CN107955958A - The metal plating device of wafer - Google Patents
The metal plating device of wafer Download PDFInfo
- Publication number
- CN107955958A CN107955958A CN201711146018.2A CN201711146018A CN107955958A CN 107955958 A CN107955958 A CN 107955958A CN 201711146018 A CN201711146018 A CN 201711146018A CN 107955958 A CN107955958 A CN 107955958A
- Authority
- CN
- China
- Prior art keywords
- wafer
- high resistance
- virtual anodes
- central area
- metal plating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67138—Apparatus for wiring semiconductor or solid state device
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A kind of metal plating device of wafer, including：Electroplating container, the electroplating container are used to accommodate electroplate liquid；Wafer susceptor, the wafer susceptor are arranged at the first side of the electroplating container, and the wafer susceptor is used to fixing the surface of wafer towards inside the electroplating container；Anode electrode, the anode electrode are located at the second side of the electroplating container, and first side and the second side are oppositely arranged；High resistance virtual anodes, in the electroplating container and between the anode electrode and the wafer susceptor, wherein, unit area resistance value of the high resistance virtual anodes in central area is less than the unit area resistance value of edge region.The present invention program can improve the uniformity for the metallic film that plating is formed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, to a kind of metal plating device of wafer.
Background technology
In semiconductor fabrication process, wafer can be electrically connected to by conductive lead wire, using electroplating technology deposited metal
The metal wire in metal layer (also known as metallic film) is formed on to wafer in patterned groove, such as forms copper metal line
(also known as copper metal conducting wire), or silver metal line (also known as silver metal conducting wire).
A kind of existing metal plating device can include being used for the electroplating container for accommodating electroplate liquid, connect the negative of external power
Pole and place wafer wafer susceptor, connect external power cathode anode electrode.Specifically, using external power to the sun
Pole electrode applies voltage, and the anode electrode occurs oxidation reaction and forms metal ion (such as copper ion, silver ion etc.), described
Metal ion, which is reduced into metallic atom on the surface of wafer and deposits, forms metal layer.
Due to positive related in the speed of crystal column surface deposited metal layer and the size of current density, and easily occur eventually
End effect (Terminal Effect).In the prior art, there is one kind and use high resistance virtual anodes (High
Resistance Virtual Anode, HRVA) reduce end effect scheme, wherein, the high resistance virtual anodes again may be used
To be known as fluid diffuser plate.
However, in the prior art, however it remains a degree of end effect, the uniformity of metallic film are still needed into one
Step improves.
The content of the invention
The technical problem to be solved by the present invention is to provide a kind of metal plating device of wafer, can improve the gold that plating is formed
Belong to the uniformity of film.
In order to solve the above technical problems, the embodiment of the present invention provides a kind of metal plating device of wafer, including：Plating is held
Device, the electroplating container are used to accommodate electroplate liquid；Wafer susceptor, the wafer susceptor are arranged at the first of the electroplating container
Side, the wafer susceptor are used to fixing the surface of wafer towards inside the electroplating container；Anode electrode, the anode electrode position
In the second side of the electroplating container, first side and the second side are oppositely arranged；High resistance virtual anodes, positioned at the plating
In container and between the anode electrode and the wafer susceptor, wherein, the high resistance virtual anodes are in central area
Unit area resistance value be less than edge region unit area resistance value.
Optionally, the metal plating device of the wafer further includes：Cationic membrane, the cationic membrane are located at the wafer
Between pedestal and the anode electrode.
Optionally, thickness of the high resistance virtual anodes in central area is less than the thickness of edge region.
Optionally, the thickness of the high resistance virtual anodes is gradually reduced from outer most edge to center.
Optionally, exist compared to the thickness of the high resistance virtual anodes edge region, the high resistance virtual anodes
The percentage that the thickness of central area reduces is 0.1% to 20%.
Optionally, the high resistance virtual anodes have the hole of multiple break-through, and the high resistance virtual anodes are at center
The aperture of the hole in region is more than the aperture of the hole of edge region.
Optionally, the aperture of the hole of the high resistance virtual anodes gradually increases from outer most edge to center.
Optionally, compared to the fringe region hole aperture, the aperture of the hole of the central area is increased
Percentage is 0.1% to 20%.
Optionally, the central area of the high resistance virtual anodes and fringe region are made from a different material, the center
The resistivity of the material in region is less than the resistivity of the material of fringe region.
Optionally, the metal plating device of the wafer further includes：External power, the external power are located at the electroplating container
Outside, and the cathode of the external power is electrically connected with the anode electrode, and the anode of the external power is electrically connected with the wafer susceptor
Connect.
Compared with prior art, the technical solution of the embodiment of the present invention has the advantages that：
In embodiments of the present invention, there is provided a kind of metal plating device of wafer, including：Electroplating container, the plating are held
Device is used to accommodate electroplate liquid；Wafer susceptor, the wafer susceptor are arranged at the first side of the electroplating container, the wafer susceptor
For fixing the surface of wafer towards inside the electroplating container；Anode electrode, the anode electrode are located at the electroplating container
The second side, first side and the second side are oppositely arranged；High resistance virtual anodes, in the electroplating container and are located at institute
State between anode electrode and the wafer susceptor, wherein, unit area resistance value of the high resistance virtual anodes in central area
Less than the unit area resistance value of edge region.Using the above scheme, by metal plating device, setting high resistance virtual
Unit area resistance value of the anode in central area is less than the unit area resistance value of edge region, can cause in central area
The resistance of high resistance virtual anodes adds high resistance of the crystal round fringes to the sum of the resistance of crystal circle center close to fringe region virtual
The resistance of anode, so that current density of the current density of crystal circle center position close to crystal round fringes position, and then make
The deposition rate of metal of crystal circle center position helps to make crystal circle center position close to the deposition rate of metal of crystal round fringes position
The thickness for putting the thickness and the metal layer of crystal round fringes position of the metal layer that plating is formed reaches unanimity, and improves the gold that plating is formed
Belong to the uniformity of film.
Further, it is real by setting thickness of the high resistance virtual anodes in central area to be less than the thickness of edge region
Unit area resistance value of the existing high resistance virtual anodes in central area is less than the unit area resistance value of edge region.At this
In inventive embodiments, by reducing high resistance virtual anodes in the thickness of central area or increase high resistance virtual anodes on side
The thickness in edge region, can cause unit area resistance value of the high resistance virtual anodes in central area to be less than the list of edge region
Plane accumulates resistance value, helps to improve the uniformity for the metallic film that plating is formed.
Further, by setting high resistance virtual anodes to be more than the hole of edge region in the aperture of the hole of central area
The aperture in hole, realizes that unit area resistance value of the high resistance virtual anodes in central area is less than the unit plane of edge region
Product resistance value.In embodiments of the present invention, by increasing high resistance virtual anodes in the aperture of the hole of central area or reduction
The aperture of the hole of high resistance virtual anodes edge region, can cause high resistance virtual anodes in the unit plane of central area
Product resistance value is less than the unit area resistance value of edge region, helps to improve the uniformity for the metallic film that plating is formed.
Further, the central area of the high resistance virtual anodes and fringe region are made from a different material, the center
The resistivity of the material in region is less than the resistivity of the material of fringe region.In embodiments of the present invention, by central area
Using the material of low-resistivity, edge region uses the material of high resistivity, high resistance virtual anodes can be caused at center
The unit area resistance value in region is less than the unit area resistance value of edge region, helps to improve the metallic film that plating is formed
Uniformity.
Brief description of the drawings
Fig. 1 is a kind of operative scenario schematic diagram of the metal plating device of wafer in the prior art；
Fig. 2 is a kind of top view of high resistance virtual anodes in the prior art；
Fig. 3 is a kind of sectional view of high resistance virtual anodes in the prior art；
Fig. 4 is a kind of operative scenario schematic diagram of the metal plating device of wafer in the embodiment of the present invention；
Fig. 5 is a kind of sectional view of high resistance virtual anodes in the embodiment of the present invention；
Fig. 6 is the sectional view of another high resistance virtual anodes in the embodiment of the present invention.
Embodiment
In the prior art, there are a degree of end effect, the uniformity of metallic film to need further to improve.
With reference to Fig. 1, Fig. 1 is a kind of operative scenario schematic diagram of the metal plating device of wafer in the prior art.The gold
Electroplating container 100, wafer susceptor 102, anode electrode 104 and high resistance virtual anodes 110 can be included by belonging to electroplanting device.
Wherein, the electroplating container 100 can be used for accommodating electroplate liquid.
Specifically, the electroplate liquid can make choice according to the species for intending plating metal, such as be when intending plating metal
During copper, electroplate liquid can include copper-bath；When it is silver to intend plating metal, electroplate liquid can include silver sulfate solution.
The wafer susceptor 102 can be arranged at the first side of the electroplating container 100, and the wafer susceptor 102 is used for
The surface of fixed wafer 108 is towards inside the electroplating container 100.
The anode electrode 104 can be located at the second side of the electroplating container 100, and first side and the second side are opposite
Set.
Specifically, the anode electrode 104 can make choice according to the species for intending plating metal, such as golden when intending plating
Belong to for copper when, anode electrode 104 can be copper electrode；When it is silver to intend plating metal, anode electrode 104 can be silver electrode.
In specific implementation, voltage is applied to the anode electrode 104 by external power 106, the anode electrode 104 is sent out
Raw oxidation reaction forms metal ion (such as copper ion, silver ion etc.), wafer of the metal ion on wafer susceptor 102
108 surface, which is reduced into metallic atom and deposits, forms metal layer.
Wherein, the external power 106 can be located at outside the electroplating container 100, and the cathode of the external power 106 and institute
State anode electrode 104 to be electrically connected, the anode of the external power 106 is electrically connected with the wafer susceptor 102.
It is pointed out that it is positive related in the speed of 108 surface deposited metal layer of wafer and the size of current density, and
And end effect easily occurs.Specifically, it is determined that the resistance 121 of the central area electroplate liquid of electroplating container 100 and wafer 108
Edge the sum of to the resistance value of resistance 123 at the center of wafer 108, and with the resistance of the fringe region electroplate liquid of electroplating container 100
131 resistance value is compared, since resistance 121 and 131 resistance value of resistance are very close to, the resistance value of resistance 121 and resistance 123
The sum of be more than resistance 131 resistance value, namely wafer 108 center current density be less than wafer 108 marginal position electricity
Current density, so as to cause the deposition rate of metal of the center of wafer 108 less than the metal deposit of the marginal position of wafer 108
Speed, namely the center of wafer 108 metal layer thickness be less than wafer 108 marginal position metal layer thickness
Degree.
In order to reduce end effect, the high resistance virtual anodes 110 can be used.Wherein, the high resistance is virtually positive
Pole 110 can be located in the electroplating container 100 and between the anode electrode 104 and the wafer susceptor 102.
Specifically, since the resistance value of the resistance of high resistance virtual anodes 110 is higher than the resistance value of other resistance, can make
The metal layer of the center of wafer 108 and the thickness difference of the metal layer of the marginal position in wafer 108 decline.
More specifically, the resistance 125, resistance 121 and resistance of the central area of high resistance virtual anodes 110 are determined
The sum of 123 first resistance value, and hindered with the second of the resistance 135 of the central area of high resistance virtual anodes 110 and resistance 131
The sum of value is compared, and since resistance 125 is close with 135 resistance value of resistance, and is much larger than resistance 121, resistance 123 and electricity
Resistance 131, therefore the sum of first resistance value and the difference of the sum of the second resistance value reduce.Further, namely wafer 108 center
The difference of current density and the current density of the marginal position of wafer 108 is minimized, so that the center of wafer 108
The thickness difference of metal layer and the metal layer of the marginal position in wafer 108 declines.
With reference to being a kind of top view of high resistance virtual anodes in the prior art with reference to Fig. 2 and Fig. 3, Fig. 2；Fig. 3 is existing
A kind of sectional view of high resistance virtual anodes in technology.The high resistance virtual anodes 210 have the hole 211 of multiple break-through.
In a kind of embodiment of the embodiment of the present invention, described hole 211 is isolated from each other and not in high resistance
The passage of interconnection is formed in virtual anodes 210.
But in the prior art, even if using high resistance virtual anodes 210, however it remains a degree of terminal effect
Should, the uniformity of metallic film still needs to further improve.
The present inventor is by studying discovery, in the prior art, it is difficult to unconfined to improve the high resistance void
Intend the resistance value of anode, therefore the difference of the current density of the marginal position of the center current density of wafer and wafer is still deposited
, it is difficult to accurately reduce the thickness difference of metal layer.
In embodiments of the present invention, there is provided a kind of metal plating device of wafer, including：Electroplating container, the plating are held
Device is used to accommodate electroplate liquid；Wafer susceptor, the wafer susceptor are arranged at the first side of the electroplating container, the wafer susceptor
For fixing the surface of wafer towards inside the electroplating container；Anode electrode, the anode electrode are located at the electroplating container
The second side, first side and the second side are oppositely arranged；High resistance virtual anodes, in the electroplating container and are located at institute
State between anode electrode and the wafer susceptor, wherein, unit area resistance value of the high resistance virtual anodes in central area
Less than the unit area resistance value of edge region.Using the above scheme, by metal plating device, setting high resistance virtual
Unit area resistance value of the anode in central area is less than the unit area resistance value of edge region, can cause in central area
The resistance of high resistance virtual anodes adds high resistance of the crystal round fringes to the sum of the resistance of crystal circle center close to fringe region virtual
The resistance of anode, so that current density of the current density of crystal circle center position close to crystal round fringes position, and then make
The deposition rate of metal of crystal circle center position helps to make crystal circle center position close to the deposition rate of metal of crystal round fringes position
The consistency of thickness of the thickness for the metal layer that plating is formed and the metal layer of crystal round fringes position is put, improves the metal foil that plating is formed
The uniformity of film.
It is understandable to enable above-mentioned purpose, feature and the beneficial effect of the present invention to become apparent, below in conjunction with the accompanying drawings to this
The specific embodiment of invention is described in detail.
With reference to Fig. 4, Fig. 4 is a kind of operative scenario schematic diagram of the metal plating device of wafer in the embodiment of the present invention.
The metal plating device can include electroplating container 400, wafer susceptor 402, anode electrode 404 and high resistance
Virtual anodes 410.
Wherein, the electroplating container 400 can be used for accommodating electroplate liquid.
The wafer susceptor 402 can be arranged at the first side of the electroplating container 400, and the wafer susceptor 402 is used for
The surface of fixed wafer 408 is towards inside the electroplating container 400.
The anode electrode 404 can be located at the second side of the electroplating container 400, and first side and the second side are opposite
Set.In a nonrestrictive example, first side can be located at the top of electroplating container 400, and second side can
With positioned at the bottom of electroplating container 400.
The high resistance virtual anodes 410 can be located at the electroplating container 400 in and positioned at the anode electrode 404 with
Between the wafer susceptor 402, wherein, unit area resistance value of the high resistance virtual anodes 410 in central area is less than
The unit area resistance value of fringe region.
It is pointed out that thickness of the high resistance virtual anodes 410 in central area shown in Fig. 4 is less than edge region
Thickness, with realize high resistance virtual anodes 410 central area unit area resistance value be less than edge region unit plane
Product resistance value.But realize that unit area resistance value of the high resistance virtual anodes 410 in central area is less than the unit of edge region
The mode not limited to this of area resistance value.
It is possible to further apply voltage to the anode electrode 404 by external power 406, the external power 406 can be with
Outside the electroplating container 400, and the cathode of the external power 406 can be electrically connected with the anode electrode 404, described outer
The anode of power supply 406 can be electrically connected with the wafer susceptor 402.
Further, the metal plating device of the wafer can also include cationic membrane 409, the cationic membrane 409
Can be between the wafer susceptor 402 and the anode electrode 404.
In specific implementation, the cationic membrane 409 act as barrier wafer 408 and cationic membrane 409 between it is non-
Cation, avoids the non-cationic from being moved to 404 one end of anode electrode, or even is attached on anode electrode 404, influences metal
The oxidation reaction of ion.Wherein, the non-cationic for example can be the additive for making metal ion more be formed uniformly film
Ion.
Further, the cationic membrane 409 can be located at the high resistance virtual anodes 410 and the anode electrode
Between 404, so as to retain more spaces for non-cationic.
With reference to Fig. 5, Fig. 5 is a kind of sectional view of high resistance virtual anodes in the embodiment of the present invention.
Wherein, the high resistance virtual anodes 510 have the hole 511 of multiple break-through, and the aperture of each hole 511 is permitting
Perhaps equal in error range, thickness of the high resistance virtual anodes 510 in central area is less than the thickness of edge region.
In embodiments of the present invention, by setting thickness of the high resistance virtual anodes 510 in central area to be less than at edge
The thickness in region, it is possible to achieve unit area resistance value of the high resistance virtual anodes 510 in central area is less than in marginal zone
The unit area resistance value in domain.
Further, the thickness of the high resistance virtual anodes 510 could be provided as gradually reducing from outer most edge to center.
Specifically, the reduction mode gradually reduced from outer most edge to center can be uniformly to reduce, dropped in arc line shaped
Low or parabolically shape reduction.
Further, it is virtually positive compared to the thickness of 510 edge region of high resistance virtual anodes, the high resistance
The percentage that thickness of the pole 510 in central area reduces can be set according to specific manufacturing process, to be made by reducing thickness
The resistance reduction amount of high resistance virtual anodes 510 on a certain area close to the corresponding region of wafer 408 (with reference to Fig. 4) extremely
The resistance of crystal round fringes, namely by reducing resistance of the high resistance virtual anodes 510 in central area, to offset wafer 408
Resistance of the edge to the center of wafer 408.Wherein, when a certain region is located at the central area of high resistance virtual anodes 510
When, the resistance at the center of the edge of the wafer 408 to wafer 408 can be considered as the resistance 123 shown in Fig. 1.
As a nonrestrictive example, the percentage that the thickness reduces can be 0.1% to 20%.
In embodiments of the present invention, by reducing thickness of the high resistance virtual anodes 510 in central area, or increase height
The thickness of 510 edge region of resistor virtual anode, can cause high resistance virtual anodes 510 in the unit area of central area
Resistance value is less than the unit area resistance value of edge region, helps to improve the uniformity for the metallic film that plating is formed.
With reference to Fig. 6, Fig. 6 is the sectional view of another high resistance virtual anodes in the embodiment of the present invention.The high resistance is empty
Intending anode 610 has the hole 611 of multiple break-through, and the high resistance virtual anodes 610 are in the aperture of the hole 611 of central area
More than the aperture of the hole 611 of edge region.
In embodiments of the present invention, by setting high resistance virtual anodes 610 big in the aperture of the hole 611 of central area
In the aperture of the hole 611 of edge region, unit area resistance value of the high resistance virtual anodes 610 in central area is realized
Less than the unit area resistance value of edge region.
Further, the aperture of the hole of the high resistance virtual anodes 610 gradually increases from outer most edge to center.
It is specifically, described that from outer most edge to center, gradually increased increase mode can be uniformly increase or non-homogeneous increasing
Add.
Further, compared to the fringe region hole 611 aperture, the hole of the hole 611 of the central area
The increased percentage in footpath can be set according to specific manufacturing process, with by increasing aperture high resistance virtual anodes 610
Resistance of the resistance reduction amount on a certain area close to the corresponding region of wafer 408 (reference Fig. 4) to crystal round fringes, namely
By reducing resistance of the high resistance virtual anodes 610 in central area, to offset the edge of wafer 408 to the center of wafer 408
Resistance.Wherein, when a certain region is located at the central area of high resistance virtual anodes 610, the edge of the wafer 408
Resistance to the center of wafer 408 can be considered as the resistance 123 shown in Fig. 1.
As a nonrestrictive example, the increased percentage in aperture can be 0.1% to 20%.
In embodiments of the present invention, by increasing high resistance virtual anodes 610 in the aperture of the hole 611 of central area,
Or reduce the aperture of the hole 611 of 610 edge region of high resistance virtual anodes, it can cause high resistance virtual anodes 610
Unit area resistance value in central area is less than the unit area resistance value of edge region, helps to improve the metal that plating is formed
The uniformity of film.
In another embodiment of the embodiment of the present invention, the central area and side of the high resistance virtual anodes
Edge region can be made from a different material, and the resistivity of the material of the central area can be less than the electricity of the material of fringe region
Resistance rate.
Preferably, the high resistance virtual anodes can be made by the way of multiple material splicing, so that high resistance
The resistivity of the unit area of virtual anodes is gradually reduced from outer most edge to center, such as including uniformly reducing or non-homogeneous subtracting
It is small.
Specifically, the material of the high resistance virtual anodes can be selected from the material with acidresistant property, described anti-
The material of acid corrosion performance can for example include polyethylene, polypropylene, Kynoar (PVDF), polytetrafluoroethylene (PTFE) and gather
Sulfone.
In embodiments of the present invention, by using the material of high resistivity in central area, edge region uses low electricity
The material of resistance rate, can cause unit area resistance value of the high resistance virtual anodes in central area to be less than the unit of edge region
Area resistance value, helps to improve the uniformity for the metallic film that plating is formed.
It is pointed out that three kinds of embodiments of the embodiments of the present invention can be used in combination.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, are not departing from this
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Subject to the scope of restriction.
Claims (10)
- A kind of 1. metal plating device of wafer, it is characterised in that including：Electroplating container, the electroplating container are used to accommodate electroplate liquid；Wafer susceptor, the wafer susceptor are arranged at the first side of the electroplating container, and the wafer susceptor is used to fix wafer Surface towards inside the electroplating container；Anode electrode, the anode electrode are located at the second side of the electroplating container, and first side and the second side are oppositely arranged；High resistance virtual anodes, in the electroplating container and between the anode electrode and the wafer susceptor, its In, unit area resistance value of the high resistance virtual anodes in central area is less than the unit area resistance value of edge region.
- 2. the metal plating device of wafer according to claim 1, it is characterised in that further include：Cationic membrane, the cationic membrane is between the wafer susceptor and the anode electrode.
- 3. the metal plating device of wafer according to claim 1, it is characterised in thatThickness of the high resistance virtual anodes in central area is less than the thickness of edge region.
- 4. the metal plating device of wafer according to claim 3, it is characterised in that the thickness of the high resistance virtual anodes Degree is gradually reduced from outer most edge to center.
- 5. the metal plating device of wafer according to claim 3, it is characterised in thatCompared to the thickness of the high resistance virtual anodes edge region, thickness of the high resistance virtual anodes in central area The percentage that degree reduces is 0.1% to 20%.
- 6. the metal plating device of wafer according to claim 1, the high resistance virtual anodes have multiple break-through Hole, it is characterised in thatThe aperture of hole of the high resistance virtual anodes in central area is more than the aperture of the hole of edge region.
- 7. the metal plating device of wafer according to claim 6, it is characterised in that the hole of the high resistance virtual anodes The aperture in hole gradually increases from outer most edge to center.
- 8. the metal plating device of wafer according to claim 6, it is characterised in thatCompared to the aperture of the hole of the fringe region, the increased percentage in aperture of the hole of the central area is 0.1% to 20%.
- 9. the metal plating device of wafer according to claim 1, it is characterised in thatThe central area of the high resistance virtual anodes and fringe region are made from a different material, the material of the central area Resistivity is less than the resistivity of the material of fringe region.
- 10. according to the metal plating device of claim 1 to 9 any one of them wafer, it is characterised in that further include：Dispatch from foreign news agency Source, the external power is located at outside the electroplating container, and the cathode of the external power is electrically connected with the anode electrode, described outer The anode of power supply is electrically connected with the wafer susceptor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711146018.2A CN107955958A (en) | 2017-11-17 | 2017-11-17 | The metal plating device of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711146018.2A CN107955958A (en) | 2017-11-17 | 2017-11-17 | The metal plating device of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107955958A true CN107955958A (en) | 2018-04-24 |
Family
ID=61963805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711146018.2A Pending CN107955958A (en) | 2017-11-17 | 2017-11-17 | The metal plating device of wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107955958A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109518244A (en) * | 2018-12-27 | 2019-03-26 | 中国电子科技集团公司第二研究所 | The wafer copper-plating technique of coating edge effect can be weakened |
| CN112831821A (en) * | 2021-01-04 | 2021-05-25 | 长江存储科技有限责任公司 | Wafer electroplating device and electroplating method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736376A (en) * | 2008-11-07 | 2010-06-16 | 诺发系统有限公司 | Method and apparatus for electroplating |
| CN106149024A (en) * | 2015-05-14 | 2016-11-23 | 朗姆研究公司 | Utilize the resistive ion of ion can the apparatus and method of piercing elements plated metal |
| CN106811791A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method of high resistance virtual anodes, electroplating bath and treatment substrate surface for electroplating bath |
-
2017
- 2017-11-17 CN CN201711146018.2A patent/CN107955958A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101736376A (en) * | 2008-11-07 | 2010-06-16 | 诺发系统有限公司 | Method and apparatus for electroplating |
| CN106149024A (en) * | 2015-05-14 | 2016-11-23 | 朗姆研究公司 | Utilize the resistive ion of ion can the apparatus and method of piercing elements plated metal |
| CN106811791A (en) * | 2015-11-30 | 2017-06-09 | 台湾积体电路制造股份有限公司 | The method of high resistance virtual anodes, electroplating bath and treatment substrate surface for electroplating bath |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109518244A (en) * | 2018-12-27 | 2019-03-26 | 中国电子科技集团公司第二研究所 | The wafer copper-plating technique of coating edge effect can be weakened |
| CN112831821A (en) * | 2021-01-04 | 2021-05-25 | 长江存储科技有限责任公司 | Wafer electroplating device and electroplating method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| RU2615009C1 (en) | Device for application of metal film and method of application of metal film | |
| US8926820B2 (en) | Working electrode design for electrochemical processing of electronic components | |
| KR20040005866A (en) | Method and apparatus for controlling thickness uniformity of electroplated layer | |
| US9708724B2 (en) | Anode unit and plating apparatus having such anode unit | |
| JP6304681B2 (en) | Metal film and method for forming metal film | |
| CN107012495A (en) | Plating cup with cup bottom profile | |
| US20100181670A1 (en) | Contact structure for a semiconductor and method for producing the same | |
| JP3255145B2 (en) | Plating equipment | |
| CN109753676A (en) | Plating analytic method, plating resolution system and the computer readable storage medium for plating parsing | |
| CN107955958A (en) | The metal plating device of wafer | |
| CN103343380B (en) | Anode assembly for electroplating and electroplanting device | |
| CN102373497B (en) | Electroplating apparatus and electroplating method thereof | |
| CN102560612B (en) | Anode assembly for electroplating and electroplating device | |
| Palli et al. | Theoretical and experimental study of copper electrodeposition in a modified hull cell | |
| CN108103534A (en) | A kind of preparation method of metal grill film | |
| CN109087902B (en) | Wiring structure, manufacturing method thereof and display device | |
| CN100577890C (en) | Method for improving uniformity of electrochemical plating films | |
| CN202509152U (en) | Anode subassembly for electroplating and electroplating device | |
| CN207828440U (en) | Electroplating system | |
| CN112831821A (en) | Wafer electroplating device and electroplating method | |
| CN109518260A (en) | Accessory plate and the electroplating system using it is electroplated | |
| RU2699216C1 (en) | Device for application of electroplating coatings | |
| TWI664321B (en) | Eletroplating auxiliary plate and electroplating system provided with same | |
| KR20100050970A (en) | Electro plating equipment and method of electro plating using the same | |
| TWM555362U (en) | Plating auxiliary board and plating system using the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180424 |
|
| RJ01 | Rejection of invention patent application after publication |