8 place plane of vertical shear screen, and L shape shear plate 10 is at a distance from wafer 5
60 millimeters, L shape shear plate 10 is 155 millimeters at a distance from titanium indigo plant anode 7.
4th step is symmetrically arranged a pair of of through-hole 11 on the top of coating bath 1, in two parallel posts 9 of vertical shear screen 8
Top is respectively connected with overhanging bar 12, and overhanging is to the outside of electroplating bath 1 after the outer end of overhanging bar 12 passes through through-hole 11, in electroplating bath 1
Front and rear sides face on be respectively provided with electronic control cylinder 13, the output shaft of electronic control cylinder 13 stretched out upwards and the outer end of overhanging bar 12 are pushed up
It is connected together；
5th step, energization start as wafer copper facing, while controlling electronic control cylinder 13, with 60 beats/min of frequency, make vertical shear
Screen 8 vibrates up and down, and the Oscillation Amplitude of vertical shear screen 8 is 40 millimeters；
6th step, when complete to 5 copper facing of wafer after, stop vertical shear screen 8 up-down vibration.
A kind of wafer copper-plating technique slot reducing coating edge effect, including coating bath 1, are provided with copper facing in coating bath 1
Liquid 2 is respectively arranged with cathode rod 3 and anode rod 6 in coating bath 1, is furnished with titanium indigo plant anode 7 on anode rod 6, on cathode rod 3
Equipped with wafer jig 4, wafer 5 is arranged on wafer jig 4, and wafer 5 and titanium indigo plant anode 7 are arranged in copper plating bath 2, in wafer
Vertical shear screen 8 is provided between 5 and titanium indigo plant anode 7, between the central point on the central point on wafer 5 and titanium indigo plant anode 7
Line and 8 place plane of vertical shear screen are arranged in a mutually vertical manner, and vertical shear screen 8 is barrier shape, in vertical shear screen 8
Two parallel posts 9 between be equally spaced L shape shear plate 10；The design of shearing screen structure, improves solution well
Flow direction improves solution polarizability, while having redistributed the distribution of Cathode power line, improves the uniformity of coating.
The ratio of the diameter of the length and wafer 5 of L shape shear plate 10 is 1.5:1, and the spacing of two adjacent L shape shear plates 10 is
30 millimeters, the height of L shape shear plate 10 is 8 millimeters, and L shape shear plate 10 is 20 millimeters at a distance from wafer 5, L shape shear plate 10
With at a distance from titanium indigo plant anode 7 be 150 millimeters.
It is symmetrically provided with a pair of of through-hole 11 on the top of electroplating bath 1, on the top of two parallel posts 9 of vertical shear screen 8
End is respectively connected with overhanging bar 12, and the outer end of overhanging bar 12 overhangs the outside for arriving electroplating bath 1 after passing through through-hole 11, in electroplating bath 1
Electronic control cylinder 13 is provided on the face of front and rear sides, the output shaft of electronic control cylinder 13 stretched out upwards and the outer end of overhanging bar 12 are pushed up
It is connected together.
Claims (1)
1. the wafer copper-plating technique that one kind can reduce coating edge effect, comprising the following steps:
Copper plating bath (2) are arranged in coating bath (1) in the first step, cathode rod (3) and anode rod (6) are arranged on coating bath (1), in sun
Pole bar (6), which is hung oneself, connects titanium indigo plant anode (7), and wafer jig (4) are arranged on cathode rod (3), and wafer (5) are mounted in wafer jig
(4) on, wafer (5) and titanium indigo plant anode (7) are arranged in copper plating bath (2)；
Second step, production vertical shear screen (8): the shearing of L shape is equally spaced located in parallel to one another between two parallel posts (9)
Plate (10), the ratio of the diameter of the length and wafer (5) of L shape shear plate (10) are 1.5:1, two adjacent L shape shear plates (10)
Spacing is 32 millimeters, and the height of L shape shear plate (10) is 8 millimeters；
Vertical shear screen (8) are arranged between wafer (5) and titanium indigo plant anode (7) in third step, and the central point and titanium of wafer (5) are blue
Line between the central point of anode (7) will be arranged in a mutually vertical manner with plane where vertical shear screen (8), L shape shear plate (10)
With at a distance from wafer (5) be 60 millimeters, L shape shear plate (10) with titanium indigo plant anode (7) at a distance from be 155 millimeters；
4th step is symmetrically arranged a pair of of through-hole (11) on the top of coating bath (1), in two parallel posts of vertical shear screen (8)
(9) top is respectively connected with overhanging bar (12), and the outer end of overhanging bar (12) passes through through-hole (11), and the outer of electroplating bath (1) is arrived in overhanging afterwards
Side is respectively provided with electronic control cylinder (13) on the front and rear sides face of electroplating bath (1), the output shaft of electronic control cylinder (13) stretched out upwards
Together with the outer end apical grafting of overhanging bar (12)；
5th step, energization start as wafer copper facing, while controlling electronic control cylinder (13), with 60 beats/min of frequency, make vertically to cut
Tangent screen (8) vibrates up and down, and the Oscillation Amplitude of vertical shear screen (8) is 40 millimeters；
6th step, when complete to wafer (5) copper facing after, stop vertical shear screen (8) up-down vibration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614234.XA CN109518244A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique of coating edge effect can be weakened |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811614234.XA CN109518244A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique of coating edge effect can be weakened |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109518244A true CN109518244A (en) | 2019-03-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811614234.XA Pending CN109518244A (en) | 2018-12-27 | 2018-12-27 | The wafer copper-plating technique of coating edge effect can be weakened |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111334833A (en) * | 2020-04-27 | 2020-06-26 | 侯光微 | Method and system for synchronously electroplating and filling differentiated holes |
| CN111501082A (en) * | 2020-06-04 | 2020-08-07 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
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| CN1668785A (en) * | 2002-07-12 | 2005-09-14 | 埃托特克德国有限公司 | Device and method for monitoring an electrolytic process |
| CN101376996A (en) * | 2008-09-25 | 2009-03-04 | 上海交通大学 | Micro-electroforming apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111334833A (en) * | 2020-04-27 | 2020-06-26 | 侯光微 | Method and system for synchronously electroplating and filling differentiated holes |
| CN111501082A (en) * | 2020-06-04 | 2020-08-07 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
| CN111501082B (en) * | 2020-06-04 | 2022-03-29 | 厦门通富微电子有限公司 | Electroplating electrode protection device, electroplating system and semiconductor processing equipment |
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Application publication date: 20190326 |
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